EP3392959A1 - Elementary cell of a transmitter network for a reconfigurable antenna - Google Patents

Elementary cell of a transmitter network for a reconfigurable antenna Download PDF

Info

Publication number
EP3392959A1
EP3392959A1 EP18166901.1A EP18166901A EP3392959A1 EP 3392959 A1 EP3392959 A1 EP 3392959A1 EP 18166901 A EP18166901 A EP 18166901A EP 3392959 A1 EP3392959 A1 EP 3392959A1
Authority
EP
European Patent Office
Prior art keywords
elementary cell
antenna
phase shift
dielectric substrate
shift circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP18166901.1A
Other languages
German (de)
French (fr)
Other versions
EP3392959B1 (en
Inventor
Antonio Clemente
Laurent Dussopt
Luca Di Palma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of EP3392959A1 publication Critical patent/EP3392959A1/en
Application granted granted Critical
Publication of EP3392959B1 publication Critical patent/EP3392959B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
    • H01Q3/26—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture
    • H01Q3/30—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array
    • H01Q3/34—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array by electrical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/12—Supports; Mounting means
    • H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/2283—Supports; Mounting means by structural association with other equipment or articles mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/48—Earthing means; Earth screens; Counterpoises
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H01Q15/24—Polarising devices; Polarisation filtersĀ 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00—Antenna arrays or systems
    • H01Q21/0087—Apparatus or processes specially adapted for manufacturing antenna arrays
    • H01Q21/0093—Monolithic arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
    • H01Q3/44—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the electric or magnetic characteristics of reflecting, refracting, or diffracting devices associated with the radiating element
    • H01Q3/46—Active lenses or reflecting arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04—Resonant antennas
    • H01Q9/0407—Substantially flat resonant element parallel to ground plane, e.g. patch antenna

Definitions

  • the invention relates to an elementary cell of a transmitter network for a reconfigurable antenna at an operating frequency, preferably between 4 GHz and 170 GHz.
  • the invention also relates to a reconfigurable antenna comprising a transmitter network comprising such elementary cells.
  • the generally modifiable characteristic are the frequency response (in amplitude and in phase), the radiation pattern (also called beam), and the polarization.
  • the reconfiguration of the frequency response covers various functionalities such as frequency switching, frequency tuning, bandwidth variation, phase shift, frequency filtering and so on.
  • the reconfiguration of the radiation pattern covers various features such as angular scanning of the beam pointing direction (also called misalignment), beamwidth (i.e., concentration of radiation in a particular direction), spatial filtering, beam or multibeam formation (eg multiple narrow beams replacing a wide beam) etc.
  • the technical field of the invention relates more precisely to a reconfigurable antenna of the transmitting network type.
  • Such an elementary cell of the state of the art is not entirely satisfactory insofar as it can only generate two phase states for the transmission of the incident wave.
  • the two phase states are separated by 180 Ā° insofar as the first and second switches, respectively having an on state and a locked state and alternately controlled, excite the transmission antenna in phase or in phase opposition with the receiving antenna.
  • the transmission phase is controlled with a quantization of 1 bit, that is to say two phase states at 0 Ā° or 180 Ā°.
  • This one-bit quantization is likely to limit the performance of the reconfigurable antenna of the transmitting network type, in particular in terms of directivity, and consequently of gain, and level of the side lobes (SLL for " Side Lobe Level " in English ).
  • Such an elementary cell makes it possible, thanks to such a reception antenna and to the second phase shift circuit, to obtain a second pair of phase states for the transmission of the incident wave.
  • Such an elementary cell can thus generate four phase states for transmitting the incident wave.
  • the phase states within each pair are separated by 180 Ā° insofar as the switches of the first and second phase shift circuits excite the transmitting antenna (respectively the receiving antenna) in phase or in phase opposition with the receiving antenna (respectively the transmission antenna).
  • the transmission phase is controlled with a quantization of 2 bits, and not just 1 bit as in the state of the art.
  • This 2-bit quantization makes it possible to envisage an improvement in the performance of the reconfigurable antenna of the transmitting network type, in particular in terms of directivity, and consequently of gain, and of secondary lobe level.
  • the elementary cell according to the invention may comprise one or more of the following characteristics.
  • the elementary cell comprises a delay line configured so that the second pair of phase states is 90 Ā° out of phase with the first pair of phase states.
  • line is meant a track made of an electrically conductive material.
  • Electrode conductive means that the material has an electrical conductivity at 300 K greater than 10 3 S / cm.
  • phase states 0 Ā°, 90 Ā°, 180 Ā° and 270 Ā°. These four phase states are particularly advantageous because they make it possible to improve the focusing capacity of the transmitting network and consequently the gain.
  • the delay line extends from the receiving antenna.
  • the delay line has a length adapted to the desired phase shift.
  • the receiving antenna remains easily accessible for modifying the delay line, in contrast to the phase shift circuits arranged within the architecture of the elementary cell.
  • dielectric substrate is meant a substrate made of a material having an electrical conductivity at 300 K less than 10 8 S / cm.
  • an advantage provided is to allow a polarization of the switches with minimal space, and without disturbing the reception antenna capture pattern.
  • ground plane is to form an electromagnetic shield between the receiving antenna and the transmitting antenna.
  • the second surface of the second dielectric substrate is provided with quarter-wave lines electrically connected to the ground plane.
  • quarter wave line is meant a line having a length equal to one quarter of the operating wavelength of the antenna.
  • an advantage provided by such lines is to form an open circuit (impedance tends to infinity) at the operating frequency.
  • the elementary cell comprises a first bonding film arranged to bond the second surface of the second dielectric substrate to the second surface of the first dielectric substrate.
  • an advantage provided by such a bonding film is to be able to join the first and second dielectric substrates with a minimum bulk.
  • an advantage provided is to allow a polarization of the switches with minimal space, and without disturbing the radiation pattern of the transmission antenna.
  • the elementary cell comprises a second bonding film arranged to bond the second surface of the third dielectric substrate to the first surface of the second dielectric substrate.
  • an advantage provided by such a bonding film is to be able to secure the second and third dielectric substrates with a minimum bulk.
  • the elementary cell comprises a main interconnection hole, arranged to electrically connect the receiving antenna and the transmission antenna; the main via through the first, second, and third dielectric substrates as well as the first and second bonding films; the main interconnection hole being electrically insulated from the ground plane; the main interconnection hole being connected to the quarter wave lines.
  • the invention also relates to a reconfigurable antenna at an operating frequency, comprising a transmitter network comprising a set of elementary cells according to the invention.
  • the first dielectric substrate 6 may have a thickness of about 254 microns when the operating frequency is 29 GHz.
  • the first dielectric substrate 6 may be made of a commercial material such as RT / duroidĀ® 6002.
  • the receiving antenna 2 is a planar antenna (" patch " in English).
  • the first and second capture surfaces 20, 21 are arranged to capture the incident wave E i .
  • the first and second capture surfaces 20, 21 are disjoint in the sense that they are separated from each other by a separation zone ZS1 so as to be electrically isolated from each other.
  • a slot is advantageously formed in the receiving antenna 2 to electrically isolate the first and second capture surfaces 20, 21.
  • the slot defines the separation zone ZS1.
  • the slot is preferably annular, rectangular section. Of course, other shapes are conceivable for the slot, such as an elliptical or circular shape.
  • the electrical insulation of the first and second capture surfaces 20, 21 may be provided by a dielectric material.
  • the first and second capture surfaces 20, 21 advantageously have an axis of symmetry so as not to degrade the polarization of the incident wave E i .
  • the first capture surface 20 preferentially forms a ring with a rectangular section.
  • the second capture surface 21 preferentially forms a rectangular band.
  • the second capture surface 21 is advantageously circumscribed by the first capture surface 20 in order to avoid the formation of parasitic currents.
  • the first and second capture surfaces 20, 21 are preferably made of a metallic material, more preferably copper. Additional capture surfaces may advantageously be stacked on the first and second capture surfaces 20, 21 in order to increase the bandwidth of the reception antenna 2.
  • the elementary cell 1 advantageously comprises a delay line LR configured so that the second pair of phase states is phase shifted by 90 Ā° with respect to the first pair phase states.
  • the delay line LR has a length adapted so that the second pair of phase states is out of phase by 90 Ā° with respect to the first pair of phase states.
  • the delay line LR advantageously extends from the reception antenna 2. More precisely, as illustrated in FIG. figure 3 , the delay line LR extends from the first pick-up surface 20 of the receiving antenna 2.
  • the delay line LR is preferably made of a metallic material, more preferably copper.
  • the second dielectric substrate 7 may have a thickness of the order of 254 microns when the operating frequency is 29 GHz.
  • the second dielectric substrate 7 may be made of a commercial material such as RT / duroidĀ® 6002.
  • the mass plane PM is preferably made of a metallic material, more preferably copper.
  • the ground plane PM may have a thickness of the order of 17 ā‡ m when the operating frequency is 29 GHz.
  • the second surface 71 of the second dielectric substrate 7 is advantageously provided with quarter-wave lines 710 electrically connected to the ground plane PM via a via 711 passing through the second dielectric substrate 7.
  • Wave 710 is preferably made of a metallic material, more preferably copper.
  • the third dielectric substrate 8 may have a thickness of the order of 508 microns when the operating frequency is 29 GHz.
  • the third dielectric substrate 8 may be made of a commercial material such as RT / duroidĀ® 6002.
  • the transmission antenna 3 is a planar antenna (" patch " in English).
  • the first and second radiation surfaces 30, 31 are disjoint in the sense that they are separated from each other by a separation zone ZS2 so as to be electrically isolated from each other.
  • a slot is advantageously formed in the transmission antenna 3 to electrically isolate the first and second radiation surfaces 30, 31.
  • the slot defines the separation zone ZS2.
  • the slot is preferably annular, rectangular section. Of course, other shapes are conceivable for the slot, such as an elliptical or circular shape.
  • the electrical insulation of the first and second radiation surfaces 30, 31 may be provided by a dielectric material.
  • the first and second radiation surfaces 30, 31 advantageously have an axis of symmetry so as not to degrade the polarization of the transmitted wave E t by the transmission antenna 3 by minimizing the excitation of unwanted resonance modes.
  • the first radiation surface 30 preferentially forms a ring with a rectangular section.
  • the second radiation surface 31 preferentially forms a rectangular band.
  • the second radiation surface 31 is advantageously circumscribed by the first radiation surface 30 in order to avoid the formation of parasitic currents.
  • the first and second radiation surfaces 30, 31 are preferably made of a metallic material, more preferably copper. Additional radiation surfaces may advantageously be stacked on the first and second radiation surfaces 30, 31 in order to increase the bandwidth of the transmission antenna 3.
  • the reception antenna 2 and the transmission antenna 3 may advantageously be oriented relative to one another so as to modify the polarization of the incident wave E i .
  • a rotation of the transmission antenna 3 of 90 Ā° relative to the receiving antenna 2 makes it possible, for example, to pass from a vertical polarization of the incident wave E i to a horizontal polarization of the transmitted wave. E t .
  • the first phase shift circuit 4 comprises polarization lines 810 arranged to bias the first and second switches 40, 41.
  • the polarization lines 810 are electrically conductive tracks, forming control means of the first and second switches 40, 41.
  • Polarization lines 810 are preferably made of a metallic material, more preferably copper.
  • polarization lines 810 of the first phase shift circuit 4 are advantageously arranged at the second surface 81 of the third dielectric substrate 8.
  • the polarization lines 810 of the first phase shift circuit 4 are electrically connected to the transmission antenna 3, more precisely to the first radiating surface 30 of the transmission antenna 3, via a via 811 passing through the third dielectric substrate 8.
  • the polarization lines 810 of the first phase shift circuit 4 may be connected to contact pads or decoupling circuits 812.
  • the contact pads or decoupling circuits 812 are preferably made of a metallic material, more preferably copper.
  • the second phase shift circuit 5 comprises polarization lines 610 arranged to bias the first and second switches 50, 51.
  • the polarization lines 610 are electrically conductive tracks, forming means for controlling the first and second switches. 50, 51.
  • the polarization lines 610 are preferably made of a metallic material, more preferably copper.
  • the polarization lines 610 of the second phase shift circuit 5 are advantageously arranged at the second surface 61 of the first dielectric substrate 6.
  • the polarization lines 610 of the second phase shift circuit 5 are electrically connected to the reception antenna 2 , more precisely to the first capture surface 20 of the receiving antenna 2, via a via 611 passing through the first dielectric substrate 6.
  • the polarization lines 610 of the second phase shift circuit are advantageously connected to decoupling circuits 612.
  • the decoupling circuits 612 are preferably made of a metallic material, more preferably copper.
  • the first and second switches 40, 41 of the first phase shift circuit 4 may extend over the first and second radiating surfaces 30, 31 of the transmission antenna 3.
  • the first and second switches 40, 41 of the first phase shift circuit 4 may be formed at the first surface 80 of the third dielectric substrate 8, in the separation zone ZS2 of the first and second radiating surfaces 30, 31 of the transmission antenna 3.
  • the first and second switches 40 , 41 of the first phase shift circuit 4 are advantageously formed at the first surface 80 of the third dielectric substrate 8, in the separation zone ZS2, in a monolithic manner with the transmission antenna 3.
  • monolithic is meant that the transmission antenna 3 and the first and second switches 40, 41 of the first phase shift circuit 4 share a single substrate, in this case the third dielectric substrate 8.
  • first and second switches 50, 51 of the second phase shift circuit 5 can extend over the first and second capture surfaces 20, 21 of the receiving antenna 2.
  • the first and second switches 50, 51 of the second phase shift circuit 5 may be formed at the first surface 60 of the first dielectric substrate 6, in the separation zone ZS1 of the first and second capture surfaces 20, 21 of the reception antenna 2.
  • the first and second switches 50, 51 of the second phase-shift circuit 5 are advantageously formed at the first surface 60 of the first dielectric substrate 6, in the separation zone ZS1, monolithically with the receiving antenna 2.
  • monolithic is meant that the receiving antenna 2 and the first and second switches 50, 51 of the second phase shift circuit 5 share a single substrate, in this case the first dielectric substrate 6.
  • the first and second switches 40, 41; 50, 51 of the first and second phase shift circuits 4, 5 may be pin-type diodes, MEMS (" Micro Electro-Mechanical Systems " in English), NEMS (" Nano Electro-Mechanical Systems " in English).
  • the pin-type diodes can be made of AlGaAs.
  • the first switch 40 of the first phase shift circuit 4 alternates between the on state and the off state, while simultaneously the second switch 41 of the first phase shift circuit 4 alternates between the off state and the on state.
  • the first and second switches 40, 41 belonging to the first phase shift circuit 4 have two opposite states, either on / off, or off / on. Passing / blocking / blocked states are not allowed.
  • the first switch 50 of the second phase shift circuit 5 alternates between the on state and the off state, while simultaneously the second switch 51 of the second phase shift circuit 5 alternates between the off-state and the off-state. passing state.
  • the first and second switches 50, 51 belonging to the second phase shift circuit 5 have two opposite states, either passing / blocking or blocking / passing. Passing / blocking / blocked states are not allowed. As shown in the table below, it is possible to obtain four phase states. The passing state is denoted "1" while the blocked state is denoted "0".
  • First Switch 40 Second Switch 41 First Switch 50 Second Switch 51 Phase state 1 0 1 0 0 Ā° 1 0 0 1 90 0 1 1 0 180 Ā° 0 1 0 1 270 Ā°
  • the receiving antenna 2 and the transmission antenna 3 are electrically connected to each other, to feed the coupling and, in part through a via hole ( "via" in English) main VP, preferably central, preferably metal.
  • the main via VP passes through an opening in the ground plane PM.
  • the main via VP is not in contact with the ground plane PM so that the main via VP is electrically isolated from the ground plane PM.
  • the main interconnection hole VP is advantageously connected to the quarter-wave lines 710.
  • the main interconnection hole VP has a diameter of the order of 150 ā‡ m. .
  • the main interconnection hole VP is preferably connected to the receiving antenna 2 by a first connection point.
  • the main interconnection hole VP is preferably connected to the transmission antenna 3 by a second connection point.
  • the position of the first and second connection points varies according to the specific geometry of the reception and transmission antennas 2, 3 so as to excite the fundamental mode of resonance.
  • the first and second connection points are respectively located near the center of the receiving antenna 2 and the transmitting antenna 3, that is to say in the center of the second capture surface 21 of the antenna 2 and the center of the second radiating surface 31 of the transmission antenna 3.
  • the first and second switches 40, 41 of the first phase shift circuit 4 extend on either side of the second connection point.
  • the first and second switches 50, 51 of the second phase shift circuit 5 extend on either side of the first connection point.
  • the main via VP passes through the first, second and third dielectric substrates 6, 7, 8.
  • the main interconnection hole VP connects the center of the second capture surface 21 to the center of the second radiating surface 31 of the transmission antenna 3.
  • the main interconnection hole VP extends in a direction corresponding to the normal to the second capture surface 21, and normal to the second radiating surface 31.
  • the elementary cell 1 advantageously comprises a first bonding film FC1 arranged to bond the second surface 71 of the second dielectric substrate 7 to the second surface 61 of the first dielectric substrate 6.
  • the first bonding film FC1 is interposed between the first and second dielectric substrates 6, 7.
  • the first bonding film FC1 may have a thickness of about 114 microns when the operating frequency is 29 GHz.
  • the elementary cell 1 advantageously comprises a second bonding film FC2 arranged to bond the second surface 81 of the third dielectric substrate 8 to the first surface 70 of the second dielectric substrate 7.
  • the second bonding film FC2 is interposed between the second and third dielectric substrates 7, 8.
  • the second bonding film FC1 may have a thickness of about 114 microns when the operating frequency is 29 GHz.
  • first and second bonding films FC1, FC2 may be made of a thermoplastic copolymer type material such as chlorotrifluoroethylene (CTFE).
  • CTFE chlorotrifluoroethylene
  • Commercial bonding films include CuCladĀ® 6700.
  • main via VP also crosses the first and second bonding films FC1, FC2.
  • the transmitting network RT comprises at least one radiation source S, preferably emitting in a spectral range between 4 GHz and 170 GHz.
  • the radiation source (s) S are arranged to irradiate a set of elementary cells 1.
  • the transmission band is relatively wide (> 10%) and insertion losses are low ( ā‡ 3 dB).
  • the invention is not limited to the exposed embodiments. Those skilled in the art are able to consider their technically operating combinations, and to substitute equivalents for them.

Abstract

Cette cellule ƩlƩmentaire (1) comporte :
- une antenne de rƩception (2), planaire ;
- une antenne de transmission (3), planaire, et comprenant des premiĆØre et deuxiĆØme surfaces de rayonnement (30, 31) disjointes ;
- un premier circuit de dĆ©phasage, comprenant des premier et second commutateurs (40, 41) prĆ©sentant respectivement un Ć©tat passant et un Ć©tat bloquĆ©, en alternance, entre les premiĆØre et deuxiĆØme surfaces de rayonnement (30, 31) de l'antenne de transmission (3) ;
et est remarquable en ce que l'antenne de rĆ©ception (2) comprend des premiĆØre et deuxiĆØme surfaces de captation (20, 21) disjointes ; et en ce que la cellule Ć©lĆ©mentaire (1) comporte un deuxiĆØme circuit de dĆ©phasage comprenant des premier et second commutateurs (50, 51) prĆ©sentant respectivement un Ć©tat passant et un Ć©tat bloquĆ©, en alternance, entre les premiĆØre et deuxiĆØme surfaces de captation (20, 21) de l'antenne de rĆ©ception (2).

Figure imgaf001
This elementary cell (1) comprises:
- a reception antenna (2), planar;
a planar transmission antenna (3) comprising disjointed first and second radiation surfaces (30, 31);
a first phase shift circuit, comprising first and second switches (40, 41) respectively having an on state and a blocked state, alternately, between the first and second radiating surfaces (30, 31) of the transmission antenna; (3);
and is remarkable in that the receiving antenna (2) comprises disjointed first and second sensing surfaces (20, 21); and in that the elementary cell (1) comprises a second phase shift circuit comprising first and second switches (50, 51) respectively having an on state and a blocked state, alternately, between the first and second pick-up surfaces (20). , 21) of the receiving antenna (2).
Figure imgaf001

Description

Domaine techniqueTechnical area

L'invention concerne une cellule ƩlƩmentaire d'un rƩseau transmetteur pour une antenne reconfigurable Ơ une frƩquence de fonctionnement, de prƩfƩrence comprise entre 4 GHz et 170 GHz. L'invention concerne Ʃgalement une antenne reconfigurable comportant un rƩseau transmetteur comprenant de telles cellules ƩlƩmentaires.The invention relates to an elementary cell of a transmitter network for a reconfigurable antenna at an operating frequency, preferably between 4 GHz and 170 GHz. The invention also relates to a reconfigurable antenna comprising a transmitter network comprising such elementary cells.

Par Ā« reconfigurable Ā», on entend qu'au moins une caractĆ©ristique de l'antenne peut ĆŖtre modifiĆ©e au cours de sa durĆ©e de vie, aprĆØs sa fabrication. La ou les caractĆ©ristiques gĆ©nĆ©ralement modifiables sont la rĆ©ponse frĆ©quentielle (en amplitude et en phase), le diagramme de rayonnement (appelĆ© Ć©galement faisceau), et la polarisation. La reconfiguration de la rĆ©ponse frĆ©quentielle couvre diffĆ©rentes fonctionnalitĆ©s telles que la commutation de frĆ©quences, l'accord en frĆ©quence, la variation de bande passante, le dĆ©phasage, le filtrage frĆ©quentiel etc. La reconfiguration du diagramme de rayonnement couvre diffĆ©rentes fonctionnalitĆ©s telles que le balayage angulaire de la direction de pointage du faisceau (appelĆ© Ć©galement dĆ©pointage), l'ouverture du faisceau (c'est-Ć -dire la concentration du rayonnement suivant une direction particuliĆØre), le filtrage spatial, la formation d'un faisceau ou d'un multifaisceau (par exemple plusieurs faisceaux Ć©troits remplaƧant un faisceau large) etc.By "reconfigurable" is meant that at least one characteristic of the antenna can be modified during its lifetime, after its manufacture. The generally modifiable characteristic (s) are the frequency response (in amplitude and in phase), the radiation pattern (also called beam), and the polarization. The reconfiguration of the frequency response covers various functionalities such as frequency switching, frequency tuning, bandwidth variation, phase shift, frequency filtering and so on. The reconfiguration of the radiation pattern covers various features such as angular scanning of the beam pointing direction (also called misalignment), beamwidth (i.e., concentration of radiation in a particular direction), spatial filtering, beam or multibeam formation (eg multiple narrow beams replacing a wide beam) etc.

Concernant la reconfiguration du diagramme de rayonnement, il existe diffƩrents types d'antenne reconfigurable, notamment :

  • une antenne rĆ©seau Ć  commande de phase (Ā« Phased array antenna Ā» en langue anglaise),
  • une antenne Ć  rĆ©seau rĆ©flecteur (Ā« Reflectarray antenna Ā» en langue anglaise),
  • une antenne Ć  rĆ©seau transmetteur (Ā« Transmitarray antenna Ā» en langue anglaise).
Concerning the reconfiguration of the radiation pattern, there are different types of reconfigurable antenna, including:
  • a phased array antenna ( Phased array antenna ),
  • a reflector array antenna (" Reflectarray antenna " in English),
  • a transmitting antenna (" Transmitarray antenna " in English).

Le domaine technique de l'invention concerne plus prƩcisƩment une antenne reconfigurable de type rƩseau transmetteur.The technical field of the invention relates more precisely to a reconfigurable antenna of the transmitting network type.

De telles antennes reconfigurables sont particuliĆØrement avantageusement Ć  partir de la bande C (4-8 GHz) jusqu'Ć  la bande D (110-170 GHz) pour les applications suivantes :

  • radars automobiles d'assistance et d'aide Ć  la conduite, dans une perspective de sĆ©curitĆ© active,
  • systĆØmes d'imagerie et de surveillance Ć  trĆØs haute rĆ©solution,
  • systĆØmes de communications Ć  trĆØs haut dĆ©bit en ondes millimĆ©triques (communications inter-bĆ¢timents ou intra-bĆ¢timents en environnement domotique ou immotique, lien courte portĆ©e),
  • liaisons de tĆ©lĆ©mesure sol-satellite en orbite basse LEO (pour Ā« Low Earth Orbit Ā» en langue anglaise) en bande Ka, tĆ©lĆ©communications par satellite avec source primaire reconfigurable (SOTMā„¢ pour Ā« Satcom-on-the-Move Ā» en langue anglaise, Internet, TĆ©lĆ©vision etc.),
  • systĆØmes de liaison point-Ć -point et point-Ć -multipoint (rĆ©seaux mĆ©tropolitains, systĆØmes Ā« Fronthaul Ā» et Ā« Backhaul Ā» pour les rĆ©seaux cellulaires, accĆØs radio pour les rĆ©seaux mobiles de cinquiĆØme gĆ©nĆ©ration etc.).
Such reconfigurable antennas are particularly advantageously from the C band (4-8 GHz) to the D band (110-170 GHz) for the following applications:
  • automotive radars for assistance and assistance with driving, from the perspective of active safety,
  • imaging and surveillance systems with very high resolution,
  • very high-speed millimeter-wave communications systems (inter-building or intra- building communications in a home automation or building automation environment, short-range connection),
  • ground-to-satellite low-orbit telemetry links LEO (for " Low Earth Orbit " in English) in Ka-band, satellite telecommunications with reconfigurable primary source (SOTM ā„¢ for "Satcom-on-the-Move" in English, Internet , Television etc.),
  • point-to-point and point-to-multipoint link systems (metropolitan networks, "Fronthaul " and " Backhaul " systems for cellular networks, radio access for fifth generation mobile networks, etc.).

Etat de la technique antƩrieureState of the art

Une cellule ƩlƩmentaire d'un rƩseau transmetteur pour une antenne reconfigurable, connue de l'Ʃtat de la technique, notamment du document WO 2012/085067 , comporte :

  • une antenne de rĆ©ception, planaire, destinĆ©e Ć  recevoir une onde incidente ;
  • une antenne de transmission, planaire, destinĆ©e Ć  transmettre l'onde incidente avec un dĆ©phasage, et comprenant des premiĆØre et deuxiĆØme surfaces de rayonnement disjointes ;
  • un circuit de dĆ©phasage, configurĆ© pour dĆ©finir un couple d'Ć©tats de phase pour l'onde incidente ; le circuit de dĆ©phasage comprenant des premier et second commutateurs prĆ©sentant respectivement un Ć©tat passant et un Ć©tat bloquĆ©, en alternance ; les Ć©tats passant ou bloquĆ© correspondant Ć  une circulation d'un courant, respectivement autorisĆ©e ou bloquĆ©e, entre les premiĆØre et deuxiĆØme surfaces de rayonnement disjointes de l'antenne de transmission.
An elementary cell of a transmitting network for a reconfigurable antenna, known from the state of the art, particularly from the document WO 2012/085067 , includes:
  • a planar receiving antenna for receiving an incident wave;
  • a planar transmitting antenna for transmitting the incident wave with a phase shift, and comprising disjointed first and second radiation surfaces;
  • a phase shift circuit configured to define a pair of phase states for the incident wave; the phase shift circuit comprising first and second switches respectively having an on state and a blocked state, alternately; the on or off states corresponding to a current flow, respectively allowed or blocked, between the first and second disjoint radiating surfaces of the transmission antenna.

Une telle cellule Ć©lĆ©mentaire de l'Ć©tat de la technique n'est pas entiĆØrement satisfaisante dans la mesure oĆ¹ elle ne peut gĆ©nĆ©rer que deux Ć©tats de phase pour la transmission de l'onde incidente. Les deux Ć©tats de phase sont sĆ©parĆ©s de 180Ā° dans la mesure oĆ¹ les premier et second commutateurs, prĆ©sentant respectivement un Ć©tat passant et un Ć©tat bloquĆ© et commandĆ©s en alternance, excitent l'antenne de transmission en phase ou en opposition de phase avec l'antenne de rĆ©ception. En d'autres termes, la phase de transmission est contrĆ“lĆ©e avec une quantification de 1 bit, c'est-Ć -dire deux Ć©tats de phase Ć  0Ā° ou 180Ā°. Cette quantification sur 1 bit est susceptible de limiter les performances de l'antenne reconfigurable de type rĆ©seau transmetteur, notamment en termes de directivitĆ©, et par consĆ©quent de gain, et de niveau des lobes secondaires (SLL pour Ā« Side Lobe Level Ā» en langue anglaise).Such an elementary cell of the state of the art is not entirely satisfactory insofar as it can only generate two phase states for the transmission of the incident wave. The two phase states are separated by 180 Ā° insofar as the first and second switches, respectively having an on state and a locked state and alternately controlled, excite the transmission antenna in phase or in phase opposition with the receiving antenna. In other words, the transmission phase is controlled with a quantization of 1 bit, that is to say two phase states at 0 Ā° or 180 Ā°. This one-bit quantization is likely to limit the performance of the reconfigurable antenna of the transmitting network type, in particular in terms of directivity, and consequently of gain, and level of the side lobes (SLL for " Side Lobe Level " in English ).

ExposƩ de l'inventionPresentation of the invention

L'invention vise Ơ remƩdier en tout ou partie aux inconvƩnients prƩcitƩs. A cet effet, l'invention a pour objet une cellule ƩlƩmentaire d'un rƩseau transmetteur pour une antenne reconfigurable Ơ une frƩquence de fonctionnement, la cellule ƩlƩmentaire comportant :

  • une antenne de rĆ©ception, planaire, destinĆ©e Ć  recevoir une onde incidente ;
  • une antenne de transmission, planaire, destinĆ©e Ć  transmettre l'onde incidente avec un dĆ©phasage, et comprenant des premiĆØre et deuxiĆØme surfaces de rayonnement disjointes ;
  • un premier circuit de dĆ©phasage, configurĆ© pour dĆ©finir un premier couple d'Ć©tats de phase pour l'onde incidente ; le premier circuit de dĆ©phasage comprenant des premier et second commutateurs prĆ©sentant respectivement un Ć©tat passant et un Ć©tat bloquĆ©, en alternance ; les Ć©tats passant ou bloquĆ© correspondant Ć  une circulation d'un courant, respectivement autorisĆ©e ou bloquĆ©e, entre les premiĆØre et deuxiĆØme surfaces de rayonnement disjointes de l'antenne de transmission ;
la cellule Ć©lĆ©mentaire Ć©tant remarquable en ce que l'antenne de rĆ©ception comprend des premiĆØre et deuxiĆØme surfaces de captation disjointes ; et en ce que la cellule Ć©lĆ©mentaire comporte un deuxiĆØme circuit de dĆ©phasage, configurĆ© pour dĆ©finir un second couple d'Ć©tats de phase pour l'onde incidente ; le deuxiĆØme circuit de dĆ©phasage comprenant des premier et second commutateurs prĆ©sentant respectivement un Ć©tat passant et un Ć©tat bloquĆ©, en alternance ; les Ć©tats passant ou bloquĆ© correspondant Ć  une circulation d'un courant, respectivement autorisĆ©e ou bloquĆ©e, entre les premiĆØre et deuxiĆØme surfaces de captation disjointes de l'antenne de rĆ©ception.The invention aims to remedy all or part of the aforementioned drawbacks. For this purpose, the subject of the invention is an elementary cell of a transmitting network for an antenna reconfigurable at an operating frequency, the elementary cell comprising:
  • a planar receiving antenna for receiving an incident wave;
  • a planar transmitting antenna for transmitting the incident wave with a phase shift, and comprising disjointed first and second radiation surfaces;
  • a first phase shift circuit configured to define a first pair of phase states for the incident wave; the first phase shift circuit comprising first and second switches respectively having an on state and an off state alternately; the on or off states corresponding to a current flow, respectively allowed or blocked, between the first and second disjoint radiating surfaces of the transmitting antenna;
the elementary cell being remarkable in that the receiving antenna comprises disjoint first and second sensing surfaces; and in that the elementary cell comprises a second phase shift circuit, configured to define a second pair of phase states for the incident wave; the second phase shift circuit comprising first and second switches respectively having an on state and a blocked state, alternately; the on or off states corresponding to a current flow, respectively allowed or blocked, between the first and second reception surfaces disjoint from the receiving antenna.

Ainsi, une telle cellule Ć©lĆ©mentaire selon l'invention permet, grĆ¢ce Ć  une telle antenne de rĆ©ception et au deuxiĆØme circuit de dĆ©phasage, d'obtenir un deuxiĆØme couple d'Ć©tats de phase pour la transmission de l'onde incidente. Une telle cellule Ć©lĆ©mentaire peut donc gĆ©nĆ©rer quatre Ć©tats de phase pour la transmission de l'onde incidente. Les Ć©tats de phase au sein de chaque couple sont sĆ©parĆ©s de 180Ā° dans la mesure oĆ¹ les commutateurs des premier et deuxiĆØme circuits de dĆ©phasage excitent l'antenne de transmission (respectivement l'antenne de rĆ©ception) en phase ou en opposition de phase avec l'antenne de rĆ©ception (respectivement l'antenne de transmission). En d'autres termes, la phase de transmission est contrĆ“lĆ©e avec une quantification de 2 bits, et non simplement 1 bit comme dans l'Ć©tat de la technique. Cette quantification sur 2 bits permet d'envisager une amĆ©lioration des performances de l'antenne reconfigurable de type rĆ©seau transmetteur, notamment en termes de directivitĆ©, et par consĆ©quent de gain, et de niveau de lobes secondaires.Thus, such an elementary cell according to the invention makes it possible, thanks to such a reception antenna and to the second phase shift circuit, to obtain a second pair of phase states for the transmission of the incident wave. Such an elementary cell can thus generate four phase states for transmitting the incident wave. The phase states within each pair are separated by 180 Ā° insofar as the switches of the first and second phase shift circuits excite the transmitting antenna (respectively the receiving antenna) in phase or in phase opposition with the receiving antenna (respectively the transmission antenna). In other words, the transmission phase is controlled with a quantization of 2 bits, and not just 1 bit as in the state of the art. This 2-bit quantization makes it possible to envisage an improvement in the performance of the reconfigurable antenna of the transmitting network type, in particular in terms of directivity, and consequently of gain, and of secondary lobe level.

DĆ©finitionsDefinitions

  • Par Ā« disjointesĀ», on entend que les premiĆØre et deuxiĆØme surfaces de rayonnement (et de captation) sont sĆ©parĆ©es entre elles par une zone de sĆ©paration de maniĆØre Ć  ĆŖtre Ć©lectriquement isolĆ©es.By "disjoint" is meant that the first and second radiation (and capture) surfaces are separated from each other by a separation zone so as to be electrically isolated.
  • Par Ā« en alternance Ā», on entend que le premier commutateur alterne entre l'Ć©tat passant et l'Ć©tat bloquĆ©, tandis que, simultanĆ©ment, le second commutateur appartenant au mĆŖme circuit de dĆ©phasage alterne entre l'Ć©tat bloquĆ© et l'Ć©tat passant. En d'autres termes, Ć  tout instant, les premier et second commutateurs appartenant au mĆŖme circuit de dĆ©phasage prĆ©sentent deux Ć©tats opposĆ©s, soit passant/bloquĆ©, soit bloquĆ©/passant. Les Ć©tats passant/passant ou bloquĆ©/bloquĆ© ne sont pas autorisĆ©s.By "alternately" is meant that the first switch alternates between the on state and the off state, while simultaneously the second switch belonging to the same phase shift circuit alternates between the off state and the on state. In other words, at any time, the first and second switches belonging to the same phase shift circuit have two opposite states, either on / off or blocked / on. Passing / blocking / blocked states are not allowed.

La cellule ƩlƩmentaire selon l'invention peut comporter une ou plusieurs des caractƩristiques suivantes.The elementary cell according to the invention may comprise one or more of the following characteristics.

Selon une caractĆ©ristique de l'invention, la cellule Ć©lĆ©mentaire comporte une ligne Ć  retard configurĆ©e de sorte que le second couple d'Ć©tats de phase est dĆ©phasĆ© de 90Ā° par rapport au premier couple d'Ć©tats de phase.According to a characteristic of the invention, the elementary cell comprises a delay line configured so that the second pair of phase states is 90 Ā° out of phase with the first pair of phase states.

Par Ā« ligne Ā», on entend une piste rĆ©alisĆ©e dans un matĆ©riau Ć©lectriquement conducteur.By "line" is meant a track made of an electrically conductive material.

Par Ā« Ć©lectriquement conducteur Ā», on entend que le matĆ©riau prĆ©sente une conductivitĆ© Ć©lectrique Ć  300 K supĆ©rieure Ć  103 S/cm."Electrically conductive" means that the material has an electrical conductivity at 300 K greater than 10 3 S / cm.

Ainsi, un avantage procurĆ© est d'obtenir les quatre Ć©tats de phase suivants : 0Ā°, 90Ā°, 180Ā° et 270Ā°. Ces quatre Ć©tats de phase sont particuliĆØrement avantageux car ils permettent d'amĆ©liorer la capacitĆ© de focalisation du rĆ©seau transmetteur et par consĆ©quent le gain.Thus, a benefit provided is to obtain the following four phase states: 0 Ā°, 90 Ā°, 180 Ā° and 270 Ā°. These four phase states are particularly advantageous because they make it possible to improve the focusing capacity of the transmitting network and consequently the gain.

Selon une caractƩristique de l'invention, la ligne Ơ retard s'Ʃtend Ơ partir de l'antenne de rƩception.According to one characteristic of the invention, the delay line extends from the receiving antenna.

Ainsi, il est prƩfƩrable d'intƩgrer la ligne Ơ retard avec l'antenne de rƩception plutƓt qu'au sein des circuits de dƩphasage. En effet, la ligne Ơ retard prƩsente une longueur adaptƩe au dƩphasage souhaitƩ. En cas de correction ou de modification du dƩphasage souhaitƩ, l'antenne de rƩception demeure facilement accessible pour modifier la ligne Ơ retard, au contraire des circuits de dƩphasage agencƩs au sein de l'architecture de la cellule ƩlƩmentaire.Thus, it is preferable to integrate the delay line with the receiving antenna rather than within the phase shift circuits. Indeed, the delay line has a length adapted to the desired phase shift. In case of correction or modification of the desired phase shift, the receiving antenna remains easily accessible for modifying the delay line, in contrast to the phase shift circuits arranged within the architecture of the elementary cell.

Selon une caractƩristique de l'invention, la cellule ƩlƩmentaire comporte un premier substrat diƩlectrique comprenant :

  • une premiĆØre surface, munie de l'antenne de rĆ©ception ;
  • une seconde surface, opposĆ©e Ć  la premiĆØre surface, et munie de lignes de polarisation agencĆ©es pour polariser les premier et second commutateurs du deuxiĆØme circuit de dĆ©phasage.
According to a characteristic of the invention, the elementary cell comprises a first dielectric substrate comprising:
  • a first surface, provided with the receiving antenna;
  • a second surface, opposite to the first surface, and provided with polarization lines arranged to bias the first and second switches of the second phase shift circuit.

Par Ā« substrat diĆ©lectrique Ā», on entend un substrat rĆ©alisĆ© dans un matĆ©riau prĆ©sentant une conductivitĆ© Ć©lectrique Ć  300 K infĆ©rieure Ć  108 S/cm.By "dielectric substrate" is meant a substrate made of a material having an electrical conductivity at 300 K less than 10 8 S / cm.

Ainsi, un avantage procurƩ est d'autoriser une polarisation des commutateurs avec un encombrement minimal, et sans perturber le diagramme de captation de l'antenne de rƩception.Thus, an advantage provided is to allow a polarization of the switches with minimal space, and without disturbing the reception antenna capture pattern.

Selon une caractĆ©ristique de l'invention, la cellule Ć©lĆ©mentaire comporte un deuxiĆØme substrat diĆ©lectrique comprenant :

  • une premiĆØre surface, munie d'un plan de masse ;
  • une seconde surface, opposĆ©e Ć  la premiĆØre surface.
According to one characteristic of the invention, the elementary cell comprises a second dielectric substrate comprising:
  • a first surface, provided with a ground plane;
  • a second surface, opposite to the first surface.

Ainsi, un avantage procurƩ par le plan de masse est de former un blindage ƩlectromagnƩtique entre l'antenne de rƩception et l'antenne de transmission.Thus, an advantage provided by the ground plane is to form an electromagnetic shield between the receiving antenna and the transmitting antenna.

Selon une caractĆ©ristique de l'invention, la seconde surface du deuxiĆØme substrat diĆ©lectrique est munie de lignes quart d'onde Ć©lectriquement connectĆ©es au plan de masse.According to one characteristic of the invention, the second surface of the second dielectric substrate is provided with quarter-wave lines electrically connected to the ground plane.

Par Ā« ligne quart d'onde Ā», on entend une ligne possĆ©dant une longueur Ć©gale au quart de la longueur d'onde de fonctionnement de l'antenne.By "quarter wave line" is meant a line having a length equal to one quarter of the operating wavelength of the antenna.

Ainsi, un avantage procurƩ par de telles lignes est de former un circuit ouvert (impƩdance tend vers l'infini) Ơ la frƩquence de fonctionnement.Thus, an advantage provided by such lines is to form an open circuit (impedance tends to infinity) at the operating frequency.

Selon une caractĆ©ristique de l'invention, la cellule Ć©lĆ©mentaire comporte un premier film de collage agencĆ© pour coller la seconde surface du deuxiĆØme substrat diĆ©lectrique sur la seconde surface du premier substrat diĆ©lectrique.According to a characteristic of the invention, the elementary cell comprises a first bonding film arranged to bond the second surface of the second dielectric substrate to the second surface of the first dielectric substrate.

Ainsi, un avantage procurĆ© par un tel film de collage est de pouvoir solidariser les premier et deuxiĆØme substrats diĆ©lectriques avec un encombrement minimal.Thus, an advantage provided by such a bonding film is to be able to join the first and second dielectric substrates with a minimum bulk.

Selon une caractĆ©ristique de l'invention, la cellule Ć©lĆ©mentaire comporte un troisiĆØme substrat diĆ©lectrique comprenant :

  • une premiĆØre surface, munie de l'antenne de transmission ;
  • une seconde surface, opposĆ©e Ć  la premiĆØre surface, et munie de lignes de polarisation agencĆ©es pour polariser les premier et second commutateurs du premier circuit de dĆ©phasage.
According to one characteristic of the invention, the elementary cell comprises a third dielectric substrate comprising:
  • a first surface, provided with the transmission antenna;
  • a second surface, opposite to the first surface, and provided with polarization lines arranged to bias the first and second switches of the first phase shift circuit.

Ainsi, un avantage procurƩ est d'autoriser une polarisation des commutateurs avec un encombrement minimal, et sans perturber le diagramme de rayonnement de l'antenne de transmission.Thus, an advantage provided is to allow a polarization of the switches with minimal space, and without disturbing the radiation pattern of the transmission antenna.

Selon une caractĆ©ristique de l'invention, la cellule Ć©lĆ©mentaire comporte un second film de collage agencĆ© pour coller la seconde surface du troisiĆØme substrat diĆ©lectrique sur la premiĆØre surface du deuxiĆØme substrat diĆ©lectrique.According to a characteristic of the invention, the elementary cell comprises a second bonding film arranged to bond the second surface of the third dielectric substrate to the first surface of the second dielectric substrate.

Ainsi, un avantage procurĆ© par un tel film de collage est de pouvoir solidariser les deuxiĆØme et troisiĆØme substrats diĆ©lectriques avec un encombrement minimal.Thus, an advantage provided by such a bonding film is to be able to secure the second and third dielectric substrates with a minimum bulk.

Selon une caractĆ©ristique de l'invention, la cellule Ć©lĆ©mentaire comporte un trou d'interconnexion principal, agencĆ© pour connecter Ć©lectriquement l'antenne de rĆ©ception et l'antenne de transmission ; le trou d'interconnexion principal traversant les premier, deuxiĆØme, et troisiĆØme substrats diĆ©lectriques ainsi que les premier et second films de collage ; le trou d'interconnexion principal Ć©tant Ć©lectriquement isolĆ© du plan de masse ; le trou d'interconnexion principal Ć©tant connectĆ© aux lignes quart d'onde.According to a characteristic of the invention, the elementary cell comprises a main interconnection hole, arranged to electrically connect the receiving antenna and the transmission antenna; the main via through the first, second, and third dielectric substrates as well as the first and second bonding films; the main interconnection hole being electrically insulated from the ground plane; the main interconnection hole being connected to the quarter wave lines.

L'invention a Ʃgalement pour objet une antenne reconfigurable Ơ une frƩquence de fonctionnement, comportant un rƩseau transmetteur comprenant un ensemble de cellules ƩlƩmentaires conformes Ơ l'invention.The invention also relates to a reconfigurable antenna at an operating frequency, comprising a transmitter network comprising a set of elementary cells according to the invention.

BrĆØve description des dessinsBrief description of the drawings

D'autres caractƩristiques et avantages apparaƮtront dans l'exposƩ dƩtaillƩ de diffƩrents modes de rƩalisation de l'invention, l'exposƩ Ʃtant assorti d'exemples et de rƩfƩrence aux dessins joints.

  • Figure 1 est une vue schĆ©matique d'une antenne reconfigurable Ć  rĆ©seau transmetteur.
  • Figure 2 est une vue schĆ©matique en coupe d'une cellule Ć©lĆ©mentaire selon l'invention.
  • Figure 3 est une vue schĆ©matique en perspective Ć©clatĆ©e et en transparence d'une cellule Ć©lĆ©mentaire selon l'invention.
  • Figure 4 est une vue schĆ©matique partielle, de dessus, d'une cellule Ć©lĆ©mentaire selon l'invention, illustrant la premiĆØre surface du deuxiĆØme substrat diĆ©lectrique munie d'un plan de masse.
  • Figure 5 est une vue schĆ©matique partielle, de dessus, d'une cellule Ć©lĆ©mentaire selon l'invention, illustrant la seconde surface du deuxiĆØme substrat diĆ©lectrique munie de lignes quart d'onde.
  • Figure 6 est une vue schĆ©matique partielle, de dessus, d'une cellule Ć©lĆ©mentaire selon l'invention, illustrant la seconde surface du premier substrat diĆ©lectrique munie de lignes de polarisation des commutateurs.
  • Figure 7 est une vue schĆ©matique partielle, de dessus, d'une cellule Ć©lĆ©mentaire selon l'invention, illustrant la premiĆØre surface du premier substrat diĆ©lectrique munie d'une antenne de rĆ©ception.
Other features and advantages will become apparent in the detailed discussion of various embodiments of the invention, the disclosure being accompanied by examples and reference to the accompanying drawings.
  • Figure 1 is a schematic view of a reconfigurable antenna with a transmitter network.
  • Figure 2 is a schematic sectional view of an elementary cell according to the invention.
  • Figure 3 is a schematic perspective exploded and transparent view of an elementary cell according to the invention.
  • Figure 4 is a partial schematic view, from above, of an elementary cell according to the invention, illustrating the first surface of the second dielectric substrate provided with a ground plane.
  • Figure 5 is a partial schematic view, from above, of an elementary cell according to the invention, illustrating the second surface of the second dielectric substrate provided with quarter-wave lines.
  • Figure 6 is a partial schematic view, from above, of an elementary cell according to the invention, illustrating the second surface of the first dielectric substrate provided with polarization lines of the switches.
  • Figure 7 is a partial schematic view, from above, of an elementary cell according to the invention, illustrating the first surface of the first dielectric substrate provided with a receiving antenna.

ExposƩ dƩtaillƩ des modes de rƩalisationDetailed description of the embodiments

Les Ć©lĆ©ments identiques ou assurant la mĆŖme fonction porteront les mĆŖmes rĆ©fĆ©rences pour les diffĆ©rents modes de rĆ©alisation, par souci de simplification.The identical elements or ensuring the same function will bear the same references for the various embodiments, for the sake of simplification.

Un objet de l'invention est une cellule ƩlƩmentaire 1 d'un rƩseau transmetteur RT pour une antenne reconfigurable Ơ une frƩquence de fonctionnement, la cellule ƩlƩmentaire 1 comportant :

  • une antenne de rĆ©ception 2, planaire, destinĆ©e Ć  recevoir une onde incidente Ei ;
  • une antenne de transmission 3, planaire, destinĆ©e Ć  transmettre l'onde incidente Ei avec un dĆ©phasage (l'onde transmise Et dĆ©phasĆ©e Ć©tant illustrĆ©e Ć  la figure 1), et comprenant des premiĆØre et deuxiĆØme surfaces de rayonnement 30, 31 disjointes ;
  • un premier circuit de dĆ©phasage 4, configurĆ© pour dĆ©finir un premier couple d'Ć©tats de phase pour l'onde incidente Ei ; le premier circuit de dĆ©phasage 4 comprenant des premier et second commutateurs 40, 41 prĆ©sentant respectivement un Ć©tat passant et un Ć©tat bloquĆ©, en alternance ; les Ć©tats passant ou bloquĆ© correspondant Ć  une circulation d'un courant, respectivement autorisĆ©e ou bloquĆ©e, entre les premiĆØre et deuxiĆØme surfaces de rayonnement 30, 31 disjointes de l'antenne de transmission 3 ;
la cellule Ć©lĆ©mentaire 1 Ć©tant remarquable en ce que l'antenne de rĆ©ception 2 comprend des premiĆØre et deuxiĆØme surfaces de captation 20, 21 disjointes ; et en ce que la cellule Ć©lĆ©mentaire 1 comporte un deuxiĆØme circuit de dĆ©phasage 5, configurĆ© pour dĆ©finir un second couple d'Ć©tats de phase pour l'onde incidente Ei ; le deuxiĆØme circuit de dĆ©phasage 5 comprenant des premier et second commutateurs 50, 51 prĆ©sentant respectivement un Ć©tat passant et un Ć©tat bloquĆ©, en alternance ; les Ć©tats passant ou bloquĆ© correspondant Ć  une circulation d'un courant, respectivement autorisĆ©e ou bloquĆ©e, entre les premiĆØre et deuxiĆØme surfaces de captation 20, 21 disjointes de l'antenne de rĆ©ception 2.An object of the invention is an elementary cell 1 of a transmitting network RT for a reconfigurable antenna at an operating frequency, the elementary cell 1 comprising:
  • a planar receiving antenna 2 for receiving an incident wave E i ;
  • a planar transmission antenna 3 for transmitting the incident wave E i with a phase shift (the transmitted wave E t out of phase being illustrated in FIG. figure 1 ), and comprising first and second radiating surfaces 30, 31 disjoined;
  • a first phase shift circuit 4, configured to define a first pair of phase states for the incident wave E i ; the first phase shift circuit 4 comprising first and second switches 40, 41 respectively having an on state and a blocked state, alternately; the passing states or blocked corresponding to a current flow, respectively allowed or blocked, between the first and second radiated surfaces 30, 31 disjoint from the transmission antenna 3;
the elementary cell 1 being remarkable in that the receiving antenna 2 comprises first and second sensing surfaces 20, 21 disjoined; and in that the elementary cell 1 comprises a second phase shift circuit 5, configured to define a second pair of phase states for the incident wave E i ; the second phase shift circuit 5 comprising first and second switches 50, 51 respectively having an on state and a blocked state, alternately; the passing states or blocked corresponding to a current flow, respectively allowed or blocked, between the first and second capture surfaces 20, 21 disjoint from the receiving antenna 2.

Antenne de rƩceptionReceiving antenna

La cellule ƩlƩmentaire 1 comporte avantageusement un premier substrat diƩlectrique 6 comprenant :

  • une premiĆØre surface 60, munie de l'antenne de rĆ©ception 2 ;
  • une seconde surface 61, opposĆ©e Ć  la premiĆØre surface 60, et munie de lignes de polarisation 610 agencĆ©es pour polariser les premier et second commutateurs 50, 51 du deuxiĆØme circuit de dĆ©phasage 5.
The elementary cell 1 advantageously comprises a first dielectric substrate 6 comprising:
  • a first surface 60, provided with the receiving antenna 2;
  • a second surface 61, opposite to the first surface 60, and provided with polarization lines 610 arranged to bias the first and second switches 50, 51 of the second phase shift circuit 5.

A titre d'exemple non limitatif, le premier substrat diĆ©lectrique 6 peut prĆ©senter une Ć©paisseur de l'ordre de 254 Āµm lorsque la frĆ©quence de fonctionnement est 29 GHz. A titre d'exemple non limitatif, le premier substrat diĆ©lectrique 6 peut ĆŖtre rĆ©alisĆ© dans un matĆ©riau commercial tel que le RT/duroidĀ® 6002.By way of non-limiting example, the first dielectric substrate 6 may have a thickness of about 254 microns when the operating frequency is 29 GHz. By way of non-limiting example, the first dielectric substrate 6 may be made of a commercial material such as RT / duroidĀ® 6002.

L'antenne de rĆ©ception 2 est une antenne planaire (Ā«patchĀ» en langue anglaise). Les premiĆØre et deuxiĆØme surfaces de captation 20, 21 sont agencĆ©es pour capter l'onde incidente Ei. Les premiĆØre et deuxiĆØme surfaces de captation 20, 21 sont disjointes au sens oĆ¹ elles sont sĆ©parĆ©es entre elles par une zone de sĆ©paration ZS1 de maniĆØre Ć  ĆŖtre Ć©lectriquement isolĆ©es entre elles. A cet effet, une fente est avantageusement mĆ©nagĆ©e dans l'antenne de rĆ©ception 2 pour isoler Ć©lectriquement les premiĆØre et deuxiĆØme surfaces de captation 20, 21. La fente dĆ©finit la zone de sĆ©paration ZS1. La fente est prĆ©fĆ©rentiellement annulaire, Ć  section rectangulaire. Bien entendu, d'autres formes sont envisageables pour la fente, telles qu'une forme elliptique ou circulaire. Selon une variante d'exĆ©cution, l'isolation Ć©lectrique des premiĆØre et deuxiĆØme surfaces de captation 20, 21 peut ĆŖtre assurĆ©e par un matĆ©riau diĆ©lectrique.The receiving antenna 2 is a planar antenna (" patch " in English). The first and second capture surfaces 20, 21 are arranged to capture the incident wave E i . The first and second capture surfaces 20, 21 are disjoint in the sense that they are separated from each other by a separation zone ZS1 so as to be electrically isolated from each other. For this purpose, a slot is advantageously formed in the receiving antenna 2 to electrically isolate the first and second capture surfaces 20, 21. The slot defines the separation zone ZS1. The slot is preferably annular, rectangular section. Of course, other shapes are conceivable for the slot, such as an elliptical or circular shape. According to an alternative embodiment, the electrical insulation of the first and second capture surfaces 20, 21 may be provided by a dielectric material.

Les premiĆØre et deuxiĆØme surfaces de captation 20, 21 prĆ©sentent avantageusement un axe de symĆ©trie afin de ne pas dĆ©grader la polarisation de l'onde incidente Ei. La premiĆØre surface de captation 20 forme prĆ©fĆ©rentiellement un anneau Ć  section rectangulaire. La deuxiĆØme surface de captation 21 forme prĆ©fĆ©rentiellement une bande rectangulaire. La deuxiĆØme surface de captation 21 est avantageusement circonscrite par la premiĆØre surface de captation 20 afin d'Ć©viter la formation de courants parasites. Les premiĆØre et deuxiĆØme surfaces de captation 20, 21 sont prĆ©fĆ©rentiellement rĆ©alisĆ©es dans un matĆ©riau mĆ©tallique, plus prĆ©fĆ©rentiellement le cuivre. Des surfaces de captation additionnelles peuvent ĆŖtre avantageusement empilĆ©es sur les premiĆØre et deuxiĆØme surfaces de captation 20, 21 afin d'augmenter la bande passante de l'antenne de rĆ©ception 2.The first and second capture surfaces 20, 21 advantageously have an axis of symmetry so as not to degrade the polarization of the incident wave E i . The first capture surface 20 preferentially forms a ring with a rectangular section. The second capture surface 21 preferentially forms a rectangular band. The second capture surface 21 is advantageously circumscribed by the first capture surface 20 in order to avoid the formation of parasitic currents. The first and second capture surfaces 20, 21 are preferably made of a metallic material, more preferably copper. Additional capture surfaces may advantageously be stacked on the first and second capture surfaces 20, 21 in order to increase the bandwidth of the reception antenna 2.

La cellule Ć©lĆ©mentaire 1 comporte avantageusement une ligne Ć  retard LR configurĆ©e de sorte que le second couple d'Ć©tats de phase est dĆ©phasĆ© de 90Ā° par rapport au premier couple d'Ć©tats de phase. Pour ce faire, la ligne Ć  retard LR prĆ©sente une longueur adaptĆ©e de sorte que le second couple d'Ć©tats de phase est dĆ©phasĆ© de 90Ā° par rapport au premier couple d'Ć©tats de phase. La ligne Ć  retard LR s'Ć©tend avantageusement Ć  partir de l'antenne de rĆ©ception 2. Plus prĆ©cisĆ©ment, comme illustrĆ© Ć  la figure 3, la ligne Ć  retard LR s'Ć©tend Ć  partir de la premiĆØre surface de captation 20 de l'antenne de rĆ©ception 2. La ligne Ć  retard LR est prĆ©fĆ©rentiellement rĆ©alisĆ©e dans un matĆ©riau mĆ©tallique, plus prĆ©fĆ©rentiellement le cuivre.The elementary cell 1 advantageously comprises a delay line LR configured so that the second pair of phase states is phase shifted by 90 Ā° with respect to the first pair phase states. To do this, the delay line LR has a length adapted so that the second pair of phase states is out of phase by 90 Ā° with respect to the first pair of phase states. The delay line LR advantageously extends from the reception antenna 2. More precisely, as illustrated in FIG. figure 3 , the delay line LR extends from the first pick-up surface 20 of the receiving antenna 2. The delay line LR is preferably made of a metallic material, more preferably copper.

Plan de masseMass Plan

La cellule Ć©lĆ©mentaire 1 comporte avantageusement un deuxiĆØme substrat diĆ©lectrique 7 comprenant :

  • une premiĆØre surface 70, munie d'un plan de masse PM ;
  • une seconde surface 71, opposĆ©e Ć  la premiĆØre surface 70.
The elementary cell 1 advantageously comprises a second dielectric substrate 7 comprising:
  • a first surface 70, provided with a ground plane PM;
  • a second surface 71, opposite the first surface 70.

A titre d'exemple non limitatif, le deuxiĆØme substrat diĆ©lectrique 7 peut prĆ©senter une Ć©paisseur de l'ordre de 254 Āµm lorsque la frĆ©quence de fonctionnement est 29 GHz. A titre d'exemple non limitatif, le deuxiĆØme substrat diĆ©lectrique 7 peut ĆŖtre rĆ©alisĆ© dans un matĆ©riau commercial tel que le RT/duroidĀ® 6002.By way of non-limiting example, the second dielectric substrate 7 may have a thickness of the order of 254 microns when the operating frequency is 29 GHz. By way of non-limiting example, the second dielectric substrate 7 may be made of a commercial material such as RT / duroidĀ® 6002.

Le plan de masse PM est prĆ©fĆ©rentiellement rĆ©alisĆ© dans un matĆ©riau mĆ©tallique, plus prĆ©fĆ©rentiellement le cuivre. A titre d'exemple non limitatif, le plan de masse PM peut prĆ©senter une Ć©paisseur de l'ordre de 17 Āµm lorsque la frĆ©quence de fonctionnement est 29 GHz.The mass plane PM is preferably made of a metallic material, more preferably copper. By way of non-limiting example, the ground plane PM may have a thickness of the order of 17 Ī¼m when the operating frequency is 29 GHz.

La seconde surface 71 du deuxiĆØme substrat diĆ©lectrique 7 est avantageusement munie de lignes quart d'onde 710 Ć©lectriquement connectĆ©es au plan de masse PM par l'intermĆ©diaire d'un trou d'interconnexion 711 traversant le deuxiĆØme substrat diĆ©lectrique 7. Les lignes quart d'onde 710 sont prĆ©fĆ©rentiellement rĆ©alisĆ©es dans un matĆ©riau mĆ©tallique, plus prĆ©fĆ©rentiellement le cuivre.The second surface 71 of the second dielectric substrate 7 is advantageously provided with quarter-wave lines 710 electrically connected to the ground plane PM via a via 711 passing through the second dielectric substrate 7. Wave 710 is preferably made of a metallic material, more preferably copper.

Antenne de transmissionTransmission antenna

La cellule Ć©lĆ©mentaire 1 comporte avantageusement un troisiĆØme substrat diĆ©lectrique 8 comprenant :

  • une premiĆØre surface 80, munie de l'antenne de transmission 3 ;
  • une seconde surface 81, opposĆ©e Ć  la premiĆØre surface 80, et munie de lignes de polarisation 810 agencĆ©es pour polariser les premier et second commutateurs 40, 41 du premier circuit de dĆ©phasage 4.
The elementary cell 1 advantageously comprises a third dielectric substrate 8 comprising:
  • a first surface 80, provided with the transmission antenna 3;
  • a second surface 81, opposite the first surface 80, and provided with polarization lines 810 arranged to bias the first and second switches 40, 41 of the first phase shift circuit 4.

A titre d'exemple non limitatif, le troisiĆØme substrat diĆ©lectrique 8 peut prĆ©senter une Ć©paisseur de l'ordre de 508 Āµm lorsque la frĆ©quence de fonctionnement est 29 GHz. A titre d'exemple non limitatif, le troisiĆØme substrat diĆ©lectrique 8 peut ĆŖtre rĆ©alisĆ© dans un matĆ©riau commercial tel que le RT/duroidĀ® 6002.By way of nonlimiting example, the third dielectric substrate 8 may have a thickness of the order of 508 microns when the operating frequency is 29 GHz. As of non-limiting example, the third dielectric substrate 8 may be made of a commercial material such as RT / duroidĀ® 6002.

L'antenne de transmission 3 est une antenne planaire (Ā« patch Ā» en langue anglaise). Les premiĆØre et deuxiĆØme surfaces de rayonnement 30, 31 sont disjointes au sens oĆ¹ elles sont sĆ©parĆ©es entre elles par une zone de sĆ©paration ZS2 de maniĆØre Ć  ĆŖtre Ć©lectriquement isolĆ©es entre elles. A cet effet, une fente est avantageusement mĆ©nagĆ©e dans l'antenne de transmission 3 pour isoler Ć©lectriquement les premiĆØre et deuxiĆØme surfaces de rayonnement 30, 31. La fente dĆ©finit la zone de sĆ©paration ZS2. La fente est prĆ©fĆ©rentiellement annulaire, Ć  section rectangulaire. Bien entendu, d'autres formes sont envisageables pour la fente, telles qu'une forme elliptique ou circulaire. Selon une variante d'exĆ©cution, l'isolation Ć©lectrique des premiĆØre et deuxiĆØme surfaces de rayonnement 30, 31 peut ĆŖtre assurĆ©e par un matĆ©riau diĆ©lectrique.The transmission antenna 3 is a planar antenna (" patch " in English). The first and second radiation surfaces 30, 31 are disjoint in the sense that they are separated from each other by a separation zone ZS2 so as to be electrically isolated from each other. For this purpose, a slot is advantageously formed in the transmission antenna 3 to electrically isolate the first and second radiation surfaces 30, 31. The slot defines the separation zone ZS2. The slot is preferably annular, rectangular section. Of course, other shapes are conceivable for the slot, such as an elliptical or circular shape. According to an alternative embodiment, the electrical insulation of the first and second radiation surfaces 30, 31 may be provided by a dielectric material.

Les premiĆØre et deuxiĆØme surfaces de rayonnement 30, 31 prĆ©sentent avantageusement un axe de symĆ©trie afin de ne pas dĆ©grader la polarisation de l'onde transmise Et par l'antenne de transmission 3 en minimisant l'excitation de modes de rĆ©sonance non dĆ©sirĆ©s. La premiĆØre surface de rayonnement 30 forme prĆ©fĆ©rentiellement un anneau Ć  section rectangulaire. La deuxiĆØme surface de rayonnement 31 forme prĆ©fĆ©rentiellement une bande rectangulaire. La deuxiĆØme surface de rayonnement 31 est avantageusement circonscrite par la premiĆØre surface de rayonnement 30 afin d'Ć©viter la formation de courants parasites. Les premiĆØre et deuxiĆØme surfaces de rayonnement 30, 31 sont prĆ©fĆ©rentiellement rĆ©alisĆ©es dans un matĆ©riau mĆ©tallique, plus prĆ©fĆ©rentiellement le cuivre. Des surfaces de rayonnement additionnelles peuvent ĆŖtre avantageusement empilĆ©es sur les premiĆØre et deuxiĆØme surfaces de rayonnement 30, 31 afin d'augmenter la bande passante de l'antenne de transmission 3.The first and second radiation surfaces 30, 31 advantageously have an axis of symmetry so as not to degrade the polarization of the transmitted wave E t by the transmission antenna 3 by minimizing the excitation of unwanted resonance modes. The first radiation surface 30 preferentially forms a ring with a rectangular section. The second radiation surface 31 preferentially forms a rectangular band. The second radiation surface 31 is advantageously circumscribed by the first radiation surface 30 in order to avoid the formation of parasitic currents. The first and second radiation surfaces 30, 31 are preferably made of a metallic material, more preferably copper. Additional radiation surfaces may advantageously be stacked on the first and second radiation surfaces 30, 31 in order to increase the bandwidth of the transmission antenna 3.

L'antenne de rĆ©ception 2 et l'antenne de transmission 3 peuvent avantageusement ĆŖtre orientĆ©es l'une par rapport Ć  l'autre de maniĆØre Ć  modifier la polarisation de l'onde incidente Ei. Ainsi, une rotation de l'antenne de transmission 3 de 90Ā° relativement Ć  l'antenne de rĆ©ception 2 permet de passer, par exemple, d'une polarisation verticale de l'onde incidente Ei Ć  une polarisation horizontale de l'onde transmise Et.The reception antenna 2 and the transmission antenna 3 may advantageously be oriented relative to one another so as to modify the polarization of the incident wave E i . Thus, a rotation of the transmission antenna 3 of 90 Ā° relative to the receiving antenna 2 makes it possible, for example, to pass from a vertical polarization of the incident wave E i to a horizontal polarization of the transmitted wave. E t .

Circuits de dƩphasagePhase shift circuits

Le premier circuit de dĆ©phasage 4 comporte des lignes de polarisation 810 agencĆ©es pour polariser les premier et second commutateurs 40, 41. Les lignes de polarisation 810 sont des pistes Ć©lectriquement conductrices, formant des moyens de commande des premier et second commutateurs 40, 41. Les lignes de polarisation 810 sont prĆ©fĆ©rentiellement rĆ©alisĆ©es dans un matĆ©riau mĆ©tallique, plus prĆ©fĆ©rentiellement le cuivre. Comme Ć©voquĆ© prĆ©cĆ©demment, les lignes de polarisation 810 du premier circuit de dĆ©phasage 4 sont avantageusement agencĆ©es Ć  la seconde surface 81 du troisiĆØme substrat diĆ©lectrique 8. Les lignes de polarisation 810 du premier circuit de dĆ©phasage 4 sont Ć©lectriquement connectĆ©es Ć  l'antenne de transmission 3, plus prĆ©cisĆ©ment Ć  la premiĆØre surface de rayonnement 30 de l'antenne de transmission 3, par l'intermĆ©diaire d'un trou d'interconnexion 811 traversant le troisiĆØme substrat diĆ©lectrique 8. Comme illustrĆ© Ć  la figure 3, les lignes de polarisation 810 du premier circuit de dĆ©phasage 4 peuvent ĆŖtre reliĆ©es Ć  des plots de contact ou circuits de dĆ©couplage 812. Les plots de contact ou circuits de dĆ©couplage 812 sont prĆ©fĆ©rentiellement rĆ©alisĆ©s dans un matĆ©riau mĆ©tallique, plus prĆ©fĆ©rentiellement le cuivre.The first phase shift circuit 4 comprises polarization lines 810 arranged to bias the first and second switches 40, 41. The polarization lines 810 are electrically conductive tracks, forming control means of the first and second switches 40, 41. Polarization lines 810 are preferably made of a metallic material, more preferably copper. As mentioned above, polarization lines 810 of the first phase shift circuit 4 are advantageously arranged at the second surface 81 of the third dielectric substrate 8. The polarization lines 810 of the first phase shift circuit 4 are electrically connected to the transmission antenna 3, more precisely to the first radiating surface 30 of the transmission antenna 3, via a via 811 passing through the third dielectric substrate 8. As illustrated in FIG. figure 3 , the polarization lines 810 of the first phase shift circuit 4 may be connected to contact pads or decoupling circuits 812. The contact pads or decoupling circuits 812 are preferably made of a metallic material, more preferably copper.

De la mĆŖme faƧon, le deuxiĆØme circuit de dĆ©phasage 5 comporte des lignes de polarisation 610 agencĆ©es pour polariser les premier et second commutateurs 50, 51. Les lignes de polarisation 610 sont des pistes Ć©lectriquement conductrices, formant des moyens de commande des premier et second commutateurs 50, 51. Les lignes de polarisation 610 sont prĆ©fĆ©rentiellement rĆ©alisĆ©es dans un matĆ©riau mĆ©tallique, plus prĆ©fĆ©rentiellement le cuivre. Comme Ć©voquĆ© prĆ©cĆ©demment, les lignes de polarisation 610 du deuxiĆØme circuit de dĆ©phasage 5 sont avantageusement agencĆ©es Ć  la seconde surface 61 du premier substrat diĆ©lectrique 6. Les lignes de polarisation 610 du deuxiĆØme circuit de dĆ©phasage 5 sont Ć©lectriquement connectĆ©es Ć  l'antenne de rĆ©ception 2, plus prĆ©cisĆ©ment Ć  la premiĆØre surface de captation 20 de l'antenne de rĆ©ception 2, par l'intermĆ©diaire d'un trou d'interconnexion 611 traversant le premier substrat diĆ©lectrique 6. Comme illustrĆ© aux figures 3 et 6, les lignes de polarisation 610 du deuxiĆØme circuit de dĆ©phasage sont avantageusement reliĆ©es Ć  des circuits de dĆ©couplage 612. Les circuits de dĆ©couplage 612 sont prĆ©fĆ©rentiellement rĆ©alisĆ©s dans un matĆ©riau mĆ©tallique, plus prĆ©fĆ©rentiellement le cuivre.Similarly, the second phase shift circuit 5 comprises polarization lines 610 arranged to bias the first and second switches 50, 51. The polarization lines 610 are electrically conductive tracks, forming means for controlling the first and second switches. 50, 51. The polarization lines 610 are preferably made of a metallic material, more preferably copper. As mentioned above, the polarization lines 610 of the second phase shift circuit 5 are advantageously arranged at the second surface 61 of the first dielectric substrate 6. The polarization lines 610 of the second phase shift circuit 5 are electrically connected to the reception antenna 2 , more precisely to the first capture surface 20 of the receiving antenna 2, via a via 611 passing through the first dielectric substrate 6. As illustrated in FIGS. Figures 3 and 6 , the polarization lines 610 of the second phase shift circuit are advantageously connected to decoupling circuits 612. The decoupling circuits 612 are preferably made of a metallic material, more preferably copper.

Les premier et second commutateurs 40, 41 du premier circuit de dĆ©phasage 4 peuvent s'Ć©tendre sur les premiĆØre et deuxiĆØme surfaces de rayonnement 30, 31 de l'antenne de transmission 3. A titre de variante, les premier et second commutateurs 40, 41 du premier circuit de dĆ©phasage 4 peuvent ĆŖtre formĆ©s Ć  la premiĆØre surface 80 du troisiĆØme substrat diĆ©lectrique 8, dans la zone de sĆ©paration ZS2 des premiĆØre et deuxiĆØme surfaces de rayonnement 30, 31 de l'antenne de transmission 3. Les premier et second commutateurs 40, 41 du premier circuit de dĆ©phasage 4 sont avantageusement formĆ©s Ć  la premiĆØre surface 80 du troisiĆØme substrat diĆ©lectrique 8, dans la zone de sĆ©paration ZS2, de maniĆØre monolithique avec l'antenne de transmission 3. Par Ā« monolithique Ā», on entend que l'antenne de transmission 3 et les premier et second commutateurs 40, 41 du premier circuit de dĆ©phasage 4 partagent un unique substrat, en l'espĆØce le troisiĆØme substrat diĆ©lectrique 8. Les premier et second commutateurs 50, 51 du deuxiĆØme circuit de dĆ©phasage 5 peuvent s'Ć©tendre sur les premiĆØre et deuxiĆØme surfaces de captation 20, 21 de l'antenne de rĆ©ception 2. A titre de variante, les premier et second commutateurs 50, 51 du deuxiĆØme circuit de dĆ©phasage 5 peuvent ĆŖtre formĆ©s Ć  la premiĆØre surface 60 du premier substrat diĆ©lectrique 6, dans la zone de sĆ©paration ZS1 des premiĆØre et deuxiĆØme surfaces de captation 20, 21 de l'antenne de rĆ©ception 2. Les premier et second commutateurs 50, 51 du deuxiĆØme circuit de dĆ©phasage 5 sont avantageusement formĆ©s Ć  la premiĆØre surface 60 du premier substrat diĆ©lectrique 6, dans la zone de sĆ©paration ZS1, de maniĆØre monolithique avec l'antenne de rĆ©ception 2. Par Ā« monolithique Ā», on entend que l'antenne de rĆ©ception 2 et les premier et second commutateurs 50, 51 du deuxiĆØme circuit de dĆ©phasage 5 partagent un unique substrat, en l'espĆØce le premier substrat diĆ©lectrique 6.The first and second switches 40, 41 of the first phase shift circuit 4 may extend over the first and second radiating surfaces 30, 31 of the transmission antenna 3. Alternatively, the first and second switches 40, 41 of the first phase shift circuit 4 may be formed at the first surface 80 of the third dielectric substrate 8, in the separation zone ZS2 of the first and second radiating surfaces 30, 31 of the transmission antenna 3. The first and second switches 40 , 41 of the first phase shift circuit 4 are advantageously formed at the first surface 80 of the third dielectric substrate 8, in the separation zone ZS2, in a monolithic manner with the transmission antenna 3. By "monolithic" is meant that the transmission antenna 3 and the first and second switches 40, 41 of the first phase shift circuit 4 share a single substrate, in this case the third dielectric substrate 8. first and second switches 50, 51 of the second phase shift circuit 5 can extend over the first and second capture surfaces 20, 21 of the receiving antenna 2. Alternatively, the first and second switches 50, 51 of the second phase shift circuit 5 may be formed at the first surface 60 of the first dielectric substrate 6, in the separation zone ZS1 of the first and second capture surfaces 20, 21 of the reception antenna 2. The first and second switches 50, 51 of the second phase-shift circuit 5 are advantageously formed at the first surface 60 of the first dielectric substrate 6, in the separation zone ZS1, monolithically with the receiving antenna 2. By "monolithic" is meant that the receiving antenna 2 and the first and second switches 50, 51 of the second phase shift circuit 5 share a single substrate, in this case the first dielectric substrate 6.

A titre d'exemples non limitatifs, les premier et second commutateurs 40, 41 ; 50, 51 des premier et deuxiĆØme circuits de dĆ©phasage 4, 5 peuvent ĆŖtre des diodes de type p-i-n, des MEMS (Ā« Micro Electro-Mechanical Systems Ā» en langue anglaise), des NEMS (Ā« Nano Electro-Mechanical Systems Ā» en langue anglaise). Les diodes de type p-i-n peuvent ĆŖtre rĆ©alisĆ©es en AlGaAs.By way of nonlimiting examples, the first and second switches 40, 41; 50, 51 of the first and second phase shift circuits 4, 5 may be pin-type diodes, MEMS (" Micro Electro-Mechanical Systems " in English), NEMS (" Nano Electro-Mechanical Systems " in English). . The pin-type diodes can be made of AlGaAs.

D'autres formes d'exĆ©cution sont envisageables pour les commutateurs. A titre d'exemples non limitatifs, des commutateurs radiofrĆ©quence de type diodes, transistors, photodiodes, phototransistor sont possibles. Le choix d'un dispositif pour commander les commutateurs dĆ©pend de la technologie choisie. A titre d'exemples, les dispositifs suivants peuvent ĆŖtre utilisĆ©s :

  • une fibre optique pour un commutateur de type photoĆ©lectrique,
  • un faisceau laser gĆ©nĆ©rĆ© par des moyens extĆ©rieurs et excitant un commutateur de type photoĆ©lectrique,
  • une onde Ć©lectromagnĆ©tique selon les principes de la tĆ©lĆ©-alimentation connus du domaine de la RFID (Ā« Radio Frequency Identification Ā» en langue anglaise).
Other embodiments are possible for the switches. By way of nonlimiting examples, radio frequency switches of the diode type, transistors, photodiodes, phototransistor are possible. The choice of a device for controlling the switches depends on the technology chosen. As examples, the following devices can be used:
  • an optical fiber for a photoelectric type switch,
  • a laser beam generated by external means and exciting a photoelectric switch,
  • an electromagnetic wave according to the principles of remote power supply known from the field of RFID (" Radio Frequency Identification " in English).

Le premier commutateur 40 du premier circuit de dĆ©phasage 4 alterne entre l'Ć©tat passant et l'Ć©tat bloquĆ©, tandis que, simultanĆ©ment, le second commutateur 41 du premier circuit de dĆ©phasage 4 alterne entre l'Ć©tat bloquĆ© et l'Ć©tat passant. En d'autres termes, Ć  tout instant, les premier et second commutateurs 40, 41 appartenant au premier circuit de dĆ©phasage 4 prĆ©sentent deux Ć©tats opposĆ©s, soit passant/bloquĆ©, soit bloquĆ©/passant. Les Ć©tats passant/passant ou bloquĆ©/bloquĆ© ne sont pas autorisĆ©s. De la mĆŖme faƧon, le premier commutateur 50 du deuxiĆØme circuit de dĆ©phasage 5 alterne entre l'Ć©tat passant et l'Ć©tat bloquĆ©, tandis que, simultanĆ©ment, le second commutateur 51 du deuxiĆØme circuit de dĆ©phasage 5 alterne entre l'Ć©tat bloquĆ© et l'Ć©tat passant. En d'autres termes, Ć  tout instant, les premier et second commutateurs 50, 51 appartenant au deuxiĆØme circuit de dĆ©phasage 5 prĆ©sentent deux Ć©tats opposĆ©s, soit passant/bloquĆ©, soit bloquĆ©/passant. Les Ć©tats passant/passant ou bloquĆ©/bloquĆ© ne sont pas autorisĆ©s. Comme illustrĆ© dans le tableau ci-aprĆØs, il est donc possible d'obtenir quatre Ć©tats de phase. L'Ć©tat passant est notĆ© Ā« 1 Ā» tandis que l'Ć©tat bloquĆ© est notĆ© Ā«0 Ā». Premier Commutateur 40 Second Commutateur 41 Premier Commutateur 50 Second Commutateur 51 Etat de phase 1 0 1 0 0Ā° 1 0 0 1 90Ā° 0 1 1 0 180Ā° 0 1 0 1 270Ā° The first switch 40 of the first phase shift circuit 4 alternates between the on state and the off state, while simultaneously the second switch 41 of the first phase shift circuit 4 alternates between the off state and the on state. In other words, at any time, the first and second switches 40, 41 belonging to the first phase shift circuit 4 have two opposite states, either on / off, or off / on. Passing / blocking / blocked states are not allowed. In the same way, the first switch 50 of the second phase shift circuit 5 alternates between the on state and the off state, while simultaneously the second switch 51 of the second phase shift circuit 5 alternates between the off-state and the off-state. passing state. In other words, at any moment, the first and second switches 50, 51 belonging to the second phase shift circuit 5 have two opposite states, either passing / blocking or blocking / passing. Passing / blocking / blocked states are not allowed. As shown in the table below, it is possible to obtain four phase states. The passing state is denoted "1" while the blocked state is denoted "0". First Switch 40 Second Switch 41 First Switch 50 Second Switch 51 Phase state 1 0 1 0 0 Ā° 1 0 0 1 90 0 1 1 0 180 Ā° 0 1 0 1 270 Ā°

Connexion Ʃlectrique entre les antennes de rƩception et de transmissionElectrical connection between reception and transmission antennas

L'antenne de rĆ©ception 2 et l'antenne de transmission 3 sont Ć©lectriquement connectĆ©es entre elles, afin de pouvoir les alimenter et de les coupler, en partie par l'intermĆ©diaire d'un trou d'interconnexion (Ā« via Ā» en langue anglaise) principal VP, de prĆ©fĆ©rence central, de prĆ©fĆ©rence mĆ©tallique. Le trou d'interconnexion principal VP traverse une ouverture mĆ©nagĆ©e dans le plan de masse PM. Le trou d'interconnexion principal VP n'est pas en contact avec le plan de masse PM de sorte que le trou d'interconnexion principal VP est Ć©lectriquement isolĆ© du plan de masse PM. Le trou d'interconnexion principal VP est avantageusement connectĆ© aux lignes quart d'onde 710. A titre d'exemple, pour une frĆ©quence de fonctionnement de 29 GHz, le trou d'interconnexion principal VP prĆ©sente un diamĆØtre de l'ordre de 150 Āµm.The receiving antenna 2 and the transmission antenna 3 are electrically connected to each other, to feed the coupling and, in part through a via hole ( "via" in English) main VP, preferably central, preferably metal. The main via VP passes through an opening in the ground plane PM. The main via VP is not in contact with the ground plane PM so that the main via VP is electrically isolated from the ground plane PM. The main interconnection hole VP is advantageously connected to the quarter-wave lines 710. By way of example, for an operating frequency of 29 GHz, the main interconnection hole VP has a diameter of the order of 150 Ī¼m. .

Le trou d'interconnexion principal VP est prĆ©fĆ©rentiellement connectĆ© Ć  l'antenne de rĆ©ception 2 par un premier point de connexion. Le trou d'interconnexion principal VP est prĆ©fĆ©rentiellement connectĆ© Ć  l'antenne de transmission 3 par un second point de connexion. De maniĆØre gĆ©nĆ©rale, la position des premier et second points de connexion varie selon la gĆ©omĆ©trie spĆ©cifique des antennes de rĆ©ception et de transmission 2, 3 de maniĆØre Ć  exciter le mode fondamental de rĆ©sonance. Dans le cas des gĆ©omĆ©tries illustrĆ©es Ć  la figure 3, les premier et second points de connexion sont respectivement situĆ©s prĆØs du centre de l'antenne de rĆ©ception 2 et de l'antenne de transmission 3, c'est-Ć -dire au centre de la deuxiĆØme surface de captation 21 de l'antenne de rĆ©ception 2 et au centre de la deuxiĆØme surface de rayonnement 31 de l'antenne de transmission 3. Les premier et second commutateurs 40, 41 du premier circuit de dĆ©phasage 4 s'Ć©tendent de part et d'autre du second point de connexion. Les premier et second commutateurs 50, 51 du deuxiĆØme circuit de dĆ©phasage 5 s'Ć©tendent de part et d'autre du premier point de connexion.The main interconnection hole VP is preferably connected to the receiving antenna 2 by a first connection point. The main interconnection hole VP is preferably connected to the transmission antenna 3 by a second connection point. In general, the position of the first and second connection points varies according to the specific geometry of the reception and transmission antennas 2, 3 so as to excite the fundamental mode of resonance. In the case of the geometries illustrated in figure 3 the first and second connection points are respectively located near the center of the receiving antenna 2 and the transmitting antenna 3, that is to say in the center of the second capture surface 21 of the antenna 2 and the center of the second radiating surface 31 of the transmission antenna 3. The first and second switches 40, 41 of the first phase shift circuit 4 extend on either side of the second connection point. The first and second switches 50, 51 of the second phase shift circuit 5 extend on either side of the first connection point.

Plus prĆ©cisĆ©ment, le trou d'interconnexion principal VP traverse les premier, deuxiĆØme, et troisiĆØme substrats diĆ©lectriques 6, 7, 8. En outre, le trou d'interconnexion principal VP relie le centre de la deuxiĆØme surface de captation 21 au centre de la deuxiĆØme surface de rayonnement 31 de l'antenne de transmission 3. Le trou d'interconnexion principal VP s'Ć©tend suivant une direction correspondant Ć  la normale Ć  la deuxiĆØme surface de captation 21, et Ć  la normale Ć  la deuxiĆØme surface de rayonnement 31.More specifically, the main via VP passes through the first, second and third dielectric substrates 6, 7, 8. In addition, the main interconnection hole VP connects the center of the second capture surface 21 to the center of the second radiating surface 31 of the transmission antenna 3. The main interconnection hole VP extends in a direction corresponding to the normal to the second capture surface 21, and normal to the second radiating surface 31.

Films de collageBonding films

La cellule Ć©lĆ©mentaire 1 comporte avantageusement un premier film de collage FC1 agencĆ© pour coller la seconde surface 71 du deuxiĆØme substrat diĆ©lectrique 7 sur la seconde surface 61 du premier substrat diĆ©lectrique 6. Ainsi, le premier film de collage FC1 est interposĆ© entre les premier et deuxiĆØme substrats diĆ©lectriques 6, 7. A titre d'exemple non limitatif, le premier film de collage FC1 peut prĆ©senter une Ć©paisseur de l'ordre de 114 Āµm lorsque la frĆ©quence de fonctionnement est 29 GHz.The elementary cell 1 advantageously comprises a first bonding film FC1 arranged to bond the second surface 71 of the second dielectric substrate 7 to the second surface 61 of the first dielectric substrate 6. Thus, the first bonding film FC1 is interposed between the first and second dielectric substrates 6, 7. By way of non-limiting example, the first bonding film FC1 may have a thickness of about 114 microns when the operating frequency is 29 GHz.

La cellule Ć©lĆ©mentaire 1 comporte avantageusement un second film de collage FC2 agencĆ© pour coller la seconde surface 81 du troisiĆØme substrat diĆ©lectrique 8 sur la premiĆØre surface 70 du deuxiĆØme substrat diĆ©lectrique 7. Ainsi, le second film de collage FC2 est interposĆ© entre les deuxiĆØme et troisiĆØme substrats diĆ©lectriques 7, 8. A titre d'exemple non limitatif, le second film de collage FC1 peut prĆ©senter une Ć©paisseur de l'ordre de 114 Āµm lorsque la frĆ©quence de fonctionnement est 29 GHz.The elementary cell 1 advantageously comprises a second bonding film FC2 arranged to bond the second surface 81 of the third dielectric substrate 8 to the first surface 70 of the second dielectric substrate 7. Thus, the second bonding film FC2 is interposed between the second and third dielectric substrates 7, 8. By way of non-limiting example, the second bonding film FC1 may have a thickness of about 114 microns when the operating frequency is 29 GHz.

A titre d'exemples non limitatifs, les premier et second films de collage FC1, FC2 peuvent ĆŖtre rĆ©alisĆ©s dans un matĆ©riau de type copolymĆØre thermoplastique tel que le chlorotrifluoroĆ©thylĆØne (CTFE). On peut citer comme films de collage commerciaux le CuCladĀ® 6700.As non-limiting examples, the first and second bonding films FC1, FC2 may be made of a thermoplastic copolymer type material such as chlorotrifluoroethylene (CTFE). Commercial bonding films include CuCladĀ® 6700.

Il est Ć  noter que le trou d'interconnexion principal VP traverse Ć©galement les premier et second films de collage FC1, FC2.It should be noted that the main via VP also crosses the first and second bonding films FC1, FC2.

RĆ©seau transmetteurTransmitter network

Comme illustrƩ Ơ la figure 1, le rƩseau transmetteur RT comporte au moins une source de rayonnement S, Ʃmettant de prƩfƩrence dans un domaine spectral compris entre 4 GHz et 170 GHz. La ou les sources de rayonnement S sont agencƩes pour irradier un ensemble de cellules ƩlƩmentaires 1.As illustrated in figure 1 , the transmitting network RT comprises at least one radiation source S, preferably emitting in a spectral range between 4 GHz and 170 GHz. The radiation source (s) S are arranged to irradiate a set of elementary cells 1.

Les rƩsultats obtenus pour l'architecture dƩcrite aux figures 2 et 3 (trois substrats diƩlectriques 6, 7, 8 et six niveaux de mƩtallisation), et Ơ la frƩquence de fonctionnement de 29 GHz, permettent par rapport Ơ l'Ʃtat de la technique et pour un rƩseau carrƩ de 400 cellules ƩlƩmentaires 1 :

  • d'augmenter la directivitĆ© de 2,3 dBi (dĆ©cibel isotrope),
  • d'augmenter le gain de 2,3 dBi,
  • d'augmenter le SLL (Ā« Side Lobe LevelĀ») de 5,0 dB.
The results obtained for the architecture described in figures 2 and 3 (Three dielectric substrates 6, 7, 8 and six metallization levels), and at the operating frequency of 29 GHz, allow compared to the state of the art and for a square array of 400 elementary cells 1:
  • to increase the directivity of 2.3 dBi (isotropic decibel),
  • to increase the gain by 2.3 dBi,
  • increase the SLL (" Side Lobe Level") by 5.0 dB.

En outre, la bande de transmission est relativement large (>10%) et les pertes d'insertion sont faibles (<3 dB).In addition, the transmission band is relatively wide (> 10%) and insertion losses are low (<3 dB).

L'invention ne se limite pas aux modes de rĆ©alisation exposĆ©s. L'homme du mĆ©tier est mis Ć  mĆŖme de considĆ©rer leurs combinaisons techniquement opĆ©rantes, et de leur substituer des Ć©quivalents.The invention is not limited to the exposed embodiments. Those skilled in the art are able to consider their technically operating combinations, and to substitute equivalents for them.

Claims (11)

Cellule Ć©lĆ©mentaire (1) d'un rĆ©seau transmetteur (RT) pour une antenne reconfigurable Ć  une frĆ©quence de fonctionnement, la cellule Ć©lĆ©mentaire (1) comportant : - une antenne de rĆ©ception (2), planaire, destinĆ©e Ć  recevoir une onde incidente (Ei) ; - une antenne de transmission (3), planaire, destinĆ©e Ć  transmettre l'onde incidente (Ei) avec un dĆ©phasage, et comprenant des premiĆØre et deuxiĆØme surfaces de rayonnement (30, 31) disjointes ; - un premier circuit de dĆ©phasage (4), configurĆ© pour dĆ©finir un premier couple d'Ć©tats de phase pour l'onde incidente (Ei) ; le premier circuit de dĆ©phasage (4) comprenant des premier et second commutateurs (40, 41) prĆ©sentant respectivement un Ć©tat passant et un Ć©tat bloquĆ©, en alternance ; les Ć©tats passant ou bloquĆ© correspondant Ć  une circulation d'un courant, respectivement autorisĆ©e ou bloquĆ©e, entre les premiĆØre et deuxiĆØme surfaces de rayonnement (30, 31) disjointes de l'antenne de transmission (3) ; la cellule Ć©lĆ©mentaire (1) Ć©tant caractĆ©risĆ©e en ce que l'antenne de rĆ©ception (2) comprend des premiĆØre et deuxiĆØme surfaces de captation (20, 21) disjointes ; et en ce que la cellule Ć©lĆ©mentaire (1) comporte un deuxiĆØme circuit de dĆ©phasage (5), configurĆ© pour dĆ©finir un second couple d'Ć©tats de phase pour l'onde incidente (Ei) ; le deuxiĆØme circuit de dĆ©phasage (5) comprenant des premier et second commutateurs (50, 51) prĆ©sentant respectivement un Ć©tat passant et un Ć©tat bloquĆ©, en alternance ; les Ć©tats passant ou bloquĆ© correspondant Ć  une circulation d'un courant, respectivement autorisĆ©e ou bloquĆ©e, entre les premiĆØre et deuxiĆØme surfaces de captation (20, 21) disjointes de l'antenne de rĆ©ception (2).Elementary cell (1) of a transmitting network (RT) for a reconfigurable antenna at an operating frequency, the elementary cell (1) comprising: a reception antenna (2), planar, intended to receive an incident wave (E i ); - A planar transmission antenna (3) for transmitting the incident wave (E i ) with a phase shift, and comprising first and second disjointed radiation surfaces (30, 31); a first phase shift circuit (4) configured to define a first pair of phase states for the incident wave (E i ); the first phase shift circuit (4) comprising first and second switches (40, 41) respectively having an on state and an off state alternately; the on or off states corresponding to a current flow, respectively allowed or blocked, between the first and second radiated surfaces (30, 31) of the transmitting antenna (3); the elementary cell (1) being characterized in that the receiving antenna (2) comprises disjointed first and second sensing surfaces (20, 21); and in that the elementary cell (1) comprises a second phase shift circuit (5), configured to define a second pair of phase states for the incident wave (E i ); the second phase shift circuit (5) comprising first and second switches (50, 51) respectively having an on state and an off state alternately; the on or off states corresponding to a current flow, respectively allowed or blocked, between the first and second sensing surfaces (20, 21) disjoint from the receiving antenna (2). Cellule Ć©lĆ©mentaire (1) selon la revendication 1, comportant une ligne Ć  retard (LR) configurĆ©e de sorte que le second couple d'Ć©tats de phase est dĆ©phasĆ© de 90Ā° par rapport au premier couple d'Ć©tats de phase.An elementary cell (1) according to claim 1, including a delay line (LR) configured so that the second pair of phase states is 90 Ā° out of phase with the first pair of phase states. Cellule Ć©lĆ©mentaire (1) selon la revendication 2, dans laquelle la ligne Ć  retard (LR) s'Ć©tend Ć  partir de l'antenne de rĆ©ception (2).An elementary cell (1) according to claim 2, wherein the delay line (LR) extends from the receiving antenna (2). Cellule Ć©lĆ©mentaire (1) selon l'une des revendications 1 Ć  3, comportant un premier substrat diĆ©lectrique (6) comprenant : - une premiĆØre surface (60), munie de l'antenne de rĆ©ception (2) ; - une seconde surface (61), opposĆ©e Ć  la premiĆØre surface (60), et munie de lignes de polarisation (610) agencĆ©es pour polariser les premier et second commutateurs (50, 51) du deuxiĆØme circuit de dĆ©phasage (5). Elementary cell (1) according to one of claims 1 to 3, comprising a first dielectric substrate (6) comprising: a first surface (60) provided with the reception antenna (2); - a second surface (61), opposite the first surface (60), and provided with polarization lines (610) arranged to bias the first and second switches (50, 51) of the second phase shift circuit (5). Cellule Ć©lĆ©mentaire (1) selon la revendication 4, comportant un deuxiĆØme substrat diĆ©lectrique (7) comprenant : - une premiĆØre surface (70), munie d'un plan de masse (PM) ; - une seconde surface (71), opposĆ©e Ć  la premiĆØre surface (70). Elementary cell (1) according to claim 4, comprising a second dielectric substrate (7) comprising: a first surface (70) provided with a ground plane (PM); - a second surface (71), opposite to the first surface (70). Cellule Ć©lĆ©mentaire (1) selon la revendication 5, dans laquelle la seconde surface (71) du deuxiĆØme substrat diĆ©lectrique (7) est munie de lignes quart d'onde (710) Ć©lectriquement connectĆ©es au plan de masse (PM).An elementary cell (1) according to claim 5, wherein the second surface (71) of the second dielectric substrate (7) is provided with quarter-wave lines (710) electrically connected to the ground plane (PM). Cellule Ć©lĆ©mentaire (1) selon la revendication 5 ou 6, comportant un premier film de collage (FC1) agencĆ© pour coller la seconde surface (71) du deuxiĆØme substrat diĆ©lectrique (7) sur la seconde surface (61) du premier substrat diĆ©lectrique (6).Elementary cell (1) according to claim 5 or 6, comprising a first bonding film (FC1) arranged to bond the second surface (71) of the second dielectric substrate (7) to the second surface (61) of the first dielectric substrate (6). ). Cellule Ć©lĆ©mentaire (1) selon l'une des revendications 5 Ć  7, comportant un troisiĆØme substrat diĆ©lectrique (8) comprenant : - une premiĆØre surface (80), munie de l'antenne de transmission (3) ; - une seconde surface (81), opposĆ©e Ć  la premiĆØre surface (80), et munie de lignes de polarisation (810) agencĆ©es pour polariser les premier et second commutateurs (40, 41) du premier circuit de dĆ©phasage (4). Elementary cell (1) according to one of claims 5 to 7, comprising a third dielectric substrate (8) comprising: a first surface (80) provided with the transmission antenna (3); - a second surface (81), opposite to the first surface (80), and provided with polarization lines (810) arranged to bias the first and second switches (40, 41) of the first phase shift circuit (4). Cellule Ć©lĆ©mentaire (1) selon la revendication 8 en combinaison avec la revendication 7, comportant un second film de collage (FC2) agencĆ© pour coller la seconde surface (81) du troisiĆØme substrat diĆ©lectrique (8) sur la premiĆØre surface (70) du deuxiĆØme substrat diĆ©lectrique (7).Elementary cell (1) according to claim 8 in combination with claim 7, comprising a second bonding film (FC2) arranged to bond the second surface (81) of the third dielectric substrate (8) to the first surface (70) of the second dielectric substrate (7). Cellule Ć©lĆ©mentaire (1) selon la revendication 9 en combinaison avec la revendication 6, comportant un trou d'interconnexion principal (VP), agencĆ© pour connecter Ć©lectriquement l'antenne de rĆ©ception (2) et l'antenne de transmission (3); le trou d'interconnexion principal (VP) traversant les premier, deuxiĆØme, et troisiĆØme substrats diĆ©lectriques (6, 7, 8) ainsi que les premier et second films de collage (FC1, FC2) ; le trou d'interconnexion principal (VP) Ć©tant Ć©lectriquement isolĆ© du plan de masse (PM); le trou d'interconnexion principal (VP) Ć©tant connectĆ© aux lignes quart d'onde (710).An elementary cell (1) according to claim 9 in combination with claim 6 having a main interconnection hole (VP) arranged to electrically connect the receiving antenna (2) and the transmitting antenna (3); the main via (VP) traversing the first, second, and third dielectric substrates (6, 7, 8) as well as the first and second bonding films (FC1, FC2); the hole main interconnection (VP) being electrically isolated from the ground plane (PM); the main interconnection hole (VP) being connected to the quarter wave lines (710). Antenne reconfigurable Ć  une frĆ©quence de fonctionnement, comportant un rĆ©seau transmetteur (RT) comprenant un ensemble de cellules Ć©lĆ©mentaires (1) selon l'une des revendications 1 Ć  10.Antenna reconfigurable at an operating frequency, comprising a transmitter network (RT) comprising a set of elementary cells (1) according to one of claims 1 to 10.
EP18166901.1A 2017-04-14 2018-04-11 Elementary cell of a transmitter network for a reconfigurable antenna Active EP3392959B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1753285A FR3065329B1 (en) 2017-04-14 2017-04-14 ELEMENTARY CELL OF A TRANSMITTER NETWORK FOR A RECONFIGURABLE ANTENNA

Publications (2)

Publication Number Publication Date
EP3392959A1 true EP3392959A1 (en) 2018-10-24
EP3392959B1 EP3392959B1 (en) 2020-09-02

Family

ID=59811399

Family Applications (1)

Application Number Title Priority Date Filing Date
EP18166901.1A Active EP3392959B1 (en) 2017-04-14 2018-04-11 Elementary cell of a transmitter network for a reconfigurable antenna

Country Status (3)

Country Link
US (1) US10680329B2 (en)
EP (1) EP3392959B1 (en)
FR (1) FR3065329B1 (en)

Cited By (2)

* Cited by examiner, ā€  Cited by third party
Publication number Priority date Publication date Assignee Title
EP3840116A1 (en) * 2019-12-18 2021-06-23 Commissariat Ć  l'Energie Atomique et aux Energies Alternatives Reconfigurable antenna with transmitter network with monolithic integration of elementary cells
EP4117117A1 (en) 2021-07-07 2023-01-11 Commissariat ƀ L'Ɖnergie Atomique Et Aux Ɖnergies Alternatives Antenna cell with transmitter network

Families Citing this family (11)

* Cited by examiner, ā€  Cited by third party
Publication number Priority date Publication date Assignee Title
US10171139B1 (en) 2016-02-02 2019-01-01 Ethertronics, Inc. Inter-dwelling signal management using reconfigurable antennas
RU196050U1 (en) * 2019-10-04 2020-02-14 Š¤ŠµŠ“ŠµŃ€Š°Š»ŃŒŠ½Š¾Šµ Š³Š¾ŃŃƒŠ“Š°Ń€ŃŃ‚Š²ŠµŠ½Š½Š¾Šµ Š°Š²Ń‚Š¾Š½Š¾Š¼Š½Š¾Šµ Š¾Š±Ń€Š°Š·Š¾Š²Š°Ń‚ŠµŠ»ŃŒŠ½Š¾Šµ учрŠµŠ¶Š“ŠµŠ½ŠøŠµ Š²Ń‹ŃŃˆŠµŠ³Š¾ Š¾Š±Ń€Š°Š·Š¾Š²Š°Š½Šøя "Š”Š°Š½Šŗт-ŠŸŠµŃ‚ŠµŃ€Š±ŃƒŃ€Š³ŃŠŗŠøŠ¹ Š³Š¾ŃŃƒŠ“Š°Ń€ŃŃ‚Š²ŠµŠ½Š½Ń‹Š¹ эŠ»ŠµŠŗтрŠ¾Ń‚ŠµŃ…Š½ŠøчŠµŃŠŗŠøŠ¹ уŠ½ŠøŠ²ŠµŃ€ŃŠøтŠµŃ‚ "Š›Š­Š¢Š˜" ŠøŠ¼. Š’.Š˜. Š£Š»ŃŒŃŠ½Š¾Š²Š° (Š›ŠµŠ½ŠøŠ½Š°) Modular walk through antenna cell
FR3105612B1 (en) * 2019-12-18 2023-09-15 Commissariat Energie Atomique Compact resonant cavity antenna
FR3105613B1 (en) * 2019-12-18 2021-12-17 Commissariat Energie Atomique Elementary cell of a transmitting network
CN111490351B (en) * 2020-03-18 2021-07-16 南äŗ¬ę˜Ÿč…¾é€šäæ”ꊀęœÆęœ‰é™å…¬åø Digital phased array antenna with multiple bit quantization
CN111585003B (en) * 2020-05-22 2022-02-01 ē”¬ēŸ½ē”µå­(å®ę³¢)č‚”ä»½ęœ‰é™å…¬åø IC packaging radio frequency structure and manufacturing method thereof
RU205718U1 (en) * 2020-12-25 2021-07-30 Š¤ŠµŠ“ŠµŃ€Š°Š»ŃŒŠ½Š¾Šµ Š³Š¾ŃŃƒŠ“Š°Ń€ŃŃ‚Š²ŠµŠ½Š½Š¾Šµ Š°Š²Ń‚Š¾Š½Š¾Š¼Š½Š¾Šµ Š¾Š±Ń€Š°Š·Š¾Š²Š°Ń‚ŠµŠ»ŃŒŠ½Š¾Šµ учрŠµŠ¶Š“ŠµŠ½ŠøŠµ Š²Ń‹ŃŃˆŠµŠ³Š¾ Š¾Š±Ń€Š°Š·Š¾Š²Š°Š½Šøя "Š”Š°Š½Šŗт-ŠŸŠµŃ‚ŠµŃ€Š±ŃƒŃ€Š³ŃŠŗŠøŠ¹ Š³Š¾ŃŃƒŠ“Š°Ń€ŃŃ‚Š²ŠµŠ½Š½Ń‹Š¹ эŠ»ŠµŠŗтрŠ¾Ń‚ŠµŃ…Š½ŠøчŠµŃŠŗŠøŠ¹ уŠ½ŠøŠ²ŠµŃ€ŃŠøтŠµŃ‚ "Š›Š­Š¢Š˜" ŠøŠ¼. Š’.Š˜. Š£Š»ŃŒŃŠ½Š¾Š²Š° (Š›ŠµŠ½ŠøŠ½Š°) Cell of modular loop-through antenna array
FR3122780A1 (en) 2021-05-07 2022-11-11 Commissariat A L'energie Atomique Et Aux Energies Alternatives Transmitter array antenna cell
FR3123513A1 (en) * 2021-06-01 2022-12-02 Commissariat A L'energie Atomique Et Aux Energies Alternatives Stack for manufacturing an integrated circuit intended to provide an electromagnetic lens function for a reconfigurable antenna with a transmitter array
FR3135572A1 (en) 2022-05-11 2023-11-17 Commissariat A L'energie Atomique Et Aux Energies Alternatives LOW PROFILE ANTENNA WITH TWO-DIMENSIONAL ELECTRONIC SCANNING
WO2024035054A1 (en) * 2022-08-11 2024-02-15 Corning Incorporated Devices to direct the path of electromagnetic radiation

Citations (5)

* Cited by examiner, ā€  Cited by third party
Publication number Priority date Publication date Assignee Title
FR2445036A1 (en) * 1978-12-22 1980-07-18 Thomson Csf ELECTRONIC SCANNING MICROWAVE DEPHASER AND ANTENNA HAVING SUCH A PHASER
US6184828B1 (en) * 1992-11-18 2001-02-06 Kabushiki Kaisha Toshiba Beam scanning antennas with plurality of antenna elements for scanning beam direction
US6556168B1 (en) * 1998-12-24 2003-04-29 Nec Corporation Phased array antenna and its manufacturing method
US7030824B1 (en) * 2003-05-29 2006-04-18 Lockheed Martin Corporation MEMS reflectarray antenna for satellite applications
FR2969832A1 (en) * 2010-12-24 2012-06-29 Commissariat Energie Atomique RADIATION CELL WITH TWO PHASE STATES FOR TRANSMITTER NETWORK

Family Cites Families (3)

* Cited by examiner, ā€  Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009023551A1 (en) 2007-08-10 2009-02-19 Arizona Board Of Regents And On Behalf Of Arizona State University Hybrid integrated mems reconfigurable antenna array (himra)
US7791552B1 (en) * 2007-10-12 2010-09-07 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Cellular reflectarray antenna and method of making same
US10511100B2 (en) * 2016-02-02 2019-12-17 Georgia Tech Research Corporation Inkjet printed flexible Van Atta array sensor

Patent Citations (5)

* Cited by examiner, ā€  Cited by third party
Publication number Priority date Publication date Assignee Title
FR2445036A1 (en) * 1978-12-22 1980-07-18 Thomson Csf ELECTRONIC SCANNING MICROWAVE DEPHASER AND ANTENNA HAVING SUCH A PHASER
US6184828B1 (en) * 1992-11-18 2001-02-06 Kabushiki Kaisha Toshiba Beam scanning antennas with plurality of antenna elements for scanning beam direction
US6556168B1 (en) * 1998-12-24 2003-04-29 Nec Corporation Phased array antenna and its manufacturing method
US7030824B1 (en) * 2003-05-29 2006-04-18 Lockheed Martin Corporation MEMS reflectarray antenna for satellite applications
FR2969832A1 (en) * 2010-12-24 2012-06-29 Commissariat Energie Atomique RADIATION CELL WITH TWO PHASE STATES FOR TRANSMITTER NETWORK

Cited By (7)

* Cited by examiner, ā€  Cited by third party
Publication number Priority date Publication date Assignee Title
EP3840116A1 (en) * 2019-12-18 2021-06-23 Commissariat Ć  l'Energie Atomique et aux Energies Alternatives Reconfigurable antenna with transmitter network with monolithic integration of elementary cells
FR3105610A1 (en) * 2019-12-18 2021-06-25 Commissariat A L'energie Atomique Et Aux Energies Alternatives Reconfigurable antenna with transmitter network with monolithic integration of elementary cells
US11296423B2 (en) 2019-12-18 2022-04-05 Commissariat A L'energie Atomique Et Aux Energies Alternatives Reconfigurable transmitarray antenna with monolithic integration of elementary cells
EP4117117A1 (en) 2021-07-07 2023-01-11 Commissariat ƀ L'Ɖnergie Atomique Et Aux Ɖnergies Alternatives Antenna cell with transmitter network
US20230010547A1 (en) * 2021-07-07 2023-01-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives Transmitarray antenna cell
FR3125173A1 (en) 2021-07-07 2023-01-13 Commissariat A L'energie Atomique Et Aux Energies Alternatives Transmitter array antenna cell
US11962094B2 (en) 2021-07-07 2024-04-16 Commissariat Ć  l'Energie Atomique et aux Energies Alternatives Transmitarray antenna cell

Also Published As

Publication number Publication date
FR3065329A1 (en) 2018-10-19
FR3065329B1 (en) 2019-07-05
US10680329B2 (en) 2020-06-09
EP3392959B1 (en) 2020-09-02
US20180301807A1 (en) 2018-10-18

Similar Documents

Publication Publication Date Title
EP3392959B1 (en) Elementary cell of a transmitter network for a reconfigurable antenna
EP3125362B1 (en) Elementary cell of a transmitter network for a reconfigurable antenna
EP2532046B1 (en) Flat-plate scanning antenna for land mobile application, vehicle comprising such an antenna, and satellite telecommunication system comprising such a vehicle
EP2656438B1 (en) Radio cell with two phase states for transmit array
EP0064313B1 (en) Circularly polarised microwave radiating element and flat microwave antenna using an array of such elements
EP1580844B1 (en) Phase shifter with linear polarization and a resonating length which can be varied using mem switches.
EP2532050B1 (en) On-board directional flat-plate antenna, vehicle comprising such an antenna, and satellite telecommunication system comprising such a vehicle
EP0497702B1 (en) Radiating element structure for a plate antenna
FR2648626A1 (en) RADIANT ELEMENT DIPLEXANT
EP2673842B1 (en) Waveguide antenna having annular slots
EP3840122A1 (en) Elementary cell of a transmitter array
EP3840116B1 (en) Reconfigurable antenna with transmitter network with monolithic integration of elementary cells
EP3840115A1 (en) Antenna with compact resonant cavity
EP4117117A1 (en) Antenna cell with transmitter network
CA2808511C (en) Flat antenna for a terminal operating in dual circular polarisation, airborne terminal and satellite telecommunication system featuring at least one antenna
FR2724491A1 (en) MINIATURIZED, DOUBLE-POLARIZED, VERY WIDE BAND PLATED ANTENNA
EP4099498A1 (en) Stack for manufacturing an integrated circuit intended for providing an electromagnetic lens function for a reconfigurable antenna with transmitter network
EP2190061A1 (en) Radiating element network and antenna comprising such a network
WO2023218008A1 (en) Low-profile antenna with two-dimensional electronic scanning
FR3085550A1 (en) COMPACT ANTENNAIRE DEVICE
EP2889955A1 (en) Compact antenna structure for satellite telecommunication

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE

17P Request for examination filed

Effective date: 20180411

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

AX Request for extension of the european patent

Extension state: BA ME

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: EXAMINATION IS IN PROGRESS

17Q First examination report despatched

Effective date: 20190516

REG Reference to a national code

Ref country code: DE

Ref legal event code: R079

Ref document number: 602018007364

Country of ref document: DE

Free format text: PREVIOUS MAIN CLASS: H01Q0001220000

Ipc: H01Q0003460000

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: GRANT OF PATENT IS INTENDED

RIC1 Information provided on ipc code assigned before grant

Ipc: H01Q 3/34 20060101ALI20200320BHEP

Ipc: H01Q 21/00 20060101ALI20200320BHEP

Ipc: H01Q 1/22 20060101ALI20200320BHEP

Ipc: H01Q 3/46 20060101AFI20200320BHEP

Ipc: H01Q 9/04 20060101ALI20200320BHEP

INTG Intention to grant announced

Effective date: 20200414

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE PATENT HAS BEEN GRANTED

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

REG Reference to a national code

Ref country code: GB

Ref legal event code: FG4D

Free format text: NOT ENGLISH

REG Reference to a national code

Ref country code: AT

Ref legal event code: REF

Ref document number: 1309876

Country of ref document: AT

Kind code of ref document: T

Effective date: 20200915

Ref country code: CH

Ref legal event code: EP

REG Reference to a national code

Ref country code: DE

Ref legal event code: R096

Ref document number: 602018007364

Country of ref document: DE

REG Reference to a national code

Ref country code: IE

Ref legal event code: FG4D

Free format text: LANGUAGE OF EP DOCUMENT: FRENCH

REG Reference to a national code

Ref country code: LT

Ref legal event code: MG4D

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: FI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200902

Ref country code: LT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200902

Ref country code: BG

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20201202

Ref country code: NO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20201202

Ref country code: GR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20201203

Ref country code: HR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200902

Ref country code: SE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200902

REG Reference to a national code

Ref country code: NL

Ref legal event code: MP

Effective date: 20200902

REG Reference to a national code

Ref country code: AT

Ref legal event code: MK05

Ref document number: 1309876

Country of ref document: AT

Kind code of ref document: T

Effective date: 20200902

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: PL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200902

Ref country code: LV

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200902

Ref country code: RS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200902

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SM

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200902

Ref country code: CZ

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200902

Ref country code: RO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200902

Ref country code: PT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20210104

Ref country code: EE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200902

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: AL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200902

Ref country code: AT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200902

Ref country code: ES

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200902

Ref country code: IS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20210102

REG Reference to a national code

Ref country code: DE

Ref legal event code: R097

Ref document number: 602018007364

Country of ref document: DE

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200902

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed

Effective date: 20210603

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200902

Ref country code: SI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200902

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200902

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MC

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200902

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LU

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20210411

REG Reference to a national code

Ref country code: BE

Ref legal event code: MM

Effective date: 20210430

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: CH

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20210430

Ref country code: LI

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20210430

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20210411

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20210102

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: BE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20210430

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: NL

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20200923

Ref country code: CY

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200902

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: HU

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT; INVALID AB INITIO

Effective date: 20180411

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: FR

Payment date: 20230424

Year of fee payment: 6

Ref country code: DE

Payment date: 20230418

Year of fee payment: 6

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 20230421

Year of fee payment: 6