Classifications

• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B82—NANOTECHNOLOGY
  • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
  • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
  • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
  • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
  • H01L29/122—Single quantum well structures
  • H01L29/127—Quantum box structures
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
  • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
  • H01L29/66977—Quantum effect devices, e.g. using quantum reflection, diffraction or interference effects, i.e. Bragg- or Aharonov-Bohm effects
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
  • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
  • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
  • H10K10/20—Organic diodes
• • G—PHYSICS
  • G06—COMPUTING; CALCULATING OR COUNTING
  • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
  • G06N3/00—Computing arrangements based on biological models
  • G06N3/02—Neural networks
  • G06N3/04—Architecture, e.g. interconnection topology
  • G06N3/045—Combinations of networks
• • G—PHYSICS
  • G06—COMPUTING; CALCULATING OR COUNTING
  • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
  • G06N3/00—Computing arrangements based on biological models
  • G06N3/02—Neural networks
  • G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
  • G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
  • G06N3/065—Analogue means
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
  • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
  • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
  • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
  • H01L27/0814—Diodes only
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
  • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
  • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
  • H01L29/861—Diodes

Definitions

• the present disclosure relates generally to electric circuits, and more specifically to electron transport gated circuits that use quantum coherence or other electron transport mechanisms to actuate a gate circuit.
• Arrays of quantum dots form electron minibands that provide electron transport through the array.
• QDs quantum dots
• These quantum dots can be dispersed in bulk conjugated polymers to create a nanocomposite material with improved characteristics.
• U.S. 9,349,888 B2 which is hereby incorporated by reference for all purposes as if set forth herein in its entirety.
• the use of such electron transport mechanisms in ensembles of devices is not known.
• conjugated polymer nanoparticles for QD applications. See U.S. 2016/0161475 Al, which is hereby incorporated by reference for all purposes as if set forth herein in its entirety. However, formation of arrays of conjugated polymer nanoparticles with inorganic QDs is not known.
• a circuit includes a first electrode, a second electrode and a plurality of quantum dot devices disposed between the first electrode and the second electrode.
• An impedance is coupled to the second electrode and has a value selected to conduct or block conduction of current when a coherent electron conduction band is formed by one or more of the quantum dot devices, such as with external quantum dot devices.
• FIGURE 1 is a diagram of a circuit for switching using electron transport, in accordance with an example embodiment of the present disclosure
• FIGURE 2 is a diagram of multiple QD configurations in accordance with an example embodiment of the present disclosure
• FIGURE 3 is a diagram of an electron transport (ET) gate circuit with an associated impedance network, in accordance with an example embodiment of the present disclosure
• FIGURE 4 is a diagram of a system for coupled electron transport devices, in accordance with an example embodiment of the present disclosure
• FIGURE 5 is a diagram of a system for coupled electron transport devices with neural network control, in accordance with an example embodiment of the present disclosure.
• FIGURE 6 is a diagram of a node output register with voltage and impedance control, in accordance with an example embodiment of the present disclosure.
• FIGURE 1 is a diagram of a circuit 100 for switching using electron transport, in accordance with an example embodiment of the present disclosure.
• Circuit 100 includes electron transport device 102 and electron transport device 104, which are fabricated from quantum dots (QDs) and other components, as discussed further herein. These devices can be of similar design and are described herein as electron transport device 102/104, with associated components of each device described in a similar manner.
• QDs are selected from suitable materials, and are sized and spaced to create electron transport mechanisms, such as electron minibands, electron hopping, coherent tunneling and other suitable electron transport mechanisms, as discussed above.
• QDs can include a single layer or multiple layers of inorganic QDs, a layer of inorganic QDs on the bottom layer and a layer of organic QDs on the top layer (also referred to herein as conjugated polymer nanoparticles (CPNPs) but not limited to conjugated polymer materials), one or more layers of mixed inorganic QDs, one or more layers of mixed organic QDs, one or more layers of mixed inorganic and organic QDs, alternating layers of organic QDs and inorganic QDs, other suitable configurations of organic QDs, inorganic QDs, mixtures of organic and inorganic QDs, combinations of QDs and different materials or structures, or other suitable materials or structures that create electron transport between electron transport devices.
• Space 134 between QDs can be air, a conjugated polymer, ligands, a combination of these or other materials, or other suitable materials.
• Electron transport devices 102/104 includes lead 106/122 to anode 108/124, and lead 112/130 to cathode 110/126. QDs or CPNPs are disposed between anode 108/124 and cathode 110/126. An impedance 116/132 is coupled in series with lead 112/130, and a piezoelectric device 114/128 can be provided to apply a force vector to the QDs and/or CPNPs of electron transport device 102/104, such as to facilitate localization of electrons or other quantum mechanical effects.
• Lead 106/122, anode 108/124, lead 112/130 and cathode 110/126 can be formed by vapor deposition technology, monocrystalline wafer technology, microforming, etching or other suitable processes, using gold, aluminum, semiconductor materials, conductive oxide or other suitable materials, such as to form an electron transport device having linear conduction characteristics, Schottky conduction characteristics, diode conduction characteristics or other suitable electrical conduction characteristics.
• the inner surface of anode 108 and cathode 110 can be coated with patterned polymer or organic materials that are also used to form QDs that are conjugated polymer nanoparticles (CPNPs), such as poly (p-phenylene ethynylene)s (PPEs), poly (p-phenylene vinylene)s (PPVs), trioctylphosphine oxide (TOPO), poly-(3-hexylthiophene) (P3HT), polyaniline, polypyrole, materials that attract ligands such as oleic acids or other materials that are used to passivate the surface of QDs or other suitable materials, which can be patterned as needed to attract different types of QDs or CPNPs.
• CPNPs conjugated polymer nanoparticles
• PPEs poly (p-phenylene ethynylene)s
• PVs poly (p-phenylene vinylene)s
• TOPO trioctylphosphine
• a suitable mask can be used to coat selected portions of the inner surfaces of anode 108/124 and cathode 110/126 with suitable inorganic, polymer or organic materials, so as to facilitate arrangements of QDs and CPNPs such as those disclosed herein that improve the formation of electron minibands or other electron transport mechanisms.
• Impedance 116/132 can be a fixed or variable impedance that is used to control a current flow from electron transport device 102/104.
• the value of impedance 116/132 can be resistive, inductive, capacitive, a suitable combination of resistive, inductive and capacitive components in series and/or parallel, a variable impedance, a controllably variable impedance or other suitable types of impedance.
• Piezoelectric device 114/128 can create a force vector that causes the QDs and/or CPNPs of electron transport device 102/104, respectively, to undergo a mechanical force, such as a stress, an acceleration, a compression or other suitable forces.
• Piezoelectric device 114/128 can be disposed in a suitable location and orientation so as to apply or create the force vector in a predetermined orientation to an electric field vector created by the electric field components of anode 108/124 and cathode 110/126, respectively, such as an orthogonal vector orientation between the force and electric field vector or other suitable combinations of vectors.
• Insulators 118 and 120 mechanically connect electron transport device 102 and electron transport device 104, and contain additional QDs and/or CPNPs. Insulators 118 and 120 and their associated QDs and/or CPNPs can be omitted, such as where sufficient coupling exists between one or more external electron transport devices and electron transport devices 102 and 104, such as where the external electron transport devices are used as a probe or sensor to interface with electron transport devices 102 and 104, and to measure a signal generated by the electron transport mechanism of electron transport devices 102 and 104.
• the external electron transport device can be used in vivo to interface with an array of QDs that are disposed within one or more cells, including but not limited to naturally occurring QDs such as ferritin and neuromelanin and fabricated semiconductor QDs, to modify the characteristic of the electron transport mechanism, to measure a time varying electron transport signal generated by such an array, or for other suitable purposes.
• the measurement of the signal generated by the electron transport mechanism can include impedance matching an effective impedance of the electron transport mechanism, use of an impedance that is selected to prevent disruption of the electron transport mechanism or other suitable circuit configurations to optimize measurement.
• the external electron transport devices can be placed so as to manipulate the electron transport mechanism of suitable electron transport devices in a predetermined manner, so as to modify the electron transport mechanism to increase or decrease a local effect, to increase or decrease a global effect or for other suitable purposes.
• the placement and electrical parameters of the external electron transport devices relative to electron transport devices 102 and 104 or other suitable electron transport devices can be determined by solution of the Kronig-Penney and Schroedinger-Poisson equations for the system.
• the QDs and CPNPs of circuit 100 create electron transport mechanisms through the generation of excitons, and conduct current based on the design of electron transport devices 102 and 104.
• electron transport devices 102 and 104 can apply electric fields and forces that cause excitons to form in the QDs, where the excitons form electron minibands, electron hopping, coherent tunneling or other suitable electron transport mechanisms.
• the electrons can be made to localize in one of electron transport devices 102 or 104 by controlling the applied electric field, the applied force, the values of impedances 116 and 132 or other suitable circuit parameters of circuit 100.
• electrons can localize in the electron transport device 102 or 104 that has a lowest associated impedance 116 or 132, respectively, and may otherwise remain non-localized if the impedances 116 and 132 are equal and the applied electric field or the electric field and/or force vectors are not sufficient to cause localization.
• the specific voltage levels and forces can be determined by iteratively solving the Kronig-Penney and Schroedinger-Poisson equations for the system, such as set forth in U.S. patent 6,829,269, U.S. Patent 7,026,641 and U.S.
• Patent 6,627,809 each of which is hereby incorporated by reference for all purposes as if set forth herein in its entirety, as well as by determining the associated circuit parameters for the circuit based on the physical design, material properties, voltage levels and other parameters of the circuit, such set forth in U.S. 5,608,231 and U.S. 6,489,041 and U.S. Patent Application publication 2007/0162263 Al, each of which is hereby incorporated by reference for all purposes as if set forth herein in its entirety.
• the electron transport between electron transport devices 102 and 104 can be used to conduct electrons through one of electron transport devices 102 and 104 (where a linear configuration is used) or to switch one of electron transport devices 102 and 104 on (where nonlinear diode/Shottky configuration is used) as a function of the value of the applied voltages, force vectors and values of impedances 116 and 132 of electron transport devices 102 and 104, respectively.
• the excitation vectors of electron transport devices 102 and 104 can be varied by changing the values of V+ applied to anodes 1008 and 124, where the anode with the higher applied electric field can result in localization of electrons from the electron mini-band.
• force vectors or other variables can be modified.
• Circuit 100 can be extended from two electron transport devices 102 and 104 to a large number of electron transport devices, so long as the electron transport parameters result in suitable electron transport characteristics to support electron transport switching.
• the materials of anodes 108 and 124 and cathodes 110 and 126 can be selected to create a Shottky diode, by using materials such as indium tin oxide (ITO) and aluminum, gold and aluminum or other suitable combinations, such as disclosed in U.S. 8,574,685 Bl, which is hereby incorporated by reference for all purposes as if set forth herein in its entirety.
• ITO indium tin oxide
• aluminum gold and aluminum or other suitable combinations, such as disclosed in U.S. 8,574,685 Bl, which is hereby incorporated by reference for all purposes as if set forth herein in its entirety.
• the localization of electrons in one of the electron transport devices 102 or 104 drives that device into conduction mode, and thus increases the current associated with localization, which would otherwise potentially be of a lower magnitude and more difficult to detect.
• the Schottky diode structure can be used to both amplify the current and to increase the sensitivity of the electron transport devices 102 and 104.
• the bias level of electron transport devices 102 and 104 can be lowered where suitable, either uniformly or separately.
• a transistor configuration can eb used where suitable by providing a control term and a control voltage, such as at an intermediate location between the anode and cathode or in other suitable manners.
• the applied voltage levels can be selected to generate electron minibands, using materials that create excitons at the applied voltage levels.
• the specific voltage levels needed to generate electron minibands can be determined by solving the Schrodinger equation for the Kronig-Penney potential, as a function of the material properties and spacings selected for the quantum dots and associated materials such as conjugated polymer matrix of electron transport devices 102 and 104. Additional examples of similar materials and structures are disclosed in U.S. Patent Application publication 2007/0162263 Al, except that the semiconductor material selected for the quantum dots of the present disclosure may advantageously include an indirect bandgap instead of a direct bandgap, so as to prevent the generation of photons and corresponding loss of energy.
• a controllable voltage bias source such as that shown in FIGURE 4 as miniband control 402 or 404 can be used to empirically determine the excitation levels associated with electron transport. Such control of voltage levels can be used to accommodate variations in spacing and material properties of quantum dots and components of electron transport devices 102/104.
• FIGURE 2 is a diagram of multiple QD/CPNP configurations 200 in accordance with an example embodiment of the present disclosure.
• QD configurations 202 through 218 include different combinations of QDs formed from different materials, such as neuromelanin or other polymers, ferritin or other proteins, a semiconductor (silicon, germanium, cadmium, cadmium sulfide, cadmium selenide, indium, diamond, pyrite, boron nitride, gallium arsenide, aluminum gallium arsenide, copper(I) oxide, amorphous silicon, graphene, zinc oxide, silicon carbide, gallium manganese arsenide, copper(II) chloride, gallium nitride, copper indium gallium selenide, copper(II) oxide, black silicon, uranium dioxide, mercury cadmium telluride, molybdenum, molybdenum disulfide, iron(II, III) oxide, tin dioxide, cadmi
• organic materials such as CPNPs, PPE, PPV, TOPO, P3HT or other suitable materials can be used to form organic quantum dots (OQD) in FIGURE 2, including materials used for ligand passivation layers or other suitable additional materials. While these are generally shown in QD configurations 200 as inorganic quantum dots (IQDs) and OQDs, certain multilayer QDs such as ferritin or ligand passivated QDs could be classified as either an IQD or OQD, depending on the other OQDs and IQDs used. Two or more different IQDs or OQDs can also or alternatively be used. In order to facilitate creation of electron transport, the IQDs and/or OQDs can have indirect bandgaps to prevent energy from being transformed into photons instead of causing electron transport and conduction.
• IQDs inorganic quantum dots
• OQDs organic quantum dots
• the IQDs and/or OQDs can have indirect bandgaps to prevent energy from
• each quantum dot shown in electron transport devices 102 and 104 can be replaced by quantum dots having configurations shown in 202 through 218, such that the number of quantum dots disposed between the anodes 108/124 and cathodes 110/126 can be varied from the example embodiments shown.
• other materials such as solid or amorphous configurations of conjugated polymers can be used to fill the space between IQDs, combinations of OQDs and IQDs or other suitable materials.
• FIGURE 3 is a diagram of an electron transport (ET) gate circuit 300 with an associated impedance network, in accordance with an example embodiment of the present disclosure.
• ET gate circuit 300 includes ET device 302, two primary gated resistances Rl and R2, which are gated by Tl and T2, and which drive the gates of T3 and T4.
• R2 is T5 through T16, which gate R3 through R8 and which are actuated by R3 through R8 (e.g. R3 is gated by T10 and drives the gate of Tl 1
• R4 is gated by T9 and drives the gate of T9, and so forth).
• This circuit can be used with ET devices and associated output impedances in an array of ET devices that form an ET gate, and can be used to both select the ET device that will be actuated based on a lowest impedance, and can also generate additional indicators or actuate additional circuits by gate voltages applied to transistors T3, T4 and Ti l through T16, where suitable (transistors T3, T4 and Tl 1 through T16 and associated circuitry that may use indicators/controls can also or alternatively be omitted). Additional layers of switched impedances can also or alternatively be provided, such as to increase the selectivity of the ET gate relative to other gates.
• N ET gates where N is an integer
• a similar circuit with the same or other suitable combinations of impedances, actuating gates and drivers can also or alternatively be used.
• resistances are shown for simplicity, other suitable combination of linear, non-linear, passive or active impedances can also or alternatively be used.
• the gate voltages applied to Tl, T2 and T5-T10 can be controlled by a suitable controller to adjust the impedance seem by ET device 302 as a function of external variables, such as where a similar configuration is used for a large number of ET devices that are coupled by an electron transport mechanism.
• the ET device that operates can be determined by a large number of parallel processes operating independently or with a complex non-linear relationship, such as a feedback controller, a neural network or other suitable control arrangements.
• the output of the neural network can include a plurality of digital registers that are used to select which of transistors Tl, T2 and T5-T10 (or other suitable transistors of other coupled ET devices), where the actuation of one of the ET devices is used as a feedback signal to the neural network, actuates one or more external circuits or devices that generate signals that are provided as inputs to the neural network, or other suitable configurations can also or alternatively be used.
• FIGURE 4 is a diagram of a system 400 for coupled electron transport devices, in accordance with an example embodiment of the present disclosure.
• System 400 includes electron transport switches 406 and 408, which are shown connected in series by conductors.
• electron transport switches 406 and 408 can be coupled by one or more capacitive connections, one or more inductive connections, a suitable combination of capacitive, inductive and/or resistive connections or in other suitable manners.
• additional electron transport devices, electron transport switches or other suitable electron transport structures can be coupled to one or both of electron transport switches 406 and 408 in such manners, where the coupling provides a modification to an input to one or more electron transport device, one or more impedance, or a combination of electron transport device inputs and associated impedances to affect operation of electron transport switches 406 and/or 408.
• Electron transport switch 406 includes electron transport devices ET11 through ET1N, which are constructed similar to electron transport devices 102 or 104 or other suitable devices, and which are separated from each other by barriers B, and which have corresponding variable or fixed impedances Sl l through SIN.
• Barriers B can be quantum dot arrays, insulators, other quantum devices or other suitable non-metallic structures that functionally separate electron transport devices ET11 through ET1N from each other.
• Electron transport switch 408 includes electron transport devices ET21 through ET2N, which are constructed similar to electron transport devices 102 or 104 or other suitable devices, and which are separated from each other by barriers B, and which have corresponding variable or fixed impedances S21 through S2N.
• Barriers B can be quantum dot arrays, insulators, other quantum devices or other suitable non- metallic structures that functionally separate electron transport devices ET21 through ET2N from each other.
• Miniband controls 402 and 404 are used to control the applied voltage to electron transport switches 406 and 408, respectively, to control the formation of electron minibands or other electron transport mechanisms.
• the state of electron transport devices ET11 through ET1N, electron transport devices ET21 through ET2N, impedances Sl l through SIN and impedances S21 through S2N determine whether electron minibands form in electron transport switches 406 and 408 and the conductive path taken by electrons in the electron minibands. Because the electrons will localize at a corresponding electron transport device that provides the lowest impedance path, the state of electrons in electron transport switches 406 and 408 is a function of the electron transport device inputs, outputs and associated impedances.
• the number and arrangement of electron transport devices ET11 through ET1N, electron transport devices ET21 through ET2N, and the values of impedances Sl l through SIN and impedances S21 through S2N can be selected to model an analog system, such as to find an optimal routing, to solve a quantum algorithm or for other suitable purposes.
• Miniband controls 402 and 404 can be implemented in hardware or a suitable combination of hardware and software, and are configured to control the applied bias voltage to electron transport switches 406 and 408, respectively. As previously discussed, by adjusting the applied bias voltage, the sensitivity of electron transport switches 406 and 408 can be increased or decreased. Miniband controls 402 and 404 can modify the bias voltage for all electron transport devices ETl l through ETIN and electron transport devices ET21 through ET2N, for individual electron transport devices ETl l through ETIN and electron transport devices ET21 through ET2N or can perform other suitable functions.
• a bias voltage of selected electron transport devices ETl l through ETIN and electron transport devices ET21 through ET2N can be increased, to increase the sensitivity of thse electron transport devices, while the bias voltage of others of electron transport devices ETl l through ETIN and electron transport devices ET21 through ET2N can be decreased, to reduce their sensitivity. In this manner, a large input to the electron transport device that has a lower bias voltage can still cause activation of that device when the input to other electron transport devices with higher bias voltages is not sufficient to actuate those devices.
• the adjustment of the bias voltages can be in response to external systems settings, such as to prevent operation of safety systems in the event of low-level transients while still allowing those safety systems to operate in the event that a signal having a value that is greater than a predetermined threshold for that electron transport device is received.
• FIGURE 5 is a diagram of a system 500 for coupled electron transport devices with neural network control, in accordance with an example embodiment of the present disclosure.
• System 500 includes neural network 502, which is coupled to electron transport switch 406, and electron transport switch 408, which is connected in series to electron transport switch 406 through neural network 504.
• Electron transport switches 406 and 408 can also be coupled by one or more capacitive connections, one or more inductive connections, a suitable combination of capacitive, inductive and/or resistive connections or in other suitable manners.
• Neural networks 502 and 504 can be constructed in accordance with the disclosure of U.S.
• Neural networks 502 and 504 include a plurality of nodes Nl through Nln, N2 through N2n and Nn through Nnn, arranged in a network (explicitly shown in 502), such as in stages of nodes, where each node can include data memory and can be configured to perform an associated function, and can store state data. Likewise, the nodes can have other suitable functions.
• Neural network 502 receives inputs 506, and controls the inputs to electron transport devices ET11 through ET1N, which are constructed similar to electron transport devices 102 or 104 or other suitable devices, and which are separated from each other by barriers B, and which have corresponding variable or fixed impedances SI 1 through SIN.
• Neural network 502 can also be coupled to one or more of the variable or fixed impedances Sl l through SIN, and can adjust the values of one or more of the variable impedances.
• Barriers B can be quantum dot arrays, insulators, other quantum devices or other suitable non-metallic structures that functionally separate electron transport devices ET11 through ET1N from each other.
• Neural network 502 also receives one or more feedback signals from the output of electron transport switch 406 and/or 408.
• the feedback signals can be provided from predetermined nodes of one neural network to other nodes of the same neural network, from predetermined nodes of one neural network to nodes of a different neural network, from the output nodes of one neural network to nodes of the same or a different neural network, from the outputs of electron transport switches 406 and/or 408 to nodes of the same or a different neural network, or in other suitable manners.
• Neural network 504 receives inputs 508 as well as inputs from electron transport switch 402, and controls the inputs to electron transport switch 408 including electron transport devices ET21 through ET2N, which are constructed similar to electron transport devices 102 or 104 or other suitable devices, and which are separated from each other by barriers B, and which have corresponding variable or fixed impedances S21 through S2N.
• Neural network 502 is coupled to one or more of the variable or fixed impedances S21 through S2N, and can adjust the values of one or more of the variable impedances.
• Barriers B can be quantum dot arrays, insulators, other quantum devices or other suitable non-metallic structures that functionally separate electron transport devices ET21 through ET2N from each other.
• Miniband controls 402 and 404 are used to control the applied voltage to electron transport switches 406 and 408, respectively, through neural networks 502 and 504, respectively.
• the output nodes of neural networks 502 and 504 can include an output (e.g. digital 1 or 0) that is used to determine whether the voltage from miniband controls 402 and 404 are to be applied to a specific electron transport devoice (ET11 through ET1N or ET21 through ET2N), a multiple bit output to determine the voltage level to be applied, or to provide other suitable functions to control the formation of electron minibands or other electron transport mechanisms.
• Neural network 504 also receives one or more feedback signals from the output of electron transport switch 404, and can work in coordination with neural network 502 to control one or more variable impedances and electron transport device inputs.
• the state of neural networks 502 and 504 determine whether electron minibands form in electron transport switches 406 and 408 and the conductive path taken by electrons in the electron minibands. Because the electrons will localize at a corresponding electron transport device that provides the lowest impedance path, the state of electrons in electron transport switches 406 and 408 is a function of the electron transport device inputs, outputs and associated impedances.
• neural networks 502 and 504 The training of neural networks 502 and 504 and the number and arrangement of electron transport devices ET11 through ET1N, electron transport devices ET21 through ET2N, and the values of impedances Sl l through SIN and impedances S21 through S2N can be selected to model an analog system, such as to find an optimal routing, to solve a quantum algorithm or for other suitable purposes.
• Neural networks 502 and 504 can be configured to control the voltage applied to electron transport devices ET11 through ET1N and electron transport devices ET21 through ET2N, and the values of impedances Sl l through SIN and impedances S21 through S2N, such as by providing additional input switching devices to those components that are controlled by neural networks 502 and 504.
• one or more outputs of switches Sl l through SIN and S21 through S2N can be used to control an external system or apparatus, such as where the inputs to neural networks 502 and 504 can include optical inputs and the output or outputs are used to control movement of a robotic system by controlling a motor, where the inputs include process variable measurements and the outputs are used to control operation of processes-related equipment or other suitable devices.
• system 500 can be used to select a single optimal output from a plurality of different options, where each option has an associated impedance and the output with the lowest impedance is the optimal output.
• System 500 thus effectively allows multiple parallel paths to be modelled using neural networks 502 and 504, where neural network 504 can provides state continuity or state memory functionality relative to the outputs of neural network 504.
• additional neural networks and electron transport switches can also or alternatively be provided in series or parallel with the components of system 500 for additional state control in more complex systems.
• U.S. 6,324,532 which is hereby incorporated by reference for all purposes as if set forth herein in its entirety, a pyramid of neural networks having a "coarse to fine" processing structure is disclosed. The present disclosure can be used in conjunction with U.S. 6,324,532 and the feedback mechanism disclosed in U.S.
• neural network 502 can be used to generate motion control to select an object
• neural network 504 can be used to determine whether the selected object was the correct object to select based on the input criteria.
• Nodes 1002, 1012, 1070, 1074 and so forth of Figures 10, 10A and other figures of U.S. 9, 129,221 can be used as nodes in neural networks 502 and 504, and can be coupled between neural networks 502 504 to provide feedback connections.
• the feedback connections between nodes of the neural networks of Figures 10, 11 and 12 of U.S. 6,324,532 can be feedback coupled to other neural networks, such as in the manner shown by neural networks 502 and 504 of Figure 5, or other suitable functions can also or alternatively be implemented.
• the inputs 506 and 508 can represent different sensory data inputs, state data inputs, motor control data inputs and other suitable inputs, so as to effectively form a plurality of sensory circuits, state circuits, motor control circuits and other suitable circuits in conjunction with the separate nodes of neural networks 502 and 504.
• inputs 506 and 508 can include common inputs to neural networks 502 and 504, outputs of neural networks 502 and 504, outputs of other neural networks or other suitable inputs.
• mapped image data can be provided as one or more of inputs 506 and 508, and can also be provided as one or more inputs to electron transport devices ET11 through ET1N and electron transport devices ET21 through ET2N, so as to allow neural networks 502 and 504 to be trained to recognize image data of objects, where the inputs to electron transport devices ET11 through ET1N and electron transport devices ET21 through ET2N from the mapped image data reinforce the associated outputs of neural networks 502 and 504 that are associated with the identity and logical import of the object associated with the periphery image data signals.
• the mapped image data signals can be processed by neural networks 502 and 504 to generate outputs associated with a cube, a sphere and a pyramid, and in conjunction with an additional input identifying the object to be picked up, the associated mapped outline can be used to activate electron transport devices ET11 through ET1N and electron transport devices ET21 through ET2N to generate an electron transport mechanism and to actuate the one of electron transport devices ET11 through ET1N and electron transport devices ET21 through ET2N associated with the motor control to pick up the corresponding object.
• electron transport devices ET11 through ET1N and electron transport devices ET21 through ET2N cause the mapped image data inputs to be associated with the neural network outputs that identify the object as a cube, sphere or pyramid, the neural network outputs used to actuate a control to pick up the cube, sphere or pyramid and other suitable inputs to electron transport devices ET11 through ET1N and electron transport devices ET21 through ET2N and neural networks 502 and 504, and outputs of neural networks 502 and 504.
• a node output register can be used to generate a plurality of different inputs to electron transport devices ET11 through ET1N and electron transport devices ET21 through ET2N from the output nodes of neural networks 502 and 504.
• FIGURE 6 is a diagram 600 of a node output register 604 with voltage and impedance control, in accordance with an example embodiment of the present disclosure.
• Node 602 of a neural network is coupled to node output register 604, and provides a 7 bit value to node output register 604, or other suitable numbers of bits.
• two bits are provided to voltage control 606, and five bits are provided to impedance control 608, where a suitable arrangement of transistors, logic gates or other devices can be used to generate control signals for controlling a voltage applied to an electron transport device, and impedance at the output of the electron transport device, to provide an output that can be compared to an expected value (such as during training), to provide a control output for controlling an external device, to provide an input to an electron transport switch and for other suitable purposes.
• “hardware” can include a combination of discrete components, an integrated circuit, an application-specific integrated circuit, a field programmable gate array, or other suitable hardware.
• "software” can include one or more objects, agents, threads, lines of code, subroutines, separate software applications, two or more lines of code or other suitable software structures operating in two or more software applications, on one or more processors (where a processor includes one or more microcomputers or other suitable data processing units, memory devices, input-output devices, displays, data input devices such as a keyboard or a mouse, peripherals such as printers and speakers, associated drivers, control cards, power sources, network devices, docking station devices, or other suitable devices operating under control of software systems in conjunction with the processor or other devices), or other suitable software structures.
• software can include one or more lines of code or other suitable software structures operating in a general purpose software application, such as an operating system, and one or more lines of code or other suitable software structures operating in a specific purpose software application.
• the term “couple” and its cognate terms, such as “couples” and “coupled,” can include a physical connection (such as a copper conductor), a virtual connection (such as through randomly assigned memory locations of a data memory device), a logical connection (such as through logical gates of a semiconducting device), other suitable connections, or a suitable combination of such connections.
• data can refer to a suitable structure for using, conveying or storing data, such as a data field, a data buffer, a data message having the data value and sender/receiver address data, a control message having the data value and one or more operators that cause the receiving system or component to perform a function using the data, or other suitable hardware or software components for the electronic processing of data.
• the quantum mechanical effects such as the formation of electron minibands, entanglement, coherence, tunneling and so forth as based on potential mechanisms that could be present in the SN and LC neurons, but to the extent that a different quantum mechanical effect is responsible for the transfer of energy between QS gates using the same disclosed structures and materials, the present disclosure is intended to encompass such effects.

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• 2018
  • 2018-10-29 EP EP18869562.1A patent/EP3701568A4/de active Pending
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