EP3932660A4 - Corps multicouche et corps cristallin - Google Patents

Corps multicouche et corps cristallin Download PDF

Info

Publication number
EP3932660A4
EP3932660A4 EP19917402.0A EP19917402A EP3932660A4 EP 3932660 A4 EP3932660 A4 EP 3932660A4 EP 19917402 A EP19917402 A EP 19917402A EP 3932660 A4 EP3932660 A4 EP 3932660A4
Authority
EP
European Patent Office
Prior art keywords
crystalline
multilayer
multilayer body
crystalline body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP19917402.0A
Other languages
German (de)
English (en)
Other versions
EP3932660A1 (fr
Inventor
Masaki Fujikane
Naoki Tambo
Kunihiko Nakamura
Kouhei Takahashi
Yasuyuki Naito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Intellectual Property Management Co Ltd
Original Assignee
Panasonic Intellectual Property Management Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Intellectual Property Management Co Ltd filed Critical Panasonic Intellectual Property Management Co Ltd
Publication of EP3932660A1 publication Critical patent/EP3932660A1/fr
Publication of EP3932660A4 publication Critical patent/EP3932660A4/fr
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0081—Thermal properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/02—Physical, chemical or physicochemical properties
    • B32B7/027—Thermal properties
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
    • H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/857—Thermoelectric active materials comprising compositions changing continuously or discontinuously inside the material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals

Landscapes

  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Thermal Sciences (AREA)
  • Ceramic Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Laminated Bodies (AREA)
  • Non-Volatile Memory (AREA)
  • Optical Integrated Circuits (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
EP19917402.0A 2019-02-28 2019-09-24 Corps multicouche et corps cristallin Pending EP3932660A4 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019035361 2019-02-28
PCT/JP2019/037206 WO2020174733A1 (fr) 2019-02-28 2019-09-24 Corps multicouche et corps cristallin

Publications (2)

Publication Number Publication Date
EP3932660A1 EP3932660A1 (fr) 2022-01-05
EP3932660A4 true EP3932660A4 (fr) 2022-04-13

Family

ID=72238395

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19917402.0A Pending EP3932660A4 (fr) 2019-02-28 2019-09-24 Corps multicouche et corps cristallin

Country Status (5)

Country Link
US (1) US20210313504A1 (fr)
EP (1) EP3932660A4 (fr)
JP (1) JP7253715B2 (fr)
CN (1) CN113015619B (fr)
WO (1) WO2020174733A1 (fr)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090295505A1 (en) * 2008-04-30 2009-12-03 Georgia Tech Research Corporation Phononic crystal wave structures
US8508370B1 (en) * 2009-02-27 2013-08-13 Sandia Corporation Synthetic thermoelectric materials comprising phononic crystals
US20170356806A1 (en) * 2016-06-13 2017-12-14 Panasonic Intellectual Property Management Co., Ltd. Infrared sensor

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2778761A (en) * 1952-01-09 1957-01-22 Frieder Laminated plastic assembly
JP2008147323A (ja) * 2006-12-08 2008-06-26 Murata Mfg Co Ltd 熱電変換モジュールおよびその製造方法
KR20140009182A (ko) * 2010-10-22 2014-01-22 캘리포니아 인스티튜트 오브 테크놀로지 낮은 열전도율을 위한 나노메쉬 포노닉 구조들 및 열전 에너지 변환 재료들
US20120282435A1 (en) * 2011-03-24 2012-11-08 University Of Massachusetts Nanostructured Silicon with Useful Thermoelectric Properties
TWM484671U (zh) * 2011-09-26 2014-08-21 Act Rx Technology Corp 利用聲子傳熱之散熱裝置
US9595653B2 (en) 2011-10-20 2017-03-14 California Institute Of Technology Phononic structures and related devices and methods
US9291297B2 (en) * 2012-12-19 2016-03-22 Elwha Llc Multi-layer phononic crystal thermal insulators
US9354354B2 (en) 2013-01-04 2016-05-31 Toyota Motor Engineering & Manufacturing North America, Inc. Loose packed phoxonic crystals and methods of formation
JP5964768B2 (ja) 2013-02-28 2016-08-03 日本電信電話株式会社 フォノニック導波路とその製造方法
WO2014163729A2 (fr) * 2013-03-21 2014-10-09 Marathe Radhika Structures de bande interdite acoustique pour l'intégration de résonateurs mems
US20170047499A1 (en) * 2013-04-07 2017-02-16 The Regents Of The University Of Colorado A Body Corporate Phononic Metamaterials
JP6859257B2 (ja) * 2014-10-09 2021-04-14 コンソルツィオ デルタ ティ リサーチ 内部ボイド及び熱伝導経路調整ビアを備える面外熱流束構成で動作する３ｄ集積化熱電発電機
WO2017057237A1 (fr) * 2015-10-02 2017-04-06 セントラル硝子株式会社 Matériau de conversion thermoélectrique et son procédé de production
WO2017141682A1 (fr) * 2016-02-16 2017-08-24 ローム株式会社 Élément de conversion thermo-optique et module de conversion thermoélectrique
JP6904732B2 (ja) * 2017-03-01 2021-07-21 積水化学工業株式会社 発泡樹脂積層体
CN107091686A (zh) * 2017-05-09 2017-08-25 国网江西省电力公司电力科学研究院 一种采用多层耦合声子晶体的声波谐振器
JP2018192534A (ja) 2017-05-12 2018-12-06 国立大学法人 東京大学 熱流方向性制御構造
WO2019013992A2 (fr) * 2017-06-29 2019-01-17 The Regents Of The University Of Colorado, A Body Corporate Matériaux phononiques de régulation d'un flux turbulent
JP7496501B2 (ja) * 2019-02-28 2024-06-07 パナソニックＩｐマネジメント株式会社 熱電変換素子及び熱電変換装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090295505A1 (en) * 2008-04-30 2009-12-03 Georgia Tech Research Corporation Phononic crystal wave structures
US8508370B1 (en) * 2009-02-27 2013-08-13 Sandia Corporation Synthetic thermoelectric materials comprising phononic crystals
US20170356806A1 (en) * 2016-06-13 2017-12-14 Panasonic Intellectual Property Management Co., Ltd. Infrared sensor

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2020174733A1 *

Also Published As

Publication number Publication date
JP7253715B2 (ja) 2023-04-07
WO2020174733A1 (fr) 2020-09-03
JPWO2020174733A1 (ja) 2021-12-23
US20210313504A1 (en) 2021-10-07
CN113015619A (zh) 2021-06-22
EP3932660A1 (fr) 2022-01-05
CN113015619B (zh) 2024-08-02

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Effective date: 20220315

RIC1 Information provided on ipc code assigned before grant

Ipc: G10K 11/162 20060101ALI20220309BHEP

Ipc: H01L 35/32 20060101ALI20220309BHEP

Ipc: H01L 29/32 20060101ALI20220309BHEP

Ipc: C01B 33/02 20060101ALI20220309BHEP

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