EP3721294A4 - Systeme und verfahren zur vorrichtungskorrelierten überlagerungsmetrologie - Google Patents

Systeme und verfahren zur vorrichtungskorrelierten überlagerungsmetrologie Download PDF

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Publication number
EP3721294A4
EP3721294A4 EP18886399.7A EP18886399A EP3721294A4 EP 3721294 A4 EP3721294 A4 EP 3721294A4 EP 18886399 A EP18886399 A EP 18886399A EP 3721294 A4 EP3721294 A4 EP 3721294A4
Authority
EP
European Patent Office
Prior art keywords
systems
methods
overlay metrology
correlated overlay
correlated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP18886399.7A
Other languages
English (en)
French (fr)
Other versions
EP3721294A1 (de
Inventor
Frank Laske
Ulrich Pohlmann
Stefan Eyring
Nadav GUTMAN
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KLA Corp
Original Assignee
KLA Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KLA Tencor Corp filed Critical KLA Tencor Corp
Publication of EP3721294A1 publication Critical patent/EP3721294A1/de
Publication of EP3721294A4 publication Critical patent/EP3721294A4/de
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electromagnetism (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Polyamides (AREA)
EP18886399.7A 2017-12-07 2018-12-06 Systeme und verfahren zur vorrichtungskorrelierten überlagerungsmetrologie Pending EP3721294A4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201762595987P 2017-12-07 2017-12-07
US16/009,939 US10474040B2 (en) 2017-12-07 2018-06-15 Systems and methods for device-correlated overlay metrology
PCT/US2018/064145 WO2019113262A1 (en) 2017-12-07 2018-12-06 Systems and methods for device-correlated overlay metrology

Publications (2)

Publication Number Publication Date
EP3721294A1 EP3721294A1 (de) 2020-10-14
EP3721294A4 true EP3721294A4 (de) 2021-09-01

Family

ID=66696697

Family Applications (1)

Application Number Title Priority Date Filing Date
EP18886399.7A Pending EP3721294A4 (de) 2017-12-07 2018-12-06 Systeme und verfahren zur vorrichtungskorrelierten überlagerungsmetrologie

Country Status (8)

Country Link
US (1) US10474040B2 (de)
EP (1) EP3721294A4 (de)
JP (1) JP7118152B2 (de)
KR (1) KR102435141B1 (de)
CN (1) CN111433676B (de)
SG (1) SG11202002413UA (de)
TW (1) TWI781259B (de)
WO (1) WO2019113262A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11914290B2 (en) * 2019-07-24 2024-02-27 Kla Corporation Overlay measurement targets design
US11221561B2 (en) * 2020-01-14 2022-01-11 Kla Corporation System and method for wafer-by-wafer overlay feedforward and lot-to-lot feedback control
CN111458984A (zh) * 2020-03-13 2020-07-28 华中科技大学 一种套刻标记及测量配置的分步优化方法
WO2021211154A1 (en) * 2020-04-15 2021-10-21 Kla Corporation Misregistration target having device-scaled features useful in measuring misregistration of semiconductor devices
US11460783B2 (en) * 2021-01-07 2022-10-04 Kla Corporation System and method for focus control in extreme ultraviolet lithography systems using a focus-sensitive metrology target
US11703767B2 (en) 2021-06-28 2023-07-18 Kla Corporation Overlay mark design for electron beam overlay
US11720031B2 (en) 2021-06-28 2023-08-08 Kla Corporation Overlay design for electron beam and scatterometry overlay measurements
US11862524B2 (en) 2021-06-28 2024-01-02 Kla Corporation Overlay mark design for electron beam overlay
EP4202552B1 (de) * 2021-12-24 2024-04-17 Imec VZW Verfahren und struktur zur bestimmung eines überlagerungsfehlers
TWI809931B (zh) * 2022-04-08 2023-07-21 南亞科技股份有限公司 具有疊對標記之半導體元件結構的製備方法

Citations (3)

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US6486954B1 (en) * 2000-09-01 2002-11-26 Kla-Tencor Technologies Corporation Overlay alignment measurement mark
WO2004090980A2 (en) * 2003-04-08 2004-10-21 Aoti Operating Company, Inc. Overlay metrology mark
EP3171396A1 (de) * 2015-11-18 2017-05-24 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Verfahren zur bestimmung eines überlagerungsfehlers, herstellungsverfahren und system zur herstellung eines mehrschichtigen halbleiterbauelements und dadurch hergestelltes halbleiterbauelement

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TW588414B (en) * 2000-06-08 2004-05-21 Toshiba Corp Alignment method, overlap inspecting method and mask
US7068833B1 (en) 2000-08-30 2006-06-27 Kla-Tencor Corporation Overlay marks, methods of overlay mark design and methods of overlay measurements
US7541201B2 (en) 2000-08-30 2009-06-02 Kla-Tencor Technologies Corporation Apparatus and methods for determining overlay of structures having rotational or mirror symmetry
EP1314198B1 (de) 2000-08-30 2017-03-08 KLA-Tencor Corporation Ausrichtsmarken, methoden zum entwurf von ausrichtmarken, und verfahren zum messen von ausrichtfehlern
US6432591B1 (en) * 2000-08-30 2002-08-13 Micron Technology, Inc. Overlay target design method with pitch determination to minimize impact of lens aberrations
US7317531B2 (en) 2002-12-05 2008-01-08 Kla-Tencor Technologies Corporation Apparatus and methods for detecting overlay errors using scatterometry
US20030002043A1 (en) 2001-04-10 2003-01-02 Kla-Tencor Corporation Periodic patterns and technique to control misalignment
US6949462B1 (en) * 2002-04-04 2005-09-27 Nanometrics Incorporated Measuring an alignment target with multiple polarization states
DE60314484T2 (de) * 2002-11-01 2008-02-21 Asml Netherlands B.V. Untersuchungsverfahren und Verfahren zur Herstellung einer Vorrichtung
DE10345466A1 (de) 2003-09-30 2005-04-28 Infineon Technologies Ag Verfahren zur Erfassung von Plazierungsfehlern von Schaltungsmustern bei der Übertragung mittels einer Maske in Schichten eines Substrats eines Halbleiterwafers
US7308368B2 (en) * 2004-09-15 2007-12-11 Asml Netherlands B.V. Method and apparatus for vibration detection, method and apparatus for vibration analysis, lithographic apparatus, device manufacturing method, and computer program
DE102005046973B4 (de) 2005-09-30 2014-01-30 Globalfoundries Inc. Struktur und Verfahren zum gleichzeitigen Bestimmen einer Überlagerungsgenauigkeit und eines Musteranordnungsfehlers
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US9214317B2 (en) 2013-06-04 2015-12-15 Kla-Tencor Corporation System and method of SEM overlay metrology
TWI544288B (zh) * 2014-04-14 2016-08-01 台灣積體電路製造股份有限公司 疊對度量方法
WO2016124393A1 (en) * 2015-02-04 2016-08-11 Asml Netherlands B.V. Metrology method and apparatus, computer program and lithographic system
CN106325001B (zh) * 2015-07-10 2019-01-22 中芯国际集成电路制造(上海)有限公司 套刻精度补偿方法及装置
WO2018004511A1 (en) 2016-06-27 2018-01-04 Kla-Tencor Corporation Apparatus and method for the measurement of pattern placement and size of pattern and computer program therefor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6486954B1 (en) * 2000-09-01 2002-11-26 Kla-Tencor Technologies Corporation Overlay alignment measurement mark
WO2004090980A2 (en) * 2003-04-08 2004-10-21 Aoti Operating Company, Inc. Overlay metrology mark
EP3171396A1 (de) * 2015-11-18 2017-05-24 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Verfahren zur bestimmung eines überlagerungsfehlers, herstellungsverfahren und system zur herstellung eines mehrschichtigen halbleiterbauelements und dadurch hergestelltes halbleiterbauelement

Non-Patent Citations (2)

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Title
KUIPER STEFAN ET AL: "Large dynamic range Atomic Force Microscope for overlay improvements", PROCEEDINGS OF SPIE; [PROCEEDINGS OF SPIE ISSN 0277-786X VOLUME 10524], SPIE, US, vol. 9778, 8 March 2016 (2016-03-08), pages 97781B - 97781B, XP060065285, ISBN: 978-1-5106-1533-5, DOI: 10.1117/12.2218249 *
See also references of WO2019113262A1 *

Also Published As

Publication number Publication date
US10474040B2 (en) 2019-11-12
TW201935148A (zh) 2019-09-01
SG11202002413UA (en) 2020-06-29
EP3721294A1 (de) 2020-10-14
JP2021505959A (ja) 2021-02-18
KR20200086748A (ko) 2020-07-17
KR102435141B1 (ko) 2022-08-22
JP7118152B2 (ja) 2022-08-15
CN111433676A (zh) 2020-07-17
WO2019113262A1 (en) 2019-06-13
CN111433676B (zh) 2022-08-05
TWI781259B (zh) 2022-10-21
US20190179231A1 (en) 2019-06-13

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