JPS6133640Y2 - - Google Patents

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Publication number
JPS6133640Y2
JPS6133640Y2 JP12546479U JP12546479U JPS6133640Y2 JP S6133640 Y2 JPS6133640 Y2 JP S6133640Y2 JP 12546479 U JP12546479 U JP 12546479U JP 12546479 U JP12546479 U JP 12546479U JP S6133640 Y2 JPS6133640 Y2 JP S6133640Y2
Authority
JP
Japan
Prior art keywords
electron beam
temperature
processed
beam exposure
stage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP12546479U
Other languages
Japanese (ja)
Other versions
JPS5643157U (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP12546479U priority Critical patent/JPS6133640Y2/ja
Publication of JPS5643157U publication Critical patent/JPS5643157U/ja
Application granted granted Critical
Publication of JPS6133640Y2 publication Critical patent/JPS6133640Y2/ja
Expired legal-status Critical Current

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  • Electron Beam Exposure (AREA)

Description

【考案の詳細な説明】 本考案は電子ビーム露光装置に関し、特に電子
ビーム制御系で発生する熱が被処理体に伝達され
ることを防止し得る電子ビーム露光装置の構造に
関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an electron beam exposure apparatus, and more particularly to a structure of an electron beam exposure apparatus that can prevent heat generated in an electron beam control system from being transmitted to an object to be processed.

集積回路がLSI,超LSIと高度変化するに伴な
つて高精度のパターンが要求され、電子ビーム露
光方法が広く用いられるようになつてきた。
As the level of integrated circuits changes from LSI to VLSI, highly accurate patterns are required, and electron beam exposure methods have become widely used.

この電子ビーム露光において装置の精度が向上
するにつれ、マスク基板や半導体基板等被処理体
の温度誤差の影響を除くことが重要な課題となつ
てきた。
As the accuracy of the electron beam exposure apparatus improves, it has become important to eliminate the influence of temperature errors on objects to be processed, such as mask substrates and semiconductor substrates.

上記温度誤差を除くためマスク製作工程におい
てはマスク使用工程と室内温度を同一温度(基準
温度)とし、室内温度を精密に制御する方法が一
般に行われている。
In order to eliminate the above-mentioned temperature error, a method is generally used in the mask manufacturing process to precisely control the indoor temperature by setting the mask use process and the indoor temperature to the same temperature (reference temperature).

即ち精密に基準温度に制御された室内に電子ビ
ーム露光装置を設置すると共に、被処理体も同一
室内に長時間保管して装置及び材料ともに基準温
度に保つた状態で電子ビーム露光を行なう。
That is, the electron beam exposure apparatus is installed in a room whose temperature is precisely controlled to a reference temperature, and the object to be processed is also kept in the same room for a long period of time, so that electron beam exposure is performed with both the apparatus and the material kept at the reference temperature.

ところが電子ビーム露光装置内の温度は装置か
ら発生する熱のため室内温度より若干高くなるの
で被処理体を電子ビーム露光装置内のステージ上
に載置したのち、被処理体の温度が安定するまで
放置し、しかる後露光処理を行なつている。
However, the temperature inside the electron beam exposure device is slightly higher than the room temperature due to the heat generated by the device, so after placing the object to be processed on the stage inside the electron beam exposure device, the temperature of the object to be processed becomes stable. After leaving it for a while, it is then exposed to light.

上述のような方法では被処理体温度が安定する
まで数10分ないし数時間を要するので無駄な時間
が多く、従つて作業能率が悪くまた装置の使用率
も低い。
In the above-described method, it takes several tens of minutes to several hours for the temperature of the object to be processed to stabilize, resulting in a lot of wasted time, resulting in poor work efficiency and low utilization rate of the apparatus.

本考案の目的は上記電子ビーム露光に際して被
処理体の温度を安定させるための放置時間を必要
としない電子ビーム露光装置の構造を提供するこ
とにある。
An object of the present invention is to provide a structure of an electron beam exposure apparatus that does not require standing time for stabilizing the temperature of the object to be processed during the electron beam exposure.

本考案の電子ビーム露光装置の特微は、被処理
体を載置するステージに向かう電子ビームの径路
途中に、電子ビームの通過窓を有し、且つ水冷機
構を具えた遮熱器を設けたことにある。
A feature of the electron beam exposure apparatus of the present invention is that a heat shield having an electron beam passage window and a water cooling mechanism is provided in the middle of the electron beam path toward the stage on which the object to be processed is placed. There is a particular thing.

以下本考案の電子ビーム露光装置の一実施例を
図面を用いて説明する。
An embodiment of the electron beam exposure apparatus of the present invention will be described below with reference to the drawings.

第1図は電子ビーム制御系とステージとの間に
遮熱器が設けられた本発明の電子ビーム露光装置
の概略構造を示す。
FIG. 1 shows a schematic structure of an electron beam exposure apparatus of the present invention in which a heat shield is provided between an electron beam control system and a stage.

同図において、1はカソード、グリツド、アノ
ードより構成される電子銃、2は不要時間に電子
ビームをブランキングするためのブランキング用
偏向器(デフレクタ)、3は収束レンズ、4は第
1絞り、5は電子ビームの軸回りの回転を制御す
るための回転制御用レンズ、6は電子レンズ、7
は電子レンズ6によつて第2絞り8上に結像され
る第1絞り4の像の結像位置制御用偏向器(デフ
レクタ)、9は回転制御用レンズ、10は収束レ
ンズ、11は位置ぎめ用偏向器12はレジストを
塗布されたガラス基板或いは半導体基板等の被処
理体、13は被処理体12が載置されたステージ
である。
In the figure, 1 is an electron gun consisting of a cathode, grid, and anode, 2 is a blanking deflector for blanking the electron beam during unnecessary times, 3 is a converging lens, and 4 is a first aperture. , 5 is a rotation control lens for controlling the rotation of the electron beam around the axis, 6 is an electron lens, 7
is a deflector for controlling the imaging position of the image of the first aperture 4 formed on the second aperture 8 by the electronic lens 6, 9 is a rotation control lens, 10 is a converging lens, and 11 is a position control device. The deflector 12 is used for processing an object such as a glass substrate or a semiconductor substrate coated with a resist, and 13 is a stage on which the processing object 12 is placed.

上述のレンズ系及び偏向系よりなる電子ビーム
制御系には電磁レンズ或いは電磁偏向器等に多く
のコイルが用いられている。
In the electron beam control system consisting of the above-mentioned lens system and deflection system, many coils are used for electromagnetic lenses, electromagnetic deflectors, and the like.

そのため電子ビーム露光装置は動作時に上記制
御系を構成する多くのコイルで多量の熱を発生
し、その熱が輻射等により被処理体及びステージ
に伝達され、それらの温度を上昇させる。
Therefore, during operation of the electron beam exposure apparatus, a large amount of heat is generated by the many coils that constitute the control system, and this heat is transmitted to the object to be processed and the stage by radiation or the like, raising the temperature thereof.

この上昇温度は2〜3〔℃〕に達するので、被
処理体が例えばガラスよりなるマスク基板の場合
線膨脹係数が0.9×10-5〔℃-1〕であるから描画範
囲が80〔mm〕であると、1.44〜2.16〔μm〕の誤
差を生じる。
This temperature rise reaches 2 to 3 [°C], so if the object to be processed is a mask substrate made of glass, for example, the linear expansion coefficient is 0.9×10 -5 [°C -1 ], so the drawing range is 80 [mm]. This results in an error of 1.44 to 2.16 [μm].

そこで本実施例では上記電子ビームの制御系と
ステージ13との間、即ちステージ13に向かう
電子ビームの径路上に、水冷機構を具えた遮熱器
を設け、電子ビームの制御系のコイルから輻射さ
れる熱を遮断し、被処理体12及びステージ13
の温度上昇を防止するようにした。
Therefore, in this embodiment, a heat shield equipped with a water cooling mechanism is provided between the electron beam control system and the stage 13, that is, on the path of the electron beam heading toward the stage 13, so that radiation from the coil of the electron beam control system is provided. The object to be processed 12 and the stage 13 are
This prevents the temperature from rising.

該遮熱器21は第2図に示すように、熱伝導の
よい且つ非磁性体である銅(Cu)のごとき材料
よりなる基体22と該基体22に接続された冷却
水導入管23とからなる。
As shown in FIG. 2, the heat shield 21 consists of a base body 22 made of a non-magnetic material such as copper (Cu) with good thermal conductivity, and a cooling water introduction pipe 23 connected to the base body 22. Become.

基体22の外形は電子ビーム制御系を収納する
鏡筒(図示せず)に丁度収納される形状であれば
よく、本実施例では円形とした。また基体22中
央部には電子ビームの偏向範囲より稍大きい電子
ビーム通過窓24が設けられている。電子ビーム
の偏向範囲はごく小さいので本実施例では前記電
子ビーム通過窓24の大きさを直径2〔mm〕の円
とした。
The outer shape of the base body 22 may be any shape as long as it can be accommodated in a lens barrel (not shown) that accommodates an electron beam control system, and in this embodiment, it is circular. Further, an electron beam passing window 24, which is slightly larger than the deflection range of the electron beam, is provided at the center of the base body 22. Since the deflection range of the electron beam is extremely small, in this embodiment, the size of the electron beam passing window 24 is a circle with a diameter of 2 mm.

該基体22内部には、該基体22側面に接続さ
れた冷却水導入管23より導入された冷却水の通
水路が設けられ、冷却水を流すことにより基体2
2の温度を一定に保つ。本実施例の遮熱器21に
おいては、上記通水路と冷却水導入管23とによ
り、水冷機構が構成される。
A cooling water passageway is provided inside the base body 22 and is introduced from a cooling water introduction pipe 23 connected to the side surface of the base body 22. By flowing the cooling water, the base body 2
Keep the temperature of step 2 constant. In the heat shield 21 of this embodiment, the water cooling mechanism is constituted by the water passage and the cooling water introduction pipe 23.

上記冷却水は第3図に示すごとく恒温水槽25
に貯えられ、送水ポンプ26により遮熱器21に
送られ、遮熱器に設けられた通水路を通つて再び
恒温水槽25に還流する。
The above cooling water is supplied to a constant temperature water tank 25 as shown in Fig. 3.
The water is stored in the water pump 26, sent to the heat shield 21, and returned to the constant temperature water tank 25 through a water passage provided in the heat shield.

恒温水槽25の温度は前記ステージ13と同じ
温度即ち室温と同一温度に制御するのがよい。
The temperature of the constant temperature water bath 25 is preferably controlled to the same temperature as the stage 13, that is, the same temperature as the room temperature.

このようにすることにより電子ビーム露光に際
して、電子ビーム31は電子ビーム通過窓24を
通つて被処理体12に到達するが、コイルからの
輻射熱32は遮熱器21により吸収されて、冷却
水により外部に運び去られる。従つて遮熱器21
の温度は常に略水温、即ち室温に保たれ、輻射熱
32は被処理体12及びステージ13には到達し
ない。
By doing so, during electron beam exposure, the electron beam 31 reaches the object to be processed 12 through the electron beam passing window 24, but the radiant heat 32 from the coil is absorbed by the heat shield 21 and is absorbed by the cooling water. carried outside. Therefore, the heat shield 21
The temperature is always maintained at approximately the water temperature, that is, room temperature, and the radiant heat 32 does not reach the object to be processed 12 and the stage 13.

以上説明したごとく、本発明の電子ビーム露光
装置によれば被処理体及びステージの温度は電子
ビーム露光時においても殆んど変動しないので、
被処理体をステージ上に載置した後直ちに電子ビ
ーム露光を開始できる。従つて作業能率及び電子
ビーム露光装置の使用効率が大幅に改善される。
As explained above, according to the electron beam exposure apparatus of the present invention, the temperatures of the object to be processed and the stage hardly change even during electron beam exposure.
Electron beam exposure can be started immediately after placing the object to be processed on the stage. Therefore, work efficiency and usage efficiency of the electron beam exposure apparatus are greatly improved.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本考案の電子ビーム露光装置の実施例
を示す概略構成図、第2図及び第3図は上記実施
例に用いた本考案の遮熱器を示す要部斜視図及び
要部側面図である。 12……被処理体、13……ステージ、21…
…遮熱器、22……基体、23……冷却水導入
管、24……電子ビーム通過窓。
FIG. 1 is a schematic configuration diagram showing an embodiment of the electron beam exposure apparatus of the present invention, and FIGS. 2 and 3 are perspective views and side views of essential parts showing the heat shield of the present invention used in the above embodiment. It is a diagram. 12...Object to be processed, 13...Stage, 21...
... Heat shield, 22 ... Base, 23 ... Cooling water introduction pipe, 24 ... Electron beam passage window.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 被処理体を載置するステージに向かう電子ビー
ムの径路途中に、前記電子ビームを通過させるた
めの電子ビーム通過窓を有し、且つ水冷機構を具
備せる遮熱器が設けられたことを特微とする電子
ビーム露光装置。
A heat shield having an electron beam passing window for passing the electron beam and having a water cooling mechanism is provided in the middle of the path of the electron beam toward the stage on which the object to be processed is placed. Electron beam exposure equipment.
JP12546479U 1979-09-11 1979-09-11 Expired JPS6133640Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12546479U JPS6133640Y2 (en) 1979-09-11 1979-09-11

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12546479U JPS6133640Y2 (en) 1979-09-11 1979-09-11

Publications (2)

Publication Number Publication Date
JPS5643157U JPS5643157U (en) 1981-04-20
JPS6133640Y2 true JPS6133640Y2 (en) 1986-10-01

Family

ID=29357353

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12546479U Expired JPS6133640Y2 (en) 1979-09-11 1979-09-11

Country Status (1)

Country Link
JP (1) JPS6133640Y2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6973072B2 (en) * 2015-06-08 2021-11-24 株式会社ニコン Charged particle beam irradiator

Also Published As

Publication number Publication date
JPS5643157U (en) 1981-04-20

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