EP2695015A1 - Dispositif d'éclairage pour l'éclairage structuré d'une surface - Google Patents

Dispositif d'éclairage pour l'éclairage structuré d'une surface

Info

Publication number
EP2695015A1
EP2695015A1 EP12722065.5A EP12722065A EP2695015A1 EP 2695015 A1 EP2695015 A1 EP 2695015A1 EP 12722065 A EP12722065 A EP 12722065A EP 2695015 A1 EP2695015 A1 EP 2695015A1
Authority
EP
European Patent Office
Prior art keywords
exposure
optical
exposure device
arrangement
partial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP12722065.5A
Other languages
German (de)
English (en)
Inventor
. Jan WERSCHNIK
Markus AUGUSTIN
Lutz Reichmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jenoptik Optical Systems GmbH
Original Assignee
Jenoptik Optical Systems GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jenoptik Optical Systems GmbH filed Critical Jenoptik Optical Systems GmbH
Publication of EP2695015A1 publication Critical patent/EP2695015A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70208—Multiple illumination paths, e.g. radiation distribution devices, microlens illumination systems, multiplexers or demultiplexers for single or multiple projection systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
    • G02B26/0841—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD the reflecting element being moved or deformed by electrostatic means
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0037—Arrays characterized by the distribution or form of lenses
    • G02B3/0056—Arrays characterized by the distribution or form of lenses arranged along two different directions in a plane, e.g. honeycomb arrangement of lenses
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/7005—Production of exposure light, i.e. light sources by multiple sources, e.g. light-emitting diodes [LED] or light source arrays
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Definitions

  • the invention relates to an exposure device with at least one exposure arrangement for the structured exposure of a surface, for. B. the surface of a wafer, as it is known generically from US 6,876,494 B2.
  • a wafer is patterned, that is to say exposed to a predetermined pattern of structure (exposure structure), in which a mask is projected onto or brought into contact with a wafer.
  • exposure structure structure
  • the disadvantage here is the production cost for the production of the masks, which is particularly significant in the flat-panel production due to the required size and the limited use of each only for exposure to a single exposure structure.
  • US Pat. No. 6,876,494 B2 discloses an exposure arrangement with which light in a predefined exposure structure (structure pattern) is projected onto a wafer by spatially modulating the light via a micromirror array.
  • DMD Digital Micro Mirror Device
  • MLA microlens array
  • US Pat. No. 6,876,494 B2 has the object of increasing the quality of the image with two different measures.
  • an exposure arrangement is to be created in which a magnifying imaging system is created by combining optically imaging systems with a microlens array, wherein a deterioration of the absorption ratio caused by distortion should be avoided.
  • an apparatus is to be created in which a microlens array is combined with a pinhole array and the relative distance between the microlens array and the pinhole array in the direction of the optical axis can be set precisely.
  • the first object is achieved by the first and the second optical imaging system are designed as image-enlarging systems and the desired magnification results as a product of the enlargement of both systems. It is therefore possible to make the two individual imaging systems small, thus avoiding deterioration of the distortion characteristic and achieving a satisfactory absorption ratio.
  • the second object is achieved in that at least one projection to the other array is formed on the microlens array or on the pinhole array, which has a predetermined height in the direction of the optical axis and is decisive for the spacing of the arrays.
  • the relative position of the arrays relative to one another in the direction of the optical axis can be precisely adjusted so that the pinhole apertures are located in the focal planes of the microlenses.
  • the at least one projection may be inserted between the microlens array and the pinhole array also a spacer with a predetermined thickness.
  • the throughput speed is the speed with which a surface to be exposed is completely exposed. This speed is determined by which minimum time interval the exposure can take place and how large the respectively simultaneously exposed partial area, in relation to the total area to be exposed, is.
  • This ratio can be improved if, instead of only one exposure arrangement, a plurality of exposure arrangements each exposing a partial area of the entire area to be exposed with an exposure structure and together forming an exposure device, eg. B. side by side in a row or in several staggered rows are arranged.
  • the minimum time interval between the exposures is limited by the charging time of a pattern in the memory cells of the DMD (a memory cell is assigned to each micromirror). This results from the number of clocks for processing the command, the clock frequency, which is currently at 400 MHz and the number of simultaneously to be loaded memory cells (so-called blocks).
  • the modulation rate is the number of possible modulations of a DMD, or the mirror elements of the DMD which participate in the formation of the structure pattern for the exposure, per unit of time.
  • the DMD When already implemented exposure arrangement, the DMD is illuminated with a given area. If you only use the x-th part of the DMD area, the (1-x) th part of the illuminated area will remain unused (loss of efficiency).
  • the invention is based on the object to provide an exposure device with at least one exposure arrangement, with a comparatively higher throughput speed can be achieved.
  • the exposure device should be compact and accessible to every single exposure arrangement.
  • an exposure device for the structured exposure of a wafer with at least one exposure arrangement in succession along an optical axis a surface emitter emitting a beam, optical elements for imaging the beam onto a downstream micromirror array for structuring the beam, a first optical imaging System, a microlens array corresponding to the micromirror array, and a second optical imaging system for imaging the structured beam in an image field of the exposure arrangement, which covers a part of a wafer to be illuminated, achieved in that the micromirror array is a first micromirror array in front of which a first beam splitter is present , the beam in a first and a second Partial beam along a first and a second optical axis separates and arranged in the direction of the second partial beam, a second micromirror array in front of the first optical imaging system, a second beam splitter is present, via which the two partial beams, which have a same optical path between the two beam splitters , to be recombined into a bundle
  • the modulation frequency is basically limited by the minimum necessary time interval, given by the technically required charging time of a structure pattern in the memory cells of the DMD.
  • the exposure arrangements are advantageously combined in number and arrangement into an exposure device in such a way that the entire surface to be exposed with a predetermined width and a predetermined length is scanned once in the longitudinal direction (scan direction) of the surface. Accordingly, the exposure devices, due to being wider than their field of view, must be arranged in several rows in the direction of the width of the surface to the latter.
  • the difficulty of limiting the exposure arrangement in its width to such a degree is on the one hand in the required oblique angle of incidence of an illuminating beam on the DMDs, so that the optical axes of the exposure arrangements can not lie in one plane.
  • special technical measures have to be taken to bring both DMDs into exact optically conjugate positions so that they overlap virtually exactly.
  • Essential to the invention is the superimposed nested beam guidance of the two partial beams extending between two beam splitters, so that the components used for this purpose do not exceed the width as far as possible in the width, which are necessarily predetermined by the extent of the beam splitters and the DMD.
  • the spatially skewed mirror arrangement each of two DMD upstream of a deflection mirrors to illuminate the DMDs.
  • prisms with corresponding reflection surfaces could also be used.
  • Fig. 1 optical diagram of an exposure arrangement
  • Fig. 2 principle arrangement of an exposure device with several
  • FIG. 3a schematic diagram of a part of a first embodiment in plan view
  • FIG. 3b schematic diagram of a part of a first embodiment in front view
  • FIG. 4a schematic diagram of a part of a second embodiment in plan view
  • FIG. 4b schematic diagram of a part of a second embodiment in FIG
  • FIG. 1 shows an optical scheme of an exposure arrangement 13 of an exposure device 14 according to the invention.
  • the exposure arrangement 13 comprises a surface radiator 1 or alternatively the end of an optical fiber fed by a light source, which emits a beam 2 along a main optical axis 3.
  • a first beam splitter 4 divides the beam 2 into a first and a second partial beam 2.1, 2.2, which run along a first and a second optical axis 3.1, 3.2.
  • first optical axis 3.1 On the first optical axis 3.1 is a first IVlikroaptarray 5.1 and on the second optical axis 3.2, a second, same IVlikroaptarray 5.2 is arranged.
  • the radiation beam 2 emanating from the area radiator 1 is homogenized in its intensity distribution via optical elements which are arranged in front of the first beam splitter 4 on the main optical axis 3 and adapted in its cross section to the size of the micromirror arrays 5.1, 5.2, imaged thereon.
  • first and the second optical axis 3.1, 3.2 front deflecting mirrors 6.1, 6.2 and rear deflecting mirrors 7.1, 7.2 are arranged in the same way to each other in front of the micromirror arrays 5.1, 5.2, the partial beams 2.1, 2.2 on the micromirror arrays 5.1, 5.2 under a same steer given angle of incidence.
  • the micromirror arrays 5.1, 5.2 are arranged relative to the second beam splitter 8 such that the sub-beams 2.1, 2.2 structured and reflected by the micromirror arrays 5.1, 5.2 directly or after deflection by a further deflection mirror 7.3 with a same orientation on which the partial beams 2.1, 2.2 recombine second beam splitter 8 impinge.
  • the second beam splitter 8 is followed by a first optically imaging system 9, a microlens array 10 corresponding to the micromirror arrays 5.1, 5.2, and a second optically imaging system 1 1.
  • the structure of an exposure arrangement 13 according to the invention corresponds in the sections in front of the first beam splitter 4 and after the second beam splitter 8 to an exposure arrangement known from the prior art.
  • the part of the optical arrangement is limited by the beam splitters 4, 8.
  • the optical path length along the first optical axis 3.1 and the second optical axis 3.2, between the two beam splitters 4 and 8 is the same.
  • the beam splitters 4, 8, which are advantageously polarizing beam splitter cubes, divide the beam 2 into two partial beams 2.1, 2.2 with a first optical axis 3.1 and a second optical axis 3.2, which run interleaved, or recombine these to the main optical axis 3.
  • micromirror arrays 5.1, 5.2 are aligned spatially in the same direction, that is to say the sub-beams 2.1, 2.2 structured by them are reflected in a same direction.
  • the sub-beams 2.1, 2.2 must be necessarily deflected so that they are at a predetermined angle z. B. 24 ° to the tilt axis of the micromirror arrays 5.1, 5.2 impinge on this.
  • a front 6.1, 6.2 and a rear deflecting mirror 7.1, 7.2 arranged in the beam path in front of the micromirror array 5.1, 5.2.
  • the deflecting mirrors 6.1, 6.2 or 7.1, 7.2 must have a minimum distance from each other depending on the diameter of the incident beam and depending on the angle they are with each other, so that the first deflection mirror 6.1, 7.1 does not shadow the beam reflected by the second deflection mirror 6.2, 7.2 , It should also be noted that the second deflection mirror 6.2, 7.2 has a sufficiently large distance from the micromirror arrays 5.1, 5.2 in order not to shade the beam path reflected by the micromirror array 5.1, 5.2 and thus structured.
  • FIGS. 3a and 3b show a relevant partial section of a first embodiment of an exposure arrangement 13 with the arrangement of the deflecting mirrors 6.1, 7.1 that is relevant for the width of interest, in plan view and front view.
  • the first deflection mirror 6.1 (its surface normal) encloses an angle of 45 ° with the impinging first optical axis 3.1 in the plane of the drawing. It can additionally be tilted about an axis lying parallel to the plane of the drawing on the first deflecting mirror 6.1.
  • the tilting of the second deflection mirror 7.1 is then composed of a rotation about an axis perpendicular to the plane and a more or less strong rotation about an axis parallel to the plane on the second deflection mirror 7.1 axis together.
  • the tilting of the second deflecting mirror 7.1 which is as close as possible to the structured partial beam bundle 2.1 reflected by the micromirror array 5.1, but without shading it, has little relevance for the width.
  • FIGS. 4a and 4b a second embodiment is shown, in which, unlike the first embodiment, the first deflecting mirror 6.1 encloses an angle of greater than 45 ° with the impinging optical axis 3.1.
  • the deflecting mirror 6.1 the larger the angle is to be employed on the width closer to the second deflection mirror 7.1, whereby the space over the width can be reduced.
  • the adaptation of the tilting of the second deflection mirror 7.1 to that of the first 6.1 has hardly any effect on the width.
  • the second embodiment thus results as a more advantageous embodiment compared to the first embodiment.
  • first DMD first micromirror array

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)
  • Optical Elements Other Than Lenses (AREA)

Abstract

Dispositif d'éclairage (14) pour l'éclairage structuré d'une plaquette, comportant au moins un ensemble d'éclairage (13) qui permet de moduler un faisceau lumineux (2) divisé en deux faisceaux lumineux partiels (2.1, 2.2) au moyen de deux réseaux de micromiroirs (5.1; 5.2), afin d'augmenter la vitesse de débit lors de l'éclairage structuré de plaquettes.
EP12722065.5A 2011-04-04 2012-03-08 Dispositif d'éclairage pour l'éclairage structuré d'une surface Withdrawn EP2695015A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102011001785.2A DE102011001785B4 (de) 2011-04-04 2011-04-04 Belichtungseinrichtung zur strukturierten Belichtung einer Fläche
PCT/DE2012/100056 WO2012136199A1 (fr) 2011-04-04 2012-03-08 Dispositif d'éclairage pour l'éclairage structuré d'une surface

Publications (1)

Publication Number Publication Date
EP2695015A1 true EP2695015A1 (fr) 2014-02-12

Family

ID=46125107

Family Applications (1)

Application Number Title Priority Date Filing Date
EP12722065.5A Withdrawn EP2695015A1 (fr) 2011-04-04 2012-03-08 Dispositif d'éclairage pour l'éclairage structuré d'une surface

Country Status (7)

Country Link
US (1) US9110380B2 (fr)
EP (1) EP2695015A1 (fr)
JP (1) JP5965986B2 (fr)
KR (1) KR20140027136A (fr)
DE (1) DE102011001785B4 (fr)
TW (1) TWI537686B (fr)
WO (1) WO2012136199A1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103472683A (zh) * 2013-09-03 2013-12-25 南昌航空大学 数字光刻微雕的制作装置及其雕刻制作方法
WO2017011188A1 (fr) 2015-07-13 2017-01-19 Applied Materials, Inc. Division de lumière quart d'onde
DE102015224522B4 (de) * 2015-12-08 2018-06-21 Carl Zeiss Smt Gmbh Beleuchtungssystem einer mikrolithographischen Projektionsanlage und Verfahren zum Betreiben eines solchen Systems
US10069996B2 (en) * 2016-09-15 2018-09-04 Xerox Corporation System and method for utilizing digital micromirror devices to split and recombine a signal image to enable heat dissipation
JP7020900B2 (ja) * 2017-12-15 2022-02-16 キヤノン株式会社 露光装置および物品の製造方法
US11747731B2 (en) 2020-11-20 2023-09-05 Canon Kabishiki Kaisha Curing a shaped film using multiple images of a spatial light modulator

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5298365A (en) * 1990-03-20 1994-03-29 Hitachi, Ltd. Process for fabricating semiconductor integrated circuit device, and exposing system and mask inspecting method to be used in the process
US5229872A (en) * 1992-01-21 1993-07-20 Hughes Aircraft Company Exposure device including an electrically aligned electronic mask for micropatterning
US5329335A (en) * 1992-03-17 1994-07-12 Nippon Steel Corporation Method and apparatus for projection exposure
JP2895703B2 (ja) * 1992-07-14 1999-05-24 三菱電機株式会社 露光装置およびその露光装置を用いた露光方法
EP0671854B1 (fr) * 1994-03-09 2000-05-31 Daewoo Electronics Co., Ltd Système optique de projection
DE19522936C2 (de) * 1995-06-23 1999-01-07 Fraunhofer Ges Forschung Vorrichtung zum Strukturieren einer photolithographischen Schicht
EP0991959B1 (fr) * 1996-02-28 2004-06-23 Kenneth C. Johnson Scanner a microlentilles pour la microlithographie et la microscopie confocale a champ large
US5864418A (en) * 1996-08-30 1999-01-26 Bayer Corporation Agfa Division Multi-beam scanner with mechanically moving element for scanning imaging surfaces
US6359662B1 (en) * 1999-11-05 2002-03-19 Agilent Technologies, Inc. Method and system for compensating for defects in a multi-light valve display system
US6407766B1 (en) * 2000-07-18 2002-06-18 Eastman Kodak Company Method and apparatus for printing to a photosensitive media using multiple spatial light modulators
JP2002350775A (ja) * 2001-05-30 2002-12-04 Fuji Photo Optical Co Ltd プロジェクタ装置
TW529172B (en) * 2001-07-24 2003-04-21 Asml Netherlands Bv Imaging apparatus
JP2004126034A (ja) * 2002-09-30 2004-04-22 Fuji Photo Film Co Ltd 画像形成装置
US6876494B2 (en) 2002-09-30 2005-04-05 Fuji Photo Film Co., Ltd. Imaging forming apparatus
JP4104949B2 (ja) * 2002-09-30 2008-06-18 富士フイルム株式会社 画像形成装置
JP4244156B2 (ja) * 2003-05-07 2009-03-25 富士フイルム株式会社 投影露光装置
US7227613B2 (en) * 2004-07-26 2007-06-05 Asml Holding N.V. Lithographic apparatus having double telecentric illumination
WO2006120634A2 (fr) * 2005-05-13 2006-11-16 Nxp B.V. Dispositif modulateur spatial de lumiere, appareil de lithographie, dispositif d'affichage, procede de production d'un faisceau lumineux possedant un profil de lumiere spatiale et procede de fabrication d'un dispositif associe
JPWO2008007633A1 (ja) * 2006-07-12 2009-12-10 株式会社ニコン 照明光学装置、露光装置、およびデバイス製造方法
SG156564A1 (en) * 2008-04-09 2009-11-26 Asml Holding Nv Lithographic apparatus and device manufacturing method
JP5353408B2 (ja) * 2009-04-23 2013-11-27 株式会社ニコン 照明光学系、露光装置、およびデバイス製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO2012136199A1 *

Also Published As

Publication number Publication date
CN103649815A (zh) 2014-03-19
DE102011001785A1 (de) 2012-10-04
JP2014514759A (ja) 2014-06-19
US9110380B2 (en) 2015-08-18
WO2012136199A1 (fr) 2012-10-11
KR20140027136A (ko) 2014-03-06
DE102011001785B4 (de) 2015-03-05
TWI537686B (zh) 2016-06-11
US20140118711A1 (en) 2014-05-01
JP5965986B2 (ja) 2016-08-10
TW201241577A (en) 2012-10-16

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