EP3458902A2 - Procédé de fabrication d'éléments de sécurité comprenant un rabat lenticulaire - Google Patents

Procédé de fabrication d'éléments de sécurité comprenant un rabat lenticulaire

Info

Publication number
EP3458902A2
EP3458902A2 EP17723054.7A EP17723054A EP3458902A2 EP 3458902 A2 EP3458902 A2 EP 3458902A2 EP 17723054 A EP17723054 A EP 17723054A EP 3458902 A2 EP3458902 A2 EP 3458902A2
Authority
EP
European Patent Office
Prior art keywords
layer
image
photoresist
micro
optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP17723054.7A
Other languages
German (de)
English (en)
Inventor
Andreas Schilling
René Staub
Philipp Schuler
Achim Hansen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
OVD Kinegram AG
Original Assignee
OVD Kinegram AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by OVD Kinegram AG filed Critical OVD Kinegram AG
Publication of EP3458902A2 publication Critical patent/EP3458902A2/fr
Withdrawn legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B42—BOOKBINDING; ALBUMS; FILES; SPECIAL PRINTED MATTER
    • B42D—BOOKS; BOOK COVERS; LOOSE LEAVES; PRINTED MATTER CHARACTERISED BY IDENTIFICATION OR SECURITY FEATURES; PRINTED MATTER OF SPECIAL FORMAT OR STYLE NOT OTHERWISE PROVIDED FOR; DEVICES FOR USE THEREWITH AND NOT OTHERWISE PROVIDED FOR; MOVABLE-STRIP WRITING OR READING APPARATUS
    • B42D25/00—Information-bearing cards or sheet-like structures characterised by identification or security features; Manufacture thereof
    • B42D25/40—Manufacture
    • B42D25/405—Marking
    • B42D25/43—Marking by removal of material
    • B42D25/445—Marking by removal of material using chemical means, e.g. etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B42—BOOKBINDING; ALBUMS; FILES; SPECIAL PRINTED MATTER
    • B42D—BOOKS; BOOK COVERS; LOOSE LEAVES; PRINTED MATTER CHARACTERISED BY IDENTIFICATION OR SECURITY FEATURES; PRINTED MATTER OF SPECIAL FORMAT OR STYLE NOT OTHERWISE PROVIDED FOR; DEVICES FOR USE THEREWITH AND NOT OTHERWISE PROVIDED FOR; MOVABLE-STRIP WRITING OR READING APPARATUS
    • B42D25/00—Information-bearing cards or sheet-like structures characterised by identification or security features; Manufacture thereof
    • B42D25/30—Identification or security features, e.g. for preventing forgery
    • B42D25/324—Reliefs
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B42—BOOKBINDING; ALBUMS; FILES; SPECIAL PRINTED MATTER
    • B42D—BOOKS; BOOK COVERS; LOOSE LEAVES; PRINTED MATTER CHARACTERISED BY IDENTIFICATION OR SECURITY FEATURES; PRINTED MATTER OF SPECIAL FORMAT OR STYLE NOT OTHERWISE PROVIDED FOR; DEVICES FOR USE THEREWITH AND NOT OTHERWISE PROVIDED FOR; MOVABLE-STRIP WRITING OR READING APPARATUS
    • B42D25/00—Information-bearing cards or sheet-like structures characterised by identification or security features; Manufacture thereof
    • B42D25/30—Identification or security features, e.g. for preventing forgery
    • B42D25/328—Diffraction gratings; Holograms
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B42—BOOKBINDING; ALBUMS; FILES; SPECIAL PRINTED MATTER
    • B42D—BOOKS; BOOK COVERS; LOOSE LEAVES; PRINTED MATTER CHARACTERISED BY IDENTIFICATION OR SECURITY FEATURES; PRINTED MATTER OF SPECIAL FORMAT OR STYLE NOT OTHERWISE PROVIDED FOR; DEVICES FOR USE THEREWITH AND NOT OTHERWISE PROVIDED FOR; MOVABLE-STRIP WRITING OR READING APPARATUS
    • B42D25/00—Information-bearing cards or sheet-like structures characterised by identification or security features; Manufacture thereof
    • B42D25/30—Identification or security features, e.g. for preventing forgery
    • B42D25/351—Translucent or partly translucent parts, e.g. windows
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B42—BOOKBINDING; ALBUMS; FILES; SPECIAL PRINTED MATTER
    • B42D—BOOKS; BOOK COVERS; LOOSE LEAVES; PRINTED MATTER CHARACTERISED BY IDENTIFICATION OR SECURITY FEATURES; PRINTED MATTER OF SPECIAL FORMAT OR STYLE NOT OTHERWISE PROVIDED FOR; DEVICES FOR USE THEREWITH AND NOT OTHERWISE PROVIDED FOR; MOVABLE-STRIP WRITING OR READING APPARATUS
    • B42D25/00—Information-bearing cards or sheet-like structures characterised by identification or security features; Manufacture thereof
    • B42D25/30—Identification or security features, e.g. for preventing forgery
    • B42D25/36—Identification or security features, e.g. for preventing forgery comprising special materials
    • B42D25/373—Metallic materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B42—BOOKBINDING; ALBUMS; FILES; SPECIAL PRINTED MATTER
    • B42D—BOOKS; BOOK COVERS; LOOSE LEAVES; PRINTED MATTER CHARACTERISED BY IDENTIFICATION OR SECURITY FEATURES; PRINTED MATTER OF SPECIAL FORMAT OR STYLE NOT OTHERWISE PROVIDED FOR; DEVICES FOR USE THEREWITH AND NOT OTHERWISE PROVIDED FOR; MOVABLE-STRIP WRITING OR READING APPARATUS
    • B42D25/00—Information-bearing cards or sheet-like structures characterised by identification or security features; Manufacture thereof
    • B42D25/40—Manufacture
    • B42D25/405—Marking
    • B42D25/41—Marking using electromagnetic radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B42—BOOKBINDING; ALBUMS; FILES; SPECIAL PRINTED MATTER
    • B42D—BOOKS; BOOK COVERS; LOOSE LEAVES; PRINTED MATTER CHARACTERISED BY IDENTIFICATION OR SECURITY FEATURES; PRINTED MATTER OF SPECIAL FORMAT OR STYLE NOT OTHERWISE PROVIDED FOR; DEVICES FOR USE THEREWITH AND NOT OTHERWISE PROVIDED FOR; MOVABLE-STRIP WRITING OR READING APPARATUS
    • B42D25/00—Information-bearing cards or sheet-like structures characterised by identification or security features; Manufacture thereof
    • B42D25/40—Manufacture
    • B42D25/405—Marking
    • B42D25/415—Marking using chemicals
    • B42D25/42—Marking using chemicals by photographic processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B42—BOOKBINDING; ALBUMS; FILES; SPECIAL PRINTED MATTER
    • B42D—BOOKS; BOOK COVERS; LOOSE LEAVES; PRINTED MATTER CHARACTERISED BY IDENTIFICATION OR SECURITY FEATURES; PRINTED MATTER OF SPECIAL FORMAT OR STYLE NOT OTHERWISE PROVIDED FOR; DEVICES FOR USE THEREWITH AND NOT OTHERWISE PROVIDED FOR; MOVABLE-STRIP WRITING OR READING APPARATUS
    • B42D25/00—Information-bearing cards or sheet-like structures characterised by identification or security features; Manufacture thereof
    • B42D25/40—Manufacture
    • B42D25/45—Associating two or more layers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0037—Arrays characterized by the distribution or form of lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0037—Arrays characterized by the distribution or form of lenses
    • G02B3/0043—Inhomogeneous or irregular arrays, e.g. varying shape, size, height
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B30/00—Optical systems or apparatus for producing three-dimensional [3D] effects, e.g. stereoscopic images
    • G02B30/20—Optical systems or apparatus for producing three-dimensional [3D] effects, e.g. stereoscopic images by providing first and second parallax images to an observer's left and right eyes
    • G02B30/26—Optical systems or apparatus for producing three-dimensional [3D] effects, e.g. stereoscopic images by providing first and second parallax images to an observer's left and right eyes of the autostereoscopic type
    • G02B30/27—Optical systems or apparatus for producing three-dimensional [3D] effects, e.g. stereoscopic images by providing first and second parallax images to an observer's left and right eyes of the autostereoscopic type involving lenticular arrays
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B25/00—Viewers, other than projection viewers, giving motion-picture effects by persistence of vision, e.g. zoetrope
    • G03B25/02—Viewers, other than projection viewers, giving motion-picture effects by persistence of vision, e.g. zoetrope with interposed lenticular or line screen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B35/00—Stereoscopic photography
    • G03B35/18—Stereoscopic photography by simultaneous viewing
    • G03B35/24—Stereoscopic photography by simultaneous viewing using apertured or refractive resolving means on screens or between screen and eye
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/02—Simple or compound lenses with non-spherical faces
    • G02B3/06—Simple or compound lenses with non-spherical faces with cylindrical or toric faces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means

Definitions

  • the invention relates to a method according to the preamble of claim 1 for the production of security elements with a lenticular flip.
  • an optical element for reproducing images is called by tilting about one or more tilt axes
  • the object of the present invention is to provide an improved method for producing a security element. According to the invention, this object is achieved with the subject matter of claim 1.
  • micro-optical layer is projected, or
  • step b) wherein the photoresist is applied in step b) in the form of an n-th master image on the underside of the carrier substrate, and wherein the photoresist through the micro-optical layer with below an n-th
  • the proposed method has the advantage that by the optical transmission of the i master images on the photoresist a variety of
  • Design variants can be formed, wherein the photoresist in terms of its type (positive or negative), its color, its sensitivity and its
  • Another advantage is that with the proposed method, a very large variety of variants can be formed, with relatively few process steps are required.
  • the layer structure produced forms a "self-referencing system" which is very tolerant to distortions, dilations and errors of the micro-optical systems.
  • a micro-optical system is understood in particular to mean an imaging optical system in which at least one dimension lies below the resolution capability of an unarmed human eye. The resolution is dependent on the respective viewing distance.
  • a typical example would be for security applications
  • the dimension is less than about 300 ⁇ .
  • the exposure takes place in an angle of incidence range with nearly parallel rays. It can also be a larger angle of incidence range. This leads to the fact that the corresponding partial image is recognizable within a larger viewing angle range.
  • angle of incidence and viewing angle should each also include a corresponding area around an exact angle
  • ⁇ 10 ° around the respective angle of incidence or Viewing angle.
  • the position of the observer can vary accordingly within the viewing angle range.
  • the proposed method is further characterized by the fact that no insets are necessary, i. the image layer does not have to be inserted and / or applied in a positionally exact manner to the micro-optical system.
  • the security element produced by the method has good intercoat adhesion especially due to its simple structure with few required layers. It is therefore easy with others
  • Security elements can be integrated in foils.
  • the process is also characterized by high productivity.
  • the angles of incidence and the incident azimuth describe the spatial
  • Projection beam The angle of incidence is the vertical angle of the
  • Projection beam relative to the normal to the micro-optical layer.
  • the incident azimuth is the horizontal angle formed by projecting the projection beam onto the x-y plane.
  • the micro-optical layer is formed, as described below, be formed as a carrier film.
  • the microoptical layer may also be a film, which is designed, for example, as a self-supporting film.
  • the micro-optical layer can under the influence of pressure and temperature and possibly after application of
  • the Microoptical layer may also be formed as a transfer layer of a transfer film, which is withdrawn during or after the application of the micro-optical layer on the carrier film.
  • the carrier film may also temporarily serve as a protective film for the micro-optical systems, for example, damage to the micro-optical systems in subsequent
  • the carrier film may also have an optical function. Examples would be carrier films of high refractive index
  • Wavelength ranges of absorbing properties Wavelength ranges of absorbing properties.
  • the method steps a) and b) can also be carried out in a changed order or simultaneously.
  • the side opposite the micro-optical layer is coated with the photoresist.
  • the coating can take place over the entire surface or over part of the area.
  • the photoresist may be applied in the form of a pattern or in the form of one or more motifs. Methods are coating, especially printing from solution
  • solvent-containing, aqueous systems solvent-containing, aqueous systems
  • Solvent-free liquid, semi-liquid
  • dry resists by rolling, sticking, laminating or by transfer of a transfer layer from a carrier by hot stamping or cold stamping.
  • the wavelength of the light used in method step c) can be in the UV range or in the UV range in accordance with the preferred use of a UV-sensitive photoresist.
  • Photoresists for the visual wavelength range are also available, for example in the
  • Spectral range of the spectral colors blue to green These photoresists also have the advantage that no UV radiation is needed.
  • the photoresist may be on different substrates during the exposure process, for example, they may be dark (black, gray) or bright (white) or transparent or translucent and / or metallic. They can be scattering or non-scattering. An exposure without a base is also possible.
  • step c) Since the method step c) is repeated (i-1) times until the formation of the ith sub-image, it is possible to form two or more sub-images in the image layer that are at different tilt angles of the security element or from different viewing directions, ie different
  • the image layer may be formed with array subimages that create the illusion of movement as the security element is tilted.
  • array subimages that create the illusion of movement as the security element is tilted.
  • Method step e) may include an additional exposure, optionally also at a different wavelength than in method step c), in order to further harden the image layer.
  • Post-curing can also be achieved by means of electron beam radiation (so-called e-beam) and / or via a chemical crosslinker,
  • step e) takes place before step d).
  • the photoresist is applied in step b) in the form of an n-th master image on the underside of the carrier substrate and if the photoresist through the micro-optical layer with It is possible to develop the respective photoresist after each step of application, under an n-th angle of incidence and an n-th incidence azimuth. Alternatively, all applied photoresist layers can be developed together.
  • the carrier substrate may be formed in preferred embodiments as a carrier film, wherein the carrier film of a plurality of layers or
  • the carrier film can be a film made of a thermoplastic, for example polyethylene (PE), polypropylene, polycarbonate or polyester (PET, PETG) with a thickness of about 20 ⁇ m. It can also be a composite of different thermoplastics, for example polyethylene (PE), polypropylene, polycarbonate or polyester (PET, PETG) with a thickness of about 20 ⁇ m. It can also be a composite of different thermoplastics, for example polyethylene (PE), polypropylene, polycarbonate or polyester (PET, PETG) with a thickness of about 20 ⁇ m. It can also be a composite of different
  • Plastic layers are used, which are connected to each other, for example by means of an adhesive.
  • the thickness of the carrier film moves
  • micro-optical systems in the array as a security feature and / or as a decorative feature of
  • Security elements form trained pattern. For example, it may be provided that the spacing of adjacent microoptical systems is changed continuously or discontinuously or alternately. It can also be provided a repetitive offset or delay of the micro-optical systems, for example, be provided for every thirtieth micro-optical system in a row an offset by half the length of the micro-optical system. Counterfeiting of the security element is complicated by the fact that when copying the micro-optical layer and the image layer both must be brought into exact position to the pattern of the array. Also possible are statistical variations of the micro-optical systems, eg with respect to distance, position to each other and / or their shape. Furthermore, it can be provided that the microoptical layer comprises differently designed arrays of microoptical systems.
  • the arrays may differ, for example, in the dimensions and / or the arrangement of the micro-optical systems.
  • the micro-optical system can be constructed of alternating transparent and opaque or partially opaque areas. In the simplest case, these can be line grids, which are printed, for example. However, they may also be more complex arrangements of transparent and opaque areas. Such line grid can also be lamellar
  • the micro-optical layer comprises an aperture layer which has transparent and opaque areas.
  • the diaphragm layer can, for example, have alternating transparent and opaque strips and / or an array formed by pinhole diaphragms.
  • the strips and / or the pinhole diaphragms may be formed as through-holes or as transparent regions in the micro-optical layer. Because the transparency of a
  • the micro-optic layer may be opaque to light but transparent to other wavelengths of the electromagnetic spectrum.
  • transparent is a transmissivity of more than 50%, preferably more than 70%, more preferably more than 90% in at least one
  • the micro-optical layer comprises an array formed from microlenses.
  • the microlenses may be formed as spherical lenses, as aspherical lenses, as astigmatic lenses or as cylindrical lenses with symmetrical or asymmetrical shape. As further lens shapes, oval lenses, S-shaped lenses, circular or other curved lenses may be provided. The lenses may be in different patterns, e.g. be arranged hexagonally. For arrays with relatively large raster periods, the microlenses can also be formed as Fresnel lenses.
  • Image properties of Fresnel lenses may be worse than the aforementioned microlenses, the lower height of the Fresnel lenses can speak for their use.
  • the microlenses may be on the surface of the
  • Micro-optical layer or in recesses of the micro-optical layer can be arranged.
  • the micro-optical layer or areas of the micro-optical layer can be arranged.
  • Micro-optical layer can also be arranged in recesses of a spacer layer. Between the microlenses can be substantially flat Intermediate areas may be arranged, which, however, should be low in areal proportion.
  • the flat areas lying between the microlenses are opaque or partially opaque. This can be achieved for example by colors, imprints or metallization.
  • the flat areas can also be optical structures such as e.g. Have microstructures.
  • prisms and many other relief shapes, such as trapezoids, etc. can also be used in special cases.
  • trapezoids the horizontal areas are preferably opaque.
  • a combination of areas with different structures is also possible. These can be juxtaposed as well as interlaced or nested.
  • the upper side of the micro-optical layer can have one or more additional layers, in whole or in part, for example
  • the protective layers may be formed, for example, from paints with nanoparticles
  • Such a coated micro-optical layer can not be copied in its optical function by molding, for example galvanic molding.
  • micro-optical layer formed as a lens layer can be any suitable micro-optical layer formed as a lens layer.
  • plastics are usually thermoplastics or reactive systems.
  • reactive systems are: radiation-curing systems, for example UV-curing systems, thermally reactive systems, for example epoxy resin hardener systems, catalytically curing systems, hybrid systems, etc. Die
  • Starting materials may be liquid, semi-solid, pasty or solid. It is also possible to use thermoplastic elastomers. However, inorganic materials such as glass and combinations are also usable.
  • the lens layer may also be colored, for example by the addition of color pigments and / or dyes or may have an intrinsic color.
  • the generation of the microlenses can be carried out according to the prior art by thermal molding (replication), UV replication, printing processes or lithographic processes. It can be provided that the microlenses with at least two
  • the image plane is in the aforementioned parallel beam path in the focal point or near the
  • Patterned areas may be formed in the array having locally different orientation, for example 0 ° and 45 °.
  • the patterns of microlenses could be an additional
  • the respective focal point may lie in different levels of the security element.
  • the microlenses can also have haptic properties.
  • micro-optical systems are used in which the alignment of e.g. Cylindrical lenses are arranged in two areas at 90 ° to each other. If the exposure takes place in the first and second regions with an azimuth of 0 ° to the axis of the respective cylindrical lenses, then in each case tilting about the tilt axes, which are aligned with the longitudinal axes of the respective cylindrical lens in the first and in the second region, only in each case in one area a picture change (picture flip) visible. In the other area, the picture would remain static.
  • a picture change picture flip
  • step c) "defocused" is exposed so that the exposed areas, for example strips, are enlarged, the exposure then takes place, for example, in a certain angle of incidence range
  • Viewing angle range can be realized according to the
  • the security element is relatively tolerant to the position of the photoresist. Some tolerance to the position of the photoresist in relation to the microlens Focal points is essential in that it is certain
  • Gravure printing process may lead to variations in the microlens shape associated with a variation of the position of the focal point.
  • the microoptical layer has two or more microoptical systems arranged next to one another.
  • Micro-optical systems may be arranged in the form of a pattern and / or one or more motifs.
  • the micro-optical layer has two or more micro-optical systems arranged in an xy grid, wherein the x-axis of the xy-grid is arranged under an x-azimuth ( ⁇ ) to the longitudinal side of the carrier substrate and the y-axis is located below a y-azimuth (a q ) to the lateral side of the carrier substrate.
  • micro-optical systems are arranged in a distorted grid.
  • a distorted grid is understood to mean a grid whose longitudinal and transverse rows are not in the form of a straight line
  • Micro-optical systems are designed as ball lenses.
  • the height of the ball lenses can in a first example at a raster period of the array of about 35 ⁇ , a thickness of the formed as a lens layer
  • Micro-optical layer in the range of 20 ⁇ to 25 ⁇ and a
  • a thickness of the lens layer in the range of 50 ⁇ to 60 ⁇ and a total thickness of the lens layer and the carrier substrate of about 70 ⁇ the ball lenses have a height of about 7 ⁇ so flatter trained.
  • the x-azimuth ( ⁇ ) is equal to 90 °.
  • a negative photoresist is applied.
  • the master image is to be formed as a negative image.
  • the positive image and the negative image are characterized by the reversal of the brightness and / or the color of their pixels.
  • a positive photoresist is meant a resist in which the exposed areas are removed after development.
  • a negative photoresist the unexposed areas are removed.
  • the respective design elements are formed as transparent regions, in the case of negative masks the design elements are opaque.
  • the photoresist may be colorless or pigmented and / or colored and / or printed in multiple colors. As colors, dissolved dyes and / or pigments, including special pigments, as in the
  • Security area are used, for example, UV-fluorescent pigments used. Preference is given to pigments with small particle sizes below the layer thickness of the photoresist. Further preferred are so-called nanopigments, ie pigments with particle sizes below 1 ⁇ , preferably below 0.5 ⁇ .
  • the pigments may be inorganic or organic in nature be or mixtures of both. In addition to insoluble pigments and soluble dyes can be used.
  • the photoresist layer can be transparent, semitransparent or opaque, possibly opaque only in certain wavelength ranges. So can the colored
  • Photoresist for example, in the near UV, in which the photoresist is sensitive, be largely transparent, but appear substantially black in the visible wavelength range. It is also possible to use liquid-crystalline materials as the photoresist in which, if appropriate, additional spatial orientations of the liquid-crystalline molecules take place during the exposure process and / or curing process. The orientation of the molecules can e.g. on physical structures such as microstructures and / or by exposure to polarized light.
  • a positive photoresist is applied in process step b). It can also be positive and negative
  • Photoresists are used, e.g. in juxtaposed
  • the exposure can be at the same time or one after the other, if necessary with
  • a microstructure is formed in the lower side of the photoresist facing away from the carrier substrate or in the underside of the image layer facing away from the carrier substrate.
  • the microstructure may, for example, be a hologram, an optical lattice structure or the like.
  • the spacer layer may also have an optical lattice structure.
  • one or more color layers are applied or applied to the image layer.
  • HRI layer Metal layer or an HRI layer is applied to the photoresist or on the image layer.
  • ZnS or ⁇ 2 can be used.
  • image layer is formed as an etching mask and areas of the metal layer or the HRI layer not covered by image areas of the image layer are removed by etching.
  • the image layer is used as a lift-off layer.
  • lift-off describes a method in which the image layer is designed as a mask for detachment of further layers lying above the image layer to be colored lacquer coatings, which are coated flat, and which are structured in a washing process.
  • the image layer has a strongly pigmented and thus porous or slightly uneven lacquer layer which is soluble in a solvent. The image layer is dissolved with a suitable solvent so that the overlying
  • Metal layer as absorber layer, a spacer layer and a reflective metal layer.
  • Such a multilayer structure may in particular be optical viewing angle and / or illumination angle dependent
  • Metal layer and metal layer may also be present in a modified sequence. In this case, a color change effect is visible from the back.
  • the image layer is brought into contact with a transfer layer of a transfer film and the transfer layer is detached from the transfer film and onto the image layer, in particular only at the points where the image layer is located is transmitted.
  • a volume hologram layer is applied to the image layer after method step e). This can be done by a transfer film as described above or by
  • Procedural steps b), c) and e) (i-1) are repeated once, where i is at least 2.
  • the method steps b), c) and e) are carried out with an n-th photoresist (16) formed with an n-th color and / or n-th sensitivity, and that the method steps b) , c) and e) (i-1) times, where i is at least 2.
  • the n photoresists can be applied to the underside of the carrier substrate as n layers arranged at least partially one above the other.
  • the n photoresists are applied to the underside of the carrier substrate as a pattern, in particular as a striped pattern, or else in the form of graphic motifs.
  • the use of an exposure mask can be dispensed with.
  • step c) the exposure is carried out with an n-th exposure intensity.
  • different exposure intensities can influence, for example, the contrast of the partial images formed in the image layer.
  • the image layer is formed from two partial images, that in step c) the exposure is performed with a first incident azimuth, and that in process step d) the exposure with a second incident azimuth, which is different by 90 ° from the first incidence azimuth.
  • the angle of incidence may also vary.
  • Metal layer is removed in the areas not covered by the image layer by etching.
  • the semitransparent metal layer may be formed with a transmittance in the range of 1% to 95%, preferably in the range of 5% to 70%.
  • a layer formed with a microstructure is applied to the underside of the carrier substrate or the underside of the carrier substrate is formed with a microstructure.
  • the image layer is formed from a first and a second image layer, wherein the first image layer has a first partial image and the second image layer has a second partial image such that the process step b) is carried out with a first photoresist that after the process step c) the method step e) is carried out to form the first image layer, and that the following further method steps are carried out:
  • Image layer g) applying a second photoresist to the semitransparent
  • optical structures such as lenses, prisms, trapezoids, etc., are in a compensation medium formed with the optical refractive index of the micro-optical systems;
  • the master image is designed as an electronically controllable display. It can be provided, for example, a transmitted light display, wherein it is possible in a simple manner, in addition to static information to write personalized information in the image layer.
  • personalized information may be embodied as human-readable information and / or as machine-readable information.
  • the electronic control can be provided a computer in which the personalized information is stored or can be entered via an input device. It can further be provided that, in method step c), the parallel light beams projected onto the microoptical layer are passed through filters and / or diaphragms before striking the microoptical layer.
  • Filters may be provided, for example, to spectral components for which the Photoresist is not sensitive to filter out. Filters or diaphragms can be used in particular before and / or after the parallelization of the light. However, it does not necessarily have to be parallel light. Thus, a certain angle of incidence range is allowed or even desired. In the case of cylindrical lenses, this is also dependent on the orientation of the angle of incidence range with respect to the lens axis.
  • a carrier substrate in which the microoptical layer is formed in a first region on the upper side of the carrier substrate, and in which the microoptical layer is formed in a second region on the lower side of the carrier substrate, and that the method steps b) to e) are carried out in the second area as in the first area, with the difference that in the second area the upper side of the carrier substrate forms the underside of the carrier substrate and vice versa.
  • a security element is formed, which can be arranged, for example, in a window of a security document, wherein different optical effects can be formed when viewing the front side and the rear side of the security element. It can also be provided, the window in the
  • the subregions may be formed as elements of a grid.
  • first region and the second region of the carrier substrate overlap one another in an overlapping region.
  • overlap region can be formed in this way, for example, a third security feature.
  • a single-layer or multi-layer adhesive layer is applied to the underside and / or top side of the security element.
  • the bottom and / or top of the security element may also include one or more additional layers, such as e.g. have an adhesive layer and / or a primer layer.
  • the trained according to the method described above security elements can form a variety of optical effects.
  • a morphing effect can be achieved, with a first image being converted to a second image through various stages.
  • the consideration of the security elements 1 can be provided in reflection and / or in transmission.
  • the image layer or image layers can represent a static image on the side remote from the microoptical elements. Subsequent to the production of the image layer, further layers can be completely or partially, for example by printing or by transfer of a
  • Transfer layer of a carrier in particular by hot stamping and / or cold stamping applied.
  • the layers may be metals such as aluminum, HRI layers, colorless or colored (e.g., complementary to the color of the
  • optical structures into the image layer or into additional layers, e.g. by replication (thermal replication or UV replication).
  • optical structures can also be in a
  • Spacer layer are introduced before the image layer is applied.
  • the spacer layer may be a volume hologram layer.
  • micro-optic layer there may be a variety of additional materials between the micro-optic layer and the image layer, for example
  • colored layers full area pigmented layers (security pigments, for example UV fluorescent pigments);
  • HRI layers for example from ZnS.
  • the security elements can be formed with further elements which can serve as movement, in particular as static optical reference points, lines, etc.
  • Other elements could be additional moiré elements, other printed or optically variable or metallic representations that complement or complement the image flip.
  • the illustrated image flip can also be represented by one or more other technologies, for example by an optically variable element.
  • the image flip can be synchronous, asynchronous or inverse.
  • Elements of the image layer can also be used as markers, in particular as register marks and / or control marks for controlling further process steps, in particular for applying further layers and / or elements
  • a hologram a Kinegram®
  • a lens effect a volume hologram
  • security printing a decorative print
  • a decorative print a UV fluorescent pressure
  • IR upconverter IR upconverter
  • OVI pressure Optically Variable Ink
  • Combinations can be arranged side by side. You can also be nested or overlapping. Pixels, data, etc. may be complementary, complementary or repeated in different technologies.
  • the partial images contained in the image layer can be supplemented with further images or information of the security element. Thus, the subpictures of the image layer can deal with printed information outside the
  • Security elements represent an overall picture or overall pictures. In this case, part of the overall picture would be variable in particular by the lenticular flip.
  • Another example would be the combination with an optically variable one
  • the security elements can provide additional functions besides the optical effects, such as machine readability.
  • a lenticular flip or moire magnifier may be machine-readable, with different ones
  • Barcodes or positive / negative barcodes can be displayed. These codes can be used for authentication / verification.
  • the image layer may contain a moire coding, ie one or more images of the image flip may additionally be processed with a moiré analyzer or via an image capture and editing are analyzed.
  • the detection of a moiré effect can also take place from the side facing away from the lenses.
  • a lenticular flip may include moire magnifier information that is analyzed by a second analyzer, with the moiré analyzer positioned over the lens layer.
  • Photoresist micro images with a slightly different pitch (distance of the image repetition) relative to the pitch of the array formed by micro-optical systems preferably the array formed of microlenses, particularly preferably of the microlens grid formed array are generated.
  • this can in particular be a continuous or quasi-continuous
  • Image sequence of the generated fields are generated.
  • enlarged images of the exposed n-th partial images or microimages are thereby produced when the security element is viewed, with preferably moving and / or enlarging and / or reducing and / or opposing and / or rotating design elements being shown when the security element is tilted or rotated ,
  • This is advantageously a 1D or 2D Moire Magnifier effect.
  • the exposure or the projection is carried out such that when viewing the security element of different
  • the micro-optical layer comprises an array formed by microlenses or an array formed by microlens raster and the exposure or the projection is carried out in such a way that the n-th sub-images are distorted as microimages, as in 1 or 2 dimensions Micro images or as parts of micro images are generated, which in particular when viewing the security element from different
  • Security elements produced according to the method described above can be used, for example, in the following security documents or other security products or commercial products:
  • the security elements are suitable for so-called
  • window banknotes can be banknotes with physical openings in the substrate or, for example, polymer banknotes with transparent polymer areas.
  • the security elements 1 can the Cover window area partially or completely, with a viewing in the window area from both the front and the back of the bill in reflection and / or in transmission is possible.
  • the security element can also be constructed directly on the substrate, ie the polymer substrate would represent the carrier substrate.
  • the security element may also be part of a plastic card, wherein the security element is applied to a plastic card or is produced as an embedded and / or integral part of the plastic card.
  • the above-described elements can also be used outside the field of security documents or outside the security area for decorative objects and advertising materials or as functional elements, for example as components of displays, light pipe and
  • the security elements are particularly suitable for products with so-called see-through elements such. Window bills, security thread applications for banknotes and / or documents with transparent areas etc.
  • Fig. 1 is a Pnnzipdar ein of the structure and the function of a method according to the first method of the invention
  • Fig. 5.1 shows the process step in Fig. 4.4 in a schematic
  • FIG. 5.2 shows the process step in Fig. 4.6 in a schematic
  • Fig. 7.1 shows a first embodiment of an embodiment of the in
  • Fig. 7.2 shows a second embodiment of an embodiment of the method steps shown in Fig. 6.3 and 6.4 used exposure device in one
  • Fig. 7.3 shows a third embodiment of an embodiment of the in
  • Fig. 6.3 and 6.4 process steps used exposure device in one
  • Fig. 1 1 .1 to 1 1 .7 process steps of a fifth embodiment of the method according to the invention in schematic
  • Fig. 12 is a positive mask in a schematic representation; 13 shows a negative mask in a schematic representation;
  • FIGS. 15a and 15b show a second embodiment of a mask
  • FIG. 17a to 17c a fourth embodiment of a mask
  • 18a to 18c a first embodiment of an aperture layer
  • 19 shows a second embodiment of an aperture layer
  • FIG. 20 shows a third embodiment of a diaphragm layer
  • FIG. 21 shows a fourth embodiment of an aperture layer
  • FIG. 22 shows a fifth embodiment of an aperture layer
  • FIG. 23 shows a sixth embodiment of a diaphragm layer
  • FIG. Fig. 24 shows a seventh embodiment of an aperture layer
  • Fig. 25 shows a sixteenth embodiment of a
  • Fig. 26 shows a seventeenth embodiment of a
  • Fig. 27 shows a first embodiment of a
  • Fig. 29 shows a third embodiment of a
  • Fig. 33 shows a seventh embodiment of a
  • Fig. 34 shows an eighth embodiment
  • Fig. 35 shows a ninth embodiment of a
  • Fig. 36 shows a tenth embodiment of a
  • a security element 1 comprising a micro-optical layer 1 1 formed as a lens layer 11, a carrier film 13 and an image layer
  • the lens layer 1 11 is arranged on the upper side of the carrier film 13.
  • the lens layer 1 11 has a plurality of microlenses 12, which in a
  • Grid are arranged adjacent to each other.
  • the microlenses 12 are not individually recognizable with an unaided eye from a viewing distance of about 250 mm, when the grid period is less than about 300 ⁇ . In the embodiment shown in Fig. 1, the grid period is about 35 ⁇ .
  • the microlenses 12 are formed in the embodiment shown in FIG. 1 as cylindrical lenses or as spherical lenses or as ball lenses, which are arranged on the surface of the lens layer 11 1.
  • the microlenses 12 may also be designed as aspherical lenses.
  • the image layer 14 is arranged on the lower side of the carrier film 13 and lies in the image plane of the microlenses 12. The image plane lies at the focal point or near the focal point of the microlenses 12.
  • the image layer 14 comprises two partial images 141 and 14r in the embodiment shown in FIG for the case of cylindrical lenses are rastered into strip-shaped image sections 141a and 14lr, wherein the image sections 141a and 14lr are arranged alternately and register-accurately under the microlenses 12.
  • "points" are created under the lens, which line up
  • Image sections 141a and 14lr have a width of typically less than 17.5 ⁇ , in particular a width of 3 ⁇ to 10 ⁇ at said screen period of 35 ⁇ .
  • Image areas may also have positions where none of the images are visible.
  • the tilting axis does not have to be exactly aligned with the image sections in order to recognize a picture change. Thus, even with significant deviations, for example, with an angular deviation of 30 °, a picture change visible.
  • the partial image 141 shows star-shaped symbols, the partial image 14r a portrait.
  • Security elements are referred to as a lenticular flip or image flip.
  • the sub-images 141 and 14r are macro images, i. H. the
  • Fields 141 and 14r are the same or nearly the same size as the fields visible in the observation.
  • the dimensions of the layer structure are dependent on the optical design of the lenses and the optical properties of the spacer layer.
  • the optical refractive indices of the materials used are an essential parameter.
  • a thickness of the lens layer 1 11 in the range of 20 ⁇ to 25 ⁇ and a total thickness of the lens layer 11 and the carrier film 14 in the range of 35 ⁇ to 40 ⁇ have the microlenses 12 a height from about 12 ⁇ on.
  • a thickness of the lens layer 11 1 in the range of 50 ⁇ to 60 ⁇ and a total thickness of the lens layer 11 and the carrier film 14 of about 70 ⁇ have the
  • Microlenses 12 a height of about 7 ⁇ on.
  • Fig. 2.1 shows a first embodiment of the lens layer 1 11.
  • Lens layer 11 has cylindrical lenses 12z formed as microlenses whose longitudinal axes are aligned with the tilt axis 1 a.
  • Fig. 2.2 shows a second embodiment of the lens layer 1 11. Die
  • Lens layer 1 11 has 12k formed as spherical lenses microlenses, which are arranged in adjacent longitudinal rows and transverse rows, the longitudinal axes of the transverse rows with the tilt axis 1 a are aligned.
  • Fig. 2.3 shows a third embodiment of the lens layer 1 11. Die
  • Lens layer 1 11 is like the lens layer described in Fig. 1 11 11, with the difference that the longitudinal axes of the adjacent transverse rows 12r with the tilt axis 1 a an azimuth a q include, and that the longitudinal axes of the adjacent longitudinal rows 121 with the Tilting axis 1 a include an azimuth ⁇ .
  • the azimuth denotes one
  • Variation width of the azimuth is of importance in cases where more complex lens shapes or lens arrays are used.
  • FIGS. 3.1 to 3.5 show, in one exemplary embodiment, a method for forming the lens layer 1 11 arranged on the carrier film 13.
  • the method is described below as a roll-to-roll method.
  • Alternative methods are, for example, roll-to-sheet processes or sheet-to-sheet processes.
  • Also possible is a one-off production of the security elements.
  • Fig. 3.1 shows a first process step in which the carrier film 13 is provided.
  • the carrier film 13 can be a film made of a thermoplastic, for example polyethylene,
  • the thickness of the carrier film typically ranges from 6 ⁇ to 200 ⁇ , preferably from 12 ⁇ to 50 ⁇ , more preferably from 16 ⁇ to 36 ⁇ .
  • Fig. 3.2 shows a second process step in which the top of the
  • Carrier film 13 is coated with a replication layer 15 made of a UV-curing lacquer.
  • the coating can be carried out in a coating station, at which the carrier film 13 is guided past.
  • the coating can be made from a solution or solvent-free, possibly at elevated temperatures.
  • Between layers 1 1 and 13 it is also possible to provide further optional single-layer or multi-layer layers, for example a primer layer or a barrier layer or barrier layer.
  • FIG. 3.3 shows a third method step in which an embossing stamp 15s is pressed onto the replication layer 15.
  • the underside of the stamping die 15s facing the replication layer 15 has a surface structure which corresponds to the negative of the surface structure of the lens layer 11.
  • Embossing stamp 15s is designed as a stamping roller, wherein the with the
  • Replizier Anlagen 15 coated carrier film 13 is pressed with a pressure roller to the embossing roller.
  • FIG. 3.4 shows a fourth method step, in which the embossed replication layer 15 arranged on the carrier film 13 is guided past a UV radiation source, so that the replication layer cures to the lens layer 11.
  • the UV exposure can also from the support side through the
  • Carrier film 13 done.
  • Another variant is a UV exposure during the embossing process, i. while the dies 15s and the
  • Replicating layer 15 are in contact so that the structure of the stamping die 15s is molded into the replication layer 15.
  • the embossing die 15s may be flat, half-round or round, depending on the method used.
  • the UV exposure can also be carried out under a protective gas atmosphere.
  • a protective gas atmosphere e.g. a nitrogen atmosphere or an argon gas atmosphere over the
  • Replication layer 15 is generated to largely exclude oxygen during exposure. In the exposure process also certain effects can be precompensated.
  • the final product could be used on a curved surface.
  • the replication layer 15 would be guided on a curved surface during the exposure process.
  • the precompensation can be done by adjusting the local
  • FIG. 3.5 shows a fifth method step in which the carrier film 13 coated with the lens layer 11 is present as a semi-finished product which is wound on a take-up drum in accordance with the above-described roll-to-roll method. It may also be provided that the replication layer 15 as a
  • the replication layer is preferably thermoplastic plastics or paints. Thermoplastic elastomers can also be used.
  • lens layer 11 onto the carrier film 13. It can further be provided that the lens layer 1 11 is integrally formed with the carrier film 13 and that the lens layer 11 is embossed into the carrier film 13. Alternatively, a separately prepared lens layer with already configured lenses can be applied to the carrier film, for example by means of gluing.
  • FIGS. 4.1 to 4.8 show a first embodiment of the first embodiment
  • FIGS. 4.1 to 4.8 are schematic sectional views, with layers being shown in each case as a rectangular area for a better overview.
  • FIG. 4.1 shows a first method step in which the carrier foil 13, on the upper side of which the lens layer 11 is formed, is provided. The structure of the lens layer 11 is described above.
  • FIG. 4.2 shows a second method step in which a photoresist 16 is applied to the underside of the carrier film 13.
  • Typical starting materials for photoresists 16 are, for example, polymethyl methacrylate, novolak,
  • photoresists 16 typically contain a photosensitive component. Water-soluble photoresists 16 can also be used.
  • the process steps of applying the photoresist 16 and the introduction or introduction of the microlenses can also in a changed order or also take place simultaneously.
  • the coating with the photoresist 16 can take place over the whole area or part of the area.
  • the photoresist may be applied in the form of a pattern or in the form of one or more motifs. Processes are coating or printing from solution (solvent-containing, aqueous
  • Positive photoresists 16 and / or negative can be used
  • the photoresist 16 can be colorless or pigmented and / or colored and / or printed in multiple colors.
  • colors are dissolved dyes and / or pigments, and special pigments, such as those used in the security field, for example, UV-fluorescent pigments used.
  • Preference is given to pigments with small particle sizes below the layer thickness of the photoresist 16.
  • nanopigments i. Pigments with particle sizes below 1 ⁇ preferably below 0.5 ⁇ .
  • the pigments may be inorganic or organic in nature or mixtures of both. In addition to pigments and soluble dyes can be used.
  • the photoresist 16 may be transparent, semitransparent or opaque, possibly opaque only in certain wavelength ranges.
  • the colored photoresist may be substantially transparent in the near UV, where the photoresist is sensitive, but appear substantially black in the visible wavelength range.
  • liquid-crystalline materials as photoresists in which, if appropriate, additional spatial orientations of the liquid-crystalline molecules take place during the exposure process or hardening process.
  • the orientation of the molecules can be formed, for example, on physical structures such as microstructures and / or by exposure by means of polarized light.
  • the photoresists 16 may be applied colorless or monochrome or multicolor. They can also be applied in the form of one or more patches.
  • the patch shape may also represent a motif and / or a pattern, for example, a country contour and / or be interrupted, for example, be formed strip-shaped.
  • Photoresists 16 can also be applied in multiple layers. The layers may have different shapes and / or properties.
  • Figs. 4.3 and 4.4 show a third process step, in which the
  • Lens layer 1 11 a first formed as a picture mask master image 141m is placed ( Figure 4.3) and the photoresist 16 with parallel light rays at a first angle of incidence ßi, which is equal to a first
  • Fig. 5.1 shows the third process step in plan view.
  • the master image 141m may be formed as a positive mask (see FIG. 12) or as a negative mask (see FIG. 13).
  • Figs. 4.5 and 4.6 show a fourth process step, in which the
  • Lens layer 1 1 is a second formed as a picture mask master image 14rm is placed ( Figure 4.5) and the photoresist 16 with parallel light rays under a second angle of incidence ⁇ r , which is equal to a second viewing angle, through which the lens layer 11 is exposed (FIG. 4.6). By the exposure, a second latent field is formed in the photoresist 16.
  • Fig. 5.2 shows the fourth process step in plan view.
  • the angle ß r can also be 0 °.
  • Exposure device 17 is generated.
  • the exposure device 17 comprises a radiation source 171 and a projection objective 17o.
  • the radiation source 171 is a lamp which emits light in the UV-near range or in the UV range. The wavelength of the light is tuned to the properties of the photoresist 16.
  • the radiation source 171 is arranged at the focal point of the projection objective 17o, so that parallel light beams exit from the projection objective 17o.
  • Figs. 4.7 and 4.8 show a fifth process step in which the exposed photoresist 16 is developed to the image layer 14.
  • Figs. During development for example, the unexposed areas of the photoresist 16 are removed, for example by washing with a solvent.
  • the exposed areas of the photoresist 16 are chemically altered by the action of the light rays so that their solubility is lower than the solubility of the exposed areas.
  • Typical developer solutions are, for example, alkali-containing solutions. Thereafter, residues of the developer solution in corresponding aftertreatment processes, eg washing with
  • Removal of the photoresist may be assisted by sponges, brushes, high pressure nozzles, etc.
  • Developer solutions can also be used organic solutions or solvents. There are also photoresists which essentially use water as developer solutions. Aggregates in the developer solution, such as isopropanol, serve to better wetting the photoresist.
  • the image layer 14 comprising the sub-images 141 and 14r is shown.
  • an additional UV exposure possibly also at a different wavelength, can take place in order to further harden the image layer 14.
  • Post-curing may also be effected by means of electron beam radiation (e-beam) and / or via a chemical crosslinker and / or by aftertreatment at elevated temperatures. It is also possible to apply another layer beforehand in order to cure them together or to achieve a better bond between the layers.
  • FIGS. 14a to 14c show suitable master images which are designed as positive masks.
  • 14a shows a first master image 141m
  • FIG. 14b shows a second master image 14mnn
  • FIG. 14c shows a third master image 14rm.
  • the master images 141m, 14mm and 14rm are each exposed from different angles. When viewing a security element formed in this way, three subpictures appear in succession whose motifs are symbolized by the letters A, B, C, which are visible only at the associated tilt angle.
  • Figs. 15a and 15b show another embodiment of master images 141m, 14rm.
  • Figs. 15a and 15b show another embodiment of master images 141m, 14rm.
  • Figs. 16a to 16c show an embodiment which is like the embodiment described in Figs. 14a to 14c is formed, with the difference that when viewing a thus formed security element
  • Figs. 17a to 17c show an embodiment which is like the embodiment described in Figs. 14a to 14c is formed, with the difference that when viewing a thus formed security element
  • Figs. 6.1 to 6.6 show a second embodiment of the first method according to the invention, in which the image layer 14 in a
  • FIGS. 6.1 to 6.6 are schematic sectional views, with layers being shown in each case as a rectangular area for a better overview.
  • FIG. 6.1 shows a first method step in which the carrier foil 13, on the upper side of which the lens layer 11 is formed, is provided. The structure of the lens layer 11 is described above.
  • FIG. 6.2 shows a second method step in which a photoresist 16 is applied to the underside of the carrier film 13.
  • FIG. 6.3 shows a third method step, in which a first master image 141m is transmitted to the lens layer 11 by a parallel projection and focused onto the photoresist 16 by the microlenses 12 of the lens layer 11.
  • the projection beams strike the lens layer 11 at a first angle of incidence ⁇ i, which is equal to a first viewing angle.
  • the exposure forms a first latent field in the photoresist 16.
  • FIG. 6.4 show a fourth method step in which a second master image 14rm is transmitted to the lens layer 11 by a parallel projection.
  • the projection beams pass through the lens layer 11 at a second angle of incidence ⁇ r which is equal to a second viewing angle.
  • ⁇ r which is equal to a second viewing angle.
  • Exposure device 17 is generated.
  • the exposure device 17 comprises a Radiation source 171, a condenser 17k, a receptacle 17a for the
  • Radiation source 171 is, for example, a lamp which emits light in the UV-near range or in the UV range. The wavelength of the light is tuned to the properties of the photoresist 16.
  • the master image 141m, 14rm which may include one or more images, patterns, etc., is projected out of the position of the projection lens 17o from a defined position relative to the lens layer 11, the projection lens 17o and the microlenses 12 forming an optical system in which a parallel beam path is formed between the projection objective 17 o and the microlenses 12. Both a 1: 1 image and an enlargement and / or reduction of the master image 141m, 14rm can take place.
  • the pitch of the array formed from microlenses 12 more preferably to the pitch of the array formed by a microlens grid can be generated.
  • a continuous or quasi-continuous image sequence of the generated partial images 141, 14r can be produced. In particular, this will be when viewing the
  • Security elements 1 enlarged images of the exposed n-th partial images 141, 14r or micro images generated, wherein when tilting or rotating the Security elements 1 are preferably moving and / or enlarging and / or reducing and / or opposing and / or rotating
  • the exposure or the projection is performed such that when looking at the security element 1 from different
  • the master image 141m, 14rm may be formed as a mask.
  • the mask may for example consist of a metallic aperture with recesses or of a film material which has been blackened accordingly. interesting is the use of masks with partial images in which the respective
  • Partial images have a selective permeability to certain
  • Wavelengths for example, a permeability to UV-A and UV-B.
  • a selective exposure can take place from different angles.
  • the advantages are the use of only one exposure mask or the registration of the two images.
  • Register or register or register accuracy or registration accuracy is to be understood as a positional accuracy of two or more elements and / or layers relative to one another.
  • the register accuracy move within a given tolerance and be as small as possible.
  • register accuracy of multiple elements and / or layers to each other is an important feature in order to increase process reliability.
  • the positionally accurate positioning can in particular by means of sensory, preferably optically detectable registration marks or
  • Register marks take place. These register marks or register marks can either represent special separate elements or regions or layers or themselves be part of the elements or regions or layers to be positioned.
  • master images 141m, 14rm can be black and white representations
  • Grayscale images color images, images with regions of different UV absorption ("color image” in the UV region), halftone images, etc. It is also possible to produce three-dimensional images that convey, for example, a depth effect of a displayed object.
  • Fig. 7.3 shows an exposure device 17, which like the in Fig. 7.2
  • the display 17d can be designed, for example, like a display known from laser projectors.
  • the display 17d enables the introduction of individualized information into the photoresist or into the image layer. Examples of individualized
  • the radiation source 171 may be formed as a laser, so that the laser beam can be deflected suitable and can be modulated in intensity, for example, on and off can be modulated.
  • a polarizer can be located in the beam path, by means of which linearly or circularly polarized light can be generated.
  • the condenser 17k uniformly illuminates the master image 141m, 14rm arranged in the receptacle 17a.
  • the master image 141m, 14rm is arranged with respect to the projection lens 17o so that the master image 141m, 14rm is projected onto the lens array in a limited angular range.
  • FIGS. 6.5 and 6.6 show a fifth method step which corresponds to the method step described above in FIGS. 4.7 and 4.8.
  • the image layer 14 comprising the sub-images 141 and 14r is shown. It is also possible to use a line exposure or a
  • Line arrays as exposure unit are understood to mean an exposure unit in which the exposure is over a very narrow area
  • Exposure line is done. This can be done by exposure by means of a gap.
  • the gap is in this case carried out over the surface to be exposed and / or the surface to be exposed below the line gap.
  • a row gap e.g. a metallic aperture can be used.
  • a line imagesetter can also be an array of juxtaposed UV diodes, a so-called array, are used.
  • the line array preferably with high resolution, can be moved during the exposure over the area to be exposed.
  • Single exposure elements in the line array correspond to a resolution of 600 dpi to 3600 dpi.
  • the area to be exposed moves below the line array. The latter is particularly advantageous in roll-to-roll processes.
  • Figs. 8.1 to 8.12 show a third embodiment of the
  • FIGS. 8.1 to 8.12 are schematic sectional views, with layers being shown in each case as a rectangular area for a better overview.
  • FIG. 8.1 shows a first method step in which the carrier foil 13, on whose upper side the lens layer 11 is formed, is provided.
  • the structure of the lens layer 11 is described above.
  • FIG. 8.2 shows a second method step in which a semitransparent metal layer 18 ms is applied to the underside of the carrier film 13, for example by vapor deposition.
  • FIG. 8.3 shows a third process step in which a photoresist 16 is applied to the semitransparent metal layer 18ms.
  • FIG. 4 shows a fourth method step in which a first master image 141m is transmitted to the lens layer 11 by a parallel projection and focused onto a first photoresist 16 by the microlenses 12 of the lens layer 11.
  • the projection beams strike the lens layer 11 at a first angle of incidence ⁇ i which is equal to a first viewing angle.
  • the exposure forms a first latent field in the first photoresist 16.
  • Figures 8.5 and 8.6 show a fifth process step in which the exposed first photoresist 16 is developed into a first image layer 141 formed as an etching mask, as described above. In Fig. 8.6, the first image layer 141 formed of image portions 141a is shown.
  • FIG. 8.7 shows a sixth method step, in which the semitransparent metal layer 18 ms is patterned by means of etching, as a result of which the non-
  • Pixels of the first image layer 141 covered areas of
  • Metal layer to be removed 18ms As the etching medium, e.g. an aqueous lye are used.
  • FIG. 8.8 shows a seventh method step in which a second photoresist 16 is applied to the first image layer 141.
  • FIG. 8.9 shows an eighth method step in which the lens layer 11 is covered by a compensation layer 11k.
  • the compensation layer 1 1 k has the same or approximately the same optical refractive index, in particular with a refractive index difference of at most 0.2, as the microlenses 12 of the lens layer 1 1, so that the optical effect of the microlenses 12th
  • the compensation layer 1 1 k may be, for example, a liquid.
  • Fig. 8.10 shows a ninth process step in which the first image layer 141 acts as an image mask.
  • parallel projection beams are perpendicular to the first image layer 141, expose the second photoresist 16 under the first image layer 141, and form a latent field. It is also possible to deposit with a translucent colored layer, in particular followed by a
  • the compensation layer 1 1 k is removed again from the lens layer 11.
  • Fig. 8.1 1 and 8.12 show an eleventh process step in which the latent image formed in the second photoresist 16 is made into a flat surface
  • Image stripe 14a formed second image layer 14r is developed.
  • the image strips 14ra are visible over a very large angle range (permanently).
  • FIGS. 10.1 to 10.8 show a fourth embodiment of the invention
  • the method steps illustrated in FIGS. 10.1 to 10.8 are designed like the method steps described in FIGS. 4.1 to 4.8, with the difference that the exposure of the photoresist 16 is effected by a micro-optical system designed as an aperture layer 11b.
  • the diaphragm layer 1 1 b may be constructed of alternating transparent and opaque or partially opaque areas. In the simplest case, it may be line grids, e.g.
  • FIG. 18a to 18c show embodiments for diaphragm layers 1 1 b with line grid, wherein the directional arrows shown in the figures, the
  • Fig. 18a the line grid is arranged perpendicular to the tilting direction, in Fig. 18b obliquely to the tilting direction and in Fig. 18c parallel to the tilting direction.
  • Fig. 19 shows an embodiment of the diaphragm layer 1 1 b, in which the line grid is formed of two sections which enclose an obtuse angle with each other, as shown in Fig. 19.
  • Fig. 20 shows an embodiment of the diaphragm layer 1 1 b, wherein the line grid is formed of two sections, which are arranged at a right angle to each other.
  • Fig. 21 shows an embodiment of the diaphragm layer 1 1 b, in which the line grid is S-shaped.
  • Fig. 22 shows an embodiment of the diaphragm layer 1 1 b, in which the line grid is interrupted by oblique line-shaped sections.
  • Fig. 23 shows an embodiment of the diaphragm layer 1 1 b, in which the line grid is interrupted by oblique line-shaped sections and alternately lines of the line grid are interrupted.
  • FIGS. 18a to 24 cylindrical lenses with an analog arrangement can also be used.
  • Fig. 24 shows an embodiment of the diaphragm layer 1 1 b, in which the line grid has a star-shaped boundary, which is perceptible by a viewer as a star-shaped symbol.
  • 1 1 .1 to 1 1 .7 show a fifth embodiment of the
  • FIG. 11 shows a first method step in which a carrier foil 13, on whose upper side a lens layer 11 is formed, is provided.
  • the structure of the lens layer 11 is described above.
  • Fig. 11 shows a second process step in which a photoresist 15 is applied to the underside of the carrier film 13, e.g. is applied in the form of a field or a pattern in a defined area.
  • the application may e.g. by means of a printing process or by transfer from a carrier by means of hot stamping or cold stamping.
  • the process steps of applying the photoresist 15 and the introduction or introduction of the microlenses of the lens layer 11 can also take place in a changed sequence or simultaneously. Positive photoresists and / or negative photoresists can be used.
  • the photoresist 15 may be colorless or pigmented and / or colored and / or printed in multiple colors.
  • colors are dissolved dyes and / or pigments, and special pigments, such as those used in the security field, for example, UV-fluorescent pigments used.
  • Preference is given to pigments with small particle sizes below the layer thickness of the photoresist 15.
  • nanopigments ie pigments with grain sizes below 1 ⁇ preferably below 0.5 ⁇ .
  • the pigments may be inorganic or organic in nature or mixtures of both. In addition to pigments and soluble dyes can be used.
  • the photoresist 15 may be transparent, semitransparent or opaque, possibly opaque only in certain wavelength ranges.
  • a colored photoresist 15 may be substantially transparent in the near UV, where the photoresist 15 is sensitive, but appear substantially black in the visible wavelength range.
  • liquid-crystalline materials as photoresists 15 in which additional spatial orientations of the liquid-crystalline molecules may additionally take place during the exposure process or hardening process.
  • the orientation of the molecules can e.g. on physical structures such as e.g. Microstructures and / or also be formed by exposure by means of polarized light.
  • the photoresists 15 can be applied colorless or monochrome or multicolor.
  • FIG. 11 shows a third process step in which the photoresist 15 is exposed through the lens layer 11 with parallel light beams at a first angle of incidence ⁇ i equal to a first viewing angle. By the exposure, a first latent field is formed in the photoresist 15.
  • ⁇ i a first angle of incidence
  • FIG. 11 shows a third process step in which the photoresist 15 is exposed through the lens layer 11 with parallel light beams at a first angle of incidence ⁇ i equal to a first viewing angle.
  • a first latent field is formed in the photoresist 15.
  • all suitable methods for generating parallel light or nearly parallel light can be used. This also includes the use of lasers or laser diodes, possibly in combination with suitable optics.
  • 1 1 .4 shows a fourth method step, in which the exposed photoresist 15 is developed into a first partial image 141 and optionally optionally a fifth method step in which a further photoresist 15 is applied.
  • the further photoresist 15 is applied to the underside of the carrier sheet 13, e.g. applied in the form of another field or a pattern in a defined area.
  • the further photoresist 15 can be applied in addition to the first partial image 141, partially overlapping or congruent. In the exemplary embodiment illustrated in FIG. 10.4, the further photoresist 15 is applied next to the first partial image 141.
  • FIG. 11 shows a sixth process step in which the further photoresist 15 is exposed through the lens layer 11 with parallel light beams at a second angle of incidence ⁇ r which is equal to a second viewing angle. As a result of the exposure, a second latent partial image is formed in the further photoresist 15.
  • FIG. 11 shows a seventh process step in which the exposed further photoresist 15 is developed into a second partial image 14r.
  • the sixth and seventh process steps can be repeated several times.
  • FIG. 11 shows a variant in which the second partial image 14r partially covers the first partial image 141.
  • FIGS. 9.1 to 9.15 show further exemplary embodiments of security elements 1 which can be produced by the above-described methods and / or by varying the above-described methods.
  • FIGS. 9.1 to 9.15 are schematic sectional views, with layers being shown in each case as a rectangular area for a better overview.
  • the security elements 1 may be formed on their underside with a single-layer or multi-layer adhesive layer (not shown in FIGS. 9.1 to 9.15).
  • the underside of the security element 1 shown in Figs. 9.1 to 9.13 may also include one or more additional layers such as e.g. a single or multi-layer adhesive layer and / or
  • the security element on the underside of an additional single-layer or multi-layer protective layer for example in the form of a PET film have. This can be glued or laminated.
  • the protective layer may have an additional one- or multi-layer adhesive layer on the outside.
  • Fig. 9.1 shows a security element 1, in which the image layer 14 is covered by a color layer 18f.
  • the ink layer 18f may be printed, for example.
  • the color layer 18f may be, for example, translucent or opaque and / or multicolored and / or be UV-active. Particularly preferred are opaque layers or opaque and scattering layers.
  • the coloring layer 18f is among a plurality of when viewed through the lens layer
  • a security element 1 in which the image layer 14 is covered by a reflection layer 18r.
  • a reflection layer 18r a metal layer and / or an HRI layer may be provided.
  • a structuring of the reflection layer 18 r after the application of the reflection layer 18 r, a structuring of the
  • Reflection layer 18r be provided in register with the image layer 14, whereby the color effect is enhanced.
  • the structuring can be done by known methods.
  • FIG. 9.3 shows a security element 1 in which a multilayer structure is applied to the image layer 14. In that shown in Fig. 9.3
  • the multilayer structure comprises a semitransparent metal layer 18mt as absorber layer, a spacer layer 18a and a reflective layer 18r.
  • the semitransparent metal layer 18mt is disposed on the lower surface of the image layer 14. In the thus formed
  • Security element 1 is visible as a background color change effect.
  • the two image layers 141 and 14r may have different colors. It is also possible to apply the two photoresists in a strip grid, to jointly expose and develop.
  • Fig. 9.5 shows a security element 1, which is formed like the security element shown in Fig. 9.4, with the difference that the two photoresists 16 are formed with different sensitivity.
  • the first photoresist 16 may be formed with a higher sensitivity than the second photoresist 16.
  • mixed colors for example the mixed color magenta from the colors red and blue.
  • the security element is mounted on a substrate or product, e.g. a security document, with a horizontal or
  • FIG. 9.6 shows a security element 1, in which a microstructure 13s is molded into the underside of the carrier foil 13.
  • the microstructure 13s may also be incorporated in a further layer applied to the carrier film 13.
  • the microstructure 13s can form different optical effects,
  • the image layer 14 is coated with a reflective layer 18r.
  • the coating can optionally be provided.
  • Fig. 9.7 shows a security element 1, in which a semitransparent
  • Metal layer 18ms is arranged on the underside of the carrier film 13, wherein the metal layer 18ms has been partially demetallized after the formation of the image layer 14 formed as an etching mask.
  • the security element 1 thus has a metallically coated image layer 14 from the viewing side.
  • an additional additional layer 18ms is arranged on the back of the image layer 13, wherein the metal layer 18ms has been partially demetallized after the formation of the image layer 14 formed as an etching mask.
  • the security element 1 thus has a metallically coated image layer 14 from the viewing side.
  • an additional metal layer 18ms is arranged on the underside of the carrier film 13, wherein the metal layer 18ms has been partially demetallized after the formation of the image layer 14 formed as an etching mask.
  • Color layer may be applied to increase the contrast and / or to create colored areas. It is also possible to deposit with a second, e.g. differently colored with a translucent colored lacquer layer colored metal layer analogous to the embodiment described in Fig. 8.7.
  • Fig. 9.8 shows a security element 1, wherein the back of the
  • Security element 1 is formed by a structured metal layer 18m.
  • the structured metal layer 18m has removed areas in the lift-off process which are congruent with the structured image layer 14.
  • the image layer 14 was vapor-deposited with the metal layer 18m, and then the image layer 14 was removed in the exposed areas in the lift-off process,
  • a positive photoresist was used.
  • the structured metal layer 18m may be deposited with a color layer. It is also possible to deposit with a translucent colored layer, in particular followed by a metal layer, in order to produce the effect of a colored reflection layer.
  • FIG. 9.9 shows a security element 1 in which a transfer layer 18u of a transfer film is arranged on the image layer 14.
  • the image layer 14 is formed as a thermocouple, which after heating with the on the
  • Transfer film trained transfer layer 18u is brought into contact and after cooling, the transfer layer adheres to the image layer by means of the thermo-slider. Then, the security element 1 is peeled off from the transfer film, wherein the bonded to the image layer 14 areas of the transfer layer 18u are deducted.
  • the security element 1 a large variety of designs is possible. Thus, for example, a continuous color gradient or a true color image can be formed, or optical structures can be transferred to the image layer 14.
  • FIG. 9.10 shows a security element 1 in which a volume hologram 18v is arranged on the image layer 14.
  • 9.1 shows a security element 1 in which a partially metallized layer 18mp is arranged between the lower side of the carrier film 13 and the colored image layer 14.
  • the security element 1 forms a flip color metal. The effect can be achieved by tilting the security element 1 or through
  • Rotation by 180 ° occur. It can be formed a continuous transition metal / color in an exposure.
  • a flip metal / color can be formed by two exposures and structuring.
  • Continuous transition an exposure and use of the colored photoresist in one area as a color and in the other area for further structuring of the previously partially generated metal layer.
  • FIG. 9.12 shows another security element 1, which was produced according to the method described above in FIGS. 8.1 to 8.12.
  • FIG. 9.13 shows a security element 1 in which a functional layer 18v is arranged below the carrier film 13, on the side facing away from the carrier film 13 a multilayer image layer comprising a first image layer 14, a reflection layer 18r and a second image layer 14 '.
  • Fig. 9.14 shows a security element 1, which is designed as the security element described in Fig. 1, with the difference that the
  • Security element 1 has a first region, as shown in FIG. 1
  • the security element 1 has a second region which is formed in mirror image to the first region.
  • the lens layer 11 is on the underside of the
  • the image layer 14 is arranged on the upper side of the security element 1.
  • the security element 1 can be arranged, for example, in a window of a security document, wherein when viewing the front and the back of the security element 1 different optical effects can be formed. It may also be provided to configure the window in the security document 1 so that it only releases the view of the second area.
  • the first and / or the second area may have unconnected portions.
  • the subregions may be formed as elements of a grid.
  • Fig. 9.15 shows a security element 1, which was produced by combining two security elements according to Fig. 4.8 and Fig. 9.1. The preparation can be done, for example, by laminating the two
  • FIGS. 25 and 26 show security elements 1, in which the microoptical layer is formed as a prism layer 1 1 p, wherein the prism layer in FIG. 26 is trapezoidal in cross section.
  • FIGS. 9.1 to 9.15, 25 and 26 can form a variety of optical effects, wherein it is also possible to form combinations of the security elements shown in FIGS. 9.1 to 9.15 and 25 and 26.
  • a morphing effect can be achieved wherein a first image is converted to a second image through various stages.
  • the consideration of the security elements 1 can be provided in reflection and / or in transmission.
  • the image layer or image layers can represent a static image on the side remote from the microoptical elements.
  • further layers may be wholly or partially, e.g. by printing or by transferring one
  • Transfer layer of a carrier in particular by hot stamping and / or cold stamping applied.
  • the layers may be metals such as aluminum, HRI layers, colorless or colored (e.g., complementary to the color of the
  • Colored image layer 14 one or more layers of plastic layers
  • optical structures into the image layer or into additional layers, e.g. by replication (thermal replication or UV replication).
  • optical structures can also be in a
  • Spacer layer are introduced before the image layer is applied.
  • the spacer layer may be a volume hologram layer. Between the lens layer 1 1 and the image layer 14, a variety of additional materials may be present, for example
  • - pigmented layers security pigments, for example UV fluorescent pigments
  • the security elements can be formed with further elements which can serve as movement, in particular as static optical reference points, lines, etc.
  • Other elements could be additional moiré elements, other printed or optically variable or metallic representations that complement or complement the image flip.
  • the illustrated image flip can also be represented by one or more other technologies, for example by an optically variable element.
  • the image flip can be synchronous, asynchronous or inverse.
  • Elements of the image layer can also be used as markers, in particular as register marks and / or control marks for controlling further process steps, in particular for applying further layers and / or elements
  • decorative elements for example, as a hologram, a Kinegrann®, a lens effect, a volume hologrman, security printing, a decorative print, a UV fluorescence print
  • Upconverter IR Upconverter
  • OVI Optically Variable Ink
  • machine detectable pigments 3rd line features
  • the combinations can be arranged next to each other. They can also be nested or overlapping. Picture elements as well as included data etc. can
  • the partial images contained in the image layer can be supplemented with further images or information of the security element 1.
  • the sub-images of the image layer can be printed or printed with information outside the security element 1 an overall image or overall images. In this case, part of the overall picture would be variable in particular by the lenticular flip.
  • Another example would be the combination with an optically variable one
  • the colors of the optically variable color occurring at different viewing angles could be visible synchronously with the colors of the lenticular flips.
  • the security elements can provide additional functions besides the optical effects, such as machine readability.
  • a lenticular flip or moire magnifier may be machine-readable, with different ones
  • Barcodes or positive / negative barcodes can be displayed. These codes can be used for authentication / verification.
  • the image layer 14 may include moire coding, i.
  • One or more images of the image flip can additionally be analyzed with a moiré analyzer or via image acquisition and processing.
  • the detection of a moiré effect can also take place from the side facing away from the lenses.
  • a lenticular flip may include moire magnifier information that is analyzed by a second analyzer, with the moiré analyzer positioned over the lens layer.
  • the security elements are suitable for so-called
  • window technology documents with transparent areas for transmitted light viewing and / or front and back viewing can be banknotes with physical openings in the substrate or, for example, polymer banknotes transparent polymer areas.
  • the security elements 1 can partially or completely cover the window area, wherein viewing in the window area from both the front and the back of the banknote in reflection and / or in transmission is possible.
  • the security element can also be constructed directly on the substrate, ie the polymer substrate would represent the carrier substrate.
  • the security element may also be part of a plastic card, wherein the security element 1 is applied to a plastic card or card is generated as an embedded and / or integral part of the plastic.
  • the above-described elements can also be used outside the area of security documents or outside the security area for decorative objects and advertising materials or as functional elements, for example as components of displays and eyeglasses.
  • the security elements are particularly suitable for products with so-called see-through elements such. Window bills, security thread applications for banknotes and / or documents with transparent areas etc.
  • Figs. 27 to 36 show embodiments of security documents associated with one or more of the above-described security elements
  • FIG. 27 shows a security document 2 embodied as a banknote, which has a strip-shaped security identifier 1.
  • FIGS. 28a and 28b show a banknote
  • Image motifs of security element 1 change from A, B, C to D, E, F.
  • FIG. 29 shows a security document 2 embodied as a banknote, which has a strip-shaped security element 1, which is formed in sections with different image effects:
  • the areas A to E may be adjacent to each other and / or overlapping each other.
  • FIG. 30 a shows a security document 2 embodied as a banknote, which has a window 2 f 1.
  • Fig. 30b shows the security document shown in Fig. 30a, which is formed on its front side with a laminated strip-shaped security element 1, which covers the window 2f.
  • the security element 1 has a first, symbolized by the letter X motif that above the Window 2f is arranged, and a second, by the letter Y
  • FIGS. 31 a and 31 b show a security document 2, which, like the security document described in FIG. 30 b, is designed, with the difference that a first motif, symbolized by the letter A, is located above the
  • FIGS. 32a and 32b show a security document 2 which, like the security document described in FIGS. 31 a and 31 b, is designed with the
  • Figs. 33 and 34 show a card size ID1
  • Fig. 34 shows a security document 2, which is like the security document described in Fig. 33 is formed, with the difference that a
  • strip-shaped security element 1 which covers the window 2f, is laminated on the front side of the security document 2.
  • Security element 1 has a heart-shaped lenticular flip-element which is disposed above the window 2f, and a star-shaped hologram disposed under the window 2f.
  • Fig. 35 shows a security document 2 with a window 21 in one
  • Security document 2 is disposed above the window 21, wherein a corresponding with the lens layer 1 11 image layer 14 is disposed on the back of the security document 2.
  • FIG. 36 shows a security document 2 which, like the security document described in FIG. 35, is formed, with the difference that the image layer 14 is arranged on the rear side of the carrier substrate 13.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
  • Credit Cards Or The Like (AREA)
  • Holo Graphy (AREA)
  • Silver Salt Photography Or Processing Solution Therefor (AREA)

Abstract

L'invention concerne un procédé de fabrication d'un élément de sécurité (1) réalisé sous la forme d'un rabat lenticulaire, comprenant une couche micro-optique (11), un substrat de support (13) et une couche d'images (14), la couche d'images (14) comportant n images (14l, 14r) pour n = 1 à i, qui sont visibles à partir d'un n-ième angle d'observation associé à la n-ième image (14l, 14r), et n étant au moins 1. Les images sont reproduites sur une résine photosensible (16) au moyen d'une lumière parallèle par tirage par contact ou par projection. Une fois la résine photosensible (16) développée, une couche d'images (14) est présente, laquelle comporte les i images.
EP17723054.7A 2016-05-19 2017-05-08 Procédé de fabrication d'éléments de sécurité comprenant un rabat lenticulaire Withdrawn EP3458902A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102016109193.6A DE102016109193A1 (de) 2016-05-19 2016-05-19 Verfahren zur Herstellung von Sicherheitselementen mit einem Lenticular Flip
PCT/EP2017/060931 WO2017198486A2 (fr) 2016-05-19 2017-05-08 Procédé de fabrication d'éléments de sécurité comprenant un rabat lenticulaire

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EP3458902A2 true EP3458902A2 (fr) 2019-03-27

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EP17723054.7A Withdrawn EP3458902A2 (fr) 2016-05-19 2017-05-08 Procédé de fabrication d'éléments de sécurité comprenant un rabat lenticulaire

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US (1) US10850552B2 (fr)
EP (1) EP3458902A2 (fr)
AU (1) AU2017266212B2 (fr)
DE (1) DE102016109193A1 (fr)
WO (1) WO2017198486A2 (fr)

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FR3084207B1 (fr) 2018-07-19 2021-02-19 Isorg Systeme optique et son procede de fabrication
JP7089249B2 (ja) * 2019-01-17 2022-06-22 独立行政法人 国立印刷局 偽造防止印刷物
FR3092674A1 (fr) * 2019-02-07 2020-08-14 Oberthur Fiduciaire Sas Ensemble constitue d’un reseau bidimensionnel de dispositifs micro-optiques et d’un reseau de micro-images, procede pour sa fabrication, et document de securite le comportant
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CN113795389A (zh) * 2019-05-20 2021-12-14 克瑞尼股份有限公司 使用纳米颗粒调谐聚合物基质层的折射率以优化微光学(mo)聚焦
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Also Published As

Publication number Publication date
DE102016109193A1 (de) 2017-11-23
US20190152251A1 (en) 2019-05-23
WO2017198486A2 (fr) 2017-11-23
US10850552B2 (en) 2020-12-01
AU2017266212B2 (en) 2022-02-24
AU2017266212A1 (en) 2018-12-06
WO2017198486A3 (fr) 2018-01-11

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