EP3701568A4 - Elektronentransport-gate-schaltungen und herstellungsverfahren, betrieb und verwendung - Google Patents

Elektronentransport-gate-schaltungen und herstellungsverfahren, betrieb und verwendung Download PDF

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Publication number
EP3701568A4
EP3701568A4 EP18869562.1A EP18869562A EP3701568A4 EP 3701568 A4 EP3701568 A4 EP 3701568A4 EP 18869562 A EP18869562 A EP 18869562A EP 3701568 A4 EP3701568 A4 EP 3701568A4
Authority
EP
European Patent Office
Prior art keywords
manufacture
methods
electron transport
gate circuits
transport gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP18869562.1A
Other languages
English (en)
French (fr)
Other versions
EP3701568A1 (de
Inventor
Christopher J. Rourk
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of EP3701568A1 publication Critical patent/EP3701568A1/de
Publication of EP3701568A4 publication Critical patent/EP3701568A4/de
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/122—Single quantum well structures
    • H01L29/127—Quantum box structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66977—Quantum effect devices, e.g. using quantum reflection, diffraction or interference effects, i.e. Bragg- or Aharonov-Bohm effects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/20—Organic diodes
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/04—Architecture, e.g. interconnection topology
    • G06N3/045—Combinations of networks
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
    • G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
    • G06N3/065—Analogue means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0814—Diodes only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
EP18869562.1A 2017-10-29 2018-10-29 Elektronentransport-gate-schaltungen und herstellungsverfahren, betrieb und verwendung Pending EP3701568A4 (de)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201762578483P 2017-10-29 2017-10-29
US201762581766P 2017-11-05 2017-11-05
US201762584898P 2017-11-12 2017-11-12
US201762590632P 2017-11-26 2017-11-26
US201862614412P 2018-01-06 2018-01-06
US201862641382P 2018-03-11 2018-03-11
PCT/US2018/057959 WO2019084537A1 (en) 2017-10-29 2018-10-29 ELECTRON TRANSPORT DOOR CIRCUITS AND METHODS OF MANUFACTURE, OPERATION AND USE

Publications (2)

Publication Number Publication Date
EP3701568A1 EP3701568A1 (de) 2020-09-02
EP3701568A4 true EP3701568A4 (de) 2021-08-04

Family

ID=66247050

Family Applications (1)

Application Number Title Priority Date Filing Date
EP18869562.1A Pending EP3701568A4 (de) 2017-10-29 2018-10-29 Elektronentransport-gate-schaltungen und herstellungsverfahren, betrieb und verwendung

Country Status (3)

Country Link
EP (1) EP3701568A4 (de)
CN (1) CN111357118A (de)
WO (1) WO2019084537A1 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021082130A (ja) * 2019-11-21 2021-05-27 株式会社日立製作所 電子回路、ニューラルネットワーク及びニューラルネットワークの学習方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE9403950D0 (sv) * 1994-11-16 1994-11-16 Siemens Elema Ab Analysapparat
US7671398B2 (en) * 2005-02-23 2010-03-02 Tran Bao Q Nano memory, light, energy, antenna and strand-based systems and methods
US9065253B2 (en) * 2009-05-13 2015-06-23 University Of Washington Through Its Center For Commercialization Strain modulated nanostructures for optoelectronic devices and associated systems and methods
ES2370359B1 (es) * 2009-12-11 2013-02-13 Universidad De Granada Nanoestructuras multifuncionales como agentes de diagnosis trimodal mri-oi-spect.
EP2883835B1 (de) * 2012-08-06 2020-07-15 Technical Institute of Physics and Chemistry of the Chinese Academy of Sciences Verfahren zur herstellung von heteroatom-dotierten multifunktionellen quantenpunkten
JP6389685B2 (ja) * 2014-07-30 2018-09-12 キヤノン株式会社 撮像装置、および、撮像システム
MX2021007934A (es) * 2014-08-08 2023-01-17 Quantum Si Inc Dispositivo integrado para el depósito temporal de fotones recibidos.
JP2017538474A (ja) * 2014-11-18 2017-12-28 ナンヤン テクノロジカル ユニヴァーシティＮａｎｙａｎｇ Ｔｅｃｈｎｏｌｏｇｉｃａｌ Ｕｎｉｖｅｒｓｉｔｙ 血糖モニタリングのためのサーバ装置およびウェアラブル・デバイス、ならびに関連する方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
No further relevant documents disclosed *

Also Published As

Publication number Publication date
WO2019084537A1 (en) 2019-05-02
CN111357118A (zh) 2020-06-30
EP3701568A1 (de) 2020-09-02

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