CN111357118A - 一种电子传递门电路及其制造、操作和使用方法 - Google Patents

一种电子传递门电路及其制造、操作和使用方法 Download PDF

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Publication number
CN111357118A
CN111357118A CN201880070919.4A CN201880070919A CN111357118A CN 111357118 A CN111357118 A CN 111357118A CN 201880070919 A CN201880070919 A CN 201880070919A CN 111357118 A CN111357118 A CN 111357118A
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China
Prior art keywords
circuit
coupled
electrode
devices
neural network
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Pending
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CN201880070919.4A
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English (en)
Chinese (zh)
Inventor
鲁克·克里斯托弗·J
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lu KeKelisituofuJ
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Lu KeKelisituofuJ
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Application filed by Lu KeKelisituofuJ filed Critical Lu KeKelisituofuJ
Publication of CN111357118A publication Critical patent/CN111357118A/zh
Pending legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/122—Single quantum well structures
    • H01L29/127—Quantum box structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66977—Quantum effect devices, e.g. using quantum reflection, diffraction or interference effects, i.e. Bragg- or Aharonov-Bohm effects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/20—Organic diodes
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/04—Architecture, e.g. interconnection topology
    • G06N3/045—Combinations of networks
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
    • G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
    • G06N3/065—Analogue means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0814—Diodes only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Junction Field-Effect Transistors (AREA)
CN201880070919.4A 2017-10-29 2018-10-29 一种电子传递门电路及其制造、操作和使用方法 Pending CN111357118A (zh)

Applications Claiming Priority (13)

Application Number Priority Date Filing Date Title
US201762578483P 2017-10-29 2017-10-29
US62/578,483 2017-10-29
US201762581766P 2017-11-05 2017-11-05
US62/581,766 2017-11-05
US201762584898P 2017-11-12 2017-11-12
US62/584,898 2017-11-12
US201762590632P 2017-11-26 2017-11-26
US62/590,632 2017-11-26
US201862614412P 2018-01-06 2018-01-06
US62/614,412 2018-01-06
US201862641382P 2018-03-11 2018-03-11
US62/641,382 2018-03-11
PCT/US2018/057959 WO2019084537A1 (en) 2017-10-29 2018-10-29 ELECTRON TRANSPORT DOOR CIRCUITS AND METHODS OF MANUFACTURE, OPERATION AND USE

Publications (1)

Publication Number Publication Date
CN111357118A true CN111357118A (zh) 2020-06-30

Family

ID=66247050

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201880070919.4A Pending CN111357118A (zh) 2017-10-29 2018-10-29 一种电子传递门电路及其制造、操作和使用方法

Country Status (3)

Country Link
EP (1) EP3701568A4 (de)
CN (1) CN111357118A (de)
WO (1) WO2019084537A1 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021082130A (ja) * 2019-11-21 2021-05-27 株式会社日立製作所 電子回路、ニューラルネットワーク及びニューラルネットワークの学習方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE9403950D0 (sv) * 1994-11-16 1994-11-16 Siemens Elema Ab Analysapparat
US7671398B2 (en) * 2005-02-23 2010-03-02 Tran Bao Q Nano memory, light, energy, antenna and strand-based systems and methods
US9065253B2 (en) * 2009-05-13 2015-06-23 University Of Washington Through Its Center For Commercialization Strain modulated nanostructures for optoelectronic devices and associated systems and methods
ES2370359B1 (es) * 2009-12-11 2013-02-13 Universidad De Granada Nanoestructuras multifuncionales como agentes de diagnosis trimodal mri-oi-spect.
WO2014023097A1 (zh) * 2012-08-06 2014-02-13 中国科学院理化技术研究所 一种杂原子掺杂的多功能碳量子点的制备方法及其应用
JP6389685B2 (ja) * 2014-07-30 2018-09-12 キヤノン株式会社 撮像装置、および、撮像システム
US9759658B2 (en) * 2014-08-08 2017-09-12 Quantum-Si Incorporated Integrated device for temporal binning of received photons
AU2015350582A1 (en) * 2014-11-18 2017-07-06 Nanyang Technological University Server apparatus and wearable device for blood glucose monitoring and associated methods

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Publication number Publication date
WO2019084537A1 (en) 2019-05-02
EP3701568A4 (de) 2021-08-04
EP3701568A1 (de) 2020-09-02

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