EP2675938A1 - Verfahren zur herstellung eines photokatalysatormaterials - Google Patents
Verfahren zur herstellung eines photokatalysatormaterialsInfo
- Publication number
- EP2675938A1 EP2675938A1 EP12709913.3A EP12709913A EP2675938A1 EP 2675938 A1 EP2675938 A1 EP 2675938A1 EP 12709913 A EP12709913 A EP 12709913A EP 2675938 A1 EP2675938 A1 EP 2675938A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- substrate
- glass
- photocatalytic layer
- titanium oxide
- compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000001699 photocatalysis Effects 0.000 title claims abstract description 47
- 239000000463 material Substances 0.000 title claims abstract description 35
- 238000004519 manufacturing process Methods 0.000 title abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 68
- 238000000034 method Methods 0.000 claims abstract description 46
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 42
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 29
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 25
- 150000001875 compounds Chemical class 0.000 claims abstract description 25
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims abstract description 23
- 238000000151 deposition Methods 0.000 claims abstract description 19
- 239000010936 titanium Substances 0.000 claims abstract description 17
- 125000004185 ester group Chemical group 0.000 claims abstract description 16
- -1 titanium alkoxide Chemical class 0.000 claims abstract description 16
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 15
- 239000008246 gaseous mixture Substances 0.000 claims abstract description 10
- 239000011521 glass Substances 0.000 claims description 34
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 21
- DTQVDTLACAAQTR-UHFFFAOYSA-N Trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 claims description 20
- 230000008569 process Effects 0.000 claims description 20
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical group CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 claims description 12
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 7
- 235000011054 acetic acid Nutrition 0.000 claims description 7
- 229960000583 acetic acid Drugs 0.000 claims description 7
- 229910052731 fluorine Inorganic materials 0.000 claims description 7
- 239000011737 fluorine Substances 0.000 claims description 7
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 239000000460 chlorine Substances 0.000 claims description 4
- 238000007667 floating Methods 0.000 claims description 4
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 claims description 4
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052794 bromium Inorganic materials 0.000 claims description 2
- 229910052801 chlorine Inorganic materials 0.000 claims description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 claims description 2
- 239000002241 glass-ceramic Substances 0.000 claims description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 2
- DUWWHGPELOTTOE-UHFFFAOYSA-N n-(5-chloro-2,4-dimethoxyphenyl)-3-oxobutanamide Chemical compound COC1=CC(OC)=C(NC(=O)CC(C)=O)C=C1Cl DUWWHGPELOTTOE-UHFFFAOYSA-N 0.000 claims description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 2
- 235000019260 propionic acid Nutrition 0.000 claims description 2
- 229920006395 saturated elastomer Polymers 0.000 claims description 2
- 125000005843 halogen group Chemical group 0.000 claims 1
- 229960005196 titanium dioxide Drugs 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 62
- 230000008021 deposition Effects 0.000 description 13
- 239000012159 carrier gas Substances 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 239000002243 precursor Substances 0.000 description 9
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 230000005855 radiation Effects 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 5
- 229910001887 tin oxide Inorganic materials 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000004630 atomic force microscopy Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 230000005012 migration Effects 0.000 description 4
- 238000013508 migration Methods 0.000 description 4
- 229910052718 tin Inorganic materials 0.000 description 4
- RBTBFTRPCNLSDE-UHFFFAOYSA-N 3,7-bis(dimethylamino)phenothiazin-5-ium Chemical compound C1=CC(N(C)C)=CC2=[S+]C3=CC(N(C)C)=CC=C3N=C21 RBTBFTRPCNLSDE-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 239000005357 flat glass Substances 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 229960000907 methylthioninium chloride Drugs 0.000 description 3
- 239000005361 soda-lime glass Substances 0.000 description 3
- 239000004408 titanium dioxide Substances 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- 229910004613 CdTe Inorganic materials 0.000 description 2
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 150000004703 alkoxides Chemical class 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- QEWYKACRFQMRMB-UHFFFAOYSA-N fluoroacetic acid Chemical compound OC(=O)CF QEWYKACRFQMRMB-UHFFFAOYSA-N 0.000 description 2
- 239000002346 layers by function Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000000391 spectroscopic ellipsometry Methods 0.000 description 2
- 238000000411 transmission spectrum Methods 0.000 description 2
- 229910000906 Bronze Inorganic materials 0.000 description 1
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000323 aluminium silicate Inorganic materials 0.000 description 1
- 230000003373 anti-fouling effect Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- FPCJKVGGYOAWIZ-UHFFFAOYSA-N butan-1-ol;titanium Chemical compound [Ti].CCCCO.CCCCO.CCCCO.CCCCO FPCJKVGGYOAWIZ-UHFFFAOYSA-N 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- PBWZKZYHONABLN-UHFFFAOYSA-N difluoroacetic acid Chemical compound OC(=O)C(F)F PBWZKZYHONABLN-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- XGZNHFPFJRZBBT-UHFFFAOYSA-N ethanol;titanium Chemical compound [Ti].CCO.CCO.CCO.CCO XGZNHFPFJRZBBT-UHFFFAOYSA-N 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 238000007496 glass forming Methods 0.000 description 1
- 229960004275 glycolic acid Drugs 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910021644 lanthanide ion Inorganic materials 0.000 description 1
- 239000012705 liquid precursor Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000010944 pre-mature reactiony Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000007652 sheet-forming process Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- WROMPOXWARCANT-UHFFFAOYSA-N tfa trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F.OC(=O)C(F)(F)F WROMPOXWARCANT-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/405—Oxides of refractory metals or yttrium
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
- C03C17/25—Oxides by deposition from the liquid phase
- C03C17/256—Coating containing TiO2
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
- C07F5/003—Compounds containing elements of Groups 3 or 13 of the Periodic Table without C-Metal linkages
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45595—Atmospheric CVD gas inlets with no enclosed reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/212—TiO2
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/70—Properties of coatings
- C03C2217/71—Photocatalytic coatings
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/70—Properties of coatings
- C03C2217/77—Coatings having a rough surface
Definitions
- the invention relates to the field of materials comprising a substrate provided with a photocatalytic coating, in particular intended to be incorporated in photovoltaic cells.
- Titanium oxide is first of all photocatalytic, that is to say that it is capable under suitable radiation, generally ultraviolet radiation, of catalyzing the degradation reactions of organic compounds. This photocatalytic activity is initiated within the layer by the creation of an electron-hole pair.
- the titanium dioxide has an extremely pronounced hydrophilicity when it is irradiated by this same type of radiation. This strong hydrophilicity, sometimes called “super-hydrophilic", allows the evacuation of mineral soils under water runoff, for example rainwater.
- Such materials, in particular used to form glazings are described, for example, in application EP-A-0 850 204.
- Titanium dioxide has a high refractive index, which results in important light reflection factors for substrates with photocatalytic coatings. This is a disadvantage in the field of glazing for the building, and especially in the field of photovoltaic cells, for which it is necessary to maximize the transmission to the photovoltaic material, and thus minimize any absorption and reflection of solar radiation.
- photovoltaic cells with a photocatalytic coating, because the deposition of dirt is able to reduce the efficiency of photovoltaic cells of ⁇ 6 "6 per year.This figure is obviously dependent on the geographical location cells.
- the aim of the invention is to propose a process for obtaining photocatalytic materials based on titanium oxide having low light reflection factors that can be used in photovoltaic cells.
- the object of the invention is a process for obtaining a material comprising a substrate coated on at least a part of at least one of its faces with a titanium oxide-based photocatalytic layer, said method comprising depositing said photocatalytic layer by a chemical vapor deposition process wherein a gaseous mixture comprising at least one titanium alkoxide and at least one compound comprising at least one carboxyl or ester group is contacted with said substrate.
- the substrate is typically a glass sheet, especially extra-clear glass, as described in more detail in the following text.
- the photocatalytic layer generally has an index of refraction of at most 1.9 for a wavelength of 550 nm.
- the refractive index can be measured by variable angle spectroscopic ellipsometry (VASE).
- the subject of the invention is also a process for obtaining a photovoltaic cell comprising a front-face substrate which is a substrate coated on at least a part of at least one of its faces with a photocatalytic layer based on titanium oxide, said process comprising a step of depositing said photocatalytic layer by a chemical vapor deposition process in which a gaseous mixture comprising at least one titanium alkoxide and at least one compound comprising at least one carboxyl or ester group is contacted with said substrate.
- the substrate is typically a glass sheet, especially extra-clear glass, as described in more detail in the following text.
- Front face substrate means the substrate which is the first crossed by solar radiation.
- the photocatalytic coating is then generally positioned outward, so that the self-cleaning effect can be usefully demonstrated.
- the subject of the invention is also a material that can be obtained by the process according to the invention.
- the various preferred features described below are therefore characteristics applicable both to the processes according to the invention and to the material according to the invention.
- Chemical vapor deposition is a pyrolysis process in which a gaseous mixture comprising a carrier gas and diluted precursors is contacted with a hot substrate, the precursors decomposing and / or chemically reacting under the effect of the heat of the substrate.
- the carrier gas is generally nitrogen.
- a carboxyl group is a -CO 2 H group, especially present in carboxylic acids.
- An ester group is a -CO 2 R group, where R is a carbon group.
- the inventors have been able to demonstrate that the addition of a compound comprising at least one carboxyl or ester group, in particular a carboxylic acid, made it possible to obtain layers having reduced light reflection factors, in certain cases of the order those of the uncoated substrate, or even lower thereto, without appreciable loss of photocatalytic activity. It is thus possible to obtain, by a CVD process, titanium oxide layers having both a satisfactory photocatalytic activity and a low reflection.
- the substrate is a glass or glass-ceramic sheet.
- the sheet may be flat or curved, and have any type of dimensions, especially greater than 1 meter.
- the glass is preferably of the silico-soda-lime type, but other types of glasses, such as borosilicate glasses or aluminosilicates can also be used.
- the glass may be clear or extra-clear, or tinted, for example blue, green, amber, bronze or gray.
- the thickness of the glass sheet is typically between 0.5 and 19 mm, especially between 2 and 12 mm, or even between 4 and 8 mm.
- the glass is preferably extra-clear; it preferably comprises a total weight content of iron oxide of at most 150 ppm, or even 100 ppm and even 90 ppm, or even a redox of at most 0.2, especially 0.1 and even a zero redox.
- Redox means the ratio of the ferrous iron oxide content by weight (expressed as form FeO) and the total weight content of iron oxide (expressed as Fe 2 O 3 ).
- Chemical vapor deposition is achieved by contacting the gas mixture with the generally hot substrate.
- the carrier gas, the or each titanium alkoxide and the or each compound comprising at least one carboxyl or ester group are mixed to form the gaseous mixture, which is passed through a nozzle in the deposition chamber. , close to the substrate, generally at a distance from the substrate ranging from 1 to 10 mm, in particular from 3 to 6 mm.
- the carrier gas and the titanium alkoxide are mixed to form a first gaseous mixture
- the carrier gas and the compound comprising at least one carboxyl or ester group are mixed to form a second gaseous mixture
- the first and second gaseous mixtures are each separately passed through a different nozzle in the deposition chamber, thus obtaining the final mixture in the deposition chamber.
- the second embodiment has the advantage of avoiding any premature reaction between the titanium alkoxide and the compound comprising at least one carboxyl or ester group, which could lead to plugging of the nozzle.
- the mixture of the carrier gas with the precursor is generally carried out by passing the carrier gas through the liquid precursor at a suitable temperature for driving the precursor in gaseous form.
- the or each nozzle is fixed and located above the moving substrate.
- the chemical vapor deposition is preferably carried out at atmospheric pressure on a heated substrate at a temperature ranging from 400 to 700 ° C., preferably from 500 to 600 ° C., or even from 500 to 560 ° C. . Temperatures ranging from 500 to 560 ° C make it possible to maximize the crystallization in anatase form of the titanium oxide and therefore the photocatalytic activity.
- the chemical vapor deposition is advantageously implemented on a flat glass production line, in particular on a glass floating line, when the glass substrate is within the floating device (that is to say in the enclosure where the glass ribbon is poured onto the molten tin), or when the glass substrate is between said float device and the lehr, or when the glass substrate is within the lehr.
- the deposition is implemented when the glass substrate is between the float device and the lehr, this zone corresponding to the preferred deposition temperature ranges.
- the lehr is the enclosure in which the glass is annealed in order to evacuate any mechanical stresses within it.
- the deposit can also be implemented on a flat glass manufacturing line by rolling between metal or ceramic rolls, a method used to form textured glass sheets in particular.
- the chemical vapor deposition can be implemented in recovery, that is to say in a dedicated and decoupled installation of the flat glass manufacturing line.
- the titanium alkoxide is preferably chosen from the compounds of formula Ti (OR 1 ) (OR 2 ) (OR 3 ) (OR 4 ), each radical R 1 being a linear or branched alkyl radical, identical or different, in C 1 C12.
- R 1 radicals are identical and are linear or branched C 2 -C 5 alkyls.
- a particularly preferred titanium alkoxide is titanium tetraisopropoxide.
- Other interesting alkoxides are tetraethoxytitanium and tetrabutoxytitanium.
- the compound comprising at least one carboxyl or ester group is preferably a carboxylic acid or an ester.
- the carboxylic acid is preferably chosen from the compounds of formula X 1 X 2 X 3 C-CO 2 H, where X 1 , X 2 , X 3 , which are identical or different, are chosen from the hydrogen atom, the carbon atoms and halogen, especially fluorine, chlorine or bromine, or straight or branched carbon chains, saturated or unsaturated, optionally hydroxylated, in particular alkyl radicals C 1 -C 6, particularly C 1 -C 3.
- the carboxylic acid can be weak or strong, preferably low.
- the constancy of acidity Ka at 25 ° C. of the carboxylic acid is preferably less than or equal to 5.10 -5 , especially 2.10 -5 .
- the fluorine is probably evacuated with the carrier gas, without being incorporated in the layer.
- the titanium alkoxide and the compound comprising at least one carboxyl or ester group are preferably the only precursors used for CVD deposition. Good results have been obtained when the alkoxide is titanium tetraisopropoxide and the compound comprising at least one carboxyl or ester group is ethanoic acid or trifluoroacetic acid.
- the ratio R between the molar flow rate of compound comprising at least one carboxyl or ester group and the molar flow rate of titanium alkoxide is preferably at least 0.1%, in particular 0.2% or even 0.3%, or even 0.5%.
- the ratio R is preferably at most 80%, especially 70% or 60%. In some embodiments, this ratio R is at most 5%, especially 3%, or even 2%.
- Low R ratios do not sufficiently reduce the refractive index of the photocatalytic layer and therefore the light reflection factor. R ratios too high are accompanied by a decrease in photocatalytic activity and degradation of crystallization of titanium oxide.
- the substrate is coated on all of one of its faces of the photocatalytic layer based on titanium oxide.
- the photocatalytic layer based on titanium oxide is preferably composed of titanium oxide, in particular crystallized in anatase form, which is the most active form. A mixture of anatase and rutile phases is also conceivable.
- the titanium oxide may be pure or doped, for example by transition metals (especially W, Mo, V, Nb), lanthanide ions or noble metals (such as, for example, platinum or palladium), or by nitrogen, carbon or fluorine atoms. These different forms of doping make it possible to increase the activity photocatalytic material, either to shift the gap of titanium oxide to wavelengths near the visible range or included in this area.
- the photocatalytic layer based on titanium oxide does not contain nitrogen atoms, as this contributes to reducing the optical transmission of the layer.
- the titanium oxide layer is normally the last layer of the stack deposited on the substrate, ie the layer of the stack farthest from the substrate. It is important that the photocatalytic layer is in contact with the atmosphere and its pollutants. It is however possible to deposit on the photocatalytic layer a very thin layer, generally discontinuous or porous. For example, it may be a layer based on noble metals intended to increase the photocatalytic activity of the material. It may also be thin hydrophilic layers, for example silica, as taught in applications WO 2005/040058 or WO 2007/045805.
- One or more layers acting as a barrier to the migration of alkaline ions from the substrate can be deposited by CVD before the photocatalytic layer. They are preferably based on or consisting of an oxide, a nitride, an oxynitride or an oxycarbide of at least one of the following elements: Si, Al, Sn, Zn, Zr. Of these materials, silica or silicon oxycarbide are preferred because of their ease of deposition by the CVD technique.
- One or more low emissivity layers such as fluorine or antimony doped tin oxide layers.
- Such layers make it possible to limit the condensation (fog and / or frost) on the surface of the multiple glazings, in particular when they are inclined (for example when they are integrated with roofs or verandas).
- the presence of a low-emissivity layer in face 1 makes it possible to limit heat exchanges with the outside during the night, and thus to maintain a surface temperature of the glass greater than the dew point. The appearance of mist or frost is therefore strongly reduced or completely eliminated.
- the photocatalytic layer can be deposited directly on the doped tin oxide layer. The latter usually imposes the less active rutile form, but the crystallization in the gas phase obtained by the process according to the invention overcomes this disadvantage.
- An additional advantage of the process according to the invention in this case is therefore to allow the deposition of layers in which the titanium oxide is crystallized in the anatase form (the most active) and deposited directly on a tin oxide layer dope.
- the thickness of the photocatalytic layer is preferably between 2 and 1000 nanometers, in particular between 5 and 150 nm, or even between 8 and 50 nm. A high thickness makes it possible to increase the photocatalytic activity of the layer but increases the luminous reflection.
- the material (obtained) according to the invention preferably has a light transmittance (within the meaning of ISO 9050: 2003) of at least 80%, even 85% and even 90%.
- the material (obtained) according to the invention preferably has a light reflection factor (within the meaning of ISO 9050: 2003) of at most 15%, preferably 10%, in particular 8%.
- the light reflection factor of the material may therefore be less than or equal to that of the uncoated substrate.
- the invention also relates to a glazing unit or a photovoltaic cell comprising at least one material according to the invention.
- the glazing may be single or multiple (in particular double or triple), in the sense that it may comprise several glass sheets leaving a space filled with gas.
- the glazing can also be laminated and / or tempered and / or hardened and / or curved.
- the other face of the material according to the invention may be coated with another functional layer or a stack of functional layers. It may especially be another photocatalytic layer. It may also be layers or stacks with thermal function, in particular antisolar or low-emissive, for example stacks comprising a silver layer protected by dielectric layers. It may still be a mirror layer, in particular based on silver. It can finally be a lacquer or an enamel intended to opacify the glazing to make a facade facing panel called lighter. The lighter is arranged on the facade alongside the non - opaque glazings and allows to obtain facades entirely glazed and homogeneous from the aesthetic point of view.
- the material according to the invention is preferably the front face substrate of the cell, that is to say the one which is the first crossed by solar radiation.
- the photocatalytic coating is then positioned outwards, so that the self-cleaning effect can be useful.
- the glass sheet may advantageously be coated, on the face opposite to the face provided with the coating according to the invention, with at least one transparent and electroconductive thin layer, for example based on Sn0 2 : F, Sn0 2 : Sb, ZnO: Al, ZnO: Ga.
- These layers may be deposited on the substrate by various deposition methods, such as chemical vapor deposition (CVD) or sputtering deposition, in particular assisted by magnetic field (magnetron process).
- CVD chemical vapor deposition
- sputtering deposition in particular assisted by magnetic field (magnetron process).
- magnetic field magnetic field
- halide or organometallic precursors are vaporized and transported by a carrier gas to the surface of the hot glass, where they decompose under the effect of heat to form the thin layer.
- the advantage of the CVD process is that it is possible to implement it in the glass sheet forming process, especially when it is a floating process. It is thus possible to deposit the layer when the glass sheet is on the tin bath, at the exit of the tin bath, or in the lehr, that is to say when the glass sheet is annealed to eliminate mechanical stress.
- the glass sheet coated with a transparent and electroconductive layer may in turn be coated with an amorphous or polycrystalline silicon semiconductor, with chalcopyrites (in particular of the CIS-CuInSe2 or CIGS-CuInGaSe2 type) or with CdTe for to form a photovoltaic cell.
- chalcopyrites in particular of the CIS-CuInSe2 or CIGS-CuInGaSe2 type
- CdTe for to form a photovoltaic cell.
- Another advantage of the CVD process resides in obtaining a rougher roughness, which generates a phenomenon of trapping of light, which increases the amount of photons absorbed by the semiconductor.
- the surface of the glass sheet may be textured, for example have patterns (especially pyramid), as described in WO 03/046617, WO 2006/134300, WO 2006/134301 or WO 2007/015017. These textures are generally obtained using a glass forming by rolling.
- the photovoltaic cell is typically formed by joining the front-face substrate (obtained according to the invention) and a back-face substrate, for example by means of a lamination interlayer made of thermosetting plastics material, in particular PVB, PU or EVA. Between the front and rear face substrates are arranged electrodes, generally in the form of thin layers, surrounding a material with photovoltaic properties.
- the backside substrate is typically a glass sheet.
- the material with photovoltaic properties may be solid or in thin film form, depending on the technology, on the front-face substrate or on the back-face substrate.
- the material with photovoltaic properties is amorphous or polycrystalline silicon or CdTe, it is generally deposited on the front face substrate, framed by electroconductive thin layers and transparent, typically based on tin oxide (doped with fluorine or with antimony), zinc oxide (doped with aluminum or gallium), or with tin oxide and indium (ITO).
- the material with photovoltaic properties is based on Cu (In, Ga) Se2 (CIGS), it is generally deposited on a layer molybdenum conductor, itself deposited on the back-face substrate.
- (In, Ga) we mean that the material can comprise In and / or Ga, according to any possible combinations of contents: Ini_ x Ga x , x being able to take any value of 0 to 1. In particular, x can be zero (material of type CIS).
- Figures 1 to 3 are scanning electron micrographs.
- TiPT titanium tetraisopropoxide
- TFA carboxyl group or ester trifluoroacetic acid
- the ratio R between the flow rate of TFA and the flow rate of TiPT varies from 0 (Comparative Example C1 without the use of a carboxylic acid) to 3%.
- the gas mixture is carried out by passing nitrogen (carrier gas) in TiPT heated to 70-80 ° C, and in TFA at 5 ° C.
- the temperature of the substrate is 570 ° C during deposition.
- the deposit is carried out at atmospheric pressure.
- Table 1 summarizes the results obtained, indicating for each example: the ratio R between the flow rate of TFA and the TiPT flow rate, expressed in%, the photocatalytic activity, denoted Kb, measured in the following manner: an aqueous solution of methylene blue is placed in contact in a sealed cell with the substrate coated (the latter forming the bottom of the cell). After exposure to ultraviolet radiation for 30 minutes, the concentration of methylene blue is evaluated by a light transmission measurement.
- the value of photocatalytic activity expressed in gl -1 ⁇ min -1, corresponding to the decrease in the concentration of methylene blue per unit of time of exposure, the light reflection in the sense of ISO 9050: 2003, and rated RL expressed in%, the refractive index at 550 nm, denoted n, measured by variable angle spectroscopic ellipsometry, the mass quantity of T1O 2 in the layer, denoted "q T1O 2 ", evaluated by means of a microprobe, expressed in ⁇ g / cm 2 , the mean size of the anatase grains, evaluated by atomic force microscopy (AFM), the roughness Ra, also evaluated by atomic force microscopy (AFM) on a surface of 1 * 1 ⁇ 2 .
- AFM atomic force microscopy
- Ra atomic force microscopy
- Figures 1, 2 and 3 are scanning electron micrographs illustrating the morphology of the layers of the respective examples Cl, 3 and 5.
- a layer of silica with a thickness of 80 nm is deposited on extra-clear silico-soda-lime glass substrates 3 mm thick sold by the applicant under the name SGG Diamant Solar®. thickness, layer acting as a barrier to the migration of alkali.
- titanium oxide precursor titanium tetraisopropoxide TiPT
- acetic acid carboxyl group ethanoic acid
- the ratio R between the molar flow rates of acetic acid and TiPT varies from 0 (Comparative Example C2) to 80%.
- the gas mixture is made by passing nitrogen (carrier gas) in TiPT heated to 85 ° C, and in ethanoic acid at 25 ° C.
- the temperature of the substrate is 520 ° C during the deposition.
- the deposit is carried out at atmospheric pressure.
- the substrates obtained are particularly suitable for serving as substrates for the front face of a photovoltaic cell.
- Their transmission TSQE (corresponding to the convolution of the transmission spectrum, the solar emission spectrum, and the quantum efficiency of the photovoltaic material) for an amorphous silicon photovoltaic material thus passes from 83.9% for Example C2 to 88.2% for Example 9.
- a layer of silica with a thickness of 80 nm is deposited on 3 mm thick extra-clear silico-soda-lime glass substrates marketed by the applicant under the name "SGG Diamant Solar®". thickness, layer acting as a barrier to the migration of alkali.
- a layer of titanium oxide is deposited on each substrate, using as titanium oxide precursor titanium tetraisopropoxide (TiPT) and as a compound comprising at least one carboxyl group trifluoroacetic acid (TFA) .
- the ratio R between the molar flow rates of trifluoroacetic acid and TiPT varies from 0 (comparative example C3) to 90%.
- the gas mixture is made by passing nitrogen (carrier gas) in TiPT heated at 85 ° C, and in TFA at 15 ° C.
- the temperature of the substrate is 520 ° C during the deposition.
- the deposit is carried out at atmospheric pressure.
- the substrates obtained are particularly suitable for serving as substrates for the front face of a photovoltaic cell.
- Their transmission TSQE (corresponding to the convolution of the transmission spectrum, the solar emission spectrum, and the quantum efficiency of the photovoltaic material) for an amorphous silicon photovoltaic material thus passes from 83.9% for the example C3 to 88.6% for Example 12.
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FR1151250A FR2971519A1 (fr) | 2011-02-16 | 2011-02-16 | Procede d’obtention d’un materiau photocatalytique |
PCT/FR2012/050328 WO2012110746A1 (fr) | 2011-02-16 | 2012-02-15 | Procede d'obtention d'un materiau photocatalytique |
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EP12709913.3A Withdrawn EP2675938A1 (de) | 2011-02-16 | 2012-02-15 | Verfahren zur herstellung eines photokatalysatormaterials |
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CN (1) | CN103370441B (de) |
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WO (1) | WO2012110746A1 (de) |
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EP2463403A1 (de) * | 2010-12-10 | 2012-06-13 | LG Electronics Inc. | Produkt mit funktioneller Schicht und Verfahren zur ihrer Herstellung |
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FR2738813B1 (fr) | 1995-09-15 | 1997-10-17 | Saint Gobain Vitrage | Substrat a revetement photo-catalytique |
JP2002187719A (ja) * | 2000-12-19 | 2002-07-05 | Central Glass Co Ltd | 二酸化チタン被膜の形成法 |
FR2832811B1 (fr) | 2001-11-28 | 2004-01-30 | Saint Gobain | Plaque transparente texturee a forte transmission de lumiere |
GB0217553D0 (en) * | 2002-07-30 | 2002-09-11 | Sheel David W | Titania coatings by CVD at atmospheric pressure |
FR2861385B1 (fr) | 2003-10-23 | 2006-02-17 | Saint Gobain | Substrat, notamment substrat verrier, portant au moins un empilement couche a propriete photocatalytique sous couche de croissance heteroepitaxiale de ladite couche |
DE102005027737B4 (de) | 2005-06-16 | 2013-03-28 | Saint-Gobain Glass Deutschland Gmbh | Verwendung einer transparenten Scheibe mit einer dreidimensionalen Oberflächenstruktur als Deckscheibe für Bauelemente zur Nutzung des Sonnenlichts |
DE102005027799B4 (de) | 2005-06-16 | 2007-09-27 | Saint-Gobain Glass Deutschland Gmbh | Verfahren zum Herstellen einer transparenten Scheibe mit einer Oberflächenstruktur und Vorrichtung zum Durchführen des Verfahrens |
FR2889525A1 (fr) | 2005-08-04 | 2007-02-09 | Palumed Sa | Nouveaux derives de polyquinoleines et leur utilisation therapeutique. |
AU2006303170B2 (en) | 2005-10-21 | 2012-10-11 | Saint-Gobain Glass France | Antifouling material and production method thereof |
CN101573468B (zh) * | 2006-12-29 | 2013-10-30 | 3M创新有限公司 | 制备无机或无机/有机复合膜的方法 |
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- 2012-02-15 EP EP12709913.3A patent/EP2675938A1/de not_active Withdrawn
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CN103370441B (zh) | 2016-06-01 |
FR2971519A1 (fr) | 2012-08-17 |
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