EP2836456B1 - Verfahren zur herstellung von grabenartigen vertiefungen in der oberfläche eines wafers - Google Patents

Verfahren zur herstellung von grabenartigen vertiefungen in der oberfläche eines wafers Download PDF

Info

Publication number
EP2836456B1
EP2836456B1 EP13715953.9A EP13715953A EP2836456B1 EP 2836456 B1 EP2836456 B1 EP 2836456B1 EP 13715953 A EP13715953 A EP 13715953A EP 2836456 B1 EP2836456 B1 EP 2836456B1
Authority
EP
European Patent Office
Prior art keywords
depressions
wafer
layer
protective layer
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
EP13715953.9A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP2836456A1 (de
Inventor
Klaus Kadel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Boehringer Ingelheim Microparts GmbH
Original Assignee
Boehringer Ingelheim Microparts GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Boehringer Ingelheim Microparts GmbH filed Critical Boehringer Ingelheim Microparts GmbH
Priority to EP13715953.9A priority Critical patent/EP2836456B1/de
Publication of EP2836456A1 publication Critical patent/EP2836456A1/de
Application granted granted Critical
Publication of EP2836456B1 publication Critical patent/EP2836456B1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61M—DEVICES FOR INTRODUCING MEDIA INTO, OR ONTO, THE BODY; DEVICES FOR TRANSDUCING BODY MEDIA OR FOR TAKING MEDIA FROM THE BODY; DEVICES FOR PRODUCING OR ENDING SLEEP OR STUPOR
    • A61M11/00—Sprayers or atomisers specially adapted for therapeutic purposes
    • A61M11/02—Sprayers or atomisers specially adapted for therapeutic purposes operated by air or other gas pressure applied to the liquid or other product to be sprayed or atomised
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00206—Processes for functionalising a surface, e.g. provide the surface with specific mechanical, chemical or biological properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0111—Bulk micromachining
    • B81C2201/0112—Bosch process
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/0176—Chemical vapour Deposition
    • B81C2201/018—Plasma polymerization, i.e. monomer or polymer deposition

Definitions

  • the invention relates to a method for producing trench-like depressions in the surface of a wafer, in particular a silicon wafer or a glass wafer, by means of plasma etching, in which the depressions are produced by alternate passivation and etching.
  • micro-nozzles for the delivery of a fluid
  • a composite of a silicon wafer and a glass plate applied thereto In this case, microporous structures or channels, which then form nozzle channels in cooperation with the glass plate, are etched into the wafer surface.
  • microporous structures or channels can be etched into a surface of a glass plate or a glass wafer, which form nozzle channels in cooperation with a silicon wafer or another glass plate.
  • the micro-nozzle may comprise two or more plates, at least one first plate of which has a trench-like structure, the trenches connecting the inlet side and the atomizer nozzle (s) provided on the opposite side as an outlet, while another, generally unstructured second plate is placed on the structured side of the first plate and firmly connected to it.
  • a nozzle body of three layers may for example consist of a structured silicon plate, a planar silicon cover plate and a thin glass plate arranged therebetween.
  • a thin layer of silicon is thermally oxidized on the surface to be structured.
  • the oxide layer later serves as a mask for etching the trench structures.
  • a light-sensitive plastic layer is applied by spin coating and solidified.
  • the structures are transferred and developed in a light-optical manner by means of a contact copy over a mask on a scale of 1: 1 into this plastic layer.
  • the structures may be transferred and developed into the plastic layer by projection lithography using masks preferably having 5X magnification.
  • the plastic structures serve as masking for the structuring of the silicon dioxide layer. This structuring is carried out by reactive etching with ion beams.
  • the oxide layer of the plastic When structuring the oxide layer of the plastic is completely removed or in the Following the oxide patterning or silicon patterning removed.
  • the oxide layer thus structured is now used as a mask for the etching of z. B. 5-7 micron deep trench structures in the silicon.
  • the oxide layer is also removed slowly.
  • U-shaped or rectangular box-shaped trench structures on the silicon plate At the end of this structuring process, there are U-shaped or rectangular box-shaped trench structures on the silicon plate, which, however, can have almost any surface geometries in plan view. These etches can be produced by isotropic dry etching as well as by isotropic wet etching.
  • triangular nozzle cross-sections of V-shaped trench structures or trench structures with vertical edges of monocrystalline base plates can be achieved.
  • the geometry of the trenches may also be altered via a combination of etching techniques and coating techniques. Here arise almost any geometry shapes. After structuring, the silicon plate is cleaned and the remaining silicon dioxide is removed by wet chemistry.
  • microjets are used, for example, in medical inhalers whose technical bases, for example, in the WO 91/14468 or the WO 97/12687 are described.
  • the amount of the liquid pharmaceutical formulation to be nebulised is pressed by means of a high pressure of up to 500 bar through a micro nozzle with preferably two nozzle outlets and thereby transferred into the respirable aerosol.
  • each recess is provided in its final geometry with a polytetrafluoroethylene-like protective layer.
  • polytetrafluoroethylene-like is understood to mean CFx or CxFy polymers which are usually used as so-called plasma polymers in the course of a deep etching.
  • the protective layer is chemically very inert and has a very low coefficient of friction at a low surface tension. Accordingly, remain in the wells no residues of substances that are passed through and the micro nozzle is virtually self-cleaning.
  • the protective layer is formed from the plasma polymer used for the passivation and influenced by an adaptation of the applied potential in its thickness.
  • so-called Bosch process is a deep etching of silicon in different subprocesses, each characterized by etching and passivation.
  • the polymer layer is removed again and this is followed by the etching of the next step.
  • etching and final removal of the polymer generally take place
  • the plasma polymer is deposited in a final step after reaching the required depth.
  • the applied potential is changed compared to the preceding passivation steps, with appropriate measures being familiar to the person skilled in the art.
  • the procedure described is also feasible in a combined Bosch Cyro process, in which the wafer is cooled during the etching.
  • the protective layer is deposited before the stripping of a masking layer, in particular on the surface of the depressions. By stripping, ie removing the masking layer from the surface, the protective layer adhering to the masking layer is also removed.
  • the masking layer can in particular Photoresist, SiO2, Si3N4 or metal.
  • the gas used for the protective layer is trifluoromethane (CHF3), tetrafluoroethylene (C2F4), octafluorocyclobutane (C4F8), or a mixture of these gases with an inert gas.
  • CHF3 trifluoromethane
  • C2F4 tetrafluoroethylene
  • C4F8 octafluorocyclobutane
  • the surface of the wafer having the depressions after stripping a masking layer, in particular an oxide layer, is connected to a glass plate by anodic bonding.
  • a suitable glass is, for example, a Alkaliborosilikatglas z. B. under the trade names Pyrex (# 7740 Corning) or Tempax (Schott) is available on the market.
  • Pyrex # 7740 Corning
  • Tempax Schott
  • the protective layer Through the protective layer, an interaction of constituents and particles of the formulation discharged through a nozzle opening of the micro-nozzle with the interfaces of the depressions of the micro-nozzle is prevented.
  • the free energy of the surface of the areawise nozzle and nozzle channels forming depressions and thus the wettability is minimized in this area, which is accompanied by a reduction of the immobilization of material residues at the nozzle outlet, ie directly in the region of the nozzle opening.
  • the material residues are discharged and the depressions provided with the protective layer are virtually self-cleaning.
  • the nebulizer 1 for atomizing a fluid 2, in particular a highly effective drug or the like, is presently designed as a portable inhaler and preferably operates without propellant gas.
  • a liquid in particular an ethanolic or aqueous drug formulation
  • a respirable aerosol is formed, which can be inhaled or inhaled by a user or patient.
  • a container 3 which is essentially cylindrical in cross-section with the fluid 2, in particular interchangeable, is used, which forms a reservoir for the fluid 2 to be atomized, which is accommodated in a collapsible bag 4 in the container 3.
  • the nebulizer 1 has a pressure generator 5 for conveying and atomizing the fluid 2 in each case in a predetermined, optionally adjustable dosing quantity.
  • the pressure generator 5 comprises a holder 6 for the container 3, a drive spring 7, a manually operable to unlock locking element 8, preferably designed as a capillary conveyor tube 9 with a check valve 10 and at least one micro nozzle comprehensive outlet 12 in the region of a mouthpiece 13th Der Container 3 is fixed on the holder 6, so in the metering device 1, that the delivery pipe 9 is immersed in the container 3.
  • the holder 6 During axial clamping of the drive spring 7, the holder 6 is moved with the container 3 and the delivery pipe 9 down and sucked fluid 2 from the container 3 via the check valve 10 into a pressure chamber 11 of the pressure generator 5.
  • the fluid 2 is pressurized in the pressure chamber 11 by the conveyor tube 9 is moved back in the now closed check valve 10 by relaxing the drive spring 7 and now acts as a pressure piston.
  • This pressure drives the fluid 2 through the micro-nozzles of the outlet nozzle 12, where it is atomized into the preferably respirable aerosol.
  • the user inhales the aerosol, wherein he sucks 15 supply air into the mouthpiece 13 via at least one supply air opening.
  • the metering device 1 has an upper housing part 16 and a counter-rotating inner housing part 17 with an upper part 17a and a lower part 17b, wherein on the inner housing part 17, a lower housing part 18 is releasably secured by means of a manually operable retaining element 19. For inserting or replacing the container 3, the cap-like housing lower part 18 is released from the atomizer 1.
  • the lower housing part 18 can be rotated relative to the upper housing part 16, wherein it entrains the lower part 17 b of the inner housing part 17.
  • Characterized the drive spring 7 is tensioned via an unillustrated, acting on the holder 6 gear in the axial direction. With the clamping of the container 3 is axially after moves down until the container 3 assumes its end position in which the drive spring 7 is tensioned.
  • a spindle counter 23 is actuated.
  • the micro-nozzle essentially comprises a silicon plate 25 having trench-like recesses 24 in a surface and a glass plate 26 covering the recesses 24 to form a channel system, which is connected to the silicon plate 25 by anodic bonding.
  • the depressions 24 are introduced into the surface of a wafer 27 made of silicon by deep etching in various partial processes, wherein first a masking layer 28 is applied in order to determine the course of the depressions 26.
  • first a masking layer 28 is applied in order to determine the course of the depressions 26.
  • a first step according to Fig. 3 the deposition of a thin plasma polymer layer 29 with a thickness of a few nm after Fig. 4 in a second step on the surfaces is removed.
  • a third step takes place accordingly Fig. 5 an isotropic etching
  • a fourth step after Fig. 6 a further deposition of a plasma polymer layer 29 for passivation of the isotropically etched areas follows.
  • the steps are repeated until the recess 24 has the desired depth.
  • the plasma polymer is deposited to achieve a relatively thick protective layer 30, which far exceeds the thickness of the plasma polymer layer 29 for passivation.
  • the gas used to form the protective layer 30 is trifluoromethane (CHF3), tetrafluoroethylene (C2F4) or octafluorocyclobutane (C4F8).

Landscapes

  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Molecular Biology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Animal Behavior & Ethology (AREA)
  • Biomedical Technology (AREA)
  • Public Health (AREA)
  • Veterinary Medicine (AREA)
  • Heart & Thoracic Surgery (AREA)
  • Anesthesiology (AREA)
  • Hematology (AREA)
  • Micromachines (AREA)
  • Drying Of Semiconductors (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
EP13715953.9A 2012-04-10 2013-04-08 Verfahren zur herstellung von grabenartigen vertiefungen in der oberfläche eines wafers Active EP2836456B1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP13715953.9A EP2836456B1 (de) 2012-04-10 2013-04-08 Verfahren zur herstellung von grabenartigen vertiefungen in der oberfläche eines wafers

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP12163650 2012-04-10
PCT/EP2013/057301 WO2013153028A1 (de) 2012-04-10 2013-04-08 Verfahren zur herstellung von grabenartigen vertiefungen in der oberfläche eines wafers
EP13715953.9A EP2836456B1 (de) 2012-04-10 2013-04-08 Verfahren zur herstellung von grabenartigen vertiefungen in der oberfläche eines wafers

Publications (2)

Publication Number Publication Date
EP2836456A1 EP2836456A1 (de) 2015-02-18
EP2836456B1 true EP2836456B1 (de) 2016-08-24

Family

ID=48092943

Family Applications (1)

Application Number Title Priority Date Filing Date
EP13715953.9A Active EP2836456B1 (de) 2012-04-10 2013-04-08 Verfahren zur herstellung von grabenartigen vertiefungen in der oberfläche eines wafers

Country Status (3)

Country Link
US (1) US9220852B2 (es)
EP (1) EP2836456B1 (es)
WO (1) WO2013153028A1 (es)

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1138401A (en) 1965-05-06 1969-01-01 Mallory & Co Inc P R Bonding
US4007464A (en) * 1975-01-23 1977-02-08 International Business Machines Corporation Ink jet nozzle
US4392362A (en) * 1979-03-23 1983-07-12 The Board Of Trustees Of The Leland Stanford Junior University Micro miniature refrigerators
US4343013A (en) * 1980-10-14 1982-08-03 Ncr Corporation Nozzle plate for ink jet print head
US4658269A (en) * 1986-06-02 1987-04-14 Xerox Corporation Ink jet printer with integral electrohydrodynamic electrodes and nozzle plate
SG45171A1 (en) 1990-03-21 1998-01-16 Boehringer Ingelheim Int Atomising devices and methods
DE4236037A1 (de) 1992-10-24 1994-04-28 Boehringer Ingelheim Int Düsenkörper für Zerstäuber und ihre Herstellung
JP3169032B2 (ja) * 1993-02-25 2001-05-21 セイコーエプソン株式会社 ノズルプレートとその表面処理方法
JP3169037B2 (ja) * 1993-10-29 2001-05-21 セイコーエプソン株式会社 インクジェット記録ヘッドのノズルプレートの製造方法
DE19536902A1 (de) 1995-10-04 1997-04-10 Boehringer Ingelheim Int Vorrichtung zur Hochdruckerzeugung in einem Fluid in Miniaturausführung
DE19736370C2 (de) 1997-08-21 2001-12-06 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silizium
JP4385675B2 (ja) * 2003-07-31 2009-12-16 セイコーエプソン株式会社 インクジェットヘッドの製造方法
US20050183718A1 (en) * 2004-02-24 2005-08-25 Boehringer Ingelheim International Gmbh Nebulizer
DE102005012415B4 (de) 2005-03-17 2006-12-28 Syntics Gmbh Verfahrenstechnisches Funktionselement aus einem Folienstapel
JP4936880B2 (ja) * 2006-12-26 2012-05-23 株式会社東芝 ノズルプレート、ノズルプレートの製造方法、液滴吐出ヘッド及び液滴吐出装置
JP4674619B2 (ja) * 2008-07-29 2011-04-20 セイコーエプソン株式会社 ノズルプレート、ノズルプレートの製造方法、液滴吐出ヘッドおよび液滴吐出装置
US8292404B2 (en) * 2009-12-28 2012-10-23 Xerox Corporation Superoleophobic and superhydrophobic surfaces and method for preparing same

Also Published As

Publication number Publication date
EP2836456A1 (de) 2015-02-18
WO2013153028A1 (de) 2013-10-17
US9220852B2 (en) 2015-12-29
US20130263847A1 (en) 2013-10-10

Similar Documents

Publication Publication Date Title
DE602004003249T2 (de) Verfahren zur herstellung von mikrofluidanordnungen aus einer plattenförmigen verbundstruktur
EP1641569B1 (de) Mikrostrukturierte hochdruckdüse mit eingebauter filterfunktion
DE60027714T3 (de) Zerstäubungssystem mit niedriger spraykraft und retention
DE69834210T2 (de) Sprühvorrichtung für einen Inhalator
EP2414560B1 (de) Verfahren zur beschichtung einer oberfläche eines bauteils
EP2593164B1 (de) Filtersystem für den einsatz in medizinischen geräten
DE69333938T2 (de) Düse zur Verwendung in einer Sprühvorrichtung
DE69629708T2 (de) Miniaturisierte vorrichtung zur herstellung hohen druckes in zu versprühenden fluiden
DE69415549T2 (de) Mikromaschinen-flüssigkeitsfluss-regulator
EP1706210B1 (de) Vorrichtung zum haltern eines fluidischen bauteils
DE68914405T4 (de) Strömungskontrolle.
WO2004089551A2 (de) Düsensystem für eine ausbringungsvorrichtung für flüssigkeiten bestehend aus düse und düsenhalter und/oder überwurfmutter
US20120012105A1 (en) Atomising body, atomising device, inhaler, manufacturing method of manufacturing an atomising body and assembly method for assembling an atomising device
EP1493492A1 (de) Mikrostrukturierte Hochdruckdüse mit eingebauter Filterfunktion
CH694453A5 (de) Mikromechanisch hergestellte Düse zur Erzeugung reproduzierbarer Tröpfchen.
EP3691722A1 (de) Düsenkörper und sprühvorrichtung
EP1651867B1 (de) Verfahren zur herstellung eines mikromechanischen bauteils, vorzugsweise für fluidische anwendungen und mikropumpe mit einer pumpmemembran aus einer polysiliciumschicht
DE102004050679A1 (de) Dosiervorrichtung
EP2232070B1 (de) Mikropumpe
EP3097981A1 (de) Sprühkopf für eine sprühdose, verfahren zu dessen herstellung und zerstäubungsverfahren
EP2836456B1 (de) Verfahren zur herstellung von grabenartigen vertiefungen in der oberfläche eines wafers
EP3202709B1 (de) Abformwerkzeug mit magnethalterung
EP1200198B1 (de) Aktorbauglied für einen mikrozerstäuber und verfahren zu seiner herstellung
DE102005050782A1 (de) Mikrodüsenplatte und Herstellungsverfahren
DE10302518B4 (de) Verfahren zur bereichsweisen Erzeugung einer Mikrostruktur auf einem Grundkörper

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20141110

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

AX Request for extension of the european patent

Extension state: BA ME

DAX Request for extension of the european patent (deleted)
17Q First examination report despatched

Effective date: 20151005

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

RIC1 Information provided on ipc code assigned before grant

Ipc: A61M 11/02 20060101ALI20160212BHEP

Ipc: B81C 1/00 20060101AFI20160212BHEP

INTG Intention to grant announced

Effective date: 20160318

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

REG Reference to a national code

Ref country code: GB

Ref legal event code: FG4D

Free format text: NOT ENGLISH

REG Reference to a national code

Ref country code: CH

Ref legal event code: EP

REG Reference to a national code

Ref country code: AT

Ref legal event code: REF

Ref document number: 822890

Country of ref document: AT

Kind code of ref document: T

Effective date: 20160915

REG Reference to a national code

Ref country code: IE

Ref legal event code: FG4D

Free format text: LANGUAGE OF EP DOCUMENT: GERMAN

REG Reference to a national code

Ref country code: DE

Ref legal event code: R096

Ref document number: 502013004169

Country of ref document: DE

REG Reference to a national code

Ref country code: LT

Ref legal event code: MG4D

REG Reference to a national code

Ref country code: NL

Ref legal event code: MP

Effective date: 20160824

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: NO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20161124

Ref country code: NL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160824

Ref country code: RS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160824

Ref country code: FI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160824

Ref country code: HR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160824

Ref country code: LT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160824

Ref country code: IT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160824

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: ES

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160824

Ref country code: LV

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160824

Ref country code: SE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160824

Ref country code: PT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20161226

Ref country code: GR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20161125

REG Reference to a national code

Ref country code: FR

Ref legal event code: PLFP

Year of fee payment: 5

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: EE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160824

Ref country code: RO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160824

REG Reference to a national code

Ref country code: DE

Ref legal event code: R097

Ref document number: 502013004169

Country of ref document: DE

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: BG

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20161124

Ref country code: CZ

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160824

Ref country code: SK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160824

Ref country code: SM

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160824

Ref country code: DK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160824

Ref country code: PL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160824

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed

Effective date: 20170526

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160824

REG Reference to a national code

Ref country code: CH

Ref legal event code: PL

REG Reference to a national code

Ref country code: IE

Ref legal event code: MM4A

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MC

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160824

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LI

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20170430

Ref country code: CH

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20170430

Ref country code: LU

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20170408

REG Reference to a national code

Ref country code: BE

Ref legal event code: MM

Effective date: 20170430

REG Reference to a national code

Ref country code: FR

Ref legal event code: PLFP

Year of fee payment: 6

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20170408

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: BE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20170430

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160824

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: AL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160824

REG Reference to a national code

Ref country code: AT

Ref legal event code: MM01

Ref document number: 822890

Country of ref document: AT

Kind code of ref document: T

Effective date: 20180408

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: HU

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT; INVALID AB INITIO

Effective date: 20130408

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: AT

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20180408

Ref country code: CY

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160824

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160824

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: TR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160824

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20161224

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 20240419

Year of fee payment: 12

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20240418

Year of fee payment: 12

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: FR

Payment date: 20240425

Year of fee payment: 12