EP2715797A4 - Implantation d'ion et recuit pour des cellules solaires à rendement élevé à jonction arrière et contact arrière - Google Patents

Implantation d'ion et recuit pour des cellules solaires à rendement élevé à jonction arrière et contact arrière

Info

Publication number
EP2715797A4
EP2715797A4 EP12793962.7A EP12793962A EP2715797A4 EP 2715797 A4 EP2715797 A4 EP 2715797A4 EP 12793962 A EP12793962 A EP 12793962A EP 2715797 A4 EP2715797 A4 EP 2715797A4
Authority
EP
European Patent Office
Prior art keywords
annealing
high efficiency
ion implantation
solar cells
junction solar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP12793962.7A
Other languages
German (de)
English (en)
Other versions
EP2715797A2 (fr
Inventor
Mehrdad M Moslehi
Virendra V Rana
Pawan Kapur
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beamreach Solexel Assets Inc
Original Assignee
Solexel Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solexel Inc filed Critical Solexel Inc
Publication of EP2715797A2 publication Critical patent/EP2715797A2/fr
Publication of EP2715797A4 publication Critical patent/EP2715797A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1864—Annealing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
EP12793962.7A 2011-05-27 2012-05-29 Implantation d'ion et recuit pour des cellules solaires à rendement élevé à jonction arrière et contact arrière Withdrawn EP2715797A4 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161490859P 2011-05-27 2011-05-27
PCT/US2012/039901 WO2012166749A2 (fr) 2011-05-27 2012-05-29 Implantation d'ion et recuit pour des cellules solaires à rendement élevé à jonction arrière et contact arrière

Publications (2)

Publication Number Publication Date
EP2715797A2 EP2715797A2 (fr) 2014-04-09
EP2715797A4 true EP2715797A4 (fr) 2015-05-27

Family

ID=47260262

Family Applications (1)

Application Number Title Priority Date Filing Date
EP12793962.7A Withdrawn EP2715797A4 (fr) 2011-05-27 2012-05-29 Implantation d'ion et recuit pour des cellules solaires à rendement élevé à jonction arrière et contact arrière

Country Status (3)

Country Link
EP (1) EP2715797A4 (fr)
KR (1) KR101396027B1 (fr)
WO (1) WO2012166749A2 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9318644B2 (en) 2009-05-05 2016-04-19 Solexel, Inc. Ion implantation and annealing for thin film crystalline solar cells
KR101925934B1 (ko) 2012-09-06 2018-12-06 삼성에스디아이 주식회사 배터리 팩
GB2521457A (en) * 2013-12-20 2015-06-24 Isis Innovation Charge stabilized dielectric film for electronic devices
CN113871494B (zh) * 2020-06-30 2024-03-15 泰州隆基乐叶光伏科技有限公司 一种太阳能电池及其制作方法
CN117374169B (zh) * 2023-12-07 2024-03-12 浙江晶科能源有限公司 背接触太阳能电池的制备方法及背接触太阳能电池

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090227094A1 (en) * 2008-03-05 2009-09-10 Nicholas Bateman Use of chained implants in solar cells
US20090308439A1 (en) * 2008-06-11 2009-12-17 Solar Implant Technologies Inc. Solar cell fabrication using implantation
US20100052088A1 (en) * 2008-09-03 2010-03-04 Sionyx, Inc. High sensitivity photodetectors, imaging arrays, and high efficiency photovoltaic devices produced using ion implantation and femtosecond laser irradiation
US20100124619A1 (en) * 2008-11-14 2010-05-20 Palo Alto Research Center Incorporated Solar cell metallization using inline electroless plating
US20100300518A1 (en) * 2009-05-29 2010-12-02 Solexel, Inc. Three-dimensional thin-film semiconductor substrate with through-holes and methods of manufacturing
US20100304522A1 (en) * 2009-05-05 2010-12-02 Solexel, Inc. Ion implantation fabrication process for thin-film crystalline silicon solar cells
KR20100128153A (ko) * 2009-05-27 2010-12-07 (주)미래컴퍼니 레이저 식각장치 및 이를 이용한 공극 형성 방법

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7857907B2 (en) * 2007-01-25 2010-12-28 Au Optronics Corporation Methods of forming silicon nanocrystals by laser annealing
MY159267A (en) * 2009-03-24 2016-12-30 Solexel Inc Method for fabricating a three-dimensional thin-film semiconductor substrate from a template

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090227094A1 (en) * 2008-03-05 2009-09-10 Nicholas Bateman Use of chained implants in solar cells
US20090308439A1 (en) * 2008-06-11 2009-12-17 Solar Implant Technologies Inc. Solar cell fabrication using implantation
US20100052088A1 (en) * 2008-09-03 2010-03-04 Sionyx, Inc. High sensitivity photodetectors, imaging arrays, and high efficiency photovoltaic devices produced using ion implantation and femtosecond laser irradiation
US20100124619A1 (en) * 2008-11-14 2010-05-20 Palo Alto Research Center Incorporated Solar cell metallization using inline electroless plating
US20100304522A1 (en) * 2009-05-05 2010-12-02 Solexel, Inc. Ion implantation fabrication process for thin-film crystalline silicon solar cells
KR20100128153A (ko) * 2009-05-27 2010-12-07 (주)미래컴퍼니 레이저 식각장치 및 이를 이용한 공극 형성 방법
US20100300518A1 (en) * 2009-05-29 2010-12-02 Solexel, Inc. Three-dimensional thin-film semiconductor substrate with through-holes and methods of manufacturing

Also Published As

Publication number Publication date
KR20140041602A (ko) 2014-04-04
EP2715797A2 (fr) 2014-04-09
WO2012166749A2 (fr) 2012-12-06
KR101396027B1 (ko) 2014-05-19
WO2012166749A3 (fr) 2013-03-28

Similar Documents

Publication Publication Date Title
EP2715802A4 (fr) Cellule solaire à jonction tunnel à grille de cuivre pour application photovoltaïque concentrée
EP2780952A4 (fr) Cellules photovoltaïques intelligentes et modules associés
EP2689308A4 (fr) Génération et analyse automatiques de courbes de courant et de tension (iv) de cellule solaire
EP2732527A4 (fr) Systèmes et procédés de captage et de conversion d'énergie solaire photovoltaïque
GB2486509B (en) Solar photovoltaic power conditioning units
EP2795680A4 (fr) Support pour collecteurs d'énergie solaire
IL233193A0 (en) System and method for utilizing solar energy
HK1219805A1 (zh) 用於聚光光伏的包含堆叠的太陽能電池的高效率太陽能接收器
EP2717325A4 (fr) Cellule solaire et son procédé de fabrication
HK1201375A1 (en) Method for manufacturing dye-sensitized solar cells and solar cells so produced
EP2659518A4 (fr) Procédés de traitement au laser pour cellules solaires photovoltaïques
IL227595A0 (en) Systems and methods for harvesting photovoltaic energy using micro-inverters in shade conditions
EP2688111A4 (fr) Feuille de support écologique pour cellule solaire et son procédé de fabrication
EP2747152A4 (fr) Cellule solaire et procédé de fabrication de ladite cellule
GB2495166B (en) Single-junction photovoltaic cell
EP2660874A4 (fr) Cellule solaire composite à multiples jonctions, batterie solaire composite à multiples jonctions et procédé de fabrication de celles-ci
EP2717330A4 (fr) Interconnecteur pour cellules solaires, et module de cellules solaires
EP2693491A4 (fr) Feuille de protection pour cellules solaires, son procédé de fabrication, et module de cellules solaires
GB201419706D0 (en) High efficiency solar cells fabricated by in expensive pecvd
EP2763186A4 (fr) Cellule solaire et procédé de fabrication de cette dernière
EP2715797A4 (fr) Implantation d'ion et recuit pour des cellules solaires à rendement élevé à jonction arrière et contact arrière
EP2695200A4 (fr) Cellule solaire et son procédé de fabrication
EP2745058A4 (fr) Collecteur de chaleur solaire non orthogonal et cogénération d'énergie solaire
EP2717327A4 (fr) Cellule solaire, et procédé de fabrication associé
GB2491494B (en) Solar photovoltaic power conditioning units

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20131212

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DAX Request for extension of the european patent (deleted)
RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 31/18 20060101AFI20141222BHEP

A4 Supplementary search report drawn up and despatched

Effective date: 20150429

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 31/18 20060101AFI20150422BHEP

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20151201