EP3498880B1 - Maskenplatte und verdampfungsvorrichtung - Google Patents

Maskenplatte und verdampfungsvorrichtung Download PDF

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Publication number
EP3498880B1
EP3498880B1 EP17767720.0A EP17767720A EP3498880B1 EP 3498880 B1 EP3498880 B1 EP 3498880B1 EP 17767720 A EP17767720 A EP 17767720A EP 3498880 B1 EP3498880 B1 EP 3498880B1
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EP
European Patent Office
Prior art keywords
mask
frame
plane
strip
mask strip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
EP17767720.0A
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English (en)
French (fr)
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EP3498880A1 (de
EP3498880A4 (de
Inventor
Peng Xu
Yongkang Qiao
Shengkai Pan
Jie Liu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOE Technology Group Co Ltd, Hefei Xinsheng Optoelectronics Technology Co Ltd filed Critical BOE Technology Group Co Ltd
Publication of EP3498880A1 publication Critical patent/EP3498880A1/de
Publication of EP3498880A4 publication Critical patent/EP3498880A4/de
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation

Definitions

  • the present invention relates to a mask and an evaporation device.
  • Evaporation process is widely applied in the coating process for electronic devices.
  • the principle of the evaporation process is to place a substrate for evaporation in a vacuum environment and deposit an evaporation material(s) on a surface of the substrate for evaporation for forming of film. Film formation areas of the substrate for evaporation are usually defined by mask strips.
  • the edge of the substrate is scratched, the problems such as breakage of a peripheral circuit and package failure can be easily caused, so the yield and the service life of products can be disadvantageously affected.
  • the scratching of the edge of the substrate is usually caused by the relative motion between the mask strips and the glass substrate during contact.
  • the sharpness and the roughness of edges of the mask strips are effectively controlled; and on the other hand, the relative motion between the mask strips and the glass substrate is slowed down, and the mutual acting force of the mask strips and the glass substrate is weakened.
  • the thickness of the mask strips is generally 100 ⁇ m or less, so the edges of the mask strips will be inevitably sharp.
  • the mask strips are manufactured by an etching process, and it is greatly difficult to control the sharpness and the roughness of the edges of the mask strips by adjusting the parameters of the etching process.
  • US 2010/224125 A1 discloses a deposition mask including a mask sheet and a frame to support the perimeter of the mask sheet.
  • the frame includes a contact surface that is attached to the mask sheet, and a non-contact surface that faces and is spaced apart from the mask sheet, the non-contact portion extends from the contact portion, to an opening formed in the center of the frame.
  • the non-contact portion may form an acute angle, with respect to the plane of the mask sheet.
  • JP 2010 135269 A discloses a mask for vapor deposition.
  • a step height part is arranged along an opening on a surface opposed to a mask body in a frame body.
  • a clearance is formed between the frame body and the mask body by this step height part.
  • a clearance holding part of the same height as the step height part is dotted in the clearance.
  • connection is not intended to define a physical connection or mechanical connection, but may include an electrical connection, directly or indirectly.
  • "On,” “under,” “right,” “left” and the like are only used to indicate relative position relationship, and when the position of the object which is described is changed, the relative position relationship may be changed accordingly.
  • FIG. 1 is a schematic structural plan view of a mask.
  • the mask 100 comprises a frame 101 and mask strips 102 fixed on the frame 101.
  • the mask 100 comprises six mask strips 102, four mask strips of which are fixed at the periphery of the frame 101 and make direct contact with the frame; orthographic projections of the four mask strips on a plane in which the frame is provided are overlapped with the frame; and the rest two mask strips are lapped over the frame 101.
  • the inventors have noted in research that: the four mask strips fixed at the periphery of the frame 101 are key reasons in causing the scratching of the substrate; and as the main bodies of the peripheral mask strips make direct contact with the frame 101, when the peripheral mask strips are attracted by the magnetic force of magnets, the tilting motion of the mask strips is limited, so the probability that the mask strips move upwards and scratch the glass substrate is increased, namely the degree of freedom of the mask strips is limited, so the mutual acting force between the mask strips and the glass substrate is increased, and hence the glass substrate can be scratched. From the aspect of increasing the degree of freedom of the mask strips, the problem of the scratching of the edge of the substrate can be solved by slowing down the relative motion between the mask strips and the glass substrate.
  • the structure of the frame is modified and designed have two planes with different heights so as to form a step(s); and first mask strips are lapped over an outer frame of the frame, so the main bodies of the first mask strips will not make contact with the frame.
  • the present disclosure avoids the problem that the glass substrate is scratched by the first mask strips, and effectively improves the yield and the service life of subsequent products.
  • At least one embodiment of the present disclosure provides a mask, which comprises a frame and a first mask strip disposed inside the frame.
  • the frame includes an outer frame that is disposed on the outer side and includes a first plane and an inner frame that is disposed on the inner side and includes a second plane; the first plane is higher than the second plane so as to form a step; the first mask strip is fixed on the outer frame through two ends and is extended inside the outer frame along one side of the frame; and an orthographic projection of the first mask strip on the second plane is at least partially overlapped with the inner frame on one side.
  • FIG. 2 is a schematic structural plan view of the mask provided by the embodiment of the present disclosure.
  • FIGS. 2a and 2b are schematic structural sectional views of the mask as illustrated in FIG. 2 .
  • the mask 100 comprises a frame 101 and first mask strips 1021 disposed inside the frame 101.
  • the frame 101 includes an outer frame 1011 and an inner frame 1012; the outer frame 1011 is disposed on the outer side and includes a first plane 103; the inner frame 1012 is disposed on the inner side and includes a second plane 104; the first plane 103 is higher than the second plane 104, relative to a bottom surface of the frame 101, so as to form a step 105; each first mask strip 1021 is fixed on the outer frame 1011 through two ends and is extended inside the outer frame 1011 along one side of the frame 101; and an orthographic projection of the first mask strip 1021 on the second plane 104 is partially overlapped with the inner frame 1012 on sides.
  • first mask strips 1021 are arranged in the longitudinal direction and respectively disposed on the left side and the right side of the frame 101; and the first mask strips 1021 are respectively fixed on the outer frame 1011 through two end portions and respectively fixed inside the outer frame on the left side and the right side of the frame 101 (namely the main body except the end portions is disposed inside the outer frame), so the orthographic projection of the first mask strip 1021 on the second plane 104 is not overlapped with the outer frame 1011.
  • the fixing means of the end portions of the first mask strip 1021 may include welding, riveting, etc.
  • the inner frame 1012 and the outer frame 1011 are integrally formed; after a frame body is formed, the side of the outer frame closer to the area defined by the frame is etched to a certain thickness, so as to form the step 105 formed by the first plane 103 and the second plane 104, and the first plane 103 is higher than the second plane 104,
  • the frame 101 may be formed in one piece by stamping.
  • the inner frame 1012 and the outer frame 1011 are respectively formed and then connected with each other (e.g., by welding) to form a whole body including the first plane 103 and the second plane 104, and the first plane 103 is higher than the second plane 104, so as to form the step 105.
  • the sectional view along A-A1 in FIG. 2 is also different. It should be noted that the section line A-A1 is a center line of the first mask strip 1021.
  • the height difference h between the first plane 103 and the second plane 104 is 1 mm - 10 mm.
  • the height difference h between the first plane 103 and the second plane 104 is 5 mm.
  • the degree of freedom of the first mask strip is not limited.
  • the distance L between the main body of the first mask strip 1021 and the outer frame 1011 is 0.5 mm - 2 mm.
  • L is 1 mm.
  • the first mask strip 1021 is fixed on the outer frame by means of welding.
  • the welding includes spot welding, etc.
  • the mask 100 may further comprise second mask strips 1022 disposed on the inner side of the frame 101.
  • the second mask strips 1022 are fixed on the outer frame 1011 and extended inside the outer frame 1011 along the other side of the frame 101.
  • an orthographic projection of each second mask strip 1022 on the second plane 104 is at least partially overlapped with the inner frame 1012 on the other side.
  • the partial overlap here includes the overlap of orthographic projections of end portions of the second mask strip 1022 on the second plane 104 and the inner frame 1012 on the other side, and the overlap of an orthographic projection of a main body of the second mask strip 1022 on the second plane 104 and the inner frame 1012 on the other side.
  • two second mask strips are transversely arranged on the upper side and the lower side of the frame 101 respectively.
  • the second mask strips 1022 are respectively fixed on the outer frame 1011 through two end portions, and respectively disposed inside the outer frame on the upper side and the lower side of the frame 101 (namely a main body except the end portions is disposed inside the outer frame), so there is no overlapped area between the orthographic projection of the second mask strip 1022 on the second plane 104 and the outer frame 1011.
  • the fixing means of the end portions of the second mask strip 1022 may include welding, riveting, etc.
  • second mask strips 1022 are also included and disposed in the middle of the frame 101.
  • These second mask strips 1022 are fixed on the outer frame 1011 through two end portions and intersected with the middle of the first mask strips 1021, so as to divide the area encircled by the frame into a plurality of sub-areas.
  • the size of the sub-areas formed here may be same or different.
  • a plurality of first mask strips 1021 may also be fixed on the outer frame so as to divide an area encircled by the frame 101 into more sub-areas.
  • the thickness at the overlapped area is the sum of the thickness of the second mask strip 1022 and the first mask strip 1021, namely the second mask strip 1022 and the first mask strip 1021 make contact with each other.
  • the first mask strip 1021 and the second mask strip 1022 have an equal thickness, and are respectively etched by a half of the thickness at the intersected area.
  • the thickness at the intersected area is the thickness of one mask strip.
  • both the thicknesses of the first mask strip 1021 and the thickness of the second mask strip 1022 are 50 ⁇ m - 100 ⁇ m, e.g., 50 ⁇ m, 75 ⁇ m or 100 ⁇ m.
  • first mask strips 1021 and the second mask strips 1022 as illustrated in FIGS. 2 and 3 are only illustrative and obviously not limited to the case as illustrated in FIG. 2 .
  • a plurality of mask strips 1021 or a plurality of second mask strips 1022 may also be disposed in the area defined by the frame as required so as to form required film forming areas.
  • other first mask strip(s) 1021 may also be disposed at the middle part of the frame in the transverse direction.
  • FIG. 4 is a schematic structural plan view of the frame in the embodiment of the present disclosure.
  • FIGS. 4a-4d are schematic structural sectional views of the frame as illustrated in FIG. 4 .
  • an orthographic projection of the inner frame on the first plane is in butt joint with one side of the outer frame; or as illustrated in FIGS. 4b and 4c , the orthographic projection of the inner frame on the first frame is at least partially overlapped with one side of the outer frame; or as illustrated in FIG 4d , one surface of the inner frame, opposite to the second plane, is set to be in the shape of an inclined slope, so as to provide convenience for the uniform coating of an evaporation material(s) at edge areas during evaporation.
  • An embodiment of the present disclosure further provides an evaporation device, which comprises the mask provided by the first embodiment.
  • FIG. 5a is a schematic structural plan view of the mask
  • FIG. 5b is a schematic structural sectional view when the mask as illustrated in FIG. 5 is applied to the evaporation device.
  • the section of the mask in FIG. 5b is cut along D-Dl line in FIG. 5a .
  • the evaporation device further comprises a magnet 201 arranged opposite to the mask.
  • the magnet and the mask 100 are respectively disposed on both sides of a glass substrate 202 to be evaporated.
  • the first mask strips 1021 are made from magnetic materials, e.g., iron (Fe), nickel (Ni) or Fe-Ni alloy materials. The first mask strips are closely attached to the glass substrate for evaporation under the action of the magnetic force of the magnet 201 on the first mask strips.
  • the second mask strips also have magnetic property;
  • the second mask strip is fixed on the outer frame through two ends; a plurality of second mask strips may also be arranged; the second mask strips may be intersected with the middle parts of the first mask strips so as to divide the area encircled by the frame into a plurality of sub-areas; and the first mask strips and the second mask strips are closely attached to the glass substrate for evaporation under the action of the magnetic force of the magnet on the first mask strips and the second mask strips, so as to form a plurality of film forming areas.
  • the mask and the evaporation device have the following advantages: the structure of the frame is modified and designed into having two planes with different heights, so as to form a step; subsequently, the first mask strips are lapped over the frame; and two ends of each first mask strip are fixed on the outer frame, but the main body does not make contact with the frame so as to avoid the problem that the glass substrate is scratched by the first mask strips and effectively improve the yield and the service life of subsequent products.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)

Claims (12)

  1. Maske (100), mit einem Rahmen (101) und einem ersten Maskenstreifen (1021), der innerhalb des Rahmens (101) angeordnet ist, wobei
    der Rahmen (101) einen äußeren Rahmen (1011) und einen inneren Rahmen (1012) aufweist; der äußere Rahmen (1011) an einer Außenseite angeordnet ist und eine erste Ebene (103) aufweist; der innere Rahmen (1012) an einer Innenseite angeordnet ist und eine zweite Ebene (104) aufweist; die erste Ebene (103) höher als die zweite Ebene (104) ist, sodass eine Stufe (105) gebildet wird;
    der erste Maskenstreifen (1021) zwei Enden und einen Hauptkörper zwischen den beiden Enden aufweist, der erste Maskenstreifen (1021) durch die beiden Enden an dem äußeren Rahmen (1011) befestigt ist und der Hauptkörper sich entlang einer ersten Seite des äußeren Rahmens (1011) sowie einer ersten Seite des inneren Rahmens (1012) erstreckt; und
    der Hauptkörper des ersten Maskenstreifens (1021) von der ersten Seite des äußeren Rahmens (1011) beabstandet ist, der erste Maskenstreifen (1021) von dem inneren Rahmen (1012) beabstandet ist und eine orthographische Projektion des ersten Maskenstreifens (1021) auf die zweite Ebene (104) in einer Richtung senkrecht zu der zweiten Ebene (104) teilweise mit der ersten Seite des inneren Rahmens (1012) überlappt.
  2. Maske (100) nach Anspruch 1, wobei ein Höhenunterschied zwischen der ersten Ebene (103) und der zweiten Ebene (104) 1 mm - 10 mm beträgt.
  3. Maske (100) nach Anspruch 2, wobei der Höhenunterschied zwischen der ersten Ebene (103) und der zweiten Ebene (104) 5 mm beträgt.
  4. Maske (100) nach Anspruch 1, wobei auf der ersten Ebene (103) und in einer Richtung senkrecht zu einer Ausdehnungsrichtung des ersten Maskenstreifens (1021) der Abstand zwischen einem Hauptkörper des ersten Maskenstreifens (1021) und dem äußeren Rahmen (1011) 0,5 mm - 2 mm beträgt.
  5. Maske (100) nach einem der Ansprüche 1 bis 4, ferner mit einem zweiten Maskenstreifen (1022), der innerhalb des Rahmens (101) angeordnet ist.
  6. Maske (100) nach Anspruch 5, wobei der zweite Maskenstreifen (1022) an zwei Enden am äußeren Rahmen (1011) befestigt ist und sich innerhalb des äußeren Rahmens (1011) entlang einer anderen Seite des Rahmens (101) erstreckt; und eine orthografische Projektion des zweiten Maskenstreifens (1022) auf die zweite Ebene (104) zumindest teilweise mit dem inneren Rahmen (1012) auf der anderen Seite überlappt.
  7. Maske (100) nach Anspruch 5, wobei es einen Überlappungsbereich zwischen dem zweiten Maskenstreifen (1022) und dem ersten Maskenstreifen (1021) gibt.
  8. Maske (100) nach Anspruch 7, wobei der zweite Maskenstreifen (1022) mit zwei Enden an dem äußeren Rahmen (1011) befestigt ist und der zweite Maskenstreifen (1022) sich mit einem mittleren Teil des ersten Maskenstreifens (1021) schneidet, sodass ein von dem Rahmen (101) umschlossener Bereich in eine Vielzahl von Teilbereichen unterteilt wird.
  9. Maske (100) nach Anspruch 7 oder 8, wobei der erste Maskenstreifen (1021) und der zweite Maskenstreifen (1022) die gleiche Dicke haben.
  10. Maske (100) nach einem der Ansprüche 6 bis 8, wobei sowohl die Dicke des ersten Maskenstreifens (1021) als auch die Dicke des zweiten Maskenstreifens (1022) 50 µm - 100 µm beträgt.
  11. Aufdampfvorrichtung, welche die Maske (100) nach einem der Ansprüche 1 bis 10 aufweist.
  12. Aufdampfvorrichtung nach Anspruch 11, ferner mit einem Magneten (201), der gegenüber der Maske (100) angeordnet ist,
    wobei der erste Maskenstreifen (1021) eine magnetische Eigenschaft aufweist und in der Lage ist, von dem Magneten (201) angezogen zu werden, um sich zu bewegen.
EP17767720.0A 2016-08-08 2017-03-01 Maskenplatte und verdampfungsvorrichtung Active EP3498880B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201620851904.XU CN205856592U (zh) 2016-08-08 2016-08-08 掩膜板和蒸镀装置
PCT/CN2017/075341 WO2018028183A1 (zh) 2016-08-08 2017-03-01 掩膜板和蒸镀装置

Publications (3)

Publication Number Publication Date
EP3498880A1 EP3498880A1 (de) 2019-06-19
EP3498880A4 EP3498880A4 (de) 2020-04-08
EP3498880B1 true EP3498880B1 (de) 2023-05-10

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EP17767720.0A Active EP3498880B1 (de) 2016-08-08 2017-03-01 Maskenplatte und verdampfungsvorrichtung

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US (1) US10465277B2 (de)
EP (1) EP3498880B1 (de)
CN (1) CN205856592U (de)
WO (1) WO2018028183A1 (de)

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CN205856592U (zh) 2016-08-08 2017-01-04 合肥鑫晟光电科技有限公司 掩膜板和蒸镀装置
JP6919145B2 (ja) * 2017-08-09 2021-08-18 株式会社飯沼ゲージ製作所 マスク製造装置及びマスク製造方法
CN108004503B (zh) * 2017-12-15 2021-01-19 京东方科技集团股份有限公司 掩模板、蒸镀设备和装置
CN110184582B (zh) * 2018-02-23 2021-09-14 京东方科技集团股份有限公司 掩膜版及其制作方法和显示装置
CN108998773B (zh) * 2018-07-27 2023-08-18 京东方科技集团股份有限公司 掩模板及其制作方法、封装设备
CN109599477B (zh) * 2018-11-28 2020-06-02 武汉华星光电技术有限公司 网孔的制作方法
JP7406719B2 (ja) * 2019-01-29 2023-12-28 大日本印刷株式会社 蒸着マスク及びその製造方法、蒸着マスク装置及びその製造方法、中間体、蒸着方法、並びに有機ｅｌ表示装置の製造方法
CN111074204B (zh) * 2020-01-03 2022-01-14 京东方科技集团股份有限公司 掩膜板及其制作方法
CN112176282B (zh) * 2020-08-27 2023-02-10 合肥维信诺科技有限公司 掩膜版及蒸镀装置

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CN205856592U (zh) * 2016-08-08 2017-01-04 合肥鑫晟光电科技有限公司 掩膜板和蒸镀装置

Also Published As

Publication number Publication date
EP3498880A1 (de) 2019-06-19
US10465277B2 (en) 2019-11-05
EP3498880A4 (de) 2020-04-08
US20180245198A1 (en) 2018-08-30
CN205856592U (zh) 2017-01-04
WO2018028183A1 (zh) 2018-02-15

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