EP3523986A1 - Capteur de pression, en particulier microphone a agencement amélioré - Google Patents
Capteur de pression, en particulier microphone a agencement amélioréInfo
- Publication number
- EP3523986A1 EP3523986A1 EP17792115.2A EP17792115A EP3523986A1 EP 3523986 A1 EP3523986 A1 EP 3523986A1 EP 17792115 A EP17792115 A EP 17792115A EP 3523986 A1 EP3523986 A1 EP 3523986A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- substrate
- cavity
- support
- conductive
- electromechanical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems ; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems ; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/005—Electrostatic transducers using semiconductor materials
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems ; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0061—Packages or encapsulation suitable for fluid transfer from the MEMS out of the package or vice versa, e.g. transfer of liquid, gas, sound
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00047—Cavities
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
- H04R1/00—Details of transducers, loudspeakers or microphones
- H04R1/02—Casings; Cabinets ; Supports therefor; Mountings therein
- H04R1/04—Structural association of microphone with electric circuitry therefor
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0257—Microphones or microspeakers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0127—Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/03—Static structures
- B81B2203/0315—Cavities
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/03—Static structures
- B81B2203/0353—Holes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/01—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS
- B81B2207/012—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS the micromechanical device and the control or processing electronics being separate parts in the same package
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/09—Packages
- B81B2207/091—Arrangements for connecting external electrical signals to mechanical structures inside the package
- B81B2207/094—Feed-through, via
- B81B2207/096—Feed-through, via through the substrate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
- H10W70/63—Vias, e.g. via plugs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
- H10W70/68—Shapes or dispositions thereof
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
- H10W70/68—Shapes or dispositions thereof
- H10W70/681—Shapes or dispositions thereof comprising holes not having chips therein, e.g. for outgassing, underfilling or bond wire passage
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
- H10W70/68—Shapes or dispositions thereof
- H10W70/682—Shapes or dispositions thereof comprising holes having chips therein
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/073—Connecting or disconnecting of die-attach connectors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/251—Materials
- H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/853—On the same surface
- H10W72/865—Die-attach connectors and bond wires
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
- H10W72/879—Bump connectors and bond wires
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
- H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/732—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
Definitions
- the present application relates to the field of electromechanical systems, and more particularly to that of pressure sensor systems and advantageously microphones equipped with at least one electromechanical component M EMS (for "microelectromechanical Systems” according to the English terminology) and / or NEMS (NEMS for "nano-electromechanical Systems”).
- M EMS for "microelectromechanical Systems” according to the English terminology
- NEMS for "nano-electromechanical Systems”
- the M EMS and / or NEMS component of a pressure sensor and in particular a microphone comprises a sensitive element, typically in the form of an oscillating membrane, which deforms under the effect of a pressure differential between its two faces. .
- the membrane is generally deformed in an out-of-plane direction, i.e. perpendicular to the main plane of the electromechanical component.
- a motion caused by an incoming sound wave is translated by an electrical signal, for example a signal due to a capacitance change between a fixed electrode and a mobile electrode fixed on the membrane or formed by the membrane.
- the electromechanical component is generally associated and connected to an electronic component such as a chip or an ASIC (acronym of the English “Application-Specific I ntegrated Circuit", literally “integrated circuit specific to an application") provided with means signal processing from the electromechanical component.
- the electronic component and the electromechanical component are typically disposed on an assembly substrate and placed in an enclosure formed by the assembly substrate and a protective cover.
- the assembly substrate may comprise connections and be brought to be transferred to an electronic card.
- the volume of the rear chamber which designates the volume in the enclosure located behind or on the side of the rear face of the membrane, that is to say on the side of the opposite side to that, called the front face, against which a sound wave entering through the input port arrives first.
- This volume of the rear chamber or “rear volume” represents a compensation volume when the membrane oscillates. It is generally sought to maximize this rear volume in order to increase the performance of the microphone especially in terms of signal-to-noise and low-frequency response.
- US 9 264 815 B2 provides a microphone system in which, to reduce bulk, an ASIC is disposed in a cavity on the side of the upper face of an assembly substrate while the electromechanical component is disposed above the ASIC.
- the acoustic wave input port is an opening in a hood, this cap being disposed on the upper face of the substrate. Due to the presence of the ASIC in the cavity, such a system has a reduced rear chamber volume, which can adversely affect its performance.
- an electromechanical transducer equipped with a sensitive element able to move under the effect of a pressure difference between its faces
- a substrate for receiving at least one electromechanical transducer support and / or signal processing means, the substrate having an upper face and a lower face opposite to the upper face, the lower face being provided with at least one a conductive zone capable of being connected with an electronic card, the substrate further comprising an opening passing through its thickness, the opening comprising a first hole opening at the upper face of the substrate and in the extension of the first hole a first cavity opening at level of the lower face of the substrate, the first cavity having a width greater than that of the first hole so as to form a shoulder, the support of the electromechanical transducer and / or signal processing means being housed in the first cavity so that a region of a front face of the support is supported on a support zone of the shoulder.
- the first cavity can form an acoustic wave input port.
- the arrangement of the system may be such that the first hole is closed by said support, while the cover has an opening forming an acoustic wave input port.
- a second hole distinct from the first hole is in the extension of the first cavity. The support can then be connected to the substrate via a conductive wire passing through the second hole.
- the present invention relates in particular to an electromechanical pressure sensor system comprising:
- a first structure comprising an electromechanical transducer equipped with a sensitive element able to move under the effect of a pressure difference between its faces
- a second structure comprising signal processing means, for the processing of the signals resulting from a displacement of the sensitive element
- a substrate for receiving the first structure and the second structure, the substrate comprising an upper face and a lower face opposite to the upper face, the first structure and the second structure being disposed in one or more cavities formed (s) in the substrate and opening at at least one of the faces of the substrate, the lower face being provided with at least one conductive connection zone,
- a first cavity among said cavities in which the first structure is disposed opening on the rear face of the substrate said first cavity communicating with a first hole passing through the substrate between said first cavity and the upper face of the substrate, the cavity having a width greater than that said first hole so as to form a shoulder, a front face of the first structure bearing on a bearing zone of the shoulder.
- a shoulder may facilitate assembly between the substrate and the first structure which may be parts made independently of one another.
- Such a system can form a microphone or be integrated into a microphone.
- Such an arrangement of the support allows a gain in compactness.
- the electromechanical system may be provided with a protective cover arranged on the upper face of the substrate.
- the bearing zone of the shoulder is in particular an area of a plane located at the interface or at the boundary between the first cavity and the first hole. An arrangement on such a zone allows a robust maintenance of the first structure.
- the system may comprise a connection structure between the conductive zone located on the underside of the substrate and a conductive zone of a support of the first structure, the connection structure comprising at least one conductive element. crossing the substrate.
- a connection structure between the conductive zone located on the underside of the substrate and a conductive zone of a support of the first structure, the connection structure comprising at least one conductive element. crossing the substrate.
- connection structure comprises a conductive wire passing through the first hole connecting a conductive zone located on the upper face of the substrate and a conductive zone of the support of the first structure.
- connection structure passes through the substrate and has a curved shape, the conductive element being arranged so as to connect the bearing zone of the shoulder and said conductive zone located on the underside of the substrate.
- the electromechanical transducer is integrated in a support and the sensitive element is disposed on the side of the front face of this support.
- the sensitive element is disposed on the side of the front face of this support.
- these can be integrated in the same support as the transducer.
- the electromechanical transducer is integrated in a first support
- the signal processing means are integrated in a second support separate from the first support.
- the second support may advantageously be disposed in a second cavity opening at the lower face of the substrate, the second cavity communicating with a second hole, the second hole having a width smaller than that of the second cavity and opening at level of the upper face of the substrate.
- the signal processing means are integrated with a second support disposed in another cavity that is distinct from the first cavity, this other cavity opening at the level of the upper face of the substrate.
- the first support can be connected to a front face of the second support via a conductive wire passing through the first hole.
- the second support can be connected to the substrate via another conductive wire.
- the second support may be provided with one or more conductive elements through to allow a connection between its front face and its rear face.
- the conducting wire connecting the first support and the second support and / or the other conductive wire connecting the second support to the substrate can be respectively connected to a conductive element passing through the second support.
- FIG. 1 illustrates an example of an electromechanical system forming an improved arrangement microphone in which an electromechanical MEMS and / or NEMS component is housed in a cavity located on the lower face of an assembly substrate;
- FIG. 2 illustrates another exemplary implementation of the system with a connection structure with a compact arrangement between the electromechanical component and the lower face of the assembly substrate
- FIG. 3 illustrates another exemplary implementation of the system with an electronic component provided with signal processing means derived from the MEMS and / or NEMS component, this electronic component being housed in a cavity of the substrate distinct from that in which find the electromechanical component;
- FIG. 4 illustrates an implementation variant for which the electronic component is provided with through vias to enable contact to be made at its rear face situated on the side of the lower face of the substrate;
- FIG. 5 illustrates another example of implementation of the electromechanical system in which the rear chamber extends in a hole made in the substrate and situated between the electromechanical component and the electronic component, the latter being placed in a cavity located on the side of the underside of the substrate;
- FIG. 6 illustrates an alternative arrangement of the electromechanical system in which the electronic component is provided on the rear face with conductive balls
- FIG. 7 illustrates another example of implementation of the electromechanical system in which the electromechanical component is disposed in a cavity located on the side of the underside of the substrate while the electronic component is arranged in a cavity located on the side of the upper face of the substrate;
- FIG. 8 illustrates another example of implementation of the electromechanical system in which the electromechanical component and the electronic component are respectively arranged in a cavity and in another cavity situated on the side of the underside of the substrate, these components being connected to the substrate through a connection of the type of those of the embodiment of Figure 2;
- FIGS. 9A-9E illustrate an exemplary method of manufacturing an electro-mechanical pressure sensor system implemented according to an embodiment of the present invention
- FIG. 1 An example of an electromechanical system forming a microphone for converting pressure variations into electrical signal variations is illustrated in FIG.
- the electromechanical system comprises an assembly substrate 1 which may be based on optionally filled polymer material (s) or based on ceramic material or semiconductor material such as silicon.
- the thickness of the substrate 1 (dimension measured in a direction orthogonal to the main plane of the substrate 1 and parallel to the z axis of the orthogonal reference [0; x; y; z]) may be between 100 ⁇ and 700 ⁇ .
- "Main plane” means a plane passing through the substrate and parallel to the plane [O; x; y].
- the assembly substrate 1 comprises a recess 12 or a cavity 12, in the extension of which is provided a hole 13 opening at an upper face 3 of the substrate 1, that is to say the face opposite to the lower face 5.
- the cavity 12 is provided with a width W greater than W 2 of the hole 13 so as to form a shoulder.
- the widths W 1 and W 2 are dimensions measured parallel to the main plane of the substrate 1, ie in the plane [O; x; y].
- An electromechanical component 20 M EMS and / or NEMS is disposed in the cavity 12.
- the electromechanical component 20 of type M EMS and / or N EMS housed in the cavity 12 is in the form of a support, for example in silicon and is provided with a sensitive element such as a membrane 21 able to vibrate under the effect of acoustic waves.
- the membrane 21 is located on the side of a face of the support called "front face”. peripheral region of the front face 23 and which is around the membrane 21 is supported on a zone 15 called "bearing zone" of the substrate 1 located at the bottom of the cavity 12 and forming a step or a shoulder. This bearing zone 15 is in a plane P located at the interface between the hole 13 and the cavity 12.
- the bearing zone 15 forms a non-zero angle with a normal to the main plane of the substrate 1.
- the support zone 15 is parallel to the main plane of the substrate 1.
- This support zone 15 makes it easier to assemble the electromechanical component 20 which can be made in particular by gluing and / or brazing and / or welding.
- Such a type of configuration makes it possible to provide for the reception substrate 1 and the electromechanical component independently of one another and then to assemble them later.
- This support zone also allows robust maintenance of the electromechanical component 20 on the receiving substrate.
- the cavity 12 serves as an input port for the acoustic waves making it possible to vibrate the membrane 21.
- the acoustic waves thus penetrate through the rear face 25 of the electromechanical component 20, ie the face of the component electromechanical 20 opposite to the front face 23.
- the cavity 12 and the hole 13 in its extension thus form an opening passing through the thickness of the substrate 1 and which is at least partially closed off by the membrane 21 of the electromechanical component 20.
- a volume located from the side of the front face of the electromechanical component 20 and the substrate 1 and defined by a cap 40 forms the rear chamber of the pressure sensor system.
- the cap 40 may for example be made of a metallic material, or a ceramic material, or a plastic material, or a semiconductor material such as silicon, and disposed on the front face 3 of the substrate 1 so as to provide a protective enclosure 8, the cover being preferably closed and does not include in this example no opening.
- the arrangement of the electromechanical component 20 in the cavity 12 provides a rear chamber of large volume in which the membrane 21 is intended to oscillate.
- the arrangement of the electromechanical component 20 is preferably provided so as to have a small volume between the front face of the diaphragm 21 and the lower face 5 of the substrate 1. If necessary, the electromechanical component 20 may protrude from the underside of the substrate 1.
- the electromechanical component 20 is electrically connected to the assembly substrate 1 by means of at least one conductive wire 27 which passes through the hole 13.
- the conductive wire 27 is bent and connects a conductive zone 22 located on the front face 23 of the MEMS and / or NEMS component 20 to a conductive zone 14 of the upper face 3 of the substrate 1.
- the substrate 1 may be provided with at least one through-conductive element 17, also called "via", which extends in the thickness of the substrate 1.
- one or more conductive balls 19 or solder balls may be arranged on the lower face 5 of the substrate 1, and in particular on conductive areas 16, for example in the form of pads.
- FIG. 2 An alternative arrangement illustrated in FIG. 2 provides an interconnection structure between the substrate 1 and a more robust and compact electromechanical component 20.
- the interconnection structure between the electromechanical component 20 and the substrate 1 extends essentially in the thickness of the substrate 1 and makes it possible to electrically connect the lower face 5 of the substrate 1 to the front face 23 of the electromechanical component 20 .
- a region 23a located at the periphery of the front face of the MEMS component 20 is conductive, and is connected, via a conductive ball 52 to a conductive zone 14 'of the substrate 1 situated at the bottom of the cavity 12 at the level of the shoulder.
- a conductive element 57 through is provided in the thickness of the substrate 1.
- This conductive element 57 comprises a first conductive portion 57a which extends from the connection zone 16 in a first direction forming a non-zero angle with the main plane of the substrate 1, the first direction being typically orthogonal to the main plane of the substrate 1.
- the first conductive portion 57a is connected to a second conductive portion 57b which extends in a second direction, typically parallel to the main plane of the substrate 1.
- the portions 57a, 57b thus form an angle or an elbow.
- the second conductive portion 57b extends to the hole 13 and can be connected to a third conductive portion 57c which extends towards the bottom of the cavity 12 to the conductive zone 14 'located at the shoulder.
- the conducting element 57 thus has a curved shape, in particular a U shape.
- the electromechanical component 20 may be provided with integrated signal processing means.
- signal processing is meant at least one function of amplification and / or filtering, and / or signal shaping.
- electromechanical transducer in particular electroacoustic
- signal processing means resulting from a vibration of the membrane 21 of the electromechanical component 20.
- the signal processing means are integrated in a separate support of the MEMS and / or NEMS component 20, in particular an electronic component 30, such as a chip or an ASIC. There is then a transducer structure on a first support and another structure comprising signal processing means on a second support different from the first support.
- the electronic component 30 is disposed in a second cavity 112 provided at the lower face 5 of the substrate 1 and which is separated from the cavity 12 in which the MEMS component 20 is housed.
- a second hole 113 opening at an upper face 3 of the substrate 1, that is to say the face opposite to the lower face 5.
- the cavity 112 is also provided with a width greater than that of the second hole 113 so as to form a shoulder.
- a region of the component 30 is supported on a bearing zone 115 of the substrate 1 located at the bottom of the cavity 112 and forming a shoulder.
- This bearing zone 115 is in a plane P 'situated at the interface between the second hole 113 and the second cavity 112.
- the support zone 115 is parallel to the main plane of the substrate 1.
- the electromechanical component 20 and the electronic component 30 are connected to each other via a conductive element.
- the conductive element is typically a curved conductive wire 67 which extends into the closed enclosure and passes through the hole 13 formed in the substrate 1.
- the conductive wire 67 extends towards the second hole 113 arranged in the 1 and which is in the extension of the second cavity 112 for receiving the electronic component 30.
- the conductive wire 67 thus connects the front face 23 of the electromechanical component 20 and the front face 33 of the electronic component 30.
- another curved conductive wire 77 extends from the front face 33 of the electronic component 30 to a conductor zone 14 located on the upper face 3 of the substrate 1.
- This conductive zone 14 may itself be electrically connected to a conductive zone 16 located on the lower face of the substrate 1, for example via a via via (not shown in FIG. 3 but which may be of the type with the one with 17 in Figure 1).
- a variant of the arrangement described above provides for an electrical contact on the rear face 35 (i.e. a face opposite to the front face 33) of the electronic component 30 situated on the side of the lower face 5 of the substrate 1.
- one or more conductive zones are disposed on the rear face 35 of the electronic component 30 to enable connection and possible assembly, for example with an electronic card intended to be arranged on the lower face. of the substrate l.
- conductive elements 87 passing through the thickness of the component 30, for example in the form of vias TSV (TSV for "through silicon via”) may be provided.
- the conducting wire 67 connecting the MEMS and / or NEMS component 20 and the electronic component 30 is itself connected to the rear face of the electronic component 30 via a conducting element 87a passing through.
- the conductive wire 77 connecting the electronic component 30 and the substrate 1 may itself be connected to the rear face 35 of the electronic component 30 via another conducting element 87b therethrough.
- the input port of the acoustic waves is located on the side of the lower face 5 of the substrate 1.
- an acoustic wave input port can be provided. at the hood 40.
- the cover 40 then comprises at least one opening 43, while the rear face 5 of the substrate 1 can be closed.
- Such a type of configuration is illustrated in the particular embodiment of FIG. 5, in which the electromechanical component 20 is this time disposed on the upper face 3 of the substrate 1, the membrane 21 being suspended above and below distance from the upper face 3 of the substrate 1.
- the electronic component 30 is in turn housed in a cavity 212 of the substrate 1 in the extension of which holes 213, 313 are provided.
- a hole 313 serves to pass one or more conducting wires 177 to allow a connection of the electronic component 30 with the substrate 1.
- the membrane 21 of the electromechanical component 20 extends opposite another hole 213 separated from the hole 313 by a portion of substrate. This other hole 213 forms in this example part of the rear chamber of the micro-phone.
- the electronic component 30 may be arranged to close the holes 213, 313 on the side of the underside of the substrate 1, the enclosure being open only on the side of the opening 43 provided in the cover.
- the substrate 1 and the electromechanical component 20 are connected via a conductive element such as a conductive wire 167, which connects a conductive zone 22 located on the front face 23 of the MEMS and / or NEMS component, and a conductive zone 14 of the upper face 3 of the substrate 1.
- a conductive zone 16 located on the lower face 5 to the zone 4 the substrate 1 may be provided with at least one through-conductive element which connects the upper face 3 and the lower face 5 of the substrate 1. It is also possible to provide a microstrip. conductive wiring to enable the electronic component 30 to be connected to the MEMS component 20.
- FIG. 6 A similar arrangement is illustrated in FIG. 6, this time using conductive balls 89a, 89b to make it possible to establish a rear-face contact 35 of the electronic component 30 and possible assembly with another device, in particular an electronic card.
- FIG. 7 Another configuration example for obtaining a small footprint and a large rear volume is illustrated in Figure 7.
- the system has an input port located on the side the lower face 5 of the substrate 1.
- the electronic component 30 is this time disposed in a cavity 412 located on the side of the upper face 3 of the substrate 1.
- the respective cavities 12, 412 of the MEMS component 20 and the electronic component 30 are distinct. and do not communicate.
- the electromechanical component 20 is arranged in the cavity 12 located at the lower face 5 of the substrate 1 while the electronic component 30 is disposed in another cavity 112 provided at the lower face 5.
- This arrangement differs from that described above in connection with FIG. 3 or FIG. 4, in particular in that the electromechanical component 20 and the electronic component 30 are connected to the substrate by means of conductive elements.
- These conductive elements 57 are of the type of those described above in connection with FIG. 2.
- the conductive elements 57 extend in the substrate 1 and open at its lower face 5 on conductive zones.
- a region 23a situated at the periphery of the front face of the MEMS component 20 is conductive, and is connected, via a conductive zone to a conductive zone 14 'of the substrate 1 situated at the bottom of the cavity 12 at the level of the shoulder.
- the latter comprises a conductive zone which is connected to a conductive zone 14 "of the substrate 1 situated at the bottom of the cavity 12 at the level of the shoulder of the cavity 112.
- FIG. 9A A possible starting structure of the process is illustrated in FIG. 9A in the form of a substrate 1 which can be for example a PCB (Printed Circuit Board).
- the substrate 1 At its lower face 5, the substrate 1 comprises at least one cavity 12 and a hole 13 communicating with the cavity 12, the hole 13 of smaller width than that of the cavity 12 opening at the upper face 3 of the substrate 1
- the starting substrate 1 also comprises one or more conductive zones 14 on its upper face 3 and one or more conductive zones 16 situated on its lower face 5, a conductive zone 14 being typically connected to a conductive zone 16 by the via 17 intermediate.
- FIG. 9B then illustrates a transfer step of an electromechanical component 20 in the cavity 12, the component being provided with a suspended structure such as a membrane 21.
- the transfer is typically carried out using an adhesive 29 so that a region of the front face 23 of the electromechanical component 20 is placed against an area of the substrate 1 forming a step or a shoulder.
- the dimensions of the cavity 12 in a plane parallel to the main plane of the substrate 1 are greater than the dimensions of the electromechanical component 20 in order to accommodate or nest this component 20 in the cavity and make the assembly easier.
- FIG. 9C a connection is made between the electromechanical component 20 and the substrate 1.
- a wire bonding method according to the English terminology may be implemented in order to produce a conducting wire 67 connecting the front face 23 of the electromechanical component 20 and the upper face 3 of the substrate 1 substantially parallel but located at different levels from each other.
- a cover 40 is then transferred to the front face 3 of the substrate 1, as shown in FIG. 9D.
- the cover 40 is disposed on the substrate 1 so as to form a protective enclosure above the electromechanical component 20.
- the assembly of the cover 40 with the substrate 1 is typically carried out using an adhesive 49 which may be conductive, in particular when the cap 40 is metallic.
- one or more conductive balls 19 may be disposed on the lower face 5 of the substrate 1.
- Such conductive balls 19 may be in the form of solder balls to allow a possible transfer of the system to another support such as a electronic application card C (FIG. 9E).
- a microphone as described above has applications in many areas and can be integrated for example with a communication device such as a mobile phone or a computing device such as a tablet. According to other examples, a system according to one or other of the embodiments described above may be integrated in an automobile or a medical device such as a hearing aid.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Micromachines (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
- Pressure Sensors (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1659623A FR3056978B1 (fr) | 2016-10-05 | 2016-10-05 | Capteur de pression, en particulier microphone a agencement ameliore |
| PCT/FR2017/052709 WO2018065717A1 (fr) | 2016-10-05 | 2017-10-03 | Capteur de pression, en particulier microphone a agencement amélioré |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| EP3523986A1 true EP3523986A1 (fr) | 2019-08-14 |
Family
ID=58347457
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP17792115.2A Ceased EP3523986A1 (fr) | 2016-10-05 | 2017-10-03 | Capteur de pression, en particulier microphone a agencement amélioré |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US10822227B2 (fr) |
| EP (1) | EP3523986A1 (fr) |
| CN (1) | CN109845294B (fr) |
| FR (1) | FR3056978B1 (fr) |
| WO (1) | WO2018065717A1 (fr) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT201900022503A1 (it) | 2019-11-29 | 2021-05-29 | St Microelectronics Srl | Sensore ambientale incapsulato |
| DE102020108775B4 (de) * | 2020-03-30 | 2022-08-18 | Infineon Technologies Ag | Sensorpackages und verfahren zur herstellung von sensorpackages |
| EP4007305B1 (fr) * | 2020-11-30 | 2024-12-04 | Sonion Nederland B.V. | Transducteur micro-électromécanique à taille réduite |
| CN117616287A (zh) * | 2021-06-21 | 2024-02-27 | 声扬荷兰有限公司 | 具有压电读出的紧凑型振动传感器 |
| EP4231661A1 (fr) * | 2022-02-22 | 2023-08-23 | Infineon Technologies AG | Dispositif mems ayant une structure de support comprenant une pluralité de régions de faces latérales décalées angulairement |
| DE102022205388A1 (de) * | 2022-05-30 | 2023-11-30 | Robert Bosch Gesellschaft mit beschränkter Haftung | Halbleitervorrichtung mit einem mikromechanischen Bauteil |
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| US20050018864A1 (en) * | 2000-11-28 | 2005-01-27 | Knowles Electronics, Llc | Silicon condenser microphone and manufacturing method |
| US20120212925A1 (en) * | 2011-02-23 | 2012-08-23 | Jochen Zoellin | Component support and assembly having a mems component on such a component support |
| WO2015189598A1 (fr) * | 2014-06-10 | 2015-12-17 | Cirrus Logic International Semiconductor Limited | Mise en boîtier pour transducteurs mems |
| US20160142829A1 (en) * | 2014-11-13 | 2016-05-19 | Invensense, Inc. | Integrated package forming wide sense gap micro electro-mechanical system microphone and methodologies for fabricating the same |
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| JP5174673B2 (ja) * | 2005-10-14 | 2013-04-03 | エスティーマイクロエレクトロニクス エス.アール.エル. | 基板レベル・アセンブリを具えた電子装置及びその製造処理方法 |
| JP4215788B2 (ja) * | 2006-08-25 | 2009-01-28 | ホシデン株式会社 | 圧電型電気音響変換器 |
| KR20080110497A (ko) * | 2007-06-14 | 2008-12-18 | 야마하 가부시키가이샤 | 마이크로폰 패키지, 반도체 장치 및 그 제조 방법 |
| CN101282594B (zh) * | 2008-04-10 | 2013-06-05 | 苏州敏芯微电子技术有限公司 | 具有双面贴装电极的微机电传声器的封装结构 |
| WO2010106733A1 (fr) * | 2009-03-16 | 2010-09-23 | パナソニック株式会社 | Dispositif à semi-conducteur |
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| JP4947191B2 (ja) * | 2010-06-01 | 2012-06-06 | オムロン株式会社 | マイクロフォン |
| KR20150063825A (ko) * | 2013-12-02 | 2015-06-10 | 삼성전기주식회사 | 마이크로폰 패키지 및 마이크로폰 패키지 제조방법 |
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2016
- 2016-10-05 FR FR1659623A patent/FR3056978B1/fr active Active
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- 2017-10-03 US US16/335,740 patent/US10822227B2/en active Active
- 2017-10-03 EP EP17792115.2A patent/EP3523986A1/fr not_active Ceased
- 2017-10-03 WO PCT/FR2017/052709 patent/WO2018065717A1/fr not_active Ceased
- 2017-10-03 CN CN201780061393.9A patent/CN109845294B/zh active Active
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| US20050018864A1 (en) * | 2000-11-28 | 2005-01-27 | Knowles Electronics, Llc | Silicon condenser microphone and manufacturing method |
| US20120212925A1 (en) * | 2011-02-23 | 2012-08-23 | Jochen Zoellin | Component support and assembly having a mems component on such a component support |
| WO2015189598A1 (fr) * | 2014-06-10 | 2015-12-17 | Cirrus Logic International Semiconductor Limited | Mise en boîtier pour transducteurs mems |
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Also Published As
| Publication number | Publication date |
|---|---|
| US10822227B2 (en) | 2020-11-03 |
| CN109845294B (zh) | 2021-04-06 |
| US20190233278A1 (en) | 2019-08-01 |
| WO2018065717A1 (fr) | 2018-04-12 |
| FR3056978A1 (fr) | 2018-04-06 |
| FR3056978B1 (fr) | 2019-08-16 |
| CN109845294A (zh) | 2019-06-04 |
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