EP3769160A1 - Method for manufacturing a silicon hairspring - Google Patents
Method for manufacturing a silicon hairspringInfo
- Publication number
- EP3769160A1 EP3769160A1 EP19712197.3A EP19712197A EP3769160A1 EP 3769160 A1 EP3769160 A1 EP 3769160A1 EP 19712197 A EP19712197 A EP 19712197A EP 3769160 A1 EP3769160 A1 EP 3769160A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- hairspring
- silicon
- layer
- etching
- stiffness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G04—HOROLOGY
- G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
- G04B17/00—Mechanisms for stabilising frequency
- G04B17/04—Oscillators acting by spring tension
- G04B17/06—Oscillators with hairsprings, e.g. balance
- G04B17/066—Manufacture of the spiral spring
-
- G—PHYSICS
- G04—HOROLOGY
- G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
- G04B17/00—Mechanisms for stabilising frequency
- G04B17/20—Compensation of mechanisms for stabilising frequency
- G04B17/22—Compensation of mechanisms for stabilising frequency for the effect of variations of temperature
- G04B17/227—Compensation of mechanisms for stabilising frequency for the effect of variations of temperature composition and manufacture of the material used
-
- G—PHYSICS
- G04—HOROLOGY
- G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
- G04B17/00—Mechanisms for stabilising frequency
- G04B17/20—Compensation of mechanisms for stabilising frequency
- G04B17/26—Compensation of mechanisms for stabilising frequency for the effect of variations of the impulses
Definitions
- the invention relates to a method of manufacturing a silicon spiral and, more specifically, such a spiral used as a compensating spring cooperating with a known balance of inertia to form a resonator having a predetermined frequency.
- the step of etching several spirals in a silicon wafer offers a non-negligible geometrical dispersion between the spirals of the same wafer and a greater dispersion between spirals of two wafers etched at different times.
- the stiffness of each spiral engraved with the same engraving pattern is variable by creating significant manufacturing dispersions.
- the object of the present invention is to overcome all or part of the disadvantages mentioned above by proposing a method of manufacturing a spiral whose dimensions are sufficiently precise not to require retouching.
- the invention relates to a method for manufacturing a silicon spiral having a known final stiffness comprising the following steps: a) providing an SOI wafer comprising successively a so-called "handle” silicon layer, a silicon oxide bonding layer, and a so-called “device” silicon layer;
- a compensating balance spring is thus obtained which, advantageously according to the invention, comprises a silicon-based core and a coating based on silicon oxide.
- the compensating hairspring thus has a very high dimensional accuracy and, incidentally, a thermal compensation of the whole resonator very fine.
- step e) is carried out using a chemical etching
- step g) comprises the following phases:
- step e several spirals are formed in the same wafer in dimensions greater than the dimensions necessary to obtain several spirals of an initial stiffness or several spirals of several initial stiffnesses;
- step h) comprises the following phases:
- step h1) measuring the frequency of an assembly comprising the hairspring formed during step e) coupled with a balance with a known inertia and deduce from the measured frequency, the initial stiffness of the hairspring formed; h2) calculating, from the determination of the initial stiffness of the hairspring, the turn dimensions to obtain to obtain said hairspring of a final stiffness;
- step k the method further comprises the following step:
- FIG. 1 illustrates a wafer with a multitude of spirals obtained according to a method according to the invention
- FIG. 2a and 2b respectively show a perspective view and a sectional view of a spiral obtained by a method according to the invention
- FIG. 3 illustrates the different steps of a method according to the invention.
- the invention relates to a compensating hairspring 1 visible in Figure 2a and its manufacturing method to ensure a very high dimensional accuracy of the hairspring and, incidentally, to ensure a more precise stiffness of said hairspring.
- the compensating spiral 1 is formed based on a material, optionally coated with a thermal compensation layer, and intended to cooperate with a known inertia balance.
- the silicon-based material used as a compensating spiral may be monocrystalline silicon whatever its crystalline orientation, doped monocrystalline silicon whatever its crystalline orientation, amorphous silicon, porous silicon, polycrystalline silicon, silicon nitride, silicon carbide, quartz regardless of its crystalline orientation or the oxide of silicon.
- monocrystalline silicon whatever its crystalline orientation
- doped monocrystalline silicon whatever its crystalline orientation
- amorphous silicon porous silicon
- polycrystalline silicon silicon
- silicon nitride silicon carbide
- quartz regardless of its crystalline orientation or the oxide of silicon.
- other materials can be envisioned as a glass, a ceramic, a cermet, a metal or a metal alloy.
- the explanation below will be focused on a silicon-based material.
- Each type of material may be surface-modified or layer-coated to thermally compensate for the base material as explained above.
- the invention relates to a method of manufacturing a silicon spiral 1 visible in Figure 3.
- the process steps represent only a median section along line A of a single spiral silicon 1 formed in the wafer 10 of Figure 1, the number of turns 3 spiral 1 being reduced to facilitate the reading of the figures.
- the method comprises, as illustrated in FIG. 3, a first step a) that consists in providing SOI wafers 10, that is to say composed of two layers of silicon 11 and 12, which are bonded together. to each other by a silicon oxide layer 13.
- SOI wafers 10 that is to say composed of two layers of silicon 11 and 12, which are bonded together. to each other by a silicon oxide layer 13.
- Each of these three layers has one or more specific roles.
- the lower layer of silicon 12, called “handle”, serves essentially as mechanical support, so as to perform the process on a sufficiently rigid assembly (which the reduced thickness of the "device” is not able to guarantee) . It is also formed of a monocrystalline silicon plate, generally of a similar orientation to the "device" layer.
- the oxide layer 13 intimately bonds the two silicon layers 11 and 12. In addition, it will also serve as a stop layer for subsequent operations.
- the following step b) consists in growing on the surface of the wafer (s) 10 a layer of silicon oxide, exposing the wafer or wafers to an oxidizing atmosphere at high temperature.
- the layer varies according to the thickness of the "device" to be structured. It is typically between 1 and 4pm.
- Step c) of the process will make it possible to define, for example in a positive resin, the patterns that it is desired to carry out subsequently in the wafer 10 in silicon.
- This step includes the following operations:
- the resin is deposited, for example by spinning, in a very thin layer of thickness between 1 and 2 ⁇ m,
- this resin once dried, this resin, with photolithographic properties, is exposed through a photolithographic mask (transparent plate covered with a layer of chromium, itself representing the desired patterns) using a light source;
- the exposed areas of the resin are then removed using a solvent, revealing the oxide layer.
- the zones always covered with resin define the zones that one does not wish to be attacked in the subsequent operation of deep reactive ion etching (also known by the abbreviation "D.R.I.E.") of silicon.
- step d the areas exposed or on the contrary coated with resin are then exploited.
- a first etching process makes it possible to transfer the patterns defined in the resin in the preceding steps to the previously grown silicon oxide.
- silicon oxide is structured by a plasma dry etching, directional and reproducing the quality of the flanks of the resin serving as a mask for this operation.
- the silicon surface of the upper layer 11 is then exposed and ready for a DRIE etching.
- the resin can be preserved or not depending on whether it is desired to use the resin as a mask during the DRIE etching.
- Silicon exposed and unprotected by silicon oxide is etched in a direction perpendicular to the surface of the wafer (Bosch® DRIE anisotropic etching).
- the patterns formed first in the resin, then in the silicon oxide, are "projected” into the thickness of the "device” layer 11.
- the etching opens on the silicon oxide layer 13 bonding the two silicon layers 11 and 12, the etching stops. Indeed, like the silicon oxide serving as a mask during the Bosch® process and resistant to etching itself, the buried oxide layer 13, of the same nature, also resists therein.
- the "device" silicon layer 11 is then structured throughout its thickness by the defined patterns representing the components to be manufactured, now revealed by this DRIE etching, namely a spiral 1 comprising turns 3 and a ferrule 2.
- the components remain integral with the "handle" layer 12 to which they are bonded by the buried silicon oxide layer 13.
- step e) could equally well be obtained by chemical etching in the same silicon-based material.
- step e several spirals can be formed in the same wafer in dimensions larger than the dimensions necessary to obtain several spirals of an initial stiffness or several spirals of several initial stiffnesses.
- step e) the residues of the passivation resin resulting from the Bosch® process are then removed, and the oxide having served as a mask for the DRIE etching is removed in solution. aqueous hydrofluoric acid.
- a layer of silicon oxide is again grown on the surface of the silicon (around the "device” 11 and “handle” layers 12), this oxide layer will serve as a protection for the components during the operation to release them by separating them from the "handle” layer 12.
- a second photolithography operation similar to the first carried out in step c) is carried out on the back of the wafer 10 (hence on the "handle" layer 12). To do this the wafer 10 is returned, the resin is deposited therein and then exposed through a mask.
- the area of the exposed resin is then removed by means of a solvent, revealing the previously formed oxide layer, which is then structured via dry etching.
- step g) complete etching of the exposed "handle" layer 12 is carried out using an aqueous solution, based on potassium hydroxide (KOH), tetramethylammonium hydroxide, or by DRIE engraving.
- KOH potassium hydroxide
- tetramethylammonium hydroxide or by DRIE engraving.
- step g1) to completely release the components the various silicon oxide layers are then etched by wet etching with a hydrofluoric acid solution.
- the spirals 1 formed are held at a frame via at least one fastener, the frame and the fasteners having been formed at the same time as the spirals during the step e) of etching DRIE.
- the method comprises a step h) intended to determine the initial stiffness of the hairspring. Such a step h) can be carried out directly on the hairspring still attached to the wafer 10 or on the whole or on a sample of the spirals still attached to the wafer or on a spiral detached from the wafer.
- step h) comprises a first phase h1) intended to measure the frequency of an assembly comprising the hairspring coupled with a balance having a known inertia and then to deduce the initial stiffness of the hairspring.
- the oscillation frequency of the sprung balance assembly makes it possible to determine the angular stiffness of the spiral tested, and thereby the precise dimensions of the turn section 3 of the spiral spring 1 (its thickness mainly, the height being known , since this is the thickness of the "device" layer of the base substrate).
- Such a measurement phase can in particular be dynamic and carried out according to the teachings of document EP 2 423 764, incorporated by reference into the present application.
- a static method carried out according to the teachings of document EP 2 423 764, can also be implemented to determine the stiffness of the hairspring.
- step h) may also consist of a determination of the average initial stiffness of a representative sample or the set of spirals formed on the same wafer.
- the turn dimensions to be obtained are calculated to obtain the overall dimensions necessary to obtain said hairspring of a desired stiffness (or final stiffness).
- the process continues with a sequence for removing the excess material from the hairspring to the necessary dimensions to obtain the hairspring of final stiffness.
- Step i) is to oxidize the hairspring in order to convert said thickness of silicon-based material to silicon dioxide and thereby form an oxidized hairspring.
- a phase may, for example, be obtained by thermal oxidation.
- thermal oxidation can, for example, be carried out between 800 and 1200 ° C under an oxidizing atmosphere using water vapor or oxygen gas to form silicon oxide on the spiral.
- the silicon oxide grows regularly, the oxidation rate and the resulting thickness are perfectly controlled by those skilled in the art which ensures uniformity of the oxide layer.
- Step i) is continued with a step j) intended to remove the oxide of the spiral making it possible to obtain a silicon-based spiral with the overall dimensions necessary to obtain the final stiffness.
- a step is obtained by a chemical etching.
- Such chemical etching can be carried out, for example, by means of a solution based on hydrofluoric acid for removing silicon oxide from the spiral.
- Steps i) and j) make it possible to bring the dimensions of the turn 3 to intermediate values determined during the calculation step h2).
- step k) consists in oxidizing the hairspring again to coat it with a layer of silicon dioxide in order to form a hairspring 1 which is thermally compensated.
- a step may, for example, be obtained by thermal oxidation.
- thermal oxidation can, for example, be carried out between 800 and 1200 ° C under an oxidizing atmosphere using water vapor or oxygen gas to form silicon oxide on the spiral.
- the compensator spring 1 is thus obtained as illustrated in FIGS. 2a and 2b, which, advantageously according to the invention, comprises a core 30 based on silicon and a coating 31 based on silicon oxide.
- This second oxidation makes it possible to adjust both the mechanical (stiffness) and thermal (temperature compensation) performance of the future hairspring 1.
- the dimensions of the turn 3 satisfy the requirement of angular stiffness sought and the layer silicon oxide increases the stiffness according to the dimensional change of the balance / hairspring depending on the temperature.
- a hairspring 1 comprising in particular:
- the method may also comprise a metallization step I). Indeed, the growth of a non-negligible layer of silicon oxide on the surface of the spirals does not bring only advantages. This layer traps and fixes electrical charges, which will lead to phenomena of electrostatic bonding either with the spiral environment, or turns between them.
- This layer also has hydrophilic properties, and it is known that the absorption of moisture causes a drift of the stiffness of the hairspring and therefore the running of the watch. Also, a thin layer of a metal such as chromium, titanium, tantalum or one of their alloys renders both the surface of the hairspring 1 waterproof and conductive, eliminating the effects mentioned above. Such a layer can be obtained according to the teachings of EP 2 920 653, incorporated by reference into the present application.
- This thin layer is chosen as thin as possible so as not to disturb the performance adjusted above. Adequate heat treatment ensures good adhesion of the thin layer.
- the method may also comprise step I) intended to separate the spirals 1 of the wafer 10 and to assemble them with a known balance of inertia to form a balance-spring resonator which is compensated thermally or otherwise, it is that is, whose frequency is sensitive or not to temperature variations.
- the balance even if it comprises a predefined construction inertia, may comprise movable weights to provide a setting parameter before or after the sale of the timepiece.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Metallurgy (AREA)
- Micromachines (AREA)
- Cosmetics (AREA)
- Springs (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP18163053.4A EP3543796A1 (en) | 2018-03-21 | 2018-03-21 | Method for manufacturing a silicon hairspring |
PCT/EP2019/057160 WO2019180177A1 (en) | 2018-03-21 | 2019-03-21 | Method for manufacturing a silicon hairspring |
Publications (1)
Publication Number | Publication Date |
---|---|
EP3769160A1 true EP3769160A1 (en) | 2021-01-27 |
Family
ID=61911349
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP18163053.4A Withdrawn EP3543796A1 (en) | 2018-03-21 | 2018-03-21 | Method for manufacturing a silicon hairspring |
EP19712197.3A Pending EP3769160A1 (en) | 2018-03-21 | 2019-03-21 | Method for manufacturing a silicon hairspring |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP18163053.4A Withdrawn EP3543796A1 (en) | 2018-03-21 | 2018-03-21 | Method for manufacturing a silicon hairspring |
Country Status (6)
Country | Link |
---|---|
US (1) | US11300926B2 (en) |
EP (2) | EP3543796A1 (en) |
JP (1) | JP7100711B2 (en) |
KR (1) | KR102448668B1 (en) |
CN (1) | CN111819501A (en) |
WO (1) | WO2019180177A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021053501A1 (en) | 2019-09-16 | 2021-03-25 | Richemont International Sa | Method for manufacturing a plurality of resonators in a wafer |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH716603A1 (en) * | 2019-09-16 | 2021-03-31 | Sigatec Sa | Process for manufacturing watch hairsprings. |
EP3882714A1 (en) * | 2020-03-19 | 2021-09-22 | Patek Philippe SA Genève | Method for manufacturing a silicon clock component |
EP3907565A1 (en) | 2020-05-07 | 2021-11-10 | Patek Philippe SA Genève | Method for manufacturing a silicon timepiece component |
EP4312084A1 (en) | 2022-07-26 | 2024-01-31 | Nivarox-FAR S.A. | Method for manufacturing a silicon hairspring |
EP4332686A1 (en) | 2022-08-30 | 2024-03-06 | ETA SA Manufacture Horlogère Suisse | Hairspring for balance-hairspring assembly of a clock movement |
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CH447042A (en) * | 1965-09-24 | 1968-03-15 | Tissot Horlogerie | Fixing device for the outer end of a regulating balance spring for a timepiece |
JPH04318491A (en) * | 1991-04-17 | 1992-11-10 | Seiko Epson Corp | Facing part for watch |
EP1422436B1 (en) | 2002-11-25 | 2005-10-26 | CSEM Centre Suisse d'Electronique et de Microtechnique SA | Spiral watch spring and its method of production |
CN101274740A (en) * | 2007-03-28 | 2008-10-01 | 中国科学院微电子研究所 | Method for manufacturing thermal shear stress sensor based on silicon dioxide characteristics |
EP2105807B1 (en) * | 2008-03-28 | 2015-12-02 | Montres Breguet SA | Monobloc elevated curve spiral and method for manufacturing same |
EP2151722B8 (en) * | 2008-07-29 | 2021-03-31 | Rolex Sa | Hairspring for balance-spring resonator |
CH702151A1 (en) * | 2009-11-10 | 2011-05-13 | Cartier Creation Studio Sa | Pieces of method for producing micromechanical including glass ceramic. |
EP2423764B1 (en) | 2010-08-31 | 2013-03-27 | Rolex S.A. | Device for measuring the torque of a hairspring |
CN102800699B (en) * | 2011-05-25 | 2015-04-29 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and forming method thereof |
KR101846802B1 (en) | 2012-11-16 | 2018-04-06 | 니바록스-파 에스.에이. | Compensating balance spring for a thermally compensated sprung balance resonator |
EP2781968A1 (en) | 2013-03-19 | 2014-09-24 | Nivarox-FAR S.A. | Resonator that is less sensitive to climate variations |
CN104253042B (en) * | 2013-06-28 | 2017-07-07 | 无锡华润上华半导体有限公司 | A kind of manufacture method of igbt |
JP6345493B2 (en) * | 2014-02-25 | 2018-06-20 | シチズン時計株式会社 | Hairspring |
JP6486697B2 (en) * | 2014-02-26 | 2019-03-20 | シチズン時計株式会社 | Hairspring manufacturing method and hairspring |
EP2952972B1 (en) * | 2014-06-03 | 2017-01-25 | The Swatch Group Research and Development Ltd. | Method for manufacturing a composite compensator spiral |
CN107003641B (en) | 2014-12-12 | 2021-02-19 | 西铁城时计株式会社 | Timepiece component and method of manufacturing timepiece component |
JP2016133495A (en) | 2015-01-22 | 2016-07-25 | シチズンホールディングス株式会社 | Method of manufacturing timepiece component and timepiece component |
US10042964B2 (en) | 2015-03-02 | 2018-08-07 | General Electric Company | Method of evaluating a part |
CN104737989B (en) | 2015-03-06 | 2017-06-16 | 浙江省农业科学院 | A kind of method of utilization fly maggot scale treatment fermentation filter residue and animal dung mixture |
JP2016173355A (en) | 2015-03-16 | 2016-09-29 | シチズンホールディングス株式会社 | Manufacturing method of machine component |
CN104977425B (en) * | 2015-06-19 | 2017-10-03 | 东南大学 | A kind of wind detection sensor chip structure and its manufacture method |
CH711248B1 (en) * | 2015-06-25 | 2019-07-31 | Nivarox Sa | Silicon-based part with at least one chamfer and its method of manufacture |
JP6514993B2 (en) | 2015-08-25 | 2019-05-15 | シチズン時計株式会社 | Method of manufacturing watch parts |
EP3181938B1 (en) | 2015-12-18 | 2019-02-20 | CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement | Method for manufacturing a hairspring with a predetermined stiffness by removing material |
CH711962B1 (en) * | 2015-12-18 | 2017-10-31 | Csem Centre Suisse D'electronique Et De Microtechnique Sa – Rech Et Développement | A method of manufacturing a hairspring of predetermined stiffness with localized removal of material |
JP6736365B2 (en) | 2016-06-10 | 2020-08-05 | シチズン時計株式会社 | Manufacturing method of watch parts |
TWI774925B (en) * | 2018-03-01 | 2022-08-21 | 瑞士商Csem瑞士電子及微技術研發公司 | Method for manufacturing a spiral spring |
EP3543795A1 (en) * | 2018-03-20 | 2019-09-25 | Patek Philippe SA Genève | Method for manufacturing silicon clock components |
-
2018
- 2018-03-21 EP EP18163053.4A patent/EP3543796A1/en not_active Withdrawn
-
2019
- 2019-03-21 US US16/982,418 patent/US11300926B2/en active Active
- 2019-03-21 WO PCT/EP2019/057160 patent/WO2019180177A1/en active Search and Examination
- 2019-03-21 JP JP2020549548A patent/JP7100711B2/en active Active
- 2019-03-21 CN CN201980017845.2A patent/CN111819501A/en active Pending
- 2019-03-21 KR KR1020207026526A patent/KR102448668B1/en active IP Right Grant
- 2019-03-21 EP EP19712197.3A patent/EP3769160A1/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021053501A1 (en) | 2019-09-16 | 2021-03-25 | Richemont International Sa | Method for manufacturing a plurality of resonators in a wafer |
EP4031936B1 (en) * | 2019-09-16 | 2023-11-08 | Richemont International S.A. | Method for manufacturing a plurality of resonators in a wafer |
Also Published As
Publication number | Publication date |
---|---|
CN111819501A (en) | 2020-10-23 |
WO2019180177A1 (en) | 2019-09-26 |
KR102448668B1 (en) | 2022-09-28 |
JP2021535356A (en) | 2021-12-16 |
KR20200120949A (en) | 2020-10-22 |
EP3543796A1 (en) | 2019-09-25 |
US11300926B2 (en) | 2022-04-12 |
US20210080909A1 (en) | 2021-03-18 |
JP7100711B2 (en) | 2022-07-13 |
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