EP3295683B1 - Sound converter arrangement with mems sound converters - Google Patents

Sound converter arrangement with mems sound converters Download PDF

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Publication number
EP3295683B1
EP3295683B1 EP16721805.6A EP16721805A EP3295683B1 EP 3295683 B1 EP3295683 B1 EP 3295683B1 EP 16721805 A EP16721805 A EP 16721805A EP 3295683 B1 EP3295683 B1 EP 3295683B1
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EP
European Patent Office
Prior art keywords
substrate
sound transducer
mems
cavity
sound
Prior art date
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Active
Application number
EP16721805.6A
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German (de)
French (fr)
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EP3295683A1 (en
Inventor
Andrea Rusconi Clerici Beltrami
Ferruccio Bottoni
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USound GmbH
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USound GmbH
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Publication of EP3295683A1 publication Critical patent/EP3295683A1/en
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Publication of EP3295683B1 publication Critical patent/EP3295683B1/en
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    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00Electrostatic transducers
    • H04R19/04Microphones
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R1/00Details of transducers, loudspeakers or microphones
    • H04R1/02Casings; Cabinets ; Supports therefor; Mountings therein
    • H04R1/04Structural association of microphone with electric circuitry therefor
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R1/00Details of transducers, loudspeakers or microphones
    • H04R1/20Arrangements for obtaining desired frequency or directional characteristics
    • H04R1/22Arrangements for obtaining desired frequency or directional characteristics for obtaining desired frequency characteristic only 
    • H04R1/24Structural combinations of separate transducers or of two parts of the same transducer and responsive respectively to two or more frequency ranges
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R1/00Details of transducers, loudspeakers or microphones
    • H04R1/20Arrangements for obtaining desired frequency or directional characteristics
    • H04R1/22Arrangements for obtaining desired frequency or directional characteristics for obtaining desired frequency characteristic only 
    • H04R1/28Transducer mountings or enclosures modified by provision of mechanical or acoustic impedances, e.g. resonator, damping means
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R17/00Piezoelectric transducers; Electrostrictive transducers
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00Electrostatic transducers
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00Electrostatic transducers
    • H04R19/005Electrostatic transducers using semiconductor materials
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R1/00Details of transducers, loudspeakers or microphones
    • H04R1/20Arrangements for obtaining desired frequency or directional characteristics
    • H04R1/22Arrangements for obtaining desired frequency or directional characteristics for obtaining desired frequency characteristic only 
    • H04R1/28Transducer mountings or enclosures modified by provision of mechanical or acoustic impedances, e.g. resonator, damping means
    • H04R1/2869Reduction of undesired resonances, i.e. standing waves within enclosure, or of undesired vibrations, i.e. of the enclosure itself
    • H04R1/2876Reduction of undesired resonances, i.e. standing waves within enclosure, or of undesired vibrations, i.e. of the enclosure itself by means of damping material, e.g. as cladding
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R1/00Details of transducers, loudspeakers or microphones
    • H04R1/20Arrangements for obtaining desired frequency or directional characteristics
    • H04R1/22Arrangements for obtaining desired frequency or directional characteristics for obtaining desired frequency characteristic only 
    • H04R1/28Transducer mountings or enclosures modified by provision of mechanical or acoustic impedances, e.g. resonator, damping means
    • H04R1/2869Reduction of undesired resonances, i.e. standing waves within enclosure, or of undesired vibrations, i.e. of the enclosure itself
    • H04R1/2884Reduction of undesired resonances, i.e. standing waves within enclosure, or of undesired vibrations, i.e. of the enclosure itself by means of the enclosure structure, i.e. strengthening or shape of the enclosure
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R2201/00Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
    • H04R2201/003Mems transducers or their use

Definitions

  • the present invention relates to a sound transducer arrangement having a first and a second MEMS sound transducer for generating and/or detecting sound waves in the audible wavelength spectrum, each comprising a cavity, and having an ASIC electrically connected to the first MEMS sound transducer.
  • Such sound transducer arrangements can have very small dimensions and are therefore installed as loudspeakers and/or microphones, for example, in hearing aids, in-ear headphones, mobile phones, tablet computers and other electronic devices that only offer little installation space.
  • MEMS microelectromechanical systems.
  • a MEMS transducer for sound generation or a MEMS speaker is for example from DE 10 2012 220 819 A1 famous. The sound is generated via an oscillating membrane of the MEMS loudspeaker.
  • Such sound transducer arrangements are constructed specifically according to the acoustic and other requirements of the respective area of application and consist of a large number of different elements.
  • a major disadvantage of such sound transducer arrangements is that their manufacture is correspondingly complex, time-consuming and costly.
  • a sound transducer arrangement which comprises a first substrate with a switching element and a second substrate with a microphone chip.
  • the two substrates are connected to one another in an electrically conductive manner.
  • a surface mount microphone package that includes a first microphone and a second microphone. Furthermore, the surface-mount microphone package includes a first opening for the first microphone and a second opening for the second microphone. The first opening and the second opening are located on opposite sides of the surface mount microphone package.
  • An acoustic transducer arrangement is proposed with a first MEMS acoustic transducer, which includes a first cavity, and with an ASIC that is electrically connected to the first MEMS acoustic transducer.
  • the MEMS sound transducer is a microelectromechanical system for generating and/or detecting sound waves in the audible wavelength spectrum.
  • the MEMS sound transducer is preferably driven electromechanically, electrostatically and/or piezoelectrically.
  • the ASIC is an electronic application-specific integrated circuit suitable for operating the MEMS transducer.
  • cavity is to be understood as meaning a cavity by means of which the sound pressure of the MEMS sound transducer can be amplified.
  • the ASIC is embedded in a first substrate while the first MEMS transducer is disposed on a second substrate.
  • the first substrate with the integrated ASIC and the second substrate with the at least partially integrated MEMS sound transducer thus represent two separate components, ie components manufactured separately from one another.
  • the first and the second substrate are connected to one another. They thus have a common connection area in which they are in direct contact with one another.
  • the connection between the two substrates is preferably by material connection produced, these are preferably glued together. In addition or as an alternative, however, the connection can also be made by means of a form fit and/or force fit.
  • the two substrates are connected to one another in such a way that the ASIC and the first MEMS sound transducer are electrically conductively coupled or connected to one another.
  • a certain amount of rejects is inevitable in the production of sound transducer arrangements.
  • the additional costs arising from rejects can be reduced by initially producing the substrates separately from one another. Thereafter, the functionality of their respective at least one electronic component, i.e. the ASIC or the MEMS sound transducer, is checked. Only after a positive check of their functionality - i.e. when it is ensured that the ASIC and/or the MEMS sound transducer has not been damaged during the respective integration or embedding process - are they connected to each other, in particular glued. In this way it can be ensured that only two functional substrates are connected to one another to form a sound transducer arrangement.
  • the proposed sound transducer arrangement offers many advantages. If the ASIC is completely integrated into the first substrate and the first cavity is formed at least partially in the second substrate, the sound transducer arrangement can be formed in a very space-saving manner. It is advantageous if the first cavity is additionally formed in the first substrate.
  • the sound transducer arrangement can be manufactured much more efficiently.
  • the individual modules which either comprise a first substrate and an ASIC (hereinafter referred to as ASIC module for short) or a second substrate and a MEMS sound transducer (hereinafter referred to as MEMS module for short), can be produced, tested and tested independently of one another in respective sub-processes be temporarily stored if necessary. Each of these sub-processes can be specifically optimized.
  • the design of the ASIC module and the MEMS module can also be specifically optimized.
  • Connecting an ASIC module and a MEMS module can take place late in the manufacturing process.
  • This connection can take place in particular by soldering, conductive adhesive and/or in another suitable manner, so that the first and the second substrate are at least electrically and preferably also positively, non-positively and/or cohesively connected to one another.
  • the ASIC modules and/or the MEMS modules can also be manufactured in different variants and then combined to form different sound transducer arrangements, for example by combining different MEMS module variants with an ASIC module variant or a MEMS module variant can be combined with different ASIC module variants. This enables the flexible design of an extensive product family of different sound transducer arrangements while at the same time exploiting economies of scale.
  • connection between the two modules or between the first and the second substrate are designed to be detachable, so that later in the event of repairs only the defective one of the two modules has to be replaced with a new module.
  • the first cavity is at least partially formed in the second substrate. As a result, a particularly large volume of the cavity can be achieved. It is advantageous if the first cavity is additionally formed in the first substrate.
  • a second MEMS sound transducer is arranged on a third substrate.
  • the first substrate and the third substrate are electrically connected to one another.
  • such an acoustic transducer arrangement comprises the first substrate with the ASIC, the second substrate with the first MEMS acoustic transducer and the third substrate with the second MEMS acoustic transducer.
  • the first substrate is arranged between the second substrate and the third substrate.
  • the second MEMS sound transducer also includes a cavity, this second cavity being formed at least partially in the third substrate and advantageously additionally in the first substrate.
  • the modular design of the sound transducer arrangement thus advantageously enables the ASIC module to be connected to a further MEMS module, which comprises a third substrate and a second MEMS sound transducer.
  • This connection can also take place in particular by soldering, conductive adhesive and/or in another suitable manner, so that the first and the second substrate are at least electrically and preferably also positively, non-positively and/or cohesively connected to one another.
  • the two MEMS modules can essentially be designed with the same or different characteristic properties.
  • the acoustic transducer arrangement equipped with two MEMS modules usually has a better performance, in particular in the form of a greater bandwidth and/or greater sound pressure, than if it were equipped with only a single MEMS module.
  • the two cavities of the MEMS sound transducers are separated from one another by an intermediate wall of the first substrate, with the two cavities thus not influencing one another.
  • the intermediate wall preferably has at least one connection opening extending from the first cavity to the second cavity, so that there is a flow connection between the two cavities and the volume of one cavity is increased by the volume of the other cavity.
  • the partition wall has at least one stiffening element, in particular in the form of a rib, which stabilizes the partition wall and thus prevents, or at least significantly reduces, deformation and/or oscillation of the partition wall.
  • the two cavities preferably have volumes of different sizes.
  • the cavity volume can be a characteristic in which the MEMS modules differ.
  • the substrates namely the first, second and third substrate, are each designed as a circuit board or PCB (printed circuit board) and/or are produced using PCB technology.
  • PCB printed circuit board
  • the first, second and third substrates are each a PCB substrate, ie a printed circuit board that is made up of one or preferably multiple layers, the multiple layers being arranged on top of one another in the manner of a sandwich and/or being connected to one another, preferably with a material bond.
  • the first substrate can have a recess for the integrative accommodation of the ASIC, which is designed, for example, as a printed circuit board cavity with a sufficiently large volume that the ASIC can be arranged or embedded therein.
  • further components in particular passive components such as electrical resistors and/or I/O contacts, can also be embedded in and/or arranged on the first substrate.
  • the housing part and/or the sound-conducting element preferably consist of a material that is different from the substrate, in particular a plastic and/or metal.
  • the substrates are manufactured separately from one another.
  • the ASIC is embedded or encapsulated in the production of the first substrate.
  • the ASIC and/or additional active and/or passive electronic components are fully integrated in the first substrate.
  • the second substrate is manufactured separately together with the MEMS sound transducer.
  • the MEMS sound transducer can be fastened, for example, on one side of the second substrate, in particular in a materially bonded manner.
  • the MEMS sound transducer can also be connected to the second substrate in a form-fitting manner.
  • a frame of the MEMS sound transducer is encompassed by the second substrate in a form-fitting manner.
  • the membrane can vibrate freely.
  • the first module comprising the ASIC and the first substrate and/or the second module comprising the MEMS sound transducer and the second substrate -
  • they are connected to one another in a subsequent manufacturing step, in particular glued .
  • the functionality the module can be checked before its final connection, so that the scrap and consequently the manufacturing costs can be reduced.
  • the Figures 1 to 3 show a first exemplary embodiment of a sound transducer arrangement 1, which is not covered by the claimed invention, in different views.
  • the sound transducer arrangement 1 essentially comprises a first substrate 10 designed as a printed circuit board with an ASIC 11 and a second substrate 20 designed as a printed circuit board with a MEMS sound transducer 21.
  • the MEMS sound transducer 21 is provided with electrical contacts that are not shown in detail in the figures connected to the ASIC 11.
  • the MEMS sound transducer 21 can thus be controlled or operated via the ASIC 11 .
  • the sound transducer arrangement 1 has an essentially rectangular basic shape. Having a rectangular basic shape, the sound transducer arrangement can be produced easily and inexpensively and is suitable for numerous application purposes. Alternatively, however, the sound transducer arrangement can in principle also have a different basic shape, in particular a round shape.
  • the MEMS sound transducer 21 is designed in such a way that it can generate and/or detect sound waves in the audible wavelength spectrum.
  • the MEMS sound transducer 21 comprises, in addition to a MEMS actuator 22, as additional, in particular acoustic, components, a membrane 23, a membrane plate 24 and a membrane frame 25.
  • the membrane 23, which is made of rubber, for example, is fixed in its edge area connected to the membrane frame 25, while it is firmly connected to the membrane plate 24, in particular in its middle region, the membrane plate 24 itself not being connected to the membrane frame 25.
  • the membrane 23 thus spans the membrane frame 25 and is reinforced by the membrane plate 24 in particular in its central region. If the MEMS transducer 21 is to act as a speaker, for example, it can be excited via the ASIC 11 in such a way that the MEMS actuator 22, the membrane 23 for generating sound energy relative to the membrane frame 25 is vibrated.
  • the second substrate 20 carries the MEMS actuator 22 and the membrane frame 25 with the membrane 23 attached thereto, the MEMS actuator 22 being arranged below the membrane 23, and the second substrate 20 below the membrane 23 and the MEMS actuator 22 has a cavity 29 .
  • the cavity 29 is laterally surrounded or delimited by walls 27 of the second substrate 20, while it is closed at the top by the membrane 23.
  • the cavity 29 is closed at the bottom by the first substrate 10 to which the second substrate 20 is connected.
  • the cavity 29 thus forms the cavity 41 of the MEMS sound transducer 21, which is used in particular to increase the sound pressure of the MEMS sound transducer 21.
  • the membrane frame 25 has essentially the same outer diameter as the second substrate 20, while the MEMS actuator 22 has a smaller outer diameter than the substrate 20.
  • the essentially opposing wall sections 27a of the second substrate 20 are thicker than the wall sections 27b of the second substrate 20, the thicker wall sections 27a projecting into the cavity 29 compared to the wall sections 27b.
  • the MEMS actuator 22 only rests on the projections 28 formed by the wall sections 27a, while the membrane frame 25 rests, in particular over the entire circumference, on both the wall sections 27a and 27b.
  • the MEMS actuator 22 is surrounded by the membrane frame 25 on the side.
  • the MEMS sound transducer 21 and in particular the MEMS actuator 22 and/or the membrane frame 25 can be glued to the second substrate 20 be. Furthermore, the second substrate 20 can be glued to the first substrate 10 .
  • the sound transducer arrangement 1 has at least one pressure equalization channel 70, which in this exemplary embodiment comprises an equalization opening 26, which is preferably not on one of the thick wall sections 27, but on one of the thin wall portions 27 of the second substrate 20 is arranged.
  • air can flow out of the cavity 41 formed by the hollow space 29 through the pressure equalization channel 70 when the membrane 23 is lowered. In an analogous manner, however, air can also flow into the cavity 41 via the pressure compensation channel 70 when the membrane 23 is lifted.
  • the first substrate 10 has a cavity 13a which is essentially completely closed.
  • the ASIC 11 is arranged in the cavity 13a.
  • the ASIC 11 is thus completely embedded in the first substrate 10 .
  • the sound transducer arrangement 1 has electrical, in particular passive, additional components 12a, 12b, such as electrical resistors and/or I/O contacts. These additional components 12a, 12b are also embedded in the first substrate 10, being arranged in the further cavity 13b of the substrate 10, which is also essentially completely closed.
  • the additional electronic components 12a, 12b could also be arranged together with the ASIC 11 in the cavity 13a.
  • the Figures 4 to 6 show a second embodiment of the sound transducer arrangement 1, which is not covered by the claimed invention, in different views.
  • a housing part 50 is additionally provided in the second exemplary embodiment of the sound transducer arrangement 1 .
  • this housing part 50 offers protection for the MEMS sound transducer 21.
  • the housing part 50 has a cavity 53 in which the second substrate 20 and the MEMS sound transducer 21 are essentially completely received, and which extends downwards from the first substrate 10 is closed, with which the housing part 50 is connected.
  • the housing part 50 also has an acoustic inlet/outlet opening 51 which is arranged laterally on the outer surface 55 of the housing part and thus also on the sound transducer arrangement.
  • the housing part 50 is connected to the first substrate 10 and in particular also dimensioned such that at least a first section 62 of a sound-conducting channel 61 is formed between the housing part 50 and the second substrate 20 with the MEMS sound transducer 21 .
  • a second section 63 of the sound-conducting channel 61 is formed in the housing part 50 itself.
  • the housing part 50 has a tubular projection 52 in the area of the acoustic inlet/outlet opening 51 .
  • the sound conduction channel 61 is at least partially formed in that the cavity 53 of the housing part 50 is not completely filled by the second substrate 20 and the MEMS sound transducer 21 .
  • Sound can be directed and/or amplified by means of the sound conduction channel 61 from the MEMS sound transducer 21 to the acoustic entry/exit opening 51 and/or vice versa.
  • the acoustic inlet/outlet opening 51 can be positioned essentially anywhere on the outer surface 55 or another outer surface of the sound transducer arrangement 1, in particular on an installation-oriented upper side and/or on a side surface.
  • the housing part 50 also has an acoustic equalization opening 56 which is arranged laterally on the outer surface 58 of the housing part 50 .
  • the equalization opening 56 corresponds to the equalization opening 26 and, like this, belongs to the pressure equalization channel 70 of the sound transducer arrangement 1.
  • the equalization opening 56 has a larger diameter than the equalization opening 26. This means that no dirt and/or liquid can enter the cavity through the pressure equalization channel 70 41, the compensation opening 56 is covered with an elastic closure element 57 in this example.
  • the pressure equalization functionality is nevertheless ensured since the elastic closure element 57 can deform according to the pressure prevailing in the cavity 41 .
  • the Figures 7 to 9 show a third exemplary embodiment of the sound transducer arrangement 1, which is not covered by the claimed invention, in different views.
  • the cavity 41 is in each case partially formed by a hollow space in the first and second substrate 10, 20.
  • the membrane frame 25 has essentially the same outer diameter as the MEMS actuator 22, with this outer diameter being smaller than the outer diameter of the second substrate 20.
  • the second substrate 20 carries the MEMS actuator 22 and the membrane frame 25 with the membrane 23 attached thereto, with the MEMS actuator 22 being arranged below the membrane 23 and with the second substrate 20 below the membrane 23 and the MEMS actuator 22 has the cavity 29 which is closed at the top by the membrane 23.
  • the cavity 29 of the second substrate 20 is open at the bottom and borders on the cavity 15 of the first substrate 10, which is open at the top.
  • the cavities 15 and 29 have the same diameter and the lower free ends of the walls 27 correspond to the upper free ends of the walls 16.
  • the walls 16 of the first substrate 10 are connected to the walls 27 of the second substrate 20 connected and in particular glued, the cavity 15 of the first substrate and the cavity 29 of the second substrate being arranged one above the other and then together forming the cavity 41 for the MEMS sound transducer 21 .
  • a pressure compensation channel 70 is not shown in the figures for this example, but can preferably be provided.
  • the housing part 50 is very economical in this example and, in addition to the outer surface 55 on which the acoustic inlet/outlet opening 51 with the tubular projection 52 is arranged, essentially only has one further outer surface 54, which in particular provides protection for the MEMS transducer 21 provides.
  • the housing part 50 is nevertheless connected to the first substrate 10 and the second substrate 20 in such a way that at least a first section 62 of a sound duct 61 is formed between the housing part 50 and the second substrate 20 with the MEMS sound transducer 21 and the first substrate 10.
  • the second section 63 of the sound-conducting channel 61 is formed in the housing part 50 itself and in particular by the tubular projection 52 .
  • the sound-conducting element 64 is provided with a concave sound-conducting edge 65 in this example, which is arranged between the housing part 50 and the first and second substrate within the sound-conducting channel 61 . More precisely, the sound-conducting element 64 is arranged in the transition area between the first and second sections 62, 63 of the sound-conducting channel 61.
  • the sound-conducting element is designed here as a single component. Alternatively, however, it can also be formed on the housing part 50 and/or on a substrate.
  • the sound-conducting element 64 is particularly in the Figures 8 and 9 clearly visible.
  • the figure 8 shows the sound transducer arrangement 1 of the third exemplary embodiment in an exploded view.
  • the other components of the sound transducer arrangement 1 such as the ASIC 11, the substrates 10 and 20 and, above all, the MEMS actuator 22, the membrane 23 on the membrane frame 25 and the membrane plate 24 very recognizable.
  • the housing part 50 is shown semi-transparent, so that the protected components of the sound transducer arrangement 1 located behind it can still be clearly seen.
  • the figure 10 shows a fourth exemplary embodiment of the sound transducer arrangement 1, which is not covered by the claimed invention.
  • the cavity 41 is at least approximately completely filled with a porous material 5.
  • the figure 11 shows a fifth exemplary embodiment of the sound transducer arrangement 1 not covered by the claimed invention.
  • the cavity 41 is at least almost completely filled with a porous material 5.
  • the filling of the cavity 41 of the MEMS sound transducer 21 causes an effective increase in the surface area within the cavity and a virtual increase in the volume of the cavity, as a result of which greater sound pressure and better bass reproduction can be achieved.
  • the figure 12 shows a sixth exemplary embodiment of the sound transducer arrangement 1 that is not covered by the claimed invention.
  • This is a purely schematic representation of the sound transducer arrangement 1, which comprises a first substrate 10 with an ASIC 11 and a second substrate 20 with a MEMS sound transducer 21, however has no housing. Only the MEMS actuator 22 of the MEMS sound transducer 21 is shown here.
  • Both the first substrate 10 and the second substrate 20 have conductor tracks 7 for electrically connecting the individual components, such as ASIC 11 and MEMS actuator 21 in particular.
  • the conductor tracks 7 of the first substrate 10 are connected to the conductor tracks 7 of the second substrate 20 by means of soldered connections 8 or electrically conductive adhesive 8 .
  • the two substrates 10, 20 can also be connected to one another in other ways in a form-fitting, force-fitting and/or cohesive manner.
  • the second substrate 20 has a cavity 29 which is surrounded or delimited at the side by walls 27 of the second substrate 20 and is closed off at the bottom by the first substrate 10 .
  • the walls 27 have wall sections 27a projecting into the cavity 29, which provide a support 28 for the MEMS actuator 22, which has a smaller outer diameter than the second substrate 20.
  • the cavity 29 is closed at the top by the additional acoustic components of the MEMS sound transducer that belong to the MEMS actuator 22 but are not shown here.
  • the cavity 29 thus forms the cavity 41 of the MEMS sound transducer.
  • the figure 13 shows a seventh embodiment of the sound transducer arrangement 1.
  • the sound transducer arrangement 1 of this seventh exemplary embodiment also includes a third substrate 30 with a second MEMS sound transducer, of which here only the MEMS actuator 32 is shown.
  • the first substrate 10 is arranged between the second substrate 20 and the third substrate 30 .
  • the third substrate 30 with the second MEMS actuator 32 is constructed essentially like the second substrate 20 with the first MEMS actuator 22, but the third substrate 30 is arranged rotated by 180° compared to the second substrate 20.
  • the third substrate 30 therefore also has conductor tracks 7 for the electrical connection of the individual components.
  • the conductor tracks 7 of the third substrate 30 are also connected to the conductor tracks 7 of the first substrate by means of soldered connections 8 or electrically conductive adhesive 8 .
  • the two substrates 10, 30 can also be connected to one another in another way in a form-fitting, force-fitting and/or cohesive manner.
  • the third substrate 30 has a cavity 39 which is laterally surrounded or delimited by the walls 37 of the third substrate 30 and is closed at the top by the first substrate 10 .
  • the hollow space 39 is closed at the bottom by the further acoustic components of the second MEMS sound transducer 31 which belong to the second MEMS actuator 32 but are not shown here.
  • the cavity 39 thus forms the second cavity 42 of the second MEMS sound transducer.
  • the first and the second cavity 41, 42 are formed separately, but essentially with the same characteristic properties such as, for example, dimensions and volume.
  • the two cavities 41, 42 are separated from one another by an intermediate wall 17, which is provided by the first substrate 10, so that the two cavities 41, 42 do not affect one another.
  • the intermediate wall can also have at least one connection opening extending from the first cavity 41 to the second cavity 42, which is not shown here, however. This connection opening then enables a flow connection between the two cavities, so that the volume of one cavity is increased by the volume of the other cavity in each case.
  • the figure 14 shows an eighth exemplary embodiment of the sound transducer arrangement 1.
  • the sound transducer arrangement 1 of this eighth exemplary embodiment additionally includes a third substrate 30 with a second MEMS sound transducer 31.
  • the first substrate 10 is arranged between the second substrate 20 and the third substrate 30 .
  • the third substrate 30 with the second MEMS sound transducer 31 is constructed essentially like the second substrate 20 with the first MEMS sound transducer 21, but the third substrate 30 is arranged turned by 180° compared to the second substrate 20.
  • the first substrate 10 has a cavity 18 on its underside, which is delimited laterally by walls 19 of the first substrate and is closed at the top by the first substrate 10 .
  • the cavity 18 is open at the bottom and borders on the cavity 39 of the third substrate 30, which is open at the top.
  • the cavity 39 is laterally surrounded or delimited by the walls 37 of the third substrate 30 and at the bottom by the membrane 33 of the second MEMS sound transducer 31 closed.
  • the cavities 18 and 39 have the same diameter and the lower free ends of the walls 19 correspond to the upper free ends of the walls 37.
  • the walls 19 of the first substrate 10 are connected to the walls 37 of the third substrate 30 connected and in particular glued, the cavity 18 of the first substrate and the cavity 39 of the third substrate being arranged one above the other and then together forming the cavity 42 for the MEMS sound transducer 31 .
  • the first and second cavities 41, 42 in this eighth exemplary embodiment have different characteristic properties and, in particular, different dimensions and different cavity volumes. This is essentially solely due to the fact that the walls 16 on the upper side of the first substrate 10 are higher than the walls 19 on the underside of the first substrate 10.
  • the first and second MEMS sound transducers 21, 31 will already reveal a different sound behavior due to the differently designed cavities 41, 42, even under otherwise identical conditions.
  • the sound behavior of the two MEMS sound transducers can also be influenced in a targeted manner, for example, by specifically designing the membranes 23, 33 and/or the MEMS actuators 22, 32.
  • one of the MEMS transducers can act as a woofer and the other MEMS transducer can act as a tweeter, so that a sound transducer arrangement equipped in this way can generate sound in a larger bandwidth than, for example, a sound transducer arrangement according to the third exemplary embodiment.
  • the intermediate wall 17 provided by the first substrate 10, which separates the two cavities 41, 42 from one another, has four stiffening elements 14, which are designed as ribs and serve to stabilize the intermediate wall 17. Deformation and/or vibration of the intermediate wall 17, in particular during operation of the sound transducer arrangement 1, can be significantly reduced or even prevented as a result.
  • the intermediate wall 17 has at least one connection opening 90 .
  • the connection opening 90 connects the two cavities 41, 42 to one another.
  • the housing part 50 is designed very sparingly, as in the third exemplary embodiment, and in addition to the outer surface 55, on which the acoustic inlet/outlet opening 51 with the tubular projection 52 is arranged, essentially only has the other outer surfaces 54a and 54b, which offer protection for the first MEMS sound transducer 21 and the second MEMS sound transducer 31 in particular.
  • the housing part 50 is also connected to the first substrate 10, the second substrate 20 and the third substrate 30 in such a way that a first and a second sound-conducting channel 61, 67 are formed. At least a first section 62 of the first sound-conducting channel 61 is located between the housing part 50 and in particular the second substrate 20 with the MEMS sound transducer 21, and at least a first section 68 of the second sound-conducting channel 67 is formed.
  • acoustic inlet/outlet opening 51 is also provided in this sound transducer arrangement 1 .
  • the second section 63 of the first sound-conducting channel 61 and the second section 69 of the second sound-conducting channel 67 are therefore formed as a common section, which in this example is also formed in the housing part 50 itself and in particular by the tubular projection 52 in the area of the acoustic inlet/outlet opening 51 is.
  • the sound-conducting element 64 is also provided in this example to further improve the sound conduction and in particular to focus the sound.
  • the sound-conducting element 64 is designed and arranged in such a way that it separates the first section 62 of the first sound-conducting channel 61 from the first section 68 of the second sound-conducting channel 67 .
  • the sound-conducting element 64 has an extension 66 projecting into the common second section.
  • the sound-conducting element 64 has two concave sound-conducting edges 65a and 65b in this example, with the sound-conducting edge 65a being assigned to the first sound-conducting channel 61 and the sound-conducting edge 65b being assigned to the second sound-conducting channel 67 .
  • the Figures 15 to 17 show a ninth exemplary embodiment of the sound transducer arrangement 1, which is not covered by the claimed invention, in different views.
  • an additional substrate 80 is provided in the ninth exemplary embodiment of the sound transducer arrangement 1 .
  • membrane frame 25 has essentially the same outside diameter as second substrate 20
  • MEMS actuator 22 has a smaller outside diameter than substrate 20
  • the walls 27 of the second substrate 20, which laterally delimit the cavity 29 of the second substrate 20 have no wall sections projecting into the cavity 29 that could serve as a support for the MEMS actuator 22.
  • the additional substrate 80 which has essentially the same outer diameter as the second substrate 20.
  • the additional substrate 80 has a cavity 89 which is delimited laterally by walls 87 of the substrate 80, the walls 87 having a significantly lower height than the walls 27 of the second substrate 20.
  • the substantially opposing wall sections 87a of the substrate 80 are thicker than the wall sections 87b of the substrate 80, the thicker wall sections 87a projecting into the cavity 89 in relation to the wall sections 87b.
  • the MEMS actuator 22 then rests on the projections 88 formed by the wall sections 87a, while the membrane frame 25 rests, in particular over the entire circumference, both on the wall sections 87a and 87b.
  • the MEMS actuator 22 is arranged below the membrane 23 and surrounded by the membrane frame 25 on the side.
  • the cavity 89 is thus closed by the membrane 23 at the top.
  • the cavity 89 is open at the bottom and borders on the cavity 29 of the second substrate 20, which is open at the top and is closed by the first substrate 10 at the bottom.
  • the cavities 29 and 89 arranged one above the other then together form the cavity 41 for the MEMS sound transducer 21. Since the walls 27 of the second substrate 20 do not have any wall sections projecting into the cavity 29, which would reduce the cavity 29, this contributes to increasing the through the cavity 29 with the cavity 41 formed.
  • the Figures 18 to 20 show a tenth exemplary embodiment of the sound transducer arrangement 1, which is not covered by the claimed invention, in different views.
  • a housing part 50 is additionally provided in the tenth exemplary embodiment of the sound transducer arrangement 1, which is essentially as in FIG the second embodiment is formed.
  • the additional substrate 80 is also accommodated in the cavity 53 of the housing part 50 in the tenth exemplary embodiment of the sound transducer arrangement 1 .
  • the Figures 21 to 23 show an eleventh exemplary embodiment of the sound transducer arrangement 1, which is not covered by the claimed invention, in different views.
  • the eleventh exemplary embodiment of the sound transducer arrangement 1 the second substrate 20, the MEMS actuator 22 and the membrane frame 25 of the first MEMS sound transducer 21 each have the same outside diameter.
  • the walls 27 of the second substrate 20, which laterally delimit the cavity 29 of the second substrate 20, have no wall sections projecting into the cavity 29 that would have to serve as a support for the MEMS actuator 22. Rather, the MEMS actuator 22 preferably rests on the walls 27 of the second substrate 20 over its entire circumference, with the membrane frame 25 also resting on the outer edge region of the MEMS actuator 22 .
  • the second substrate 20 carries the MEMS actuator 22 and the membrane frame 25 with the membrane 23 attached thereto, with the MEMS actuator 22 being arranged below the membrane 23, and with the second substrate 20 below the membrane 23 and of the MEMS actuator 22 has the cavity 29 which is closed at the top by the membrane 23.
  • the cavity 29 of the second substrate 20 is closed by the first substrate 10 at the bottom.
  • the cavity 41 of the MEMS sound transducer 21 formed by the hollow space 29 could be enlarged effectively and at the same time in a very space-saving manner.
  • the Figures 24 to 26 show a twelfth exemplary embodiment of the sound transducer arrangement 1, which is not covered by the claimed invention, in different views.
  • a housing part 50 is additionally provided in the twelfth exemplary embodiment of the sound transducer arrangement 1, which is designed essentially as in the second exemplary embodiment.

Description

Die vorliegende Erfindung betrifft eine Schallwandleranordnung mit einem ersten und einem zweiten MEMS-Schallwandler zum Erzeugen und/oder Erfassen von Schallwellen im hörbaren Wellenlängenspektrum, die jeweils eine Kavität umfassen, und mit einem mit dem ersten MEMS-Schallwandler elektrisch verbundenen ASIC. Derartige Schallwandleranordnungen können sehr klein dimensioniert sein und werden deshalb zum Beispiel in Höhrgeräten, In-Ohr-Kopfhörern, Mobiltelefonen, Tablet-Computern und anderen elektronischen Geräten, die nur wenig Bauraum bie ten, als Lautsprecher und/oder Mikrofon verbaut.The present invention relates to a sound transducer arrangement having a first and a second MEMS sound transducer for generating and/or detecting sound waves in the audible wavelength spectrum, each comprising a cavity, and having an ASIC electrically connected to the first MEMS sound transducer. Such sound transducer arrangements can have very small dimensions and are therefore installed as loudspeakers and/or microphones, for example, in hearing aids, in-ear headphones, mobile phones, tablet computers and other electronic devices that only offer little installation space.

Die Bezeichnung MEMS steht für mikroelektromechanische Systeme. Ein MEMS-Schallwandler zur Schallerzeugung bzw. ein MEMS-Lautsprecher ist beispielsweise aus der DE 10 2012 220 819 A1 bekannt. Die Schallerzeugung erfolgt über eine schwingbar gelagerte Membran des MEMS-Lautsprechers. Derartige Schallwandleranordnungen sind gemäß den akustischen und sonstigen Anforderungen des jeweiligen Anwendungsbereichs spezifisch aufgebaut und bestehen aus einer Vielzahl unterschiedlicher Elemente. Ein wesentlicher Nachteil solcher Schallwandleranordnungen besteht darin, dass deren Herstellung entsprechend komplex, zeit- und kostenaufwendig ist.The term MEMS stands for microelectromechanical systems. A MEMS transducer for sound generation or a MEMS speaker is for example from DE 10 2012 220 819 A1 famous. The sound is generated via an oscillating membrane of the MEMS loudspeaker. Such sound transducer arrangements are constructed specifically according to the acoustic and other requirements of the respective area of application and consist of a large number of different elements. A major disadvantage of such sound transducer arrangements is that their manufacture is correspondingly complex, time-consuming and costly.

Aus der US 2012/0087521 A1 und DE 10 2011 086 722 A1 ist jeweils eine Schallwandleranordnung bekannt, die ein Substrat aufweist, in das ein ASIC eingebettet ist.From the US 2012/0087521 A1 and DE 10 2011 086 722 A1 a sound transducer arrangement is known in each case, which has a substrate in which an ASIC is embedded.

Aus der EP 2 393 307 A2 ist eine Schallwandleranordnung bekannt, die ein erstes Substrat mit einem Schaltelement und ein zweites Substrat mit einem Mikrofonchip umfasst. Die beiden Substrate sind elektrisch leitend miteinander verbunden.From the EP 2 393 307 A2 a sound transducer arrangement is known which comprises a first substrate with a switching element and a second substrate with a microphone chip. The two substrates are connected to one another in an electrically conductive manner.

Aus der DE 10 2014 214 153 A1 ist ein oberflächenmontierbares Mikrofonpackage bekannt, das ein erstes Mikrofon und ein zweites Mikrofon umfasst. Des Weiteren umfasst das oberflächenmontierbare Mikrofonpackage eine erste Öffnung für das erste Mikrofon und eine zweite Öffnung für das zweite Mikrofon. Die erste Öffnung und die zweite Öffnung sind auf gegenüberliegenden Seiten des oberflächenmontierbaren Mikrofonpackages angeordnet.From the DE 10 2014 214 153 A1 discloses a surface mount microphone package that includes a first microphone and a second microphone. Furthermore, the surface-mount microphone package includes a first opening for the first microphone and a second opening for the second microphone. The first opening and the second opening are located on opposite sides of the surface mount microphone package.

Aufgabe der vorliegenden Erfindung ist es, eine Schallwandleranordnung zu schaffen, die einfach aufgebaut und herstellbar ist.It is the object of the present invention to provide a sound transducer arrangement that is simple to construct and to produce.

Die Aufgabe wird gelöst durch eine Schallwandleranordnung mit den Merkmalen des unabhängigen Patentanspruchs 1.The object is solved by a sound transducer arrangement with the features of independent patent claim 1.

Vorgeschlagen wird eine Schallwandleranordnung mit einem ersten MEMS-Schallwandler, der eine erste Kavität umfasst, und mit einem mit dem ersten MEMS-Schallwandler elektrisch verbundenen ASIC. Der MEMS-Schallwandler ist ein mikroelektromechanisches System zum Erzeugen und/oder Erfassen von Schallwellen im hörbaren Wellenlängenspektrum. Vorzugsweise ist der MEMS-Schallwandler elektromechanisch, elektrostatisch und/oder piezoelektrisch angetrieben. Der ASIC ist ein elektronischer anwendungsspezifischer integrierter Schaltkreis (englisch: applicationspecific integrated circuit), der geeignet ist, den MEMS-Schallwandler zu betreiben. Unter der Begrifflichkeit "Kavität" ist ein Hohlraum zu verstehen, mittels dem der Schalldruck des MEMS-Schallwandlers verstärkt werden kann. Der ASIC ist in ein erstes Substrat eingebettet, während der erste MEMS-Schallwandler an einem zweiten Substrat angeordnet ist. Das erste Substrat mit dem integrierten ASIC und das zweite Substrat mit dem zumindest teilweise integrierten MEMS-Schallwandler stellen somit zwei separate, d.h. getrennt voneinander hergestellte, Bauteile dar. Das erste und das zweite Substrat sind miteinander verbunden. Sie weisen somit einen gemeinsamen Verbindungsbereich auf, in dem sie unmittelbar aneinander anliegen. Die Verbindung zwischen den beiden Substraten ist vorzugsweise über Stoffschluss hergestellt, wobei diese vorzugsweise miteinander verklebt sind. Zusätzlich oder alternativ kann die Verbindung aber auch mittels Formschluss und/oder Kraftschluss hergestellt sein. Die beiden Substrate sind derart miteinander verbunden, dass der ASIC und der erste MEMS-Schallwandler elektrisch leitend miteinander gekoppelt bzw. verbunden sind.An acoustic transducer arrangement is proposed with a first MEMS acoustic transducer, which includes a first cavity, and with an ASIC that is electrically connected to the first MEMS acoustic transducer. The MEMS sound transducer is a microelectromechanical system for generating and/or detecting sound waves in the audible wavelength spectrum. The MEMS sound transducer is preferably driven electromechanically, electrostatically and/or piezoelectrically. The ASIC is an electronic application-specific integrated circuit suitable for operating the MEMS transducer. The term "cavity" is to be understood as meaning a cavity by means of which the sound pressure of the MEMS sound transducer can be amplified. The ASIC is embedded in a first substrate while the first MEMS transducer is disposed on a second substrate. The first substrate with the integrated ASIC and the second substrate with the at least partially integrated MEMS sound transducer thus represent two separate components, ie components manufactured separately from one another. The first and the second substrate are connected to one another. They thus have a common connection area in which they are in direct contact with one another. The connection between the two substrates is preferably by material connection produced, these are preferably glued together. In addition or as an alternative, however, the connection can also be made by means of a form fit and/or force fit. The two substrates are connected to one another in such a way that the ASIC and the first MEMS sound transducer are electrically conductively coupled or connected to one another.

Bei der Herstellung von Schallwandleranordnungen tritt zwangsläufig ein gewisser Ausschuss auf. Mit der erfindungsgemäßen Schallwandleranordnung können die durch den Ausschuss entstehenden Zusatzkosten reduziert werden, indem die Substrate zunächst separat voneinander hergestellt werden. Danach wird die Funktionstüchtigkeit ihrer jeweiligen zumindest einen elektronischen Komponenten, d.h. des ASIC bzw. des MEMS-Schallwanders, überprüft. Erst nach positiver Überprüfung ihrer Funktionsfähigkeit - d.h. wenn sichergestellt ist, dass der ASIC und/oder der MEMS-Schallwandler während des jeweiligen Integrations- bzw. Einbettungsprozesses keinen Schaden genommen haben - werden diese miteinander verbunden, insbesondere verklebt. Hierdurch kann gewährleistet werden, dass jeweils nur zwei funktionsfähige Substrate miteinander zu einer Schallwandleranordnung verbunden werden.A certain amount of rejects is inevitable in the production of sound transducer arrangements. With the sound transducer arrangement according to the invention, the additional costs arising from rejects can be reduced by initially producing the substrates separately from one another. Thereafter, the functionality of their respective at least one electronic component, i.e. the ASIC or the MEMS sound transducer, is checked. Only after a positive check of their functionality - i.e. when it is ensured that the ASIC and/or the MEMS sound transducer has not been damaged during the respective integration or embedding process - are they connected to each other, in particular glued. In this way it can be ensured that only two functional substrates are connected to one another to form a sound transducer arrangement.

Die vorgeschlagene Schallwandleranordnung bietet viele Vorteile. Wenn der ASIC vollständig in das erste Substrat integriert ist und die erste Kavität zumindest teilweise im zweiten Substrat ausgebildet ist, kann die Schallwandleranordnung sehr bauraumsparend ausgebildet werden. Vorteilhaft ist es, wenn die erste Kavität zusätzlich im ersten Substrat ausgebildet ist.The proposed sound transducer arrangement offers many advantages. If the ASIC is completely integrated into the first substrate and the first cavity is formed at least partially in the second substrate, the sound transducer arrangement can be formed in a very space-saving manner. It is advantageous if the first cavity is additionally formed in the first substrate.

Dank des modularen Aufbaus mit zumindest zwei separaten Substraten, von denen das erste Substrat den ASIC enthält und das zweite Substrat den MEMS-Schallwandler trägt, ist die Schallwandleranordnung wesentlich effizienter herstellbar.Thanks to the modular structure with at least two separate substrates, of which the first substrate contains the ASIC and the second substrate carries the MEMS sound transducer, the sound transducer arrangement can be manufactured much more efficiently.

Die einzelnen Module, welche entweder ein erstes Substrat und einen ASIC umfassen (nachfolgen kurz ASIC-Modul genannt) oder ein zweites Substrat und einen MEMS-Schallwandler umfassen (nachfolgen kurz MEMS-Modul genannt), können unabhängig voneinander in jeweiligen Teilprozessen produziert, getestet und gegebenenfalls zwischengelagert werden. Dabei ist jeder dieser Teilprozesse spezifisch optimierbar. Auch das Design des ASIC-Moduls sowie des MEMS-Moduls ist spezifisch optimierbar.The individual modules, which either comprise a first substrate and an ASIC (hereinafter referred to as ASIC module for short) or a second substrate and a MEMS sound transducer (hereinafter referred to as MEMS module for short), can be produced, tested and tested independently of one another in respective sub-processes be temporarily stored if necessary. Each of these sub-processes can be specifically optimized. The design of the ASIC module and the MEMS module can also be specifically optimized.

Das Verbinden eines ASIC-Moduls und eines MEMS-Moduls kann in einer späten Phase des Herstellungsprozesses stattfinden. Dieses Verbinden kann insbesondere durch Löten, leitenden Klebstoff und/oder auf eine andere geeignete Weise erfolgen, so dass das erste und das zweite Substrat zumindest elektrisch und bevorzugt auch formschlüssig, kraftschlüssig und/oder stoffschlüssig miteinander verbunden sind.Connecting an ASIC module and a MEMS module can take place late in the manufacturing process. This connection can take place in particular by soldering, conductive adhesive and/or in another suitable manner, so that the first and the second substrate are at least electrically and preferably also positively, non-positively and/or cohesively connected to one another.

Durch die Möglichkeit des separaten Produzierens der jeweiligen Module können die ASIC-Module und/oder die MEMS-Module auch in verschiedenen Varianten gefertigt und dann zu unterschiedlichen Schallwandleranordnungen kombiniert werden, indem zum Beispiel verschiedene MEMS-Modul-Varianten mit einer ASIC-Modul-Variante oder eine MEMS-Modul-Variante mit verschiedenen ASIC-Modul-Varianten kombiniert werden. Dies ermöglicht die flexible Gestaltung einer umfangreichen Produktfamilie unterschiedlicher Schallwandleranordnungen bei gleichzeitiger Ausnutzung von Skaleneffekten.Due to the possibility of producing the respective modules separately, the ASIC modules and/or the MEMS modules can also be manufactured in different variants and then combined to form different sound transducer arrangements, for example by combining different MEMS module variants with an ASIC module variant or a MEMS module variant can be combined with different ASIC module variants. This enables the flexible design of an extensive product family of different sound transducer arrangements while at the same time exploiting economies of scale.

Durch die Möglichkeit des separaten Testens können einzelne fehlerhafte Module gezielt und frühzeitig erkannt und aussortiert werden, so dass einerseits nur zwei einwandfreie Module zu einer Schallwandleranordnung zusammenmontiert werden, und andererseits nur einzelne defekte Module entsorgt werden müssen. Dies reduziert die Ausschussmenge, spart wertvolle Ressourcen, schont die Umwelt und senkt die Kosten. Vorzugsweise ist zudem die Verbindung zwischen den beiden Modulen bzw. zwischen dem ersten und dem zweiten Substrat lösbar ausgebildet, so dass auch später im Reparaturfall lediglich das defekte der beiden Module durch ein neues Modul ersetzt werden muss.Due to the possibility of separate testing, individual faulty modules can be identified and sorted out in a targeted manner at an early stage, so that on the one hand only two flawless modules are assembled to form a sound transducer arrangement and on the other hand only individual defective modules have to be disposed of. This reduces the amount of rejects, saves valuable resources, protects the environment and lowers costs. Preferably, the connection between the two modules or between the first and the second substrate are designed to be detachable, so that later in the event of repairs only the defective one of the two modules has to be replaced with a new module.

Die erste Kavität ist zumindest teilweise in dem zweiten Substrat ausgebildet. Hierdurch kann ein besonders großes Volumen der Kavität erzielt werden. Vorteilhaft ist es, wenn die erste Kavität zusätzlich im ersten Substrat ausgebildet ist.The first cavity is at least partially formed in the second substrate. As a result, a particularly large volume of the cavity can be achieved. It is advantageous if the first cavity is additionally formed in the first substrate.

An einem dritten Substrat ist ein zweiter MEMS-Schallwandler angeordnet. Dabei sind das erste Substrat und das dritte Substrat elektrisch miteinander verbunden. Demnach umfasst eine solche Schallwandleranordnung das erste Substrat mit dem ASIC, das zweite Substrat mit dem ersten MEMS-Schallwandler und das dritte Substrat mit dem zweiten MEMS-Schallwandler. Das erste Substrat ist zwischen dem zweiten Substrat und dem dritten Substrat angeordnet. Auch der zweite MEMS-Schallwandler umfasst eine Kavität, wobei diese zweite Kavität zumindest teilweise im dritten Substrat und vorteilhafterweise zusätzlich im ersten Substrat ausgebildet ist.A second MEMS sound transducer is arranged on a third substrate. In this case, the first substrate and the third substrate are electrically connected to one another. Accordingly, such an acoustic transducer arrangement comprises the first substrate with the ASIC, the second substrate with the first MEMS acoustic transducer and the third substrate with the second MEMS acoustic transducer. The first substrate is arranged between the second substrate and the third substrate. The second MEMS sound transducer also includes a cavity, this second cavity being formed at least partially in the third substrate and advantageously additionally in the first substrate.

Der modulare Aufbau der Schallwandleranordnung ermöglicht also vorteilhafterweise das Verbinden des ASIC-Moduls mit einem weiteren MEMS-Modul, welches ein drittes Substrat und einen zweiten MEMS-Schallwandler umfasst. Auch dieses Verbinden kann insbesondere durch Löten, leitenden Klebstoff und/oder auf eine andere geeignete Weise erfolgen, so dass das erste und das zweite Substrat zumindest elektrisch und bevorzugt auch formschlüssig, kraftschlüssig und/oder stoffschlüssig miteinander verbunden sind.The modular design of the sound transducer arrangement thus advantageously enables the ASIC module to be connected to a further MEMS module, which comprises a third substrate and a second MEMS sound transducer. This connection can also take place in particular by soldering, conductive adhesive and/or in another suitable manner, so that the first and the second substrate are at least electrically and preferably also positively, non-positively and/or cohesively connected to one another.

Es versteht sich, dass die oben bezüglich des ASIC-Moduls und des MEMS-Moduls bereits genannten Merkmale und Vorteile im Wesentlichen ebenso bezüglich des weiteren MEMS-Moduls gelten.It goes without saying that the features and advantages already mentioned above with regard to the ASIC module and the MEMS module essentially also apply with regard to the further MEMS module.

Bei einer Schallwandleranordnung mit zwei MEMS-Modulen können die beiden MEMS-Module im Wesentlichen mit den gleichen oder unterschiedlichen charakteristischen Eigenschaften ausgebildet sein. In beiden Fällen weist die mit zwei MEMS-Modulen ausgestattete Schallwandleranordnung in der Regel eine bessere Leistungsfähigkeit auf, insbesondere in Form einer größeren Bandweite und/oder eines größeren Schalldrucks, als wenn sie mit nur einem einzigen MEMS-Modul ausgestattet wäre.In the case of a sound transducer arrangement with two MEMS modules, the two MEMS modules can essentially be designed with the same or different characteristic properties. In both cases, the acoustic transducer arrangement equipped with two MEMS modules usually has a better performance, in particular in the form of a greater bandwidth and/or greater sound pressure, than if it were equipped with only a single MEMS module.

Die beiden Kavitäten der MEMS-Schallwandler sind durch eine Zwischenwand des ersten Substrats voneinander getrennt, wobei die beiden Kavitäten sich somit gegenseitig nicht beeinflussen. Vorzugsweise weist die Zwischenwand zumindest eine sich von der ersten Kavität zur zweiten Kavität erstreckende Verbindungsöffnung auf, so dass eine Strömungsverbindung zwischen den beiden Kavitäten besteht und das Volumen der einen Kavität durch das Volumen der jeweils anderen Kavität vergrößert wird. Somit kann die Schallwandleranordnung sehr bauraumsparend mit einem dennoch relativ großen akustisch wirksamen Kavitätsvolumen ausgebildet werden.The two cavities of the MEMS sound transducers are separated from one another by an intermediate wall of the first substrate, with the two cavities thus not influencing one another. The intermediate wall preferably has at least one connection opening extending from the first cavity to the second cavity, so that there is a flow connection between the two cavities and the volume of one cavity is increased by the volume of the other cavity. The sound transducer arrangement can thus be designed in a very space-saving manner with a nevertheless relatively large acoustically effective cavity volume.

Vorteilhaft ist es, wenn die Zwischenwand zumindest ein Versteifungselement, insbesondere in Form einer Rippe, aufweist, wodurch eine Stabilisierung der Zwischenwand erreicht und eine Verformung und/oder ein Mitschwingen der Zwischenwand somit verhindert, zumindest aber wesentlich reduziert werden kann.It is advantageous if the partition wall has at least one stiffening element, in particular in the form of a rib, which stabilizes the partition wall and thus prevents, or at least significantly reduces, deformation and/or oscillation of the partition wall.

Vorzugsweise weisen die beiden Kavitäten unterschiedlich große Volumen auf. Somit kann das Kavitätsvolumen eine charakteristische Eigenschaft sein, in der sich die MEMS-Module unterscheiden.The two cavities preferably have volumes of different sizes. Thus, the cavity volume can be a characteristic in which the MEMS modules differ.

Die Substrate, nämlich das erste, zweite und dritte Substrat, sind jeweils als Leiterplatte bzw. PCB (printed circuit board) ausgebildet und/oder in PCB-Technologie hergestellt.The substrates, namely the first, second and third substrate, are each designed as a circuit board or PCB (printed circuit board) and/or are produced using PCB technology.

Das erste, zweite und dritte Substrat sind jeweils ein PCB-Substrat, das heißt eine Leiterplatte, die aus einer oder vorzugsweise mehreren Schichten aufgebaut ist, wobei die mehreren Schichten sandwichartig übereinander angeordnet und/oder miteinander, vorzugsweise stoffschlüssig, verbundenen sind. Insbesondere das erste Substrat kann zur integrativen Aufnahme des ASIC eine Aussparung aufweisen, die zum Beispiel als ein Leiterplattenhohlraum mit einem ausreichend großen Volumen ausgebildet ist, dass der ASIC darin angeordnet bzw. eingebettet werden kann. Zusätzlich zu dem ASIC können auch weitere Komponenten, insbesondere passive Komponenten wie elektrische Widerstände und/oder E/A-Kontakte, in dem ersten Substrat eingebettet und/oder daran angeordnet sein. Bevorzugt bestehen das Gehäuseteil und/oder das Schallleitelement aus einem im Vergleich zum Substrat anderen Material, insbesondere einem Kunststoff und/oder Metall.The first, second and third substrates are each a PCB substrate, ie a printed circuit board that is made up of one or preferably multiple layers, the multiple layers being arranged on top of one another in the manner of a sandwich and/or being connected to one another, preferably with a material bond. In particular, the first substrate can have a recess for the integrative accommodation of the ASIC, which is designed, for example, as a printed circuit board cavity with a sufficiently large volume that the ASIC can be arranged or embedded therein. In addition to the ASIC, further components, in particular passive components such as electrical resistors and/or I/O contacts, can also be embedded in and/or arranged on the first substrate. The housing part and/or the sound-conducting element preferably consist of a material that is different from the substrate, in particular a plastic and/or metal.

Vorteilhaft ist es, wenn die Substrate getrennt voneinander hergestellt sind. Hierbei wird der ASIC bei der Herstellung des ersten Substrates in dieses eingebettet bzw. eingekapselt. Der ASIC und/oder zusätzliche aktive und/oder passive elektronische Komponenten sind hierdurch in dem ersten Substrat vollständig integriert. Ferner ist es vorteilhaft, wenn das zweite Substrat zusammen mit dem MEMS-Schallwandler separat hergestellt ist. Hierbei kann der MEMS-Schallwandler beispielsweise auf einer Seite des zweiten Substrats, insbesondere stoffschlüssig, befestigt sein. Zusätzlich oder alternativ kann der MEMS-Schallwandler aber auch formschlüssig mit dem zweiten Substrat verbunden sein. Hierfür ist beispielsweise ein Rahmen des MEMS-Schallwandlers formschlüssig vom zweiten Substrat umgriffen. Die Membran kann jedoch frei schwingen. Nachdem jedes Modul - d.h. insbesondere das den ASIC und das erste Substrat umfassende erste Modul und/oder das den MEMS-Schallwandler und das zweite Substrat umfassende zweite Modul - in einem separaten Herstellungsschritt gefertigt wurden, werden diese in einem nachfolgenden Herstellungsschritt miteinander verbunden, insbesondere verklebt. Vorteilhafterweise kann somit die Funktionsfähigkeit der Modul vor deren endgültiger Verbindung geprüft werden, so dass der Ausschuss und infolgedessen die Herstellungskosten reduziert werden können.It is advantageous if the substrates are manufactured separately from one another. In this case, the ASIC is embedded or encapsulated in the production of the first substrate. As a result, the ASIC and/or additional active and/or passive electronic components are fully integrated in the first substrate. Furthermore, it is advantageous if the second substrate is manufactured separately together with the MEMS sound transducer. In this case, the MEMS sound transducer can be fastened, for example, on one side of the second substrate, in particular in a materially bonded manner. Additionally or alternatively, however, the MEMS sound transducer can also be connected to the second substrate in a form-fitting manner. For this purpose, for example, a frame of the MEMS sound transducer is encompassed by the second substrate in a form-fitting manner. However, the membrane can vibrate freely. After each module - ie in particular the first module comprising the ASIC and the first substrate and/or the second module comprising the MEMS sound transducer and the second substrate - has been manufactured in a separate manufacturing step, they are connected to one another in a subsequent manufacturing step, in particular glued . Advantageously, therefore, the functionality the module can be checked before its final connection, so that the scrap and consequently the manufacturing costs can be reduced.

Weitere Vorteile der Erfindung sind in den nachfolgenden Ausführungsbeispielen beschrieben. Es zeigt:

FIG. 1
ein nicht durch die beanspruchte Erfindung abgedecktes erstes Ausführungsbeispiel der Schallwandleranordnung ohne Gehäuseteil in einer perspektivischen Schnittansicht,
FIG. 2
das nicht durch die beanspruchte Erfindung abgedeckte erste Ausführungsbeispiel der Schallwandleranordnung ohne Gehäuseteil in einer seitlichen Schnittansicht,
FIG. 3
das nicht durch die beanspruchte Erfindung abgedeckte erste Ausführungsbeispiel der Schallwandleranordnung ohne Gehäuseteil in einer anderen seitlichen Schnittansicht,
FIG. 4
ein nicht durch die beanspruchte Erfindung abgedecktes zweites Ausführungsbeispiel der Schallwandleranordnung mit einem Gehäuseteil in einer perspektivischen Schnittansicht,
FIG. 5
das nicht durch die beanspruchte Erfindung abgedeckte zweite Ausführungsbeispiel der Schallwandleranordnung mit Gehäuseteil in einer seitlichen Schnittansicht,
FIG. 6
das nicht durch die beanspruchte Erfindung abgedeckte zweite Ausführungsbeispiel der Schallwandleranordnung ohne Gehäuseteil in einer anderen seitlichen Schnittansicht,
FIG. 7
ein nicht durch die beanspruchte Erfindung abgedecktes drittes Ausführungsbeispiel der Schallwandleranordnung mit Gehäuseteil in einer perspektivischen Schnittansicht,
FIG. 8
das nicht durch die beanspruchte Erfindung abgedeckte dritte Ausführungsbeispiel der Schallwandleranordnung in einer perspektivischen Explosionsansicht,
FIG. 9
das nicht durch die beanspruchte Erfindung abgedeckte dritte Ausführungsbeispiel der Schallwandleranordnung mit Gehäuse in einer perspektivischen Gesamtansicht,
FIG. 10
ein nicht durch die beanspruchte Erfindung abgedecktes viertes Ausführungsbeispiel der Schallwandleranordnung mit Gehäuse und mit porösem Material gefüllter Kavität in einer seitlichen Schnittansicht,
FIG. 11
ein nicht durch die beanspruchte Erfindung abgedecktes fünftes Ausführungsbeispiel der Schallwandleranordnung mit Gehäuse und mit porösem Material gefüllter Kavität in einer seitlichen Schnittansicht,
FIG. 12
ein nicht durch die beanspruchte Erfindung abgedecktes sechstes Ausführungsbeispiel der Schallwandleranordnung ohne Gehäuse in einer schematisch dargestellten seitlichen Schnittansicht,
FIG. 13
ein siebtes Ausführungsbeispiel der Schallwandleranordnung ohne Gehäuse jedoch mit zwei MEMS-Schallwandlern in einer schematisch dargestellten seitlichen Schnittansicht,
FIG. 14
ein achtes Ausführungsbeispiel der Schallwandleranordnung mit Gehäuse und zwei MEMS-Schallwandlern in einer seitlichen Schnittansicht,
FIG. 15
ein nicht durch die beanspruchte Erfindung abgedecktes neuntes Ausführungsbeispiel der Schallwandleranordnung ohne Gehäuseteil in einer perspektivischen Schnittansicht,
FIG. 16
das nicht durch die beanspruchte Erfindung abgedeckte neunte Ausführungsbeispiel der Schallwandleranordnung ohne Gehäuseteil in einer seitlichen Schnittansicht,
FIG. 17
das nicht durch die beanspruchte Erfindung abgedeckte neunte Ausführungsbeispiel der Schallwandleranordnung ohne Gehäuseteil in einer anderen seitlichen Schnittansicht,
FIG. 18
ein nicht durch die beanspruchte Erfindung abgedecktes zehntes Ausführungsbeispiel der Schallwandleranordnung mit einem Gehäuseteil in einer perspektivischen Schnittansicht,
FIG. 19
das nicht durch die beanspruchte Erfindung abgedeckte zehnte Ausführungsbeispiel der Schallwandleranordnung mit Gehäuseteil in einer seitlichen Schnittansicht,
FIG. 20
das nicht durch die beanspruchte Erfindung abgedeckte zehnte Ausführungsbeispiel der Schallwandleranordnung ohne Gehäuseteil in einer anderen seitlichen Schnittansicht,
FIG. 21
ein nicht durch die beanspruchte Erfindung abgedecktes elftes Ausführungsbeispiel der Schallwandleranordnung ohne Gehäuseteil in einer perspektivischen Schnittansicht,
FIG. 22
das nicht durch die beanspruchte Erfindung abgedeckte elfte Ausführungsbeispiel der Schallwandleranordnung ohne Gehäuseteil in einer seitlichen Schnittansicht,
FIG. 23
das nicht durch die beanspruchte Erfindung abgedeckte elfte Ausführungsbeispiel der Schallwandleranordnung ohne Gehäuseteil in einer anderen seitlichen Schnittansicht,
FIG. 24
ein nicht durch die beanspruchte Erfindung abgedecktes zwölftes Ausführungsbeispiel der Schallwandleranordnung mit einem Gehäuseteil in einer perspektivischen Schnittansicht,
FIG. 25
das nicht durch die beanspruchte Erfindung abgedeckte zwölfte Ausführungsbeispiel der Schallwandleranordnung mit Gehäuseteil in einer seitlichen Schnittansicht,
FIG. 26
das nicht durch die beanspruchte Erfindung abgedeckte zwölfte Ausführungsbeispiel der Schallwandleranordnung ohne Gehäuseteil in einer anderen seitlichen Schnittansicht.
Further advantages of the invention are described in the following exemplary embodiments. It shows:
FIG. 1
a not covered by the claimed invention first embodiment of the sound transducer assembly without housing part in a perspective sectional view,
FIG. 2
the first exemplary embodiment of the sound transducer arrangement, not covered by the claimed invention, without a housing part in a lateral sectional view,
FIG. 3
the first exemplary embodiment of the sound transducer arrangement, which is not covered by the claimed invention, without a housing part in another lateral sectional view,
FIG. 4
a second exemplary embodiment of the sound transducer arrangement, not covered by the claimed invention, with a housing part in a perspective sectional view,
FIG. 5
the second exemplary embodiment of the sound transducer arrangement with the housing part, which is not covered by the claimed invention, in a lateral sectional view,
FIG. 6
the second exemplary embodiment of the sound transducer arrangement, not covered by the claimed invention, without a housing part in a different lateral sectional view,
FIG. 7
a third exemplary embodiment of the sound transducer arrangement with a housing part, which is not covered by the claimed invention, in a perspective sectional view,
FIG. 8th
the third exemplary embodiment of the sound transducer arrangement, which is not covered by the claimed invention, in a perspective exploded view,
FIG. 9
the third exemplary embodiment of the sound transducer arrangement with housing, which is not covered by the claimed invention, in a perspective overall view,
FIG. 10
a fourth exemplary embodiment of the sound transducer arrangement, not covered by the claimed invention, with a housing and a cavity filled with porous material in a lateral sectional view,
FIG. 11
a fifth exemplary embodiment of the sound transducer arrangement, not covered by the claimed invention, with a housing and a cavity filled with porous material in a side sectional view,
FIG. 12
a sixth exemplary embodiment of the sound transducer arrangement without a housing, not covered by the claimed invention, in a schematically illustrated lateral sectional view,
FIG. 13
a seventh exemplary embodiment of the sound transducer arrangement without a housing but with two MEMS sound transducers in a schematically illustrated lateral sectional view,
FIG. 14
an eighth exemplary embodiment of the sound transducer arrangement with housing and two MEMS sound transducers in a side sectional view,
FIG. 15
a ninth exemplary embodiment of the sound transducer arrangement without a housing part, which is not covered by the claimed invention, in a perspective sectional view,
FIG. 16
the ninth exemplary embodiment of the sound transducer arrangement, not covered by the claimed invention, without a housing part in a lateral sectional view,
FIG. 17
the ninth exemplary embodiment of the sound transducer arrangement, which is not covered by the claimed invention, without a housing part in another lateral sectional view,
FIG. 18
a tenth exemplary embodiment of the sound transducer arrangement, not covered by the claimed invention, with a housing part in a perspective sectional view,
FIG. 19
the tenth exemplary embodiment of the sound transducer arrangement with housing part, which is not covered by the claimed invention, in a lateral sectional view,
FIG. 20
the tenth exemplary embodiment of the sound transducer arrangement without a housing part, which is not covered by the claimed invention, in another lateral sectional view,
FIG. 21
an eleventh exemplary embodiment of the sound transducer arrangement without a housing part, which is not covered by the claimed invention, in a perspective sectional view,
FIG. 22
the eleventh embodiment of the sound transducer arrangement not covered by the claimed invention without a housing part in a lateral sectional view,
FIG. 23
the eleventh exemplary embodiment of the sound transducer arrangement, which is not covered by the claimed invention, without a housing part in another lateral sectional view,
FIG. 24
a twelfth exemplary embodiment of the sound transducer arrangement, not covered by the claimed invention, with a housing part in a perspective sectional view,
FIG. 25
the twelfth exemplary embodiment of the sound transducer arrangement with housing part, which is not covered by the claimed invention, in a lateral sectional view,
FIG. 26
the twelfth exemplary embodiment of the sound transducer arrangement, which is not covered by the claimed invention, without a housing part in another lateral sectional view.

Bei der nachfolgenden Figurenbeschreibung werden, um die Beziehungen zwischen den verschiedenen Elementen zu definieren, bezugnehmend auf die jeweils in den Figuren dargestellte Lage der Objekte relative Begriffe, wie beispielsweise oberhalb, unterhalb, oben, unten, darüber, darunter, links, rechts, vertikal und horizontal, verwendet. Es versteht sich von selbst, dass sich diese Begrifflichkeiten bei einer Abweichung von der in den Figuren dargestellten Lage der Vorrichtungen und/oder Elemente verändern können. Demnach würde beispielsweise bei einer in Bezug auf die Figuren dargestellten invertierten Orientierung der Vorrichtungen und/oder Elemente ein in der nachfolgenden Figurenbeschreibung als oberhalb spezifiziertes Merkmal nunmehr unterhalb angeordnet sein. Die verwendeten Relativbegriffe dienen somit lediglich zur einfacheren Beschreibung der relativen Beziehungen zwischen den einzelnen im nachfolgenden beschriebenen Vorrichtungen und/oder Elemente.In the following description of the figures, in order to define the relationships between the various elements, relative terms such as above, below, above, below, above, below, left, right, vertical and horizontal, used. It goes without saying that these terms can change if the position of the devices and/or elements deviates from the position shown in the figures. Accordingly, for example, in the case of an inverted orientation of the devices and/or elements shown in relation to the figures, a feature specified as above in the following description of the figures would now be arranged below. The relative terms used thus only serve to simplify the description of the relative relationships between the individual devices and/or elements described below.

Die Figuren 1 bis 3 zeigen ein nicht durch die beanspruchte Erfindung abgedecktes erstes Ausführungsbeispiel einer Schallwandleranordnung 1 in verschiedenen Ansichten. Die Schallwandleranordnung 1 umfasst im Wesentlichen ein als Leiterplatte ausgebildetes erstes Substrat 10 mit einem ASIC 11 sowie ein als Leiterplatte ausgebildetes zweites Substrat 20 mit einem MEMS-Schallwandler 21. Der MEMS-Schallwandler 21 ist mit in den Figuren nicht weiter im Detail dargestellten elektrischen Kontakten mit dem ASIC 11 verbunden. Der MEMS-Schallwandler 21 kann somit über den ASIC 11 angesteuert bzw. betrieben werden. Die Schallwandleranordnung 1 hat eine im Wesentlichen rechteckige Grundform. Eine rechteckige Grundform aufweisend ist die Schallwandleranordnung einfach und kostengünstig herstellbar und für zahlreiche Anwendungszwecke geeignet. Alternativ kann die Schallwandleranordnung aber grundsätzlich auch eine andere, insbesondere eine runde, Grundform aufweisen.the Figures 1 to 3 show a first exemplary embodiment of a sound transducer arrangement 1, which is not covered by the claimed invention, in different views. The sound transducer arrangement 1 essentially comprises a first substrate 10 designed as a printed circuit board with an ASIC 11 and a second substrate 20 designed as a printed circuit board with a MEMS sound transducer 21. The MEMS sound transducer 21 is provided with electrical contacts that are not shown in detail in the figures connected to the ASIC 11. The MEMS sound transducer 21 can thus be controlled or operated via the ASIC 11 . The sound transducer arrangement 1 has an essentially rectangular basic shape. Having a rectangular basic shape, the sound transducer arrangement can be produced easily and inexpensively and is suitable for numerous application purposes. Alternatively, however, the sound transducer arrangement can in principle also have a different basic shape, in particular a round shape.

Der MEMS-Schallwandler 21 ist derart ausgebildet, dass dieser Schallwellen im hörbaren Wellenlängenspektrum erzeugen und/oder erfassen kann. Hierfür umfasst der MEMS-Schallwandler 21 neben einem MEMS-Aktuator 22 als weitere, insbesondere akustische, Komponenten eine Membran 23, eine Membranplatte 24 sowie einen Membranrahmen 25. Die Membran 23, welche zum Beispiel aus Kautschuk gefertigt ist, ist in ihrem Randbereich fest mit dem Membranrahmen 25 verbunden, während sie, insbesondere in ihrem mittleren Bereich, fest mit der Membranplatte 24 verbunden ist, wobei die Membranplatte 24 selbst nicht mit dem Membranrahmen 25 verbunden ist. Die Membran 23 überspannt somit den Membranrahmen 25 und wird insbesondere in ihrem mittleren Bereich durch die Membranplatte 24 versteift. Wenn der MEMS-Schallwandler 21 zum Beispiel als Lautsprecher fungieren soll, kann er über den ASIC 11 derart angeregt werden, dass durch den MEMS-Aktuator 22 die Membran 23 zur Erzeugung von Schallenergie gegenüber dem Membranrahmen 25 in Schwingung versetzt wird.The MEMS sound transducer 21 is designed in such a way that it can generate and/or detect sound waves in the audible wavelength spectrum. For this purpose, the MEMS sound transducer 21 comprises, in addition to a MEMS actuator 22, as additional, in particular acoustic, components, a membrane 23, a membrane plate 24 and a membrane frame 25. The membrane 23, which is made of rubber, for example, is fixed in its edge area connected to the membrane frame 25, while it is firmly connected to the membrane plate 24, in particular in its middle region, the membrane plate 24 itself not being connected to the membrane frame 25. The membrane 23 thus spans the membrane frame 25 and is reinforced by the membrane plate 24 in particular in its central region. If the MEMS transducer 21 is to act as a speaker, for example, it can be excited via the ASIC 11 in such a way that the MEMS actuator 22, the membrane 23 for generating sound energy relative to the membrane frame 25 is vibrated.

Das zweite Substrat 20 trägt den MEMS-Aktuator 22 sowie den Membranrahmen 25 mit der daran befestigten Membran 23, wobei der MEMS-Aktuator 22 unterhalb der Membran 23 angeordnet ist, und wobei das zweite Substrat 20 unterhalb der Membran 23 und des MEMS-Aktuators 22 einen Hohlraum 29 aufweist. Der Hohlraum 29 ist seitlich durch Wände 27 des zweiten Substrats 20 umgeben bzw. begrenzt, während er nach oben durch die Membran 23 verschlossen ist. Nach unten ist der Hohlraum 29 durch das erste Substrat 10 verschlossen, mit dem das zweite Substrat 20 verbunden ist. Der Hohlraum 29 bildet somit die Kavität 41 des MEMS-Schallwandlers 21 aus, welche insbesondere dazu dient, den Schalldruck des MEMS-Schallwandlers 21 zu erhöhen.The second substrate 20 carries the MEMS actuator 22 and the membrane frame 25 with the membrane 23 attached thereto, the MEMS actuator 22 being arranged below the membrane 23, and the second substrate 20 below the membrane 23 and the MEMS actuator 22 has a cavity 29 . The cavity 29 is laterally surrounded or delimited by walls 27 of the second substrate 20, while it is closed at the top by the membrane 23. The cavity 29 is closed at the bottom by the first substrate 10 to which the second substrate 20 is connected. The cavity 29 thus forms the cavity 41 of the MEMS sound transducer 21, which is used in particular to increase the sound pressure of the MEMS sound transducer 21.

Wie aus den Figuren 1 bis 3 zu erkennen ist, weist der Membranrahmen 25 im Wesentlichen den gleichen Außendurchmesser auf wie das zweite Substrat 20, während der MEMS-Aktuator 22 einen kleineren Außendurchmesser als das Substrat 20 besitzt. Wie aus den Figuren 1 und 2 im Vergleich zur Figur 3 zu erkennen ist, sind die sich im Wesentlichen gegenüberstehenden Wandabschnitte 27a des zweiten Substrats 20 dicker ausgebildet als die Wandabschnitte 27b des zweiten Substrats 20, wobei die dickeren Wandabschnitte 27a gegenüber den Wandabschnitten 27b in den Hohlraum 29 vorspringen. Nur auf den von den Wandabschnitten 27a gebildeten Vorsprüngen 28 liegt der MEMS-Aktuator 22 auf, während der Membranrahmen 25 sowohl auf den Wandabschnitten 27a als auch 27b, insbesondere vollumfänglich, aufliegt. Somit ist der MEMS-Aktuator 22 seitlich von dem Membranrahmen 25 umgeben.How from the Figures 1 to 3 can be seen, the membrane frame 25 has essentially the same outer diameter as the second substrate 20, while the MEMS actuator 22 has a smaller outer diameter than the substrate 20. How from the figures 1 and 2 in comparison to figure 3 As can be seen, the essentially opposing wall sections 27a of the second substrate 20 are thicker than the wall sections 27b of the second substrate 20, the thicker wall sections 27a projecting into the cavity 29 compared to the wall sections 27b. The MEMS actuator 22 only rests on the projections 28 formed by the wall sections 27a, while the membrane frame 25 rests, in particular over the entire circumference, on both the wall sections 27a and 27b. Thus, the MEMS actuator 22 is surrounded by the membrane frame 25 on the side.

Der MEMS-Schallwandler 21 und insbesondere der MEMS-Aktuator 22 und/oder der Membranrahmen 25 kann mit dem zweiten Substrat 20 verklebt sein. Ferner kann das zweite Substrat 20 mit dem ersten Substrat 10 verklebt sein.The MEMS sound transducer 21 and in particular the MEMS actuator 22 and/or the membrane frame 25 can be glued to the second substrate 20 be. Furthermore, the second substrate 20 can be glued to the first substrate 10 .

Um beim Schwingen der Membran 23 einen Druckausgleich zwischen der Kavität 41 und der Umgebung gewährleisten zu können, weist die Schallwandleranordnung 1 zumindest einen Druckausgleichskanal 70 auf, der in diesem Ausführungsbeispiel eine Ausgleichsöffnung 26 umfasst, die vorzugsweise nicht an einem der dicken Wandabschnitte 27, sondern an einem der dünnen Wandabschnitte 27 des zweiten Substrats 20 angeordnet ist. Zum Druckausgleich kann somit beim Senken der Membran 23 Luft aus der durch den Hohlraum 29 gebildeten Kavität 41 durch den Druckausgleichkanal 70 ausströmen. In analoger Art und Weise kann aber auch beim Heben der Membran 23 Luft über den Druckausgleichskanal 70 in die Kavität 41 einströmen.In order to be able to ensure pressure equalization between the cavity 41 and the environment when the membrane 23 vibrates, the sound transducer arrangement 1 has at least one pressure equalization channel 70, which in this exemplary embodiment comprises an equalization opening 26, which is preferably not on one of the thick wall sections 27, but on one of the thin wall portions 27 of the second substrate 20 is arranged. To equalize the pressure, air can flow out of the cavity 41 formed by the hollow space 29 through the pressure equalization channel 70 when the membrane 23 is lowered. In an analogous manner, however, air can also flow into the cavity 41 via the pressure compensation channel 70 when the membrane 23 is lifted.

Das erste Substrat 10 weist einen Hohlraum 13a auf, der im Wesentlichen vollständig geschlossen ist. In dem Hohlraum 13a ist der ASIC 11 angeordnet. Der ASIC 11 ist somit vollständig in dem ersten Substrat 10 eingebettet. Zusätzlich zum ASIC 11 weist die Schallwandleranordnung 1 elektrische, insbesondere passive, Zusatzkomponenten 12a, 12b, wie zum Beispiel elektrische Widerstände und/oder E/A-Kontakte, auf. Diese Zusatzkomponenten 12a, 12b sind ebenfalls in das erste Substrat 10 eingebettet, wobei sie in dem weiteren Hohlraum 13b des Substrats 10, welcher ebenfalls im Wesentlichen vollständig verschlossen ist, angeordnet sind. Alternativ könnten die elektronischen Zusatzkomponenten 12a, 12b aber auch zusammen mit dem ASIC 11 in dem Hohlraum 13a angeordnet sein.The first substrate 10 has a cavity 13a which is essentially completely closed. The ASIC 11 is arranged in the cavity 13a. The ASIC 11 is thus completely embedded in the first substrate 10 . In addition to the ASIC 11, the sound transducer arrangement 1 has electrical, in particular passive, additional components 12a, 12b, such as electrical resistors and/or I/O contacts. These additional components 12a, 12b are also embedded in the first substrate 10, being arranged in the further cavity 13b of the substrate 10, which is also essentially completely closed. Alternatively, the additional electronic components 12a, 12b could also be arranged together with the ASIC 11 in the cavity 13a.

In den Figuren 4 bis 26 sind weitere Ausführungsformen der Schallwandleranordnung 1 gezeigt, wobei jeweils im Wesentlichen auf die Unterschiede in Bezug auf die bereits beschriebene erste Ausführungsform eingegangen wird. So werden bei der nachfolgenden Beschreibung der weiteren Ausführungsformen für gleiche Merkmale gleiche Bezugszeichen verwendet. Sofern diese nicht nochmals detailliert erläutert werden, entspricht deren Ausgestaltung und Wirkweise den vorstehend bereits beschriebenen Merkmalen. Die nachfolgend beschriebenen Unterschiede können mit den Merkmalen der jeweils vorstehenden und nachfolgenden Ausführungsbeispiele kombiniert werden.In the Figures 4 to 26 further embodiments of the sound transducer arrangement 1 are shown, with the differences in relation to the first embodiment already described being essentially discussed in each case. In the following description of the further embodiments, the same reference symbols are used for the same features. Provided these are not explained in detail again, their design and mode of operation corresponds to the features already described above. The differences described below can be combined with the features of the respective preceding and following exemplary embodiments.

Die Figuren 4 bis 6 zeigen ein nicht durch die beanspruchte Erfindung abgedecktes zweites Ausführungsbeispiel der Schallwandleranordnung 1 in verschiedenen Ansichten. Im Unterschied zu dem ersten Ausführungsbeispiel ist bei dem zweiten Ausführungsbeispiel der Schallwandleranordnung 1 zusätzlich ein Gehäuseteil 50 vorgesehen. Dieses Gehäuseteil 50 bietet insbesondere einen Schutz für den MEMS-Schallwandler 21. Das Gehäuseteil 50 weist einen Hohlraum 53 auf, in dem das zweite Substrat 20 und der MEMS-Schallwandler 21 im Wesentlichen vollständig aufgenommen sind, und der nach unten von dem ersten Substrat 10 verschlossen ist, mit dem das Gehäuseteil 50 verbunden ist.the Figures 4 to 6 show a second embodiment of the sound transducer arrangement 1, which is not covered by the claimed invention, in different views. In contrast to the first exemplary embodiment, a housing part 50 is additionally provided in the second exemplary embodiment of the sound transducer arrangement 1 . In particular, this housing part 50 offers protection for the MEMS sound transducer 21. The housing part 50 has a cavity 53 in which the second substrate 20 and the MEMS sound transducer 21 are essentially completely received, and which extends downwards from the first substrate 10 is closed, with which the housing part 50 is connected.

Das Gehäuseteil 50 weist zudem eine akustische Ein-/Austrittsöffnung 51 auf, welche seitlich an der Außenfläche 55 des Gehäuseteils und damit auch der Schallwandleranordnung angeordnet ist. Außerdem ist das Gehäuseteil 50 mit dem ersten Substrat 10 derart verbunden und insbesondere auch derart dimensioniert, dass zwischen dem Gehäuseteil 50 und dem zweiten Substrat 20 mit dem MEMS-Schallwandler 21 zumindest ein erster Abschnitt 62 eines Schallleitkanals 61 ausgebildet ist. Ein zweiter Abschnitt 63 des Schallleitkanals 61 ist im Gehäuseteil 50 selbst ausgebildet. Hierzu weist das Gehäuseteil 50 im Bereich der akustischen Ein-/Austrittsöffnung 51 eine rohrartige Auskragung 52 auf. Hierdurch sind zur Ausbildung des Schallleitkanals 61 keine zusätzlichen Komponenten notwendig. Mit anderen Worten ausgedrückt wird der Schallleitkanal 61 zumindest teilweise dadurch gebildet, dass der Hohlraum 53 des Gehäuseteils 50 nicht vollständig von dem zweiten Substrat 20 und dem MEMS-Schallwandler 21 ausgefüllt wird.The housing part 50 also has an acoustic inlet/outlet opening 51 which is arranged laterally on the outer surface 55 of the housing part and thus also on the sound transducer arrangement. In addition, the housing part 50 is connected to the first substrate 10 and in particular also dimensioned such that at least a first section 62 of a sound-conducting channel 61 is formed between the housing part 50 and the second substrate 20 with the MEMS sound transducer 21 . A second section 63 of the sound-conducting channel 61 is formed in the housing part 50 itself. For this purpose, the housing part 50 has a tubular projection 52 in the area of the acoustic inlet/outlet opening 51 . As a result, no additional components are required to form the sound-conducting channel 61 . In other words, the sound conduction channel 61 is at least partially formed in that the cavity 53 of the housing part 50 is not completely filled by the second substrate 20 and the MEMS sound transducer 21 .

Mittels des Schallleitkanals 61 kann Schall von dem MEMS-Schallwandler 21 zur akustischen Ein-/Austrittsöffnung 51 und/oder umgekehrt gelenkt und/oder verstärkt werden. Dank des Schallleitkanals 61 kann die akustische Ein-/Austrittsöffnung 51 dabei im Wesentlichen beliebig an der Außenfläche 55 oder einer anderen Außenfläche der Schallwandleranordnung 1, insbesondere zu einer einbauorientierten Oberseite und/oder zu einer Seitenfläche, positioniert sein.Sound can be directed and/or amplified by means of the sound conduction channel 61 from the MEMS sound transducer 21 to the acoustic entry/exit opening 51 and/or vice versa. Thanks to the sound conduction channel 61, the acoustic inlet/outlet opening 51 can be positioned essentially anywhere on the outer surface 55 or another outer surface of the sound transducer arrangement 1, in particular on an installation-oriented upper side and/or on a side surface.

Das Gehäuseteil 50 weist ferner eine akustische Ausgleichsöffnung 56 auf, welche seitlich an der Außenfläche 58 des Gehäuseteils 50 angeordnet ist. Die Ausgleichsöffnung 56 korrespondiert dabei mit der Ausgleichsöffnung 26 und gehört wie diese zum Druckausgleichskanal 70 der Schallwandleranordnung 1. Die Ausgleichsöffnung 56 besitzt in diesem Beispiel einen größeren Durchmesser als die Ausgleichsöffnung 26. Damit durch den Druckausgleichskanal 70 kein Schmutz und/oder keine Flüssigkeit in die Kavität 41 gelangen können, ist die Ausgleichsöffnung 56 in diesem Beispiel mit einem elastischen Verschlusselement 57 abgedeckt. Die Druckausgleichsfunktionalität ist dennoch gewährleistet, da sich das elastische Verschlusselement 57 gemäß dem in der Kavität 41 herrschenden Druck verformen kann.The housing part 50 also has an acoustic equalization opening 56 which is arranged laterally on the outer surface 58 of the housing part 50 . The equalization opening 56 corresponds to the equalization opening 26 and, like this, belongs to the pressure equalization channel 70 of the sound transducer arrangement 1. In this example, the equalization opening 56 has a larger diameter than the equalization opening 26. This means that no dirt and/or liquid can enter the cavity through the pressure equalization channel 70 41, the compensation opening 56 is covered with an elastic closure element 57 in this example. The pressure equalization functionality is nevertheless ensured since the elastic closure element 57 can deform according to the pressure prevailing in the cavity 41 .

Die Figuren 7 bis 9 zeigen ein nicht durch die beanspruchte Erfindung abgedecktes drittes Ausführungsbeispiel der Schallwandleranordnung 1 in verschiedenen Ansichten. Als wesentlicher Unterschied gegenüber dem ersten und zweiten Ausführungsbeispiel ist bei dem dritten Ausführungsbeispiel die Kavität 41 jeweils zum Teil durch einen Hohlraum des ersten und des zweiten Substrats 10, 20 ausgebildet.the Figures 7 to 9 show a third exemplary embodiment of the sound transducer arrangement 1, which is not covered by the claimed invention, in different views. As an essential difference compared to the first and second exemplary embodiment, in the third exemplary embodiment, the cavity 41 is in each case partially formed by a hollow space in the first and second substrate 10, 20.

Wie insbesondere aus den Figuren 7 und 8 zu erkennen ist, weist der Membranrahmen 25 im Wesentlichen den gleichen Außendurchmesser auf wie der MEMS-Aktuator 22, wobei diese Außendurchmesser kleiner sind als der Au-ßendurchmesser des zweiten Substrats 20. Allerdings weisen die Wände 27 des zweiten Substrats 20, welche den Hohlraum 29 des zweiten Substrats seitlich begrenzen, an ihrem oberen Bereich jeweils in den Hohlraum 29 vorspringende Wandabschnitte 27b auf, die eine vorzugsweise vollumfängliche Auflage 28 für den MEMS-Aktuator 22 bereitstellen, wobei auf dem äußeren Randbereich des MEMS-Aktuators 22 ferner der Membranrahmen 25 aufliegt. Somit trägt auch in diesem Beispiel das zweite Substrat 20 den MEMS-Aktuator 22 sowie den Membranrahmen 25 mit der daran befestigten Membran 23, wobei der MEMS-Aktuator 22 unterhalb der Membran 23 angeordnet ist und wobei das zweite Substrat 20 unterhalb der Membran 23 und des MEMS-Aktuators 22 den Hohlraum 29 aufweist, der nach oben durch die Membran 23 verschlossen ist.As in particular from the figures 7 and 8th can be seen, the membrane frame 25 has essentially the same outer diameter as the MEMS actuator 22, with this outer diameter being smaller than the outer diameter of the second substrate 20. However, the walls 27 of the second substrate 20, which contain the cavity 29 of the second substrate laterally delimiting wall sections 27b projecting into the cavity 29 at their upper area, which provide a preferably full-circumferential support 28 for the MEMS actuator 22, the membrane frame 25 also resting on the outer edge area of the MEMS actuator 22. Thus, in this example, too, the second substrate 20 carries the MEMS actuator 22 and the membrane frame 25 with the membrane 23 attached thereto, with the MEMS actuator 22 being arranged below the membrane 23 and with the second substrate 20 below the membrane 23 and the MEMS actuator 22 has the cavity 29 which is closed at the top by the membrane 23.

Nach unten ist der Hohlraum 29 des zweiten Substrats 20 offen und grenzt an den nach oben offenen Hohlraum 15 des ersten Substrats 10. Der Hohlraum 15 ist seitlich durch Wände 16 des ersten Substrats begrenzt und nach unten durch das erste Substrat 10 verschlossen. Die Hohlräume 15 und 29 weisen den gleichen Durchmesser auf und die unteren freien Enden der Wände 27 korrespondieren mit den oberen freien Enden der Wände 16. Im montierten Zustand der Schallwandleranordnung 1 sind die Wände 16 des ersten Substrats 10 mit den Wänden 27 des zweiten Substrats 20 verbunden und insbesondere verklebt, wobei der Hohlraum 15 des ersten Substrats und der Hohlraum 29 des zweiten Substrats übereinander angeordnet sind und dann gemeinsam die Kavität 41 für den MEMS-Schallwandler 21 bilden.The cavity 29 of the second substrate 20 is open at the bottom and borders on the cavity 15 of the first substrate 10, which is open at the top. The cavities 15 and 29 have the same diameter and the lower free ends of the walls 27 correspond to the upper free ends of the walls 16. In the installed state of the sound transducer arrangement 1, the walls 16 of the first substrate 10 are connected to the walls 27 of the second substrate 20 connected and in particular glued, the cavity 15 of the first substrate and the cavity 29 of the second substrate being arranged one above the other and then together forming the cavity 41 for the MEMS sound transducer 21 .

Ein Druckausgleichskanal 70 ist für dieses Beispiel in den Figuren nicht dargestellt, kann aber vorzugsweise vorgesehen sein.A pressure compensation channel 70 is not shown in the figures for this example, but can preferably be provided.

Das Gehäuseteil 50 ist in diesem Beispiel sehr sparsam ausgebildet und weist neben der Außenfläche 55, an welcher die akustische Ein-/Austrittsöffnung 51 mit der rohrartigen Auskragung 52 angeordnet ist, im Wesentlichen nur mehr die eine weitere Außenfläche 54 auf, welche insbesondere einen Schutz für den MEMS-Schallwandler 21 bietet.The housing part 50 is very economical in this example and, in addition to the outer surface 55 on which the acoustic inlet/outlet opening 51 with the tubular projection 52 is arranged, essentially only has one further outer surface 54, which in particular provides protection for the MEMS transducer 21 provides.

Das Gehäuseteil 50 ist mit dem ersten Substrat 10 und dem zweiten Substrat 20 dennoch derart verbunden, dass zwischen dem Gehäuseteil 50 und dem zweiten Substrat 20 mit dem MEMS-Schallwandler 21 sowie dem ersten Substrat 10 zumindest ein erster Abschnitt 62 eines Schallleitkanals 61 ausgebildet ist. Der zweite Abschnitt 63 des Schallleitkanals 61 ist auch in diesem Beispiel im Gehäuseteil 50 selbst und insbesondere durch die rohrartige Auskragung 52 ausgebildet.The housing part 50 is nevertheless connected to the first substrate 10 and the second substrate 20 in such a way that at least a first section 62 of a sound duct 61 is formed between the housing part 50 and the second substrate 20 with the MEMS sound transducer 21 and the first substrate 10. In this example, too, the second section 63 of the sound-conducting channel 61 is formed in the housing part 50 itself and in particular by the tubular projection 52 .

Zur weiteren Verbesserung der Schallleitung, sowie insbesondere zur Bündelung des Schalls, ist in diesem Beispiel das Schallleitelement 64 mit einer konkaven Schallleitkante 65 vorgesehen, welches zwischen dem Gehäuseteil 50 und dem ersten und zweiten Substrat innerhalb des Schallleitkanals 61 angeordnet ist. Genauer gesagt ist das Schallleitelement 64 im Übergangsbereich zwischen dem ersten und zweiten Abschnitt 62, 63 des Schallleitkanals 61 angeordnet. Das Schallleitelement ist hier als einzelne Komponente ausgebildet. Alternativ kann es aber auch am Gehäuseteil 50 und/oder an einem Substrat angeformt sein.To further improve the sound conduction and in particular to focus the sound, the sound-conducting element 64 is provided with a concave sound-conducting edge 65 in this example, which is arranged between the housing part 50 and the first and second substrate within the sound-conducting channel 61 . More precisely, the sound-conducting element 64 is arranged in the transition area between the first and second sections 62, 63 of the sound-conducting channel 61. The sound-conducting element is designed here as a single component. Alternatively, however, it can also be formed on the housing part 50 and/or on a substrate.

Das Schallleitelement 64 ist insbesondere in den Figuren 8 und 9 gut zu erkennen. Die Figur 8 zeigt die Schallwandleranordnung 1 des dritten Ausführungsbeispiels in einer Explosionsansicht. Dadurch sind neben dem Schallleitelement 64 mit der konkaven Schallleitkante 65 auch die anderen Komponenten der Schallwandleranordnung 1 wie zum Beispiel der ASIC 11, die Substrate 10 und 20 sowie vor allem der MEMS-Aktuator 22, die Membran 23 an dem Membranrahmen 25 und die Membranplatte 24 sehr gut erkennbar. In der Figur 9 ist das Gehäuseteil 50 halbtransparent dargestellt, so dass die geschützt dahinter befindlichen Komponenten der Schallwandleranordnung 1 noch gut erkennbar sind.The sound-conducting element 64 is particularly in the Figures 8 and 9 clearly visible. the figure 8 shows the sound transducer arrangement 1 of the third exemplary embodiment in an exploded view. As a result, in addition to the sound-conducting element 64 with the concave sound-conducting edge 65, the other components of the sound transducer arrangement 1, such as the ASIC 11, the substrates 10 and 20 and, above all, the MEMS actuator 22, the membrane 23 on the membrane frame 25 and the membrane plate 24 very recognizable. In the figure 9 the housing part 50 is shown semi-transparent, so that the protected components of the sound transducer arrangement 1 located behind it can still be clearly seen.

Die Figur 10 zeigt ein nicht durch die beanspruchte Erfindung abgedecktes viertes Ausführungsbeispiel der Schallwandleranordnung 1. Im Unterschied zu dem dritten Ausführungsbeispiel ist bei dem vierten Ausführungsbeispiel der Schallwandleranordnung 1 die Kavität 41 mit einem porösem Material 5 zumindest annähernd vollständig ausgefüllt.the figure 10 shows a fourth exemplary embodiment of the sound transducer arrangement 1, which is not covered by the claimed invention. In contrast to the third exemplary embodiment, in the fourth exemplary embodiment of the sound transducer arrangement 1, the cavity 41 is at least approximately completely filled with a porous material 5.

Die Figur 11 zeigt ein nicht durch die beanspruchte Erfindung abgedecktes fünftes Ausführungsbeispiel der Schallwandleranordnung 1. Im Unterschied zu dem zweiten Ausführungsbeispiel ist bei dem fünften Ausführungsbeispiel der Schallwandleranordnung 1 die Kavität 41 mit einem porösem Material 5 zumindest annähernd vollständig ausgefüllt.the figure 11 shows a fifth exemplary embodiment of the sound transducer arrangement 1 not covered by the claimed invention. In contrast to the second exemplary embodiment, in the fifth exemplary embodiment of the sound transducer arrangement 1 the cavity 41 is at least almost completely filled with a porous material 5.

Das Füllen der Kavität 41 des MEMS-Schallwandlers 21 bewirkt eine effektive Vergrößerung der Oberfläche innerhalb der Kavität und eine virtuelle Vergrößerung des Kavitätsvolumens, wodurch ein größerer Schalldruck und eine bessere Tieftonwiedergabe erreichbar sind.The filling of the cavity 41 of the MEMS sound transducer 21 causes an effective increase in the surface area within the cavity and a virtual increase in the volume of the cavity, as a result of which greater sound pressure and better bass reproduction can be achieved.

Die Figur 12 zeigt ein nicht durch die beanspruchte Erfindung abgedecktes sechstes Ausführungsbeispiel der Schallwandleranordnung 1. Hierbei handelt es sich um eine rein schematische Darstellung der Schallwandleranordnung 1, welche ein erstes Substrat 10 mit einem ASIC 11 und ein zweites Substrat 20 mit einem MEMS-Schallwandler 21 umfasst, jedoch kein Gehäuse aufweist. Von dem MEMS-Schallwandler 21 ist hier nur der MEMS-Aktuator 22 gezeigt.the figure 12 shows a sixth exemplary embodiment of the sound transducer arrangement 1 that is not covered by the claimed invention. This is a purely schematic representation of the sound transducer arrangement 1, which comprises a first substrate 10 with an ASIC 11 and a second substrate 20 with a MEMS sound transducer 21, however has no housing. Only the MEMS actuator 22 of the MEMS sound transducer 21 is shown here.

Sowohl das erste Substrat 10 als auch das zweite Substrat 20 weisen Leiterbahnen 7 zur elektrischen Verbindung der einzelnen Komponenten, wie insbesondere ASIC 11 und MEMS-Aktuator 21, auf. Die Leiterbahnen 7 des ersten Substrats 10 sind mit den Leiterbahnen 7 des zweiten Substrats 20 mittels Lötverbindungen 8 oder elektrisch leitfähigem Klebstoff 8 verbunden. Zusätzlich zu diesen elektrisch leitenden Verbindungen 8 können die beiden Substrate 10, 20 noch auf andere Weise formschlüssig, kraftschlüssig und/oder stoffschlüssig miteinander verbunden sein.Both the first substrate 10 and the second substrate 20 have conductor tracks 7 for electrically connecting the individual components, such as ASIC 11 and MEMS actuator 21 in particular. The conductor tracks 7 of the first substrate 10 are connected to the conductor tracks 7 of the second substrate 20 by means of soldered connections 8 or electrically conductive adhesive 8 . In addition to these electrically conductive connections 8, the two substrates 10, 20 can also be connected to one another in other ways in a form-fitting, force-fitting and/or cohesive manner.

Das zweite Substrat 20 weist einen Hohlraum 29 auf, der seitlich durch Wände 27 des zweiten Substrats 20 umgeben bzw. begrenzt und nach unten durch das erste Substrat 10 verschlossen ist. Die Wände 27 weisen in den Hohlraum 29 vorspringende Wandabschnitte 27a auf, die eine Auflage 28 für den MEMS-Aktuator 22, welcher einen kleineren Außendurchmesser als das zweite Substrat 20 besitzt, bereitstellen. Durch die zu dem MEMS-Aktuator 22 gehörenden, jedoch hier nicht gezeigten, weiteren akustischen Komponenten des MEMS-Schallwandlers ist der Hohlraum 29 nach oben verschlossen. Der Hohlraum 29 bildet somit die Kavität 41 des MEMS-Schallwandlers aus.The second substrate 20 has a cavity 29 which is surrounded or delimited at the side by walls 27 of the second substrate 20 and is closed off at the bottom by the first substrate 10 . The walls 27 have wall sections 27a projecting into the cavity 29, which provide a support 28 for the MEMS actuator 22, which has a smaller outer diameter than the second substrate 20. The cavity 29 is closed at the top by the additional acoustic components of the MEMS sound transducer that belong to the MEMS actuator 22 but are not shown here. The cavity 29 thus forms the cavity 41 of the MEMS sound transducer.

Die Figur 13 zeigt ein siebtes Ausführungsbeispiel der Schallwandleranordnung 1. Hierbei handelt es sich wiederum um eine rein schematische Darstellung der Schallwandleranordnung 1. Im Unterschied zu der sechsten Ausführungsform umfasst die Schallwandleranordnung 1 dieses siebten Ausführungsbeispiels zusätzlich ein drittes Substrat 30 mit einem zweiten MEMS-Schallwandler, von dem hier nur der MEMS-Aktuator 32 gezeigt ist.the figure 13 shows a seventh embodiment of the sound transducer arrangement 1. This is again a purely schematic representation of the sound transducer arrangement 1. In contrast to the sixth embodiment, the sound transducer arrangement 1 of this seventh exemplary embodiment also includes a third substrate 30 with a second MEMS sound transducer, of which here only the MEMS actuator 32 is shown.

Das erste Substrat 10 ist dabei zwischen dem zweiten Substrat 20 und dem dritten Substrat 30 angeordnet. Das dritte Substrat 30 mit dem zweiten MEMS-Aktuator 32 ist im Wesentlichen wie das zweite Substrat 20 mit dem ersten MEMS-Aktuator 22 aufgebaut, jedoch ist das dritte Substrat 30 im Vergleich zum zweiten Substrat 20 um 180° gewendet angeordnet.In this case, the first substrate 10 is arranged between the second substrate 20 and the third substrate 30 . The third substrate 30 with the second MEMS actuator 32 is constructed essentially like the second substrate 20 with the first MEMS actuator 22, but the third substrate 30 is arranged rotated by 180° compared to the second substrate 20.

Es weist also auch das dritte Substrat 30 Leiterbahnen 7 zur elektrischen Verbindung der einzelnen Komponenten auf. Die Leiterbahnen 7 des dritten Substrats 30 sind ebenfalls mit den Leiterbahnen 7 des ersten Substrats mittels Lötverbindungen 8 oder elektrisch leitfähigem Klebstoff 8 verbunden. Zusätzlich zu diesen elektrisch leitenden Verbindungen 8, können auch die beiden Substrate 10, 30 noch auf andere Weise formschlüssig, kraftschlüssig und/oder stoffschlüssig miteinander verbunden sein.The third substrate 30 therefore also has conductor tracks 7 for the electrical connection of the individual components. The conductor tracks 7 of the third substrate 30 are also connected to the conductor tracks 7 of the first substrate by means of soldered connections 8 or electrically conductive adhesive 8 . In addition to these electrically conductive connections 8, the two substrates 10, 30 can also be connected to one another in another way in a form-fitting, force-fitting and/or cohesive manner.

Das dritte Substrat 30 weist einen Hohlraum 39 auf, der seitlich durch die Wände 37 des dritten Substrats 30 umgeben bzw. begrenzt und nach oben durch das erste Substrat 10 verschlossen ist. Durch die zu dem zweiten MEMS-Aktuator 32 gehörenden, jedoch hier nicht gezeigten, weiteren akustischen Komponenten des zweiten MEMS-Schallwandlers 31 ist der Hohlraum 39 nach unten verschlossen. Der Hohlraum 39 bildet somit die zweite Kavität 42 des zweiten MEMS-Schallwandlers aus.The third substrate 30 has a cavity 39 which is laterally surrounded or delimited by the walls 37 of the third substrate 30 and is closed at the top by the first substrate 10 . The hollow space 39 is closed at the bottom by the further acoustic components of the second MEMS sound transducer 31 which belong to the second MEMS actuator 32 but are not shown here. The cavity 39 thus forms the second cavity 42 of the second MEMS sound transducer.

Bei diesem siebten Ausführungsbeispiel der Schallwandleranordnung 1 sind die erste und die zweite Kavität 41, 42 zwar separat, jedoch im Wesentlichen mit den gleichen charakteristischen Eigenschaften wie beispielsweise Abmaße und Volumen ausgebildet. Dabei sind die beiden Kavitäten 41, 42 durch eine Zwischenwand 17 voneinander getrennt, die durch das erste Substrat 10 bereitgestellt wird, so dass die beiden Kavitäten 41, 42 sich gegenseitig nicht beeinflussen. Optional kann die Zwischenwand aber auch zumindest eine sich von der ersten Kavität 41 zur zweiten Kavität 42 erstreckende Verbindungsöffnung aufweisen, welche hier jedoch nicht gezeigt ist. Diese Verbindungsöffnung ermöglicht dann eine Strömungsverbindung zwischen den beiden Kavitäten, so dass das Volumen der einen Kavität durch das Volumen der jeweils anderen Kavität vergrößert wird.In this seventh exemplary embodiment of the sound transducer arrangement 1, the first and the second cavity 41, 42 are formed separately, but essentially with the same characteristic properties such as, for example, dimensions and volume. The two cavities 41, 42 are separated from one another by an intermediate wall 17, which is provided by the first substrate 10, so that the two cavities 41, 42 do not affect one another. Optionally, however, the intermediate wall can also have at least one connection opening extending from the first cavity 41 to the second cavity 42, which is not shown here, however. This connection opening then enables a flow connection between the two cavities, so that the volume of one cavity is increased by the volume of the other cavity in each case.

Die Figur 14 zeigt ein achtes Ausführungsbeispiel der Schallwandleranordnung 1. Im Unterschied zu dem dritten Ausführungsbeispiel umfasst die Schallwandleranordnung 1 dieses achten Ausführungsbeispiels zusätzlich ein drittes Substrat 30 mit einem zweiten MEMS-Schallwandler 31.the figure 14 shows an eighth exemplary embodiment of the sound transducer arrangement 1. In contrast to the third exemplary embodiment, the sound transducer arrangement 1 of this eighth exemplary embodiment additionally includes a third substrate 30 with a second MEMS sound transducer 31.

Das erste Substrat 10 ist dabei zwischen dem zweiten Substrat 20 und dem dritten Substrat 30 angeordnet. Das dritte Substrat 30 mit dem zweiten MEMS- Schallwandler 31 ist im Wesentlichen wie das zweite Substrat 20 mit dem ersten MEMS-Schallwandler 21 aufgebaut, jedoch ist das dritte Substrat 30 im Vergleich zum zweiten Substrat 20 um 180° gewendet angeordnet. Analog zu dem Hohlraum 15 an seiner Oberseite weist das erste Substrat 10 an seiner Unterseite einen Hohlraum 18 auf, der seitlich durch Wände 19 des ersten Substrats begrenzt und nach oben durch das erste Substrat 10 verschlossen ist. Nach unten ist der Hohlraum 18 offen und grenzt an den nach oben offenen Hohlraum 39 des dritten Substrats 30. Der Hohlraum 39 ist seitlich durch die Wände 37 des dritten Substrats 30 umgeben bzw. begrenzt und nach unten durch die Membran 33 des zweiten MEMS-Schallwandlers 31 verschlossen. Die Hohlräume 18 und 39 weisen den gleichen Durchmesser auf und die unteren freien Enden der Wände 19 korrespondieren mit den oberen freien Enden der Wände 37. Im montierten Zustand der Schallwandleranordnung 1 sind die Wände 19 des ersten Substrats 10 mit den Wänden 37 des dritten Substrats 30 verbunden und insbesondere verklebt, wobei der Hohlraum 18 des ersten Substrats und der Hohlraum 39 des dritten Substrats übereinander angeordnet sind und dann gemeinsam die Kavität 42 für den MEMS-Schallwandler 31 bilden.In this case, the first substrate 10 is arranged between the second substrate 20 and the third substrate 30 . The third substrate 30 with the second MEMS sound transducer 31 is constructed essentially like the second substrate 20 with the first MEMS sound transducer 21, but the third substrate 30 is arranged turned by 180° compared to the second substrate 20. Analogous to the cavity 15 on its upper side, the first substrate 10 has a cavity 18 on its underside, which is delimited laterally by walls 19 of the first substrate and is closed at the top by the first substrate 10 . The cavity 18 is open at the bottom and borders on the cavity 39 of the third substrate 30, which is open at the top. The cavity 39 is laterally surrounded or delimited by the walls 37 of the third substrate 30 and at the bottom by the membrane 33 of the second MEMS sound transducer 31 closed. The cavities 18 and 39 have the same diameter and the lower free ends of the walls 19 correspond to the upper free ends of the walls 37. In the mounted state of the sound transducer arrangement 1, the walls 19 of the first substrate 10 are connected to the walls 37 of the third substrate 30 connected and in particular glued, the cavity 18 of the first substrate and the cavity 39 of the third substrate being arranged one above the other and then together forming the cavity 42 for the MEMS sound transducer 31 .

Im Unterschied zu dem siebten Ausführungsbeispiel weisen die erste und die zweite Kavität 41, 42 bei diesem achten Ausführungsbeispiel unterschiedliche charakteristische Eigenschaften und insbesondere unterschiedliche Abmaße sowie unterschiedliche Kavitätsvolumen auf. Dies ist im Wesentlichen allein dadurch bedingt, dass die Wände 16 an der Oberseite des ersten Substrats 10 höher ausgebildet sind als die Wände 19 an der Unterseite des ersten Substrats 10.In contrast to the seventh exemplary embodiment, the first and second cavities 41, 42 in this eighth exemplary embodiment have different characteristic properties and, in particular, different dimensions and different cavity volumes. This is essentially solely due to the fact that the walls 16 on the upper side of the first substrate 10 are higher than the walls 19 on the underside of the first substrate 10.

Der erste und der zweite MEMS-Schallwandler 21, 31 werden bereits aufgrund der unterschiedlich ausgebildeten Kavitäten 41, 42, auch bei ansonsten gleichen Bedingungen, ein unterschiedliches Klangverhalten erkennen lassen. Alternativ oder ergänzend lässt sich das Klangverhalten der beiden MEMS-Schallwandler zum Beispiel auch durch spezifische Ausgestaltung der Membranen 23, 33 und/oder der MEMS-Aktuatoren 22, 32 gezielt beeinflussen. Somit kann zum Beispiel einer der MEMS-Schallwandler als Tieftöner und der andere MEMS-Schallwandler als Hochtöner fungieren, so dass eine derart ausgestattete Schallwandleranordnung Schall in einer größere Bandweite erzeugen kann als etwa eine Schallwandleranordnung gemäß dem dritten Ausführungsbeispiel.The first and second MEMS sound transducers 21, 31 will already reveal a different sound behavior due to the differently designed cavities 41, 42, even under otherwise identical conditions. Alternatively or additionally, the sound behavior of the two MEMS sound transducers can also be influenced in a targeted manner, for example, by specifically designing the membranes 23, 33 and/or the MEMS actuators 22, 32. Thus, for example, one of the MEMS transducers can act as a woofer and the other MEMS transducer can act as a tweeter, so that a sound transducer arrangement equipped in this way can generate sound in a larger bandwidth than, for example, a sound transducer arrangement according to the third exemplary embodiment.

Die durch das erste Substrat 10 bereitgestellte Zwischenwand 17, welche die beiden Kavitäten 41, 42 voneinander trennt, weist vier Versteifungselemente 14 auf, die als Rippen ausgebildet sind und der Stabilisierung der Zwischenwand 17 dienen. Eine Verformung und/oder ein Mitschwingen der Zwischenwand 17, insbesondere während des Betriebs der Schallwandleranordnung 1, kann dadurch wesentlich reduziert oder sogar verhindert werden. Die Zwischenwand 17 weist gemäß dem vorliegenden Ausführungsbeispiel zumindest eine Verbindungsöffnung 90 auf. Die Verbindungsöffnung 90 verbindet die beiden Kavitäten 41, 42 miteinander.The intermediate wall 17 provided by the first substrate 10, which separates the two cavities 41, 42 from one another, has four stiffening elements 14, which are designed as ribs and serve to stabilize the intermediate wall 17. Deformation and/or vibration of the intermediate wall 17, in particular during operation of the sound transducer arrangement 1, can be significantly reduced or even prevented as a result. According to the present exemplary embodiment, the intermediate wall 17 has at least one connection opening 90 . The connection opening 90 connects the two cavities 41, 42 to one another.

Das Gehäuseteil 50 ist in diesem Beispiel ähnlich wie in dem dritten Ausführungsbeispiel sehr sparsam ausgebildet und weist neben der Außenfläche 55, an welcher die akustische Ein-/Austrittsöffnung 51 mit der rohrartigen Auskragung 52 angeordnet ist, im Wesentlichen nur mehr die weiteren Au-ßenflächen 54a und 54b auf, welche insbesondere einen Schutz für den ersten MEMS-Schallwandler 21 und den zweiten MEMS-Schallwandler 31 bieten.In this example, the housing part 50 is designed very sparingly, as in the third exemplary embodiment, and in addition to the outer surface 55, on which the acoustic inlet/outlet opening 51 with the tubular projection 52 is arranged, essentially only has the other outer surfaces 54a and 54b, which offer protection for the first MEMS sound transducer 21 and the second MEMS sound transducer 31 in particular.

Das Gehäuseteil 50 ist mit dem ersten Substrat 10, dem zweiten Substrat 20 und dem dritten Substrat 30 ferner jedoch derart verbunden, dass ein erster und ein zweiter Schallleitkanal 61, 67 ausgebildet sind. Dabei ist zwischen dem Gehäuseteil 50 und insbesondere dem zweiten Substrat 20 mit dem MEMS-Schallwandler 21 zumindest ein erster Abschnitt 62 des ersten Schallleitkanals 61 und zwischen dem Gehäuseteil 50 und insbesondere dem dritten Substrat 30 mit dem MEMS-Schallwandler 31 zumindest ein erster Abschnitt 68 des zweiten Schallleitkanals 67 ausgebildet.However, the housing part 50 is also connected to the first substrate 10, the second substrate 20 and the third substrate 30 in such a way that a first and a second sound-conducting channel 61, 67 are formed. At least a first section 62 of the first sound-conducting channel 61 is located between the housing part 50 and in particular the second substrate 20 with the MEMS sound transducer 21, and at least a first section 68 of the second sound-conducting channel 67 is formed.

Insbesondere zur Bauraumeinsparung ist auch bei dieser Schallwandleranordnung 1 nur eine akustische Ein-/Austrittsöffnung 51 vorgesehen. Der zweite Abschnitt 63 des ersten Schallleitkanals 61 und der zweite Abschnitt 69 des zweiten Schallleitkanals 67 sind daher als gemeinsamer Abschnitt ausgebildet, der auch in diesem Beispiel im Gehäuseteil 50 selbst und insbesondere durch die rohrartige Auskragung 52 im Bereich der akustischen Ein-/Austrittsöffnung 51 ausgebildet ist.In order to save installation space in particular, only one acoustic inlet/outlet opening 51 is also provided in this sound transducer arrangement 1 . The second section 63 of the first sound-conducting channel 61 and the second section 69 of the second sound-conducting channel 67 are therefore formed as a common section, which in this example is also formed in the housing part 50 itself and in particular by the tubular projection 52 in the area of the acoustic inlet/outlet opening 51 is.

Zur weiteren Verbesserung der Schallleitung sowie insbesondere zur Bündelung des Schalls ist auch in diesem Beispiel das Schallleitelement 64 vorgesehen. Dabei ist das Schallleitelement 64 derart ausgebildet und angeordnet, dass es den ersten Abschnitt 62 des ersten Schallleitkanals 61 vom ersten Abschnitt 68 des zweiten Schallleitkanals 67 trennt. Hierzu weist das Schallleitelement 64 einen in den gemeinsamen zweiten Abschnitt ragenden Fortsatz 66 auf. Zudem weist das Schallleitelement 64 in diesem Beispiel zwei konkave Schallleitkanten 65a und 65b auf, wobei die Schallleitkante 65a dem ersten Schallleitkanal 61 und die Schallleitkante 65b dem zweiten Schallleitkanal 67 zugeordnet ist.The sound-conducting element 64 is also provided in this example to further improve the sound conduction and in particular to focus the sound. The sound-conducting element 64 is designed and arranged in such a way that it separates the first section 62 of the first sound-conducting channel 61 from the first section 68 of the second sound-conducting channel 67 . For this purpose, the sound-conducting element 64 has an extension 66 projecting into the common second section. In addition, the sound-conducting element 64 has two concave sound-conducting edges 65a and 65b in this example, with the sound-conducting edge 65a being assigned to the first sound-conducting channel 61 and the sound-conducting edge 65b being assigned to the second sound-conducting channel 67 .

Die Figuren 15 bis 17 zeigen ein nicht durch die beanspruchte Erfindung abgedecktes neuntes Ausführungsbeispiel der Schallwandleranordnung 1 in verschiedenen Ansichten. Im Unterschied zu dem ersten Ausführungsbeispiel ist bei dem neunten Ausführungsbeispiel der Schallwandleranordnung 1 ein zusätzliches Substrat 80 vorgesehen.the Figures 15 to 17 show a ninth exemplary embodiment of the sound transducer arrangement 1, which is not covered by the claimed invention, in different views. In contrast to the first exemplary embodiment, an additional substrate 80 is provided in the ninth exemplary embodiment of the sound transducer arrangement 1 .

Auch in dem hier gezeigten Ausführungsbeispiel weist der Membranrahmen 25 im Wesentlichen den gleichen Außendurchmesser auf wie das zweite Substrat 20, während der MEMS-Aktuator 22 einen kleineren Außendurchmesser als das Substrat 20 besitzt. Die Wände 27 des zweiten Substrats 20, welche den Hohlraum 29 des zweiten Substrats 20 seitlich begrenzen, weisen jedoch keinerlei in den Hohlraum 29 vorspringende Wandabschnitte auf, die als Auflage für den MEMS-Aktuator 22 dienen könnten. Auf den Wänden 27 des zweiten Substrats 20 liegt daher, insbesondere vollumfänglich, das zusätzliche Substrat 80 auf, das im Wesentlichen den gleichen Außendurchmesser wie das zweite Substrat 20 aufweist.In the exemplary embodiment shown here too, membrane frame 25 has essentially the same outside diameter as second substrate 20 , while MEMS actuator 22 has a smaller outside diameter than substrate 20 . However, the walls 27 of the second substrate 20, which laterally delimit the cavity 29 of the second substrate 20, have no wall sections projecting into the cavity 29 that could serve as a support for the MEMS actuator 22. On the walls 27 of the second substrate 20 is therefore, in particular over the entire circumference, the additional substrate 80, which has essentially the same outer diameter as the second substrate 20.

Das zusätzliche Substrat 80 weist einen Hohlraum 89 auf, der von Wänden 87 des Substrats 80 seitlich begrenzt wird, wobei die Wände 87 eine wesentlich geringere Höhe als die Wände 27 des zweiten Substrats 20 aufweisen. Die sich im Wesentlichen gegenüberstehenden Wandabschnitte 87a des Substrats 80 sind dicker ausgebildet als die Wandabschnitte 87b des Substrats 80, wobei die dickeren Wandabschnitte 87a gegenüber den Wandabschnitten 87b in den Hohlraum 89 vorspringen. Auf den von den Wandabschnitten 87a gebildeten Vorsprüngen 88 liegt dann der MEMS-Aktuator 22 auf, während der Membranrahmen 25 sowohl auf den Wandabschnitten 87a als auch 87b, insbesondere vollumfänglich, aufliegt. Somit ist der MEMS-Aktuator 22 unterhalb der Membran 23 angeordnet und seitlich von dem Membranrahmen 25 umgeben.The additional substrate 80 has a cavity 89 which is delimited laterally by walls 87 of the substrate 80, the walls 87 having a significantly lower height than the walls 27 of the second substrate 20. The substantially opposing wall sections 87a of the substrate 80 are thicker than the wall sections 87b of the substrate 80, the thicker wall sections 87a projecting into the cavity 89 in relation to the wall sections 87b. The MEMS actuator 22 then rests on the projections 88 formed by the wall sections 87a, while the membrane frame 25 rests, in particular over the entire circumference, both on the wall sections 87a and 87b. Thus, the MEMS actuator 22 is arranged below the membrane 23 and surrounded by the membrane frame 25 on the side.

Der Hohlraum 89 ist somit nach oben durch die Membran 23 verschlossen. Nach unten ist der Hohlraum 89 offen und grenzt an den nach oben offenen Hohlraum 29 des zweiten Substrats 20, der nach unten von dem ersten Substrat 10 verschlossen ist. Die übereinander angeordneten Hohlräume 29 und 89 bilden dann gemeinsam die Kavität 41 für den MEMS-Schallwandler 21. Da die Wände 27 des zweiten Substrats 20 keine in den Hohlraum 29 vorspringenden Wandabschnitte besitzen, die den Hohlraum 29 verkleinern würden, trägt dies zur Vergrößerung der durch den Hohlraum 29 mit ausgebildeten Kavität 41 bei.The cavity 89 is thus closed by the membrane 23 at the top. The cavity 89 is open at the bottom and borders on the cavity 29 of the second substrate 20, which is open at the top and is closed by the first substrate 10 at the bottom. The cavities 29 and 89 arranged one above the other then together form the cavity 41 for the MEMS sound transducer 21. Since the walls 27 of the second substrate 20 do not have any wall sections projecting into the cavity 29, which would reduce the cavity 29, this contributes to increasing the through the cavity 29 with the cavity 41 formed.

Die Figuren 18 bis 20 zeigen ein nicht durch die beanspruchte Erfindung abgedecktes zehntes Ausführungsbeispiel der Schallwandleranordnung 1 in verschiedenen Ansichten. Im Unterschied zu dem neunten Ausführungsbeispiel ist bei dem zehnten Ausführungsbeispiel der Schallwandleranordnung 1 zusätzlich ein Gehäuseteil 50 vorgesehen, welches im Wesentlichen wie bei dem zweiten Ausführungsbeispiel ausgebildet ist. Im Unterschied zu dem zweiten Ausführungsbeispiel ist bei dem zehnten Ausführungsbeispiel der Schallwandleranordnung 1 in dem Hohlraum 53 des Gehäuseteils 50 auch das zusätzliche Substrat 80 aufgenommen.the Figures 18 to 20 show a tenth exemplary embodiment of the sound transducer arrangement 1, which is not covered by the claimed invention, in different views. In contrast to the ninth exemplary embodiment, a housing part 50 is additionally provided in the tenth exemplary embodiment of the sound transducer arrangement 1, which is essentially as in FIG the second embodiment is formed. In contrast to the second exemplary embodiment, the additional substrate 80 is also accommodated in the cavity 53 of the housing part 50 in the tenth exemplary embodiment of the sound transducer arrangement 1 .

Die Figuren 21 bis 23 zeigen ein nicht durch die beanspruchte Erfindung abgedecktes elftes Ausführungsbeispiel der Schallwandleranordnung 1 in verschiedenen Ansichten. Im Unterschied zu dem ersten Ausführungsbeispiel weisen bei dem elften Ausführungsbeispiel der Schallwandleranordnung 1 das zweite Substrat 20, der MEMS-Aktuator 22 und der Membranrahmen 25 des ersten MEMS-Schallwandlers 21 jeweils den gleichen Außendurchmesser auf.the Figures 21 to 23 show an eleventh exemplary embodiment of the sound transducer arrangement 1, which is not covered by the claimed invention, in different views. In contrast to the first exemplary embodiment, in the eleventh exemplary embodiment of the sound transducer arrangement 1, the second substrate 20, the MEMS actuator 22 and the membrane frame 25 of the first MEMS sound transducer 21 each have the same outside diameter.

Die Wände 27 des zweiten Substrats 20, welche den Hohlraum 29 des zweiten Substrats 20 seitlich begrenzen, weisen keinerlei in den Hohlraum 29 vorspringende Wandabschnitte auf, die als Auflage für den MEMS-Aktuator 22 dienen müssten. Vielmehr liegt der MEMS-Aktuator 22 vorzugsweise vollumfänglich auf den Wänden 27 des zweiten Substrats 20 auf, wobei auf dem äußeren Randbereich des MEMS-Aktuators 22 ferner der Membranrahmen 25 aufliegt.The walls 27 of the second substrate 20, which laterally delimit the cavity 29 of the second substrate 20, have no wall sections projecting into the cavity 29 that would have to serve as a support for the MEMS actuator 22. Rather, the MEMS actuator 22 preferably rests on the walls 27 of the second substrate 20 over its entire circumference, with the membrane frame 25 also resting on the outer edge region of the MEMS actuator 22 .

Somit trägt auch in diesem Beispiel das zweite Substrat 20 den MEMS-Aktuator 22 sowie den Membranrahmen 25 mit der daran befestigten Membran 23, wobei der MEMS-Aktuator 22 unterhalb der Membran 23 angeordnet ist, und wobei das zweite Substrat 20 unterhalb der Membran 23 und des MEMS-Aktuators 22 den Hohlraum 29 aufweist, der nach oben durch die Membran 23 verschlossen ist.Thus, in this example, too, the second substrate 20 carries the MEMS actuator 22 and the membrane frame 25 with the membrane 23 attached thereto, with the MEMS actuator 22 being arranged below the membrane 23, and with the second substrate 20 below the membrane 23 and of the MEMS actuator 22 has the cavity 29 which is closed at the top by the membrane 23.

Nach unten ist der Hohlraum 29 des zweiten Substrats 20 von dem ersten Substrat 10 verschlossen.The cavity 29 of the second substrate 20 is closed by the first substrate 10 at the bottom.

Auch bei diesem Ausführungsbeispiel konnte die durch den Hohlraum 29 gebildete Kavität 41 des MEMS-Schallwandlers 21 effektiv und gleichzeitig sehr bauraumsparend vergrößert werden.In this exemplary embodiment, too, the cavity 41 of the MEMS sound transducer 21 formed by the hollow space 29 could be enlarged effectively and at the same time in a very space-saving manner.

Die Figuren 24 bis 26 zeigen ein nicht durch die beanspruchte Erfindung abgedecktes zwölftes Ausführungsbeispiel der Schallwandleranordnung 1 in verschiedenen Ansichten. Im Unterschied zu dem elften Ausführungsbeispiel ist bei dem zwölften Ausführungsbeispiel der Schallwandleranordnung 1 zusätzlich ein Gehäuseteil 50 vorgesehen, welches im Wesentlichen wie bei dem zweiten Ausführungsbeispiel ausgebildet ist.the Figures 24 to 26 show a twelfth exemplary embodiment of the sound transducer arrangement 1, which is not covered by the claimed invention, in different views. In contrast to the eleventh exemplary embodiment, a housing part 50 is additionally provided in the twelfth exemplary embodiment of the sound transducer arrangement 1, which is designed essentially as in the second exemplary embodiment.

Claims (5)

  1. Sound transducer assembly (1)
    with a first substrate (10),
    a first and second MEMS sound transducer (21, 31) for generating and/or detecting sound waves in the audible wavelength spectrum, which each comprises a cavity (41, 42), and
    an ASIC (11) electrically connected to the first MEMS sound transducer (21),
    wherein the two cavities (41, 42) of the MEMS sound transducers (21, 31) are separated from one another by an intermediate wall (17) of the first substrate (10),
    characterized in that
    the ASIC (11) is embedded in the first substrate (10);
    the first MEMS sound transducer (21) is arranged on a second substrate (20) such that the cavity (41) of the first MEMS sound transducer (21) is at least partially formed in the second substrate (20), wherein a hollow space (29) of the second substrate (20) forming said cavity (41) is laterally surrounded or delimited by walls (27) of the second substrate (20) while being closed upwardly by a membrane (23) of the first MEMS sound transducer (21); ,
    the first substrate (10) and the second substrate (20) are connected to one another in such a manner that the ASIC (11) of the first substrate (10) and the first MEMS sound transducer (21) of the second substrate (20) are electrically coupled to one another;
    the second MEMS sound transducer (31) is arranged on a third substrate (30), that the cavity (42) of the second MEMS sound transducer (31) is formed at least partially in the third substrate (30), wherein a hollow space (39) of the third substrate (30) forming said cavity (42) is laterally surrounded or delimited by walls (37) of the third substrate (30) and being closed downwardly by a membrane (33) of the second MEMS sound transducer (31); the first substrate (10) and the third substrate (30) are connected to one another in an electrically conductive manner;
    the first substrate (10) is arranged between the second substrate (20) and the third substrate (30), and
    the substrates (10, 20, 30) are each in the form of a circuit board or PCB (printed circuit board).
  2. The transducer assembly according to the preceding claim 1, characterized in that the cavity (41, 42) of the first and/or second MEMS sound transducer (21, 31) is additionally formed in the first substrate (10).
  3. Sound transducer assembly according to one or more of the previous claims, characterized in that
    the intermediate wall (17) features at least one connection opening (90) and/or a connection channel extending from the first cavity (41) of the first MEMS sound transducer (21) to the second cavity (42) of the second MEMS sound transducer (31).
  4. Sound transducer assembly according to one or more of the previous claims, characterized in that
    the intermediate wall (17) features at least one stiffening element (14), in particular a rib.
  5. Sound transducer assembly according to one or more of the previous two claims, characterized in that
    the two cavities (41, 42) of the sound transducer assembly (1) feature volumes of different sizes.
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KR20180014726A (en) 2018-02-09
SG10201909786QA (en) 2019-11-28
CN107864696A (en) 2018-03-30
WO2016180820A1 (en) 2016-11-17
DE102015107560A1 (en) 2016-11-17
AU2016261293B2 (en) 2020-12-10
CA2985721A1 (en) 2016-11-17
CN107864696B (en) 2021-02-02
SG11201709249VA (en) 2017-12-28
EP3295683A1 (en) 2018-03-21
US10412505B2 (en) 2019-09-10
HK1247015A1 (en) 2018-09-14
AU2016261293A1 (en) 2017-12-14

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