EP3881087A1 - Capteur de champ magnétique à faible bruit et largeur de bande élevée - Google Patents

Capteur de champ magnétique à faible bruit et largeur de bande élevée

Info

Publication number
EP3881087A1
EP3881087A1 EP19809166.2A EP19809166A EP3881087A1 EP 3881087 A1 EP3881087 A1 EP 3881087A1 EP 19809166 A EP19809166 A EP 19809166A EP 3881087 A1 EP3881087 A1 EP 3881087A1
Authority
EP
European Patent Office
Prior art keywords
magnetic field
field sensor
hall effect
sensor system
induction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP19809166.2A
Other languages
German (de)
English (en)
Inventor
Sasa Spasic
Radivoje Popovic
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Senis AG
Original Assignee
Senis AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Senis AG filed Critical Senis AG
Publication of EP3881087A1 publication Critical patent/EP3881087A1/fr
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/07—Hall effect devices
    • G01R33/072—Constructional adaptation of the sensor to specific applications
    • G01R33/075—Hall devices configured for spinning current measurements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0005—Geometrical arrangement of magnetic sensor elements; Apparatus combining different magnetic sensor types
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/07—Hall effect devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0023—Electronic aspects, e.g. circuits for stimulation, evaluation, control; Treating the measured signals; calibration
    • G01R33/0029—Treating the measured signals, e.g. removing offset or noise
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/028—Electrodynamic magnetometers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices

Definitions

  • the present invention relates to a magnetic field sensor according to claim 1.
  • Hall magnetic field sensors A sufficiently wide variety and high number of sensors for measuring a magnetic field, in particular Hall magnetic field sensors, are known from the prior art.
  • the basics of Hall magnetic field sensors are very detailed, for example in RS Popovic: “Hall-effect devices", Journal for Sensors and Actuators, Volume 17, Issues 1-2, 3 May 1989, Pages 39-53 or in RS Popovic "Hall Effect Devices “, 2nd Edition CRC Press Taylor & Francis Group, LLC 2003, ISBN: 978-1 -4200-3422-6.
  • the present invention is based on the disclosure of
  • US 6366076 B1 It describes a current sensor which, in addition to a low-pass filter, a low-frequency magnetic field sensor, e.g.
  • a Hall effect sensor and an inductive coil, such as a Rogowski coil, and a summing device combined to combine signals from the Hall effect sensor and the inductive coil.
  • an inductive coil such as a Rogowski coil
  • Arrangement of the sensor within a measurement circuit accompanying effect of this invention is a bandwidth-limited input measurement signal and a noise-superimposed output measurement signal.
  • Amplifier that amplifies the Hall voltage.
  • Noise of the noise spectrum of a Hall effect sensor system is available.
  • the currently known magnetic field sensors also include known silicon-integrated Hall effect sensors, which are also suitable for measuring magnetic fields. These have an insufficient measurement resolution and a too low frequency bandwidth for many modern applications.
  • Components can have a spectral density of the noise-equivalent magnetic induction (SNEMF-SD) of about 50 nT / VHz, such sensors can currently typically only have an SNEMF-SD> 100 nT / VHz.
  • SNEMF-SD noise-equivalent magnetic induction
  • Measurement of magnetic fields typically has a frequency bandwidth (BW) from DC to less than 200 kHz, although a frequency bandwidth from DC to several MHz would be required for a variety of applications.
  • BW frequency bandwidth
  • Hall magnetic field sensor Hall magnetic field sensor
  • the noise of the amplifier as such dominates in the noise budget of the modern silicon-integrated Hall magnetic field sensor system.
  • the bandwidth is limited because the amplifier has to work with a high gain due to the low Hall voltage and the cutoff frequency of the amplifier is low due to the limited gain-bandwidth product of the integrated amplifier.
  • both the input-related noise of an integrated amplifier and its amplification bandwidth product could be improved by increasing the area of the silicon chip occupied by the amplifier and by increasing the power consumption of the amplifier. But then such a silicon-integrated Hall magnetic field sensor would be too expensive and impractical to use.
  • An object of the invention is to overcome the disadvantages of the prior art, the performance of
  • Magnetic field sensor systems in particular Hall effect based, with regard to their measurement resolution of a magnetic field to be measured and the
  • a magnetic field sensor system comprises a first magnetic field sensor, one or more second ones
  • Magnetic field sensors and an amplifier Magnetic field sensors and an amplifier.
  • a magnetic field sensor system can also comprise a first magnetic field sensor and / or a magnetic field sensor subsystem and one or more second magnetic field sensors and an amplifier.
  • Magnetic field sensor which in combination with at least one other component, selected from the group consisting of Hall effect
  • Induction coils and a further amplifier is connected, and wherein the component is connected upstream of the further amplifier.
  • All magnetic field sensors are preferably dimensioned and designed such that they produce magnetic fields in the range up to 1 mT or up to 3 mT, preferably up to 10 mT or 30 mT and in particular up to 100 mT or 300 mT, preferably in a temperature environment of -40 ° C to +125 ° C.
  • Magnetic field sensor subsystem connected in series with the input of the amplifier so as to add the respective output signals to a common input signal of the amplifier.
  • the magnetic field sensors and / or the magnetic field sensor subsystem are preferably cascaded in series with the input of the amplifier, so as to combine the respective output signals
  • Magnetic field sensor system preferably a supply contact of the first magnetic field sensor connected to a voltage source, and all The remaining supply contacts of the magnetic field sensors are each connected to a constant current source or to a constant current sink.
  • the first magnetic field sensor and one or more of the second magnetic field sensors are preferably a component selected from the group consisting of Hall effect sensors and magnetoresistive sensors in FIG.
  • Output voltage over the entire frequency bandwidth is greater than one of the individual output voltages.
  • Magnetic field sensor system with a magnetic field sensor subsystem is a combination of at least one component, selected from the group consisting of Hall effect
  • Sensors magnetoresistive sensors in, preferably Wheatstone, bridge circuit, induction loops or induction coils, and a further amplifier, the component being connected upstream of the further amplifier.
  • the output contacts of the magnetic field sensor subsystem are preferably electrically coupled to the input contacts of the further amplifier.
  • a magnetic field sensor system and a magnetic field sensor subsystem have only one
  • Magnetic field sensor subsystem switchable contacts for operation by means of spinning current technology and chopper stabilization.
  • a magnetic field sensor system - in the presence of an induction loop or an induction coil as part of the magnetic field sensor system - additionally has an integrator or one
  • Low-pass filter to compensate for the frequency dependence of the voltage induced in the induction loop or in the induction coil.
  • a Hall effect sensor or a magnetoresistive sensor such as an AMR sensor or a GMR sensor
  • Magnetoresistive sensor is leading.
  • Magnetic field sensor system, the first magnetic field sensor and at least one of the second magnetic field sensors and the magnetic field sensor subsystem are designed as an integrated circuit.
  • the invention is in one
  • Magnetic field sensor system the first magnetic field sensor and at least one of the second magnetic field sensors or the magnetic field sensor subsystem are designed as an integrated circuit.
  • Magnetic field sensor system the first magnetic field sensor or at least one of the second magnetic field sensors and the magnetic field sensor subsystem are designed as an integrated circuit.
  • Magnetic field sensor system the first magnetic field sensor or at least one of the second magnetic field sensors or the magnetic field sensor subsystem is designed as an integrated circuit.
  • the magnetic field sensor system is preferably designed as an integrated circuit.
  • the integrated circuit is preferably with an induction loop, preferably externally connected, or a preferably externally connected,
  • Induction coil connected in series to the
  • the integrated circuit of a magnetic field sensor system comprises at least one Hall effect sensor for each spatial direction component of a magnetic field vector
  • Induction loop or the induction coil or a combination of these at least partially surround the integrated circuit in this way spatially that all spatial direction components of the magnetic field vector can be detected.
  • the integrated circuit of a magnetic field sensor system comprises at least one Hall effect sensor and an induction loop or an induction coil for each
  • Spatial direction component of a magnetic field sector so that one, two or three spatial direction components of the magnetic field vector can be detected.
  • Hall effect sensors are
  • the value of the SNEMF-SD of a magnetic field sensor or a magnetic field sensor subsystem is close to that of a commercially available silicon-integrated Hall effect sensor such as, for example, of the type Allegro A1324, A1325 or A1326, of the type AKM EQ-430L, EQ-431 L, EQ-432L or EQ-433L or of the type LEM FHS Minisense, preferably in the range of 50 (+/- max 10) nT / VHz.
  • the frequency bandwidth (BW) of a magnetic field sensor or a magnetic field sensor subsystem is in the range from direct current (DC) or 0 Hz to at least 1 MHz or 2 MHz, preferably to 3 MHz and in particular to max. 5 MHz.
  • Magnetic field sensor system one Hall effect sensor and one in series switched inductive component, both the output signal of the Hall effect sensor and the output signal of the inductive
  • Component are amplified by the same factor, so that a
  • Magnetic field measuring range from 5 mT to 3 T in a low
  • Frequency range with a bandwidth from 0 Hz (DC) to 1 kHz with a measurement resolution of 500 nT, ie with a factor of 10 4 of the smallest
  • Measuring range of 5mT measuring range otherwise can be covered with a factor 10 5 of the measuring range.
  • Magnetic field sensor system a Hall effect sensor and an inductive component connected in series, the output signal of the Hall effect sensor being amplified more than the output signal of the inductive component, so that a magnetic field measuring range from 5 mT to 300 mT in a medium frequency range with a bandwidth from 0 Hz (DC) to 200 kHz with a measurement resolution of 5 mT, ie with a factor 10 3 of the smallest measuring range of 5 mT measuring range, otherwise with a factor 10 4 of the measuring range.
  • DC 0 Hz
  • Magnetic field sensor system a Hall effect sensor and an inductive component connected in series, the output signal of the Hall effect sensor being amplified more than the output signal of the inductive component, so that a magnetic field measuring range from 3 mT to 30 mT in a high frequency range with a bandwidth from 0 Hz (DC) to 2 MHz with a measuring resolution of 15 mT, ie with a factor 5x10 2 of the smallest measuring range of 3mT measuring range, otherwise with a factor 10 3 of the measuring range.
  • FIG. 1 shows a block diagram of a typical Hall magnetic field sensor subsystem known from the prior art
  • FIG. 2 shows a block diagram of a preferred magnetic field sensor system with three Hall effect sensors connected in series;
  • FIG. 3 shows a block diagram of a preferred magnetic field sensor system with a Hall effect sensor connected in series with an induction loop;
  • FIG. 4 shows a block diagram of a preferred magnetic field sensor system with two Hall effect sensors connected in series with an induction loop
  • FIG. 5 shows a block diagram of a preferred magnetic field sensor system
  • FIG. 6 is a block diagram of another preferred embodiment
  • FIG. 7 shows a block diagram of a preferred magnetic field sensor system comprising a Hall magnetic field sensor subsystem
  • FIG. 8 shows a schematic illustration of a preferred embodiment of an induction coil manufactured in planar technology
  • FIG. 9 shows a schematic illustration of a preferred embodiment of a chip on a base plate
  • FIGS. 10a to 10c each show a schematic illustration of a preferred embodiment comprising a sandwich-like arrangement of a chip
  • Figure 11 is a schematic representation of a preferred embodiment of one with its turns perpendicular to the surface of a chip
  • FIGS. 12a to 12c each show a schematic representation of a preferred embodiment of an indicated coil wound around a chip
  • FIG. 13 shows a schematic representation of a preferred embodiment of a chip including an air coil arrangement
  • Embodiment of a chip including an air coil arrangement Embodiment of a chip including an air coil arrangement.
  • FIG. 1 shows a block diagram of a typical Hall magnetic field sensor subsystem 500 known from the prior art in the form of an integrated circuit (IHMFS - Integrated Hall Magnetic Field Sensor) with a Hall effect sensor 100, which uses the switch in the spinning current method
  • IHMFS integrated circuit
  • Hall effect sensor 100 which uses the switch in the spinning current method
  • the Hall effect sensor 100 is, just as also shown in FIGS. 5 and 6, a Hall effect sensor element with associated conventional peripheral circuit technology.
  • Switchable contacts implemented on both sides at inputs and outputs of the Hall effect sensor 100 convert the Hall voltage VH into one
  • Frequency 702 to control the switches 110, 111, 112 and 210 by the control unit 701 around, while the offset and
  • the switches 210 between the amplifier 40 and the low pass filter 200 demodulate (or rectify) the amplified Hall voltage VH so that the Hall voltage VH returns to its original baseband. At the same time, the switches 210 convert the amplified offset and / or
  • the low-pass filter 40 filters disturbing ones
  • Output voltage Vout between the two output terminals of the low-pass filter 200 which corresponds to the amplified Hall voltage VH and, as a result, is free of offset and low-frequency noise.
  • the switches 111 pull the Hall effect sensor 100 to the potential v via the current sink 61.
  • the input-related noise voltage Van of the integrated amplifier 40 has, including the parasitic noise of the spinning current
  • Figure 2 shows a block diagram of an embodiment of a
  • the Hall effect sensors 10, 20, 30 are, as also shown in FIGS. 3 and 4, pure sensor elements, usually also referred to as Hall elements. Hall effect sensor 10 is at terminal 11 by the one on the potential v +
  • the Hall effect sensor 20 is operated at terminal 21 by the current source 50b connected to the potential v + and by means of a reference voltage Vref applied to terminal 23.
  • the Hall effect sensor 30 is connected to terminal 31 by the one on the
  • current sink 60c operated at potential v.
  • the current source 50a, 50b, 50c and the two current sinks 60a and 60c in conjunction with the applied reference voltage Vref that enables the series connection of the Hall effect sensors 10, 20, 30 and the resultant result
  • FIG. 3 shows a block diagram of a magnetic field sensor system, comprising a Hall effect sensor 10 with connecting terminals 11, 12, 13, 14, the Hall voltage VH being present at the terminals 11 and 13, and one
  • Induction loop 150 an amplifier 40 and an optional
  • Low pass filter 200 all of which are connected in series.
  • the Hall effect sensor 10 and the induction loop 150 are interconnected such that the phase of the voltage VL induced in the induction loop 150, preferably by TT / 2, leads the phase of the Hall voltage VH. Decisive for this is the direction of flow of the bias current lh of the Hall effect sensor 10, which can be seen in FIG. 3.
  • the voltage VL which is proportional to the time derivative of the magnetic field dB / dT, is proportional to the frequency f of the magnetic field B.
  • the low-pass filter 200 of the 1st order preferably has one
  • A Nc x Aa, (3) where Nc is the number of turns of coil 160, and A a is
  • Cutoff frequency of the low pass filter 200 as follows
  • the maximum frequency f m of the magnetic field B can be much higher than, for example, the cut-off frequency f c of the low-pass filter 200, namely fm> (10-100) * f c (10)
  • the output voltage Vout is present at the output terminals of this series connection.
  • the series circuit is supplied with electrical power via the potentials v + and v- in connection with the current sink 61.
  • the orientation of the sensor 10 to the magnetic field is also shown.
  • FIG. 4 shows a block diagram of a preferred magnetic field sensor system with two Hall effect sensors 10 and 20 and an induction coil 160, which are connected in series by the three at the respective terminals 24 and 14 of the Hall effect sensors 10 and 20 and the one in between
  • the Hall effect sensor 10 is operated at terminal 11 by the current source 50a, which is at the potential v +, and at terminal 13 by the current sink 60a, which is at the potential v +.
  • the Hall effect sensor 20 is connected to terminal 21 by the one at the potential v + Current source 50c and operated at terminal 23 by the current sink 60c, which is on the other hand analogous to FIG.
  • Magnetic field sensor system, the coil 160 and the Hall effect sensors 10, 20 have a coordinated geometric and electrical
  • the reference voltage Vref defines a suitable common mode voltage at the input of the amplifier 40.
  • preferred embodiments of the magnetic field sensor system shown in FIG. 4 include a low-pass filter 200 on the output side.
  • a preferred embodiment has one
  • the input-related noise voltage Van of the integrated amplifier 40 including the parasitic noise of the spinning current current operation together with a chopper stabilization, has a value of 10 nV / V Hz with a gain of 100.
  • the noise is up to a factor 8 lower than in the prior art according to FIG. 1.
  • Figure 5 shows a block diagram of a preferred embodiment
  • Magnetic field sensor system comprising a Hall effect sensor 100 and an induction loop 150, the output terminals of these devices in Series are connected as shown in Figure 3.
  • the Hall effect sensor 100 is operated using the spinning current method and the chopper is stabilized.
  • the switches 1 10, 1 1 1 and 1 12 on both sides at inputs and outputs of the Hall effect sensor 100 convert the voltage drop VH into an AC voltage with a voltage predetermined by the clock signal 700
  • Frequency 702 to control the switches 1 10, 1 1 1 and 1 12 by the control unit 701 um, while the offset and
  • the switch 1 12 connects the drop voltage VH in series to the induction loop 150. This then added to the inputs of the switch 1 13
  • Output voltage VH + VL is connected in series to amplifier 40 for amplification.
  • the switches 210 between the amplifier 40 and the optional low pass filter 200 demodulate (or rectify) the boosted fall voltage VH SO to return to its original baseband.
  • the switches 210 convert the amplified offset and / or low frequency noise of the Hall effect sensor 100 and the amplified offset and low frequency noise of the amplifier 40 into one
  • the low-pass filter 40 filters disturbing ones
  • Output voltage Vout between the two output terminals of the optional low-pass filter 200 or the output signal OUT is present between the output terminals of a further component 300 connected in series, preferably an output amplifier or an analog-digital converter.
  • VH signals are free of offset and
  • FIG. 5 shows a block diagram of another preferred embodiment of the magnetic field sensor system
  • Magnetic field sensor system with a Flall magnetic field sensor subsystem 500 from FIG. 1, an induction loop 150 with an output voltage VL being connected in series between the demodulation switches 1 12 and the optional low-pass filter 200 indicated by a broken line.
  • the amplified Fall voltage VH is present according to equation (1).
  • the sufficient cut-off frequency f c of the low-pass filter 200 is given by instead of equation (2)
  • Equations (2) and (12) with each other, it follows that the repositioning of the induction loop 150 from the input of the amplifier 40 to the output of the amplifier 40 from an increase in the cutoff frequency f c
  • Low pass filter 200 goes by the factor G with G> 1.
  • Induction loop 150 no longer by equations (7) or (8), but fm * Bm ⁇ Vm * fc / (Sh) (13) or fm * Bm ⁇ Vm / (2 * p * A) (14)
  • the product of the maximum frequency f m and the maximum amplitude B m consequently increases by the factor G with G> 1.
  • Induction loop 150 are amplified by the same factor G, the magnetic field sensor system is particularly suitable for the low-frequency range from DC to 1 kHz.
  • the magnetic field sensor system is particularly suitable for the broadband
  • FIG. 7 shows a block diagram of a preferred magnetic field sensor system comprising a Hall magnetic field sensor subsystem 500 with an integrated output amplifier 201 and a downstream non-integrated induction coil 160 to which the output voltage VH of the Hall magnetic field sensor subsystem 500 is present as an input voltage, an RC element as a low-pass filter 200 of the 1st order and an optional amplifier 40 shown in broken lines, all of which are connected in series.
  • the embodiment shown is particularly suitable for high-frequency due to the variably configurable external induction coil 160
  • Both the cut-off frequency f c and the product f m * B m are dependent on the effective effective area of the induction coil and can therefore, as also shown in FIGS. 8 to 14, be shaped by the shape and design and the number of turns of the coils.
  • a preferred embodiment has one
  • Magnetic field sensor systems an IHMFS with a bandwidth BW from DC to a maximum of 100 kHz.
  • the IHMFS has a sensitivity of 100 V / T. It typically comprises the series circuit shown in FIG. 7, consisting of an IHMFS according to one of FIGS. 1 to 6 and the three Hall effect sensors 10, 20, 30, as well as the external coil 160 and the low-pass filter 200.
  • the input-related noise voltage Van of the amplifier 40 which is part of the IHMFS and already integrated therein, including the parasitic noise of the spinning current current operation together with a chopper stabilization, has a value of 10 nV / VHz at one
  • FIG. 8 shows a schematic representation of an embodiment of an induction coil 160 made in planar technology, which is preferably integrated on a chip with other components of the magnetic field sensor system.
  • the number of turns can be freely selected depending on the application via the selector switch 1 14 with the three switchable turns shown schematically.
  • the area A depending on the number of turns
  • Induction coil 160 can be varied application-related far beyond these three windings, which are shown schematically.
  • FIG. 9 shows a schematic illustration of an embodiment of a chip 600 on a base plate 170 surrounded by a parallel to the
  • Chip surface 160 arranged on the bottom plate 170 coil arrangement, wherein the windings run around the chip 600.
  • the coil 160 has the connections 171, 172 in the form of bond pads.
  • the chip 600 comprises a magnetic field sensor subsystem.
  • 10a to 10c show schematic representations of preferred embodiments comprising a sandwich-like arrangement of the chip 600 between in each case between a cover plate 170 and a base plate 170 '.
  • the two plates 170, 170 'each have a coil 160, 160' with respective connections 171, 172 and 171 ', 172' in the form of bond pads on the opposite surfaces adjacent to the chip 600.
  • FIG. 10a the two plates 170, 170 'each have a coil 160, 160' with respective connections 171, 172 and 171 ', 172' in the form of bond pads on the opposite surfaces adjacent to the chip 600.
  • the coil 160 with the two coil structures 161, 162 is spatially such that a spatial distance is introduced between the two coil structures 161, 162 with their respective turns, which corresponds to at least 10% of the width of one of the two coil structures 161, 162, so that the turns of the two Coil structures 161, 162 integrated on and / or in the cover plate 170 and in the base plate 170 ', circulate around the chip 600.
  • Coil structures 161, 162 can be electrically connected to one another in such a way that they act as a coil 160 or act independently of one another as two individual coils 160.
  • the turns of the coil 160 run around the chip 600 without a spacing as shown in FIG. 10b between the two coil structures 161, 162.
  • FIG. 11 a shows a schematic illustration of an embodiment of two with their windings perpendicular to the surface of the chip 600 on a substrate comprising side walls 163, 164 and base plate 165
  • coil structures 161, 162 which was produced by folding or bending the, preferably from so-called flexible flexprint printed circuit board material or rigid flexprint printed circuit board material or any rigid or flexible board material, preferably u-shaped.
  • the coil structures 161, 162 are preferably manufactured using planar technology. Layable turns of wire are also possible.
  • the two coil structures 161, 162 can be electrically interconnected to form a coil 160 or to two coils 160 which act independently of one another.
  • FIGS. 11 b and 11 c show the embodiment shown in FIG. 11 a, with coil structures 161, 162 applied to the side walls 163, 164, respectively.
  • the line of sight and transparency line in FIG. 11 c show that the coil structures 161, 162 together with the Base plate 165 each surround a chip 600 in a U-shape, since they also partially extend into and / or onto the base plate 165.
  • the two coil structures 161, 162 can be electrically interconnected to form a coil 160 or to two coils 160 which act independently of one another.
  • 12a to 12c each show a schematic illustration of an indicated coil 160 wound around the chip 600 in three different configurations, which correspond to the three different orthogonal scanning directions of the magnetic field, namely the spatial direction components B x , B y , B z .
  • Figure 13 shows a schematic representation of a preferred embodiment
  • Figure 14 shows a schematic representation of a preferred embodiment

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Magnetic Variables (AREA)
  • Hall/Mr Elements (AREA)

Abstract

L'invention concerne un système de capteurs de champ magnétique comprenant un premier capteur de champ magnétique, un ou plusieurs deuxièmes capteurs de champ magnétique et un amplificateur, tous les capteurs de champ magnétique étant montés en série de sorte que les signaux de sortie respectifs puissent être additionnés pour produire un signal d'entrée commun de l'amplificateur.
EP19809166.2A 2018-11-14 2019-11-14 Capteur de champ magnétique à faible bruit et largeur de bande élevée Pending EP3881087A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102018128469.1A DE102018128469B4 (de) 2018-11-14 2018-11-14 Magnetfeldsensor mit geringem Rauschen und hoher Bandbreite
PCT/IB2019/059785 WO2020100078A1 (fr) 2018-11-14 2019-11-14 Capteur de champ magnétique à faible bruit et largeur de bande élevée

Publications (1)

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EP3881087A1 true EP3881087A1 (fr) 2021-09-22

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US (1) US11614503B2 (fr)
EP (1) EP3881087A1 (fr)
KR (1) KR20210091268A (fr)
CN (1) CN113227813A (fr)
DE (1) DE102018128469B4 (fr)
WO (1) WO2020100078A1 (fr)

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CN116500330B (zh) * 2023-06-27 2023-09-08 中国科学院合肥物质科学研究院 一种用于超导变压器二次回路电流的检测装置

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US11614503B2 (en) 2023-03-28
KR20210091268A (ko) 2021-07-21
DE102018128469B4 (de) 2020-11-12
DE102018128469A1 (de) 2020-05-14
US20220128635A1 (en) 2022-04-28
WO2020100078A1 (fr) 2020-05-22
CN113227813A (zh) 2021-08-06

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