EP3618576A1 - Manufacturing method for organic device - Google Patents
Manufacturing method for organic device Download PDFInfo
- Publication number
- EP3618576A1 EP3618576A1 EP18792129.1A EP18792129A EP3618576A1 EP 3618576 A1 EP3618576 A1 EP 3618576A1 EP 18792129 A EP18792129 A EP 18792129A EP 3618576 A1 EP3618576 A1 EP 3618576A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- layer
- sealing member
- organic
- support substrate
- organic device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
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- 239000010410 layer Substances 0.000 claims abstract description 192
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- 238000007789 sealing Methods 0.000 claims abstract description 101
- 238000000034 method Methods 0.000 claims abstract description 65
- 238000005520 cutting process Methods 0.000 claims abstract description 58
- 239000002346 layers by function Substances 0.000 claims abstract description 34
- 239000000463 material Substances 0.000 description 31
- 238000000605 extraction Methods 0.000 description 23
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 238000001771 vacuum deposition Methods 0.000 description 5
- 239000004698 Polyethylene Substances 0.000 description 4
- 239000004743 Polypropylene Substances 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 239000011365 complex material Substances 0.000 description 4
- 150000004696 coordination complex Chemical class 0.000 description 4
- ZYGHJZDHTFUPRJ-UHFFFAOYSA-N coumarin Chemical compound C1=CC=C2OC(=O)C=CC2=C1 ZYGHJZDHTFUPRJ-UHFFFAOYSA-N 0.000 description 4
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- 238000009966 trimming Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- VQGHOUODWALEFC-UHFFFAOYSA-N 2-phenylpyridine Chemical compound C1=CC=CC=C1C1=CC=CC=N1 VQGHOUODWALEFC-UHFFFAOYSA-N 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
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- 229910052693 Europium Inorganic materials 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- 229910000846 In alloy Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000005062 Polybutadiene Substances 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical compound N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052771 Terbium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052790 beryllium Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229960000956 coumarin Drugs 0.000 description 2
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- 239000007789 gas Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
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- 239000010931 gold Substances 0.000 description 2
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- 238000007646 gravure printing Methods 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- WCPAKWJPBJAGKN-UHFFFAOYSA-N oxadiazole Chemical compound C1=CON=N1 WCPAKWJPBJAGKN-UHFFFAOYSA-N 0.000 description 2
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 2
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 2
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- 238000007650 screen-printing Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- NGQSLSMAEVWNPU-YTEMWHBBSA-N 1,2-bis[(e)-2-phenylethenyl]benzene Chemical compound C=1C=CC=CC=1/C=C/C1=CC=CC=C1\C=C\C1=CC=CC=C1 NGQSLSMAEVWNPU-YTEMWHBBSA-N 0.000 description 1
- SHXCHSNZIGEBFL-UHFFFAOYSA-N 1,3-benzothiazole;zinc Chemical class [Zn].C1=CC=C2SC=NC2=C1 SHXCHSNZIGEBFL-UHFFFAOYSA-N 0.000 description 1
- KLCLIOISYBHYDZ-UHFFFAOYSA-N 1,4,4-triphenylbuta-1,3-dienylbenzene Chemical compound C=1C=CC=CC=1C(C=1C=CC=CC=1)=CC=C(C=1C=CC=CC=1)C1=CC=CC=C1 KLCLIOISYBHYDZ-UHFFFAOYSA-N 0.000 description 1
- DWYHDSLIWMUSOO-UHFFFAOYSA-N 2-phenyl-1h-benzimidazole Chemical compound C1=CC=CC=C1C1=NC2=CC=CC=C2N1 DWYHDSLIWMUSOO-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- AJWRRBADQOOFSF-UHFFFAOYSA-N C1=CC=C2OC([Zn])=NC2=C1 Chemical class C1=CC=C2OC([Zn])=NC2=C1 AJWRRBADQOOFSF-UHFFFAOYSA-N 0.000 description 1
- UXYHZIYEDDINQH-UHFFFAOYSA-N C1=CNC2=C3C=NN=C3C=CC2=C1 Chemical compound C1=CNC2=C3C=NN=C3C=CC2=C1 UXYHZIYEDDINQH-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 1
- 229920000265 Polyparaphenylene Polymers 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- XBDYBAVJXHJMNQ-UHFFFAOYSA-N Tetrahydroanthracene Natural products C1=CC=C2C=C(CCCC3)C3=CC2=C1 XBDYBAVJXHJMNQ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- ULGYAEQHFNJYML-UHFFFAOYSA-N [AlH3].[Ca] Chemical compound [AlH3].[Ca] ULGYAEQHFNJYML-UHFFFAOYSA-N 0.000 description 1
- JFBZPFYRPYOZCQ-UHFFFAOYSA-N [Li].[Al] Chemical compound [Li].[Al] JFBZPFYRPYOZCQ-UHFFFAOYSA-N 0.000 description 1
- JHYLKGDXMUDNEO-UHFFFAOYSA-N [Mg].[In] Chemical compound [Mg].[In] JHYLKGDXMUDNEO-UHFFFAOYSA-N 0.000 description 1
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 1
- 239000011354 acetal resin Substances 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- SNAAJJQQZSMGQD-UHFFFAOYSA-N aluminum magnesium Chemical compound [Mg].[Al] SNAAJJQQZSMGQD-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- HFXKQSZZZPGLKQ-UHFFFAOYSA-N cyclopentamine Chemical compound CNC(C)CC1CCCC1 HFXKQSZZZPGLKQ-UHFFFAOYSA-N 0.000 description 1
- 229960003263 cyclopentamine Drugs 0.000 description 1
- CUIWZLHUNCCYBL-UHFFFAOYSA-N decacyclene Chemical compound C12=C([C]34)C=CC=C4C=CC=C3C2=C2C(=C34)C=C[CH]C4=CC=CC3=C2C2=C1C1=CC=CC3=CC=CC2=C31 CUIWZLHUNCCYBL-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- JVZRCNQLWOELDU-UHFFFAOYSA-N gamma-Phenylpyridine Natural products C1=CC=CC=C1C1=CC=NC=C1 JVZRCNQLWOELDU-UHFFFAOYSA-N 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- LHJOPRPDWDXEIY-UHFFFAOYSA-N indium lithium Chemical compound [Li].[In] LHJOPRPDWDXEIY-UHFFFAOYSA-N 0.000 description 1
- YZASAXHKAQYPEH-UHFFFAOYSA-N indium silver Chemical compound [Ag].[In] YZASAXHKAQYPEH-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
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- 238000009830 intercalation Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 150000002503 iridium Chemical class 0.000 description 1
- 150000002605 large molecules Chemical class 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- GCICAPWZNUIIDV-UHFFFAOYSA-N lithium magnesium Chemical compound [Li].[Mg] GCICAPWZNUIIDV-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910052976 metal sulfide Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 150000004866 oxadiazoles Chemical class 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- DGBWPZSGHAXYGK-UHFFFAOYSA-N perinone Chemical compound C12=NC3=CC=CC=C3N2C(=O)C2=CC=C3C4=C2C1=CC=C4C(=O)N1C2=CC=CC=C2N=C13 DGBWPZSGHAXYGK-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- FIZIRKROSLGMPL-UHFFFAOYSA-N phenoxazin-1-one Chemical compound C1=CC=C2N=C3C(=O)C=CC=C3OC2=C1 FIZIRKROSLGMPL-UHFFFAOYSA-N 0.000 description 1
- UOMHBFAJZRZNQD-UHFFFAOYSA-N phenoxazone Natural products C1=CC=C2OC3=CC(=O)C=CC3=NC2=C1 UOMHBFAJZRZNQD-UHFFFAOYSA-N 0.000 description 1
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- 150000004032 porphyrins Chemical class 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- JEXVQSWXXUJEMA-UHFFFAOYSA-N pyrazol-3-one Chemical compound O=C1C=CN=N1 JEXVQSWXXUJEMA-UHFFFAOYSA-N 0.000 description 1
- 150000003219 pyrazolines Chemical class 0.000 description 1
- 150000003222 pyridines Chemical class 0.000 description 1
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 125000005504 styryl group Chemical group 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- VLLMWSRANPNYQX-UHFFFAOYSA-N thiadiazole Chemical compound C1=CSN=N1.C1=CSN=N1 VLLMWSRANPNYQX-UHFFFAOYSA-N 0.000 description 1
- 150000003577 thiophenes Chemical class 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 150000003751 zinc Chemical class 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B26—HAND CUTTING TOOLS; CUTTING; SEVERING
- B26D—CUTTING; DETAILS COMMON TO MACHINES FOR PERFORATING, PUNCHING, CUTTING-OUT, STAMPING-OUT OR SEVERING
- B26D7/00—Details of apparatus for cutting, cutting-out, stamping-out, punching, perforating, or severing by means other than cutting
- B26D7/20—Cutting beds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B26—HAND CUTTING TOOLS; CUTTING; SEVERING
- B26F—PERFORATING; PUNCHING; CUTTING-OUT; STAMPING-OUT; SEVERING BY MEANS OTHER THAN CUTTING
- B26F1/00—Perforating; Punching; Cutting-out; Stamping-out; Apparatus therefor
- B26F1/38—Cutting-out; Stamping-out
- B26F1/44—Cutters therefor; Dies therefor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
- H05B33/04—Sealing arrangements, e.g. against humidity
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
- H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/851—Division of substrate
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Forests & Forestry (AREA)
- Mechanical Engineering (AREA)
- Electroluminescent Light Sources (AREA)
- Details Of Cutting Devices (AREA)
- Perforating, Stamping-Out Or Severing By Means Other Than Cutting (AREA)
Abstract
Description
- The present invention relates to a method for manufacturing an organic device.
- Regarding a conventional method for manufacturing an organic device, for example, the method described in
Patent Literature 1 is known. In the method for manufacturing an organic device described inPatent Literature 1, an organic device part in which a laminate in which at least a first electrode, an organic layer including at least one light emitting layer, and a second electrode are sequentially laminated on a support substrate having flexibility is formed is provided, a sealing member using a metal foil is bonded to a barrier layer via an adhesive on the second electrode of the organic device part, and then, in a part in which an adhesive layer including an adhesive and the sealing member are laminated in this order on the support substrate, a cutting blade is advanced toward the sealing member from the side of the support substrate, the structure to which the sealing member is bonded is cut in the order of the support substrate, the adhesive layer including an adhesive, and the sealing member, and individual organic EL elements are manufactured. - [Patent Literature 1]
PCT International Publication No. WO2010/067721 - Organic devices in which respective parts of a first electrode and a second electrode are exposed and a sealing member is provided are known. When such an organic device is manufactured, the sealing member is bonded to a plurality of organic device parts and cutting is then performed so that respective parts of the first electrode and the second electrode are exposed, and thus individual organic devices can be separated into pieces. In this case, as in the conventional method for manufacturing an organic device, when the cutting blade is advanced toward the sealing member from the side of the support substrate, the following problems can occur. Specifically, the height is different between a part in which the sealing member is provided and a part in which no sealing member is provided. Therefore, when the organic device is mounted on a mounting table or the like with the sealing member on the lower side, since the part in which no sealing member is provided is not supported, when the cutting blade is advanced toward the sealing member from the side of the support substrate, the support substrate may bend, it may not be possible to appropriately cut the support substrate, and it may not be possible to appropriately separate individual organic devices into pieces.
- According to one aspect of the present invention, there is provided a method for manufacturing an organic device through which individual organic devices can be appropriately separated into pieces.
- A method for manufacturing an organic device according to one aspect of the present invention includes a forming step of forming a plurality of organic device parts in which at least a first electrode layer, an organic functional layer and a second electrode layer are laminated in this order at predetermined intervals on one main surface of a support substrate which extends in one direction; a bonding step of bonding a sealing member which extends in the one direction in the one direction so that respective parts of the first electrode layer and the second electrode layer in the organic device parts are exposed and straddle the plurality of organic device parts; and a cutting step of separating the plurality of organic device parts to which the sealing member is bonded into pieces, wherein, in the cutting step, while an area of the one main surface of the support substrate to which the sealing member is not bonded and the sealing member are supported by a support in contact with the area and the sealing member, a cutting blade is made to enter from the side of the other main surface of the support substrate.
- In the method for manufacturing an organic device according to one aspect of the present invention, in the cutting step, while an area of the one main surface of the support substrate to which the sealing member is not bonded and the sealing member are supported by a support in contact with the area and the sealing member, a cutting blade is made to enter from the side of the other main surface of the support substrate. In this method, since the support substrate and the sealing member are supported by the support, when the support substrate is cut, bending of the support substrate at the part to which no sealing member is bonded is prevented. Therefore, in the method for manufacturing an organic device, the organic devices can be appropriately separated into pieces.
- In one embodiment, the support has a space in which the organic device part and the sealing member are able to be accommodated and which extends in one direction. In the cutting step, when the organic device part and the sealing member are positioned in the space and the sealing member is in contact with one surface that defines the space, the cutting blade may be made to enter from the side of the other main surface. In this method, it is possible to support the support substrate by the support while transporting the support substrate. Therefore, it is possible to improve the workability in the cutting step.
- In one embodiment, in the support, a groove into which the cutting blade can enter may be provided at a position at which the area is supported. In this method, the support substrate can be cut while supporting the support substrate by the support.
- According to one aspect of the present invention, individual organic devices can be appropriately separated into pieces.
-
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FIG. 1 is a cross-sectional view of an organic EL element manufactured by a method for manufacturing an organic device according to an embodiment. -
FIG. 2 is a flowchart showing a method for manufacturing an organic EL element. -
FIG. 3 is a perspective view showing a state in which a sealing member is bonded to an organic device part. -
FIG. 4 is a diagram for explaining a cutting step. -
FIG. 5 is a diagram for explaining the cutting step. - Exemplary embodiments of the present invention will be described below in detail with reference to the appended drawings. Here, the same or corresponding components are denoted with the same reference numerals in the following description of drawings, and redundant descriptions thereof will be omitted.
- As shown in
FIG. 1 , an organic EL element (organic device) 1 manufactured by a method for manufacturing an organic device of the present embodiment includes asupport substrate 3, an anode layer (first electrode layer) 5, an organicfunctional layer 7, a cathode layer (second electrode layer) 9, and asealing member 11. Theanode layer 5, the organicfunctional layer 7 and thecathode layer 9 constitute an organic EL part (organic device part) 10. Theorganic EL element 1 may include anextraction electrode 13 electrically connected to theanode layer 5 and anextraction electrode 15 electrically connected to thecathode layer 9. - The
support substrate 3 is made of a resin having transparency with respect to visible light (light with a wavelength of 400 nm to 800 nm). Thesupport substrate 3 is a film-like substrate (a flexible substrate and a substrate having flexibility). The thickness of thesupport substrate 3 is, for example, 30 µm or more and 500 µm or less. When thesupport substrate 3 is made of a resin, preferably, the thickness is 45 µm or more in consideration of substrate deflection, wrinkles, and elongation during a continuous roll-to-roll method, and is 125 µm or less in consideration of flexibility. - The
support substrate 3 is, for example, a plastic film. Examples of materials of thesupport substrate 3 include polyether sulfone (PES); polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN); polyolefin resins such as polyethylene (PE), polypropylene (PP), and cyclic polyolefins; polyamide resins; polycarbonate resins; polystyrene resins; polyvinyl alcohol resins; saponified products of ethylene-vinyl acetate copolymers; polyacrylonitrile resins; acetal resins; polyimide resins; and epoxy resins. - Among the above resins, the material of the
support substrate 3 is preferably a polyester resin or a polyolefin resin because it will then have a high heat resistance, a low coefficient of linear expansion, and low production costs, and is more preferably polyethylene terephthalate or polyethylene naphthalate. These resins may be used alone and two or more thereof may be used in combination. - A gas barrier layer or a water barrier layer may be disposed on one
main surface 3a of thesupport substrate 3. The othermain surface 3b of thesupport substrate 3 is a light emitting surface. A light extraction film may be provided on the othermain surface 3b of thesupport substrate 3. The light extraction film may be bonded to the othermain surface 3b of thesupport substrate 3 via an adhesive layer. Thesupport substrate 3 may be a thin film glass. When thesupport substrate 3 is a thin film glass, preferably, the thickness is 30 µm or more in consideration of the strength and 100 µm or less in consideration of flexibility. - The
anode layer 5 is disposed on the onemain surface 3a of thesupport substrate 3. An electrode layer exhibiting light transmission is used for theanode layer 5. Regarding an electrode exhibiting light transmission, a thin film made of a metal oxide, a metal sulfide or a metal having high electrical conductivity can be used, and a thin film having high light transmittance is suitably used. For example, thin films made of indium oxide, zinc oxide, tin oxide, indium tin oxide (abbreviation ITO), indium zinc oxide (abbreviation IZO), gold, platinum, silver, copper, or the like are used. Among these, a thin film made of ITO, IZO, or tin oxide is suitably used. - Regarding the
anode layer 5, a transparent conductive film made of an organic material such as polyaniline and derivatives thereof, polythiophene and derivatives thereof may be used. Regarding theanode layer 5, an electrode obtained by patterning the above exemplified metals or metal alloys in a mesh shape or an electrode in which nanowires containing silver are formed into a network shape may be used. - The thickness of the
anode layer 5 can be determined in consideration of light transmission, electrical conductivity, and the like. The thickness of theanode layer 5 is generally 10 nm to 10 µm, preferably 20 nm to 1 µm, and more preferably 50 nm to 200 nm. - Examples of a method of forming the
anode layer 5 include a dry film forming method such as a vacuum deposition method, a sputtering method, and an ion plating method, and a coating method such as an inkjet method, a slit coating method, a gravure printing method, a screen printing method, and a spray coating method. In theanode layer 5, additionally, a pattern can be formed using a photolithographic method, a dry etching method, a laser trimming method, or the like. Direct coating is performed on thesupport substrate 3 using a coating method, and thus a pattern can be formed without using a photolithographic method, a dry etching method, a laser trimming method, or the like. - An
electrode layer 6 is disposed on the onemain surface 3a of thesupport substrate 3. Theelectrode layer 6 is disposed apart from the anode layer 5 (electrically insulated) at a predetermined interval from theanode layer 5. The thickness, material, and formation method of theelectrode layer 6 may be the same as those in theanode layer 5. - The
extraction electrode 13 is disposed on theanode layer 5. Theextraction electrode 13 is disposed at one end (the end opposite to the end in which theextraction electrode 15 to be described below is disposed) of thesupport substrate 3. In the present embodiment, the end surface of theextraction electrode 13 is flush with the end surface (the end surface of the support substrate 3) of theanode layer 5. The thickness, material, and formation method of theextraction electrode 13 may be the same as those in thecathode layer 9 to be described below. - The organic
functional layer 7 is disposed on the main surface (the side opposite to the surface in contact with the support substrate 3) of theanode layer 5 and on the onemain surface 3a of thesupport substrate 3. The organicfunctional layer 7 is disposed apart from theextraction electrode 13. The organicfunctional layer 7 includes a light emitting layer. The organicfunctional layer 7 generally contains a light emitting material that mainly emits fluorescence and/or phosphorescence or a light emitting material and a dopant material for a light emitting layer that assists the light emitting material. For example, the dopant material for a light emitting layer is added to improve luminous efficiency or change a light emission wavelength. The light emitting material that emits fluorescence and/or phosphorescence may be a low-molecular-weight compound or a high-molecular-weight compound. Examples of organic materials constituting the organicfunctional layer 7 include a light emitting material that emits fluorescence and/or phosphorescence such as the following dye materials, metal complex materials, and polymeric materials and the following dopant materials for a light emitting layer. - Examples of dye materials include cyclopentamine and derivatives thereof, tetraphenylbutadiene and derivatives thereof, triphenylamine and derivatives thereof, oxadiazole and derivatives thereof, pyrazoloquinoline and derivatives thereof, distyrylbenzene and derivatives thereof, distyrylarylene and derivatives thereof, pyrrole and derivatives thereof, thiophene compounds, pyridine compounds, perinone and derivatives thereof, perylene and derivatives thereof, oligothiophene and derivatives thereof, oxadiazole dimers, pyrazoline dimers, quinacridone and derivatives thereof, and coumarin and derivatives thereof.
- Examples of metal complex materials include metal complexes which contains a rare earth metal such as Tb, Eu, and Dy, or Al, Zn, Be, Pt, or Ir as a central metal, and have am oxadiazole, thiadiazole, phenylpyridine, phenylbenzimidazole, or quinoline structure or the like in a ligand. Examples of metal complexes include metal complexes emitting light in a triplet excited state such as iridium complexes and platinum complexes, aluminum quinolinol complexes, benzoquinolinol beryllium complexes, benzoxazolyl zinc complexes, benzothiazole zinc complexes, azomethyl zinc complexes, porphyrin zinc complexes, and phenanthroline europium complexes.
- Examples of polymeric materials include polyparaphenylene vinylene and derivatives thereof, polythiophene and derivatives thereof, polyparaphenylene and derivatives thereof, polysilane and derivatives thereof, polyacetylene and derivatives thereof, polyfluorene and derivatives thereof, polyvinylcarbazole and derivatives thereof, and materials obtained by polymerizing the above dye materials or metal complex materials.
- Examples of dopant materials for a light emitting layer include perylene and derivatives thereof, coumarin and derivatives thereof, rubrene and derivatives thereof, quinacridone and derivatives thereof, squarylium and derivatives thereof, porphyrin and derivatives thereof, styryl dyes, tetracene and derivatives thereof, pyrazolone and derivatives thereof, decacyclene and derivatives thereof, and phenoxazone and derivatives thereof.
- The thickness of the organic
functional layer 7 is generally about 2 nm to 200 nm. For example, the organicfunctional layer 7 is formed by a coating method using a coating solution (for example, an ink) containing the above light emitting material. A solvent for a coating solution containing a light emitting material is not limited as long as it dissolves the light emitting material. The above light emitting material may be formed by vacuum deposition. - The
cathode layer 9 is disposed on the main surface (the side opposite to the surface in contact with the anode layer 5) of the organicfunctional layer 7 and the main surface (the side opposite to the surface in contact with the support substrate 3) of theelectrode layer 6. Regarding the material of thecathode layer 9, for example, alkali metals, alkaline earth metals, transition metals, and metals inGroup 13 in the periodic table can be used. Regarding the material of thecathode layer 9, specifically, for example, a metal such as lithium, sodium, potassium, rubidium, cesium, beryllium, magnesium, calcium, strontium, barium, aluminum, scandium, vanadium, zinc, yttrium, indium, cerium, samarium, europium, terbium, and ytterbium, an alloy of two or more of the above metals, an alloy of one or more of the above metals and one or more of gold, silver, platinum, copper, manganese, titanium, cobalt, nickel, tungsten, and tin, or graphite or a graphite intercalation compound is used. Examples of alloys include magnesium-silver alloys, magnesium-indium alloys, magnesium-aluminum alloys, indium-silver alloys, lithium-aluminum alloys, lithium-magnesium alloys, lithium-indium alloys, and calcium-aluminum alloys. - For the
cathode layer 9, for example, a transparent conductive electrode made of a conductive metal oxide, a conductive organic material, or the like can be used. Specific examples of conductive metal oxides include indium oxide, zinc oxide, tin oxide, ITO, and IZO, and examples of conductive organic materials include polyaniline and derivatives thereof, polythiophene and derivatives thereof. Thecathode layer 9 may have a laminate configuration in which two or more layers are laminated. An electron injection layer to be described below may be used as thecathode layer 9. - The thickness of the
cathode layer 9 is set in consideration of the electrical conductivity and durability. The thickness of thecathode layer 9 is generally 10 nm to 10 µm, preferably 20 nm to 1 µm, and more preferably 50 nm to 500 nm. - Examples of a method of forming the
cathode layer 9 include coating methods such as an inkjet method, a slit coating method, a gravure printing method, a screen printing method, and a spray coating method, a vacuum deposition method, a sputtering method, and a lamination method of thermocompression bonding a metal thin film, and a vacuum deposition method or a sputtering method is preferable. In thecathode layer 9, additionally, a pattern can be formed using a photolithographic method, a dry etching method, a laser trimming method, or the like. - The
extraction electrode 15 is integrally formed with thecathode layer 9. Theextraction electrode 15 is disposed on theelectrode layer 6. Theextraction electrode 15 is disposed at the other end (the end opposite to the end at which theextraction electrode 13 is disposed) of thesupport substrate 3. Theextraction electrode 15 extends from the end of thecathode layer 9 to the other end of thesupport substrate 3. In the present embodiment, the end surface of theextraction electrode 15 is flush with the end surface (the end surface of the support substrate 3) of theelectrode layer 6. The thickness, material, and formation method of theextraction electrode 15 may be the same as those in thecathode layer 9. - The sealing
member 11 is disposed on the top part of theorganic EL element 1. The sealingmember 11 includes anadhesive part 17, abarrier layer 18, and a sealingsubstrate 19. In the sealingmember 11, theadhesive part 17, thebarrier layer 18 and the sealingsubstrate 19 are laminated in this order. Theadhesive part 17 is used to adhere thebarrier layer 18 and the sealingsubstrate 19 to theanode layer 5, the organicfunctional layer 7, and thecathode layer 9. Specifically, theadhesive part 17 is made of a photocurable or thermosetting acrylate resin or a photocurable or thermosetting epoxy resin. Other resin films that can be fused with an impulse sealer which is generally used include, for example, heat-fusible films such as an ethylene vinyl acetate copolymer (EVA), a polypropylene (PP) film, a polyethylene (PE) film, and a polybutadiene (PB) film can be used. A thermoplastic resin can also be used. - The
barrier layer 18 has a gas barrier function, particularly, a water barrier function. The sealingsubstrate 19 is made of a metal foil, a transparent plastic film, or a thin film glass having flexibility. The metal foil is preferably made of copper, aluminum, or stainless steel in consideration of barrier properties. The thickness of the metal foil is preferably thicker in consideration of prevention of pinholes, but it is preferably 10 µm to 50 µm in consideration of flexibility. - Subsequently, a method for manufacturing an
organic EL element 1 having the above configuration will be described. - In a form in which the
support substrate 3 is a substrate which has flexibility and extends in the longitudinal direction, a roll-to-roll method can be adopted from the substrate drying step S01 to bonding step S05 shown inFIG. 2 . - When the
organic EL element 1 is manufactured, first, thesupport substrate 3 is heated and dried (substrate drying step S01). Next, theanode layer 5 is formed on the onemain surface 3a of the dried support substrate 3 (anode layer forming step (forming step) S02). Theanode layer 5 can be formed by a formation method exemplified in the description of theanode layer 5. As shown inFIG. 3 , on thesupport substrate 3, a plurality ofanode layers 5 are formed in the longitudinal direction (Y direction inFIG. 3 ) of thesupport substrate 3 at predetermined intervals, and a plurality of (two in the present embodiment)anode layers 5 are formed in the width direction (X direction inFIG. 3 ) of thesupport substrate 3 at predetermined intervals. - Subsequently, the organic
functional layer 7 is formed on the anode layer 5 (organic functional layer forming step (forming step) S03). The organicfunctional layer 7 can be formed by a formation method exemplified in the description of the organicfunctional layer 7. Next, thecathode layer 9 is formed on the organic functional layer 7 (cathode layer forming step (forming step) S04). Thecathode layer 9 can be formed by a formation method exemplified in the description of thecathode layer 9. Thereby, a plurality oforganic EL parts 10 are formed on thesupport substrate 3. - Subsequently, the sealing
member 11 is bonded (bonding step S05). The sealingmember 11 has a predetermined width and extends in the longitudinal direction of thesupport substrate 3. Specifically, as shown inFIG. 3 , the sealingmember 11 has a width that is set so that respective parts of theanode layer 5 and thecathode layer 9 are exposed and has a strip shape. The sealingmember 11 has flexibility. In the sealingmember 11, theadhesive part 17 is provided on one surface of the sealingsubstrate 19. The sealingmember 11 may be cut into a strip shape after theadhesive part 17 is formed on one surface of the sealingsubstrate 19 with thebarrier layer 18 therebetween or theadhesive part 17 may be formed on one surface of the sealingsubstrate 19 with thebarrier layer 18 therebetween after the sealingsubstrate 19 is cut into a strip shape. - The sealing
member 11 is affixed to a plurality oforganic EL parts 10 so that a part of theanode layer 5 and a part of the cathode layer 9 (a part of theextraction electrode 13 and a part of the extraction electrode 15) are exposed. Specifically, the sealingmember 11 is affixed in one direction to straddle the plurality oforganic EL parts 10. In the roll-to-roll method, theorganic EL part 10 and the sealingmember 11 formed on thesupport substrate 3 are bonded while transporting thesupport substrate 3. Thesupport substrate 3 and the sealingmember 11 pass between heating rollers (not shown). Thereby, thesupport substrate 3 and the sealingmember 11 are heated by the heating rollers and pressed. Thereby, theadhesive part 17 is softened, and theadhesive part 17 is brought into close contact with theorganic EL part 10. Bonding of theorganic EL part 10 and the sealingmember 11 is preferably performed in an environment with a low water concentration and particularly preferably performed under a nitrogen atmosphere. - Subsequently, the plurality of
organic EL parts 10 to which the sealingmember 11 is bonded are separated into pieces (cutting step S06). As shown inFIG. 3 , in the cutting step S06, thesupport substrate 3 and the sealingmember 11 are cut along a cutting line L, and the plurality oforganic EL parts 10 to which the sealingmember 11 is bonded are separated into pieces. Specifically, as shown inFIG. 4 andFIG. 5 , thesupport substrate 3 and the sealingmember 11 are supported by asupport 100, and thesupport substrate 3 is cut by a cutting blade B.FIG. 4 is a diagram of the cross section in the X direction inFIG. 3 when viewed in the Y direction and shows a cross section at a position including theanode layer 5 and the organicfunctional layer 7.FIG. 5 is a diagram of the cross section in the X direction inFIG. 3 when viewed in the Y direction and shows a cross section at a position not including theanode layer 5 and the organicfunctional layer 7. - The
support 100 supports an area of the onemain surface 3a of thesupport substrate 3 to which the sealingmember 11 is not bonded (hereinafter referred to as an "area Z") and the sealingmember 11. Thesupport 100 has a space S in which theorganic EL part 10 and the sealingmember 11 are able to be accommodated. The space S is defined by a pair ofsides support 100, a part that faces the bottom 100c is open. The space S extends in the longitudinal direction of thesupport substrate 3. That is, in the space S, a plurality oforganic EL parts 10 provided in the longitudinal direction of thesupport substrate 3 at predetermined intervals are able to be accommodated. As shown inFIG. 4 , thesupport 100 may have a groove C. The groove C is provided at a position (a position at which the onemain surface 3a is mounted) at which the cutting blade B enters. The groove C extends in the longitudinal direction of thesupport substrate 3. The depth of the groove C is provided to be equal to that of the bottom 100c forming the space S or lower than that of the bottom 100c. - The cutting blade B has a shape conforming to the cutting line L and has a frame shape. In the present embodiment, in the cutting blade B, four blade members are provided together. For example, a plurality of cutting blades B are provided. Thereby, in the cutting step S06, the plurality of
organic EL parts 10 to which the sealingmember 11 is bonded at one time can be separated into pieces. In the cutting step S06, as shown inFIG. 4 andFIG. 5 , thesupport substrate 3 in which the plurality oforganic EL parts 10 are formed is supported by thesupport 100. Specifically, thesupport substrate 3 is supported by thesupport 100 so that the sealingmember 11 comes in contact with the bottom 100c of thesupport 100 and the area Z (the area in which the organicfunctional layer 7 is not formed) of thesupport substrate 3 comes in contact with thesupport 100. Then, the cutting blade B is made to enter from the side of the othermain surface 3b of thesupport substrate 3. The cutting blade B is advanced to a position at which the tip thereof reaches the surface (the surface of the sealing substrate 19) of the sealingmember 11. Thereby, the plurality oforganic EL parts 10 to which the sealingmember 11 is bonded are separated into pieces. Thereby, theorganic EL element 1 shown inFIG. 1 is manufactured. - As described above, in the method for manufacturing the
organic EL element 1 according to the present embodiment, in the cutting step S06, while supporting the area Z of thesupport substrate 3 to which the sealingmember 11 is not bonded and the sealingmember 11, the cutting blade B is made to enter from the side of the othermain surface 3b of thesupport substrate 3. In this method, since thesupport substrate 3 and the sealingmember 11 are supported, when thesupport substrate 3 is cut, bending of thesupport substrate 3 at a part to which the sealingmember 11 is not bonded is prevented. Therefore, in the method for manufacturing theorganic EL element 1, individualorganic EL elements 1 can be appropriately separated into pieces. - In the method for manufacturing the
organic EL element 1 according to the present embodiment, in the cutting step S06, the area Z and the sealingmember 11 are supported by thesupport 100 in contact with the area Z of thesupport substrate 3 and the sealingmember 11. In this method, the area Z of thesupport substrate 3 and the sealingmember 11 can be appropriately supported by thesupport 100. Therefore, individualorganic EL elements 1 can be separated into pieces more appropriately. - In the method for manufacturing the
organic EL element 1 according to the present embodiment, in the cutting step S06, thesupport 100 having the space S in which theorganic EL part 10 and the sealingmember 11 are able to be accommodated and which extends in the longitudinal direction of thesupport substrate 3 is used. In the cutting step S06, when theorganic EL part 10 and the sealingmember 11 are positioned in the space S and the sealingmember 11 is in contact with the bottom 100c that defines the space S, the cutting blade B is made to enter from the side of the othermain surface 3b of thesupport substrate 3. In this method, thesupport substrate 3 can be supported by thesupport 100 while transporting thesupport substrate 3. Therefore, in the method for manufacturing theorganic EL element 1, the workability in the cutting step S06 can be improved. - In the method for manufacturing the
organic EL element 1 according to the present embodiment, in thesupport 100 used in the cutting step S06, the groove C into which the cutting blade B can enter is provided at a position at which the area Z of thesupport substrate 3 is supported. Thereby, in the method for manufacturing theorganic EL element 1, thesupport substrate 3 can be cut while thesupport substrate 3 is supported by thesupport 100. - While embodiments of the present invention have been described above, the present invention is not necessarily limited to the above embodiments, and various modifications can be made without departing from the spirit and scope of the invention.
- For example, in the above embodiment, the
organic EL element 1 in which the organicfunctional layer 7 including a light emitting layer is disposed between theanode layer 5 and thecathode layer 9 has been exemplified. However, the configuration of the organicfunctional layer 7 is not limited thereto. The organicfunctional layer 7 may have the following configuration. - (a) (anode layer)/light emitting layer/(cathode layer)
- (b) (anode layer)/hole injection layer/light emitting layer/(cathode layer)
- (c) (anode layer)/hole injection layer/light emitting layer/electron injection layer/(cathode layer)
- (d) (anode layer)/hole injection layer/light emitting layer/electron transport layer/electron injection layer/(cathode layer)
- (e) (anode layer)/hole injection layer/hole transport layer/light emitting layer/(cathode layer)
- (f) (anode layer)/hole injection layer/hole transport layer/light emitting layer/electron injection layer/(cathode layer)
- (g) (anode layer)/hole injection layer/hole transport layer/light emitting layer/electron transport layer/electron injection layer/(cathode layer)
- (h) (anode layer)/light emitting layer/electron injection layer/(cathode layer)
- (i) (anode layer)/light emitting layer/electron transport layer/electron injection layer/(cathode layer)
- Here, the symbol "/" indicates that layers between which the symbol "/" is interposed are laminated adjacent to each other. The configuration shown in the above (a) is a configuration of the
organic EL element 1 in the above embodiment. - Regarding materials of a hole injection layer, a hole transport layer, an electron transport layer and an electron injection layer, known materials can be used. The hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer can be formed by, for example, a coating method as in the organic
functional layer 7. - Here, the electron injection layer may contain an alkali metal or an alkaline earth metal, or an oxide or fluoride of an alkali metal or an alkaline earth metal. Examples of a film forming method of an electron injection layer include a coating method and a vacuum deposition method. In the case of the oxide and fluoride, the thickness of the electron injection layer is preferably 0.5 nm to 20 nm. Particularly, when insulation properties are strong, the electron injection layer is preferably a thin film in order to reduce increase in the drive voltage of the
organic EL element 1, and the thickness thereof is preferably, for example, 0.5 nm to 10 nm, and more preferably 2 nm to 7 nm in consideration of electron injection properties. - The
organic EL element 1 may include a single organicfunctional layer 7 or two or more organicfunctional layers 7. In any one of the above (a) to (i) layer configuration, when a lamination structure disposed between theanode layer 5 and thecathode layer 9 is set as a "structural unit A," as a configuration of an organic EL element including two organicfunctional layers 7, a layer configuration shown in the following (j) may be exemplified. Two layer configurations (structural unit A) may be the same as or different from each other. (j) anode layer/(structural unit A)/charge generation layer/(structural unit A)/cathode layer - Here, the charge generation layer is a layer that generates a hole and an electron when an electric field is applied. Examples of the charge generation layer include a thin film made of vanadium oxide, ITO, molybdenum oxide, or the like.
- When "(structural unit A)/charge generation layer" is set as a "structural unit B," as a configuration of an organic EL element including three or more organic
functional layers 7, a layer configuration shown in the following (k) may be exemplified. (k) anode layer/(structural unit B)x/(structural unit A)/cathode layer - The symbol "x" denotes an integer of 2 or more, and "(structural unit B)x" denotes a laminate in which x (structural units B) are laminated. A plurality of (structural unit B) layer configurations may be the same as or different from each other.
- A plurality of organic
functional layers 7 may be directly laminated without providing the charge generation layer to form an organic EL element. - In the above embodiment, a form in which the
anode layer 5 is formed on thesupport substrate 3 has been exemplified. However, a roller in which theanode layer 5 is formed on thesupport substrate 3 in advance may be used. - In the above embodiment, a form in which, in the method for manufacturing the
organic EL element 1, a step of heating and drying thesupport substrate 3 is performed has been exemplified. However, the drying step of thesupport substrate 3 may not necessarily be performed. - In the above embodiment, a form in which the space S and the groove C are provided in the
support 100 has been exemplified. However, in the cutting step S06, in a form in which the area Z of thesupport substrate 3 to which the sealingmember 11 is not bonded and the sealingmember 11 are supported, thesupport 100 may not be used. For example, in the cutting step S06, while the sealingmember 11 is mounted on the table or the like, the area Z of thesupport substrate 3 may be supported by the support member (for example, a columnar member or the like). - In the above embodiment, a form in which the cutting blade B has a frame shape has been exemplified. However, the shape of the cutting blade is not limited thereto. The cutting blade may have any shape as long as it can cut along the cutting line.
- In the above embodiment, the organic EL element has been exemplified as an organic device. The organic device may be an organic thin film transistor, an organic photodetector, an organic thin film solar cell or the like.
- In the above embodiment, a form in which the first electrode layer is the
anode layer 5 and the second electrode layer is thecathode layer 9 has been exemplified. However, the first electrode layer may be the cathode layer and the second electrode layer may be the anode layer. - In the above embodiment, a form including the
extraction electrodes - In the above embodiment, as shown in
FIG. 4 , a form in which the electrode layer including theextraction electrode 13 and theextraction electrode 15 is in contact with thesupport 100 has been exemplified. However, the onemain surface 3a of thesupport substrate 3 may be in contact with thesupport 100. - In the above embodiment, as shown in
FIG. 4 , a form in which a part of the area Z is supported by thesupport 100 has been exemplified. However, the entire area Z may be supported by the support. - A method for manufacturing an organic device according to one aspect of the present invention includes a forming step of forming a plurality of organic device parts in which at least a first electrode layer, an organic functional layer and a second electrode layer are laminated in this order at predetermined intervals on one main surface of a support substrate which extends in one direction, a bonding step of bonding a sealing member which extends in the one direction in the one direction so that respective parts of the first electrode layer and the second electrode layer in the organic device parts are exposed and straddle the plurality of organic device parts, and a cutting step of separating the plurality of organic device parts to which the sealing member is bonded into pieces. In the cutting step, while an area of the one main surface of the support substrate to which the sealing member is not bonded and the sealing member are supported, the cutting blade is made to enter from the side of the other main surface of the support substrate.
- In the method for manufacturing an organic device according to one aspect of the present invention, in the cutting step, while an area of the one main surface of the support substrate to which the sealing member is not bonded and the sealing member are supported, the cutting blade is made to enter from the side of the other main surface of the support substrate. In this method, since the support substrate and the sealing member are supported, when the support substrate is cut, bending of the support substrate at a part to which the sealing member is not bonded is prevented. Therefore, in the method for manufacturing an organic device, the organic devices can be appropriately separated into pieces.
- In one embodiment, in the cutting step, the area and the sealing member may be supported by the support in contact with the area and the sealing member. In this method, the area and the sealing member can be appropriately supported by the support. Therefore, the organic device can be separated into pieces more appropriately.
-
- 1 Organic EL element (organic device)
- 3 Support substrate
- 3a One main surface
- 3b Other main surface
- 5 Anode layer (first electrode layer)
- 7 Organic functional layer
- 9 Cathode layer (second electrode layer)
- 10 Organic EL part (organic device part)
- 11 Sealing member
- 100 Support
- B Cutting blade
- C Groove
- S Space
Claims (3)
- A method of producing an organic device, comprising:a forming step of forming a plurality of organic device parts in which at least a first electrode layer, an organic functional layer and a second electrode layer are laminated in this order are formed at predetermined intervals on one main surface of a support substrate which extends in one direction;a bonding step of bonding a sealing member which extends in the one direction is bonded in the one direction so that respective parts of the first electrode layer and the second electrode layer in the organic device parts are exposed and straddle the plurality of organic device parts; anda cutting step of separating the plurality of organic device parts to which the sealing member is bonded are separated into pieces,wherein, in the cutting step, while an area of the one main surface of the support substrate to which the sealing member is not bonded and the sealing member are supported by a support in contact with the area and the sealing member, a cutting blade is made to enter from the side of the other main surface of the support substrate.
- The method of producing an organic device according to claim 1,
wherein the support has a space in which the organic device part and the sealing member are able to be accommodated and which extends in the one direction, and
wherein, in the cutting step, when the organic device part and the sealing member are positioned in the space and the sealing member is in contact with one surface that defines the space, the cutting blade is made to enter from the side of the other main surface. - The method of producing an organic device according to claim 1 or 2,
wherein, in the support, a groove in which the cutting blade is able to enter is provide at a position at which the area of the one main surface is supported.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2017086104A JP6284670B1 (en) | 2017-04-25 | 2017-04-25 | Manufacturing method of organic device |
PCT/JP2018/013010 WO2018198655A1 (en) | 2017-04-25 | 2018-03-28 | Manufacturing method for organic device |
Publications (2)
Publication Number | Publication Date |
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EP3618576A1 true EP3618576A1 (en) | 2020-03-04 |
EP3618576A4 EP3618576A4 (en) | 2021-02-24 |
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EP18792129.1A Withdrawn EP3618576A4 (en) | 2017-04-25 | 2018-03-28 | Manufacturing method for organic device |
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US (1) | US20200067028A1 (en) |
EP (1) | EP3618576A4 (en) |
JP (1) | JP6284670B1 (en) |
KR (1) | KR20200002855A (en) |
CN (1) | CN110574493A (en) |
WO (1) | WO2018198655A1 (en) |
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JP6393362B1 (en) * | 2017-04-25 | 2018-09-19 | 住友化学株式会社 | Manufacturing method of organic device |
CN116528603A (en) * | 2023-05-31 | 2023-08-01 | 广州追光科技有限公司 | Organic solar cell and preparation method thereof |
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JP3620706B2 (en) * | 2000-04-13 | 2005-02-16 | 日本精機株式会社 | Manufacturing method of organic EL panel |
JP2007005060A (en) * | 2005-06-22 | 2007-01-11 | Fuji Electric Holdings Co Ltd | Manufacturing method of organic el display |
WO2007034647A1 (en) * | 2005-09-20 | 2007-03-29 | Konica Minolta Holdings, Inc. | Process for producing organic electroluminescent element and organic electroluminescent display device |
JP4862578B2 (en) * | 2006-09-19 | 2012-01-25 | コニカミノルタホールディングス株式会社 | Method for manufacturing organic electroluminescence panel |
JP5573678B2 (en) | 2008-12-10 | 2014-08-20 | コニカミノルタ株式会社 | Method for manufacturing organic electroluminescent element, organic electroluminescent element |
JP2010170776A (en) * | 2009-01-21 | 2010-08-05 | Konica Minolta Holdings Inc | Organic electroluminescent element and its manufacturing method |
KR101127594B1 (en) * | 2010-04-15 | 2012-03-23 | 삼성모바일디스플레이주식회사 | Flat display device |
EP2648480A4 (en) * | 2010-11-30 | 2017-05-17 | Kaneka Corporation | Organic el device |
TWI451610B (en) * | 2011-05-17 | 2014-09-01 | Au Optronics Corp | Mother substrate structure of light emitting devices and light emitting device and method of fabricating the same |
JP2014101269A (en) * | 2012-10-25 | 2014-06-05 | Nippon Electric Glass Co Ltd | Cutting method of glass film |
JP5954549B2 (en) * | 2014-08-01 | 2016-07-20 | 日東電工株式会社 | Method for handling display cell of flexible thin film structure |
-
2017
- 2017-04-25 JP JP2017086104A patent/JP6284670B1/en not_active Expired - Fee Related
-
2018
- 2018-03-28 CN CN201880027278.4A patent/CN110574493A/en active Pending
- 2018-03-28 WO PCT/JP2018/013010 patent/WO2018198655A1/en unknown
- 2018-03-28 KR KR1020197031582A patent/KR20200002855A/en not_active Application Discontinuation
- 2018-03-28 EP EP18792129.1A patent/EP3618576A4/en not_active Withdrawn
- 2018-03-28 US US16/608,090 patent/US20200067028A1/en not_active Abandoned
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EP3618576A4 (en) | 2021-02-24 |
WO2018198655A1 (en) | 2018-11-01 |
US20200067028A1 (en) | 2020-02-27 |
CN110574493A (en) | 2019-12-13 |
JP2018185926A (en) | 2018-11-22 |
JP6284670B1 (en) | 2018-02-28 |
KR20200002855A (en) | 2020-01-08 |
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