FR2993702B1 - Procede de fabrication d’une couche monocristalline - Google Patents

Procede de fabrication d’une couche monocristalline

Info

Publication number
FR2993702B1
FR2993702B1 FR1256898A FR1256898A FR2993702B1 FR 2993702 B1 FR2993702 B1 FR 2993702B1 FR 1256898 A FR1256898 A FR 1256898A FR 1256898 A FR1256898 A FR 1256898A FR 2993702 B1 FR2993702 B1 FR 2993702B1
Authority
FR
France
Prior art keywords
producing
monocrystalline layer
monocrystalline
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1256898A
Other languages
English (en)
Other versions
FR2993702A1 (fr
Inventor
Lamine Benaissa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR1256898A priority Critical patent/FR2993702B1/fr
Priority to PCT/FR2013/051688 priority patent/WO2014013173A1/fr
Priority to EP13747450.8A priority patent/EP2875519A1/fr
Priority to US14/415,980 priority patent/US9777393B2/en
Publication of FR2993702A1 publication Critical patent/FR2993702A1/fr
Application granted granted Critical
Publication of FR2993702B1 publication Critical patent/FR2993702B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/005—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge
    • C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12674—Ge- or Si-base component
FR1256898A 2012-07-17 2012-07-17 Procede de fabrication d’une couche monocristalline Expired - Fee Related FR2993702B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1256898A FR2993702B1 (fr) 2012-07-17 2012-07-17 Procede de fabrication d’une couche monocristalline
PCT/FR2013/051688 WO2014013173A1 (fr) 2012-07-17 2013-07-15 Procédé de fabrication d'une couche monocristalline
EP13747450.8A EP2875519A1 (fr) 2012-07-17 2013-07-15 Procédé de fabrication d'une couche monocristalline
US14/415,980 US9777393B2 (en) 2012-07-17 2013-07-15 Method for producing a single-crystalline layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1256898A FR2993702B1 (fr) 2012-07-17 2012-07-17 Procede de fabrication d’une couche monocristalline

Publications (2)

Publication Number Publication Date
FR2993702A1 FR2993702A1 (fr) 2014-01-24
FR2993702B1 true FR2993702B1 (fr) 2015-03-13

Family

ID=47080683

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1256898A Expired - Fee Related FR2993702B1 (fr) 2012-07-17 2012-07-17 Procede de fabrication d’une couche monocristalline

Country Status (4)

Country Link
US (1) US9777393B2 (fr)
EP (1) EP2875519A1 (fr)
FR (1) FR2993702B1 (fr)
WO (1) WO2014013173A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3071662B1 (fr) * 2017-09-25 2019-11-01 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de preparation d'une structure ayant une couche en materiau semi-conducteur monocristallin transferable et structure obtenue selon un tel procede
US10283365B1 (en) * 2017-11-13 2019-05-07 Globalfoundries Inc. Technique and related semiconductor devices based on crystalline semiconductor material formed on the basis of deposited amorphous semiconductor material
KR102639769B1 (ko) * 2018-11-22 2024-02-26 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4046618A (en) * 1972-12-29 1977-09-06 International Business Machines Corporation Method for preparing large single crystal thin films
JPS5734331A (en) * 1980-08-11 1982-02-24 Toshiba Corp Manufacture of semiconductor device
US4559086A (en) * 1984-07-02 1985-12-17 Eastman Kodak Company Backside gettering of silicon wafers utilizing selectively annealed single crystal silicon portions disposed between and extending into polysilicon portions
US6913649B2 (en) * 2003-06-23 2005-07-05 Sharp Laboratories Of America, Inc. System and method for forming single-crystal domains using crystal seeds
TWI317975B (en) 2006-12-06 2009-12-01 Huang Chung Cheng A thin-film crystallization method with seed induction
KR101397567B1 (ko) * 2007-01-24 2014-05-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체막의 결정화 방법 및 반도체장치의 제작방법
US20100304035A1 (en) * 2009-05-27 2010-12-02 Integrated Photovoltic, Inc. Plasma Spraying and Recrystallization of Thick Film Layer

Also Published As

Publication number Publication date
US20150191847A1 (en) 2015-07-09
EP2875519A1 (fr) 2015-05-27
FR2993702A1 (fr) 2014-01-24
US9777393B2 (en) 2017-10-03
WO2014013173A1 (fr) 2014-01-23

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