EP2655685A1 - Procédé et dispositif pour déposer du silicium sur un substrat - Google Patents

Procédé et dispositif pour déposer du silicium sur un substrat

Info

Publication number
EP2655685A1
EP2655685A1 EP11811328.1A EP11811328A EP2655685A1 EP 2655685 A1 EP2655685 A1 EP 2655685A1 EP 11811328 A EP11811328 A EP 11811328A EP 2655685 A1 EP2655685 A1 EP 2655685A1
Authority
EP
European Patent Office
Prior art keywords
substrate
precursor
silicon
deposition
charged particles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP11811328.1A
Other languages
German (de)
English (en)
Inventor
Michael Huth
Andreas Terfort
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Goethe Universitaet Frankfurt am Main
Original Assignee
Goethe Universitaet Frankfurt am Main
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Goethe Universitaet Frankfurt am Main filed Critical Goethe Universitaet Frankfurt am Main
Publication of EP2655685A1 publication Critical patent/EP2655685A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4488—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/60—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which all the silicon atoms are connected by linkages other than oxygen atoms
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/16—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/4551—Jet streams
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/487—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using electron radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials

Definitions

  • the invention relates to a method for depositing silicon on a substrate using a focused beam of charged particles, wherein a silicon-containing precursor is provided which is dissociated by the beam in the immediate vicinity of the substrate. It further relates to a corresponding device.
  • Coating processes for example for the deposition of silicon on a substrate (S1O 2 , Au, etc.) are used in many fields of microelectronics and related fields, but also in applied and fundamentally oriented research.
  • Various methods are known for depositing substances (diamond layers, silicon-containing layers, tin oxide layers) on a substrate, for example chemical vapor deposition (CVD) or electron beam-based vapor deposition (EB-CVD).
  • CVD chemical vapor deposition
  • EB-CVD electron beam-based vapor deposition
  • the latter method is also referred to in the literature as EBID (Electron Beam Induced Deposition) or, when using an ion beam as IBID (Ion Beam Induced Deposition or as IB-CVD) method.
  • IBID Ion Beam Induced Deposition
  • FPBID Fluorused Particle Beam Induced Deposition
  • the substrate is usually heated to temperatures of several hundred ° C. From one or more reactants solid components are then deposited by chemical reactions from the gas phase, which are deposited on the substrate.
  • a precursor is provided in the immediate vicinity of the substrate, that is to say substantially on its surface, from which the solid component, for example silicon, is deposited by means of a focused electron beam.
  • a method can also be carried out with ion beams, which are e.g. can be generated by a fine ion beam system.
  • the surface of the substrate can be coated with substantially two-dimensional as well as three-dimensional structures.
  • chlorine-containing precursors and in particular of SiH 2 Cl 2 has the disadvantages that the unintentional but usually unavoidable inclusion of chlorine atoms in the landfill deteriorates the electrical properties of the landfill.
  • chlorine atoms can combine with the water content of the residual gas in the vacuum chamber, for example, to HCl and exert unwanted corrosive effects on the substrate, causing it to be damaged. In the event that other structures are already in the vicinity of the deposition site, these can also be endangered and damaged.
  • the liberated chlorine due to its reactivity lead to damage to the separator itself (corrosion).
  • the invention is therefore based on the object to provide a method which allows in a particularly effective, material-friendly and precise manner, the direct deposition of silicon on a substrate.
  • a suitable device should be specified.
  • this object is achieved according to the invention in that a polysilane is used as precursor.
  • the invention is based on the consideration that the properties of Siliziumdepo- on substrates in modern applications must meet increased demands on their properties. These requirements relate in particular to the conductivity, the structure size and the purity of the landfill. Also, the substrate should not be damaged or contaminated during the deposition process.
  • the silicon In order to meet these requirements, it is necessary to deposit the silicon directly on the substrate, in particular without the use of a lithographic masking technique. To this end, the silicon should, if possible, be deposited on the substrate by means of direct deposition by particle beam-induced dissociation of a precursor. In addition, a suitable precursor or precursor should be used to ensure the highest possible quality of the silicon debris. The precursor should be as free of chlorine as possible, as chlorine can cause damage to landfill and substrate due to its highly corrosive properties.
  • Si deposition can be achieved by using a silicon-containing precursor from the class of polysilanes or a polysilane-containing precursor.
  • Polysilanes are chlorine-free, so the harmful effects of chlorine on substrate and landfill can be avoided.
  • Polysilanes also have chemical structures that can be precisely dissociated by a focused charged particle beam and thus allow a precise deposition of the silicon.
  • the precursor molecules adsorbed on the substrate surface are decomposed into permanent and volatile components by various inelastic processes (for example "dissociative electron attachment") .
  • the permanent component forms the silicon deposit.
  • neopentane silane (Si 5 H 12 ) is used as the precursor.
  • Neopentasilane is chlorine-free, so that the highly corrosive effects of chlorine, which occur when using chlorine-containing precursors, can be completely eliminated, and at room temperature has a vapor pressure favorable for focussed particle deposition processes, ie preferably in the range 0.1-100 mbar .
  • a particularly precise deposition or deposition with high spatial resolution, in particular in the lateral direction to the substrate, can be achieved by the use of an electron beam.
  • the particle beam may consist of ions, for example Ga + ions. The use of such ion beams usually leads to a doping of the landfill.
  • the particle beam is advantageously moved in a rastered manner over the landfill.
  • landfills having predetermined two- or three-dimensional structures can be produced.
  • such screening is advantageously carried out with the aid of a scanning electron microscope (SEM), which also generates the electron beam.
  • SEM scanning electron microscope
  • the lateral resolution of the method is determined in this case by the resolution of the scanning electron microscope used. In this case, however, the exit region of the secondary electrons from the surface of the substrate in the vicinity of the beam focus must also be taken into account. At typical beam energies of 5 to 15 keV and currents around 100 pA, minimum structure widths of 10 to 20 nm or even less can be achieved with high-resolution microscopes.
  • the screening is preferably carried out by a scanning ion microscope. In this case, structure sizes of about 30 nm can be achieved.
  • the provision or offering of the precursor on the surface of the substrate advantageously takes place by means of a gas injection system, through which the precursor can be targeted.
  • a gas injection system through which the precursor can be targeted.
  • the process is carried out at room temperature.
  • the vapor pressure of neopentasilane at room temperature and other polysilanes mentioned above is in the range favorable for FPBID processes. This makes it possible to easily deposit silicon at room temperature. Furthermore, heating the substrate or the precursor are not necessary.
  • EUV Extra Ultra Violet
  • multilayer or multilayer systems which function as Bragg interference mirrors, the state of the art being the use of Mo-Si layer pairs, which are repeated 40-50 times.
  • a major problem in this context is already the production of defect-free, large-area mask structures. Defects can arise, for example, as a result of contamination by particles from the air, abrasion of the handling systems or even crystal formation on the mask surface.
  • the critical defect size is less than 30 nm, which is why only super-resolution correction methods can work.
  • a high-resolution Si / MO-SI-EBID process can thus be advantageously used not only in the repair of already used masks, but also in the quality control and repair of produced masks.
  • the described method is also advantageously carried out for editing circuits. Further areas of application are application-oriented and basic-oriented research.
  • the abovementioned object is achieved according to the invention in that a polysilane is used as the precursor.
  • neopentasilane is used as the precursor.
  • the particle beam device used is a scanning electron microscope.
  • the advantages achieved by the invention are in particular that the use of a silicon-containing precursor from the class of polysilanes in an EBID / IBID process enables direct deposition of silicon with high accuracy, resolution and low contamination.
  • silicon when using neopentasilane as a precursor, which is liquid at room temperature and has a favorable vapor pressure for EBID / IBID method, silicon can be deposited with high purity and without inclusion of chlorine.
  • a guided (rasterized or continuous) and repeated movement of the particle beam across the substrate allows the precise production of two- and three-dimensional landfills.
  • FIG. 1 shows a device for deposition of silicon on a substrate with the aid of a precursor from the class of polysilanes with a particle beam device and a gas injection system in a preferred embodiment
  • Fig. 2 shows three examples of deposited between metallic contact structures Si de ponaten
  • Fig. 3 shows the temperature dependence of the electrical conductivity of a typical Help the device of FIG. 1 produced landfill.
  • the device 2 for the direct deposition of silicon shown in FIG. 1 has a particle beam device 8 which generates a beam 14 of electrons.
  • the particle beam device 8 is configured in the present embodiment as a scanning electron microscope.
  • a precursor 20 is offered or provided in a region 18 of the surface 26 of a substrate 32, in which silicon is to be deposited.
  • the precursor 20 containing silicon is decomposed by the beam 14 and the secondary processes it causes on the surface 26 of the substrate 32.
  • the precursor forms a volatile component and a solid component.
  • the solid component is the landfill 38. This should contain the highest possible proportion of silicon in order to have the best possible electrical conductivity.
  • neopentasilane (S15H12) is used in the present exemplary embodiment.
  • Neopentasilane is a carbon-free Si precursor 20 that is liquid under ambient conditions. The decomposition of the precursor results in the solid phase silicon to be deposited on the substrate 32 and the volatile hydrogen-containing phase.
  • the vapor pressure of neopentasilane is at room temperature in a favorable range for FPBI D processes. As a result, growth rates of at least 0.01 m 3 / min can be achieved.
  • the gaseous precursor SiH 2 Cl 2 has a much higher vapor pressure, so that it is to be expected that its adhesion coefficient is very low and correspondingly the growth rate is significantly lower than when using neopentasilane.
  • Typical landfills produced by device 2 consist of at least 87 at% silicon, with fractions of carbon (C) and oxygen (O) in the range of 5 to 7 at%. This can be demonstrated, for example, by the use of energy-dispersive X-ray analysis (EDX).
  • EDX energy-dispersive X-ray analysis
  • FIG. 2 shows various contact structures 50, 52, 54, 56, 58, 60 in a light micrograph, with Si deposits 38 being prepared between the contact structures 50, 52 and the contact structures 56, 58.
  • the distance A between the contact structures 50, 52 and 56, 58 is 20 pm each.
  • the temperature dependence of the electrical conductivity of a typical landfill 38 created with the apparatus of FIG. 1 is shown in FIG.
  • the multiplied by the factor 1000 inverse temperature T 1 in the unit K ⁇ 1 , on the ordinate 86 of the electrical resistance R in the unit ohm ( ⁇ ) is shown.
  • the curve 92 shows a behavior typical of amorphous silicon. In particular, localized states below the conduction band lower edge of the silicon also contribute to charge transport. This phenomenon is also referred to as trap-controlled carrier contribution. Phenomenologically, this can be modeled by a distribution of activation energies.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Inorganic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Toxicology (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Procédé pour déposer du silicium sur un substrat (32) au moyen d'un faisceau focalisé de particules (14) chargées, selon lequel un précurseur (20) contenant du silicium est préparé et dissocié par le faisceau (14) à proximité immédiate du substrat (32). L'invention vise à permettre un dépôt de silicium sur un substrat (32) de manière particulièrement efficace et précise sans abîmer le matériau. A cet effet, un polysilane est utilisé comme précurseur (20).
EP11811328.1A 2010-12-23 2011-12-23 Procédé et dispositif pour déposer du silicium sur un substrat Withdrawn EP2655685A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102010055564A DE102010055564A1 (de) 2010-12-23 2010-12-23 Verfahren und Vorrichtung zur Abscheidung von Silizium auf einem Substrat
PCT/EP2011/006543 WO2012084261A1 (fr) 2010-12-23 2011-12-23 Procédé et dispositif pour déposer du silicium sur un substrat

Publications (1)

Publication Number Publication Date
EP2655685A1 true EP2655685A1 (fr) 2013-10-30

Family

ID=45524475

Family Applications (1)

Application Number Title Priority Date Filing Date
EP11811328.1A Withdrawn EP2655685A1 (fr) 2010-12-23 2011-12-23 Procédé et dispositif pour déposer du silicium sur un substrat

Country Status (5)

Country Link
US (1) US20140295105A1 (fr)
EP (1) EP2655685A1 (fr)
JP (1) JP5883025B2 (fr)
DE (1) DE102010055564A1 (fr)
WO (1) WO2012084261A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013004116A1 (de) 2013-03-08 2014-09-11 Johann Wolfgang Goethe-Universität Verfahren zum Optimieren eines Abscheidungsprozesses, Verfahren zum Einstellen einer Depositionsanlage und Depositionsanlage
DE102013020518A1 (de) 2013-12-11 2015-06-11 Forschungszentrum Jülich GmbH Fachbereich Patente Verfahren und Vorrichtung zur Polymerisation einer Zusammensetzung enthaltend Hydridosilane und anschließenden Verwendung der Polymerisate zur Herstellung von siliziumhaltigen Schichten
DE102014223465A1 (de) * 2014-11-18 2016-05-19 Evonik Degussa Gmbh Verfahren zur Erzeugung von dotierten, polykristallinen Halbleiterschichten

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0945922A (ja) * 1995-07-27 1997-02-14 Showa Denko Kk 多結晶シリコン膜の形成方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63308910A (ja) * 1987-06-11 1988-12-16 Nikon Corp エネルギ−線照射による薄膜の製造方法及びそれに使用される装置
JPH06191821A (ja) * 1992-12-22 1994-07-12 Showa Denko Kk シリコン膜形成用の高次シラン含有溶液
JPH11349321A (ja) * 1998-06-05 1999-12-21 Osaka Gas Co Ltd 機能性珪素材料の製法
US6440615B1 (en) * 1999-02-09 2002-08-27 Nikon Corporation Method of repairing a mask with high electron scattering and low electron absorption properties
JP2000232047A (ja) * 1999-02-09 2000-08-22 Nikon Corp 散乱ステンシル型レチクルの修正方法
US20080138955A1 (en) * 2006-12-12 2008-06-12 Zhiyuan Ye Formation of epitaxial layer containing silicon
US8486191B2 (en) * 2009-04-07 2013-07-16 Asm America, Inc. Substrate reactor with adjustable injectors for mixing gases within reaction chamber
JP5442572B2 (ja) * 2010-09-28 2014-03-12 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置、薄膜作製方法、欠陥修正方法及びデバイス作製方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0945922A (ja) * 1995-07-27 1997-02-14 Showa Denko Kk 多結晶シリコン膜の形成方法

Also Published As

Publication number Publication date
DE102010055564A1 (de) 2012-06-28
JP5883025B2 (ja) 2016-03-09
US20140295105A1 (en) 2014-10-02
JP2014501216A (ja) 2014-01-20
WO2012084261A1 (fr) 2012-06-28

Similar Documents

Publication Publication Date Title
JP5676774B2 (ja) グラフェン被覆鋼板及びその製造方法
DE102016203094B4 (de) Verfahren und Vorrichtung zum dauerhaften Reparieren von Defekten fehlenden Materials einer photolithographischen Maske
DE102013203995B4 (de) Verfahren zum Schützen eines Substrats während einer Bearbeitung mit einem Teilchenstrahl
DE102007041820A1 (de) Graphitschichten
EP1727925A1 (fr) Procede et dispositif pour former de fines couches de nitrure de silicium sur des surfaces supports
DE102014114572A1 (de) EUV-Lithographiesystem und Betriebsverfahren dafür
DE102017213172A1 (de) Verfahren zum Aufbringen einer Deckschicht und reflektives optisches Element
EP3028295B1 (fr) Procédé de connexion de substrats
EP2668661A1 (fr) Procédé de collage permanent de tranches
WO2016023840A1 (fr) Élément optique réflecteur
WO2014202453A1 (fr) Formulations comprenant des hydridosilanes et des oligomères d'hydridosilane, leur procédé de préparation et leur utilisation
EP2655685A1 (fr) Procédé et dispositif pour déposer du silicium sur un substrat
DE69304819T2 (de) Verfahren zur Herstellung einer Silizium-enthaltenden Schicht auf ein metallisches Substrat sowie Anti-Korrosionsbehandlung
EP0259791A1 (fr) Procédé de fabrication de pièces d'usinage ayant une couche superficielle en carbone
DE102009001488A1 (de) Entfernen von Kontaminationen von optischen Oberflächen durch aktivierten Wasserstoff
WO2013182637A1 (fr) Procédé de formation de couches planes fermées constituées d'atomes de carbone hybridé sp2 ou de graphène sur la surface d'un substrat et substrat revêtu par ce procédé
WO2014202459A1 (fr) Formulations comprenant de l'hydrurosilane et un oligomère d'hydrurosilane, procédé pour leur production, et leur utilisation
DE3437120A1 (de) Verfahren zum herstellen von halbleiterschichten auf halbleiterkoerpern oder zur eindiffusion von stoerstellen im halbleiterkoerper
DE69626004T2 (de) Substratbehälter mit schutz gegen physisch-chemische kontamination
DE102010000983A1 (de) Plasma- bzw. ionengestützes System zur Herstellung haftfester Beschichtungen auf Fluorpolymeren
DE102019212910A1 (de) Optisches Element und EUV-Lithographiesystem
DE102022202803A1 (de) Verfahren und Vorrichtung zur Maskenreparatur
WO2016138547A1 (fr) Implanteur d'ions
WO2006027106A1 (fr) Procede de depot de couches d'oxyde de titane photocatalytiques
DE4427714C2 (de) Verfahren zum Bekeimen eines Substrats zur späteren Herstellung einer Komposit-Struktur

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20130715

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DAX Request for extension of the european patent (deleted)
17Q First examination report despatched

Effective date: 20140602

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: EXAMINATION IS IN PROGRESS

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20170701