EP3644120A4 - Fotomaskenstruktur und verfahren zur herstellung eines arraysubstrats - Google Patents

Fotomaskenstruktur und verfahren zur herstellung eines arraysubstrats Download PDF

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Publication number
EP3644120A4
EP3644120A4 EP17914867.1A EP17914867A EP3644120A4 EP 3644120 A4 EP3644120 A4 EP 3644120A4 EP 17914867 A EP17914867 A EP 17914867A EP 3644120 A4 EP3644120 A4 EP 3644120A4
Authority
EP
European Patent Office
Prior art keywords
array substrate
manufacturing array
photomask structure
photomask
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP17914867.1A
Other languages
English (en)
French (fr)
Other versions
EP3644120A1 (de
Inventor
Hongyuan XU
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
Publication of EP3644120A1 publication Critical patent/EP3644120A1/de
Publication of EP3644120A4 publication Critical patent/EP3644120A4/de
Withdrawn legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Liquid Crystal (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
EP17914867.1A 2017-06-22 2017-11-06 Fotomaskenstruktur und verfahren zur herstellung eines arraysubstrats Withdrawn EP3644120A4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201710479332.6A CN107153324B (zh) 2017-06-22 2017-06-22 光罩结构及阵列基板制造方法
PCT/CN2017/109503 WO2018233182A1 (zh) 2017-06-22 2017-11-06 光罩结构及阵列基板制造方法

Publications (2)

Publication Number Publication Date
EP3644120A1 EP3644120A1 (de) 2020-04-29
EP3644120A4 true EP3644120A4 (de) 2021-03-24

Family

ID=59796396

Family Applications (1)

Application Number Title Priority Date Filing Date
EP17914867.1A Withdrawn EP3644120A4 (de) 2017-06-22 2017-11-06 Fotomaskenstruktur und verfahren zur herstellung eines arraysubstrats

Country Status (5)

Country Link
EP (1) EP3644120A4 (de)
JP (1) JP6985419B2 (de)
KR (1) KR102278989B1 (de)
CN (1) CN107153324B (de)
WO (1) WO2018233182A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107153324B (zh) * 2017-06-22 2019-09-13 深圳市华星光电半导体显示技术有限公司 光罩结构及阵列基板制造方法
CN113327938B (zh) * 2021-05-28 2023-12-22 合肥维信诺科技有限公司 掩膜版、阵列基板的制作方法和显示装置
CN113504711B (zh) * 2021-06-28 2023-05-02 上海华虹宏力半导体制造有限公司 光刻显影的检测方法

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CN101442028A (zh) * 2007-11-22 2009-05-27 中华映管股份有限公司 平面显示器的制造方法

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KR100810807B1 (ko) * 2000-08-09 2008-03-17 미츠비시덴키 가부시키가이샤 티에프티어레이 제조방법
US7223643B2 (en) * 2000-08-11 2007-05-29 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US20030067579A1 (en) * 2001-10-02 2003-04-10 Fujitsu Limited Liquid crystal display device and method of fabricating the same
JP2003151875A (ja) * 2001-11-09 2003-05-23 Mitsubishi Electric Corp パターンの形成方法および装置の製造方法
JP4117169B2 (ja) * 2002-09-09 2008-07-16 Ｎｅｃ液晶テクノロジー株式会社 液晶表示装置及びその製造方法
KR100616708B1 (ko) * 2004-04-12 2006-08-28 엘지.필립스 엘시디 주식회사 액정표시장치 어레이 기판 및 그 제조방법
JP2007121530A (ja) * 2005-10-26 2007-05-17 Epson Imaging Devices Corp 液晶装置
JP2006251767A (ja) * 2005-11-07 2006-09-21 Obayashi Seiko Kk 液晶表示装置と製造方法
JP4695964B2 (ja) * 2005-11-09 2011-06-08 アルバック成膜株式会社 グレートーンマスク及びその製造方法
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KR101190045B1 (ko) * 2005-12-21 2012-10-12 엘지디스플레이 주식회사 포토 마스크 및 이를 이용한 액정표시장치용 어레이 기판의제조 방법
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KR101900058B1 (ko) * 2011-11-22 2018-09-18 엘지디스플레이 주식회사 광학마스크 및 이를 이용한 컬러필터층 형성방법
KR101984873B1 (ko) * 2012-05-07 2019-06-03 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
CN103762199B (zh) * 2013-12-31 2016-05-18 深圳市华星光电技术有限公司 一种液晶显示器的阵列基板的制造方法
JP2015141237A (ja) * 2014-01-27 2015-08-03 冨士薬品工業株式会社 固体撮像素子の製造方法
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CN107153324B (zh) * 2017-06-22 2019-09-13 深圳市华星光电半导体显示技术有限公司 光罩结构及阵列基板制造方法

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Publication number Priority date Publication date Assignee Title
US20050142680A1 (en) * 2003-12-29 2005-06-30 Lg Philips Lcd Co., Ltd. Method for fabrication liquid crystal display device and diffraction mask therefor
CN101442028A (zh) * 2007-11-22 2009-05-27 中华映管股份有限公司 平面显示器的制造方法

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See also references of WO2018233182A1 *

Also Published As

Publication number Publication date
CN107153324B (zh) 2019-09-13
JP6985419B2 (ja) 2021-12-22
KR102278989B1 (ko) 2021-07-19
KR20200015770A (ko) 2020-02-12
EP3644120A1 (de) 2020-04-29
JP2020519958A (ja) 2020-07-02
CN107153324A (zh) 2017-09-12
WO2018233182A1 (zh) 2018-12-27

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