EP3505511A4 - Diazadienylverbindung, rohmaterial zur bildung einer dünnschicht, verfahren zur herstellung einer dünnschicht - Google Patents

Diazadienylverbindung, rohmaterial zur bildung einer dünnschicht, verfahren zur herstellung einer dünnschicht Download PDF

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Publication number
EP3505511A4
EP3505511A4 EP17845881.6A EP17845881A EP3505511A4 EP 3505511 A4 EP3505511 A4 EP 3505511A4 EP 17845881 A EP17845881 A EP 17845881A EP 3505511 A4 EP3505511 A4 EP 3505511A4
Authority
EP
European Patent Office
Prior art keywords
thin film
raw material
diazadienyl compound
producing
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP17845881.6A
Other languages
English (en)
French (fr)
Other versions
EP3505511B1 (de
EP3505511A1 (de
Inventor
Tomoharu Yoshino
Masaki ENZU
Akihiro Nishida
Atsushi Yamashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Adeka Corp
Original Assignee
Adeka Corp
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Filing date
Publication date
Application filed by Adeka Corp filed Critical Adeka Corp
Publication of EP3505511A1 publication Critical patent/EP3505511A1/de
Publication of EP3505511A4 publication Critical patent/EP3505511A4/de
Application granted granted Critical
Publication of EP3505511B1 publication Critical patent/EP3505511B1/de
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C251/00—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton
    • C07C251/02—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups
    • C07C251/04—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups having carbon atoms of imino groups bound to hydrogen atoms or to acyclic carbon atoms
    • C07C251/06—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups having carbon atoms of imino groups bound to hydrogen atoms or to acyclic carbon atoms to carbon atoms of a saturated carbon skeleton
    • C07C251/08—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups having carbon atoms of imino groups bound to hydrogen atoms or to acyclic carbon atoms to carbon atoms of a saturated carbon skeleton being acyclic
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F13/00—Compounds containing elements of Groups 7 or 17 of the Periodic Table
    • C07F13/005—Compounds without a metal-carbon linkage
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
    • C07F15/04—Nickel compounds
    • C07F15/045—Nickel compounds without a metal-carbon linkage
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
    • C07F15/04—Nickel compounds

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
EP17845881.6A 2016-08-29 2017-07-05 Diazadienylverbindung, rohmaterial zur bildung einer dünnschicht, verfahren zur herstellung einer dünnschicht Active EP3505511B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016166588A JP2018035072A (ja) 2016-08-29 2016-08-29 ジアザジエニル化合物、薄膜形成用原料及び薄膜の製造方法
PCT/JP2017/024662 WO2018042871A1 (ja) 2016-08-29 2017-07-05 ジアザジエニル化合物、薄膜形成用原料及び薄膜の製造方法

Publications (3)

Publication Number Publication Date
EP3505511A1 EP3505511A1 (de) 2019-07-03
EP3505511A4 true EP3505511A4 (de) 2020-04-01
EP3505511B1 EP3505511B1 (de) 2021-05-26

Family

ID=61309431

Family Applications (1)

Application Number Title Priority Date Filing Date
EP17845881.6A Active EP3505511B1 (de) 2016-08-29 2017-07-05 Diazadienylverbindung, rohmaterial zur bildung einer dünnschicht, verfahren zur herstellung einer dünnschicht

Country Status (7)

Country Link
US (1) US10920313B2 (de)
EP (1) EP3505511B1 (de)
JP (1) JP2018035072A (de)
KR (1) KR20190042648A (de)
CN (1) CN109715601B (de)
TW (1) TW201815809A (de)
WO (1) WO2018042871A1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202010746A (zh) * 2018-06-30 2020-03-16 美商應用材料股份有限公司 含錫之前驅物及沉積含錫薄膜之方法
KR20220083724A (ko) 2019-10-17 2022-06-20 가부시키가이샤 아데카 신규 주석 화합물, 그 화합물을 함유하는 박막 형성용 원료, 그 박막 형성용 원료를 사용하여 형성되는 박막, 그 박막을 제조하기 위해서 그 화합물을 프리커서로서 사용하는 방법, 및 그 박막의 제조 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130251903A1 (en) * 2010-11-17 2013-09-26 Up Chemical Co., Ltd. Diazadiene-based metal compound, method for preparing same and method for forming a thin film using same
EP3266763A1 (de) * 2015-03-06 2018-01-10 Adeka Corporation Diazadienylverbindung, rohmaterial zur formung einer dünnschicht, verfahren zur herstellung einer dünnschicht und diazadienverbindung

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7439338B2 (en) * 2005-06-28 2008-10-21 Micron Technology, Inc. Beta-diketiminate ligand sources and metal-containing compounds thereof, and systems and methods including same
WO2012027357A2 (en) * 2010-08-24 2012-03-01 Wayne State University Thermally stable volatile precursors
TWI577824B (zh) * 2013-06-06 2017-04-11 應用材料股份有限公司 使用二氮丁二烯基前驅物沉積含錳膜之方法
US9067958B2 (en) * 2013-10-14 2015-06-30 Intel Corporation Scalable and high yield synthesis of transition metal bis-diazabutadienes
US9236292B2 (en) * 2013-12-18 2016-01-12 Intel Corporation Selective area deposition of metal films by atomic layer deposition (ALD) and chemical vapor deposition (CVD)
JP2016166588A (ja) 2015-03-10 2016-09-15 パイオニア株式会社 移動体情報取得装置、サーバ装置、移動体情報取得方法、移動体情報取得プログラムおよび記録媒体

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130251903A1 (en) * 2010-11-17 2013-09-26 Up Chemical Co., Ltd. Diazadiene-based metal compound, method for preparing same and method for forming a thin film using same
EP3266763A1 (de) * 2015-03-06 2018-01-10 Adeka Corporation Diazadienylverbindung, rohmaterial zur formung einer dünnschicht, verfahren zur herstellung einer dünnschicht und diazadienverbindung

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
MICHAEL SVOBODA ET AL: "Bis(diazadien)metal(0) complexes. III. Nickel(0) bis(chelates) with aliphatic N-substituents, Zeitschrift fuer Naturforschung, Teil B: Anorganische Chemie", ZEITSCHRIFT FUR NATURFORSCHUNG - SECTION B JOURNAL OF CHEMICAL SCIENCES, vol. 36, no. 7, 1 July 1981 (1981-07-01), DE, pages 814 - 822, XP055582301, ISSN: 0932-0776, DOI: 10.1515/znb-1981-0708 *
NICOLETA MURESAN ET AL: "Bis([alpha]-diimine)nickel Complexes: Molecular and Electronic Structure of Three Members of the Electron-Transfer Series [Ni(L) 2 ] z ( z = 0, 1+, 2+) (L = 2-Phenyl-1,4-bis(isopropyl)-1,4-diazabutadiene). A Combined Experimental and Theoretical Study", INORGANIC CHEMISTRY, vol. 46, no. 13, 1 June 2007 (2007-06-01), pages 5327 - 5337, XP055160423, ISSN: 0020-1669, DOI: 10.1021/ic700407m *
See also references of WO2018042871A1 *

Also Published As

Publication number Publication date
US20190185994A1 (en) 2019-06-20
TW201815809A (zh) 2018-05-01
EP3505511B1 (de) 2021-05-26
US10920313B2 (en) 2021-02-16
CN109715601A (zh) 2019-05-03
JP2018035072A (ja) 2018-03-08
KR20190042648A (ko) 2019-04-24
CN109715601B (zh) 2022-02-25
WO2018042871A1 (ja) 2018-03-08
EP3505511A1 (de) 2019-07-03

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