EP4476758C0 - Symmetrischer prozessreaktor - Google Patents

Symmetrischer prozessreaktor

Info

Publication number
EP4476758C0
EP4476758C0 EP23703683.5A EP23703683A EP4476758C0 EP 4476758 C0 EP4476758 C0 EP 4476758C0 EP 23703683 A EP23703683 A EP 23703683A EP 4476758 C0 EP4476758 C0 EP 4476758C0
Authority
EP
European Patent Office
Prior art keywords
process reactor
symmetric process
symmetric
reactor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
EP23703683.5A
Other languages
English (en)
French (fr)
Other versions
EP4476758A1 (de
EP4476758B1 (de
Inventor
Stephan Wege
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of EP4476758A1 publication Critical patent/EP4476758A1/de
Application granted granted Critical
Publication of EP4476758C0 publication Critical patent/EP4476758C0/de
Publication of EP4476758B1 publication Critical patent/EP4476758B1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32743—Means for moving the material to be treated for introducing the material into processing chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
EP23703683.5A 2022-02-07 2023-01-27 Symmetrischer prozessreaktor Active EP4476758B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102022102768.6A DE102022102768A1 (de) 2022-02-07 2022-02-07 Symmetrischer Prozessreaktor
PCT/DE2023/100062 WO2023147814A1 (de) 2022-02-07 2023-01-27 Symmetrischer prozessreaktor

Publications (3)

Publication Number Publication Date
EP4476758A1 EP4476758A1 (de) 2024-12-18
EP4476758C0 true EP4476758C0 (de) 2025-08-13
EP4476758B1 EP4476758B1 (de) 2025-08-13

Family

ID=85199254

Family Applications (1)

Application Number Title Priority Date Filing Date
EP23703683.5A Active EP4476758B1 (de) 2022-02-07 2023-01-27 Symmetrischer prozessreaktor

Country Status (5)

Country Link
US (1) US20250157792A1 (de)
EP (1) EP4476758B1 (de)
KR (1) KR20240144235A (de)
DE (1) DE102022102768A1 (de)
WO (1) WO2023147814A1 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112024001313A5 (de) 2023-03-17 2026-01-08 Stephan Wege Prozessreaktor und vefahren für die herstellung von strukturen auf einem substrat

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2653633B1 (fr) * 1989-10-19 1991-12-20 Commissariat Energie Atomique Dispositif de traitement chimique assiste par un plasma de diffusion.
EP0849766A3 (de) 1992-01-24 1998-10-14 Applied Materials, Inc. Ätzverfahren
TW283250B (en) * 1995-07-10 1996-08-11 Watkins Johnson Co Plasma enhanced chemical processing reactor and method
DE19609709C2 (de) 1996-03-13 1999-05-20 Kaiser Gmbh & Co Kg Elektrische Hohlwanddose
US6170428B1 (en) * 1996-07-15 2001-01-09 Applied Materials, Inc. Symmetric tunable inductively coupled HDP-CVD reactor
US6486081B1 (en) * 1998-11-13 2002-11-26 Applied Materials, Inc. Gas distribution system for a CVD processing chamber
EP1366208A1 (de) 2001-02-26 2003-12-03 Unaxis Balzers Aktiengesellschaft Verfahren zur herstellung von teilen und vakuumbehandlungssystem
JP2004305950A (ja) 2003-04-09 2004-11-04 Tokyo Electron Ltd 排気トラップ、排気トラップのクリーニング方法、及び、反応処理装置
DE102005049266B4 (de) 2005-10-14 2007-12-06 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zur Plasmabehandlung von Objekten
JP5036354B2 (ja) 2006-04-04 2012-09-26 東京エレクトロン株式会社 成膜装置の排気系構造、成膜装置、および排ガスの処理方法
JP2008288281A (ja) 2007-05-15 2008-11-27 Hitachi Kokusai Electric Inc 半導体装置の製造方法および基板処理装置
US20100183825A1 (en) 2008-12-31 2010-07-22 Cambridge Nanotech Inc. Plasma atomic layer deposition system and method
TWI719473B (zh) * 2011-10-05 2021-02-21 美商應用材料股份有限公司 對稱電漿處理腔室
TWI588286B (zh) 2013-11-26 2017-06-21 烏翠泰克股份有限公司 經改良的電漿強化原子層沉積方法、周期及裝置
WO2015119737A1 (en) * 2014-02-06 2015-08-13 Applied Materials, Inc. Inline dps chamber hardware design to enable axis symmetry for improved flow conductance and uniformity
US9890456B2 (en) 2014-08-21 2018-02-13 Asm Ip Holding B.V. Method and system for in situ formation of gas-phase compounds
US10438795B2 (en) 2015-06-22 2019-10-08 Veeco Instruments, Inc. Self-centering wafer carrier system for chemical vapor deposition
US20170241019A1 (en) 2016-02-22 2017-08-24 Ultratech, Inc. Pe-ald methods with reduced quartz-based contamination
DE102016108845A1 (de) 2016-05-12 2017-11-16 Stephan Wege Gasinjektor für Reaktorbereiche
JP6811146B2 (ja) 2017-06-23 2021-01-13 東京エレクトロン株式会社 ガス供給系を検査する方法
DE102019001615A1 (de) 2019-01-21 2020-07-23 Horst Wochnowski Explosions-basierte Abscheidung von superdünnen Hartstoffschichten innerhalb eines geschlossenen lnnenraums
US11594401B2 (en) 2020-02-25 2023-02-28 Taiwan Semiconductor Manufacturing Co., Ltd. Method for manufacturing semiconductor wafer with wafer chuck having fluid guiding structure

Also Published As

Publication number Publication date
WO2023147814A1 (de) 2023-08-10
EP4476758A1 (de) 2024-12-18
EP4476758B1 (de) 2025-08-13
KR20240144235A (ko) 2024-10-02
DE102022102768A1 (de) 2023-08-10
US20250157792A1 (en) 2025-05-15

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