EP3761345A4 - Composition dans laquelle l'endommagement d'une alumine est inhibiteur et procede de fabrication de substrat semi-conducteur mettant en oeuvre celle-ci - Google Patents

Composition dans laquelle l'endommagement d'une alumine est inhibiteur et procede de fabrication de substrat semi-conducteur mettant en oeuvre celle-ci Download PDF

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Publication number
EP3761345A4
EP3761345A4 EP19761160.1A EP19761160A EP3761345A4 EP 3761345 A4 EP3761345 A4 EP 3761345A4 EP 19761160 A EP19761160 A EP 19761160A EP 3761345 A4 EP3761345 A4 EP 3761345A4
Authority
EP
European Patent Office
Prior art keywords
alumina
suppressed
damage
composition
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP19761160.1A
Other languages
German (de)
English (en)
Other versions
EP3761345A1 (fr
Inventor
Toshiyuki Oie
Akinobu Horita
Kenji Yamada
Takahiro Kikunaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Gas Chemical Co Inc
Original Assignee
Mitsubishi Gas Chemical Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Gas Chemical Co Inc filed Critical Mitsubishi Gas Chemical Co Inc
Publication of EP3761345A1 publication Critical patent/EP3761345A1/fr
Publication of EP3761345A4 publication Critical patent/EP3761345A4/fr
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/10—Salts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/08—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/10—Salts
    • C11D7/105—Nitrates; Nitrites
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/265—Carboxylic acids or salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3281—Heterocyclic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5022—Organic solvents containing oxygen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Organic Chemistry (AREA)
  • Wood Science & Technology (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Emergency Medicine (AREA)
  • Health & Medical Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
EP19761160.1A 2018-03-02 2019-02-27 Composition dans laquelle l'endommagement d'une alumine est inhibiteur et procede de fabrication de substrat semi-conducteur mettant en oeuvre celle-ci Pending EP3761345A4 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018037143 2018-03-02
PCT/JP2019/007408 WO2019167970A1 (fr) 2018-03-02 2019-02-27 Composition dans laquelle l'endommagement d'une alumine est inhibé, et procédé de fabrication de substrat semi-conducteur mettant en œuvre celle-ci.

Publications (2)

Publication Number Publication Date
EP3761345A1 EP3761345A1 (fr) 2021-01-06
EP3761345A4 true EP3761345A4 (fr) 2021-04-28

Family

ID=67806237

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19761160.1A Pending EP3761345A4 (fr) 2018-03-02 2019-02-27 Composition dans laquelle l'endommagement d'une alumine est inhibiteur et procede de fabrication de substrat semi-conducteur mettant en oeuvre celle-ci

Country Status (8)

Country Link
US (1) US11479744B2 (fr)
EP (1) EP3761345A4 (fr)
JP (1) JP7294315B2 (fr)
KR (1) KR20200127151A (fr)
CN (1) CN111742392A (fr)
IL (1) IL277045B1 (fr)
TW (1) TW201938767A (fr)
WO (1) WO2019167970A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI762681B (zh) * 2017-07-31 2022-05-01 日商三菱瓦斯化學股份有限公司 抑制鈷、氧化鋁、層間絕緣膜與氮化矽之損傷的組成液及利用此組成液的清洗方法
US11352593B2 (en) * 2018-04-27 2022-06-07 Mitsubishi Gas Chemical Company, Inc. Aqueous composition and cleaning method using same
US11158518B2 (en) * 2019-09-25 2021-10-26 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of etching metals in semiconductor devices

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1808480A1 (fr) * 2006-01-12 2007-07-18 Air Products and Chemicals, Inc. Composition aqueuse de nettoyage à pH tamponné et procédé pour l'élimination de résidus de photorésine
EP3193359A1 (fr) * 2014-11-13 2017-07-19 Mitsubishi Gas Chemical Company, Inc. Liquide de nettoyage pour élément semi-conducteur inhibant les dommages sur des matériaux contenant du tantale, et procédé de nettoyage mettant en uvre celui-ci
EP3220408A1 (fr) * 2014-11-13 2017-09-20 Mitsubishi Gas Chemical Company, Inc. Liquide de nettoyage contenant un métal alcalino-terreux destiné à nettoyer un élément semi-conducteur, et procédé de nettoyage d'élément semi-conducteur mettant en uvre celui-ci
EP3220409A1 (fr) * 2014-11-13 2017-09-20 Mitsubishi Gas Chemical Company, Inc. Liquide de nettoyage pour élément semi-conducteur inhibant les dommages sur du cobalt, et procédé de nettoyage d'élément semi-conducteur mettant en oeuvre celui-ci

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3891768B2 (ja) 1999-12-28 2007-03-14 株式会社トクヤマ 残さ洗浄液
TW594444B (en) 2000-09-01 2004-06-21 Tokuyama Corp Residue cleaning solution
JP4758187B2 (ja) * 2005-09-26 2011-08-24 関東化学株式会社 フォトレジスト残渣及びポリマー残渣除去液
US8563431B2 (en) * 2006-08-25 2013-10-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7927991B2 (en) * 2006-08-25 2011-04-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7988057B2 (en) * 2006-11-28 2011-08-02 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
TW200908148A (en) 2007-03-31 2009-02-16 Advanced Tech Materials Methods for stripping material for wafer reclamation
JP6327746B2 (ja) * 2014-03-31 2018-05-23 株式会社フジミインコーポレーテッド 研磨用組成物
EP3093875A4 (fr) * 2014-04-10 2017-03-08 Mitsubishi Gas Chemical Company, Inc. Composition liquide pour nettoyage d'élément à semi-conducteur et procédé de nettoyage d'élément à semi-conducteur
EP3193358B1 (fr) * 2014-11-13 2021-03-31 Mitsubishi Gas Chemical Company, Inc. Liquide de nettoyage pour élément semi-conducteur inhibant les dommages sur des matériaux contenant du tungstène, et procédé de nettoyage d'élément semi-conducteur mettant en uvre celui-ci
JPWO2018061670A1 (ja) 2016-09-29 2019-06-24 富士フイルム株式会社 処理液、および積層体の処理方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1808480A1 (fr) * 2006-01-12 2007-07-18 Air Products and Chemicals, Inc. Composition aqueuse de nettoyage à pH tamponné et procédé pour l'élimination de résidus de photorésine
EP3193359A1 (fr) * 2014-11-13 2017-07-19 Mitsubishi Gas Chemical Company, Inc. Liquide de nettoyage pour élément semi-conducteur inhibant les dommages sur des matériaux contenant du tantale, et procédé de nettoyage mettant en uvre celui-ci
EP3220408A1 (fr) * 2014-11-13 2017-09-20 Mitsubishi Gas Chemical Company, Inc. Liquide de nettoyage contenant un métal alcalino-terreux destiné à nettoyer un élément semi-conducteur, et procédé de nettoyage d'élément semi-conducteur mettant en uvre celui-ci
EP3220409A1 (fr) * 2014-11-13 2017-09-20 Mitsubishi Gas Chemical Company, Inc. Liquide de nettoyage pour élément semi-conducteur inhibant les dommages sur du cobalt, et procédé de nettoyage d'élément semi-conducteur mettant en oeuvre celui-ci

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2019167970A1 *

Also Published As

Publication number Publication date
TW201938767A (zh) 2019-10-01
US20210002591A1 (en) 2021-01-07
CN111742392A (zh) 2020-10-02
EP3761345A1 (fr) 2021-01-06
US11479744B2 (en) 2022-10-25
JP7294315B2 (ja) 2023-06-20
JPWO2019167970A1 (ja) 2021-03-04
IL277045B1 (en) 2024-05-01
WO2019167970A1 (fr) 2019-09-06
KR20200127151A (ko) 2020-11-10
IL277045A (en) 2020-10-29

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