Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
  • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
  • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
  • H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
  • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/0004—Devices characterised by their operation
  • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
  • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
  • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
  • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
  • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
  • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
  • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
  • H01L33/26—Materials of the light emitting region
  • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
  • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Definitions

• the present application relates generally to optoelectronic devices comprising three-dimensional light-emitting diodes based on semiconductor materials.
• a pixel of an image corresponds to the unitary element of the image displayed by the optoelectronic device.
• the optoelectronic device generally comprises, for the display of each pixel of the image, at least three components, also called sub-display pixels, which each emit a light radiation substantially in only one color (for example, red, green and blue).
• the superposition of the radiation emitted by these three sub-display pixels provides the observer with the color sensation corresponding to the pixel of the displayed image.
• the display pixel of the optoelectronic device the set formed by the three sub-display pixels used for displaying a pixel of an image.
• Each light emitting diode comprises an active area covering the side walls of the three-dimensional semiconductor element.
• the active area is the area of the light-emitting diode that emits the majority of the radiation emitted by the light-emitting diode.
• the active zone is covered with an electron blocking layer (EBL).
• EBL electron blocking layer
• the proportion of some elements may not be homogeneous over the entire EBL layer.
• the active area may cover a hole blocking layer (HBL or "Hole Blocking Layer") and the proportion of some elements may not be homogeneous over the entire HBL layer.
• HBL hole blocking layer
• an object of an embodiment is to overcome at least in part the disadvantages of the optoelectronic devices described above.
• an optoelectronic device comprising:
• a three-dimensional semiconductor element composed mainly of a first chemical element and a second chemical element, resting on the substrate;
• an active zone at least partially covering the side walls of the three-dimensional semiconductor element and comprising a stack of at least a first layer composed mainly of the first and second chemical elements, and at least one second layer composed predominantly of the first and second chemical elements and of a third chemical element;
• the third layer being composed predominantly of the first, second and third chemical elements and a fourth chemical element, the mass proportion of the third and fourth chemical elements of the third layer increasing or decreasing when the distance to the substrate increases;
• a fourth layer composed mainly of the first and second chemical elements, covering the third layer.
• the active zone is adapted to emit electromagnetic radiation and the third layer is a charge carrier blocking layer.
• the proportion of the third chemical element in the third layer is between 0.1 and 10%.
• the proportion of the fourth chemical element in the third layer is between 10 and 40%.
• the first chemical element is a Group III element.
• the first chemical element is gallium.
• the second chemical element is a group V element.
• the second chemical element is nitrogen.
• the third chemical element is a Group III element.
• the third chemical element is indium.
• the fourth chemical element is a Group III element. According to one embodiment, the fourth chemical element is aluminum.
• the semiconductor element is in the form of a wire.
• the semiconductor element is in the form of a pyramid.
• the maximum variation of the forbidden band in the third layer is less than the maximum variation of the forbidden band of the same layer not comprising the third chemical element.
• the third layer is an electron blocking layer or a hole blocking layer.
• Figure 1 is a partial sectional and schematic sectional view of an optoelectronic device comprising a three-dimensional light emitting diode
• FIG. 2 represents an evolution curve of the proportion of aluminum and an evolution curve of the band gap of one of the layers of the light-emitting diode shown in FIG. 1 as a function of the distance to the substrate on which is formed. the light-emitting diode;
• FIG. 3 represents evolution curves of the proportions of aluminum and indium and evolution curves of the forbidden band of one of the layers of the light emitting diode represented in FIG. 1 as a function of the distance to the substrate on which is formed the light emitting diode;
• FIG. 4 represents evolution curves, obtained by tests, of the band gap (in eV) of one of the layers of the light-emitting diode shown in FIG. function of the distance to the substrate on which the light-emitting diode is formed.
• the present disclosure relates to optoelectronic devices comprising radial type three-dimensional light-emitting diodes in which the active region of a light-emitting diode is formed on a semiconductor element having a three-dimensional shape, for example in the form of a microfilm, a nanowire or pyramid.
• microfil denotes a three-dimensional structure of elongated shape, for example cylindrical, conical or frustoconical, in a preferred direction of which at least two dimensions, called minor dimensions, are between 5 nm and 2.5 ⁇ m, preferably between 50 nm and 2.5 ⁇ m, the third dimension, called major dimension, being greater than or equal to 1 time, preferably greater than or equal to 5 times and even more preferably greater than or equal to 10 times, the largest of minor dimensions.
• the minor dimensions may be less than or equal to about 1 ⁇ m, preferably between 100 nm and 1 ⁇ m, more preferably between 100 nm and 800 nm.
• each microfil or nanowire may be greater than or equal to 50 nm, preferably between 50 nm and 50 ⁇ m, more preferably between 1 ⁇ m and 10 ⁇ m.
• the base of the wire has, for example, an oval, circular or polygonal shape, in particular triangular, rectangular, square or hexagonal.
• wire is used to mean “microfil” or “nanowire”.
• pyramid or truncated pyramid designates a three-dimensional structure of pyramidal shape.
• This pyramidal structure can be truncated, that is to say that the top of the cone is absent, leaving room for a plateau.
• the base of the pyramid is inscribed in a polygon whose side dimension is 100 nm to 10 ⁇ m, preferably between 1 and 3 ⁇ m.
• the polygon forming the base of the pyramid can be a hexagon.
• the height of the pyramid between the base of the pyramid and the summit or the summit plateau varies from 100 nm to 25 ⁇ m, preferably between 1 ⁇ m and 10 ⁇ m.
• FIG. 1 is a partial and schematic section of an optoelectronic device 10 adapted to emit electromagnetic radiation.
• the device 10 comprises a substrate 12, for example a semiconductor, comprising parallel faces 14 and 16.
• the face 14 is in contact with a first polarization electrode 18.
• each semiconductor element 20 has the shape of a wire extending from the However, the semiconductor elements 20 may have another three-dimensional shape.
• An electrically insulating layer 22 covers the face 16 of the substrate 12 and surrounds the lower part of each wire 20, that is to say the part of each wire 20 closest to the substrate 12.
• the side walls of the upper part of each wire 20, that is to say the part which is not surrounded by the insulating layer 22, are at least partially covered, here completely covered, with an active zone 24.
• the active zone 24 is covered with a layer 26 of electron blocking or EBL layer.
• the EBL layer 26 is covered with a semiconductor layer 28 and an electrically conductive layer 30 constituting a second electrode.
• the assembly formed by a wire 20, the active zone 24, the EBL layer 26 and the semiconductor layer 28 constitutes a light-emitting diode.
• a voltage is applied between the electrodes 18 and 30, light radiation is emitted by the active zone 24.
• several light-emitting diodes are formed on the substrate 12, they can be connected in series and / or in parallel and form a set electroluminescent diodes.
• the layer 30 may cover the semiconductor layers 28 of several light-emitting diodes.
• the layers 26 and 28 can cover the active areas 24 of several wires 20.
• the number of light-emitting diodes of the optoelectronic device can vary from 1 to several hundreds of millions.
• the electrode 18 may correspond to a conductive layer which extends on the face 14 of the substrate 12.
• the material forming the electrode 18 is, for example, nickel silicide (NiSi), aluminum (Al), aluminum silicide (AISi), titanium (Ti) or titanium silicide (TiSi).
• the substrate 12 may correspond to a one-piece structure or correspond to a layer covering a support made of another material.
• the substrate 12 is preferably a semiconductor substrate, for example a substrate made of silicon, germanium, silicon carbide, a compound III-V, or a compound II-VI, for example ZnO.
• the substrate 12 may also be sapphire or graphene.
• the substrate 12 is a monocrystalline silicon substrate. Preferably, this is a semiconductor substrate compatible with the manufacturing processes implemented in microelectronics.
• the substrate 12 may correspond to a multilayer structure of silicon on insulator type, also called SOI (acronym for "Silicon On Insulator").
• SOI acronym for "Silicon On Insulator"
• the substrate 12 may be heavily doped, weakly doped or undoped.
• group II chemicals include Group IIA chemicals, including beryllium (Be) and magnesium (Mg) and Group IIB chemicals, including zinc (Zn), cadmium (Cd) and mercury (Hg).
• Group VI chemical elements include chemical elements of the VIA group, including oxygen (O) and tellurium (Te).
• compounds II-VI are ZnO, ZnMgO, CdZnO, CdZnMgO, CdHgTe, CdTe or HgTe. In general, the chemical elements in II-VI can be combined with different mole fractions.
• the insulating layer 22 may be of a dielectric material or comprise a stack of dielectric layers, for example silicon oxide (SiC 2), silicon nitride (Si x N y , where x is approximately equal to 3 and y is approximately equal to 4, for example Si3N4), silicon oxynitride (in particular of general formula SiO x Ny, for example Si20N2), hafnium oxide (HfCl4) or diamond.
• the thickness of the insulating layer 22 is between 1 nm and 20 ⁇ m, preferably between 5 nm and 150 nm.
• Each semiconductor element 20 is in contact with the face 16 of the substrate 12.
• a seed layer of a material promoting the growth of the semiconductor elements 20 may be interposed between the substrate 12 and the semiconductor elements 20.
• the material composing the seed layer may be a nitride, a carbide or a boride of a transition metal of column IV, V or VI of the periodic table of the chemical elements or a combination of these compounds.
• the seed layer may be aluminum nitride (AlN), oxide of aluminum (Al 2 O 3), boron (B), boron nitride (BN), titanium (Ti), titanium nitride (TiN), tantalum (Ta), tantalum nitride (TaN), hafnium (Hf), hafnium nitride (HfN), niobium (Nb), niobium nitride (NbN), zirconium (Zr), zirconium borate (ZrB2), zirconium nitride (ZrN), silicon carbide (SiC), nitride and tantalum carbide (TaCN), or magnesium nitride in the form Mg x Ny, where x is approximately equal to 3 and y is approximately equal to 2, for example nitride of magnesium according to the form Mg3N2.
• Mg x Ny magnesium nitride in the form Mg x Ny
• the seed layer may be doped with the same type of conductivity as the substrate 12.
• the seed layer has, for example, a thickness of between 1 and 100 nanometers, preferably between 10 and 30 nanometers.
• the seed layer may be replaced by germination pads resting on the face 16 of the substrate 12, each wire 20 resting on one of the seed pads.
• the semiconductor elements 20 may be mainly formed of a compound comprising a first chemical element and a second chemical element, in particular a binary compound.
• the first chemical element can be a Group III element.
• the second chemical element may be a group V element.
• the semiconductor elements 20 may therefore be of a III-V compound.
• group III chemicals include gallium (Ga), indium (In) or aluminum (Al).
• Group V chemicals include nitrogen, phosphorus or arsenic.
• III-N compounds are GaN, AlN, InN, InGaN, AlGaN or AlInGaN. In general, the chemical elements in compound III-V can be combined with different molar fractions.
• the semiconductor elements 20 may also be predominantly of an AlGalnP type alloy.
• the semiconductor elements 20 may comprise a dopant.
• the dopant may be chosen from the group comprising a P-type dopant of group II, for example, magnesium (Mg), zinc (Zn), cadmium (Cd) or mercury (Hg), a group IV dopant P, for example carbon (C) or a dopant of type N of group IV, for example silicon (Si), germanium (Ge), selenium (Se), sulfur (S), terbium (Tb) or tin (Sn).
• group II magnesium
• Zn zinc
• Cd cadmium
• Hg mercury
• a group IV dopant P for example carbon (C) or a dopant of type N of group IV, for example silicon (Si), germanium (Ge), selenium (Se), sulfur (S), terbium (Tb) or tin (Sn).
• each wire 20 may have an elongated semiconductor structure along an axis D substantially perpendicular to the face 16.
• each pyramid When the three-dimensional semiconductor elements 20 of the optoelectronic device 10 correspond to pyramids, the height of each pyramid may be between 100 nm and 25 ⁇ m.
• Each pyramid can have an elongated semiconductor structure according to a substantially perpendicular axis ⁇ angles to the face 16.
• each wire 20 or of each pyramid may have a general shape of oval, circular or polygonal type, in particular triangular, rectangular, square or hexagonal.
• the centers of two or two adjacent pyramids may be distant from 0.25 ⁇ m to 10 ⁇ m and preferably from 1.5 ⁇ m to 5 ⁇ m.
• the wires 20 or the pyramids can be regularly distributed, in particular along a hexagonal network.
• the active zone 24 may comprise a single quantum well.
• the active zone 24 may then comprise a layer predominantly of a III-V ternary compound.
• the active zone 24 comprises a layer comprising predominantly the first and second chemical elements described above in relation to the semiconductor element 20 and a third chemical element of the same group as the first chemical element other than the first chemical element.
• Active zone 24 may also include multiple quantum wells. It then comprises a stack of semiconductor layers forming an alternation of quantum wells and barrier layers. It may be formed of an alternation of layers predominantly of a III-V binary compound, and layers predominantly of a ternary III-V compound. Preferably, the active zone comprises an alternation of layers comprising predominantly the first chemical element and the second chemical element, and layers comprising predominantly the first, second and third chemical elements.
• the semiconductor layer 28 may be composed of the same elements as the semiconductor element 20.
• the semiconductor layer comprises for example mainly the first element and the second element.
• the semiconductor layer 28 is for example doped with a doping type that is opposite to the doping type of the semiconductor element 20.
• the electrode 30 is adapted to bias the active region 24 covering each semiconductor element 20 and to pass electromagnetic radiation emitted by the light-emitting diodes ⁇ .
• the material forming the electrode 30 may be a transparent and conductive material such as indium tin oxide (ITO), zinc oxide which may or may not be doped with aluminum. or gallium, or graphene.
• ITO indium tin oxide
• the electrode layer 30 has a thickness of between 5 nm and 200 nm, preferably between 20 nm and 50 nm.
• the EBL layer 26 is mainly composed of a ternary alloy comprising the first chemical element, the second chemical element and a fourth chemical element of the same group as the first chemical element but other than the first or the third chemical element.
• the wire 20 is GaN and the quantum well comprises a layer of N, where y is the proportion of In, and generally referred to as InGaN
• the EBL layer it is known for the EBL layer to be predominantly of gallium aluminum nitride Al x Ga ( ] -x ) N, where x is the proportion of aluminum, and generally designated AlGaN, and to be in contact with the active zone 24, to ensure a good distribution of the charge carriers in the active zone 24.
• the layer 26 may have a thickness between 5 nm and 60 nm and the proportion of aluminum x may vary between 5% and 60%, preferably between 15% and 25%.
• Proportion means the atomic proportion without nitrogen.
• 20% of the non-nitrogen atoms are aluminum and 80% of the non-nitrogen atoms are gallium.
• each semiconductor element 20, the active zone 24, the EBL layer 26 and the semiconductor layer 28 may be a process of the chemical vapor deposition (CVD) or deposition type.
• MOCVD Metal-Organic Chemical Vapor Deposition
• MOVPE organometallic vapor phase epitaxy
• MBE molecular beam epitaxy
• MBBE gas-source MBE
• MOMBE organometallic MBE
• RMBE plasma-assisted MBE
• ALE Atomic Layer Epitaxy
• HVPE Hydride Vapor Phase Epitaxy
• the process may comprise injecting into a reactor a precursor of the first chemical element, a precursor of the second chemical element and, optionally, a precursor of the third chemical element and / or a precursor of the fourth chemical element.
• FIG. 2 represents a curve 40 for the evolution of the proportion x (in percent) of aluminum in the EBL layer 26 of the light emitting diode shown in FIG. 1, mainly composed of AlGaN, and a curve 42 of evolution of the strip. forbidden (in electronvolt) of the EBL layer 26 as a function of the distance to the substrate 12.
• the proportion of the fourth chemical element here the aluminum of the compound AlGaN
• the proportion of aluminum in the layer 26 can increase, or decrease, as the distance between the substrate 12 and the considered point of the layer 26 increases.
• the proportion of aluminum increases between the bottom part ("Bottom") of the wire 20 and the top ("Top") of the wire 20.
• This variation in proportion is accompanied by a similar variation, illustrated by the curve 42, of the forbidden band ("bandgap") of the EBL layer 26 predominantly composed of AlGaN.
• the variation of the band gap can be determined as known in the state of the art, especially as described in the publication by Sakalauskas et al entitled "Dielectric function and optical properties of quaternary AlInGaN alloys" (Journal of Applied Physics 110, 013102 (2011)).
• the forbidden band is higher at the top of the wire 20 than at the bottom of the wire 20.
• the current distribution through the active zone 24, and therefore the intensity of the radiation emitted by the active zone 24, n is not homogeneous. The efficiency of the light emitting diode is therefore not optimal.
• the third element is added to the composition of the EBL layer 26.
• the EBL layer 26 is therefore mainly a quaternary compound comprising the first, second, third and fourth chemical elements.
• the EBL layer 26 is not AlGaN but Al x In z Ga (i- xz ) N, where x is the proportion of aluminum, z the proportion of indium, which is generally designated by AlInGaN.
• FIG. 3 represents curves 43 and 44 of evolution of the proportion (in percent) of aluminum and indium in the EBL layer 26 of the light emitting diode represented in FIG. 1, composed here mainly of AlInGaN.
• FIG. 3 also represents the curve 42, reproduced for comparison, and a curve 46 for changing the forbidden band (in electronvolt) of the AlGaN layer and that of AlInGaN as a function of the distance to the substrate 12.
• the inventors have demonstrated that the variations in the band gap of the EBL layer 26 mainly composed of AlInGaN, schematically illustrated by the curve 46 which is substantially constant in FIG. 3, are reduced compared with those of the EBL layer 26 mainly. in AlGaN, illustrated by the curve 42.
• the distribution of the current flowing through the active zone 24 is therefore more homogeneous over the whole of the light-emitting diode, and the intensity of the radiation emitted by the active zone 24 is thus, also, more homogeneous.
• the efficiency of the light-emitting diode is thus improved.
• FIG. 4 shows evolution curves, obtained by tests, of the forbidden band of EBL layers 26 of the light-emitting diode shown in FIG. 1 as a function of the distance to the substrate on which the light-emitting diode is formed.
• Curve 48 corresponds, like curve 42 of FIG. 3, to an EBL 26 layer predominantly AlGaN
• curve 50 corresponds, like curve 46 of FIG. 3, to an EBL 26 layer predominantly AlInGaN.
• the EBL layers 26 were for example made at a pressure of between 75 and 500 Torr and at a temperature of between 800 and 1000 ° C.
• the precursors used are, for example, trimethylgallium at a flow rate of 82.75 sccm (standard cubic centimeter per minute) for gallium, ammonia at a flow rate of 50 L / min for nitrogen, and trimethylindium at a flow rate of 900 sccm for indium and trimethylaluminium at a flow rate of 570 sccm for aluminum.
• the proportion of aluminum is substantially equal to 15%, and the band gap is substantially equal to 3.75 eV.
• the proportion of aluminum is substantially equal to 25%, and the forbidden band is substantially equal to 3.96 eV.
• the proportion of aluminum is substantially equal to 30%, and the band gap is substantially equal to 4.1 eV.
• the proportion of aluminum is substantially equal to 15%, the proportion of indium is substantially equal to 1% and the bandgap is substantially equal to 3.7 eV.
• the proportion of aluminum is substantially equal to 25%, the proportion of indium is substantially equal to 2% and the forbidden band is substantially equal to 3.88 eV.
• the proportion of aluminum is substantially equal to 30%, the proportion of indium is substantially equal to 5% and the bandgap is substantially equal to 3, 9 eV.
• One advantage is that the third element which is added to the composition of the EBL layer is already present in the composition of other layers of the light emitting diode, especially in the active zone. Injections of the precursor of the third element are therefore already provided. Changes to the existing process are therefore reduced.
• the optoelectronic device comprises a light-emitting diode.
• the embodiments described here can also be implemented in the case of photodiodes.
• the active zone is adapted to capture electromagnetic radiation and to convert the captured photons into charge carriers.
• the embodiments described above can also be applied to an HBL layer.
• the EBL or HBL layer may be interposed between the active zone and the three-dimensional semiconductor element.

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