Classifications

• • C—CHEMISTRY; METALLURGY
  • C30—CRYSTAL GROWTH
  • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
  • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
  • C30B13/005—Continuous growth
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02365—Forming inorganic semiconducting materials on a substrate
  • H01L21/02436—Intermediate layers between substrates and deposited layers
  • H01L21/02439—Materials
  • H01L21/02488—Insulating materials
• • C—CHEMISTRY; METALLURGY
  • C30—CRYSTAL GROWTH
  • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
  • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
  • C30B13/16—Heating of the molten zone
  • C30B13/22—Heating of the molten zone by irradiation or electric discharge
  • C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02365—Forming inorganic semiconducting materials on a substrate
  • H01L21/02518—Deposited layers
  • H01L21/02521—Materials
  • H01L21/02524—Group 14 semiconducting materials
  • H01L21/02532—Silicon, silicon germanium, germanium
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02365—Forming inorganic semiconducting materials on a substrate
  • H01L21/02656—Special treatments
  • H01L21/02658—Pretreatments
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02365—Forming inorganic semiconducting materials on a substrate
  • H01L21/02656—Special treatments
  • H01L21/02664—Aftertreatments
  • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
  • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
  • H01L21/02678—Beam shaping, e.g. using a mask
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02365—Forming inorganic semiconducting materials on a substrate
  • H01L21/02656—Special treatments
  • H01L21/02664—Aftertreatments
  • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
  • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
  • H01L21/02686—Pulsed laser beam
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02365—Forming inorganic semiconducting materials on a substrate
  • H01L21/02656—Special treatments
  • H01L21/02664—Aftertreatments
  • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
  • H01L21/02691—Scanning of a beam
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
  • Y10T428/00—Stock material or miscellaneous articles
  • Y10T428/12—All metal or with adjacent metals
  • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
  • Y10T428/12674—Ge- or Si-base component

Definitions

• the present invention relates to a method for manufacturing a monocrystalline layer, in particular a semiconductor material, intended for applications in the fields of microelectronics, microsystems, photovoltaics, display or data storage. .
• the present invention relates to a composite structure adapted to obtain a monocrystalline layer, in particular a semiconductor material by application of this manufacturing method.
• a layer of an electrically insulating material is also advantageously disposed between the monocrystalline layer and the support substrate.
• lateral epitaxial growth techniques such as ELO (Epitaxial Lateral Overgrowth) and MELO (Merged Epitaxial Lateral Overgrowth) ensure the growth of a thin layer on a seed substrate, through openings formed. in an electric insulating growth mask. It is thus possible to obtain localized SOI structures (acronym for Silicon On Insulator) by this means.
• a silicon seed support substrate having on the surface an amorphous silicon oxide layer is first formed. Then, openings in the amorphous layer are obtained by etching so as to form a growth mask.
• a first vertical growth of silicon monocrystalline pads is made from the silicon seed substrate in the formed openings.
• the deposition conditions are modified so as to obtain a vertical and lateral growth of silicon to cover the entire SiO 2 mask.
• This selective growth by epitaxy (SEG: Selective Epitaxial Growth) remains a sensitive process and quite delicate to achieve.
• SEG Selective Epitaxial Growth
• the epitaxial fronts resulting from the vertical growth of the silicon pads meet, crystalline defects are formed.
• the surface of the resulting thin layer is not flat and requires a chemical mechanical polishing step to remove excess silicon.
• the width of the SOI type patterns produced is imitated by the low ratio of lateral / vertical growth (estimated at about 1: 1 0) so that the dimensions of the SOI pads obtained do not exceed 500 ⁇ .
• ZMR Zero Melting Recrystallization
• ELO ELO
• the melted zone cools down.
• the zone in contact with the seed substrate recrystallizes according to the crystalline information thereof and leads to a monocrystalline film.
• the films obtained are of low quality because the presence of the mask and the zones of germ create differences in heat dissipation.
• the thermal conductivity of a SiO2 mask is for example about 100 times lower than that of the silicon support.
• the energy source thus horizontally sweeps a region having a vertical thermal resistance discontinuity. In these conditions, it becomes difficult to control the crystallization front and a local coexistence of solid and liquid zones creates an accumulation of stresses resulting in the appearance of crystalline defects.
• the known methods do not make it possible to provide at low cost layers of monocrystalline semiconductor material of very good crystalline quality and large dimensions. Moreover, the constraints inherent in these methods do not allow a wide choice in the nature and quality of the support substrates.
• the subject of the invention is a method for manufacturing a monocrystalline thin film, in particular for applications in the fields of microelectronics, photovoltaics, display, microsystems, data storage, the method comprising the steps of:
• the expression "crystalline information" means the crystalline characteristics of the seed sample n such as the symmetry of the crystal lattice, the mesh parameter of the crystals, the atoms that compose them.
• the term "plane surface" of the support substrate means a substantially flat surface, that is to say having a surface whose topology is not likely to trap or promote the agglomeration of material. liquefied, so as to favor a good anchorage.
• seed sample means a portion of material different from a continuous layer and serving as seed for the formation of a monocrystalline material.
• the proportion of seed sample n and the proportion of thin film n are measured along the y axis perpendicular to the planar surface of the support substrate.
• the proportion of the seed sample n decreases as a function of the distance separating the first peripheral portion n from the second peripheral portion n in the present application.
• the term "the first peripheral portion n and the second peripheral n" flanking the initial interface region n is defined along the x axis, parallel to the plane surface of the substrate and corresponding to the axis of displacement of the energy supply or the support substrate with respect to the energy input.
• initial interface region in the present application refers to the entire contact area between the seed sample n and the thin layer n.
• the term "the initial interface region substantially becoming a solid-liquid interface region” is also understood to mean the possibility that under the effect of the heat generated by local melting of the thin layer n, a small proportion of germ sample n of the interface region n melt.
• the solid-liquid interface n can thus be slightly offset in a direction parallel to the planar surface compared to the initial interface region n.
• the configuration of the solid-liquid interface n remains identical to that of the initial interface region n, ie the proportion of seed sample n also decreases from the first peripheral part n to the second peripheral part n in the solid-liquid interface n so as to facilitate the transfer of the crystalline information.
• the expression "ensuring a relative displacement of the energy input and the support substrate” is meant in this document that the energy input is mobile relative to the fixed support substrate or that the substrate support is mobile and moves relative to the energy supply or that the support substrate and the supply of energy are mobile and their distance evolves.
• the process of the invention allows the controlled crystallization of a thin layer based on the crystal information of a seed sample n.
• the specific configuration of the interface region between the seed sample n and the thin film n makes it possible to provide a large contact area between the thin film n and the crystal information of the seed n.
• This configuration also makes it possible to obtain an interface that is favorable to wetting, unlike an interface that is strictly vertical.
• the energy input is absorbed locally in the thin film n so as to create sufficient thermal agitation to locally liquefy the thin film n.
• the supply remains localized so that upstream of this input, the thermal agitation is limited and solidification takes place. Initially, the solid-liquid interface is created at the interface between the seed sample n and the thin film n.
• this solid-liquid interface is displaced substantially parallel to the flat surface of the support substrate by liquefying and then locally crystallizing a portion of the thin film n according to the crystalline information of the sample germ n, so that a monocrystalline layer of very good quality can be obtained.
• the portion thus crystallized from the thin layer n acts as if it prolongs the seed sample n by transmitting its crystalline information to the n-liquefied portion of the thin film n during its solidification.
• the specific displacement of the energy input allows the creation of a single solidification and crystallization front avoiding the formation of crystalline defects arising from the meeting of several fronts.
• the configuration of the initial interface region n is such that a small amount of seed monocrystalline material is sufficient for carrying out the method, which limits manufacturing costs.
• This configuration of the interface also makes it possible to crystallize several thin layers n; n + 1 stacked to obtain monocrystalline layers n; n + 1 with a single germ sample n.
• the process is adaptable to a wide range of materials to crystallize, including all materials that can be heated locally and selectively relative to the substrate on which the material is deposited.
• the interface between the germ sample n and the thin film n is substantially oblique with respect to the flat surface of the support substrate and to the direction of displacement of the energy supply, this interface being able to be rectilinear or non-rectilinear .
• the proportion of germ sample n of the initial interface region n decreases continuously from the first peripheral part n to the second peripheral part n, which favors the propagation of the crystalline information at the solidification front of the the thin layer n.
• step a) comprises a step of forming a buffer layer n on the flat surface of the support substrate and on which the thin layer n is deposited, the buffer layer n having an amorphous material at the interface with the thin layer n.
• the surface on which the thin layer is crystallized does not provide crystallization sites that are likely to parasitize the crystallization of the thin layer liquefied n.
• the material of the buffer layer n is a thermal insulator.
• the thickness of the buffer layer n can be modulated according to the temperature reached so as to always form a thermal barrier. This makes it possible to use a wide choice of substrate substrate material and in particular to use substrates at low cost and having large dimensions without it deteriorating or being deformed under the effect of heat.
• the flat surface of the support substrate comprises an amorphous material on which the thin layer n is deposited, so that it is not necessary to provide a specific buffer layer n.
• step c) consists in depositing the thin film n in the form of an amorphous material.
• the thin layer is homogeneous and reacts identically to the supply of energy at any point. It is then easy to make sure that the The melting of the n portion of the thin layer n is locally complete, unlike a polycrystalline thin layer whose grain boundaries locally affect the absorption of the energy.
• the deposition of the amorphous n-thin layer requires a lower temperature than the deposition of a polycrystalline layer so that the deposition costs are lower.
• an amorphous layer is liquefied at a lower temperature than a polycrystalline and especially crystalline layer of the same material. Thus, if the seed is of the same material as the thin amorphous layer, it is more easily preserved.
• the thin layer n is made of a semiconductor material.
• the energy input is then advantageously generated using wavelength radiation adapted to be absorbed in the thin film n.
• the energy input is generated by magnetic or electrical excitation, in particular when the material of the thin film n is ferromagnetic or ferroelectric material, for example an oxide of perovskite structure, for which a magnetized bar may serve as a localized energy supply.
• the material of the thin film n is ferromagnetic or ferroelectric material, for example an oxide of perovskite structure, for which a magnetized bar may serve as a localized energy supply.
• the energy input is achieved using at least one radiation source which is selected from an electron gun or a laser whose beam has a maximum intensity on the region to be liquefied.
• at least one radiation source which is selected from an electron gun or a laser whose beam has a maximum intensity on the region to be liquefied.
• the beam of the laser having a very precise wavelength and when the material of the thin layer n is a semiconductor, it has a forbidden band of energy also very precise, the laser can be chosen so that the length emitted wave coincides best with that absorbed by the material of the thin film n.
• the irradiation is specifically and efficiently absorbed by the thin film n.
• the power of the energy supply is adjusted so as to locally liquefy the thin film n over its entire thickness while limiting the impact on the environment of the thin film n, such as on the support substrate .
• the seed sample n comprises a material of identical symmetry and a mesh parameter different from less than 3% of that of the nominal material n crystallized thin layer. This avoids constraints likely to cause the formation of defects, including dislocations, blocking the transmission of the crystalline information of the seed n during crystallization.
• the seed sample n comprises a material identical to that of the thin film n so as to obtain a perfect match of mesh parameter and a thin film n of very good crystalline quality.
• the method comprises between step c) and step e) a step d) of depositing and arranging a confinement layer n on the thin layer n so as to isolate the thin layer n of the atmosphere and promote the propagation of crystalline information.
• This confinement layer n indeed avoids the superficial oxidation of the thin layer n in contact with the atmosphere and promotes the control of the crystallization process by avoiding the agglomeration of the material of the thin film n when it is in liquid form .
• the material of the confinement layer n does not absorb the energy supplied so that the layer n remains solid.
• the wavelength is such that it is not absorbed by the material of the confinement layer n so as not to be liquefied.
• the confinement layer n absorbs less than 10% of the focused energy. As a result, the loss of efficiency of the process when applying energy through the confinement layer n is limited.
• the confinement layer n is typically made of at least one material whose melting temperature is greater than that of the material of the thin layer n so as to remain solid during the supply of energy and not interfere in the crystallization process.
• the confinement layer n has an amorphous material at the interface with the thin layer n.
• the confinement layer n is deposited in the form of an amorphous material so as to limit the deposition costs and not to present parasitic nucleation sites for the crystallization of the thin layer n.
• the method also comprises the steps of: g) forming an n + 1 buffer layer on the thin film n such that the surface opposite to the thin film n of the n + 1 buffer layer; has an amorphous material,
• n + 1 buffer layer having an amorphous material at the interface with the n + 1 thin layer so as to form an initial interface region n + 1 with the germ sample n + 1 the initial interface regimen n + 1 comprising a proportion of germ sample n + 1 and a proportion of thin film n + 1 the initial interface region n + 1 being flanked on either side and parallel to the flat surface, of a first peripheral part n + 1 comprising only the seed sample n + 1 and a second peripheral part n + 1 comprising only the thin layer n + 1 the proportion of germ sample n + 1 along the axis perpendicular to the plane surface, decreasing from the first peripheral part n + 1 to the second peripheral part n + 1,
• the index n applies to a thin film n and the layers surrounding the thin film n, such as the buffer layer n and / or the confinement layer n. It is the same for the index n + 1.
• the thin film n and the thin film n + 1 are co n st itu es of a me riausem i-cond ucteu r, ferromag ne tic or ferroelectric.
• n + 1 buffer layer has an amorphous material at the interface with the n + 1 thin film, the surface on which the n + 1 thin film is crystallized does not provide crystallization sites capable of parasitizing the crystallization of the layer. thin liquefied n + 1.
• step i) comprises depositing an n + 1 confinement layer on the n + 1 thin layer, so as to isolate the n + 1 thin layer from the atmosphere.
• This n + 1 confinement layer avoids the surface oxidation of the n + 1 thin film in contact with the atmosphere and promotes the control of the crystallization process by avoiding agglomeration of the n + 1 thin-film material when is in liquid form.
• the buffer layer n + 1 is formed by a confinement layer n of the thin film n and whose surface opposite to the thin film n has an amorphous material.
• the buffer layer n + 1 is deposited on the confinement layer n of the thin layer n.
• step f) also comprises a step of total or partial removal of the confinement layer n after complete solidification of the thin film n and an n + 1 buffer layer is deposited on the thin film n or on the residue of the confinement layer n.
• the melting temperature of the material of the buffer layer n is greater than that of the material of the thin layer n so as to avoid the melting of the buffer layer n during the liquefaction of the thin layer n.
• the buffer layer n and / or n + 1 is produced in at least one electrical insulating material so as to produce thin films n and / or n + 1 of monocrystalline on insulator materials, advantageously used in applications in the fields of microelectronics, photovoltaics, data display or storage.
• the seed sample n + 1 is formed by the seed sample n. Manufacturing costs are thus reduced. In fact, in the case where the thickness of the seed sample n is greater than that of the thin film n, the seed sample n can emerge from the surface during the deposition. the n + 1 thin layer so that it can again serve to form a new initial interface region with the n + 1 thin layer.
• the seed sample n + 1 is deposited on the n + 1 buffer layer, the seed samples n and n + 1 have different natures of materials.
• the n in and n + 1 layers may have different natures of materials.
• the n + 1 mole layer is made of a material different from that of thin film n, such as silicon and germanium, respectively. It is then easy to form a stack of two layers of monocrystalline materials of different types on the same support substrate. The manufacturing method can then be used to form structures with a wide variety of applications, especially when the material of the thin film n and / or of the thin film n + 1 is a semiconductor material.
• the method comprises a step I) consisting of repeating steps g) to k), the integer n being incremented by one unit, so as to produce a stack comprising a numerous superposition of monocrystalline materials, in particular semiconductor materials.
• the thin film n comprises first and second initial interface regions n with the seed sample n and that the steps e) to f) and / or the steps j) to k) are carried out on the first initial interface region n so as to crystallize a first portion of the thin film n and form an extension of the seed sample in the continuity of the second initial interface region n and the steps respectively e) to f and / or steps j) to k) are performed on the second initial interface region n extended by the first crystallized portion of the thin film n so as to crystallize a second part of the thin film n complementary to the first part .
• the germ sample is made by micromachining the support substrate so that it is not necessary to stick the seed sample to the support substrate.
• step b) or g) comprises a step of structuring a substrate of monocrystalline material by micromachining or lithography and etching so as to form at least one germ sample n and a step of arranging the germ sample n on the support substrate. This makes it possible to conform several seed samples n simultaneously and thus to limit costs.
• step b) and / or g) comprises a bonding of a monocrystalline material substrate onto the support substrate and then a chemical etching so as to reach the desired geometrical configuration to form an initial interface region. n as previously described.
• n is monocrystalline, for the same crystalline symmetry, isotropic or anisotropic chemical etching is possible so that different geometrical configurations can be obtained.
• the single-crystal material may be directly contacted with the flat surface of the support substrate as on one or more layers of material already present on the flat surface of the support substrate.
• a physical machining of the seed sample n can be performed before or after its disposition on the support substrate n.
• step b) and / or g) consists of a direct bonding of the seed sample n and n + 1 on the support substrate.
• direct bonding means a bonding by molecular adhesion, opposed to bonding using layers of adhesives, glue, etc.
• This direct bonding of the sample germinates n and n + 1 on the support substrate can be made directly in contact with the flat surface of the support substrate as in contact with a layer such as a thin film n, buffer layer n interven present on the flat surface of the support substrate.
• step c) comprises the deposition of a thin film n comprising doping species, the realization of steps e) and f) leading to electrically activate at least a portion of the doping species of the thin film n.
• the doped material remains very short at this temperature.
• the time during which the doping species can diffuse into the thin layer n is very short.
• the spatially focused focus of the laser beam (laterally micrometric and nanometric in depth) confi nes the activation process within thin film n.
• the activated dopants are stably fixed in the crystalline structure of the thin film n, the doping profile within the n layer is perfectly controlled, because of the low possibility of diffusion of the dopants.
• the scanning of the thin layer n by laser successively allows the treatment of spatially confined areas to finally crystallize and activate all the dopants present throughout the thin film n.
• the deposition of a thin film n with doping species makes it possible to vary the nature and / or the concentration of the doping species during the deposition of the thin film n. It is then easy to produce a vertical stack with variable doping within the thin layer n, so as to form a vertical succession of junctions, once the electrical activation and crystallization has been performed.
• step c) comprises a step of implantation of dopant species in the thin film n, the carrying out of steps e) and f) leading to electrically activating at least a portion of the doping species of the thin film.
• This method also makes it possible to obtain localized doping, making it possible later to define device zones, such as a PN junction for a diode or source and drain zones for MOS transistors.
• the doping of the thin film n can be obtained by plasma immersion.
• the support substrate is a rigid substrate.
• a rigid support substrate is a substrate having a thickness greater than 50 microns.
• the flat surface of the support substrate may therefore consist of the entire surface of the substrate.
• the supply of energy is preferably carried out by scanning the support substrate.
• the method comprises a step m) after step f) of performing collective surface treatments on the thin film n.
• step a) comprises a step of providing a flexible substrate wound on itself to have a general roll shape, followed by a step of unrolling at least part of the substrate flexible so as to provide the support substrate comprising the flat surface.
• Steps b) to f) can then be implemented from this flat surface.
• This variant is advantageously compatible with a roll-to-roll manufacturing method in which the substrate is initially wound and the assembly manufactured can also be wound at the end of the process.
• the flexible substrate is typically unrolled and moved continuously under stationary positions allowing in particular the deposition of the thin film and the supply of energy.
• the flexible substrate consists of a film of polymer, metal such as aluminum, or carbon.
• the flexible substrate consists of any substrate whose thickness is less than or equal to 50 microns.
• the method comprises a step n) carried out after step f) of winding the assembly comprising the support substrate and the thin film n on itself so that the assembly has a general shape of a roll .
• step a) consists in providing a support substrate comprising a first flat surface and a second flat surface
• step b) comprises disposing a first seed sample n of monocrystalline material having a crystalline information on the first planar surface, and arranging a second seed sample n of material monocrystalline having a crystalline information on the second flat surface, and
• step c) comprises depositing a first thin film n on the first flat surface, so as to respectively form a first initial interface region n comprising a proportion of the first seed sample n and a proportion of the first thin film n, the first initial interface region n being framed on both sides and parallel to the first plane surface, of a first peripheral part n comprising only the first seed sample n and a second peripheral portion n comprising only the first thin layer n, the first proportion of seed sample n, along the axis perpendicular to the first planar surface, decreasing from the first peripheral portion n to the second peripheral portion n,
• a second thin layer n on the second planar surface so as to respectively form a second initial interface region n comprising a proportion of the second seed sample n and a proportion of the second thin layer n, the second region of initial interface n being framed on both sides and parallel to the second flat surface, a peripheral n primary portion comprising only the second seed sample n and a secondary peripheral portion n comprising only the second thin layer n, the second proportion of seed sample n, according to the axis perpendicular to the second planar surface, decreasing from the peripheral n primary part to the secondary peripheral part n.
• the monocrystalline materials of the first and second seed samples n are different and the first and second thin layers n are made of different materials. It is then possible to manufacture two monocrystalline thin films of a different material on the same support substrate with a manufacturing time similar to the manufacture of a single monocrystalline thin film.
• the energy input is achieved by means of two radiation sources disposed respectively on either side of the substrate so as to respectively illuminate the first flat surface and the second flat surface.
• the support substrate is made of silicon
• the buffer layer n is made of SiO 2
• the thin layer n is made of silicon
• the confinement layer n is made of SiO 2
• the energy input is made by a laser with a wavelength ranging from infrared to UV so as to form a monocrystalline monocrystalline layer of silicon on insulator, of the SOI type, which is particularly interesting for applications in high performance microelectronics.
• the support substrate is made of borosilicate glass
• the thin layer is made of silicon
• the confinement layer n is made of SiO 2
• the energy input is produced by a laser of a wavelength from infrared to UV so as to form a monocrystalline silicon monocrystalline layer on SOG (acronym for Silicon On Glass) glass, advantageously used in photovoltaic or display applications.
• the n + 1 thin film is made of silicon and the energy input is produced by a UV laser so as to form a monocrystalline silicon-on-insulator n + 1 thin layer arranged on a thin monocrystalline germanium on insulator layer.
• the monocrystalline n-germanium thin layer is obtained beforehand from a n-thin layer of germanium and the energy input of a laser of wavelength ranging from infrared to UV.
• the invention relates to a composite structure adapted to obtain a monocrystalline layer by providing focused energy comprising:
• a buffer layer n disposed on the flat surface of the support substrate, the surface opposite the support substrate of amorphous material
• a seed sample n of a monocrystalline material having a crystalline information, disposed on the support substrate, a thin layer n disposed on the buffer layer n so as to comprise an initial interface region n with the seed sample n, the initial interface region n comprising a proportion of seed sample n and a proportion of thin layer n, the initial interface region n being framed on both sides and parallel to the plane surface, of a first peripheral part n comprising only the seed sample n and a second peripheral part n comprising only the thin film n, the proportion of germ sample n, along the axis perpendicular to the flat surface, decreasing from the first peripheral portion n to the second peripheral portion n.
• the thin film is made of a semiconductor material, such as silicate or germanium, or a ferromagnetic or ferroelectric material.
• the support substrate is made of borosilicate glass or a film of polymer, carbon or aluminum, and
• the buffer layer n consists of silicon oxide or silicon nitride.
• the composite structure comprises a confinement layer n arranged on the thin layer n so as to isolate the thin layer n from the atmosphere and promote the propagation of the crystalline information.
• This confinement layer n indeed avoids the superficial oxidation of the thin layer n in contact with the atmosphere and promotes the control of the crystallization process by avoiding the agglomeration of the material of the thin film n when it is in liquid form .
• FIG. 1 to 6 schematically illustrate a first embodiment of the method according to the invention.
• FIGS. 9, 10 and 11 show variants of composite structures suitable for implementing the method of the invention.
• FIG. 12 is a perspective view of an embodiment of the invention.
• FIG. 15 illustrates an alternative embodiment of the method according to the invention.
• FIGS. 16 to 19 illustrate a second embodiment of the method according to the invention
• FIG. 20 further illustrates an alternative embodiment of the method according to the invention.
• a buffer layer n; 2 of amorphous silicon oxide with a thickness of about 400 nm is deposited on a flat surface of a glass substrate support 3 by CVD (acronym for Chemical Vapor Deposition), PECVD (acronym for Plasma Enhanced Chemical Vapor Deposition), LPCVD (acronym for Low Pressure Chemical Vapor Deposition) or any other method of low temperature deposition and low pressures, easy to implement on large support substrates 3 and / or sensitive substrates.
• This buffer layer n; 2 of SiO2 has a melting point higher than that of silicon.
• the sample germinates n; 4 is prepared from a monocrystalline silicon substrate on the back surface of which is deposited a hard mask, for example silicon nitride by PECVD (acronym Plasma-Enhanced Chemical Vapor Deposition).
• PECVD cronym Plasma-Enhanced Chemical Vapor Deposition
• This mask 5 serves in particular, to protect the back surface of the substrate against the chemical etching effected by the lerquency for the conformation of the flanks 6 of the seed sample n; 4.
• the silicon substrate is then cut to form one or more easy-to-handle seed samples, e.g., a sample n; 4 having a surface of 3 x 3 mm 2 and a thickness of about 325 micrometers.
• FIG. 2 illustrates the direct collation of the front surface of the seed sample n; 4 on a peripheral edge of the buffer layer n; 2, following prior chemical cleaning of the surfaces contacted by typical cleaning sequences with CARO (H 2 SO 5 ) solutions, and / or RCA.
• An annealing of bonding and degassing reinforcement is then carried out for example around 400 ° C. during a period of a few minutes to a few hours under a nitrogen atmosphere.
• Figure 3 illustrates the chemical etching performed on the seed sample n; 4 so as to obtain the configuration of the flanks 6 necessary for the subsequent obtaining of an initial interface region 7 with the thin film n; Having a large contact area between the mid-layer; 1 to crystallize and the monocrystalline material for the volume of the initial interface region n; 7 formed.
• the application of a solution of potassium hydroxide KOH on the sample n; 4 monocrystalline silicon symmetry ⁇ 100> allows in particular to obtain flanks 6 having a regular slope forming a bevel.
• the size of the bevel depends on the concentration of KOH in the etching solution and the size of the sample n; 4.
• the rear and flat surface of sample n; 4 protected by nitride mask 5 is not etched.
• FIG. 4 illustrates the partial etching of the Si 3 N 4 mask by a phosphoric acid solution H 3 PO 4 so as to expose and be able to cover at least part of the flanks 6 of the seed sample n; 4 by deposition of a thin film n; 1 of amorphous silicon.
• Deposition of the thin film n; 1 is achieved by an inexpensive deposition technique such as LPCVD to a thickness of about 200 nm.
• the interface thus formed in this embodiment is oblique and straight.
• the initial interface region n; 7 is inserted, in a direction parallel to the flat surface of the support substrate, between a first peripheral portion n; 8 comprising only the seed sample n; 4 and a second peripheral part n; 9 comprising only the thin layer 1.
• FIG. 5 illustrates a new partial etching of the Si3N4 mask 5 by a solution of H3PO4 so as to be able to expose the inital interface region n; 7 and deposit a confinement layer n; 1 1 amorphous SiO2 material on the thin film n; 1 including the initial interface region 7.
• the confinement layer n; 1 1 is deposited with a thickness of 400 nm by an inexpensive deposition technique such as LPCVD.
• the mask 5 of Si3N is fully etched at the step illustrated in FIG. 4 so that all of the rear surface of the sample n; 4 is exposed, thus facilitating the subsequent deposition of layers.
• Figure 6 illustrates a step of locally supplying energy to the thin film n; 1 through a radiation 12 from a laser beam emitting at a silicon absorption wavelength of the thin film n; 1 and for which the confinement layer n; 1 1 and the buffer layer n; 2 in SiO2 are completely transparent.
• the wavelengths in the UV are adapted.
• the laser can be continuous or pulsed. This may be in particular a UV pulsed laser, for example XeCI emitting at the wavelength of 308 nm.
• the beam 12 from the laser scans the entire surface with a frequency of 6000 Hz, an energy of 150 mJ, a power of 900W and a recovery of pulses of 60%, in a direction from the first peripheral portion n; 8 of the initial interface region n; 7 to the second peripheral part n; 9 away from the germ sample n; 4 and beyond.
• the local portion n; 13 of the thin film n; 1 illuminated absorbs energy and causes thermal agitation of the thin layer 1.
• the local increase of the temperature in the local portion n; 13 illuminated leads to melting of the material and liquefaction of a portion n; 13 of the thin layer 1.
• the initial interface region n; 7 then becomes substantially a solid-ionic interface region; 4.
• the displacement of the beam 12 generates the solidification by cooling of the portion n; 1 3 liquefied upstream of the beam 12, from the crystalline information from the seed n; 4.
• solidifying the material of the thin layer not; 1 is organized and forms a crystal lattice duplicating the crystalline imprint provided by the seed sample n; 4.
• the large contact area between thin film n; 1 and the germ sample n; 4 for an initial interface region n; 7 of given dimensions contributes to the propagation of the crystalline information of the sample germ n; 4 during the cooling of the thin layer 1.
• the solidified region acts as an extension of the seed sample n; 4 and the solid-liquid interface n; 14 moves with the displacement of the beam 12 while propagating the crystal information of the seed n; 4.
• the crystallization front 14 has substantially the same configuration as that of the inital interface region n; 7 (and flanks 6) and propagates continuously following the illuminated portion n; 13 in the thin layer 1.
• the crystalline information of the germ n; 4 is then propagated over the entire thin film n; 1 by a single crystallization front 14.
• the monocrystalline obtained then has a very good crystalline quality and a surface whose peak-valley roughness is less than 10 nm with a variation of plus or minus 3 nm RMS.
• the confinement layer n; 1 1 is formed of a thick substrate having a thickness of the order of 100 to 700 ⁇ for example, and transparent to the wavelength of the laser used to liquefy the thin layer 1, such as a glass substrate.
• This thick substrate 1 1 then has sufficient mechanical rigidity to support the thin layer 3 and make it possible to dissociate the support substrate 3 from the thin layer 1.
• the thin film n; 1 initial is in germanium with a first germ sample n also in germanium.
• the wavelengths adapted to be absorbed by germanium range from infrared to UV.
• the same laser as that previously described can therefore be used.
• a second thin layer n + 1; 1 of an amorphous silicon semiconductor material is crystallized by energy input according to the method previously described.
• the confinement layer n; 1 1 of amorphous SiO 2 previously deposited on the thin film n; 1 of silicon is used as n + 1 buffer layer; 2 on which a second the sample germinates n + 1; 4 of silicon is glued and etched so as to have flanks 6 to form the inital interface region n; 7 configured as previously described.
• the second thin layer n + 1; 1 amorphous silicon is deposited by LPCVD to a thickness of 200 nm.
• a second n + 1 confinement layer; 1 1 of amorphous SiO 2 is also deposited by CVD so as to encapsulate the new initial interface region 7 and the second n + 1 thin layer; 1.
• Local irradiation with a mobile beam 12 under the same conditions as those previously described is applied so as to liquefy the silicon, then solidify it by cooling in contact with the seed sample n + 1; 4 to crystallize and propagate the crystal information of the n + 1 seed; 4 with the advancement of the solidification front or solid-liquid interface region n; 14 within the n + 1 thin layer; 1 of silicon, following the displacement of the beam 12.
• the sample germinates n; 4 initial has a macroscopic character such that its thickness may be sufficient to be used as the seed sample n + 1; 4 for the different levels of thin layers n; n + 1; 1, especially when the thin layers n; 1 and n + 1; 1 are made of identical materials.
• the seed n; 4 is common to the thin films n; 1 and n + 1; 1 to recrystallize. This unique macroscopic seed gives the possibility to recrystallize several hundreds of nanometric layers.
• FIG. 9 illustrates a composite structure 15 suitable for the manufacture of a thin film n; 1 monocrystalline on a support substrate 3 according to an alternative embodiment of the invention.
• the composite structure 15 comprises a support substrate 3 of borosilicate glass on the periphery of which is disposed a seed sample n; 4 monocrystalline silicon.
• the flanks 6 of the sample germ n; 4 were prepared beforehand by chemical etching performed with an etching agent such as HNA (acid mixture comprising HF, HNO 3 and CH 3 COOG) so as to have flanks 6 of a concave surface.
• HNA acid mixture comprising HF, HNO 3 and CH 3 COOG
• a thin layer n; 1 in amorphous silicon semiconductor material is then deposited by LPCVD directly on the surface of the support substrate 3, in the absence of buffer layer n; 2.
• the support substrate 3 being consisting of an amorphous material, it does not have parasitic nucleation sites for the crystallization of the thin layer 1.
• the initial interface region 7 between thin film n; 1 and the germ n; 4 then has a proportion of seed sample n; 4 and a proportion of thin film n; 1 variables in a direction parallel to the flat surface of the support substrate 3.
• the proportion of germ sample n; 4 decreases indeed since a first peripheral part n; 8 to a second peripheral part n; 9 flanking the initial interface region 7.
• This configuration of the initial interface region 7 thus allows contact over a large area between the seed material n; 4 and the material of the thin film n; 1 amorphous.
• a beam 12 of a laser irradiating at 308 nm then illuminates the thin layer 1. Irradiation is performed as previously described by scanning from the initial interface region n; 7 contiguous to the first peripheral part n; 8 to the second peripheral part n; 9 and finally moving away from the seed sample 3, over the rest of the thin layer 1.
• Thin layer n; 1 then warms up locally until it liquefies on a local portion n; Illuminated while the sample germinates; 4 retains much of its solid and monocrystalline character.
• the support substrate 3 being made of a thermal insulating material, it forms an insulating barrier and horizontally confines heating of the thin layer n; 1 irradiated according to the displacement of the beam 12.
• This insulating characteristic makes it possible to prevent heating of the support 3 during liquefaction of the thin layer 1. This advantageously avoids inducing thermomechanical stresses in the thin film n; 1 may lead to the formation of defects during cooling.
• the crystallization front 14 in the thin film n; 1 continues to transmit the crystalline information of the germ n; 4 by contact with a thin film portion n; 1 being solidified.
• the thin film n; 1 is deposited in amorphous form by an inexpensive deposition process but the process of the invention can be used from monocrystalline thin films 1 of poor quality for example or thin layers 1 polycrystalline.
• the merger of the portion n; 13 is more complex to control because the distribution of heat is not uniform due to the presence of grain boundaries in the material but once reached, the layer 1 can be recrystallized effectively from the crystalline information. of the sample germ n; 4.
• the sample germinates n; 4 may be directly disposed on the support substrate 3 when it is formed of an amorphous material otherwise good thermal insulation. According to a variant of real isation not lustrous, the sample germinates n; 4 may be formed prior to the deposition of the thin film n; 1 by micromachining of the support substrate 3. Moreover, the size of the sample germinates n; 4 is the result of a compromise between the cost of the monocrystalline material used and the difficulty of handling a sample of too small dimensions. A sample of small dimensions will require in particular the use of specific and expensive equipment. A happy medium is found, for example, with a seed sample n; 4 of a surface of a few square millimeters over a thickness of some hundreds of microns for example. These dimensions are clearly sufficient for the propagation of the crystalline information over the entire surface of the thin film n; 1 when the configuration of the initial interface region n; 7 as previously described is respected.
• FIG. 10 illustrates an alternative embodiment implemented on a composite structure 15 comprising a buffer layer n; 2 inserted between a set consisting of the seed sample n; 4 of silicon and the thin film n; 1 in amorphous silicon and a support substrate 3 made of glass.
• This method also applies the focused energy source 12 directly to the exposed surface of the magnetic layer 1, in the absence of a confinement layer n; 1 1.
• Buffer layer n; 2 is formed in an amorphous SiO 2 material so as to avoid creating parasitic nucleation sites and to limit the costs of deposition.
• Buffer layer n; 2 advantageously has a melting point (1600 ° C.) greater than that of the thin film n; 1 (1414 ° C) so as not to interfere in the crystallization process of silicon.
• the buffer layer n; 2 is advantageously made of a thermal insulating material so as to confine the energy locally i brought to the system.
• the minimum thickness of the buffer layer n; 2 is then conditioned by its thermal insulation efficiency and its ability to avoid dissipation vertical thermal. The maximum thickness has no limit because the buffer layer n; 2 can fully form the support substrate 3.
• this confinement makes it possible to maintain a horizontal temperature gradient in the thin film n; 1 and a crystallization front 14 allowing the liquefied zone 13 to maintain contact with a solid portion having the crystal information of the seed sample n; 4.
• this buffer layer n; 2 allows a greater freedom of choice of the material constituting the support substrate 3 and allows the use in particular of low cost substrates, not transparent to the wavelength of the laser 12 used.
• Figure 1 1 illustrates a composite structure 1 5 adapted to the crystallization of a thin film n; 1 comprising a seed sample n; 4, whose flanks 6 have a convex surface, on the buffer layer n; 2 and a thin film n; 1 encapsulated by a confinement layer n; 1 1 also covering the initial interface region 7.
• This confinement layer n; 1 1 is formed of an amorphous material so as to limit the costs of deposition and avoid the creation of parasitic nucleation sites.
• the confinement layer n; 1 1 has at most a low absorption coefficient of the energy supplied to the composite structure 15 so that the beams 12 can pass through it to mainly irradiate the thin layer 1.
• the confinement layer n; 1 1 has a melting point higher than that of the thin layer 1.
• the confinement layer makes it possible to prevent agglomeration phenomena likely to appear on thin film n; 1 liquefied when its surface is not protected, these phenomena may lead to breaks in the propagation of the crystalline information.
• the confinement layer n; 1 1 also avoids all chemical interactions between the thin film n; 1 and the atmosphere (oxidation, absorption ...) that can disrupt the crystallization process.
• the confinement layer n; 1 1 has dewetting properties vis-à-vis the liquid phase of the thin layer 1, the contracted liquid phase is exhausted to the seed sample n; 4 or to the crystallized layer 1. Good contact with sample n; 4 is conserved and a good transmission of the crystalline information takes place.
• Fig. 12 is a perspective illustration of a composite structure in which the sample seeds n; 4 has a length substantially equal to the width of the support substrate 3 along the z axis and extends transversely close to a transverse edge of the flat surface of the support substrate 3.
• the thin layer n; 1 is deposited on the support substrate 3 so as to form an initial interface region 7 as defined above with the sample n; 4.
• the beam 12 used has a width inferior to that of the inital interface region n; 7 and a length substantially equal to the width of the support substrate 3 and therefore the width of the thin film n; 1 along the z axis.
• the irradiation then consists of a single scan of the entire surface of the thin film n; 1 parallel to the planar surface of the support substrate 3 (along the x-axis) starting with the initial interface region n; 7 contiguous to the peripheral part n; 8.
• This embodiment allows the propagation of a single crystallization front 14 formed at the initial interface region 7 and extending over the entire width of the thin film n; 1 (along the z axis).
• a seed sample n; 4 machined on only a small proportion in order to recycle the latter.
• Figs. 13 and 14 illustrate a perspective view of a composite structure comprising a seed sample n; 4 disposed at an angle of the support substrate 3 and having lateral dimensions smaller than the width (along the z axis) and the length of the support substrate 3 (along the x axis).
• the configuration of the sample germinates n; 4 is designed to form with the thin film n; 1 of the first and second initial interface regions 7, 7 'as previously defined.
• a first scan of a laser beam 12 having a length similar to the dimension of a peripheral lateral side of the sample n; 4 (along the z axis) is started from a first inital interface region n; 7. This first scan leads to crystallize a first part of the thin film n; 1 forming an extension of the sample germ n; 4 in the continuity of the second initial interface region n; 7 '.
• a second scan along the x-axis is then performed from the second initial interface region 7 'extended by the first thin-film portion n; 1 having been crystallized with a beam 12 whose length is similar to that of the second region 7 'extended.
• a second part of the thin layer 1, complementary to the first part, is then crystallized.
• the sample germ n; 4 is removed for recycling.
• An x-axis scan may be performed from the second initial interface region 7 'so as to propagate the crystalline information for crystallization of the second portion of the thin film 1.
• a germ sample n; 4 extends transversely and in the center of a support substrate 3, the seed germ n; 4 having a length substantially equal to the width of the support substrate 3.
• a thin layer n; 1 amorphous is deposited so as to create first and second interface regions 7; 7 'on both sides of the sample germ n; 4.
• Two bundles 12 having a length similar to the length of the seed sample n; 4 are then used at the same time to scan the thin layer n; 1 from the two initial interface regions 7; 7 'starting from the center of the support substrate 3 and moving away from the seed sample n; 4 to the peripheral sides of the support substrate 3. In this way, the cycle time of the process for manufacturing a thin film n; 1 is greatly reduced.
• the surfaces of the sidewalls 6 can be oblique and have a linear regular slope, a concave or convex surface.
• the sample germinates n; 4 may be prepared so as to have any flank configuration 6 adapted to obtain an initial interface region n; 7.7 'as previously described, namely any configuration allowing gradient decrease, variable or not, of the proportion of seed sample n; 4 in the initial interface region n; 7.7.
• FIG. 15 illustrates a variant of step c) of the method in which the thin film n; 1 comprises doping species.
• These doping species can be introduced into the thin film n; 1 during the deposition of the thin layer, so that it is easy to form a stack of sublayers, within the thin layer, each comprising a concentration of dopant species or a different type of doping species.
• the doping species are introduced by implantation or plasma immersion which advantageously allows local control, laterally and in depth, the concentration and nature of the dopant species introduced into the thin layer 1.
• the energy input according to steps e) and f) of the method allows the electrical activation of the doping species at the same time that the thin layer is crystallized.
• the duration of the energy supply for crystallization being locally very short, especially when performed by electron gun or laser, the doping species diffuse little in the thin film n; 1.
• the profile of activated dopant species is very precise.
• Step a) consists in providing a flexible substrate wound on itself so as to have a roll shape extending along the axis z as illustrated in FIG. 16.
• Part of the flexible substrate is unwound (FIG. 17) so as to provide a support substrate 3 comprising a flat surface and allow the arrangement of the seed sample n; 4 according to step b) and the deposition of the thin layer (1) according to step c) of the method.
• the thin layer is deposited and an energy input is applied, for example by a fixed laser beam 12, starting with the initial interface region n; 7 between the thin layer n; 1 and the seed sample 4.
• the support substrate 3 is moved in the direction indicated by the x-axis (step f) with respect to the energy supply source 12 and with respect to the stationary device for depositing the thin film n; 1.
• the movement of the support substrate 3 is preferably implemented so that the planar surface has at least one dimension similar to that of the energy input when the planar surface receives the energy input.
• the locally liquefied thin film is then locally crystallized by its removal from the energy source on the basis of the crystal information of the seed sample n; 4.
• FIG. 19 illustrates a step n) of the method in which the assembly comprising the support substrate 3 and the thin film n; 1 crystallized again is rolled on itself so as to have a general shape of roll.
• the method comprises a step m) of performing collective surface treatments on the support substrate 3 covered with the thin film n; 1 not rolled up. It is then possible to perform the cutting of large plates dimensions from the support substrate 3 covered with the thin film n; 1 crystallized, for the realization for example of solar panels.
• a buffer layer n; 2 is deposited on the flat face before the deposition of the thin film n; 1 and a confinement layer n; 11 is deposited on the thin layer n; 1 before the latter is exposed to energy input.
• Figure 20 illustrates an alternative embodiment in which the support substrate 3 comprises a first planar surface and a second planar surface.
• a first sample germ n; 4 is disposed on the first planar surface and then a first n thin layer; 1 is deposited on the first planar surface so as to create a first initial interface region n; 7.
• a second germ sample n; 4 is disposed on the second flat surface and a second n thin layer; 1 is deposited on the second planar surface so as to create a second initial interface region n; 7.
• Two sources of energy input such as two laser beams, located on either side of the support substrate 3 respectively irradiate the first thin layer n; 1 and the second thin layer n; 1 so as to achieve the crystallization of the first and second thin layers 1 simultaneously.
• the irradiation of the first and second thin layers 1 is shifted in time.
• the method of the invention proposes a low cost method for both the steps used and for the raw material consumed, the process is easy to implement on large dimensions, flexible with respect to the nature of the support substrate 3. It is also adaptable to a wide range of materials, in particular semiconductor materials, and repeatable several times on the same substrate support 3 thus allowing the formation of several monocrystalline thin layers 1 which may be of the same nature or of a different nature.
• the method also guarantees a very good control of the crystallization process thanks to a physicochemical and geometric confinement of the thin film n; 1 to crystallize.
• This confinement coupled with the use of a focused and directional energy supply 12 allows the complete transformation of a layer 1 into a semiconductor material, preferably an amorphous material, in intimate contact with a seed n; 4 monocrystalline in a layer of monocrystalline material of very good quality.

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