EP3764389A4 - Plasmaätzverfahren unter verwendung eines faraday-käfigs - Google Patents

Plasmaätzverfahren unter verwendung eines faraday-käfigs Download PDF

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Publication number
EP3764389A4
EP3764389A4 EP19827477.1A EP19827477A EP3764389A4 EP 3764389 A4 EP3764389 A4 EP 3764389A4 EP 19827477 A EP19827477 A EP 19827477A EP 3764389 A4 EP3764389 A4 EP 3764389A4
Authority
EP
European Patent Office
Prior art keywords
plasma etching
etching method
faraday box
faraday
box
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP19827477.1A
Other languages
English (en)
French (fr)
Other versions
EP3764389A1 (de
EP3764389B1 (de
Inventor
Soo Hee KANG
Song Ho Jang
Geun Sik Jo
Chung Wan Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Chem Ltd
Original Assignee
LG Chem Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Chem Ltd filed Critical LG Chem Ltd
Publication of EP3764389A1 publication Critical patent/EP3764389A1/de
Publication of EP3764389A4 publication Critical patent/EP3764389A4/de
Application granted granted Critical
Publication of EP3764389B1 publication Critical patent/EP3764389B1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00—Moulds or cores; Details thereof or accessories therefor
    • B29C33/38—Moulds or cores; Details thereof or accessories therefor characterised by the material or the manufacturing process
    • B29C33/3842—Manufacturing moulds, e.g. shaping the mould surface by machining
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29L—INDEXING SCHEME ASSOCIATED WITH SUBCLASS B29C, RELATING TO PARTICULAR ARTICLES
    • B29L2031/00—Other particular articles
    • B29L2031/757—Moulds, cores, dies
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1847—Manufacturing methods
    • G02B5/1852—Manufacturing methods using mechanical means, e.g. ruling with diamond tool, moulding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Mechanical Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Optics & Photonics (AREA)
  • Drying Of Semiconductors (AREA)
  • Micromachines (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
  • Plasma Technology (AREA)
EP19827477.1A 2018-06-29 2019-06-18 Plasmaätzverfahren unter verwendung eines faraday-käfigs Active EP3764389B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020180075361A KR102273084B1 (ko) 2018-06-29 2018-06-29 파라데이 상자를 이용한 플라즈마 식각 방법
PCT/KR2019/007321 WO2020004854A1 (ko) 2018-06-29 2019-06-18 파라데이 상자를 이용한 플라즈마 식각 방법

Publications (3)

Publication Number Publication Date
EP3764389A1 EP3764389A1 (de) 2021-01-13
EP3764389A4 true EP3764389A4 (de) 2021-05-12
EP3764389B1 EP3764389B1 (de) 2024-01-10

Family

ID=68985123

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19827477.1A Active EP3764389B1 (de) 2018-06-29 2019-06-18 Plasmaätzverfahren unter verwendung eines faraday-käfigs

Country Status (6)

Country Link
US (1) US11276563B2 (de)
EP (1) EP3764389B1 (de)
JP (1) JP7086415B2 (de)
KR (1) KR102273084B1 (de)
CN (1) CN111868892B (de)
WO (1) WO2020004854A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102060551B1 (ko) * 2017-08-16 2020-02-11 주식회사 엘지화학 회절 격자 도광판용 몰드 기재의 제조방법 및 회절 격자 도광판의 제조방법
KR102527761B1 (ko) * 2018-11-07 2023-04-28 어플라이드 머티어리얼스, 인코포레이티드 경사 격자들의 형성
EP4020024A1 (de) 2020-12-22 2022-06-29 Paul Scherrer Institut Verfahren zur herstellung einer fächerförmigen optik mit hohem aspektverhältnis

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3712927A1 (de) * 2017-12-26 2020-09-23 Lg Chem, Ltd. Plasmaätzverfahren unter verwendung eines faraday-käfigs
EP3730271A1 (de) * 2018-06-20 2020-10-28 Lg Chem, Ltd. Verfahren zur herstellung einer form für eine beugungsgitterlichtleitplatte und verfahren zur herstellung einer beugungsgitterlichtleitplatte

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US4309267A (en) * 1980-07-21 1982-01-05 Bell Telephone Laboratories, Incorporated Reactive sputter etching apparatus
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JP3231165B2 (ja) * 1993-11-15 2001-11-19 キヤノン株式会社 光学素子成形用型及びその製造方法
JP3486287B2 (ja) 1996-02-05 2004-01-13 スピードファム株式会社 プラズマエッチング装置
US5761053A (en) * 1996-05-08 1998-06-02 W. L. Gore & Associates, Inc. Faraday cage
KR100281241B1 (ko) * 1998-11-19 2001-06-01 하대규 파라데이 상자의 윗면의 격자면을 변화시켜 플라즈마 식각을하는 방법
JP2002313732A (ja) 2001-04-11 2002-10-25 Seiko Epson Corp プラズマ装置
US6946054B2 (en) * 2002-02-22 2005-09-20 Tokyo Electron Limited Modified transfer function deposition baffles and high density plasma ignition therewith in semiconductor processing
US7879201B2 (en) * 2003-08-11 2011-02-01 Veeco Instruments Inc. Method and apparatus for surface processing of a substrate
KR100532968B1 (ko) 2004-04-22 2005-12-01 주식회사 하이닉스반도체 반도체 장치의 패턴 형성 방법
KR100792383B1 (ko) * 2005-08-10 2008-01-09 주식회사 하이닉스반도체 반도체 소자 제조 방법
KR100844029B1 (ko) 2006-12-15 2008-07-04 에이피티씨 주식회사 플라즈마 식각방법
KR101576205B1 (ko) * 2008-12-11 2015-12-10 삼성전자주식회사 극자외선 포토마스크, 이를 제조하기 위한 방법 및 장치
US8999105B2 (en) * 2012-01-06 2015-04-07 President And Fellows Of Harvard College Small-scale fabrication systems and methods
JP6115300B2 (ja) * 2012-08-23 2017-04-19 凸版印刷株式会社 インプリント用モールド、インプリント方法、パターン形成体
JP6051788B2 (ja) 2012-11-05 2016-12-27 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ発生装置
KR101409387B1 (ko) * 2013-01-16 2014-06-20 아주대학교산학협력단 경사 형태의 구리 나노 로드 제작방법
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JP2015090916A (ja) * 2013-11-06 2015-05-11 東京エレクトロン株式会社 基板処理装置及び基板処理方法
US20160035539A1 (en) 2014-07-30 2016-02-04 Lauri SAINIEMI Microfabrication
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Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3712927A1 (de) * 2017-12-26 2020-09-23 Lg Chem, Ltd. Plasmaätzverfahren unter verwendung eines faraday-käfigs
EP3730271A1 (de) * 2018-06-20 2020-10-28 Lg Chem, Ltd. Verfahren zur herstellung einer form für eine beugungsgitterlichtleitplatte und verfahren zur herstellung einer beugungsgitterlichtleitplatte

Also Published As

Publication number Publication date
KR102273084B1 (ko) 2021-07-06
EP3764389A1 (de) 2021-01-13
CN111868892B (zh) 2024-05-07
CN111868892A (zh) 2020-10-30
US20210027996A1 (en) 2021-01-28
KR20200002161A (ko) 2020-01-08
EP3764389B1 (de) 2024-01-10
JP2021516788A (ja) 2021-07-08
US11276563B2 (en) 2022-03-15
JP7086415B2 (ja) 2022-06-20
WO2020004854A1 (ko) 2020-01-02

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