EP4325558A1 - Halbleitergehäusestruktur und herstellungsverfahren - Google Patents

Halbleitergehäusestruktur und herstellungsverfahren Download PDF

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Publication number
EP4325558A1
EP4325558A1 EP22830682.5A EP22830682A EP4325558A1 EP 4325558 A1 EP4325558 A1 EP 4325558A1 EP 22830682 A EP22830682 A EP 22830682A EP 4325558 A1 EP4325558 A1 EP 4325558A1
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EP
European Patent Office
Prior art keywords
layer
base plate
interconnection region
package structure
interconnection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP22830682.5A
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English (en)
French (fr)
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EP4325558A4 (de
Inventor
Xiaofei Sun
Changhao QUAN
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Changxin Memory Technologies Inc
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Changxin Memory Technologies Inc
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Publication date
Priority claimed from CN202210806439.8A external-priority patent/CN117423663A/zh
Application filed by Changxin Memory Technologies Inc filed Critical Changxin Memory Technologies Inc
Publication of EP4325558A1 publication Critical patent/EP4325558A1/de
Publication of EP4325558A4 publication Critical patent/EP4325558A4/de
Pending legal-status Critical Current

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Definitions

  • the present application relates to the technical field of semiconductors, and in particular, to a semiconductor package structure and a manufacturing method.
  • embodiments of the present application provide a semiconductor package structure and a manufacturing method.
  • a first aspect of an embodiment of the present application provides a semiconductor package structure, including:
  • a material of the first material layer includes a conductive material or an insulation material.
  • the semiconductor package structure further includes a second material layer.
  • the second material layer is located on the top surface of the molding layer.
  • a material of the second material layer is the same as a material of the first material layer.
  • the semiconductor package structure further includes a plurality of first conductive wires and a plurality of second conductive wires.
  • Each of the plurality of first semiconductor chips is electrically connected to the first base plate by means of a respective one of the plurality of first conductive wires.
  • the second interconnection region is electrically connected to the first base plate by means of the plurality of second conductive wires.
  • the first interconnection region includes a plurality of first pads.
  • the second interconnection region includes a plurality of second pads.
  • the number of the plurality of second pads is greater than the number of the plurality of first pads.
  • An area of each of the plurality of second pads is less than an area of each of the plurality of first pads.
  • the sidewall between the first interconnection region and the top surface of the molding layer forms a first angle with the direction perpendicular to the first base plate.
  • the first angle is greater than or equal to 0° and less than 90°.
  • the semiconductor package structure further includes a second package structure.
  • the second package structure includes a first solder ball.
  • the first solder ball is electrically connected to the first interconnection region.
  • a second aspect of an embodiment of the present application provides a method for manufacturing a semiconductor package structure, including the following operations.
  • a first base plate is provided, where the first base plate is provided with a first surface.
  • a first chip stack body is formed on the first base plate, where the first chip stack body includes a plurality of first semiconductor chips that are successively stacked onto one another in a direction perpendicular to the first base plate, and the first chip stack body is electrically connected to the first surface of the first base plate.
  • An interposer layer is formed on the first chip stack body, where the interposer layer is provided with a first interconnection surface, the first interconnection surface is provided with a first interconnection region and a second interconnection region, and the first interconnection region is electrically connected to the first base plate.
  • a molding layer is formed, where the molding layer is configured to seal the first chip stack body, the interposer layer and the first surface of the first base plate.
  • the first interconnection region is unsealed by the molding layer, and the second interconnection region is sealed by the molding layer.
  • a first material layer is formed on a sidewall between the first interconnection region and the top surface of the molding layer on the second interconnection region.
  • the method further includes the following operations:
  • the method further includes the following operation.
  • a plurality of first pads are formed on the first interconnection region, and a plurality of second pads are formed on the second interconnection region.
  • the number of the plurality of second pads is greater than the number of the plurality of first pads.
  • An area of each of the plurality of second pads is less than an area of each of the plurality of first pads.
  • the method further includes the following operation.
  • a covering layer is formed on the first interconnection region of the interposer layer.
  • the covering layer includes a first portion and second portions located on two sides of the first portion.
  • the first portion and the second portions form an inverted U-shape to form a sealed cavity with the interposer layer.
  • An angle between each of the second portions and the direction perpendicular to the first base plate is a first angle, and the first angle is greater than or equal to 0° and less than 90°.
  • a material of the covering layer includes a conductive material or an insulation material.
  • the method further includes the following operations.
  • a molding layer pre-layer which is configured to seal the first chip stack body, the interposer layer, the covering layer and the first surface of the first base plate is formed.
  • a part of the molding layer pre-layer and the first portion of the covering layer are removed, where the second portions are retained to form the first material layer.
  • the method further includes the following operation.
  • a second material layer is formed on the top surface of the molding layer.
  • a material of the second material layer is the same as a material of the first material layer.
  • the method further includes the following operations.
  • a second package structure is formed, where the second package structure includes a joint face and a first solder ball located on the joint face.
  • the first solder ball is electrically connected to the first interconnection region.
  • the joint face is connected to the second material layer.
  • the subsequent second package structure may be connected to the first chip stack body and the first base plate by means of the first interconnection region on the interposer layer. Therefore, the interconnection among the chip structures with different types or different specifications can be realized, so as to cause a combination among different chip structures to be more flexible.
  • the first chip stack body and the subsequent second package structure connected to the first chip stack body are packaged independently, it is easier to perform test and failure analysis.
  • the first material layer is formed on the sidewall between the top surface of the molding layer and the first interconnection region, so that a region where the interposer layer is in contact with the subsequent second package structure connected to the interposer layer can be protected.
  • first element, component, region, layer or section discussed below may be represented as a second element, component, region, layer or section. While the second element, component, region, layer or section is discussed, it does not mean that the first element, component, region, layer or section is necessarily existent in the present application.
  • Spatial relationship terms such as “under”, “below”, “lower”, “underneath”, “above”, “upper” and the like, may be used here for conveniently describing so that a relationship between one element or feature shown in the drawings and other elements or features is described. It should be understood that in addition to orientations shown in the drawings, the spatial relationship terms are intended to further include the different orientations of a device in use and operation. For example, if the device in the drawings is turned over, then the elements or the features described as “below” or “underneath” or “under” other elements may be oriented “on” the other elements or features. Therefore, the exemplary terms “below” and “under” may include two orientations of up and down. The device may be otherwise oriented (rotated by 90 degrees or other orientations) and the spatial descriptions used here are interpreted accordingly.
  • FIG. 1 is a schematic diagram of a semiconductor package structure according to an embodiment of the present application.
  • the semiconductor package structure includes:
  • the subsequent second package structure may be connected to the first chip stack body and the first base plate by means of the first interconnection region on the interposer layer. Therefore, the interconnection among the chip structures with different types or different specifications can be realized, so as to cause a combination among different chip structures to be more flexible.
  • the first chip stack body and the subsequent second package structure connected to the first chip stack body are packaged independently, it is easier to perform test and failure analysis.
  • the first material layer is formed on the sidewall between the top surface of the molding layer and the first interconnection region, so that a region where the interposer layer is in contact with the subsequent second package structure connected to the interposer layer can be protected.
  • FIG. 2 is a schematic diagram of a first base plate according to an embodiment of the present application.
  • the first base plate 10 may be a Printed Circuit Board, PCB or a redistribution base plate.
  • the first base plate 10 includes a base plate substrate 11, a base plate upper insulating dielectric layer 12 disposed on an upper surface of the base plate substrate 11, and a base plate lower insulating dielectric layer 13 disposed on a lower surface of the base plate substrate 11.
  • the base plate substrate 11 may be a silicon substrate, a germanium substrate, a silicon germanium substrate, a silicon carbide substrate, a Silicon On Insulator, SOI substrate, or a Germanium On Insulator, GOI substrate, or may be a substrate including other element semiconductors or compound semiconductors, such as a glass substrate or a III-V compound substrates (for example, a gallium nitride substrate or a gallium arsenide substrate), or may be a stack of layer structures such as Si/SiGe, or may be other epitaxial structures such as Silicon Germanium On Insulator, SGOI.
  • Each of the base plate upper insulating dielectric layer 12 and the base plate lower insulating dielectric layer 13 may be a solder mask layer.
  • each of the material of the base plate upper insulating dielectric layer 12 and the material of the base plate lower insulating dielectric layer 13 may be green paint.
  • the first surface 101 of the first base plate 10 is an upper surface of the base plate upper insulating dielectric layer 12.
  • the first base plate 10 further includes a second surface 102, that is, a lower surface of the base plate lower insulating dielectric layer 13.
  • the first base plate 10 further includes a base plate upper connection pad 14 located in the base plate upper insulating dielectric layer 12, a base plate lower connection pad 15 located in the base plate lower insulating dielectric layer 13, and a base plate connection via 16 which penetrates through the base plate substrate 11 and which connects the base plate upper connection pad 14 and the base plate lower connection pad 15 with each other.
  • Each of the material of the base plate upper connection pad 14 and the material of the base plate lower connection pad 15 may include at least one of aluminum, copper, nickel, tungsten, platinum, or gold.
  • the base plate connection via 16 may be a Through-Silicon-Via, TSV.
  • the first base plate 10 further includes a base plate connection bump 17.
  • the base plate connection bump 17 may electrically connect the semiconductor package structure to an external apparatus, so that at least one of a control signal, a power signal or a grounding signal that is configured to operate the first chip stack body may be received from the external apparatus, or a data signal to be stored in the first chip stack body may be received from the external apparatus, or data in the first chip stack body may also be provided to the external apparatus.
  • the base plate connection bump 17 includes a conductive material.
  • the base plate connection bump 17 is a solder ball. It is to be understood that a shape of the base plate connection bump provided in this embodiment of the present application is only an inferior and feasible specific implementation in the embodiments of the present application, and does not constitute a limitation of the present application.
  • the base plate connection bump may also be a structure with other shapes. The number, spacing, and location of the base plate connection bumps are not limited to any specific arrangement, and various modifications may be made.
  • the first base plate 10 further includes a first signal transmission region 110 located on one side of the first base plate 10, and a second signal transmission region 120 located on another side of the first base plate 10 opposite to the one side.
  • the first signal transmission region 110 is electrically connected to the first chip stack body 20.
  • the second signal transmission region 120 is electrically connected to the interposer layer 30.
  • the first base plate 10 further includes a third signal transmission region 130 located between the first signal transmission region 110 and the second signal transmission region 120.
  • the first chip stack body 20 is located on the third signal transmission region 130.
  • the first chip stack body 20 includes a plurality of first semiconductor chips 21 that are successively stacked onto one another in a direction perpendicular to the first base plate 10.
  • a horizontal area of the semiconductor package structure can be saved.
  • each of the plurality of first semiconductor chips may be a DRAM chip.
  • FIG. 3 is a schematic diagram of an interposer layer according to an embodiment of the present application.
  • the interposer layer 30 includes a base 33, an intermediary upper insulating dielectric layer 34 disposed on an upper surface of the base 33, and an intermediary lower insulating dielectric layer 35 disposed on a lower surface of the base 33.
  • the base 33 may be a silicon substrate, a germanium substrate, a silicon germanium substrate, a silicon carbide substrate, an SOI substrate, or a GOI substrate, or may be a substrate including other element semiconductors or compound semiconductors, such as a glass substrate or a III-V compound substrates (for example, a gallium nitride substrate or a gallium arsenide substrate), or may be a stack of layer structures such as Si/SiGe, or may be other epitaxial structures such as S+GOI.
  • Each of the intermediary upper insulating dielectric layer 34 and the intermediary lower insulating dielectric layer 35 may be a solder mask layer.
  • each of the material of the intermediary upper insulating dielectric layer 34 and the material of the intermediary lower insulating dielectric layer 35 may be green paint.
  • an electromagnetic shielding layer (not shown) is provided in the base 33 of the interposer layer 30.
  • the electromagnetic shielding layer By disposing the electromagnetic shielding layer in the base of the interposer layer, information interference between the second package structure and the first chip stack body can be prevented, thereby preventing the operation of devices from being affected.
  • the interposer layer 30 includes a first interconnection region 31 and a second interconnection region 32.
  • the first interconnection region 31 includes a plurality of first pads 311
  • the second interconnection region 32 includes a plurality of second pads 321.
  • the number of the plurality of second pads 321 is greater than the number of the plurality of first pads 311, and an area of each of the plurality of second pads 321 is less than an area of each of the plurality of first pads 311.
  • the layout design is relatively fixed.
  • the plurality of first pads carry the interconnection between the second package structure and the first base plate, so that the layout design is more flexible.
  • the signal transmission efficiency can be enhanced by designing the plurality of second pads to have a large number and a smaller area.
  • Each of the material of the plurality of first pads 311 and the material of the plurality of second pads 321 may include at least one of aluminum, copper, nickel, tungsten, platinum, or gold.
  • the first base plate 10 in the direction perpendicular to the first base plate 10, has a first thickness, and the interposer layer 30 has a second thickness, where the first thickness is greater than the second thickness.
  • the semiconductor package structure further includes: a plurality of first conductive wires 51, where each of the plurality of first semiconductor chips 21 is electrically connected to the first base plate 10 by means of a respective one of the plurality of first conductive wires 51; and a second conductive wire 52, where the second interconnection region 32 is electrically connected to the first base plate 10 by means of the plurality of second conductive wires 52.
  • each of the plurality of first semiconductor chips 21 is provided with a first connection end 201.
  • the first connection end 201 and the first signal transmission region 110 are located on the same side.
  • Each of the plurality of first conductive wires 51 extends from the first connection end 201 to the first signal transmission region 110, to achieve an electric connection between the plurality of first semiconductor chips 21 and the first base plate 10.
  • the plurality of second pads 321 are formed on the second interconnection region 32.
  • the plurality of second conductive wires 52 extend from the plurality of second pads 321 to the second signal transmission region 120, to achieve an electric connection between the interposer layer 30 and the first base plate 10.
  • the first chip stack body is electrically connected to the first base plate by means of wire bonding.
  • the wire bonding includes an overhang manner and a Film on Wire, FOW manner.
  • wire bonding is performed by means of the overhang manner. Any two adjacent first semiconductor chips 21 of the plurality of first semiconductor chips 21 are connected to each other by means of an adhesive film 60.
  • the adhesive film 60 does not cover the first connection end 201 and a respective one of the plurality of first conductive wires 51 on a respective one of the plurality of first semiconductor chips 21 located below the adhesive film 60.
  • the adhesive film 60 is misaligned with the respective one of the plurality of first semiconductor chips 21 located below the adhesive film 60.
  • wire bonding is performed by means of the FOW manner (not shown).
  • the plurality of first semiconductor chips are aligned with each other along a direction perpendicular to the first base plate.
  • the adhesive film between two adjacent first semiconductor chips of the plurality of first semiconductor chips covers the first connection end and a respective one of the plurality of first conductive wires on a respective one of the plurality of first semiconductor chips located below the adhesive film.
  • the electric connection by means of lead wires is only an inferior and feasible specific implementation in the embodiments of the present application, and does not constitute a limitation of the present application.
  • the electric connection may also be achieved by means of other manners, for example, hybrid bonding or bump interconnection.
  • the sidewall between the top surface 401 of the molding layer 40 and the first interconnection region 31 forms a first angle with the direction perpendicular to the first base plate 10.
  • the first angle is greater than or equal to 0° and less than 90°.
  • the sidewall between the top surface 401 of the molding layer 40 and the first interconnection region 31 forms an angle with the direction perpendicular to the first base plate 10, where the angle is 0°. That is, the sidewall between the top surface 401 of the molding layer 40 and the first interconnection region 31 is perpendicular to the first base plate 10.
  • a simpler process can be achieved by setting the sidewall of the molding layer to be vertical.
  • the sidewall between the top surface 401 of the molding layer 40 and the first interconnection region 31 forms an angle a with the direction perpendicular to the first base plate 10, where the angle a is greater than 0° and less than 90°.
  • the subsequent interconnection of the molding layer with the second package structure can be more convenient by setting the sidewall of the molding layer to be non-vertical.
  • a material of the first material layer 81 includes a conductive material or an insulation material.
  • electrostatic protection can be achieved; and when the material of the first material layer is an insulation material, insulation isolation can be achieved.
  • the semiconductor package structure further includes a second material layer 82 located on the top surface 401 of the molding layer 40.
  • a material of the second material layer 82 is the same as the material of the first material layer 81.
  • the second material layer is located between the molding layer and the second package structure, so that the sealing between the first chip stack body and the second package structure can be achieved, a joint surface between the molding layer and the second package structure can also be protected, and external moisture and electromagnetic interference can also be prevented.
  • each of the first material layer 81 and the second material layer 82 is made of a conductive material
  • a heat conduction channel from the periphery of the first interconnection region 31 on the interposer layer to the molding layer 40 may be formed, so that the thermal performance of the product can be improved.
  • the first material layer 81 and the second material layer 82 may be made of copper, tin or copper-tin alloy, or the like.
  • a sealed protection ring may be formed from the periphery of the first interconnection region 31 on the interposer layer to the molding layer 40, so that the structural stability of the product can be improved.
  • the first material layer 81 and the second material layer 82 may be a silicon oxide layer, a silicon nitride layer or a silicon oxynitride layer.
  • the first material layer 81 may be made of copper, tin or copper-tin alloy, or the like, and the second material layer 82 may be made of silicon dioxide.
  • the first material layer 81 may be made of silicon dioxide, and the second material layer 82 may be made of copper, tin or copper-tin alloy, or the like.
  • the semiconductor package structure further includes a second package structure 70.
  • the second package structure 70 includes a plurality of first solder balls 71.
  • the plurality of first solder balls 71 are electrically connected to the first interconnection region 31.
  • a height H of each of the plurality of first solder balls 71 is greater than the preset height h.
  • the second package structure by setting the height of each of the plurality of first solder balls to be greater than the height between the first interconnection region and the top surface of the molding layer, the second package structure can be tightly connected to the interposer layer.
  • the second package structure after the second package structure is connected to the interposer layer, there may be a gap between the second package structure and the molding layer. Therefore, the heat dissipation efficiency of a controller can be enhanced, and the impact of heat on chips can be reduced.
  • the second package structure 70 further includes a second base plate 72.
  • a structure of the second base plate 72 may be the same as or different from a structure of the base plate 10, which is not described herein again.
  • the second package structure 70 further includes a joint face 701.
  • the plurality of first solder balls 71 are located on the joint face 701, penetrate through the joint face 701 and are electrically connected to the second base plate 72.
  • a material of the joint face 701 may be silicon dioxide.
  • the second material layer 82 on the molding layer 40 is a silicon dioxide layer.
  • the second material layer 82 may be a copper layer, a tin layer, or a copper-tin layer.
  • the second material layer 82 may be a copper layer, a tin layer, or a copper-tin layer
  • a position on the joint face 701 corresponding to the second material layer 82 is provided with a copper layer, a tin layer, or a copper-tin layer.
  • the molding layer 40 in the direction perpendicular to the first base plate 10, has a first thickness.
  • the second package structure 70 includes a second molding layer 73. In the direction perpendicular to the first base plate 10, the second molding layer 73 has a second thickness. The first thickness is greater than or equal to the second thickness. Through the arrangement of such thickness, the second package structure may be effectively prevented from warping after being bonded to the interposer layer.
  • the second package structure 70 further includes a second semiconductor chip structure (not shown).
  • the type of the second semiconductor chip structure is the same as or different from the type of the first chip stack body 20.
  • the second semiconductor chip structure in the second package structure 70 is electrically connected to the second base plate 72.
  • the second semiconductor chip structure may be a Universal File Store, UFS chip.
  • the semiconductor package structure provided in the embodiments of the present application is applicable to UFS Multi Chip Package, UMCP of a Package on Package, PoP structure.
  • An embodiment of the present application further provides a method for manufacturing a semiconductor package structure.
  • the method includes the following operations.
  • a first base plate is provided, where the first base plate is provided with a first surface.
  • a first chip stack body is formed on the first base plate, where the first chip stack body includes a plurality of first semiconductor chips that are successively stacked onto one another in a direction perpendicular to the first base plate, and the first chip stack body is electrically connected to the first surface of the first base plate.
  • an interposer layer is formed on the first chip stack body, where the interposer layer is provided with a first interconnection surface, the first interconnection surface is provided with a first interconnection region and a second interconnection region, and the first interconnection region is electrically connected to the first base plate.
  • a molding layer is formed, where the molding layer is configured to seal the first chip stack body, the interposer layer and the first surface of the first base plate, the first interconnection region is unsealed by the molding layer, the second interconnection region is sealed by the molding layer, there is a preset height between the first interconnection region and a top surface of the molding layer on the second interconnection region, and a first material layer is formed on a sidewall between the first interconnection region and the top surface of the molding layer on the second interconnection region.
  • FIG. 6a to FIG. 6i are schematic diagrams of a semiconductor package structure during manufacturing according to an embodiment of the present application.
  • S501 is executed.
  • a first base plate 10 is provided, where the first base plate 10 is provided with a first surface 101.
  • the first base plate 10 may be a Printed Circuit Board, PCB or a redistribution base plate.
  • the first base plate 10 includes a base plate substrate 11, a base plate upper insulating dielectric layer 12 disposed on an upper surface of the base plate substrate 11, and a base plate lower insulating dielectric layer 13 disposed on a lower surface of the base plate substrate 11.
  • the base plate substrate 11 may be a silicon substrate, a germanium substrate, a silicon germanium substrate, a silicon carbide substrate, an SOI substrate, or a GOI substrate, or may be a substrate including other element semiconductors or compound semiconductors, such as a glass substrate or a III-V compound substrates (for example, a gallium nitride substrate or a gallium arsenide substrate), or may be a stack of layer structures such as Si/SiGe, or may be other epitaxial structures such as SGOI.
  • Each of the base plate upper insulating dielectric layer 12 and the base plate lower insulating dielectric layer 13 may be a solder mask layer.
  • each of the material of the base plate upper insulating dielectric layer 12 and the material of the base plate lower insulating dielectric layer 13 may be green paint.
  • the first surface 101 of the first base plate 10 is an upper surface of the base plate upper insulating dielectric layer 12.
  • the first base plate 10 further includes a second surface 102, that is, a lower surface of the base plate lower insulating dielectric layer 13.
  • the first base plate 10 further includes a base plate upper connection pad 14 located in the base plate upper insulating dielectric layer 12, a base plate lower connection pad 15 located in the base plate lower insulating dielectric layer 13, and a base plate connection via 16 which penetrates through the base plate substrate 11 and which connects the base plate upper connection pad 14 and the base plate lower connection pad 15 with each other.
  • Each of the material of the base plate upper connection pad 14 and the material of the base plate lower connection pad 15 may include at least one of aluminum, copper, nickel, tungsten, platinum, or gold.
  • the base plate connection via 16 may be a Through-Silicon-Via, TSV.
  • the first base plate 10 further includes a first signal transmission region 110 located on one side of the first base plate 10, and a second signal transmission region 120 located on another side of the first base plate 10 opposite to the one side.
  • the first signal transmission region 110 is electrically connected to a first chip stack body formed subsequently.
  • the second signal transmission region 120 is electrically connected to an interposer layer formed subsequently.
  • the first signal transmission region 110 and the second signal transmission region 120 are not connected to each other.
  • the first base plate 10 further includes a third signal transmission region 130 located between the first signal transmission region 110 and the second signal transmission region 120.
  • the first chip stack body formed subsequently is located on the third signal transmission region 130.
  • the first signal transmission region 110 and the third signal transmission region 130 are connected to each other, and the third signal transmission region 130 and the second signal transmission region 120 are not connected to each other.
  • a first chip stack body 20 is formed on the first base plate 10.
  • the first chip stack body 20 includes a plurality of first semiconductor chips 21 that are successively stacked onto one another in a direction perpendicular to the first base plate 10, and the first chip stack body 20 is electrically connected to the first surface 101 of the first base plate 10.
  • any two adjacent first semiconductor chips 21 of the plurality of first semiconductor chips 21 are connected to each other by means of an adhesive film 60.
  • the first chip stack body 20 is connected to the first base plate 10 by means of an adhesive film 60.
  • an interposer layer 30 is formed on the first chip stack body 20.
  • the interposer layer 30 is provided with a first interconnection surface 301.
  • the first interconnection surface 301 is provided with a first interconnection region 31 and a second interconnection region 32.
  • the first interconnection region 31 is electrically connected to the first base plate 10.
  • a carrier band 2 is pasted on a circular ring 1.
  • An adhesive film 60 is then pasted on the carrier band 2.
  • the interposer layer is pasted on the adhesive film 60.
  • the interposer layer is in a whole strip shape.
  • the interposer layer is cut to form units one by one shown in FIG. 6c .
  • the interposer layer 30 is formed on the first chip stack body 20.
  • an adhesive layer 60 is formed on the first chip stack body 20. Then, the single interposer layer 30 formed in FIG. 6c is pasted on the adhesive layer 60.
  • the interposer layer 30 includes a base 33, an intermediary upper insulating dielectric layer 34 disposed on an upper surface of the base 33, and an intermediary lower insulating dielectric layer 35 disposed on a lower surface of the base 33.
  • the base 33 may be a silicon substrate, a germanium substrate, a silicon germanium substrate, a silicon carbide substrate, an SOI substrate, or a GOI substrate, or may be a substrate including other element semiconductors or compound semiconductors, such as a glass substrate or a III-V compound substrates (for example, a gallium nitride substrate or a gallium arsenide substrate), or may be a stack of layer structures such as Si/SiGe, or may be other epitaxial structures such as SGOI.
  • Each of the intermediary upper insulating dielectric layer 34 and the intermediary lower insulating dielectric layer 35 may be a solder mask layer.
  • each of the material of the intermediary upper insulating dielectric layer 34 and the material of the intermediary lower insulating dielectric layer 35 may be green paint.
  • an electromagnetic shielding layer (not shown) is provided in the base 33 of the interposer layer 30.
  • the electromagnetic shielding layer By disposing the electromagnetic shielding layer in the base of the interposer layer, information interference between the second package structure and the first chip stack body can be prevented, thereby preventing the operation of devices from being affected.
  • the method further includes the following operations.
  • a plurality of first pads 311 are formed on the first interconnection region 31, and a plurality of second pads 321 are formed on the second interconnection region 32.
  • the number of the plurality of second pads 321 is greater than the number of the plurality of first pads 311.
  • An area of each of the plurality of second pads 321 is less than an area of each of the plurality of first pads 311.
  • the layout design is relatively fixed.
  • the plurality of first pads carry the interconnection between the second package structure and the first base plate, so that the layout design is more flexible.
  • the signal transmission efficiency can be enhanced by designing the plurality of second pads to have a large number and a smaller area.
  • Each of the material of the plurality of first pads 311 and the material of the plurality of second pads 321 may include at least one of aluminum, copper, nickel, tungsten, platinum, or gold.
  • the first base plate 10 in the direction perpendicular to the first base plate 10, has a first thickness, and the interposer layer 30 has a second thickness, where the first thickness is greater than the second thickness.
  • a covering layer 80 is formed on the first interconnection region 31 of the interposer layer 30.
  • the covering layer 80 includes a first portion 801 and second portions 802 located on two sides of the first portion 801.
  • the first portion 801 and the second portions 802 form an inverted U-shape, to form a sealed cavity with the interposer layer 30.
  • An angle between each of the second portions 802 and the direction perpendicular to the first base plate 10 is a first angle, where the first angle is greater than or equal to 0° and less than 90°.
  • the angle between each of the second portions 802 of the covering layer 80 and the direction perpendicular to the first base plate 10 is 0°.
  • a structure of the formed molding layer is shown in FIG. 1 .
  • the angle between each of the second portions of the covering layer and the direction perpendicular to the first base plate is greater than 0° and less than 90°.
  • the structure of the formed molding layer is shown in FIG. 4a .
  • the covering layer is formed on the first interconnection region of the interposer layer, so that after the molding layer is formed subsequently, the first interconnection region is exposed without using a special-shaped packaging mold, but the first interconnection region may be directly exposed by removing the first portion of the covering layer.
  • the special-shaped packaging mold is high in manufacturing cost and more complicated in process. Therefore, by forming the covering layer on the first interconnection region, the cost can be reduced, and a formation process can be simpler as well.
  • a material of the covering layer 80 includes a conductive material or an insulation material.
  • the interposer layer attached to the circular ring 1 is required to be cleaned to remove impurities and dust, to prevent the interposer layer from being dirty and affecting the performance of the semiconductor package structure.
  • a plurality of first conductive wires 51 are formed, where each of the plurality of first semiconductor chips 21 is electrically connected to the first base plate 10 by means of a respective one of the plurality of first conductive wires 51; and a plurality of second conductive wires 52 are formed, where the second interconnection region 32 is electrically connected to the first base plate 10 by means of the plurality of second conductive wires 52.
  • each of the plurality of the first semiconductor chips 21 is provided with a first connection end 201.
  • the first connection end 201 and the first signal transmission region 110 are located on the same side.
  • Each of the plurality of first conductive wires 51 extends from the first connection end 201 to the first signal transmission region 110, to achieve an electric connection between the plurality of first semiconductor chips 21 and the first base plate 10.
  • the plurality of second pads 321 are formed on the second interconnection region 32.
  • the plurality of second conductive wires 52 extend from the plurality of second pads 321 to the second signal transmission region 120, to achieve an electric connection between the interposer layer 30 and the first base plate 10.
  • the first chip stack body is electrically connected to the first base plate by means of wire bonding.
  • the wire bonding includes an overhang manner and a Film on Wire, FOW manner.
  • wire bonding is performed by means of the overhang manner. Any two adjacent first semiconductor chips 21 of the plurality of first semiconductor chips 21 are connected to each other by means of an adhesive film 60.
  • the adhesive film 60 does not cover the first connection end 201 and a respective one of the plurality of first conductive wires 51 on a respective one of the plurality of first semiconductor chips 21 located below the adhesive film 60.
  • the adhesive film 60 is misaligned with the respective one of the plurality of first semiconductor chips 21 located below the adhesive film 60.
  • wire bonding is performed by means of the FOW manner (not shown).
  • the plurality of first semiconductor chips are aligned with each other along a direction perpendicular to the first base plate.
  • the adhesive film between two adjacent first semiconductor chips of the plurality of first semiconductor chips covers the first connection end and a respective one of the plurality of first conductive wires on a respective one of the plurality of first semiconductor chips located below the adhesive film.
  • a molding layer 40 is formed, where the molding layer 40 is configured to seal the first chip stack body 20, the interposer layer 30 and the first surface 101 of the first base plate 10.
  • the first interconnection region 31 is unsealed by the molding layer 40, and the second interconnection region 32 is sealed by the molding layer 40.
  • a first material layer 81 is formed on a sidewall between the first interconnection region 31 and the top surface 401 of the molding layer 40 on the second interconnection region 32.
  • a first packaging mold 91 and a second packaging mold 92 are formed.
  • a surface of the first packaging mold 91 is parallel to a surface of the first base plate 10.
  • the first packaging mold 91 is located above the covering layer 80 and is located at a certain distance from the covering layer 80.
  • the second packaging mold 92 is located below the first base plate 10, and is parallel to the surface of the first base plate 10.
  • a molding layer pre-layer 400 which is configured to seal the first chip stack body 20, the interposer layer 30, the covering layer 80 and the first surface 101 of the first base plate 10, is formed by using the first packaging mold 91 and the second packaging mold 92 as masks.
  • the molding layer pre-layer 400 includes an EMC material.
  • the first packaging mold 91 and the second packaging mold 92 are removed.
  • the surface of the molding layer pre-layer 400 may be ground by using a grinding process, to remove a part of the molding layer pre-layer 400 and the first portion 801 of the covering layer 80.
  • a base plate connection bump 17 is formed on the second surface 102 of the first base plate 10.
  • the base plate connection bump 17 includes a conductive material.
  • the method further includes the following operation.
  • a second material layer 82 is formed on the top surface 401 of the molding layer 40.
  • a material of the second material layer 82 is the same as a material of the first material layer 81.
  • a second material layer pre-layer (not shown) may be formed on the top surface 401 of the molding layer 40 and a surface of the interposer layer 30. Then, the second material layer pre-layer on the surface of the interposer layer 30 is removed, where the second material layer pre-layer on the top surface 401 of the molding layer 40 is retained, to form the second material layer 82.
  • a second package structure 70 is formed, where the second package structure 70 includes a joint face 701 and a plurality of first solder balls 71 located on the joint face 701. The plurality of first solder balls 71 are electrically connected to the first interconnection region 31.
  • the joint face 701 is connected to the second material layer 82.
  • a height H of each of the plurality of first solder balls 71 is greater than a preset height h between the top surface 401 of the molding layer 40 and the first interconnection region 31.
  • the second package structure by setting the height of each of the plurality of first solder balls to be greater than the height between the top surface of the molding layer and the first interconnection region, the second package structure can be tightly connected to the interposer layer.
  • the second package structure after the second package structure is connected to the interposer layer, there may be a gap between the second package structure and the molding layer. Therefore, the heat dissipation efficiency of a controller can be enhanced, and the impact of heat on chips can be reduced.
  • the second package structure 70 further includes a second base plate 72.
  • a structure of the second base plate 72 is the same as or different from a structure of the base plate 10, which is not described herein again.
  • the second package structure 70 further includes a joint face 701.
  • the plurality of first solder balls 71 are located on the joint face 701, penetrate through the joint face 701, and are electrically connected to the second base plate 72.
  • a material of the joint face 701 may be silicon dioxide.
  • the second material layer 82 on the molding layer 40 is a silicon dioxide layer.
  • the second material layer 82 may be a copper layer, a tin layer, or a copper-tin layer.
  • the second material layer 82 may be a copper layer, a tin layer, or a copper-tin layer
  • a position on the joint face 701 corresponding to the second material layer 82 is provided with a copper layer, a tin layer, or a copper-tin layer.
  • the molding layer 40 in the direction perpendicular to the first base plate 10, has a first thickness.
  • the second package structure 70 includes a second molding layer 73. In the direction perpendicular to the first base plate 10, the second molding layer 73 has a second thickness. The first thickness is greater than or equal to the second thickness. In an embodiment, the second molding layer 73 includes an EMC material.
  • the second package structure 70 further includes a second semiconductor chip structure (not shown).
  • the type of the second semiconductor chip structure is the same as or different from the type of the first chip stack body 20.
  • the second semiconductor chip structure in the second package structure 70 is electrically connected to the second base plate 72.
  • the second semiconductor chip structure may be a Universal File Store, UFS chip.
  • the subsequent second package structure may be connected to the first chip stack body and the first base plate by means of the first interconnection region on the interposer layer. Therefore, the interconnection among the chip structures with different types or different specifications can be realized, so as to cause a combination among different chip structures to be more flexible.
  • the first chip stack body and the subsequent second package structure connected to the first chip stack body are packaged independently, it is easier to perform test and failure analysis.
  • the first material layer is formed on the sidewall between the top surface of the molding layer and the first interconnection region, so that a region where the interposer layer is in contact with the subsequent second package structure connected to the interposer layer can be protected.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
EP22830682.5A 2022-07-08 2022-08-01 Halbleitergehäusestruktur und herstellungsverfahren Pending EP4325558A4 (de)

Applications Claiming Priority (2)

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CN202210806439.8A CN117423663A (zh) 2022-07-08 2022-07-08 半导体封装结构及制备方法
PCT/CN2022/109430 WO2024007392A1 (zh) 2022-07-08 2022-08-01 半导体封装结构及制备方法

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US8124451B2 (en) * 2007-09-21 2012-02-28 Stats Chippac Ltd. Integrated circuit packaging system with interposer
US20120228751A1 (en) * 2011-03-07 2012-09-13 Samsung Electronics Co., Ltd. Semiconductor package and method of manufacturing the same
US8962393B2 (en) * 2011-09-23 2015-02-24 Stats Chippac Ltd. Integrated circuit packaging system with heat shield and method of manufacture thereof

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