EP3254364A1 - Einschaltstrombegrenzung - Google Patents
EinschaltstrombegrenzungInfo
- Publication number
- EP3254364A1 EP3254364A1 EP16700307.8A EP16700307A EP3254364A1 EP 3254364 A1 EP3254364 A1 EP 3254364A1 EP 16700307 A EP16700307 A EP 16700307A EP 3254364 A1 EP3254364 A1 EP 3254364A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- charging
- transistor
- storage capacitor
- semiconductor device
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000003990 capacitor Substances 0.000 claims abstract description 74
- 238000000034 method Methods 0.000 claims abstract description 18
- 239000004065 semiconductor Substances 0.000 claims description 66
- 230000000903 blocking effect Effects 0.000 claims description 11
- 125000004122 cyclic group Chemical group 0.000 claims description 4
- 238000012544 monitoring process Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 4
- 230000006378 damage Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/02—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/36—Means for starting or stopping converters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/001—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection limiting speed of change of electric quantities, e.g. soft switching on or off
- H02H9/002—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection limiting speed of change of electric quantities, e.g. soft switching on or off limiting inrush current on switching on of inductive loads subjected to remanence, e.g. transformers
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
- H02M1/322—Means for rapidly discharging a capacitor of the converter for protecting electrical components or for preventing electrical shock
Definitions
- the invention relates to a method and a circuit arrangement for inrush current limiting in a DC link or acips originallynikum-.
- An intermediate circuit is generally known as an electrical circuit device that electrically couples a plurality of electrical networks via converters as an energy store.
- the DC intermediate circuit is known, which is operated with a DC link capacitor at constant voltage and variable current.
- the intermediate circuit of such voltage source inverter usually contains a comparatively large capacity, which serves as a low-impedance source for connected converters.
- a capacitive behavior, ie, a high current immediately after switching on, which subsides thereafter, is disadvantageous.
- the high charging current that flows into the storage capacitor when the relevant converter is plugged in or switched on can, if no restrictive measures are taken, lead to the destruction of components.
- NTC temperature-dependent resistor
- Einschaltstrombegrenzer usually such a thermistor, which is connected in series with the consumer, but need not necessarily be bridged. It limits the current after switching on because of its high resistance when cold. Then it warms up by the current flow, reduces its resistance and then causes only small losses to maintain its own temperature. Conversely, with NTC, the resistance decreases as the temperature increases, but conversely, with a hot (warm) NTC, the resistance of the limiting resistor drops very far and the inrush current increases very much.
- Object of the present invention is to overcome the aforementioned disadvantages and to provide a circuit arrangement for inrush current limiting in a DC link, which is possible cost feasible, can be operated reliably and operates as low loss.
- the basic idea of the present invention is inter alia to provide a specific charging circuit in order to charge the storage capacitor sequentially and to charge the storage capacitor, preferably stepwise, by respectively successive amounts of charge, wherein the charging circuit performs the switching through and blocking of the charging circuit to the storage capacitor via semiconductor components.
- a charge of the storage capacitor takes place below an envelope of an exponential function, which asymptotically approaches the charge capacitance of the capacitor.
- a circuit arrangement for Einschaltstrombegrenzung for voltage intermediate circuits which are designed to limit the current flowing in the storage capacitor charging current between a supply voltage source and the storage capacitor, the at least one semiconductor device with a gate, a resistor and a transistor, wherein one or the drain-source path (between the drain terminal and the source terminal) of the semiconductor device is arranged in series with the storage capacitor and wherein the charging of the storage capacitor via a plurality of each time sequential charging current pulses (h, ... In) takes place, which in each case flow during short-term switching of the drain-source path of the semiconductor device to the storage capacitor.
- the charging current is thus divided into a plurality of charging current components, which load the storage capacitor in chronological succession.
- the gate of the semiconductor device via the drain-source path of the transistor connected to this gate connected to one or the ground potential or connectable (depending on the circuit state) and depending on whether the drain-source path of the semiconductor device accordingly is blocked or turned on, the gate of the semiconductor device is connected to either the ground potential or a control voltage UST.
- the drain-source path of the semiconductor device is arranged in series with the resistor. Accordingly, this branch represents the charging current branch for the charging current of the storage capacitor. Only for the short period of time in which the semiconductor device is turned on, a time-limited charging current can flow. Once the gate of the semiconductor device is again connected to the ground potential, the drain-source path goes into the blocking state and the charging current breaks off.
- a resistor in the charge branch is arranged in series with the drain-source path of the semiconductor device, causing a voltage drop across the resistor, which is used to drive the base of the transistor to turn on the transistor, which in turn causes the gate of the semiconductor device is connected to the ground potential and the semiconductor device goes into its off state.
- the blocking state occurs, no current flows in the charging branch through the resistor and the voltage drops at the resistor immediately.
- no control voltage is applied to the base of the transistor and the transistor is in the blocking state.
- the gate of the semiconductor component resides the control voltage and the semiconductor device is switched through again, etc.
- the transistor has a base and the resistor is connected to the source terminal of the semiconductor device and between the resistor and the source terminal is a septabgriff, which is connected to the gate of the transistor.
- the gate of the semiconductor component for applying the control voltage UST required for switching the gate is connected to a control voltage line, preferably to a tap on a voltage divider.
- the storage capacitor is connected to the drain terminal of the semiconductor device.
- a MOSFET e.g., a SuperMesh Power MOSFET
- a transistor is used as the semiconductor device. It is further preferred if the transistor for switching the gate of the MOSFET or semiconductor element is an NPN transistor.
- a further switchable transistor is also provided, which bridges the charging circuit for charging the charging capacitor when switching.
- a switchable transistor can also be connected to the gate of the semiconductor component (eg, the gate of the MOSFET) in order to achieve the halfway point. to turn the circuit component in its blocking state. This ensures that no currents can flow via the branch for charging the storage capacitor during operation of a load on the intermediate circuit, which serves for the further protection of the storage capacitor and thus of the entire DC link circuit.
- a further aspect of the present invention relates to a method for inrush current limiting for voltage intermediate circuits with a circuit arrangement as described above wherein: a. the charging of the storage capacitor in each case via a charging current pulse
- steps a) and b) are repeated until the storage capacitor is charged and charging current no longer flows (cyclic charging).
- a (cyclic) charging of the storage capacitor also via a charging current pulse (Ii, ... I n ) for the duration of the switching through the Drain-source path of the circuit controller via the closed circuit breaker, wherein the charging is accomplished for this period of time by a respective charge current pulse (Ii ,, L) corresponding amount of charge flows to the storage capacitor and the charging current of the charging capacitor increases and the charging current increases is opened again via a current threshold of the circuit controller, the circuit breaker, whereby the charging current is interrupted.
- a specific switching regulator such as a flyback converter (Tiny Switch)
- the circuit is operated so that the charging current to the storage capacitor is interrupted by the drain-source path of the semiconductor device is blocked, whereby the voltage at the resistor and thus at the gate of the transistor decreases and the transistor changes to the locked state.
- the gate of the semiconductor device In the locked state of the transistor, however, the gate of the semiconductor device is no longer at ground potential, but at the control potential, so that the drain-source path is turned on again and a charging current again briefly flows through the charging branch to the storage capacitor, etc.
- the charge described above with charging current pulses can also be effected via a charging circuit at the z.
- a flyback converter is used.
- the operating principle of the flyback converter is used to implement the inventive idea described above and in each case a small amount of energy in the magnetic field of a transformer is stored in a charging phase and in a second (the locked) phase, the "unloading" via the secondary side takes place / Discharge cycle is performed at a certain switching frequency, eg 130 kHz.
- the method is preferably developed further so that a further transistor is activated before connecting a load fed from the voltage intermediate circuit in order to bridge the charging circuit for charging the charging capacitor.
- a further transistor is activated before connecting a load fed from the voltage intermediate circuit in order to bridge the charging circuit for charging the charging capacitor.
- a monitoring circuit monitors the voltage levels (potentials) at the gate of the semiconductor device, at the gate of the transistor for bypassing the charging circuit, and the voltage across the resistor. Does it come z. B. after activation of the power path to an unauthorized in this case voltage drop across the resistor, an error signal is generated, which interrupts the circuit and thus prevents the destruction of the charging branch.
- the aforementioned circuit arrangement is characterized in that the semiconductor device is a MOSFET or a transistor, in particular an NPN transistor and / or in that a switchable transistor is provided which bridges the charging circuit for charging the charging capacitor when switching. It is advantageous if, in addition, a switchable transistor is connected to the gate of the semiconductor component in order to switch the semiconductor component into its blocking state.
- FIG. 2 an illustration which shows the charging process of the
- Storage capacitor with a circuit according to the invention is exemplary
- FIG. 3 a flyback converter used by way of example for the charging circuit
- FIG. 4 shows an illustration of an alternative embodiment of a charging circuit
- FIG. 5 is a diagram illustrating the charging process of a charging capacitor connected to the charging circuit
- FIG. 6 shows an illustration of an alternative further embodiment of a charging circuit
- Fig. 7 is an illustration of an alternative further embodiment of a charging circuit
- the circuit arrangement 1 shows a block diagram of an exemplary embodiment of a circuit arrangement 1 according to the invention.
- the circuit arrangement 1 comprises a charging circuit 4 (charging operation), a power unit 20 (stationary operation after charging the capacitor), a monitoring part 30 (voltage monitoring) and a locking part 40.
- the circuit arrangement 1 is designed for inrush current limiting for voltage intermediate circuits, which are formed at least with a storage capacitor 2.
- the charging circuit 4 mentioned above is provided between a supply voltage source 3 and the storage capacitor 2.
- the charging circuit 4 has at least one semiconductor component 5 (in this case a MOSFET) with a gate 6, a resistor 7 and a transistor 8.
- the semiconductor device 5 has a drain terminal D, a source terminal S and a gate 6.
- the drain-source path between the drain terminal D and the source terminal S of the semiconductor component 5, as shown in FIG. 1, are arranged in series with the storage capacitor 2.
- the storage capacitor 2 is connected to the drain terminal D of the semiconductor component 5.
- the resistor 7 is connected in series with the charging capacitor 2 and the semiconductor component 5. Accordingly, if a charging current flows through the charging current branch, then a voltage drops across the resistor 7, which voltage u. a. is monitored with the monitoring part 30. If an undesired current flows over the charging current branch after the charge of the storage capacitor 2 has been fully charged, a voltage which can be detected by the monitoring part 30 drops at the resistor 7 so that an error signal can be triggered in order to switch off the circuit.
- a transistor 8 (here an NPN transistor) for blocking and switching of the semiconductor device 2 is provided.
- the gate 6 of the semiconductor device 5 is connected via the base-emitter path of the transistor 8 to the ground potential. If the base-emitter path of the transistor 8 is blocked or switched on, then the gate 6 of the semiconductor component 5 is connected to either the ground potential or a control voltage UST and thus in the locked state or in its forward position.
- the transistor 8 has the base 10 and the resistor 7 is connected to the source terminal S of the semiconductor device 5. Between the resistor 7 and the source terminal S is a voltage tap 9, which is connected to the base 10 of the Transistor 8 is connected. That is, the transistor 8 switches, depending on whether a charging current (charging current pulse) flows in the charging current branch, as a result of which a voltage drop across the resistor 7 occurs.
- a charging current charging current pulse
- a voltage divider 12 is provided in order to provide the control voltage UST required for switching the semiconductor component 5.
- the gate 6 of the semiconductor component 5 is connected to the gate 6 via a control voltage line 11, preferably to a tap 13 on the voltage divider 12.
- the charging circuit 4 further comprises the transistor 16, which pulls the potential at the gate 6 of the semiconductor device 5 in its forward position to ground potential and thus blocks the charge branch. If the transistor 8 and the transistor 6 are in their locked state, the control voltage is present at the gate 6
- the power unit 20 further includes the transistor 15, which serves to protect the circuit in steady state operation.
- the transistor 15 (or alternatively a MOSFET) bridges the charging circuit 4 as intended.
- the monitoring part 30 is used for voltage monitoring.
- the voltage levels (potentials) at the gate 6 of the semiconductor device 5, at the base 10 of the transistor 18 for bridging the charging circuit and the voltage across the resistor 7 are monitored.
- an error signal can be output from the monitoring part 30.
- FIG. 3 shows a switching regulator 50 which is exemplary for the charging circuit.
- the power switch is clocked at a fixed frequency, the turn-on time being limited by the current increase.
- a compact design can be realized by the circuit breaker with driver, the current limit and the generation of the clock signal are housed in a housing.
- the module can generate its required voltages by internal voltage regulation itself, so that no external control voltage is needed.
- FIG. 4 shows an illustration of an alternative embodiment of a charging circuit 4.
- the shown switching regulator 50 (Tiny Switch) is self-powered via its "DRAIN" PIN D. As soon as the switching regulator 50 has built up its operating voltage, the charging process starts and the following process takes place: At the beginning of a charging cycle, the circuit breaker is closed and the Charging current of the charging capacitor 2 increases.
- the steepness of the current increase is predetermined by a resistor 7 arranged in series with the switching regulator 50. If the current threshold of the switching regulator 50 is reached, the power switch is disabled. Between detection of the current clamp and the blockage of the circuit breaker is a certain delay time in which the current continues to increase. Furthermore, the components d. H. the resistors R60, R61, R62, R63, the diode D60, the capacitor C60 provided for the purpose of grid relief when switching off the circuit breaker.
- FIG. 5 shows a corresponding illustration, which represents the charging process of a charging capacitor 7 connected to the charging circuit 4 from FIG.
- the current increases up to the value of the current limit of the switching regulator.
- the circuit breaker trip already starts at 75% of the specified current. This switching cycle is repeated at the clock frequency of the switching regulator 50 (here: Tiny Switch) and is in the present embodiment at a fixed 130kHz.
- the internal shutdown of the switching regulator 50 must be bypassed by the circuit 60 shown in FIG. A transistor 61 sets the Enable PIN EN of As soon as the output voltage drops below the threshold, the transistor 61 is again disabled and the timing is continued.
- bypass pin BP of the switching regulator 50 is connected to a capacitor C101. This serves to regulate the maximum flowing charging current.
- four series-connected resistors R100, R101, R102 and R103 are further provided in a wiring harness arranged in parallel to the charging branch.
- the ENABLE PIN EN is connected to the transistor 61 via a resistor R104.
- the circuit 60 shown in FIG. 6 provides via the transistor 61 that the open loop control is operated.
- the transistor 61 is formed with an adjustable clock frequency, resulting in a period for the turn-on and turn-off.
- the clock signal is generated with an astable flip-flop.
- the charging time can be suitably reduced by the changes to the circuit according to the embodiment shown in FIG.
- a throttle 19 is connected in series with the charging capacitor 2 for limiting the increase in current. Due to the characteristic of the current increase through the throttle 19, the time duration for the current increase increases. This implies, conversely, that the power switch remains closed for a longer period of time before the shutdown takes place upon reaching the current threshold, whereby the charging capacitor 2 is charged faster, resulting in an optimized charging characteristics.
- FIG. 8 shows an illustration of a circuit arrangement 1 (here: intermediate circuit circuit) for charging the charging capacitor 2 comprising three subcircuits (TS1, TS2 and TS3).
- the subcircuit TS1 corresponds to the one described above Embodiment of the charging circuit 4. It can be seen that the ENABLE PIN (EN) of the Tiny switch is connected to the transistor 8 via a resistor.
- the subcircuit TS2 represents a power section 20 which serves as the circuit breaker for bypassing and for driving the charging circuit
- the subcircuit TS3 is used for enabling as soon as the charging capacitor 2 is charged.
- the invention is not limited in its execution to the above-mentioned preferred embodiments. Rather, a number of variants is conceivable, which makes use of the illustrated solution even with fundamentally different types of use.
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Direct Current Feeding And Distribution (AREA)
- Dc-Dc Converters (AREA)
- Charge And Discharge Circuits For Batteries Or The Like (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102015101457 | 2015-02-02 | ||
DE102015103713.0A DE102015103713A1 (de) | 2015-02-02 | 2015-03-13 | Einschaltstrombegrenzung |
PCT/EP2016/050384 WO2016124358A1 (de) | 2015-02-02 | 2016-01-11 | Einschaltstrombegrenzung |
Publications (1)
Publication Number | Publication Date |
---|---|
EP3254364A1 true EP3254364A1 (de) | 2017-12-13 |
Family
ID=56409860
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP16700307.8A Ceased EP3254364A1 (de) | 2015-02-02 | 2016-01-11 | Einschaltstrombegrenzung |
Country Status (5)
Country | Link |
---|---|
US (1) | US10468970B2 (zh) |
EP (1) | EP3254364A1 (zh) |
CN (1) | CN107735931B (zh) |
DE (1) | DE102015103713A1 (zh) |
WO (1) | WO2016124358A1 (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102018118068A1 (de) * | 2018-07-26 | 2020-01-30 | Ebm-Papst Mulfingen Gmbh & Co. Kg | Schaltungsanordnung zur Zwischenkreissymmetrierung |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4233616A1 (de) | 1992-10-06 | 1994-09-01 | Metrawatt Gmbh Gossen | Vorrichtung zur Einschaltstrombegrenzung an Schaltnetzteilen |
US6714429B2 (en) * | 2001-08-15 | 2004-03-30 | Astec International Limited | Active inrush current control for AC to DC converters |
JP2005093497A (ja) * | 2003-09-12 | 2005-04-07 | Toshiba Corp | 保護回路を有する半導体装置 |
DE102005003258B3 (de) * | 2005-01-24 | 2006-05-18 | Infineon Technologies Ag | Schaltungsanordnung zum Begrenzen eines Klingelstroms |
US7432661B2 (en) * | 2005-05-02 | 2008-10-07 | Lutron Electronics Co., Inc. | Electronic ballast having a flyback cat-ear power supply |
WO2007038649A2 (en) * | 2005-09-26 | 2007-04-05 | Hitek Power Corporation | Power supply with current limiting circuits |
CN100487492C (zh) * | 2006-07-12 | 2009-05-13 | 中国石油天然气集团公司 | 声波测井相控阵激励的幅度加权电路 |
WO2008131795A1 (de) * | 2007-04-25 | 2008-11-06 | Osram Gesellschaft mit beschränkter Haftung | Beleuchtungsgerät mit einschaltstrombegrenzungsschaltung |
JP5550716B2 (ja) * | 2010-02-26 | 2014-07-16 | シチズンホールディングス株式会社 | Led駆動回路 |
CN102355124B (zh) * | 2011-09-14 | 2014-01-08 | 华为技术有限公司 | 一种避免光伏逆变器频繁启停的装置及光伏逆变器 |
US8816625B2 (en) * | 2011-10-27 | 2014-08-26 | Rockwell Automation Technologies, Inc. | Integrated regenerative AC drive with solid state precharging |
EP2639949B1 (de) * | 2012-03-13 | 2020-04-29 | Siemens Aktiengesellschaft | Stromversorgung mit Zwischenkreis |
CN103368212A (zh) * | 2012-03-29 | 2013-10-23 | 海洋王照明科技股份有限公司 | 一种限压充电电路 |
EP2701294B1 (en) * | 2012-08-24 | 2017-11-08 | Dialog Semiconductor GmbH | Low current start up including power switch |
DE102012219488A1 (de) * | 2012-10-25 | 2014-04-30 | Robert Bosch Gmbh | Schaltungsanordnung und Verfahren zum Vorladen eines kapazitiven Bauelements |
JP6193029B2 (ja) * | 2013-07-12 | 2017-09-06 | 株式会社東芝 | スイッチング素子駆動電源回路 |
US20150022087A1 (en) * | 2013-07-16 | 2015-01-22 | GE Lighting Solutions, LLC | Method and apparatus for providing supplemental power in a led driver |
US9513681B2 (en) * | 2014-11-04 | 2016-12-06 | Dell Products, L.P. | Systems and methods for controlling inrush electrical currents using a virtual miller capacitor and a metal-oxide-semiconductor field-effect transistor (MOSFET) |
-
2015
- 2015-03-13 DE DE102015103713.0A patent/DE102015103713A1/de active Pending
-
2016
- 2016-01-11 WO PCT/EP2016/050384 patent/WO2016124358A1/de active Application Filing
- 2016-01-11 EP EP16700307.8A patent/EP3254364A1/de not_active Ceased
- 2016-01-11 CN CN201680014340.7A patent/CN107735931B/zh active Active
- 2016-01-11 US US15/548,057 patent/US10468970B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20180026522A1 (en) | 2018-01-25 |
CN107735931A (zh) | 2018-02-23 |
WO2016124358A1 (de) | 2016-08-11 |
CN107735931B (zh) | 2020-06-12 |
DE102015103713A1 (de) | 2016-08-04 |
US10468970B2 (en) | 2019-11-05 |
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