EP2852865A1 - Procede de preparation de surfaces - Google Patents
Procede de preparation de surfacesInfo
- Publication number
- EP2852865A1 EP2852865A1 EP13728464.2A EP13728464A EP2852865A1 EP 2852865 A1 EP2852865 A1 EP 2852865A1 EP 13728464 A EP13728464 A EP 13728464A EP 2852865 A1 EP2852865 A1 EP 2852865A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- function
- isomerizable
- copolymer
- crosslinkable
- block copolymer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 6
- 229920001400 block copolymer Polymers 0.000 claims abstract description 36
- 238000000034 method Methods 0.000 claims abstract description 27
- 238000009826 distribution Methods 0.000 claims abstract description 13
- 229920001577 copolymer Polymers 0.000 claims description 44
- 239000000243 solution Substances 0.000 claims description 14
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 11
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 9
- 239000002904 solvent Substances 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 8
- -1 (2-acryloyloxy) ethyl isocyanurate Chemical compound 0.000 claims description 7
- 238000004132 cross linking Methods 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 7
- 229920000361 Poly(styrene)-block-poly(ethylene glycol) Polymers 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 239000006185 dispersion Substances 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 5
- 230000008020 evaporation Effects 0.000 claims description 5
- 239000000178 monomer Substances 0.000 claims description 5
- 230000008520 organization Effects 0.000 claims description 5
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 5
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 4
- 230000000694 effects Effects 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 4
- 230000000737 periodic effect Effects 0.000 claims description 4
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 claims description 4
- 239000007983 Tris buffer Substances 0.000 claims description 3
- 230000003667 anti-reflective effect Effects 0.000 claims description 3
- 229920000359 diblock copolymer Polymers 0.000 claims description 3
- 125000005395 methacrylic acid group Chemical group 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- ANRHNWWPFJCPAZ-UHFFFAOYSA-M thionine Chemical group [Cl-].C1=CC(N)=CC2=[S+]C3=CC(N)=CC=C3N=C21 ANRHNWWPFJCPAZ-UHFFFAOYSA-M 0.000 claims description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 238000001914 filtration Methods 0.000 claims description 2
- 238000001459 lithography Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims description 2
- 238000003860 storage Methods 0.000 claims description 2
- 230000003075 superhydrophobic effect Effects 0.000 claims description 2
- 229920000428 triblock copolymer Polymers 0.000 claims description 2
- 230000001737 promoting effect Effects 0.000 abstract description 2
- 230000007547 defect Effects 0.000 description 14
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 9
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 8
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical compound C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 5
- 239000004793 Polystyrene Substances 0.000 description 4
- 238000000089 atomic force micrograph Methods 0.000 description 4
- 238000004630 atomic force microscopy Methods 0.000 description 4
- 229920000747 poly(lactic acid) Polymers 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 4
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 3
- DMLAVOWQYNRWNQ-UHFFFAOYSA-N azobenzene Chemical group C1=CC=CC=C1N=NC1=CC=CC=C1 DMLAVOWQYNRWNQ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 3
- 238000001338 self-assembly Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229940086542 triethylamine Drugs 0.000 description 3
- MYRTYDVEIRVNKP-UHFFFAOYSA-N 1,2-Divinylbenzene Chemical compound C=CC1=CC=CC=C1C=C MYRTYDVEIRVNKP-UHFFFAOYSA-N 0.000 description 2
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 2
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 102100026735 Coagulation factor VIII Human genes 0.000 description 2
- 101000911390 Homo sapiens Coagulation factor VIII Proteins 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- 244000028419 Styrax benzoin Species 0.000 description 2
- 235000000126 Styrax benzoin Nutrition 0.000 description 2
- 235000008411 Sumatra benzointree Nutrition 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M acrylate group Chemical group C(C=C)(=O)[O-] NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- WURBFLDFSFBTLW-UHFFFAOYSA-N benzil Chemical compound C=1C=CC=CC=1C(=O)C(=O)C1=CC=CC=C1 WURBFLDFSFBTLW-UHFFFAOYSA-N 0.000 description 2
- 229960002130 benzoin Drugs 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 235000019382 gum benzoic Nutrition 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- VHRYZQNGTZXDNX-UHFFFAOYSA-N methacryloyl chloride Chemical compound CC(=C)C(Cl)=O VHRYZQNGTZXDNX-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- BBEAQIROQSPTKN-UHFFFAOYSA-N pyrene Chemical compound C1=CC=C2C=CC3=CC=CC4=CC=C1C2=C43 BBEAQIROQSPTKN-UHFFFAOYSA-N 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- 229920002818 (Hydroxyethyl)methacrylate Polymers 0.000 description 1
- HSOOIVBINKDISP-UHFFFAOYSA-N 1-(2-methylprop-2-enoyloxy)butyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC(CCC)OC(=O)C(C)=C HSOOIVBINKDISP-UHFFFAOYSA-N 0.000 description 1
- KWVGIHKZDCUPEU-UHFFFAOYSA-N 2,2-dimethoxy-2-phenylacetophenone Chemical compound C=1C=CC=CC=1C(OC)(OC)C(=O)C1=CC=CC=C1 KWVGIHKZDCUPEU-UHFFFAOYSA-N 0.000 description 1
- BJELTSYBAHKXRW-UHFFFAOYSA-N 2,4,6-triallyloxy-1,3,5-triazine Chemical compound C=CCOC1=NC(OCC=C)=NC(OCC=C)=N1 BJELTSYBAHKXRW-UHFFFAOYSA-N 0.000 description 1
- RBTBFTRPCNLSDE-UHFFFAOYSA-N 3,7-bis(dimethylamino)phenothiazin-5-ium Chemical compound C1=CC(N(C)C)=CC2=[S+]C3=CC(N(C)C)=CC=C3N=C21 RBTBFTRPCNLSDE-UHFFFAOYSA-N 0.000 description 1
- OZAIFHULBGXAKX-VAWYXSNFSA-N AIBN Substances N#CC(C)(C)\N=N\C(C)(C)C#N OZAIFHULBGXAKX-VAWYXSNFSA-N 0.000 description 1
- GAWIXWVDTYZWAW-UHFFFAOYSA-N C[CH]O Chemical group C[CH]O GAWIXWVDTYZWAW-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910020486 P2VP Inorganic materials 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- 238000005311 autocorrelation function Methods 0.000 description 1
- 239000003637 basic solution Substances 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 210000001520 comb Anatomy 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000011258 core-shell material Substances 0.000 description 1
- 238000005314 correlation function Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000005315 distribution function Methods 0.000 description 1
- YQGOJNYOYNNSMM-UHFFFAOYSA-N eosin Chemical compound [Na+].OC(=O)C1=CC=CC=C1C1=C2C=C(Br)C(=O)C(Br)=C2OC2=C(Br)C(O)=C(Br)C=C21 YQGOJNYOYNNSMM-UHFFFAOYSA-N 0.000 description 1
- 230000032050 esterification Effects 0.000 description 1
- 238000005886 esterification reaction Methods 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 230000000763 evoking effect Effects 0.000 description 1
- 238000002270 exclusion chromatography Methods 0.000 description 1
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthrene Natural products C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 description 1
- RMBPEFMHABBEKP-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2C3=C[CH]C=CC3=CC2=C1 RMBPEFMHABBEKP-UHFFFAOYSA-N 0.000 description 1
- GNBHRKFJIUUOQI-UHFFFAOYSA-N fluorescein Chemical compound O1C(=O)C2=CC=CC=C2C21C1=CC=C(O)C=C1OC1=CC(O)=CC=C21 GNBHRKFJIUUOQI-UHFFFAOYSA-N 0.000 description 1
- 125000002485 formyl group Chemical class [H]C(*)=O 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000010954 inorganic particle Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- OBACEDMBGYVZMP-UHFFFAOYSA-N iron platinum Chemical compound [Fe].[Fe].[Pt] OBACEDMBGYVZMP-UHFFFAOYSA-N 0.000 description 1
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 1
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000006249 magnetic particle Substances 0.000 description 1
- 238000007620 mathematical function Methods 0.000 description 1
- 229960000907 methylthioninium chloride Drugs 0.000 description 1
- 239000000693 micelle Substances 0.000 description 1
- 238000000386 microscopy Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N o-biphenylenemethane Natural products C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000011146 organic particle Substances 0.000 description 1
- 229920000885 poly(2-vinylpyridine) Polymers 0.000 description 1
- 229920003228 poly(4-vinyl pyridine) Polymers 0.000 description 1
- 229920000075 poly(4-vinylpyridine) Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920001195 polyisoprene Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000000425 proton nuclear magnetic resonance spectrum Methods 0.000 description 1
- 238000010526 radical polymerization reaction Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003381 solubilizing effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 235000021286 stilbenes Nutrition 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- OWXBIRAFHWASMS-UHFFFAOYSA-M thionine acetate Chemical compound CC([O-])=O.C1=CC(N)=CC2=[S+]C3=CC(N)=CC=C3N=C21 OWXBIRAFHWASMS-UHFFFAOYSA-M 0.000 description 1
- 239000013598 vector Substances 0.000 description 1
- 125000002348 vinylic group Chemical group 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/001—Phase modulating patterns, e.g. refractive index patterns
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00031—Regular or irregular arrays of nanoscale structures, e.g. etch mask layer
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0147—Film patterning
- B81C2201/0149—Forming nanoscale microstructures using auto-arranging or self-assembling material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
- Y10T428/24612—Composite web or sheet
Definitions
- the invention relates to a method for the spatial distribution of a surface luminous intensity promoting a promoter of order and spatial coherence, serving as a guide for the organization on the surface of nanoscale and superimposed surfaces, in particular block copolymers.
- the desired structuring (for example, generation of domains perpendicular to the surface having no defects in the ordered arrangement) nevertheless requires the preparation of the support on which the block copolymer is deposited in order to control the arrangement of the domains by eliminating the defects (disclinations, dislocations, ).
- two techniques are more particularly used: physical epitaxy
- the Applicant has discovered that a surface coated with a (co) -polymer comprising isomerizable functions allowed, after exposure to a spatial distribution of light intensity, the creation of patterns in relief. These patterns allow the deposition of block copolymers with defect-free structuring, when the thickness of the block copolymer layer covering the relief surface is properly adjusted, and this in short times and at low cost.
- the (co) -polymer comprising the isomerizable functions comprises crosslinkable functions. This is particularly useful when the solution containing the block copolymer is capable of solubilizing the (co) polymer containing the isomerizable functions.
- the method for self-assembly of block copolymers on a treated surface according to the invention is governed by thermodynamic laws. For example, when the self-assembly leads to a cylindrical type morphology having a symmetry of P6 / mm type, each cylinder is surrounded by six equidistant neighboring cylinders if there is no of defects. For a cylindrical morphology having a P4 / mm type symmetry, each cylinder is surrounded by four equidistant neighboring cylinders if there are no defects. There are several ways to quantify the presence of defects within the copolymer film. The first way is to count directly the number of topological defects within the film by evaluating the number of nearest neighbors around the considered domain.
- the Delaunay triangulation and / or the Voronoi construction then makes it possible to identify the number of first-order neighbors while the distribution function of the nearest neighbor distance of the domain centers makes it possible to quantify the mean difference between two more close neighbors. It is thus possible to quantify the number of defects.
- This counting method is described in the article by Tiron et al. (J. Vac Sci Technol B 29 (6), 1071-1023, 2011).
- the invention relates to a method for the spatial distribution of spatial luminous intensity of a promoter of spatial order and spatial coherence as a guide for nano - and micrometric - scale overcoating on the surface comprising the following steps: A: depositing a solution or dispersion of at least one (co) polymer containing at least one isomerizable function on a surface.
- C Irradiation of the surface thus treated according to a spatial distribution of light intensity and creation of patterns having a periodic relief or not.
- D Depositing a solution or a dispersion on the surface thus treated with at least one nano-object, consisting of an assembly of atoms, at least one of the three dimensions of which is less than half the length wave used for the irradiation of the surface.
- Nano-object means an assembly of atoms, at least one of the three dimensions is less than half the wavelength used for irradiation of the surface.
- This can be particles, which can be organic, inorganic or organic / inorganic hybrids.
- the inorganic particles may be magnetic particles such as iron platinum particles.
- the organic particles may be liquid crystal molecules, or molecules crystallizing by surface epitaxy, but also core-shell (co) -polymeric structures, polymeric or non-polymeric vesicles, and (co) -polymeric micelles.
- Nano-object also means (co) -polymers that can be organized such as liquid crystal (co) -polymers, the (co) -polymers can be organized by crystallizing periodically, the block copolymers can be self-organize.
- the nano-objects are block copolymers.
- dimension we mean the size corresponding to the step of the organization of the nano-object domains, when it is for example block copolymers.
- a precise definition of nano-objects is also given by ISO / TS 27687: 2008: 2008-08.
- the (co) -polymers containing isomerizable bonds, and where appropriate, crosslinkable functions used in the invention, can be of any type. They contain at least one isomerizable function under the effect of an external energy supply.
- step C may also contain at least one function that allows the copolymer to crosslink under the effect of a supply of energy.
- the isomerizable functions and the crosslinkable functions are pendent to the main chain.
- isomerizable function is meant a function whose configuration can switch from cis to trans or from trans to cis. This may, for example, be an azo function or a carbon-carbon double bond.
- the chromophoric entities containing these double bonds can be chosen from azobenzenes, amino stilbenes, pseudostilbenes and diaryl alkenes.
- isomerizable entities are preferentially stimulable with the aid of an appropriate monochromatic irradiation whose wavelength corresponds to the absorption bands of the chromophore.
- it is azobenzene entities.
- the (co) -polymers containing isomerizable and crosslinkable bonds used in the invention have molecular weights by weight of 500 to 1,000,000 g / mol with a preference of around 10,000 g / mol.
- cross-linkable function is meant a function present on the (co) -polymer, making it possible to create a bond between the (co) -polymer chains constituting the "guiding" surface.
- This function can be a carbon-carbon double bond or a function to create a linkage between chains such as a hydroxy, epoxy, amine, acid, anhydride, aldehyde, urea or isocyanate function.
- it is a carbon-carbon double bond such as acrylic, methacrylic, vinylic. More preferably it is a methacrylic function.
- the crosslinking can be improved in the presence of a multifunctional monomer, such as divinylbenzene, butanediol dimethacrylate, triallylcyanurate.
- the photoinitiator is tris ((2-acryloyloxy) ethyl isocyanurate).
- a photoinitiator absorbing in a wavelength range whose absorption spectrum is not superimposed on that of the chromophore used is used to trigger the crosslinking.
- the wavelength corresponding to the absorption maximum of the photoinitiator must not be superimposed with that of the chromophore.
- the synthesis of (co) -polymers containing isomerizable bonds and optionally crosslinkable functions can be done in any manner known to those skilled in the art.
- a typical example of a synthesis scheme is given in FIG.
- the (co) -polymers containing isomerizable bonds, and optionally crosslinkable functions, optionally containing in addition a multifunctional monomer, and optionally a photoinitiator are then dissolved in a suitable solvent. Then the solution is deposited on a surface.
- the surface may be of any type, but a surface that is useful for electronic applications such as silicon, oxidized or non-oxidized silica, silica having a surface treatment, such as one or more anti-reflective layers or high layers, is preferably chosen. reflectivities, carbon having a surface treatment or not, flexible films based on polymer, (co) -polymers, titanium nitride. Once deposited on the surface, the deposited solution is subjected to evaporation of the solvent.
- the surface is then structured according to a given topography by a light intensity distribution, typically monochromatic at a wavelength corresponding to the absorption bands of the chromophore.
- a light intensity distribution typically monochromatic at a wavelength corresponding to the absorption bands of the chromophore.
- the spatial distribution of light intensity is obtained:
- the resolution is limited to the half wavelength of the source creating the spatial distribution of light intensity.
- the surface thus treated is then subjected to a second irradiation at a wavelength permitting the crosslinking of the copolymer, which makes it possible to freeze the previously created patterns.
- the nano-objects are block copolymers
- they are of the di-block, tri-block, or multi-block type, of linear architecture, or in the form of combs, or in star, or in alterations, as well as their mixture. including the homopolymer of each of the blocks.
- it is diblock copolymers.
- these are triblock copolymers.
- the block copolymers may contain statistical or gradient sequences between the blocks themselves and consist of blocks containing at least two immiscible blocks between them.
- Block copolymers considered known, not exhaustive, to present this phenomenon are polystyrene-b-poly (methyl methacrylate) PS-b-PMMA, polystyrene-b-polybutadiene PS-b-PB, polystyrene-b-polyisoprene PS-b-PI, polystyrene-b-poly (ethylene oxide) PS-b-PEO, polystyrene-b-poly (dimethylsiloxane) PS-b-PDMS, polystyrene-b-poly (lactic acid) PS-b- PLA, polystyrene-b-poly (4-vinylpyridine) PS-b-P4VP, polystyrene-b-poly (2-vinylpyridine) PS-b-P2VP, polybutadiene-poly (methyl methacrylate) PB-b-PMMA, poly ( methyl methacrylate) -b- poly (butyl acrylate)
- these are PS-b-PMMA, PS-b-PEO, PDMS-b-PS, PLA-PDMS-b-PLA.
- the thickness of the block copolymer layer must be sufficient, typically such that the topographic relief created by the (co) polymer containing isomerizable functions is no longer visible by AFM (atomic force microscopy) microscopy, but without exceeding this optimum.
- An organization of the block copolymer is then obtained according to a precise topography and free of defects.
- the block copolymers may contain at least one degradable block. Degradable means the removal or chemical transformation of the block or blocks considered by treatment with an acidic or basic solution, or by plasma treatment.
- the method of the invention is used to make surfaces useful in applications for holographic optical components, for the bulk storage of data, for the production of surfaces or materials with photo-controlled deformation, for the creation of nanoporous structures or microporous for example for filtration membranes or for batteries, for the surface coating to obtain for example super-hydrophobic surfaces, marbled surfaces, antireflective surfaces, opalescent effect surfaces, for the creation of optical waveguides or Plasmonics on substrates, for the control of the transport properties of materials (electronic, acoustic, thermal, electromagnetic ...), for the development of nanoscale templates, or as a guide to the assembly of block copolymers on a surface used in particular as a lithography mask.
- the PI copolymer is obtained by radical polymerization.
- THF tetrahydrofuran
- 32.5 mg of hydroxyethyl methacrylate, 300 mg of N-ethyl-N- (2-methacrylate) are added.
- hydroxyethyl) -4- (4-nitrophenylazo) aniline (CAS No. 103553-48-6) (DR1M) and 2,2'-azobis- (2-methylpropionitrile) (AIBN), (7 mol% relative to the number of of moles of monomers).
- the solution is degassed with nitrogen for 5 minutes.
- the tube is then sealed and heated with constant stirring at 60 ° C for 48 hours.
- the copolymer is then isolated by precipitation with methanol, then filtered and dried under vacuum at 60 ° C for 24 hours.
- the copolymer P2 is obtained by esterification of the polymer PI with methacryloyl chloride.
- the reaction is carried out in the presence of N,, triethyl amine (TEA).
- TEA N, triethyl amine
- 200 mg of the polymer PI are introduced into a 50 ml flask supplemented with 15 ml of THF.
- the flask is cooled to 0 ° C in an ice bath, then 1 ml of TEA and 12.3 mg of methacryloyl chloride are introduced.
- the ice bath is removed and the reaction is continued at room temperature for 12 hours.
- the copolymer P2 is precipitated in pentane, filtered and then dried under vacuum at room temperature.
- a wavelength ⁇ of 532 nm corresponding to the absorption band of the azobenzene chromophore is chosen to induce the trans-cis transition.
- the steps of the photo-inscribed pattern ⁇ are adjusted by varying the angle of incidence ⁇ of the writing beam on the film (FIG. 2).
- the crosslinking of the copolymer layer P2 is obtained by insolation of the photo-inscribed pattern at a wavelength ⁇ f of 686 nm, non-resonant with the absorption of the chromophore azobenzene.
- Figure 2 (a) shows the evolution of A as a function of ⁇ .
- Figure 2 (b) is an AFM-3D (2.5 x 2.5 ⁇ m) image of a topographic view of the sinusoidal patterns obtained at different angles ⁇ . There are 7.6 and 5 peaks when the angle of incidence of the beam ⁇ is equal to 45 °, 51 ° and 57 °, respectively.
- Example 3
- Figure 3 shows a topographic AFM image (1.25 x 1.25 ⁇ m) of a self-organized thin film of PS- ⁇ PEO on a surface having a sinusoidal profile according to the method of the invention.
- the thin layer has regions devoid of topological defects over distances beyond the square micrometer as attested by Delaunay triangulation associated in Figure 4.
- Example 4 is characteristic of the result obtained during the self-organization of the same di-block copolymer on an untreated surface according to the method of the invention (FIG. 7 corresponds to an AFM image in phase mode of the characteristic self-organization of PS-b-PEO without the use of a prepared surface). There are many flaws.
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- Spectroscopy & Molecular Physics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Analytical Chemistry (AREA)
- Nanotechnology (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
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Abstract
Description
Claims
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1254685A FR2990885B1 (fr) | 2012-05-23 | 2012-05-23 | Procede de preparation de surfaces |
| US201261651080P | 2012-05-24 | 2012-05-24 | |
| PCT/FR2013/051119 WO2013175127A1 (fr) | 2012-05-23 | 2013-05-23 | Procede de preparation de surfaces |
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| Publication Number | Publication Date |
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| EP2852865A1 true EP2852865A1 (fr) | 2015-04-01 |
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| EP13728464.2A Withdrawn EP2852865A1 (fr) | 2012-05-23 | 2013-05-23 | Procede de preparation de surfaces |
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|---|---|
| US (1) | US20150140267A1 (fr) |
| EP (1) | EP2852865A1 (fr) |
| JP (1) | JP2015525467A (fr) |
| KR (1) | KR20150022877A (fr) |
| CN (1) | CN104508556A (fr) |
| FR (1) | FR2990885B1 (fr) |
| SG (1) | SG11201407725XA (fr) |
| WO (1) | WO2013175127A1 (fr) |
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| FR3069339B1 (fr) * | 2017-07-21 | 2021-05-14 | Arkema France | Procede de controle de l'orientation des nano-domaines d'un copolymere a blocs |
| CN108559084B (zh) * | 2018-04-13 | 2020-12-04 | 华东理工大学 | 一种聚乳酸基疏水薄膜的制备方法 |
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| JPH03253854A (ja) * | 1990-03-02 | 1991-11-12 | Brother Ind Ltd | 画像記録装置 |
| DE4244195A1 (de) * | 1992-12-24 | 1994-06-30 | Basf Ag | Verfahren zur Herstellung von strukturierten Polymerschichten mit nichtlinear optischen Eigenschaften |
| JP3625097B2 (ja) * | 1995-02-07 | 2005-03-02 | セイコーエプソン株式会社 | 着色コンタクトレンズおよびその製造法 |
| JP4144342B2 (ja) * | 2002-12-11 | 2008-09-03 | 日立化成工業株式会社 | 感光性樹脂組成物、感光性エレメント及び積層基材 |
| JP4232525B2 (ja) * | 2003-04-25 | 2009-03-04 | 株式会社豊田中央研究所 | 光応答性材料 |
| TW200624479A (en) * | 2004-12-09 | 2006-07-16 | Fraunhofer Ges Forschung | Film forming material and preparation of surface relief and optically anisotropic structures by irradiating a film of the said material |
| US7935212B2 (en) * | 2006-07-31 | 2011-05-03 | Essilor International Compagnie | Process for transferring onto a surface of an optical article a layer having a variable index of refraction |
| JP4673266B2 (ja) * | 2006-08-03 | 2011-04-20 | 日本電信電話株式会社 | パターン形成方法及びモールド |
| US7964107B2 (en) * | 2007-02-08 | 2011-06-21 | Micron Technology, Inc. | Methods using block copolymer self-assembly for sub-lithographic patterning |
| WO2009011371A1 (fr) * | 2007-07-19 | 2009-01-22 | Sumitomo Electric Industries, Ltd. | Elément conducteur, son procédé de fabrication et dispositif de stockage d'électricité électrolytique non-aqueux |
| US8003425B2 (en) * | 2008-05-14 | 2011-08-23 | International Business Machines Corporation | Methods for forming anti-reflection structures for CMOS image sensors |
| JP2010112500A (ja) * | 2008-11-07 | 2010-05-20 | Nsk Ltd | 転がり支持装置用シール |
| KR101462656B1 (ko) * | 2008-12-16 | 2014-11-17 | 삼성전자 주식회사 | 나노입자/블록공중합체 복합체의 제조방법 |
| JP5557028B2 (ja) * | 2010-09-09 | 2014-07-23 | Dic株式会社 | 光学異方体 |
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2013
- 2013-05-23 EP EP13728464.2A patent/EP2852865A1/fr not_active Withdrawn
- 2013-05-23 KR KR20147035951A patent/KR20150022877A/ko not_active Ceased
- 2013-05-23 WO PCT/FR2013/051119 patent/WO2013175127A1/fr not_active Ceased
- 2013-05-23 US US14/402,957 patent/US20150140267A1/en not_active Abandoned
- 2013-05-23 CN CN201380033250.9A patent/CN104508556A/zh active Pending
- 2013-05-23 JP JP2015513246A patent/JP2015525467A/ja active Pending
- 2013-05-23 SG SG11201407725XA patent/SG11201407725XA/en unknown
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| See also references of WO2013175127A1 * |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2990885B1 (fr) | 2014-09-19 |
| FR2990885A1 (fr) | 2013-11-29 |
| JP2015525467A (ja) | 2015-09-03 |
| SG11201407725XA (en) | 2014-12-30 |
| WO2013175127A1 (fr) | 2013-11-28 |
| US20150140267A1 (en) | 2015-05-21 |
| CN104508556A (zh) | 2015-04-08 |
| KR20150022877A (ko) | 2015-03-04 |
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