EP3306646A4 - Charged particle beam exposure apparatus and device manufacturing method - Google Patents

Charged particle beam exposure apparatus and device manufacturing method Download PDF

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Publication number
EP3306646A4
EP3306646A4 EP16807445.8A EP16807445A EP3306646A4 EP 3306646 A4 EP3306646 A4 EP 3306646A4 EP 16807445 A EP16807445 A EP 16807445A EP 3306646 A4 EP3306646 A4 EP 3306646A4
Authority
EP
European Patent Office
Prior art keywords
exposure apparatus
charged particle
particle beam
device manufacturing
beam exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP16807445.8A
Other languages
German (de)
French (fr)
Other versions
EP3306646A1 (en
Inventor
Yuichi Shibazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of EP3306646A1 publication Critical patent/EP3306646A1/en
Publication of EP3306646A4 publication Critical patent/EP3306646A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G03F7/704—Scanned exposure beam, e.g. raster-, rotary- and vector scanning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H01L21/76892—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern
    • H01L21/76894—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern using a laser, e.g. laser cutting, laser direct writing, laser repair

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Optics & Photonics (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
EP16807445.8A 2015-06-08 2016-06-07 Charged particle beam exposure apparatus and device manufacturing method Withdrawn EP3306646A4 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2015116160 2015-06-08
JP2015116161 2015-06-08
PCT/JP2016/066825 WO2016199738A1 (en) 2015-06-08 2016-06-07 Charged particle beam exposure apparatus and device manufacturing method

Publications (2)

Publication Number Publication Date
EP3306646A1 EP3306646A1 (en) 2018-04-11
EP3306646A4 true EP3306646A4 (en) 2019-01-23

Family

ID=57504503

Family Applications (1)

Application Number Title Priority Date Filing Date
EP16807445.8A Withdrawn EP3306646A4 (en) 2015-06-08 2016-06-07 Charged particle beam exposure apparatus and device manufacturing method

Country Status (8)

Country Link
US (1) US10593514B2 (en)
EP (1) EP3306646A4 (en)
JP (1) JP6973072B2 (en)
KR (1) KR20180016423A (en)
CN (1) CN107710383A (en)
HK (1) HK1243824A1 (en)
TW (1) TWI712864B (en)
WO (1) WO2016199738A1 (en)

Citations (10)

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Publication number Priority date Publication date Assignee Title
US3899728A (en) * 1972-07-21 1975-08-12 Max Planck Gesellschaft Apparatus for maintaining high precision in a rotating device used with optical apparatus
US4550258A (en) * 1982-07-27 1985-10-29 Nippon Telegraph & Telephone Public Corporation Aperture structure for charged beam exposure
JPS61294745A (en) * 1985-06-24 1986-12-25 Toshiba Corp Alignment method for charged beam
JPS62287556A (en) * 1986-06-05 1987-12-14 Toshiba Corp Axis-aligning method for charged beam
JP2002075826A (en) * 2000-08-28 2002-03-15 Nikon Corp Charged-particle beam exposure system
US6545274B1 (en) * 1999-09-02 2003-04-08 Nikon Corporation Methods and devices for determining times for maintenance activity performed on a charged-particle-beam microlithography apparatus, and microelectronic-device-manufacturing methods comprising same
JP2004104021A (en) * 2002-09-12 2004-04-02 Canon Inc Aligner and method for manufacturing device
US20060151721A1 (en) * 2004-11-09 2006-07-13 Tetsuro Nakasugi Electron beam drawing apparatus, deflection amplifier, deflection control device, electron beam drawing method, method of manufacturing semiconductor device, and electron beam drawing program
US20070288121A1 (en) * 2006-01-19 2007-12-13 Nikon Corporation Movable body drive method, movable body drive system, pattern formation method, pattern forming apparatus, exposure method, exposure apparatus, and device manufacturing method
WO2008080625A1 (en) * 2006-12-29 2008-07-10 Yxlon International Feinfocus Gmbh Method and device for determining the extension of the cross-section of an electron beam

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JPS6133640Y2 (en) * 1979-09-11 1986-10-01
JPS5746856A (en) * 1980-07-28 1982-03-17 Kasai Kogyo Co Ltd Production of interior part for car
JPS5746856U (en) * 1980-08-29 1982-03-16
JPH0821351B2 (en) * 1987-06-24 1996-03-04 富士通株式会社 Electronic beam alignment method
JPH02236939A (en) * 1989-03-09 1990-09-19 Nikon Corp Scanning type electron microscope
JP2642881B2 (en) * 1994-09-28 1997-08-20 東京大学長 Ultrasensitive hydrogen detection method using slow multiply charged ions
JP2001319853A (en) * 2000-05-09 2001-11-16 Advantest Corp Method for diagnosing electron beam drift and electron beam lithography system
EP2302457B1 (en) 2002-10-25 2016-03-30 Mapper Lithography Ip B.V. Lithography system
JP4080297B2 (en) * 2002-10-28 2008-04-23 株式会社アドバンテスト Electron beam irradiation apparatus, electron beam exposure apparatus, and defect detection method
EP1753010B1 (en) 2005-08-09 2012-12-05 Carl Zeiss SMS GmbH Particle-optical system
JP5169221B2 (en) 2005-12-28 2013-03-27 株式会社ニコン Exposure apparatus and manufacturing method thereof
US8953148B2 (en) 2005-12-28 2015-02-10 Nikon Corporation Exposure apparatus and making method thereof
EP2050118A1 (en) * 2006-07-25 2009-04-22 Mapper Lithography IP B.V. A multiple beam charged particle optical system
US7561280B2 (en) 2007-03-15 2009-07-14 Agilent Technologies, Inc. Displacement measurement sensor head and system having measurement sub-beams comprising zeroth order and first order diffraction components
JP5097823B2 (en) * 2008-06-05 2012-12-12 株式会社日立ハイテクノロジーズ Ion beam equipment
JP5199756B2 (en) * 2008-07-03 2013-05-15 株式会社ニューフレアテクノロジー Method for obtaining offset deflection amount of shaped beam and drawing apparatus
US8493547B2 (en) 2009-08-25 2013-07-23 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
KR101683411B1 (en) * 2009-12-18 2016-12-06 가부시키가이샤 니콘 Method for maintaining substrate processing apparatus, and safety apparatus for substrate processing apparatus
JP5988537B2 (en) 2010-06-10 2016-09-07 株式会社ニコン Charged particle beam exposure apparatus and device manufacturing method
JP5364112B2 (en) * 2011-01-25 2013-12-11 株式会社日立ハイテクノロジーズ Charged particle beam equipment
JP5320418B2 (en) 2011-01-31 2013-10-23 株式会社日立ハイテクノロジーズ Charged particle beam equipment
JP6293435B2 (en) * 2013-08-08 2018-03-14 株式会社ニューフレアテクノロジー Multi-charged particle beam writing apparatus and multi-charged particle beam writing method
JP6294758B2 (en) * 2014-05-12 2018-03-14 株式会社ニューフレアテクノロジー Charged particle beam drawing apparatus and charged particle beam dose amount detection method

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3899728A (en) * 1972-07-21 1975-08-12 Max Planck Gesellschaft Apparatus for maintaining high precision in a rotating device used with optical apparatus
US4550258A (en) * 1982-07-27 1985-10-29 Nippon Telegraph & Telephone Public Corporation Aperture structure for charged beam exposure
JPS61294745A (en) * 1985-06-24 1986-12-25 Toshiba Corp Alignment method for charged beam
JPS62287556A (en) * 1986-06-05 1987-12-14 Toshiba Corp Axis-aligning method for charged beam
US6545274B1 (en) * 1999-09-02 2003-04-08 Nikon Corporation Methods and devices for determining times for maintenance activity performed on a charged-particle-beam microlithography apparatus, and microelectronic-device-manufacturing methods comprising same
JP2002075826A (en) * 2000-08-28 2002-03-15 Nikon Corp Charged-particle beam exposure system
JP2004104021A (en) * 2002-09-12 2004-04-02 Canon Inc Aligner and method for manufacturing device
US20060151721A1 (en) * 2004-11-09 2006-07-13 Tetsuro Nakasugi Electron beam drawing apparatus, deflection amplifier, deflection control device, electron beam drawing method, method of manufacturing semiconductor device, and electron beam drawing program
US20070288121A1 (en) * 2006-01-19 2007-12-13 Nikon Corporation Movable body drive method, movable body drive system, pattern formation method, pattern forming apparatus, exposure method, exposure apparatus, and device manufacturing method
WO2008080625A1 (en) * 2006-12-29 2008-07-10 Yxlon International Feinfocus Gmbh Method and device for determining the extension of the cross-section of an electron beam

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2016199738A1 *

Also Published As

Publication number Publication date
US20180138011A1 (en) 2018-05-17
EP3306646A1 (en) 2018-04-11
US10593514B2 (en) 2020-03-17
CN107710383A (en) 2018-02-16
WO2016199738A1 (en) 2016-12-15
TW201721290A (en) 2017-06-16
JP6973072B2 (en) 2021-11-24
TWI712864B (en) 2020-12-11
HK1243824A1 (en) 2018-07-20
JPWO2016199738A1 (en) 2018-03-29
KR20180016423A (en) 2018-02-14

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