EP4133536A4 - Structure de diode électroluminescente et procédé de fabrication associé - Google Patents
Structure de diode électroluminescente et procédé de fabrication associéInfo
- Publication number
- EP4133536A4 EP4133536A4 EP21784647.6A EP21784647A EP4133536A4 EP 4133536 A4 EP4133536 A4 EP 4133536A4 EP 21784647 A EP21784647 A EP 21784647A EP 4133536 A4 EP4133536 A4 EP 4133536A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- manufacturing
- light emitting
- emitting diode
- diode structure
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US202063007829P | 2020-04-09 | 2020-04-09 | |
US17/162,515 US20210320145A1 (en) | 2020-04-09 | 2021-01-29 | Light Emitting Diode Structure and Method for Manufacturing the Same |
PCT/CN2021/083179 WO2021203987A1 (fr) | 2020-04-09 | 2021-03-26 | Structure de diode électroluminescente et procédé de fabrication associé |
Publications (2)
Publication Number | Publication Date |
---|---|
EP4133536A1 EP4133536A1 (fr) | 2023-02-15 |
EP4133536A4 true EP4133536A4 (fr) | 2024-05-08 |
Family
ID=76333624
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP21784647.6A Pending EP4133536A4 (fr) | 2020-04-09 | 2021-03-26 | Structure de diode électroluminescente et procédé de fabrication associé |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP4133536A4 (fr) |
JP (2) | JP2023525439A (fr) |
KR (1) | KR20220139993A (fr) |
CN (1) | CN112992964B (fr) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114023861A (zh) * | 2021-11-01 | 2022-02-08 | 镭昱光电科技(苏州)有限公司 | Micro-LED芯片结构及其制作方法 |
CN114497333A (zh) * | 2021-12-21 | 2022-05-13 | 镭昱光电科技(苏州)有限公司 | Micro-LED微显示芯片及其制作方法 |
CN114628563B (zh) * | 2022-05-12 | 2022-09-09 | 镭昱光电科技(苏州)有限公司 | Micro LED显示芯片及其制备方法 |
CN114759130B (zh) * | 2022-06-15 | 2022-09-02 | 镭昱光电科技(苏州)有限公司 | 一种Micro-LED显示芯片及其制备方法 |
CN115498089B (zh) * | 2022-11-16 | 2023-02-17 | 镭昱光电科技(苏州)有限公司 | 微显示器件及制备方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20180287027A1 (en) * | 2017-03-30 | 2018-10-04 | Vuereal Inc. | Vertical solid-state devices |
US20190164947A1 (en) * | 2017-11-24 | 2019-05-30 | Lumens Co., Ltd. | Method for fabricating high-efficiency micro-led module |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4020838B2 (ja) * | 2003-07-14 | 2007-12-12 | 三洋電機株式会社 | 発光素子アレイ及び光プリントヘッド |
KR100867541B1 (ko) * | 2006-11-14 | 2008-11-06 | 삼성전기주식회사 | 수직형 발광 소자의 제조 방법 |
US8642363B2 (en) * | 2009-12-09 | 2014-02-04 | Nano And Advanced Materials Institute Limited | Monolithic full-color LED micro-display on an active matrix panel manufactured using flip-chip technology |
CN202332853U (zh) * | 2011-10-19 | 2012-07-11 | 贵州大学 | 大功率倒装阵列led芯片 |
JP2015181138A (ja) * | 2012-07-27 | 2015-10-15 | 株式会社ブイ・テクノロジー | 半導体発光装置 |
US9153548B2 (en) * | 2013-09-16 | 2015-10-06 | Lux Vue Technology Corporation | Adhesive wafer bonding with sacrificial spacers for controlled thickness variation |
WO2016122725A1 (fr) * | 2015-01-30 | 2016-08-04 | Technologies Llc Sxaymiq | Micro-diode électroluminescente pourvue d'un miroir latéral métallique |
CN109417082B (zh) * | 2016-03-18 | 2023-08-01 | Lg伊诺特有限公司 | 半导体器件以及包括半导体器件的显示装置 |
JP6815129B2 (ja) * | 2016-08-26 | 2021-01-20 | 株式会社沖データ | 半導体装置、光プリントヘッド、及び画像形成装置 |
CN106876406B (zh) * | 2016-12-30 | 2023-08-08 | 上海君万微电子科技有限公司 | 基于iii-v族氮化物半导体的led全彩显示器件结构及制备方法 |
KR102422386B1 (ko) * | 2017-04-21 | 2022-07-20 | 주식회사 루멘스 | 마이크로 led 디스플레이 장치 및 그 제조방법 |
TWI689092B (zh) * | 2017-06-09 | 2020-03-21 | 美商晶典有限公司 | 具有透光基材之微發光二極體顯示模組及其製造方法 |
US10177178B1 (en) * | 2017-07-05 | 2019-01-08 | Gloablfoundries Inc. | Assembly of CMOS driver wafer and LED wafer for microdisplay |
JP7268972B2 (ja) * | 2017-09-07 | 2023-05-08 | キヤノン株式会社 | 発光サイリスタ、発光サイリスタアレイ、露光ヘッド、および画像形成装置 |
CN108598104A (zh) * | 2018-06-25 | 2018-09-28 | 广东省半导体产业技术研究院 | 一种并联微led阵列及其制作方法 |
CN109713089A (zh) * | 2018-12-28 | 2019-05-03 | 映瑞光电科技(上海)有限公司 | GaN基LED白光垂直结构芯片及其制备方法 |
CN109920814B (zh) * | 2019-03-12 | 2022-10-04 | 京东方科技集团股份有限公司 | 显示基板及制造方法、显示装置 |
-
2021
- 2021-03-25 CN CN202110317555.9A patent/CN112992964B/zh active Active
- 2021-03-26 KR KR1020227031981A patent/KR20220139993A/ko unknown
- 2021-03-26 JP JP2022555664A patent/JP2023525439A/ja active Pending
- 2021-03-26 EP EP21784647.6A patent/EP4133536A4/fr active Pending
-
2024
- 2024-02-22 JP JP2024025887A patent/JP2024059811A/ja active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20180287027A1 (en) * | 2017-03-30 | 2018-10-04 | Vuereal Inc. | Vertical solid-state devices |
US20190164947A1 (en) * | 2017-11-24 | 2019-05-30 | Lumens Co., Ltd. | Method for fabricating high-efficiency micro-led module |
Non-Patent Citations (1)
Title |
---|
See also references of WO2021203987A1 * |
Also Published As
Publication number | Publication date |
---|---|
JP2023525439A (ja) | 2023-06-16 |
CN112992964B (zh) | 2023-07-07 |
JP2024059811A (ja) | 2024-05-01 |
CN112992964A (zh) | 2021-06-18 |
KR20220139993A (ko) | 2022-10-17 |
EP4133536A1 (fr) | 2023-02-15 |
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