Classifications

• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
  • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
  • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
  • G01S7/481—Constructional features, e.g. arrangements of optical elements
  • G01S7/4814—Constructional features, e.g. arrangements of optical elements of transmitters alone
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
  • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
  • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
  • G01S7/483—Details of pulse systems
  • G01S7/484—Transmitters
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
  • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
  • G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
  • G01S17/06—Systems determining position data of a target
  • G01S17/08—Systems determining position data of a target for measuring distance only
  • G01S17/10—Systems determining position data of a target for measuring distance only using transmission of interrupted, pulse-modulated waves
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
  • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
  • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
  • G01S7/481—Constructional features, e.g. arrangements of optical elements
  • G01S7/4814—Constructional features, e.g. arrangements of optical elements of transmitters alone
  • G01S7/4815—Constructional features, e.g. arrangements of optical elements of transmitters alone using multiple transmitters
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
  • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
  • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
  • G01S7/497—Means for monitoring or calibrating
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
  • H01S5/0071—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for beam steering, e.g. using a mirror outside the cavity to change the beam direction
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
  • H01S5/042—Electrical excitation ; Circuits therefor
  • H01S5/0428—Electrical excitation ; Circuits therefor for applying pulses to the laser
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
  • H01S5/0615—Q-switching, i.e. in which the quality factor of the optical resonator is rapidly changed
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
  • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
  • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
  • H01S5/06253—Pulse modulation
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
  • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
  • H01S5/4031—Edge-emitting structures
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
  • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
  • G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
  • G01S17/06—Systems determining position data of a target
  • G01S17/42—Simultaneous measurement of distance and other co-ordinates
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
  • H01S5/068—Stabilisation of laser output parameters
  • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
  • H01S5/06835—Stabilising during pulse modulation or generation

Definitions

• Transmitting unit for emitting radiation into the environment
• the present invention relates to a transmission unit for emitting radiation into the environment and to a method for controlling a transmission unit according to the preamble of the independently formulated claims.
• Solid state laser is operated by passive Q-switching.
• the present invention relates to a transmitting unit for emitting radiation into the environment with at least one semiconductor laser, comprising at least a first emitter having a first section and a second section, and at least one control unit for controlling the
• control unit is designed to have the first section of the at least one emitter with a first supply size and the second section of the at least one emitter with one of the first Supply size differing second supply size
• a supply quantity can be electrical charge.
• a supply quantity may be, for example, a current or a voltage.
• the first section can be called amplifier section. Here can z. As charge carriers are stored.
• the second section can be called switching section. The second section can be switched quickly.
• the radiation can be laser radiation.
• the laser radiation can be pulsed.
• the first and the second supply size may differ, for example, in their amounts.
• the timing of loading the first section with the first supply size may differ from the time of loading the second section with the second supply size.
• the contacting of the first section may differ from the contacting of the second section.
• the advantage of the invention is that the semiconductor laser can be selectively influenced by means of active Q-switching, that is to say with at least one second supply variable.
• the transmitting unit can emit (emit) short laser pulses with high energy and high power.
• high pulse repetition rates in particular in the range from 100 kHz to 1 MHz, can be achieved by means of the semiconductor laser.
• Semiconductor laser offers the advantage of smaller size and lower cost. Compared to transmitter units with lasers that are not Q-switched, higher pulse powers can be made possible with the same pulse energy. This is advantageous with respect to the eye safety of the transmitting unit and the
• Detection range of the receiving unit improved signal-to-noise ratio
• the first section has a first region with at least one semiconducting material.
• the second section has a second area with at least one semiconducting material. The first region and the second region are spaced apart.
• the first and second areas may be constructed of different materials.
• the first and the second area can be structured differently. Due to the spacing of the first and the second region, a third region may be formed between the first and the second region.
• This third area can, for. B. may be an insulating region, so that no electrical charge directly from the first to the second region, or vice versa, can be transmitted. The first and the second region can thus be electrically separated at least in the contacting plane.
• the admission of the first section with the first supply size and the admission of the second section with the second supply size can be defined and done very precisely. For example, a charge carrier exchange between the first and the second region can be avoided. As a result, the amplifier section can be subjected to electrical charge in a targeted manner. The second section can be switched specifically and quickly.
• the semiconductor laser may have exactly one emitter.
• Laser radiation in the form of a point-shaped laser beam with high energy and high power can emit.
• Semiconductor laser at least two emitters.
• Each of the at least two emitters has a respective first section assigned to the emitter and a second section assigned in each case to the emitter.
• the transmitting unit with the arrangement of the at least two emitters side by side, can emit the laser radiation in the form of a linear laser beam with high energy and high power.
• the at least two emitters are further geometries of the
• Control unit designed to act on the respective second section of each of the at least two emitters with a, the respective emitter associated second supply size, wherein the second supply variables are in particular different.
• the advantage is that each of the at least two emitters can be switched individually.
• the advantage is that even higher pulse powers and even lower pulse widths can be realized.
• Sending unit further comprises a detector for detecting at least one
• Supply size is dependent on the at least one reference radiation.
• the advantage is that this makes possible an analysis of the laser radiation emitted by each of the at least two emitters.
• This adaptation can z. B. be such that the emission of the radiation can be even better time correlated.
• Transmitting unit to further optical elements.
• the transmitting unit points
• a deflection unit for deflecting the radiation emitted by the semiconductor laser along a deflection direction into the environment.
• the Deflection unit can be movable and its movement can be controlled.
• Deflection unit can z. B. be a mirror.
• the advantage is that the radiation emitted by the semiconductor laser can be changed in its shape and propagation direction. So can the
• Propagation direction by optical elements such. B. mirror or beam splitter can be changed.
• the shape of the radiation can z. B. be changed by optical lenses or prisms.
• the transmission unit can be used for systems in which the laser radiation must be deflected in different spatial directions.
• the present invention is further based on a LiDAR sensor with a transmitting unit, as just described.
• the LiDAR sensor further includes a receiving unit for receiving radiation reflected from an object in the environment.
• the receiving unit can have a
• the detector may be a Single Photon Avalanche Photodiode Detector (SPAD).
• SPAD Single Photon Avalanche Photodiode Detector
• Semiconductor laser results in an improved signal-to-noise ratio for the LiDAR sensor.
• the good signal-to-noise ratio may be due to the short laser pulses with high energy and high power of the transmitting unit.
• the system resolution for the LiDAR sensor can be increased.
• the range of the LIDAR sensor described here can be significantly greater than in the case of LiDAR sensors whose transmitting unit does not have an active-contact semiconductor laser.
• the present invention is further based on a method for
• Driving a transmitter unit with at least one semiconductor laser comprising at least a first emitter having a first section and a second section, for the emission of radiation into the environment.
• the method comprises the step of applying the first section by means of a
• Control unit with a first supply size.
• the method further comprises the step of loading the second section by means of Control unit, with one of the first supply size
• the semiconductor laser has at least two emitters.
• Each of the at least two emitters has a respective first section assigned to the emitter and a second section assigned in each case to the emitter.
• the respective second section of each of the at least two emitters is acted upon by a second supply variable assigned to the respective emitter.
• the second supply variables are different in particular.
• the method comprises the further step of detecting at least one reference radiation by means of a detector.
• the second supply variable assigned to the respective emitter is adapted as a function of the analysis.
• FIG. 1 shows a LiDAR sensor with a transmitting unit according to the invention
• FIG. 2 shows a first embodiment of a transmitting unit
• FIG. 3 shows a second embodiment of a transmitting unit
• FIG. 4A shows the emitted laser radiation of a transmitting unit without
• FIG. 4B shows the emitted laser radiation of a transmitting unit
• Figure 5 shows the cross section of an emitter of the semiconductor laser.
• FIG. 1 shows, by way of example, the schematic structure of a LIDARR sensor 100.
• the LiDAR sensor 100 has the transmitting unit 100-1. This in turn has the control unit 101.
• the semiconductor laser 102 is driven and thus operated.
• the semiconductor laser 102 emits radiation in the form of laser radiation.
• the laser radiation can be pulsed.
• the laser radiation can be changed in the form and propagation direction by means of at least one further optical element 103 of the transmitting unit 100-1.
• the optical element 103 is shown here only schematically.
• the optical element 103 may be, for example, a mirror, a beam splitter, a lens or a prism.
• the laser radiation can be emitted (emitted) into the environment.
• the laser radiation can be emitted (emitted) after the change by means of the optical element 103 into the environment.
• the laser radiation can be reflected by an object 104.
• the laser radiation may be scattered by an object 104.
• the radiation reflected and / or scattered by the object 104 can be received by the receiving unit 100-2 of the lidar sensor 100. This can also be the
• Receiving unit 100-2 optical elements 105 have.
• the received radiation may be directed to a detector 106. This will be on
• Detector signals generated. By means of a device for signal processing 107, these signals can be evaluated.
• FIG. 2 shows the first embodiment of the transmission unit 100-1A.
• the illustrated semiconductor laser 102 has the six emitters 201-1 to 201-6 (in FIG. 2
• Each of the emitters 201-x of the semiconductor laser 102 has a first section 202-x and a second section 203-x.
• the first sections 202-x may be the amplifier sections.
• the second sections 203-x can be the switching sections.
• An example of the detailed structure of such an emitter 201-x is described below in FIG.
• the first sections 202-x of the six emitters 201-x shown are subjected to a first supply variable 204. It can be any of the first sections 202-x with the first
• Supply size 204 are applied.
• the current 204 flows to the amplifier sections 202-x.
• the second sections 203-x of the six emitters 201-x shown are subjected to a second supply variable 205. It can be applied to each of the second sections with the second supply size 205.
• the current 205 flows to the switching sections 203-x.
• the control unit 201 is preferably designed to perform the admission of the first sections 202-x with the first supply variable 204 independently of the admission of the second sections 203-x with the second supply variable 205. This may be the control unit 201 z.
• B. may be a multi-section laser diode driver.
• the emitters 201-x By actively charging the second sections 203-x with the second supply variable 205, the emitters 201-x can be disconnected. As a result, the individual pulses of the six emitters 201-x can be time-correlated. The individual pulses of the emitter 201-x can
• Pulse power can be achieved.
• the location of the first sections 202-x and the second sections 203-x is variable.
• the first sections 202-x and the second sections 203-x may also be positioned such that the second sections 203-x are located closer to the control unit 201. This has the advantage of a short electrical connection of the control unit 201 to the switching sections 203-x. This results in a lower inductance, resulting in a faster switching process at lower voltages.
• the switching sections 203-x may also be mounted centrally to the semiconductor laser 102.
• the pulsed laser beams of all emitters 201-x are bundled in the example shown by means of an optical lens 206 and placed on a movable
• the laser radiation 209 is emitted in the form of a linear laser beam along the deflection direction 208 into the surroundings of the transmission unit 100-1A.
• FIG. 3 shows the transmitting unit 100-lB as a second exemplary embodiment.
• the transmitting unit 100-lB further optical elements such. As an optical lens or a deflection mirror. These further optical elements are not shown separately in FIG.
• the illustrated semiconductor laser 102 of the transmitting unit 100-lB has six emitters 201-x. Each of the emitters 201-x has a first section 202-x, which
• Amplifier section and a second section 203-x, the switching section.
• the transmitting unit 100-IB further comprises the detector 303 for detecting the reference radiation 302-x from the back facet of the emitter 201-x.
• the detector 303 may, for. B. be a monitor diode array.
• the reference radiation can be analyzed. Based on the reference radiation 302-x, the time sequence of the laser pulses 209-x of the emitter 201-x can be detected.
• a signal 304 which represents the information about the time sequence, can be sent to the
• Control unit 101 are transmitted.
• the first sections 202-x of the six emitters 201-x shown can be acted upon by a first supply variable 204.
• Each of the first sections 202-x can be supplied with the first supply variable 204.
• Supply size 204 for all of the six emitters 201-x have the same amount.
• the amplifier sections 202-x of all emitters 201-x are charged by a common current 204.
• the second sections 203-x of the six emitters 201-x shown can be connected to one, assigned to the respective emitter, second supply size 205-x be applied.
• the current 205-1 flowing to the switching section 203-1 may have a different amount than the current 205-2 flowing to the switching section 203-2, etc.
• the second supply sizes 205-x are adjusted so that the emission of the laser pulses 209-x is even better time-correlated. The synchronicity of the emitted laser pulses 209-x is increased.
• FIG. 4A shows a diagram in which the optical power 401 is plotted over time 402. It is qualitatively the individual pulses 209-x of the emitter 201-x of a transmitting unit, as they are z. As Figure 3 shows, shown without time correlation / synchronization.
• FIG. 4B likewise shows a diagram in which the optical power 401 is plotted over time 402. It is qualitatively the individual pulses 209-x of the emitter 201-x of a transmitting unit 100-1, as z. B.
• Figure 3 shows, with
• Time correlation / synchronization shown.
• the synchronicity of the laser pulses 209-x is clearly increased compared to FIG. 4A.
• the detector 303 of the transmitting unit 100-1B may alternatively be a single
• each emitters 201-x of the semiconductor laser 102 of a transmitting unit 100-1 it is possible to individually control the emitters 201-x of the semiconductor laser 102 of a transmitting unit 100-1.
• individual emitters 201-x can be selectively switched off. This can be advantageous if there are highly reflective objects in the measurement path that disturb the measurement.
• FIG. 5 shows the cross section of an emitter 201 of a semiconductor laser 102, as may be provided by a transmitting unit 100-1 shown in the preceding figures.
• the emitter 201 has the first section 202, which is connected to the first
• the emitter 201 further has the second section 203, which can be acted upon by the second supply variable 205.
• the emitter 201 may emit laser pulses 209.
• the first section 202 has a first region 502 with at least one semiconducting material.
• the second section 203 has a second area 503 with at least one semiconducting material.
• the first area 502 and the second area 503 are spaced from each other.
• between the first region 502 and the second region 503 is an isolation region 501.
• the first region 502 and the second region 503 are arranged on layers that can share the first section 202 and the second section in common.
• the first region 502 and the second region 503 may be disposed on a common waveguiding layer 504. In the middle of
• Wave guiding layer 504, the active zone 505 may be arranged.
• the first section 202 and the second section 203 may further share a common substrate 506.

Landscapes

• Physics & Mathematics (AREA)
• Engineering & Computer Science (AREA)
• General Physics & Mathematics (AREA)
• Electromagnetism (AREA)
• Computer Networks & Wireless Communication (AREA)
• Radar, Positioning & Navigation (AREA)
• Remote Sensing (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• Optics & Photonics (AREA)
• Optical Radar Systems And Details Thereof (AREA)

Applications Claiming Priority (2)

Publications (1)

Family

ID=62148379

Family Applications (1)

Country Status (7)

Families Citing this family (2)

Citations (1)

Family Cites Families (16)

• 2017
  • 2017-05-23 DE DE102017208705.6A patent/DE102017208705A1/de active Pending
• 2018
  • 2018-05-09 CN CN201880033578.3A patent/CN110662979B/zh active Active
  • 2018-05-09 WO PCT/EP2018/061976 patent/WO2018215211A1/de active Application Filing
  • 2018-05-09 US US16/615,479 patent/US11579261B2/en active Active
  • 2018-05-09 KR KR1020197037378A patent/KR102555227B1/ko active IP Right Grant
  • 2018-05-09 EP EP18723820.9A patent/EP3631495A1/de active Pending
  • 2018-05-09 JP JP2019564787A patent/JP2020521139A/ja active Pending

Patent Citations (1)

Also Published As

Similar Documents

Legal Events