EP3118948A4 - Halbleiterlaservorrichtung - Google Patents

Halbleiterlaservorrichtung Download PDF

Info

Publication number
EP3118948A4
EP3118948A4 EP15762037.8A EP15762037A EP3118948A4 EP 3118948 A4 EP3118948 A4 EP 3118948A4 EP 15762037 A EP15762037 A EP 15762037A EP 3118948 A4 EP3118948 A4 EP 3118948A4
Authority
EP
European Patent Office
Prior art keywords
semiconductor laser
laser device
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP15762037.8A
Other languages
English (en)
French (fr)
Other versions
EP3118948A1 (de
EP3118948B1 (de
Inventor
Yujin Zheng
Hirofumi Kan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Publication of EP3118948A1 publication Critical patent/EP3118948A1/de
Publication of EP3118948A4 publication Critical patent/EP3118948A4/de
Application granted granted Critical
Publication of EP3118948B1 publication Critical patent/EP3118948B1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4062—Edge-emitting structures with an external cavity or using internal filters, e.g. Talbot filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08081—Unstable resonators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02438—Characterized by cooling of elements other than the laser chip, e.g. an optical element being part of an external cavity or a collimating lens
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
    • H01S5/405—Two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08018—Mode suppression
    • H01S3/0804—Transverse or lateral modes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
    • H01S3/0813—Configuration of resonator
    • H01S3/0815—Configuration of resonator having 3 reflectors, e.g. V-shaped resonators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4068—Edge-emitting structures with lateral coupling by axially offset or by merging waveguides, e.g. Y-couplers

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Lasers (AREA)
EP15762037.8A 2014-03-12 2015-03-03 Halbleiterlaservorrichtung Active EP3118948B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014048593A JP6268004B2 (ja) 2014-03-12 2014-03-12 半導体レーザ装置
PCT/JP2015/056241 WO2015137199A1 (ja) 2014-03-12 2015-03-03 半導体レーザ装置

Publications (3)

Publication Number Publication Date
EP3118948A1 EP3118948A1 (de) 2017-01-18
EP3118948A4 true EP3118948A4 (de) 2017-12-13
EP3118948B1 EP3118948B1 (de) 2019-04-24

Family

ID=54071647

Family Applications (1)

Application Number Title Priority Date Filing Date
EP15762037.8A Active EP3118948B1 (de) 2014-03-12 2015-03-03 Halbleiterlaservorrichtung

Country Status (5)

Country Link
US (1) US9882354B2 (de)
EP (1) EP3118948B1 (de)
JP (1) JP6268004B2 (de)
CN (1) CN106104948B (de)
WO (1) WO2015137199A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019155668A1 (ja) * 2018-02-07 2019-08-15 三菱電機株式会社 半導体レーザ装置
JP7142512B2 (ja) * 2018-08-08 2022-09-27 浜松ホトニクス株式会社 外部共振器型半導体レーザ装置
CN109193342B (zh) * 2018-10-15 2019-11-15 中国科学院理化技术研究所 一种半导体激光器
CN111478180B (zh) * 2020-04-23 2022-06-10 西安电子科技大学 片上集成慢光波导的半导体激光器

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5572542A (en) * 1995-04-13 1996-11-05 Amoco Corporation Technique for locking an external cavity large-area laser diode to a passive optical cavity
US20070064754A1 (en) * 2003-05-09 2007-03-22 Yujin Zheng Semiconductor laser device
JP2007207886A (ja) * 2006-01-31 2007-08-16 Hamamatsu Photonics Kk 半導体レーザ装置
US20070291812A1 (en) * 2004-06-16 2007-12-20 Petersen Paul M Segmented Diode Laser System

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5115445A (en) * 1988-02-02 1992-05-19 Massachusetts Institute Of Technology Microchip laser array
US4985897A (en) * 1988-10-07 1991-01-15 Trw Inc. Semiconductor laser array having high power and high beam quality
US5282220A (en) * 1992-04-24 1994-01-25 Hughes Aircraft Company Talbot filtered surface emitting distributed feedback semiconductor laser array
AU4897897A (en) * 1996-10-09 1998-05-05 Ramadas M. R. Pillai External cavity micro laser apparatus
US6212216B1 (en) * 1996-12-17 2001-04-03 Ramadas M. R. Pillai External cavity micro laser apparatus
CN1659753A (zh) * 2002-04-03 2005-08-24 埃斯科绘图有限公司 激光系统
JP4580236B2 (ja) * 2002-09-02 2010-11-10 リモ パテントフェルヴァルトゥング ゲーエムベーハー ウント コー．カーゲー 半導体レーザ装置
DE10240949A1 (de) * 2002-09-02 2004-03-04 Hentze-Lissotschenko Patentverwaltungs Gmbh & Co.Kg Halbleiterlaservorrichtung
JP2004186233A (ja) * 2002-11-29 2004-07-02 Toshiba Corp 半導体レーザ装置、半導体レーザの制御方法、映像表示装置
JP4449316B2 (ja) * 2003-03-18 2010-04-14 パナソニック株式会社 半導体レーザ装置
JP4488065B2 (ja) * 2007-11-21 2010-06-23 株式会社ジェイテクト 光学式エンコーダ
GB201107948D0 (en) * 2011-05-12 2011-06-22 Powerphotonic Ltd Multi-wavelength diode laser array

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5572542A (en) * 1995-04-13 1996-11-05 Amoco Corporation Technique for locking an external cavity large-area laser diode to a passive optical cavity
US20070064754A1 (en) * 2003-05-09 2007-03-22 Yujin Zheng Semiconductor laser device
US20070291812A1 (en) * 2004-06-16 2007-12-20 Petersen Paul M Segmented Diode Laser System
JP2007207886A (ja) * 2006-01-31 2007-08-16 Hamamatsu Photonics Kk 半導体レーザ装置

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
See also references of WO2015137199A1 *
SU ZHOUPING ET AL: "Beam quality improvement of laser diode array by using off-axis external cavity References and links", REV. SCI. INSTRUM APPL. PHYS. LETT.PARAXIAL APPL. PHYS. LETT, vol. 15, no. 19, 2007, pages 11776 - 11780, XP055419586, Retrieved from the Internet <URL:https://www.osapublishing.org/DirectPDFAccess/7D0D4754-AD80-432C-25626EA9B92654B1_141154/oe-15-19-11776.pdf?da=1&id=141154&seq=0&mobile=no> [retrieved on 20171009] *

Also Published As

Publication number Publication date
US20170033537A1 (en) 2017-02-02
US9882354B2 (en) 2018-01-30
EP3118948A1 (de) 2017-01-18
EP3118948B1 (de) 2019-04-24
CN106104948A (zh) 2016-11-09
WO2015137199A1 (ja) 2015-09-17
CN106104948B (zh) 2019-05-10
JP6268004B2 (ja) 2018-01-24
JP2015173194A (ja) 2015-10-01

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