Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
  • H01P3/00—Waveguides; Transmission lines of the waveguide type
  • H01P3/12—Hollow waveguides
  • H01P3/121—Hollow waveguides integrated in a substrate
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
  • H01P1/00—Auxiliary devices
  • H01P1/20—Frequency-selective devices, e.g. filters
  • H01P1/207—Hollow waveguide filters
  • H01P1/208—Cascaded cavities; Cascaded resonators inside a hollow waveguide structure
  • H01P1/2088—Integrated in a substrate

Definitions

• the present invention relates to a microwave component of the transmission line type integrated into the substrate, comprising a propagation zone extending along an axis of propagation and being delimited transversely, with respect to the axis of propagation, by a least one electrically conductive wall, the propagation zone being configured to present, at a predetermined reference temperature, a corresponding predetermined frequency response.
• the invention also relates to a method of manufacturing such a microwave component.
• the invention applies to the field of microwave components based on microwave transmission lines.
• GIS substrate-integrated waveguide
• components are commonly referred to as “GIS components” or referred to as “substrate-integrated transmission line components”.
• the components of the type of transmission line integrated into the substrate there are generally the components of the guide type integrated in the substrate, the type of hollow guide integrated into the substrate, the coaxial line type integrated into the substrate and suspended line type integrated into the substrate.
• Such GIS components are made from substrates commonly used for the manufacture of electronic cards, which makes the manufacture of such GIS components inexpensive.
• GIS components have a reduced mass compared to conventional microwave components, and do not generally require shielding, while allowing a high integration density.
• GIS components are a serious alternative to conventional microwave waveguide components, which generally do not have such advantages.
• microwave GIS components are not entirely satisfactory.
• the materials in which a GIS component of the state of the art is produced are generally subject to expansion or contraction during a variation in their temperature. This results in a fluctuation of the dimensions of such a GIS component, and in particular by a fluctuation of the dimensions of a propagation zone of said GIS component, intended for guiding electromagnetic waves. This results, in particular, a fluctuation of the frequency response of such microwave GIS component with the temperature.
• bandwidth is intended to mean a frequency band around the central frequency in which the frequency response of the component has an amplitude at least equal to a predetermined fraction of an amplitude. the frequency response reached at said central frequency.
• An object of the invention is therefore to provide a microwave component of the transmission line type integrated into the substrate in which the fluctuation of the frequency response with the temperature is lower.
• the subject of the invention is a microwave component of the above-mentioned type, further comprising at least one compensation block arranged in the propagation zone, the at least one compensation block being made of a material dielectric having a dielectric permittivity whose temperature derivative, within a predetermined temperature range of interest around the reference temperature, has a sign opposite to the sign of at least one coefficient of thermal expansion of the propagation zone , the dimensions of the at least one compensation block, at the reference temperature, being chosen so that the at least one compensation block is able to compensate a variation of the frequency response with the temperature, in the range of temperature of interest.
• the at least one compensation block being made of a dielectric material having a dielectric permittivity whose derivative with respect to the temperature has a sign opposite to the sign of at least one coefficient of thermal expansion of the propagation zone,
• the dielectric permittivity variations of the at least one compensation block with the temperature cause the frequency response to shift in an opposite direction with respect to the offset caused by the size variations of the propagation zone.
• the microwave component comprises one or more of the following characteristics, taken in isolation or in any technically possible combination:
• the dimensions of the at least one compensation block are a function of a central frequency of the frequency response at the reference temperature, of the at least one thermal expansion coefficient of the propagation zone, of at least one a coefficient of thermal expansion of the compensation block, the dielectric permittivity of the dielectric material in which the at least one compensation block is produced and the derivative, with respect to the temperature, of the dielectric permittivity of the dielectric material in which is realized the at least one compensation block;
• the propagation zone comprises at least one resonator, the resonator having, at the reference temperature, a resonator length and a half-width of predetermined resonator, at least one compensation block being arranged in the resonator, the dimensions of the resonator being at least one compensation block being a function of the resonator length and the resonator resonator half-width;
• the resonator is delimited, along a transverse axis orthogonal to the axis of propagation, by two electrically conductive walls, two compensation blocks being arranged in the resonator, each compensation block being fixed to a respective electrically conductive wall of the two walls. electrically conductive;
• the resonator is symmetrical with respect to a plane of symmetry orthogonal to the transverse axis, and the two compensation blocks are symmetrical with respect to the plane of symmetry,
• wo is said difference between the resonator resonator half-width and the block width along the transverse axis, called "half-distance";
• DT is the difference between the temperature distinct from the reference temperature and the reference temperature
• mo is the magnetic permeability of the void
• eo is the dielectric permittivity of the vacuum
• r , o is the relative permittivity of a dielectric material, in the propagation zone, which is distinct from the dielectric material of the two compensation blocks;
• e r , i is the relative permittivity of the dielectric material in which the two compensation blocks are made
• d e o is the derivative with respect to the temperature of the relative permittivity e G o;
• f is the center frequency of the resonator
• tan is the function "tangent"
• d c is the coefficient of thermal expansion of the propagation zone along the axis of propagation
• Y is the coefficient of thermal expansion of the propagation zone along the transverse axis
• L is the resonator length of the resonator
• the exponent "T” refers to a value of a magnitude when the microwave component has the reference temperature
• the exponent "T + DT" refers to the value of a quantity when the microwave component has the temperature distinct from the reference temperature
• the propagation zone comprises a cavity delimited, along a transverse axis orthogonal to the propagation axis, by a dielectric surface of at least one substrate, the at least one substrate comprising at least one vias path, each via extending along an axis not parallel to the transverse axis, the at least one vias path at least partially forming the at least one electrically conductive wall, at least one compensation block being delimited, along the transverse axis, between the vias path and the dielectric surface;
• the component comprises a substrate comprising an upper conductive layer and a lower conductive layer separated by a dielectric layer, each of the upper conductive layer, the lower conductive layer and the dielectric layer extending in a plane defined by the propagation axis; and a transverse axis orthogonal to the axis of propagation, the substrate comprising two vias paths spaced from each other along the transverse axis, each via extending between the upper conductive layer and the lower conductive layer of substrate, each vias path forming at least partially the at least one electrically conductive wall, at least one compensation block being arranged in a corresponding cell formed within the propagation zone, in the dielectric layer.
• the subject of the invention is a method for manufacturing a microwave component of the transmission line type integrated into the substrate, comprising the steps of:
• the compensation device comprising at least one compensation block arranged in the propagation zone, each compensation block being made of a dielectric material having a dielectric permittivity whose derivative with respect to the temperature, in a predetermined temperature range of interest around the reference temperature, at a sign opposite to the sign of at least one coefficient of thermal expansion of the propagation zone, the dimensions of the at least one compensation block, at the reference temperature being chosen so that the at least one compensation block is suitable for compensate for a variation of the frequency response with the temperature in the temperature range of interest.
• the method comprises the following characteristic: the propagation zone comprises a cavity delimited, along a transverse axis orthogonal to the axis of propagation, by a dielectric surface of at least one substrate, realization step comprising producing, in the at least one substrate, a plurality of vias each extending along an axis not parallel to the transverse axis, the vias defining at least one path, each vias path forming at least partially the at least one electrically conductive wall, at least one compensation block being delimited, along the transverse axis, between the vias path and the dielectric surface.
• FIG. 1 is a sectional view of a first embodiment of a microwave component according to the invention, according to a sectional plane defined by a transverse axis and a propagation axis of the microwave component;
• FIG. 2 is a sectional view of the microwave component of FIG. 1, in a plane orthogonal to the axis of propagation passing through projections of lateral substrates of the microwave component;
• FIG. 3 is a sectional view of the microwave component of Figure 1, in a plane orthogonal to the axis of propagation passing through hollow side substrates of the microwave component;
• FIG. 4 is a sectional view of a second embodiment of a microwave component according to the invention, according to a sectional plane defined by a transverse axis and an axis of propagation of the microwave component;
• FIG. 5 is a sectional view of the microwave component of FIG. 4, in a plane orthogonal to the axis of propagation passing through conductive surfaces of lateral substrates of the microwave component;
• FIG. 6 is a sectional view of the microwave component of FIG. 4, in a plane orthogonal to the axis of propagation passing through vias of the lateral substrates of the microwave component;
• FIG. 7 is a graph showing the evolution, with frequency, of a transmission coefficient of the microwave component of FIG. 4, at three different temperatures;
• FIG. 8 is a graph showing the evolution, with frequency, of a transmission coefficient of a microwave component of the state of the art, at three different temperatures.
• FIG. 9 is a sectional view of a third embodiment of a microwave component according to the invention, according to a sectional plane defined by a transverse axis and an axis of propagation of the microwave component.
• FIGS. 1 to 3 A first embodiment of a microwave component 2 according to the invention is diagrammatically represented in FIGS. 1 to 3.
• the microwave component 2 is, for example, a filter, a coupler, an antenna, an oscillator, a load, a circulator or an insulator.
• the microwave component 2 is of the "hollow waveguide integrated substrate” type.
• the microwave component 2 comprises a waveguide 4 and a compensation device 6.
• the waveguide 4 is configured to allow the propagation of an electromagnetic wave along a propagation axis XX.
• the waveguide 4 comprises a propagation zone 5 intended to confine the electromagnetic wave.
• the spatial boundaries of the propagation zone 5 will be defined later.
• the waveguide 4 has, at a given temperature, a frequency response that is representative of how the electromagnetic wave propagates in the waveguide as a function of its frequency.
• the compensation device 6 is adapted to prevent, in particular to compensate, a thermal drift of predetermined properties of the waveguide 4.
• the compensation device 6 is configured to compensate for a thermal drift of a frequency response of the guide 4, for example a thermal drift of a transmission coefficient and / or a reflection coefficient of the waveguide 4.
• the compensation device 6 is in particular configured to compensate for a thermal drift of a central frequency and a bandwidth of the waveguide 4.
• the waveguide 4 will now be described.
• the waveguide 4 comprises four substrates 8.
• Each substrate 8 is, for example, an electronic card.
• the substrates 8 are divided into an upper substrate 8A, a lower substrate 8B, and two lateral substrates 8C and 8D respectively.
• Each substrate 8 extends in a plane XY, defined by the axis of propagation X-X and by a transverse axis Y-Y orthogonal to the axis of propagation X-X.
• a vertical axis Z-Z, orthogonal to the axis of propagation X-X and the transverse axis Y-Y, is also shown in Figures 2 and 3, as well as in Figure 1.
• Each substrate 8 comprises an upper conductive layer 10, a lower conductive layer 12 and a dielectric layer 14.
• the upper conductive layer 10, the lower conductive layer 12 and the dielectric layer 14 each extend in the XY plane.
• the upper conductive layer 10 and the lower conductive layer 12 are arranged at a distance from each other, on either side of the dielectric layer 14, in contact with the dielectric layer
• Each of the upper conductive layer 10 and the lower conductive layer 12 is made of an electrically conductive material, for example copper.
• the dielectric layer 14 is made of a dielectric material, for example an epoxy resin, or a ceramic / polytetrafluoroethylene composite.
• such a composite is the composite generally known under the trade name "RT / Duroid 6010LM", which has, between -40 ° C (degrees Celsius) and 80 ° C, a coefficient of thermal expansion of substantially constant value equal at 24.10 6 / K (per Kelvin).
• the upper substrate 8A, the lateral substrates 8C and 8D and the lower substrate 8B are arranged in a stack.
• the lateral substrates 8C, 8D are reported on the lower substrate 8B.
• the lower conductive layer 12 of each of the lateral substrates 8C, 8D is pressed against the upper conductive layer 10 of the lower substrate 8B, in electrical contact with the upper conductive layer 10 of the lower substrate 8B.
• respective slices of the lateral substrates 8C, 8D are arranged facing one another at a distance from each other along the transverse axis Y-Y.
• the upper substrate 8A is attached to the side substrates 8C, 8D.
• the lower conductive layer 12 of the upper substrate 8A is pressed against the upper conductive layer 10 of each of the lateral substrates 8C, 8D, in electrical contact with the upper conductive layer 10 of each of the lateral substrates 8C, 8D.
• the upper substrate 8A and the lower substrate 8B are arranged at a distance from each other along the vertical axis ZZ, the lower conductive layer 12 of the upper substrate 8A being opposite the upper conductive layer 10 of the lower substrate 8B.
• Each wafer 15 is covered with a conductive film 25 made of an electrically conductive material, such as a metal, for example copper.
• a conductive film 25 is continuous, along the vertical axis ZZ, of the upper conductive layer 10 to the layer lower conductor 12 of the lateral substrate 8C, 8D corresponding, being in electrical contact with the upper conductive layer 10 and the lower conductive layer 12.
• the lower conductive layer 12 of the upper substrate 8A, the conductive film 25 of each lateral substrate 8C, 8D and the upper conductive layer 10 of the lower substrate 8B define a cavity 20 transversely between them.
• the cavity 20 is filled with air, or even another gas, for example nitrogen, or gas vacuum.
• the cavity 20 is filled with a dielectric material that is distinct from a material in which compensation blocks described below are made.
• the cavity 20 constitutes the propagation zone 5 of the microwave component 2.
• each lateral substrate 8C, 8D is cut out so that it has an alternation of projections 16 and recesses 17.
• Each projection 16 of one of the lateral substrates 8C, 8D extends in the direction on the other side substrates 8C, 8D.
• each recess 17 separates two successive protrusions 16 along the axis of propagation X-X. In this case, such cutting gives the slice 15, in the XY plane, a crenellated form.
• the slices 15 of the lateral substrates 8C, 8D are symmetrical to one another with respect to a plane XZ, defined by the propagation axis X-X and the vertical axis Z-Z. More preferably, the slices 15 of the side substrates 8C, 8D comprise only planar portions, extending parallel to one or the other of the XZ and YZ planes.
• a projection 16 of one of the lateral substrates 8C, 8D facing a projection 16 of the other of the lateral substrates 8C, 8D define between them, along the transverse axis Y-Y, a coupling window 18.
• each resonator 19 is located at two respective recesses 17 of the lateral substrates 8C, 8D facing one of the other, along the transverse axis YY.
• Half of the distance, along the transverse axis YY, separating the slices 15 at a given resonator 19 is called "half-distance wo".
• the half distance wo is likely to vary with the temperature.
• the distance along the axis of propagation X-X, separating two projections 16 on either side of a resonator 19 is denoted L.
• the distance L is also called "resonator length”.
• the length of the resonator L is likely to vary with the temperature.
• the compensation device 6 will now be described.
• the compensation device 6 comprises at least one compensation block 28.
• Each compensation block 28 is made of a dielectric material.
• each compensation block 28 is made of a dielectric material having a dielectric permittivity whose derivative with respect to the temperature, within a predetermined temperature range of interest, has a sign opposite to the sign of at least one coefficient of thermal expansion of the substrates 8 in the range of interest.
• each compensation block 28 is made of a dielectric material having, in the range of interest, a dielectric permittivity whose derivative with respect to the temperature has a sign opposite the sign of the thermal expansion coefficients of the substrates 8 in the range of interest.
• thermal expansion coefficients of the substrates 8 conditioning the variations of the dimensions of the propagation zone 5 they will also be called “coefficients of thermal expansion of the propagation zone”.
• each compensation block 28 is made of the same dielectric material as the material in which the dielectric layer 14 of the substrates 8 is made.
• each compensation block 28 has expansion coefficients equal to those of the substrates 8 .
• the composite material mentioned above has a dielectric permittivity whose derivative with respect to the temperature is -425.10 6 / K.
• Each compensation block 28 is arranged in the cavity 20, that is to say in the propagation zone 5.
• each compensation block 28 is arranged in the cavity 20 at a corresponding resonator 19.
• two compensation blocks 28 are arranged in the cavity 20.
• each compensation block 28 is parallelepipedic.
• each compensation block 28 extends, along the vertical axis Z-Z, of the upper conductive layer 10 of the lower substrate 8B to the lower conductive layer 12 of the upper substrate 8A.
• each compensation block 28 has a length, along the axis of propagation X-X, equal to the resonator length L of the corresponding resonator 19.
• the compensation block 28 extends, along the X-X propagation axis, between the two projections 16 of the same lateral substrate 8C, 8D longitudinally defining the corresponding resonator 19.
• each compensation block 28 is integral with a corresponding wafer 15, for example glued to the wafer 15.
• each compensation block 28 comprises a free surface 30 which faces the cavity 20.
• the distance along the transverse axis YY, denoted wi, between the free surface 30 of a given compensation block 28 and the recess 17 of the corresponding wafer 15 is chosen depending on the properties of the resonator 19 corresponding.
• the distance wi also called “block width” is likely to vary with temperature.
• each of the two corresponding compensation blocks 28 For a given resonator 19 defined between two successive coupling windows 18 along the propagation axis XX, the dimensioning of each of the two corresponding compensation blocks 28, and in particular the choice of the block width w i, will now be described.
• the block width wi and the half-distance wo are such that their sum, denoted W and called "half-width of resonator", at a reference temperature, is fixed.
• the equivalent model involves a plurality of quantities described below.
• the exponent "T” will refer to the value of a quantity when the microwave component 2 has a reference temperature T
• the exponent "T + DT” will refer to the value a quantity when the microwave component 2 has a temperature T + DT different from the reference temperature, DT being a non-zero temperature difference.
• second equivalent impedance Z ei a second equivalent impedance Z ei reduced to a plane of symmetry of the resonator 19, hereinafter referred to as "second equivalent impedance Z ei ", according to the formula:
• f is a natural frequency of the resonator
• tan is the "tangent" function.
• the natural frequency f of the resonator is also denoted f mn , the integers (m, n) being the integers characterizing the eigen mode considered of the resonator.
• first equivalent impedance Z e o a first equivalent impedance Z e o reduced to the plane of symmetry of the resonator 19, hereinafter referred to as "first equivalent impedance Z e o", according to the formula:
• r , o is the relative permittivity of the medium in the cavity 20 which is distinct from the compensation blocks 28, and which, in the example, is assumed to be independent of the temperature (when the cavity is filled with gas, or empty ).
• the waveguide 4 and the compensation blocks 28 expand or contract, according to the sign of the coefficients of thermal expansion of the substrates 8 and the coefficient of thermal expansion of the material in which the compensation blocks 28 are made.
• the half-distance wo, the length of the resonator L and the block width w i change, respectively, with the temperature, according to the following relations:
• d g is the coefficient of thermal expansion of the substrate 8 along the transverse axis YY;
• d c is the coefficient of thermal expansion of the substrate 8 along the axis of propagation XX.
• d e is the derivative relative to the temperature of the relative permittivity e G i of the material in which the compensation blocks 28 are produced, that is to say, in the example, the material of the dielectric layer Substrates 8.
• the second propagation constant b 1 the second guide impedance Z 1 and the second equivalent impedance Z e 1 are expressed according to:
• the first propagation constant bo the first guide impedance Zo and the first equivalent impedance Z e o are expressed according to:
• the condition according to which the natural frequency of the resonator 19 is the same at T and at T + DT is imposed.
• the natural frequency of the resonator 19 is set at 21 GHz.
• the resolution of the associated equation corresponds to the resolution of the following equation: "the inverse of the imaginary part of the first equivalent impedance Z e o is zero".
• eigenmodes for which the value of at least one of the integers m and n is greater than 1 are used.
• the difference, at the reference temperature T, between the resonator half-width W of the resonator 19 and the block width wi of one of the two compensation blocks 28, for a transverse eigenmode determined for a pair of integers (m, n), is equal to the value for which the center frequency of the frequency response of the resonator 19 (i.e., its natural frequency) at a temperature T + DT Anything different from the reference temperature T is equal to the center frequency at the reference temperature T.
• the half-distance wo is measured from the center of the vias 24.
• the effective value of the half-distance wo is taken equal to the calculated value of the half-distance wo, to which is subtracted a corrective factor which is a function of the diameter of the vias 24 and the distance between two successive vias 24 along the path 26.
• a corrective factor is, for example, equal to d 2 /0.95D, where d is the diameter of the vias 24, and D is the distance separating the centers of two successive vias along the path 26 .
• FIGS. 4 to 6 A second embodiment of a microwave component 102 according to the invention will now be described with reference to FIGS. 4 to 6.
• the microwave component 2 is of the "hollow waveguide integrated substrate” type.
• the microwave component 102 of Figures 4 to 6 differs from the microwave component 2 of Figures 1 to 3 in that the conductive film 25 is not continuous along the edges 15 of the side substrates 8C, 8D, according to the invention.
• propagation axis XX propagation axis XX.
• each slice 15 of the lateral substrates 8C, 8D each comprise at least one dielectric surface 22.
• each slice 15 comprises at least one conductive surface 23.
• Each conductive surface 23 is a part of the wafer 15 which is covered by the conductive film 25.
• Each conductive surface 23 extends, along the vertical axis ZZ, between the upper conductive layer 10 and the lower conductive layer 12 of the lateral substrate. 8C, 8D corresponding, in electrical contact with the upper conductive layer 10 and the lower conductive layer 12.
• the portions of wafer 15 which form conductive surfaces 23 correspond to projections 16, as illustrated in FIG. 4.
• Each dielectric surface 22 is a part of the wafer 16 which is not electrically conductive, and in particular not covered by the conductive film 25.
• each dielectric surface 22 is a part of wafer 16 at which the dielectric layer 14 of the lateral substrate 8C, 8D delimits directly the cavity 20.
• Each dielectric surface 22 extends, along the vertical axis ZZ, between the upper conductive layer 10 and the lower conductive layer 12 of the corresponding lateral substrate 8C, 8D.
• the portions of the wafer 15 which form dielectric surfaces 22 correspond to recesses 17, as illustrated in FIG. 4.
• Each dielectric surface 22 is associated with a plurality of metallized holes 24, more commonly called “vias”, made in the corresponding lateral substrate 8C, 8D.
• Each via 24 extends along the vertical axis Z-Z, passing through the upper conductive layer 10, the dielectric layer 14 and the lower conductive layer 12 of the side substrate 8C, 8D.
• Each via 24 is made of an electrically conductive material and electrically connects the upper conductive layer 10 and the lower conductive layer 12 of the side substrate 8C, 8D therebetween.
• the corresponding vias 24 are transversely further away, along the transverse axis Y-Y, of the cavity 20 than said dielectric surface 22.
• the vias 24 are arranged along a path 26, two successive vias 24 along the path 26 being separated by a portion of the lateral substrate 8C, 8D, as illustrated in FIG. 4.
• Each path 26 forms an electrically conductive wall.
• the distance between two successive vias 24 is smaller than the smallest of the wavelengths of the electromagnetic waves intended to propagate in the microwave component 2, preferably less than or equal to one-fifth of the smallest of the wavelengths. electromagnetic waves intended to propagate in the microwave component 2, for example less than or equal to one-tenth of the smallest of the wavelengths of the electromagnetic waves intended to propagate in the microwave component 2.
• the distance, along the transverse axis Y-Y, between the dielectric surface 22 and the corresponding path 26 is a block width wi, as will be apparent from the description which follows.
• a majority of vias 24, called intermediate vias 241 are arranged to define a rectilinear segment 27 within the path 26.
• the rectilinear segment 27 is preferably parallel to the corresponding dielectric surface 22, as appears in Figure 4.
• the block width wi, taken as the distance between the dielectric surface 22 and the rectilinear segment 27 is constant along the axis of propagation XX.
• the rectilinear segment 27 has a length, along the axis of propagation X-X, equal to the length of resonator L.
• the vias 24 which are not intermediate vias are called “lateral vias 24L”.
• At least one lateral via 24L is arranged between said intermediate via 24 end and a portion closest to the conductive surface 23 closest, if it exists.
• the vias 24 delimit, with the lower conductive layer 12 of the upper substrate 8A and the upper conductive layer 10 of the lower substrate 8B, the propagation zone. More precisely, and as it appears in FIGS. 5 and 6, in any plane YZ, the propagation zone 5 is transversely delimited, along the vertical axis ZZ, by the lower conductive layer 12 of the upper substrate 8A, firstly, and the upper conductive layer 10 of the lower substrate 8B, on the other hand; in addition, the propagation zone is transversely delimited, along the transverse axis Y-Y, by each of the lateral substrates 8C, 8D, and more precisely:
• each compensation block 28 is associated with a respective dielectric surface 22, and is defined as the portion of the dielectric layer 14 of a lateral substrate 8C, 8D which is delimited:
• the block width wi between the dielectric surface 22 and the rectilinear segment 27 and, consequently, the position of the vias 24 relative to the corresponding dielectric surface 22, is determined in the same way as for the micro-component. Wave 2 of Figures 1 to 3.
• the microwave component 102 is a microwave bandpass filter.
• the center frequency is 21.018 GHz and the bandwidth at -3 dB (decibel) is 284 MHz. It is assumed in this example that such characteristics correspond to specifications required for the microwave component 102.
• the variation of the transmission coefficient of the filter, when the microwave component 102 has a temperature of -40 ° C is illustrated by the curve 42 (dotted line).
• the center frequency is 21.016 GHz and the bandwidth at -3 dB is 280 MHz.
• the variation of the transmission coefficient of the filter, when the microwave component 102 has a temperature of 80 ° C is illustrated by the curve 44 (broken line).
• the center frequency is 21.014 GHz and the bandwidth at -3 dB is 286 MHz.
• the value of the transmission coefficient is of the order of -1.1 dB.
• the value of the reflection coefficient, in the bandwidth is, at most, of the order of -20 dB.
• the variation of the central frequency, when the temperature of the microwave component 102 varies from -40 ° C. to 80 ° C., is therefore approximately 4 MHz.
• the variation of the transmission coefficient of a microwave component of the state of the art, called the "uncompensated component", as a function of the frequency of an electromagnetic wave applied to an input of said uncompensated component, for three distinct temperatures is illustrated in FIG. 8.
• the uncompensated component is devoid of a compensation device, and is designed to have, at the reference temperature, a frequency response substantially identical to the frequency response of the microwave component 102. , in particular a substantially equal transmission coefficient.
• curve 50 The variation of the transmission coefficient of the uncompensated component, when said component has a temperature of 23 ° C., is illustrated by curve 50 (solid line).
• the center frequency is 21.009 GHz and the bandwidth at -3 dB is 288 MHz.
• the variation of the transmission coefficient of the filter, when the uncompensated component has a temperature of -40 ° C is illustrated by the curve 52 (dotted line).
• the center frequency is 21.039 GHz and the bandwidth at -3 dB is 291 MHz.
• the variation of the transmission coefficient of the filter, when the uncompensated component has a temperature of 80 ° C is illustrated by the curve 54 (broken line).
• the center frequency is 21.982 GHz and the bandwidth at -3 dB is 288 MHz.
• the value of the transmission coefficient is of the order of -0.7 dB.
• the value of the reflection coefficient, in the bandwidth is, at most, of the order of -13 dB.
• the variation of the center frequency, when the temperature of the uncompensated component varies from -40 ° C to 80 ° C, for the uncompensated component is therefore about 57 MHz.
• the compensation device 6 integrated in the microwave components according to the invention significantly reduces the fluctuations of the frequency response of said microwave components with the temperature.
• a third embodiment of a microwave component 202 according to the invention will now be described, with reference to FIG. 9.
• the microwave component 202 of FIG. 8 differs from the microwave component 2 of FIGS. 1 to 3 in that it comprises a single substrate 8.
• the microwave component 202 is of the "waveguide integrated substrate” type.
• the microwave component 202 comprises two paths 26 vias 24 each extending along the axis of propagation X-X, and being away from each other along the transverse axis Y-Y.
• the propagation zone 5 is delimited transversely:
• cells 32 are formed within the propagation zone 5, in the dielectric layer 14 of the substrate 8.
• a compensation block 28 is arranged in each cell 32.
• each compensation block 28 occupies the entire volume of the cell 32.
• Each compensation block 28 is made of a dielectric material distinct from the dielectric material of the dielectric layer 14 and having a dielectric permittivity whose derivative with respect to the temperature, within a predetermined temperature range of interest, has a sign opposite to the sign at least one coefficient of thermal expansion of the dielectric material of the dielectric layer 14 of the substrate 8, in the range of interest.
• each compensation block 28 are determined as previously described, with the difference that the relative permittivity of the dielectric material of the dielectric layer is supposed to depend on the temperature, and to vary according to the relation:
• d e o is the derivative relative to the temperature of the relative permittivity r, o of the dielectric material of the dielectric layer 14.
• the microwave component is of the "coaxial line integrated into the substrate” type, or else of the "suspended line integrated into the substrate” type.
• the corresponding compensation blocks are arranged in a manner similar to the compensation blocks 28 of the microwave component. 2 of Figures 1 to 3, or the microwave component 102 of Figures 4 to 6.
• the corresponding compensation blocks 28 are arranged in a manner similar to the compensation blocks 28 of the micro-component. wave 202 of FIG. 9.

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