EP3313781A1 - Matériau nanostructuré de bore amorphe - Google Patents
Matériau nanostructuré de bore amorpheInfo
- Publication number
- EP3313781A1 EP3313781A1 EP16750887.8A EP16750887A EP3313781A1 EP 3313781 A1 EP3313781 A1 EP 3313781A1 EP 16750887 A EP16750887 A EP 16750887A EP 3313781 A1 EP3313781 A1 EP 3313781A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- boron
- mixture
- consisting essentially
- temperature
- nanostructured
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000463 material Substances 0.000 title claims abstract description 126
- 229910052796 boron Inorganic materials 0.000 title claims abstract description 111
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 title claims abstract description 108
- 238000000034 method Methods 0.000 claims abstract description 54
- 239000002105 nanoparticle Substances 0.000 claims abstract description 26
- 239000002086 nanomaterial Substances 0.000 claims abstract description 23
- 239000000203 mixture Substances 0.000 claims description 50
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 claims description 41
- 150000003839 salts Chemical class 0.000 claims description 41
- 230000008569 process Effects 0.000 claims description 36
- 229910010277 boron hydride Inorganic materials 0.000 claims description 31
- 238000010438 heat treatment Methods 0.000 claims description 17
- 239000012298 atmosphere Substances 0.000 claims description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 16
- 239000012535 impurity Substances 0.000 claims description 16
- 229910017053 inorganic salt Inorganic materials 0.000 claims description 16
- 229910052760 oxygen Inorganic materials 0.000 claims description 16
- 239000001301 oxygen Substances 0.000 claims description 16
- 238000002360 preparation method Methods 0.000 claims description 12
- 230000003647 oxidation Effects 0.000 claims description 11
- 238000007254 oxidation reaction Methods 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- 150000001340 alkali metals Chemical class 0.000 claims description 7
- 229910000085 borane Inorganic materials 0.000 claims description 7
- 229910052783 alkali metal Inorganic materials 0.000 claims description 6
- 229910052700 potassium Inorganic materials 0.000 claims description 6
- 239000007787 solid Substances 0.000 claims description 6
- 238000003786 synthesis reaction Methods 0.000 claims description 6
- 229910052734 helium Inorganic materials 0.000 claims description 5
- 239000001307 helium Substances 0.000 claims description 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 5
- 229910052744 lithium Inorganic materials 0.000 claims description 5
- 229910052708 sodium Inorganic materials 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- 239000002243 precursor Substances 0.000 claims description 4
- 238000003860 storage Methods 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 3
- 239000000446 fuel Substances 0.000 claims description 3
- 238000001812 pycnometry Methods 0.000 claims description 3
- 238000004438 BET method Methods 0.000 claims description 2
- 239000000654 additive Substances 0.000 claims description 2
- 230000000996 additive effect Effects 0.000 claims description 2
- 229910001508 alkali metal halide Inorganic materials 0.000 claims description 2
- 150000008045 alkali metal halides Chemical group 0.000 claims description 2
- 229910052794 bromium Inorganic materials 0.000 claims description 2
- 229910052792 caesium Inorganic materials 0.000 claims description 2
- 239000003054 catalyst Substances 0.000 claims description 2
- 229910052801 chlorine Inorganic materials 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims description 2
- 239000002360 explosive Substances 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- 229910052740 iodine Inorganic materials 0.000 claims description 2
- 229910052701 rubidium Inorganic materials 0.000 claims description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 24
- 238000005481 NMR spectroscopy Methods 0.000 description 22
- 238000002844 melting Methods 0.000 description 17
- 230000008018 melting Effects 0.000 description 17
- 239000000843 powder Substances 0.000 description 17
- 238000000354 decomposition reaction Methods 0.000 description 13
- 229910052786 argon Inorganic materials 0.000 description 12
- 230000005496 eutectics Effects 0.000 description 12
- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Substances [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 description 12
- HSZCZNFXUDYRKD-UHFFFAOYSA-M lithium iodide Inorganic materials [Li+].[I-] HSZCZNFXUDYRKD-UHFFFAOYSA-M 0.000 description 11
- 238000004627 transmission electron microscopy Methods 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 10
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M lithium chloride Chemical compound [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 description 10
- 239000002245 particle Substances 0.000 description 10
- FVAUCKIRQBBSSJ-UHFFFAOYSA-M sodium iodide Chemical compound [Na+].[I-] FVAUCKIRQBBSSJ-UHFFFAOYSA-M 0.000 description 10
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 9
- 238000004458 analytical method Methods 0.000 description 9
- 239000011777 magnesium Substances 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 8
- 230000009257 reactivity Effects 0.000 description 8
- 239000011734 sodium Substances 0.000 description 8
- 229910052582 BN Inorganic materials 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000002904 solvent Substances 0.000 description 7
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 229910052749 magnesium Inorganic materials 0.000 description 6
- -1 military Substances 0.000 description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 5
- 238000002441 X-ray diffraction Methods 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 238000005119 centrifugation Methods 0.000 description 5
- 229910021397 glassy carbon Inorganic materials 0.000 description 5
- 238000000227 grinding Methods 0.000 description 5
- 239000007858 starting material Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 4
- 239000003570 air Substances 0.000 description 4
- 239000012300 argon atmosphere Substances 0.000 description 4
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- 239000012080 ambient air Substances 0.000 description 3
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 3
- 239000004327 boric acid Substances 0.000 description 3
- 150000001638 boron Chemical class 0.000 description 3
- 150000001639 boron compounds Chemical class 0.000 description 3
- 229910052810 boron oxide Inorganic materials 0.000 description 3
- 150000001642 boronic acid derivatives Chemical class 0.000 description 3
- 239000012612 commercial material Substances 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 230000001939 inductive effect Effects 0.000 description 3
- 239000000543 intermediate Substances 0.000 description 3
- 239000013067 intermediate product Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000012279 sodium borohydride Substances 0.000 description 3
- 229910000033 sodium borohydride Inorganic materials 0.000 description 3
- 235000009518 sodium iodide Nutrition 0.000 description 3
- 229910011255 B2O3 Inorganic materials 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 239000012448 Lithium borohydride Substances 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- 150000001342 alkaline earth metals Chemical class 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- LYQFWZFBNBDLEO-UHFFFAOYSA-M caesium bromide Chemical compound [Br-].[Cs+] LYQFWZFBNBDLEO-UHFFFAOYSA-M 0.000 description 2
- AIYUHDOJVYHVIT-UHFFFAOYSA-M caesium chloride Chemical compound [Cl-].[Cs+] AIYUHDOJVYHVIT-UHFFFAOYSA-M 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 2
- 125000003636 chemical group Chemical group 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000002178 crystalline material Substances 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- AMXOYNBUYSYVKV-UHFFFAOYSA-M lithium bromide Chemical compound [Li+].[Br-] AMXOYNBUYSYVKV-UHFFFAOYSA-M 0.000 description 2
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- JAAGVIUFBAHDMA-UHFFFAOYSA-M rubidium bromide Chemical compound [Br-].[Rb+] JAAGVIUFBAHDMA-UHFFFAOYSA-M 0.000 description 2
- FGDZQCVHDSGLHJ-UHFFFAOYSA-M rubidium chloride Chemical compound [Cl-].[Rb+] FGDZQCVHDSGLHJ-UHFFFAOYSA-M 0.000 description 2
- 239000011833 salt mixture Substances 0.000 description 2
- 238000004626 scanning electron microscopy Methods 0.000 description 2
- 238000000550 scanning electron microscopy energy dispersive X-ray spectroscopy Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- JHJLBTNAGRQEKS-UHFFFAOYSA-M sodium bromide Chemical compound [Na+].[Br-] JHJLBTNAGRQEKS-UHFFFAOYSA-M 0.000 description 2
- 239000011780 sodium chloride Substances 0.000 description 2
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 2
- 235000010339 sodium tetraborate Nutrition 0.000 description 2
- 230000003381 solubilizing effect Effects 0.000 description 2
- 239000012798 spherical particle Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 229910000712 Boron steel Inorganic materials 0.000 description 1
- 101000801643 Homo sapiens Retinal-specific phospholipid-transporting ATPase ABCA4 Proteins 0.000 description 1
- 229910021537 Kernite Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 102100033617 Retinal-specific phospholipid-transporting ATPase ABCA4 Human genes 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- PZKRHHZKOQZHIO-UHFFFAOYSA-N [B].[B].[Mg] Chemical compound [B].[B].[Mg] PZKRHHZKOQZHIO-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910021538 borax Inorganic materials 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Inorganic materials [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 description 1
- XQPRBTXUXXVTKB-UHFFFAOYSA-M caesium iodide Inorganic materials [I-].[Cs+] XQPRBTXUXXVTKB-UHFFFAOYSA-M 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000007806 chemical reaction intermediate Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910021540 colemanite Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000012043 crude product Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- MQMALSJXHPJEAX-UHFFFAOYSA-N cyanoiminomethylideneazanide 1-methyl-1,2,4-triazol-4-ium-4-amine Chemical compound N#C[N-]C#N.C[N+]1=CN(N)C=N1 MQMALSJXHPJEAX-UHFFFAOYSA-N 0.000 description 1
- 238000001739 density measurement Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- CDMADVZSLOHIFP-UHFFFAOYSA-N disodium;3,7-dioxido-2,4,6,8,9-pentaoxa-1,3,5,7-tetraborabicyclo[3.3.1]nonane;decahydrate Chemical compound O.O.O.O.O.O.O.O.O.O.[Na+].[Na+].O1B([O-])OB2OB([O-])OB1O2 CDMADVZSLOHIFP-UHFFFAOYSA-N 0.000 description 1
- 238000002296 dynamic light scattering Methods 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 239000000374 eutectic mixture Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 125000001475 halogen functional group Chemical group 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910010276 inorganic hydride Inorganic materials 0.000 description 1
- 239000002608 ionic liquid Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910003002 lithium salt Inorganic materials 0.000 description 1
- 159000000002 lithium salts Chemical class 0.000 description 1
- 159000000003 magnesium salts Chemical class 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000133 mechanosynthesis reaction Methods 0.000 description 1
- 238000011235 metanalysis Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 238000000655 nuclear magnetic resonance spectrum Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- MOWNZPNSYMGTMD-UHFFFAOYSA-N oxidoboron Chemical class O=[B] MOWNZPNSYMGTMD-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000011698 potassium fluoride Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000011369 resultant mixture Substances 0.000 description 1
- AHLATJUETSFVIM-UHFFFAOYSA-M rubidium fluoride Inorganic materials [F-].[Rb+] AHLATJUETSFVIM-UHFFFAOYSA-M 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 239000004328 sodium tetraborate Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000002336 sorption--desorption measurement Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000011232 storage material Substances 0.000 description 1
- 239000004753 textile Substances 0.000 description 1
- 229910021539 ulexite Inorganic materials 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J21/00—Catalysts comprising the elements, oxides, or hydroxides of magnesium, boron, aluminium, carbon, silicon, titanium, zirconium, or hafnium
- B01J21/02—Boron or aluminium; Oxides or hydroxides thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/02—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the alkali- or alkaline earth metals or beryllium
- B01J23/04—Alkali metals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J27/00—Catalysts comprising the elements or compounds of halogens, sulfur, selenium, tellurium, phosphorus or nitrogen; Catalysts comprising carbon compounds
- B01J27/06—Halogens; Compounds thereof
- B01J27/08—Halides
- B01J27/10—Chlorides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J35/00—Catalysts, in general, characterised by their form or physical properties
- B01J35/60—Catalysts, in general, characterised by their form or physical properties characterised by their surface properties or porosity
- B01J35/61—Surface area
- B01J35/617—500-1000 m2/g
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B35/00—Boron; Compounds thereof
- C01B35/02—Boron; Borides
- C01B35/023—Boron
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
- C01P2002/86—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by NMR- or ESR-data
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/50—Agglomerated particles
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/10—Solid density
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/12—Surface area
Definitions
- the invention relates to a nanostructured material consisting essentially of boron, said material being in amorphous form and comprising aggregates of boron nanoparticles, as well as its method of preparation and its uses.
- Elemental boron (ie zero degree of oxidation) has been widely described in the literature in the amorphous state or in the crystalline state. Elemental boron does not exist in its natural state. Boron is most often found in the form of combinations with oxygen and metals (eg Na, Ca), for example in borax Na 2 B 4 O 7 , 10H 2 O (or sodium tetraborate decahydrate), borosilicate glasses ( Pyrex ®), boric acid (H 3 B0 3), colemanite (Ca 2 B 6 0ii, 5H 2 0), kernite (Na 2 B 4 0 7, 4H 2 0), ulexite (NaCaB 5 0 9 , 8H 2 0) and various borates.
- oxygen and metals eg Na, Ca
- borax Na 2 B 4 O 7 , 10H 2 O or sodium tetraborate decahydrate
- borosilicate glasses Pyrex ®
- boric acid H 3 B
- boron plays an important role in nuclear reactors because of its neutron absorption capabilities, boron steel being used as a rod in nuclear power plants.
- Boron compounds are used for various applications, including the manufacture of certain grades of glass and detergents. Boron reacts directly with most metals to produce metal borides such as magnesium boride (MgB 2 ). It can also be used as a reagent to lead to boron carbides or boron nitrides. Boron and its alloys have good properties of hardness, electrical and thermal conduction, photoconduction or even superconductivity. Boron can in particular be used in coatings resistant to stress and radiation or in materials for the storage of dihydrogen.
- amorphous phase i.e. non-crystalline
- elemental boron is characterized by the absence of grain boundaries in its structure, which gives it a high breaking strength and a good seal. In addition, it is more reactive than the crystalline phase.
- amorphous elemental boron constitutes a very difficult element to obtain in the pure state since it oxidizes very easily; and on the other hand, it is not very reactive, even inert, compared with other heteroelements such as phosphorus. As a result, further processing or use requires very high temperatures and / or pressures.
- gaseous molecular precursors such as boranes or boron halides on surfaces or by electric arc.
- solid amorphous boron that is to say in the form of micrometric or sub-micrometric particles (ie the particle diameter is greater than about 100 nm), which is not very reactive, in particular because of their low specific surface area (eg less than about 50 m 2, g -1 ) and generally partly oxidized at the surface, especially in contact with air, and they involve high costs and / or high temperatures and / or significant environmental risks.
- the reaction is carried out in a vertical reactor protected from oxygen by a stream of argon.
- the crude product obtained is crushed into small pieces of about 1 mm and washed in hydrochloric acid to remove the many byproducts of the reaction.
- Solid amorphous boron with a purity ranging from about 86 to 95% is thus obtained by this method.
- amorphous bores currently available are characterized by a specific surface area of the order of 10-20 m 2 . g "1 , translating a boron in the form of micrometric particles (ie the diameter of the particles ranging from 0.6 to 4 pm approximately) and as a result, not very reactive.
- Bellot et al. [Chem. Commun., 2009, 3214-3215] described the preparation of elemental boron by pyrolysis of decaborane under argon at a pressure of 1 atmosphere and a temperature ranging from 700 to 900 ° C.
- the elemental boron powder obtained comprises about 97 mol% of boron, is free of boron oxide and comprises boron nanoparticles having a diameter ranging from about 45 to 100 nm according to the images by transmission electron microscopy.
- boron is predominantly in crystalline form, and therefore in a non-reactive phase.
- decaborane is a source of boron with a high cost (about 5000 € per 100 g), and production yields are low (40%).
- the McCrary process comprises a step of grinding a commercial solid amorphous boron (particle size of the order of 2 ⁇ m) for 12 hours, then a step of grinding the mixture obtained in the presence of an ionic liquid [MAT] [DCA] (ie 1-methyl-4-amino-1,2,4-triazoliumdicyanamide) for 6 hours and finally a grinding step of the mixture of the previous step in acetonitrile for 6 hours.
- MAT] ionic liquid
- DCA 1-methyl-4-amino-1,2,4-triazoliumdicyanamide
- the object of the present invention is to overcome the drawbacks of the aforementioned prior art and to provide a nanostructured amorphous boron material, said material consisting essentially of boron, being little or not oxidized, and having an improved reactivity with respect to the materials. of the prior art.
- Another object of the invention is to provide a process for the preparation of a nanostructured amorphous boron material, said process being economical, easy to implement and making it possible to lead to a material consisting essentially of boron, little or not oxidized, and having improved reactivity compared to the materials of the prior art.
- the invention therefore has for its first object a nanostructured material consisting essentially of boron, characterized in that it is in the amorphous form and comprises aggregates of boron nanoparticles of size less than or equal to about 25 nm, preferably from about 1 to about 20 nm, and more preferably from about 2 to about 10 nm.
- the nanoparticles of the material of the invention have a size of less than or equal to about 25 nm, preferably from 1 to about 20 nm, and more preferably from about 2 to 10 nm. These sizes are smaller than commercial amorphous boron and amorphous boron materials described in the prior art, inducing improved reactivity.
- a nanostructured material is a material composed of aggregated nanoparticles, thus having a structure internal to the nanoscale.
- the material of the invention meets the definition of "International Organization for Standardization" of a nanostructured material.
- the size of the boron nanoparticles was measured by transmission electron microscopy (TEM).
- nanoparticle aggregates means aggregates whose aggregate-level chemical composition is the same from one aggregate to the other, each of the aggregates representing an assembly (or set) nanoparticles covalently bound together by boron-boron bonds.
- the size distribution of the aggregates in a dispersion measured by dynamic light scattering is between 40 nm. and about 200 nm, preferably between 50 nm and 150 nm, and more preferably centered around 70 nm.
- the material of the invention consists essentially of boron, that is to say that it consists of at least about 85 mol% boron, preferably at least about 90 mol% boron, more preferably at least about 95 mol% boron, and more preferably at least about 97 mol% boron, the remainder being unavoidable impurities from the process for obtaining said material and / or its oxidation and / or equipment used during the production process (eg synthesis container).
- the unavoidable impurities resulting from the process for obtaining said material may be one or more halogen and / or alkali metal atoms, such as one or more of the following elements: Li, Na, K, Rb, Cs, I, Cl , Br, F.
- the unavoidable impurity resulting from the oxidation of said material is oxygen. It is present in the form of chemical groups B0 3 or B0 4 , in oxidized boron compounds such as B 2 O 3 or B (OH) 3 .
- the unavoidable impurities of the material of the invention preferably comprise at most 5 mol% oxygen, and more preferably at most 3 mol% oxygen (ie the material comprises at most 5 mol% oxygen, and more preferably at most 3 mol% mole of oxygen).
- the unavoidable impurities from the equipment used during the production process may be carbon.
- the unavoidable impurities originating from the equipment used during the process for obtaining the material of the invention preferably comprise at most 4 mol% of carbon, and more preferably at most 1 mol% of carbon (ie material comprises at most 4 mol% carbon, and more preferably at most 1 mol% carbon).
- the material of the invention consists of 90 to 100 mol% boron, 0 to 5 mol% oxygen and about 0 to 5 mol% unavoidable impurities from the process of obtaining said material and / or the equipment used during the production process.
- the material of the invention consists of 90 to 100 mol% boron, 0 to 3 mol% oxygen and 0 to 7 mol% about unavoidable impurities from the process of obtaining said material and / or the equipment used during the production process.
- the unavoidable impurities originating from the process for obtaining the material of the invention may also contain hydrogen atoms, in particular originating from the presence of borane as an intermediate product or as starting material for the process as described below (eg presence of boron-hydrogen bonds of boranes).
- the unavoidable impurities from the process for obtaining the material of the invention preferably comprise at most 10 mol% of hydrogen, and more preferably do not comprise hydrogen (ie the material comprises at most 10 mol% about hydrogen, and more preferably about 0 mol% hydrogen).
- the material of the invention (obtained according to the process as detailed below) does not preferably comprise boranes such as diborane B 2 H 6 .
- the expression "nanostructured material consisting essentially of boron in the amorphous form” means that the boron constituting the material of the invention is amorphous, that is to say that it is not crystalline or that his X-ray diffractogram does not show a crystalline signature. In other words, his X-ray diffractogram shows the presence of a halo and the absence of diffraction peaks.
- the material of the invention is a nanostructured material consisting essentially of boron comprising aggregates of boron nanoparticles of size less than or equal to about 25 nm, preferably from about 1 to about 20 nm, and preferably still ranging from 2 to about 10 nm, said boron being in the amorphous form.
- the constituents (atoms, molecules or ions) of the amorphous material of the invention do not respect any order at medium or great distance. This makes it possible to distinguish it from a crystalline material, in which the constituents are assembled in a regular manner.
- the material has a specific surface area S B ET of at least 500 m 2 . about 1 g, preferably at least about 700 m 2 g -1 , and more preferably at least about 800 m 2 . about 1 , said specific surface area S B B being calculated by the BET method (ie, Brunauer's method, Emmett and Teller, 1938).
- the material of the present invention is a porous material. It can therefore have a porosity of at least about 50% and preferably at least about 60%.
- the material has a density ranging from 1.1 to 2.3, and preferably from 1.2 to about 1.6, said density being measured by helium pycnometry, especially with a device marketed under the reference Ultrapyc 1200e by Quantachrome Instruments.
- the boron nanoparticles of the material of the invention are spherical preference.
- the nanostructured amorphous boron material of the invention has excellent purity and is little or not oxidized. In addition, it has a greater specific surface area and a lower density than the amorphous boron of the prior art, inducing a significant improvement in its reactivity, especially in the synthesis of metal borides.
- the subject of the invention is a process for preparing a nanostructured material consisting essentially of boron as defined in the first subject of the invention, characterized in that it comprises at least one step i) of heating under an inert atmosphere a mixture comprising at least one boron hydride and at least one inorganic salt, step i) being carried out at a temperature T s sufficient to decompose said boron hydride and for said salt to be at least partially in the state molten.
- the process of the invention is simple and economical. It is based on the decomposition in one or more inorganic salts of at least one elemental boron hydride amorphous at a temperature T s allowing the partial or complete melting of said salts and said decomposition.
- the decomposition temperature of a boron hydride depends on the medium in which it decomposes.
- inert atmosphere means a non-oxidizing atmosphere, thus avoiding the oxidation of boron, and / or a non-reactive atmosphere, avoiding for example the formation of boron nitride.
- the term "temperature Ts sufficient for said salt is at least partially in the molten state” means that the temperature T s must be greater than or equal to the melting temperature T fs of said salt (when a only inorganic salt is used). In the case where the mixture comprises several inorganic salts, the temperature T s must be greater than or equal to the melting start temperature of said mixture.
- the melting start temperature of the mixture is the melting temperature T f of the eutectic when the mixture of inorganic salts has a eutectic point.
- T f melting temperature
- the melting start temperature of the mixture is the melting temperature T f of the eutectic when the mixture of inorganic salts has a eutectic point.
- the composition of the mixture of said plurality of inorganic salts is generally selected to form a eutectic.
- composition of the mixture may be different from that for forming a eutectic.
- the term "temperature T s sufficient to decompose said boron hydride” means that the temperature T s must be greater than or equal to the decomposition temperature T d of the boron hydride in the inorganic salt or the mixture of inorganic salts at least partially in the molten state. Indeed, if the temperature T s is greater than or equal to the melting temperature of the inorganic salt T fs but still less than the decomposition temperature of the boron hydride T d in said inorganic salt, the material obtained at the end of of step i) is not in accordance with the invention, in particular it does not include aggregates of boron nanoparticles with a size of at most about 25 nm. Moreover, its specific surface is significantly reduced and is partly oxidized, which alters its reactivity.
- the melting temperature of the inorganic salt T fs or the temperature of the eutectic of the inorganic salts of T fe mixture or the incipient melting temperature of the inorganic salt mixture is preferably from 200 to about 800 ° C, and more preferably from 250 to 700 ° C.
- the temperature T s is sufficient to decompose said boron hydride and for the inorganic salt or the mixture of inorganic salts to be completely in the molten state.
- step i) is carried out under an argon or helium atmosphere.
- Step i) can be carried out in a vessel (eg crucible) based on glassy carbon, boron nitride or molybdenum.
- the vessel is a vitreous carbon, boron nitride crucible (eg> 99 mol% boron nitride) or a mixture of boron nitride and silica (eg 60 mol%). boron nitride and 40 mol% silica).
- the process may further comprise a step i 0 ) prior to step i), mixing at least one boron hydride with at least one inorganic salt, said salt and said boron hydride being in the solid state ( eg in the form of powders).
- the mixture can be made manually, in particular by means of a mortar, mechanically, in particular by means of a ball mill, by ultrasound, or by prior dispersion in a liquid that is not reactive with respect to the salt. inorganic and boron hydride, said liquid can then be removed by filtration, centrifugation or evaporation.
- the method may further comprise a step i 0- i) transfer under an inert atmosphere of the mixture from step i 0 ) in a container as defined in the invention.
- the at least partially molten inorganic salt (s) act as a solvent for the boron hydride during step i).
- the amount of inorganic salts in the mixture of step i) is preferably sufficient to allow the dispersion of the particles resulting from the decomposition of boron hydride.
- the mixture preferably comprises from 0.1 to 20 wt.% Of boron hydride and from about 80 to 99.9 wt.% Of inorganic salts.
- the mixture of step i) preferably does not comprise other solvent (s) than said inorganic salts.
- Step i) is performed for a period ranging from 1 minute to
- the boron hydride may be selected from boranes and borohydrides of alkali metal.
- the heating temperature T s of step i) is preferably from 600 to
- borane Bi 0 H 4 decaborane Bi 0 H 4 or dodecaborane Bi 2 H 2 2 - , which may be used in the form of potassium dodecaborane (K 2 Bi 2 Hi 2 ).
- alkali metal borohydride suitable for the process of the present invention, mention may be made of LiBH 4 , NaBH 4 or KBH 4 .
- the boron hydride is preferably an alkali metal borohydride.
- the inorganic salt may be an alkali metal halide, such as LiI, LiCl, LiBr, LiF, KI, KCl, KBr, KF, NaI, NaCl, NaBr, NaF, Rbl, RbBr, RbCl, RbF, CsI, CsBr, CsCl or CsF, and preferably such as Lil, LiCl, NaI, NaCl, Kl or KCl.
- alkali metal halide such as LiI, LiCl, LiBr, LiF, KI, KCl, KBr, KF, NaI, NaCl, NaBr, NaF, Rbl, RbBr, RbCl, RbF, CsI, CsBr, CsCl or CsF, and preferably such as Lil, LiCl, NaI, NaCl, Kl or KCl.
- the inorganic salt does not comprise oxygen in order to avoid any oxidation of the boron during the implementation of the process of the invention.
- the mixture of step i) preferably comprises one or two inorganic salts such as those mentioned above.
- the boron hydride is NaBH 4 and the mixture comprises two inorganic salts Kl and Lil, where the boron hydride is NaBH 4 and the inorganic salt is Nal, or the boron hydride is LiBH 4 and the mixture comprises two inorganic salts Lil and LiCl.
- the mixture of step i) preferably comprises only one or more boron hydrides and one or more inorganic salts, in order to avoid any parasitic reaction that may reduce the amount of material of the invention formed.
- the method may further advantageously comprise a step ii) cooling the mixture obtained at the end of step i).
- the cooling makes it possible to reach a temperature below the solidification temperature of the mixture obtained at the end of step i). Cooling is generally carried out to room temperature (eg, about 20-25 ° C).
- the method may further comprise a step iii) of purifying the mixture obtained after step i) or step ii).
- Step iii) preferably comprises washing said mixture with a solvent for solubilizing the salts remaining or formed during step i); and separating, especially by filtration and / or centrifugation, the material of the invention from said salts dissolved in said solvent.
- the solvent used is preferably water that is free of dissolved oxygen and saturated with an inert gas, in particular chosen from argon and nitrogen, or an organic solvent (ie non-aqueous), in particular a non-oxidizing solvent, chosen in particular from alcohols, ethers and any other solvent for solubilizing the salts remaining or formed during step i), as well as any impurities.
- an inert gas in particular chosen from argon and nitrogen
- an organic solvent ie non-aqueous
- a non-oxidizing solvent chosen in particular from alcohols, ethers and any other solvent for solubilizing the salts remaining or formed during step i), as well as any impurities.
- the method may further comprise a step iv) of drying the material of step iii), in particular under vacuum.
- Step iv) can be carried out at a temperature ranging from 0 ° C to 100 ° C, and preferably from 20 ° C to 40 ° C.
- the method may further comprise a step v) of storage in the absence of air of the material obtained in step iv), for example under an inert atmosphere of argon, nitrogen or helium or under vacuum.
- the third object of the invention is the use of a nanostructured material consisting essentially of boron as defined in the first subject of the invention or obtained according to the process as defined in the second subject of the invention, for storage dihydrogen.
- the fourth subject of the invention is the use of a nanostructured material consisting essentially of boron as defined in the first object of the invention or obtained according to the process as defined in the second subject of the invention, as a precursor for the synthesis of borated compounds, and in particular of boron-based crystalline materials such as metal borides (eg MgB 2 ).
- a nanostructured material consisting essentially of boron as defined in the first object of the invention or obtained according to the process as defined in the second subject of the invention, as a precursor for the synthesis of borated compounds, and in particular of boron-based crystalline materials such as metal borides (eg MgB 2 ).
- the fifth subject of the invention is the use of a nanostructured material consisting essentially of boron as defined in the first subject of the invention or obtained according to the process as defined in the second subject of the invention, as a catalyst.
- the sixth subject of the invention is the use of a nanostructured material consisting essentially of boron as defined in the first subject of the invention or obtained according to the process as defined in the second subject of the invention, as a additive with high energy density in liquids or hypergolic solids, explosives or fuels, especially in the field of space propulsion.
- XRD - X-ray diffraction
- NMR nuclear magnetic resonance
- TEM transmission electron microscopy
- the specific surface area was evaluated using an apparatus sold under the trade name Belsorp max by Bel Japan.
- TEM transmission electron microscopy
- the boron nuclear magnetic resonance analyzes were carried out using an apparatus sold under the trade name AV 700, by the company Bruker, with the following parameters: magnet 16.4 T, rotation of the sample at 20 kHz around the magic angle.
- the X-ray diffraction analyzes were carried out using an apparatus sold under the trade name D8p by the company Bruker.
- the melting temperature of the Lil / KI eutectic mixture (Lil / KI mass ratio of 58:42) as used is about 286 ° C.
- the resulting mixture was transferred under an inert atmosphere (argon) to a glassy carbon vessel, heated under an inert atmosphere (argon) at a temperature of about 800 ° C for about 1 hour, and then cooled to room temperature. ambient to solidify.
- the resultant mixture was washed several times with methanol by successive centrifugations to dissolve the remaining or formed salts and remove them.
- the resulting wet powder was dried under vacuum at about 40 ° C for about 2 hours to yield material Mi. Material Mi was then stored under argon atmosphere. The same process was reproduced by changing the heating temperature of 800 ° C. Temperatures of about 400, 500, 550 and 600 ° C were used respectively to lead to materials ⁇ , M ' 2 , M' 3 and M ' 4 .
- Table 1 shows the characteristics of materials Mi, 'i, M' 2 , M ' 3 and M' 4 obtained according to the heating conditions, namely the specific surface area S B AND (in m 2 .g -1 ), the composition of starting materials and / or reaction intermediates and / or contaminants (by NMR analysis n B) and the molar proportions of the various elements (by MEB-EDX analysis).
- Table 1 shows firstly that the material Mi has a specific surface S BET of 860 m 2 . about 1 , while the material M ' 4 has a surface area of only about 25 m 2, g -1 .
- NMR analysis n B of the material Mi showed the presence of a single large peak, as well as very weak signals corresponding to oxidized boron derivatives B0 4 and B0 3 .
- the product directly from the process comprises even less oxygen than is seen by NMR since the characterization of the samples for the NMR analyzes implies a confinement in a rotor which is not perfectly sealed . Under these conditions, a slight exposure to ambient air of about 15 minutes, and therefore possible oxidation of boron, is likely.
- the NMR analysis n B of the material M ' 0 i is a reference making it possible to locate the signature of the oxidized groups B0 3 and B0 4 in an NMR spectrum n B.
- n B of the material M'0 2 (commercial amorphous boron) showed the presence of groups B0 3 , as well as a distribution of chemical shifts different from that of Mi, expressing different BB environments in M ' O2 and Mi, and therefore different short orders.
- the n B NMR signal is composed of multiple broad peaks.
- the NMR signature of M 2 Bi 2 Hi 2 is always present in material M ' 4 , although poorly distinguished in the form of a shoulder of the larger peak corresponding to amorphous boron.
- FIG. 3a 20 nm scale
- FIG. 3b 10 nm scale
- FIG. 3c 5 nm scale
- Figure 4 shows the size distribution of the nanoparticles in the material Mi, the calculation having been made on the basis of 150 size measurements made from MET images on several regions of different aggregates.
- the material Mi according to the invention comprises aggregates of nanoparticles with a size ranging from about 2 to 10 nm, and in particular with an average size of about 5.6 nm.
- the calculated surface area S ca icuiée for a perfectly smooth spherical particle diameter of 5.6 nm and a density of 1.33 g. cm "3, is 810 m 2. g" 1. This value is consistent with the specific surface S B ET measured on the material Mi.
- the nitrogen adsorption and desorption isotherms of the material Mi have shown the existence of mesopores formed by the intergrain spaces between the nanoparticles.
- the X-ray diffraction analysis of the material Mi showed the amorphous phase of the boron since no peak is present (ie phase having no long-range order).
- the broad peaks at low angles are due to the spread of X-rays as they pass through the dome under which the powder is stored, away from the ambient air.
- the heating temperature used was higher than the melting temperature of the eutectic (ie 286 ° C.), thus making it possible to have the mixture of inorganic salts in the molten state.
- the use of a temperature that is too low, for example less than or equal to 600 ° C. does not make it possible to completely decompose the boron hydride (ie NaBH 4 ), and therefore does not lead to a material according to the invention, that is to say comprising aggregates of boron nanoparticles with a size of at most about 25 nm, the boron being in amorphous form.
- a temperature of 600 ° C is not sufficient to decompose NaBH 4 completely when it is reacted with lithium iodide and potassium iodide in proportions as described above.
- this sufficient temperature T s depends both on the inorganic salt used (ie its melting point or softening point), if it is mixed with other inorganic salts, the decomposition temperature of boron hydride used, etc.
- a temperature of 600 ° C could be sufficient if the reaction is carried out with another boron hydride mixed with identical inorganic salts, or with an identical boron hydride mixed with one or more different inorganic salts, or with another boron hydride mixed with one or more different inorganic salts.
- Example 2 Preparation of a Nanostructured Material consisting essentially of Boron M 2 According to the First Object of the Invention and Comparison with a Material Not in Accordance with the Invention M ' 5
- LiBH 4 lithium borohydride
- LiCl lithium chloride
- Liiodide lithium iodide
- the melting temperature of the eutectic LiCl / Li mixture as used is about 371 ° C.
- the resulting mixture was transferred under an inert atmosphere (argon) to a glassy carbon vessel, heated under an inert atmosphere (argon) at a temperature of about 800 ° C for 1 hour, and then cooled to room temperature. to solidify.
- the resulting mixture was washed several times with methanol by successive centrifugations in order to dissolve the remaining and formed salts and to remove them.
- the resulting wet powder was dried under vacuum at about 40 ° C for about 2 hours to yield the material M 2 .
- the material M 2 was then stored under an argon atmosphere.
- Table 2 shows the characteristics of the materials M 2 and M ' 5 obtained according to the heating conditions, namely the SBET surface area (in m 2 ⁇ g -1 ), the composition of starting and / or intermediate products. reaction and / or contaminants (by NMR analysis n B) and the molar proportions of the various elements (by MEB-EDX analysis).
- Table 2 shows firstly that the material M 2 has a SBET surface area of 900 m 2 . about 1 g.
- NMR analysis n B materials M 2 and M ' 5 was performed (see Figure 7).
- NMR analysis n B of the material M 2 showed the presence of a single large peak. No signal corresponding to oxidation of boron to oxidized boron derivatives B0 4 and B0 3 was present.
- the material M 2 does not therefore comprise starting material and / or intermediate of the decomposition reaction of the alkaline borohydrides which may possibly be formed during heating, such as Li 2 Bi 2 Hi 2 and LiBH 4 .
- FIG. 8a 20 nm scale
- FIG. 8b 10 nm scale
- This observation by TEM is consistent with the high value of the specific surface area of said material M 2 which is 900 m 2 . about 1 g.
- the MEB-EDX analysis of the material M 2 showed the production of amorphous boron with a purity higher than 98%. Lithium was not detected. The presence of oxygen could be due to oxidation during sample preparation for SEM-EDX analysis (exposure to air for about 1 minute).
- the heating temperature used was higher than the melting temperature of the eutectic (ie 371 ° C), thus allowing to have the mixture of inorganic salts in the molten state.
- the use of a temperature that is too low, for example less than or equal to 550 ° C. does not make it possible to completely decompose the boron hydride (ie LiBH 4 ), and therefore does not lead to a material according to the invention, that is to say comprising aggregates of boron nanoparticles with a size of at most about 25 nm, the boron being in amorphous form.
- Example 3 Preparation of a Nanostructured Material consisting essentially of Boron M 3 According to the First Object of the Invention and Comparison with a Material Not in Accordance with the Invention M ' 6
- the melting temperature of Nal is about 660 ° C.
- the resulting mixture was transferred under an inert atmosphere (argon) to a glassy carbon vessel, heated under an inert atmosphere (argon) at a temperature of about 800 ° C for about 1 hour, and then cooled to room temperature. ambient to solidify.
- argon inert atmosphere
- the resulting mixture was washed several times with methanol by successive centrifugations in order to dissolve the remaining and formed salts and to remove them.
- the resulting wet powder was dried under vacuum at about 40 ° C for about 2 hours to yield material M 3 .
- the material M 3 was then stored under an argon atmosphere.
- Table 3 shows the characteristics of the materials M 3 and M ' 6 obtained according to the heating conditions, namely the SBET surface area (in m 2 ⁇ g -1 ), the composition of starting and / or intermediate products. reaction and / or contaminants (by NMR analysis n B) and the molar proportions of the various elements (by M EB-EDX analysis).
- Table 3 shows firstly that the material M 3 has a specific surface S BE T of 700 m 2 . g "1 , while the material M ' 6 has a significantly lower specific surface area S B ET of 33 m 2. g " 1 .
- NMR analysis n B of the material M 3 showed the presence of a single large peak.
- the material M 3 does not therefore comprise starting material and / or intermediates of the decomposition reaction of the alkaline borohydrides which may possibly be formed during heating, such as Na 2 Bi 2 Hi 2 and Na BH 4 .
- Traces of chemical groups B0 3 and B0 4 were detected in the form of a shoulder of the main broad peak corresponding to amorphous boron at the corresponding chemical shift values. These groups indicate a slight oxidation, probably due to the transfer of the powder in a non-sealed rotor for the RM N characterization, inducing a slight exposure to ambient air of about 15 minutes.
- the material M ' 6 also comprises oxidized boron derivatives such as B0 3 and B0 4 .
- the TEM analysis of the material M 3 (FIG. 10a: 20 nm scale, FIG. 10b: 10 nm scale) showed a morphology of the material M 3 very similar to that observed for the materials Mi and M 2 , with nanoparticle sizes. very close (size less than about 20 nm). This observation by TEM is consistent with the high value of the specific surface area of said material M 3 which is 700 m 2 . about 1 g.
- the MEB-EDX analysis of the material M 3 has shown the obtaining of amorphous boron with a purity of 90, 1% -
- the presence of oxygen can be due to an oxidation during the preparation of the sample for the SEM-EDX analysis (exposure to air about 15 minutes).
- This example 3 demonstrates the need to carry out the process of the invention (see step i) in at least partially melted medium, that is to say at a temperature T s at least greater than or equal to the temperature. melting salt or eutectic, or starting melting of the mixture if more than one salt is used.
- the process of the invention must take place at a temperature T s sufficient to ensure the total decomposition of the borohydride amorphous boron, which is not the case at 600 ° C, whatever the medium envisaged.
- T s sufficient to ensure the total decomposition of the borohydride amorphous boron, which is not the case at 600 ° C, whatever the medium envisaged.
- the specific surface and purity properties of the alkali metals are significantly reduced at a temperature T which is not sufficient to decompose said boron hydride and for said salt or salt mixture to be at least partially in the molten state.
- the X-ray diffraction (FIG. 12) made it possible to show the presence of a majority crystalline phase Mg B 2 and a minor phase MgO in the material obtained.
- the width of the reflections of Mg B 2 can be interpreted by a particle size effect.
- the apparent size of the crystalline domains calculated by the Scherrer formula is about 40 nm.
- the apparent crystal domain sizes for MgO reflections are about 20 nm.
- the powder was observed by scanning electron microscopy (FIG. 13a: 500 nm scale, FIG. 13b: 2 ⁇ m scale).
- the Mg B 2 particles adopt a morphology in the form of hexagonal platelets with a thickness ranging from about 50 to 100 nm, and a length ranging from about 500 nm to about 1 ⁇ m.
- the platelet chemical nature was confirmed by high resolution transmission electron microscopy (Fig. 14), where the hexagonal structure of Mg B 2 is found , with interplanar distances corresponding to (100), (010) planes, and (110) (see Fourier transform of Fig. 14 as an insert of the same figure).
- the observation of a plate according to the slice also made it possible to observe the (001) plans of MgB 2 (data not provided).
- Example 2 The same process was then reproduced using a commercially available amorphous boron material M ' 0 2 identical to that used in Example 1.
- the X-ray diffraction patterns of the two powders, synthesized from materials Mi and M' 02 have been added in FIG. 15. While the powder prepared from the amorphous boron material of the invention Mi mainly consists of MgB 2 and an impurity of MgO, the powder prepared from commercial amorphous boron material not according to the invention ⁇ 2 contains MgB 2 , MgO and Mg. An additional peak (indicated by a star in Figure 15) could not be identified, and corresponds to unknown contamination.
- the relative intensities between the peaks of MgB 2 and those of MgO show that MgO is present in greater proportions in the powder from M ' 0 2 than in that from Mi.
- a greater proportion of MgO as well as the presence of magnesium Mg residual metal in the powder from M ' 0 2 indicates that the conversion of amorphous boron MgB 2 is not total during the reaction from commercial boron not according to the invention M' 02 .
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WO2019167813A1 (fr) * | 2018-02-28 | 2019-09-06 | 三菱瓦斯化学株式会社 | CONDUCTEUR IONIQUE CONTENANT Li2B12H12 ET LiBH4 AINSI QUE PROCÉDÉ DE FABRICATION DE CELUI-CI, ET ÉLECTROLYTE SOLIDE POUR PILE À ÉLECTROLYTE SOLIDE CONTENANT CE CONDUCTEUR IONIQUE |
EP3663019A1 (fr) | 2018-12-07 | 2020-06-10 | The Swatch Group Research and Development Ltd | Procédé de fabrication d'alliages de métaux précieux et alliages de métaux précieux ainsi obtenus |
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US6511943B1 (en) * | 2002-03-13 | 2003-01-28 | The Regents Of The University Of California | Synthesis of magnesium diboride by magnesium vapor infiltration process (MVIP) |
IT1392558B1 (it) * | 2008-12-22 | 2012-03-09 | Siri | Procedimento per la produzione di boro elementare, opzionalmente drogato |
-
2015
- 2015-06-25 FR FR1555878A patent/FR3037944B1/fr not_active Expired - Fee Related
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2016
- 2016-06-23 US US15/738,375 patent/US10730035B2/en not_active Expired - Fee Related
- 2016-06-23 EP EP16750887.8A patent/EP3313781A1/fr not_active Withdrawn
- 2016-06-23 WO PCT/FR2016/051545 patent/WO2016207558A1/fr active Application Filing
Non-Patent Citations (3)
Title |
---|
DOU ZHI-HE ET AL: "Preparation and characterization of amorphous boron powder with high activity", TRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA, vol. 24, no. 5, 1 May 2014 (2014-05-01), AMSTERDAM, NL, pages 1446 - 1451, XP055874725, ISSN: 1003-6326, DOI: 10.1016/S1003-6326(14)63211-8 * |
PICKERING A ET AL: "Room temperature synthesis of surface-functionalised boron nanoparticles", CHEMICAL COMMUNICATIONS, ROYAL SOCIETY OF CHEMISTRY, UK, no. 6, 14 February 2007 (2007-02-14), pages 580 - 582, XP002663162, ISSN: 1359-7345, [retrieved on 20070111], DOI: 10.1039/B614363F * |
See also references of WO2016207558A1 * |
Also Published As
Publication number | Publication date |
---|---|
WO2016207558A1 (fr) | 2016-12-29 |
FR3037944B1 (fr) | 2017-08-11 |
US10730035B2 (en) | 2020-08-04 |
US20180169620A1 (en) | 2018-06-21 |
FR3037944A1 (fr) | 2016-12-30 |
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