EP3734679A4 - Film mince de transmission électronique, procédé de préparation s'y rapportant et application associée - Google Patents

Film mince de transmission électronique, procédé de préparation s'y rapportant et application associée Download PDF

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Publication number
EP3734679A4
EP3734679A4 EP18896954.7A EP18896954A EP3734679A4 EP 3734679 A4 EP3734679 A4 EP 3734679A4 EP 18896954 A EP18896954 A EP 18896954A EP 3734679 A4 EP3734679 A4 EP 3734679A4
Authority
EP
European Patent Office
Prior art keywords
preparation
application
thin film
method therefor
electronic transmission
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP18896954.7A
Other languages
German (de)
English (en)
Other versions
EP3734679A1 (fr
Inventor
Longjia WU
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TCL Technology Group Co Ltd
Original Assignee
TCL Technology Group Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TCL Technology Group Co Ltd filed Critical TCL Technology Group Co Ltd
Publication of EP3734679A1 publication Critical patent/EP3734679A1/fr
Publication of EP3734679A4 publication Critical patent/EP3734679A4/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H10K50/165—Electron transporting layers comprising dopants
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/30—Doping active layers, e.g. electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H10K50/171—Electron injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Electroluminescent Light Sources (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Led Devices (AREA)
EP18896954.7A 2017-12-29 2018-12-25 Film mince de transmission électronique, procédé de préparation s'y rapportant et application associée Pending EP3734679A4 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201711472213.4A CN109994620A (zh) 2017-12-29 2017-12-29 电子传输薄膜及其制备方法和应用
PCT/CN2018/123505 WO2019128992A1 (fr) 2017-12-29 2018-12-25 Film mince de transmission électronique, procédé de préparation s'y rapportant et application associée

Publications (2)

Publication Number Publication Date
EP3734679A1 EP3734679A1 (fr) 2020-11-04
EP3734679A4 true EP3734679A4 (fr) 2021-02-24

Family

ID=67066610

Family Applications (1)

Application Number Title Priority Date Filing Date
EP18896954.7A Pending EP3734679A4 (fr) 2017-12-29 2018-12-25 Film mince de transmission électronique, procédé de préparation s'y rapportant et application associée

Country Status (6)

Country Link
US (1) US11329245B2 (fr)
EP (1) EP3734679A4 (fr)
JP (1) JP2021507541A (fr)
KR (3) KR20230053706A (fr)
CN (1) CN109994620A (fr)
WO (1) WO2019128992A1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113044875A (zh) * 2019-12-27 2021-06-29 Tcl集团股份有限公司 纳米材料及其制备方法、量子点发光二极管及其制备方法
CN113054121B (zh) * 2019-12-28 2022-07-05 Tcl科技集团股份有限公司 纳米材料及其制备方法、半导体器件
CN113130784B (zh) * 2019-12-31 2022-09-06 Tcl科技集团股份有限公司 复合材料及其制备方法和应用、量子点发光二极管
CN111276584B (zh) * 2020-02-18 2022-06-07 苏州星烁纳米科技有限公司 一种量子点发光器件、显示装置及电子传输材料溶液
CN113809245B (zh) * 2020-06-15 2022-11-04 Tcl科技集团股份有限公司 氧化锌纳米材料及其制备方法、半导体器件
US20230276649A1 (en) * 2020-07-22 2023-08-31 Sharp Kabushiki Kaisha Light-emitting element and method of manufacturing light-emitting element
CN112563874B (zh) * 2020-11-27 2021-07-30 南京大学 一种室温光激发氧化锌声子振动太赫兹激光器
CN112812765A (zh) * 2021-01-26 2021-05-18 阳明量子科技(深圳)有限公司 一种新型极性大带隙氧化锌量子点合成方法与应用

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120138894A1 (en) * 2009-07-07 2012-06-07 University Of Florida Research Foundation Inc. Stable and all solution processable quantum dot light-emitting diodes
CN106410051A (zh) * 2016-07-29 2017-02-15 宁波工程学院 一种金属元素掺杂ZnO纳米材料在发光二极管中的应用
CN106549109A (zh) * 2016-10-25 2017-03-29 Tcl集团股份有限公司 一种基于p‑i‑n结构的QLED器件及其制备方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101660120A (zh) * 2009-09-15 2010-03-03 中国科学院上海硅酸盐研究所 多元素掺杂的n型氧化锌基透明导电薄膜及其制备方法
KR101173105B1 (ko) * 2010-05-24 2012-08-14 한국과학기술원 유기발광소자
CN105762197B (zh) * 2016-04-08 2019-01-08 中国科学院上海硅酸盐研究所 基于铌镁酸铅钛酸铅单晶的半导体铁电场效应异质结构及其制备方法和应用

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120138894A1 (en) * 2009-07-07 2012-06-07 University Of Florida Research Foundation Inc. Stable and all solution processable quantum dot light-emitting diodes
CN106410051A (zh) * 2016-07-29 2017-02-15 宁波工程学院 一种金属元素掺杂ZnO纳米材料在发光二极管中的应用
CN106549109A (zh) * 2016-10-25 2017-03-29 Tcl集团股份有限公司 一种基于p‑i‑n结构的QLED器件及其制备方法

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
LEE YONG HUN ET AL: "Efficiency enhancement of inverted organic photovoltaic cells due to an embedded Ce-doped ZnO electron transport layer synthesized by using a sol-gel process", JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, SPRINGER, NEW YORK, NY, US, vol. 76, no. 3, 31 July 2015 (2015-07-31), pages 644 - 650, XP035550849, ISSN: 0928-0707, [retrieved on 20150731], DOI: 10.1007/S10971-015-3816-Z *
LI JINGLING ET AL: "Improved performance of quantum dot light emitting diode by modulating electron injection with yttrium-doped ZnO nanoparticles", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS, US, vol. 122, no. 13, 5 October 2017 (2017-10-05), XP012222542, ISSN: 0021-8979, [retrieved on 20171005], DOI: 10.1063/1.4991661 *
SAHIL GOEL ET AL: "Experimental investigation on the structural, dielectric, ferroelectric and piezoelectric properties of La doped ZnO nanoparticles and their application in dye-sensitized solar cells", PHYSICA E: LOW-DIMENSIONAL SYSTEMS AND NANOSTRUCTURES, vol. 91, 1 July 2017 (2017-07-01), NL, pages 72 - 81, XP055763591, ISSN: 1386-9477, DOI: 10.1016/j.physe.2017.04.010 *
SAYANTAN DAS ET AL: "Optimization of the zinc oxide electron transport layer in P 3 HT:PC 61 BM based organic solar cells by annealing and yttrium doping", RSC ADVANCES, vol. 5, no. 57, 1 January 2015 (2015-01-01), pages 45586 - 45591, XP055763592, DOI: 10.1039/C5RA05258K *
See also references of WO2019128992A1 *
SHOUQIN TIAN ET AL: "Surface doping of La ions into ZnO nanocrystals to lower the optimal working temperature for HCHO sensing properties", PHYSICAL CHEMISTRY CHEMICAL PHYSICS, vol. 17, no. 41, 1 January 2015 (2015-01-01), pages 27437 - 27445, XP055763596, ISSN: 1463-9076, DOI: 10.1039/C5CP04816H *

Also Published As

Publication number Publication date
WO2019128992A1 (fr) 2019-07-04
JP2021507541A (ja) 2021-02-22
CN109994620A (zh) 2019-07-09
US20200321547A1 (en) 2020-10-08
KR20230053706A (ko) 2023-04-21
KR20210154876A (ko) 2021-12-21
US11329245B2 (en) 2022-05-10
KR20200087847A (ko) 2020-07-21
EP3734679A1 (fr) 2020-11-04

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