EP2654387B1 - Printed circuit board - Google Patents

Printed circuit board Download PDF

Info

Publication number
EP2654387B1
EP2654387B1 EP13162056.9A EP13162056A EP2654387B1 EP 2654387 B1 EP2654387 B1 EP 2654387B1 EP 13162056 A EP13162056 A EP 13162056A EP 2654387 B1 EP2654387 B1 EP 2654387B1
Authority
EP
European Patent Office
Prior art keywords
layer
semiconductor package
ball electrodes
bus
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
EP13162056.9A
Other languages
German (de)
French (fr)
Other versions
EP2654387A3 (en
EP2654387A2 (en
Inventor
Hiroshi Isono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of EP2654387A2 publication Critical patent/EP2654387A2/en
Publication of EP2654387A3 publication Critical patent/EP2654387A3/en
Application granted granted Critical
Publication of EP2654387B1 publication Critical patent/EP2654387B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/18Printed circuits structurally associated with non-printed electric components
    • H05K1/181Printed circuits structurally associated with non-printed electric components associated with surface mounted components
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0213Electrical arrangements not otherwise provided for
    • H05K1/0237High frequency adaptations
    • H05K1/0243Printed circuits associated with mounted high frequency components
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657Stacked arrangements of devices
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/11Printed elements for providing electric connections to or between printed circuits
    • H05K1/115Via connections; Lands around holes or via connections
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/06548Conductive via connections through the substrate, container, or encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/06555Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1517Multilayer substrate
    • H01L2924/15172Fan-out arrangement of the internal vias
    • H01L2924/15174Fan-out arrangement of the internal vias in different layers of the multilayer substrate
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0213Electrical arrangements not otherwise provided for
    • H05K1/0216Reduction of cross-talk, noise or electromagnetic interference
    • H05K1/0228Compensation of cross-talk by a mutually correlated lay-out of printed circuit traces, e.g. for compensation of cross-talk in mounted connectors
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0213Electrical arrangements not otherwise provided for
    • H05K1/0216Reduction of cross-talk, noise or electromagnetic interference
    • H05K1/023Reduction of cross-talk, noise or electromagnetic interference using auxiliary mounted passive components or auxiliary substances
    • H05K1/0231Capacitors or dielectric substances
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0213Electrical arrangements not otherwise provided for
    • H05K1/0237High frequency adaptations
    • H05K1/025Impedance arrangements, e.g. impedance matching, reduction of parasitic impedance
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0296Conductive pattern lay-out details not covered by sub groups H05K1/02 - H05K1/0295
    • H05K1/0298Multilayer circuits
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09Shape and layout
    • H05K2201/09209Shape and layout details of conductors
    • H05K2201/09654Shape and layout details of conductors covering at least two types of conductors provided for in H05K2201/09218 - H05K2201/095
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10431Details of mounted components
    • H05K2201/10507Involving several components
    • H05K2201/10545Related components mounted on both sides of the PCB
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10621Components characterised by their electrical contacts
    • H05K2201/10734Ball grid array [BGA]; Bump grid array

Definitions

  • the present invention relates to a bus wiring formed on a printed circuit board.
  • a higher speed in operations and a higher density of wirings are demanded for a printed circuit board along with sophistication of electronics devices in recent years. For that reason, a bus wiring is frequently used in which plural signal lines through which a signal can be transmitted at a high speed are arranged in parallel.
  • the signals are transmitted by using the bus wiring from a transmission-side semiconductor package to a reception-side semiconductor package, lengths of respective wirings are set to be equal to each other. If a large difference exists in the lengths of the respective wirings, an operational timing of the reception-side semiconductor package is deviated, and noise is increased because of a difference in the timing at which the signals are reflected at connection points of the respective wirings.
  • the bus wiring is arranged by using via holes.
  • a ground layer or a power supply layer is generally formed on an inter later of the multi-layered printed wiring board, and the ground layer or the power supply layer serves as a return path for the signal flowing through the signal wiring such as the bus wiring.
  • the via holes are prepared also in the ground layer or the power supply layer in the case of the above-described multi-layered printed wiring board.
  • the bus wirings are arranged to be adjacent to each other as much as possible.
  • the via holes are also arranged to be adjacent to each other.
  • the return path for the signal is divided by the via holes. Thus, radiation noise is increased.
  • Japanese Patent Laid-Open No. 8-340161 discloses a configuration in which the via holes are prepared in a diagonal manner, or a wider interval is designed every two or four via holes in a case where the bus wirings are formed on the multi-layered printed wiring board.
  • the return path is secured by preparing the via holes in the above-described manner.
  • a semiconductor package of a ball grid array (BGA) type is used instead of a semiconductor package of the QFP type disclosed in Japanese Patent Laid-Open No. 8-340161 . Accordingly, the following configuration with regard to electrode terminals connected to the bus wirings is more frequently used. That is, the bus wirings are connected to not only the electrode terminals arranged on an outermost circumference of the semiconductor package but also the electrode terminals arranged on an inner circumference of the semiconductor package. It is therefore difficult to arrange the bus wirings at equal distances.
  • BGA ball grid array
  • the number of bus wirings is increased in the case of the multi-layered printed wiring board, the number of the via holes prepared in the ground layer or the power supply layer of the signal wirings is increased, and it is difficult to secure the return path for the signal.
  • Japanese Patent Laid-Open No. 8-340161 even when the via holes are prepared in a diagonal manner, the area for preparing the via holes is enlarged, and a degree of freedom for the board design is largely impaired. That is, if the via holes are prepared in a diagonal manner, the area for mounting electronic components such as bypass capacitors is limited, and the area for forming the other signal wirings is also limited.
  • the present invention provides a printed circuit board with which radiation noise is reduced and a high density wiring is realized by securing a return current path with respect to a signal current.
  • the present invention provides a printed circuit board as specified in claims 1 to 12.
  • the high density wiring and the high density mounting of the printed circuit board can be realized while the radiation noise is reduced by securing the return path for the signal current.
  • Fig. 1 is a cross sectional view of a multi-layered printed circuit board 100 having a four-layer structure according to a first exemplary embodiment of the present invention.
  • a first semiconductor package 1 on a transmission side is mounted on a first signal layer 102 corresponding to a first layer (first surface layer) of a printed wiring board 101
  • a second semiconductor package 2 on a reception side is mounted on a second signal layer 103 corresponding to a fourth layer (second surface layer).
  • the second layer provided between the first layer and the fourth layer is a ground layer 104
  • the third layer is a power supply layer 105.
  • a ground pattern 3 is formed on the ground layer 104
  • a power supply pattern 4 is formed on the power supply layer 105.
  • the second layer may be set as the power supply layer 105
  • the third layer may be set as the ground layer 104. The same applies when the second semiconductor package 2 is set as the transmission side, and the first semiconductor package 1 is set as the reception side.
  • the ground layer herein is a wiring layer on which a ground conductor is formed and is a conductive layer where the area of a conductor at a ground potential is relatively higher than the other wiring layer. Therefore, a wiring and a conductor plane at a power supply potential, the other signal wirings, and the like may also be provided in addition to the wiring and the conductor plane at the ground potential.
  • the number of the ground conductor layer is not limited to one, and plural ground conductor layers may also be provided.
  • the power supply layer herein is a wiring layer on which a power supply conductor is formed and is a conductive layer where the area of a conductor at a power supply potential is relatively higher than the other wiring layer. Therefore, a wiring and a conductor plane at the ground potential, the other signal wirings, and the like may also be provided in addition to the wiring and the conductor plane at the power supply potential.
  • the number of the power supply conductor layer is not limited to one, and plural power supply conductor layers may also be provided.
  • the signal layer herein is a conductive layer other than the ground layer and the power supply layer described above.
  • a front surface layer (first surface layer) and a rear surface layer (second surface layer) of the multi-layered printed circuit board are generally composed of the signal layers, but the signal layer may be provided on an inner layer.
  • the wiring and the conductor plane at the power supply potential or the ground potential may also be provided other than wirings through which the signals are transmitted.
  • the first semiconductor package 1 is mounted to the first signal layer 102 via plural ball electrodes.
  • a ball electrode group 12 is a first signal terminal group connected to a bus wiring 17 which will be described below, and a ball electrode group 13 is a second signal terminal group connected to a bus wiring 18 which will be described below.
  • a ball electrode 26 is a ground terminal and is connected to the ground pattern 3 via a via hole 22.
  • a ball electrode 27 is a power supply terminal and is connected to the power supply pattern 4 via a via hole 23.
  • a bypass capacitor 8 is provided.
  • a capacitor terminal 10 is connected to the via hole 22, and a capacitor terminal 9 is connected to the via hole 23.
  • the ball electrode group 12 is mounted to a first land group 12a formed on the first signal layer 102.
  • the ball electrode group 13 is mounted to a second land group 13a.
  • the second semiconductor package 2 is mounted to the second signal layer 103 via plural ball electrodes.
  • a ball electrode group 14 is a third signal terminal group connected to the bus wiring 17 which will be described below, and a ball electrode group 15 is a fourth signal terminal group connected to the bus wiring 18 which will be described below.
  • a ball electrode 24 is a ground terminal and is connected to the ground pattern 3 via a via hole 20.
  • a ball electrode 25 is a power supply terminal and is connected to the power supply pattern 4 via a via hole 21.
  • a bypass capacitor 5 is provided, and a capacitor terminal 6 is connected to the via hole 20, and a capacitor terminal 7 is connected to the via hole 21.
  • the ball electrode group 14 is mounted to a third land group 14a formed on the second signal layer 103.
  • the ball electrode group 15 is mounted to a fourth land group 15a.
  • the ball electrode group 12 of the first semiconductor package 1 and the ball electrode group 14 of the second semiconductor package 2 are connected to each other via a first via hole 16 and the first bus wiring 17 formed on the second signal layer 103.
  • the ball electrode group 13 of the first semiconductor package 1 and the ball electrode group 15 of the second semiconductor package 2 are connected to each other via the second bus wiring 18 formed on the first signal layer 102 and a second via hole 19.
  • a bus signal transmitted from the ball electrode group 12 to the ball electrode group 14 and a bus signal transmitted from the ball electrode group 13 to the ball electrode group 15 are the same bus signal. Therefore, a first bus wiring path defined by passing through the first via hole 16 and the first bus wiring 17 and a second bus wiring path defined by passing through the second bus wiring 18 and the second via hole 19 are one bus wiring path through which the same signal is transmitted. At this time, by setting a length and a width of the first bus wiring 17 to be equal to those of the second bus wiring 18, equal length wirings for the first bus wiring path and the second bus wiring path can be realized.
  • connection wiring illustrated in Fig. 3A which will be described below can be used.
  • the ball electrode group 12 can also be directly mounted on the first via hole 16 without using the connection wiring.
  • connection wiring illustrated in Fig. 3D which will be described below can be used.
  • the ball electrode group 15 can also be directly mounted on the second via hole 19 without using the connection wiring.
  • a length of the wiring that connects the ball electrode group 12 to the first via hole 16 is preferably equal to a length of the wiring that connects the ball electrode group 15 to the second via hole 19.
  • Figs. 2A and 2B are plan views of terminal arrangements of the first semiconductor package 1 and the second semiconductor package 2 as viewed from an arrow 11 of Fig. 1 according to the first exemplary embodiment of the present invention.
  • Fig. 2A is the plan view where only the ball electrode group 12 of the first semiconductor package 1 and the ball electrode group 13 are enlarged.
  • the ball electrode group 13 is composed of electrodes a4, b4, c4, and d4 arranged on an outermost circumference of the first semiconductor package 1 and electrodes a3, b3, c3, and d3 arranged on a second circumference from the outermost circumference which is accordingly adjacent to the outermost circumference.
  • the ball electrode group 12 is composed of electrodes a2, b2, c2, and d2 arranged on a third circumference from the outermost circumference and electrodes a1, b1, c1, and d1 arranged on a fourth circumference from the outermost circumference.
  • Fig. 2B is the plan view where only the ball electrode group 14 of the second semiconductor package 2 and the ball electrode group 15 are enlarged.
  • the ball electrode group 14 is composed of electrodes a1', b1', c1', and d1' arranged on an outermost circumference of the second semiconductor package 2 and electrodes a2', b2', c2', and d2' arranged on a second circumference from the outermost circumference which is accordingly adjacent to the outermost circumference.
  • the ball electrode group 13 is composed of electrodes a3', b3', c3', and d3' arranged on a third circumference from the outermost circumference and electrodes a4', b4', c4', and d4' arranged on a fourth circumference from the outermost circumference.
  • the electrodes a1, a2, b1, b2, c1, c2, d1, and d2 forming the ball electrode group 12 are connected to the electrodes a1', a2', b1', b2', c1', c2', d1', and d2' forming the ball electrode group 14 via the first via hole 16 and the first bus wiring 17.
  • the electrodes a3, a4, b3, b4, c3, c4, d3, and d4 forming the ball electrode group 13 are connected to the electrodes a3', a4', b3', b4', c3', c4', d3', and d4' forming the ball electrode group 15 via the second bus wiring 18 and the second via hole 19.
  • Figs. 3A, 3B, 3C, and 3D are plan views of respective layers as viewed from the arrow 11 of Fig. 1 according to the first exemplary embodiment of the present invention.
  • Fig. 3A illustrates the first signal layer 102 corresponding to the first layer (first surface layer)
  • Fig. 3B illustrates the ground pattern 3 corresponding to the second layer
  • Fig. 3C illustrates the power supply pattern 4 corresponding to the third layer
  • Fig. 3D illustrates the second signal layer 103 corresponding to the fourth layer (second surface layer).
  • a signal transmission time for the bus signal to transmit through the first bus wiring path from the ball electrode group 12 to the ball electrode group 14 is substantially equal to a signal transmission time for the bus signal to transmit through the second bus wiring path from the ball electrode group 13 to the ball electrode group 15.
  • the first via hole 16 and the second via hole 19 are both prepared in mounting areas of the first semiconductor package 1 and the second semiconductor package 2, and a degree of freedom for a board design is not impaired.
  • the state where the signal transmission times are equal to each other means that the signal from the first semiconductor package 1 to the second semiconductor package 2 via the first bus wiring path and the second bus wiring path is transmitted within a time error range in which the second semiconductor package 2 normally operates.
  • the normal time error range is preferably 5% or below of a timing budget of the transmitted signal. That is, in the case of DDR3, the normal time error range is preferably 5% or below of a half-wave length of the transmitted signal.
  • the ball electrode group 13 is arranged on the outermost circumference of the first semiconductor package 1 and the second circumference from the outermost circumference, and the ball electrode group 12 is arranged on the third circumference and the fourth circumference from the outermost circumference.
  • the present embodiment is not limited to the above, and the ball electrode group 13 may be arranged on an outer circumference side with respect to the ball electrode group 12.
  • the ball electrode group 14 is arranged on the outermost circumference of the second semiconductor package 2 and the second circumference from the outermost circumference, and the ball electrode group 15 is arranged on the third circumference and the fourth circumference from the outermost circumference.
  • the ball electrode group 14 may be arranged on an outer circumference side with respect to the ball electrode group 15. It is however noted that to set the equal transmission time for the first bus wiring path and the second bus wiring path, the ball electrode group 13 and the ball electrode group 14 as well as the ball electrode group 12 and the ball electrode group 15 are preferably arranged on the same circumferences from the outermost circumference of the semiconductor package.
  • Fig. 4 is a cross sectional view of a printed circuit board having a four-layer structure according to a second exemplary embodiment of the present invention. To simplify the description, only a part of semiconductor packages 28 and 29 which will be described below is illustrated.
  • Fig. 4 is a cross sectional view of a multi-layered printed circuit board 200 having a four-layer structure according to the second exemplary embodiment of the present invention.
  • a first semiconductor package 28 on a transmission side is mounted on a power supply layer 205 corresponding to the first layer (first surface layer) of the printed wiring board 201
  • a second semiconductor package 29 on a reception side is mounted on the ground layer 204 corresponding to the fourth layer (second surface layer).
  • a power supply pattern 30 is formed on the power supply layer 205
  • a ground pattern 31 is formed on the ground layer 204.
  • the second layer provided between the first layer and the fourth layer is a first signal layer 202
  • the third layer is a second signal layer 203.
  • the fourth layer may be set as the power supply layer 205
  • the first layer may be set as the ground layer 204.
  • the first semiconductor package 28 is mounted to the power supply layer 205 via plural ball electrodes.
  • a ball electrode group 32 is a first signal terminal group connected to a bus wiring 40
  • a ball electrode group 33 is a second signal terminal group connected to a bus wiring 41.
  • the bus wirings 40 and 41 will be described below.
  • the second semiconductor package 29 is mounted to the ground layer 204 via plural ball electrodes.
  • a ball electrode group 34 is a third signal terminal group connected to the bus wiring 40, and a ball electrode group 35 is a fourth signal terminal group connected to the bus wiring 41.
  • the ball electrode group 32 of the first semiconductor package 28 and the ball electrode group 34 of the second semiconductor package 29 are connected to each other via a first via hole 36, the first bus wiring 40 formed on the second signal layer 203, and a third via hole 38.
  • the ball electrode group 33 of the first semiconductor package 28 and the ball electrode group 35 of the second semiconductor package 29 are connected to each other via a second via hole 37, the second bus wiring 41 formed on the first signal layer 202, and a fourth via hole 39.
  • a signal transmitted from the ball electrode group 32 to the ball electrode group 34 and a signal transmitted from the ball electrode group 33 to the ball electrode group 35 are the same signal. Therefore, the first bus wiring path defined by passing through the first via hole 36, the first bus wiring 40, and the third via hole 38 and the second bus wiring path defined by passing through the second via hole 37, the second bus wiring 41, and the fourth via hole 39 are one bus wiring path through which the same signal is transmitted. At this time, by setting a length and a width of the first bus wiring 40 to be equal to those of the second bus wiring 41, the equal length wirings for the first bus wiring path and the second bus wiring path can be realized.
  • a signal transmission time for the bus signal to transmit through the first bus wiring path from the ball electrode group 32 to the ball electrode group 34 is substantially equal to the second bus wiring path through which the bus signal is transmitted from the ball electrode group 33 to the ball electrode group 35.
  • the first via hole 36, the second via hole 37, the third via hole 38, and the fourth via hole 39 are all prepared in mounting areas of the first and second semiconductor packages 28 and 29, and a degree of freedom for a board design is not impaired.
  • the prepared via holes are non-penetrating via holes instead of the penetrating via holes according to the first exemplary embodiment.
  • the structure in which no via holes exist in the return path for the transmission signal is realized by arranging the power supply pattern 30 and the ground pattern 31 on the first and second surface layers. That is, the return path of the first bus wiring path can be set as the ground pattern 31, and the return path of the second bus wiring path can be set as the power supply pattern 30. It is therefore possible to largely contribute to the suppression of the radiation noise.
  • Fig. 5 illustrates a case of a printed circuit board having a six-layer structure.
  • Fig. 5 is a cross sectional view of a multi-layered printed circuit board 300 having a six-layer structure according to a third exemplary embodiment of the present invention.
  • a first semiconductor package 42 on a transmission side is mounted on a first signal layer 302 corresponding to the first layer (first surface layer) of a printed wiring board 301
  • a second semiconductor package 43 on a reception side is mounted on a second signal layer 303 corresponding to a sixth layer (second surface layer).
  • the second layer arranged on an inner layer between the first layer and the sixth layer is the ground layer 304
  • a fifth layer is a power supply layer 305.
  • a ground pattern 44 is formed on the ground layer 304, and a power supply pattern 45 is formed on the power supply layer 305.
  • the second layer may be set as the power supply layer 305, and the fifth layer may be set as the ground layer 304.
  • the third layer is a third signal layer 306, and the fourth layer is a fourth signal layer 307.
  • the first semiconductor package 42 is mounted to the first signal layer 302 via plural ball electrodes.
  • a ball electrode group 50 is a first signal terminal group connected to a bus wiring 64
  • a ball electrode group 53 is a second signal terminal group connected to a bus wiring 67.
  • a ball electrode group 51 is a fifth signal terminal group connected to a bus wiring 65
  • a ball electrode group 52 is a seventh signal terminal group connected to a bus wiring 66.
  • the bus wirings 64, 65, 66, and 67 will be described below.
  • the ball electrode group 51 and the ball electrode group 52 are formed on an outer circumference side with respect to the ball electrode group 50 and on an inner circumference side with respect to the ball electrode group 53.
  • the second semiconductor package 43 is mounted to the second signal layer 303 via plural ball electrodes.
  • a ball electrode group 54 is a third signal terminal group connected to the bus wiring 64, and a ball electrode group 57 is a fourth signal terminal group connected to the bus wiring 67.
  • a ball electrode group 55 is a sixth signal terminal group connected to the bus wiring 65, and a ball electrode group 56 is an eighth signal terminal group connected to the bus wiring 66.
  • the ball electrode group 55 and the ball electrode group 56 are formed on an outer circumference side with respect to the ball electrode group 57 and on an inner circumference side with respect to the ball electrode group 54.
  • the ball electrode group 50 of the first semiconductor package 42 and the ball electrode group 54 of the second semiconductor package 43 are connected to each other via the first via hole 58 and the first bus wiring 64 formed on the second signal layer 303.
  • the ball electrode group 53 of the first semiconductor package 42 and the ball electrode group 57 of the second semiconductor package 43 are connected to each other via the second bus wiring 67 formed on the first signal layer 302 and a second via hole 63.
  • the ball electrode group 51 of the first semiconductor package 42 and the ball electrode group 55 of the second semiconductor package 43 are connected to each other via a third via hole 59, the third bus wiring 65 formed on the fourth signal layer 307, and a fourth via hole 61.
  • the ball electrode group 52 of the first semiconductor package 42 and the ball electrode group 56 of the second semiconductor package 43 are connected to each other via a fifth via hole 60, the fourth bus wiring 66 formed on the third signal layer 306, and a sixth via hole 62.
  • the first bus wiring 64, the second bus wiring 67, the third bus wiring 65, and the fourth bus wiring 66 it is possible to set a signal transmission time for the bus signal to transmit through the first bus wiring path from the ball electrode group 50 to the ball electrode group 54, a signal transmission time for the bus signal to transmit through the second bus wiring path from the ball electrode group 53 to the ball electrode group 57, a signal transmission time for the bus signal to transmit through the third bus wiring path from the ball electrode group 51 to the ball electrode group 55, and a signal transmission time for the bus signal to transmit through the fourth bus wiring path from the ball electrode group 52 to the ball electrode group 56 to be substantially equal to other.
  • the first via hole 58, the third via hole 59, the fifth via hole 60, the fourth via hole 61, the sixth via hole 62, and the second via hole 63 are all prepared in mounting areas of the first and second semiconductor packages 42 and 43, and a degree of freedom for a board design is not impaired.
  • the return paths for the first bus wiring path and the third bus wiring path correspond to the power supply layer 305 adjacent to each of the bus wiring paths.
  • the return paths for the second bus wiring path and the fourth bus wiring path correspond to the ground layer 304 adjacent to each of the bus wiring paths. Therefore, the return paths for the first bus wiring path and the third bus wiring path can be realized at a shortest distance. It is therefore possible to largely contribute to the suppression of the radiation noise.
  • a printed circuit board includes a first semiconductor package (1) on a first surface layer of a printed wiring board (101) and a second semiconductor package (2) on a second surface layer where a bus signal is transmitted from the first to the second semiconductor package.
  • a first bus wiring path from a signal terminal on an inner circumference side of the first semiconductor package via a via hole and the second surface layer to a signal terminal on an outer circumference side of the second semiconductor package and a second bus wiring path from a signal terminal on an outer circumference side of the first semiconductor package via the second surface layer and a via hole to a signal terminal on an inner circumference side of the second semiconductor package are provided, thus securing a return current path and realizing a high density wiring while suppressing radiation noise.

Description

    BACKGROUND OF THE INVENTION Field of the Invention
  • The present invention relates to a bus wiring formed on a printed circuit board.
  • Description of the Related Art
  • Prior art which is related to this field is described in document US 2009/0032921 A1 showing a printed wiring board structure and electronic apparatus, document US patent 6,008,534 showing an integrated circuit package having signal traces interposed between power and ground conductors in order to form stripline transmission lines, and document US patent 6,353,539 B1 showing method and apparatus for matched length routing of back-to-back package placement.
  • A higher speed in operations and a higher density of wirings are demanded for a printed circuit board along with sophistication of electronics devices in recent years. For that reason, a bus wiring is frequently used in which plural signal lines through which a signal can be transmitted at a high speed are arranged in parallel. In a case where the signals are transmitted by using the bus wiring from a transmission-side semiconductor package to a reception-side semiconductor package, lengths of respective wirings are set to be equal to each other. If a large difference exists in the lengths of the respective wirings, an operational timing of the reception-side semiconductor package is deviated, and noise is increased because of a difference in the timing at which the signals are reflected at connection points of the respective wirings.
  • In a case where the transmission-side semiconductor package is mounted on one of surfaces of a multi-layered printed wiring board and the reception-side semiconductor package is mounted on the other surface, the bus wiring is arranged by using via holes. A ground layer or a power supply layer is generally formed on an inter later of the multi-layered printed wiring board, and the ground layer or the power supply layer serves as a return path for the signal flowing through the signal wiring such as the bus wiring.
  • The via holes are prepared also in the ground layer or the power supply layer in the case of the above-described multi-layered printed wiring board. To design the printed wiring board at a high density in recent years, the bus wirings are arranged to be adjacent to each other as much as possible. For that reasons, the via holes are also arranged to be adjacent to each other. However, if the via holes prepared in the ground layer or the power supply layer are continuously arranged, the return path for the signal is divided by the via holes. Thus, radiation noise is increased.
  • Japanese Patent Laid-Open No. 8-340161 discloses a configuration in which the via holes are prepared in a diagonal manner, or a wider interval is designed every two or four via holes in a case where the bus wirings are formed on the multi-layered printed wiring board. The return path is secured by preparing the via holes in the above-described manner.
  • In recent years, a semiconductor package of a ball grid array (BGA) type is used instead of a semiconductor package of the QFP type disclosed in Japanese Patent Laid-Open No. 8-340161 . Accordingly, the following configuration with regard to electrode terminals connected to the bus wirings is more frequently used. That is, the bus wirings are connected to not only the electrode terminals arranged on an outermost circumference of the semiconductor package but also the electrode terminals arranged on an inner circumference of the semiconductor package. It is therefore difficult to arrange the bus wirings at equal distances.
  • When the number of bus wirings is increased in the case of the multi-layered printed wiring board, the number of the via holes prepared in the ground layer or the power supply layer of the signal wirings is increased, and it is difficult to secure the return path for the signal. As described in Japanese Patent Laid-Open No. 8-340161 , even when the via holes are prepared in a diagonal manner, the area for preparing the via holes is enlarged, and a degree of freedom for the board design is largely impaired. That is, if the via holes are prepared in a diagonal manner, the area for mounting electronic components such as bypass capacitors is limited, and the area for forming the other signal wirings is also limited.
  • SUMMARY OF THE INVENTION
  • The present invention provides a printed circuit board with which radiation noise is reduced and a high density wiring is realized by securing a return current path with respect to a signal current.
  • The present invention provides a printed circuit board as specified in claims 1 to 12.
  • According to the aspect of the present invention, the high density wiring and the high density mounting of the printed circuit board can be realized while the radiation noise is reduced by securing the return path for the signal current.
  • Further features of the present invention will become apparent from the following description of exemplary embodiments with reference to the attached drawings.
  • BRIEF DESCRIPTION OF THE DRAWINGS
    • Fig. 1 is a cross sectional view of a multi-layered printed circuit board according to a first exemplary embodiment.
    • Figs. 2A and 2B are plan views of terminal arrangements of semiconductor packages according to the first exemplary embodiment.
    • Figs. 3A, 3B, 3C, and 3D are plan views of respective layers of the printed circuit board according to the first exemplary embodiment.
    • Fig. 4 is a cross sectional view of a printed circuit board according to a second exemplary embodiment.
    • Fig. 5 is a cross sectional view of a printed circuit board according to a third exemplary embodiment.
    DESCRIPTION OF THE EMBODIMENTS
  • Hereinafter, embodiments of the present invention will be described with reference to the drawings.
  • First Exemplary Embodiment
  • Fig. 1 is a cross sectional view of a multi-layered printed circuit board 100 having a four-layer structure according to a first exemplary embodiment of the present invention. In the multi-layered printed circuit board 100, a first semiconductor package 1 on a transmission side is mounted on a first signal layer 102 corresponding to a first layer (first surface layer) of a printed wiring board 101, and a second semiconductor package 2 on a reception side is mounted on a second signal layer 103 corresponding to a fourth layer (second surface layer). The second layer provided between the first layer and the fourth layer is a ground layer 104, and the third layer is a power supply layer 105. A ground pattern 3 is formed on the ground layer 104, and a power supply pattern 4 is formed on the power supply layer 105. The second layer may be set as the power supply layer 105, and the third layer may be set as the ground layer 104. The same applies when the second semiconductor package 2 is set as the transmission side, and the first semiconductor package 1 is set as the reception side.
  • The ground layer herein is a wiring layer on which a ground conductor is formed and is a conductive layer where the area of a conductor at a ground potential is relatively higher than the other wiring layer. Therefore, a wiring and a conductor plane at a power supply potential, the other signal wirings, and the like may also be provided in addition to the wiring and the conductor plane at the ground potential. The number of the ground conductor layer is not limited to one, and plural ground conductor layers may also be provided.
  • The power supply layer herein is a wiring layer on which a power supply conductor is formed and is a conductive layer where the area of a conductor at a power supply potential is relatively higher than the other wiring layer. Therefore, a wiring and a conductor plane at the ground potential, the other signal wirings, and the like may also be provided in addition to the wiring and the conductor plane at the power supply potential. The number of the power supply conductor layer is not limited to one, and plural power supply conductor layers may also be provided.
  • The signal layer herein is a conductive layer other than the ground layer and the power supply layer described above. A front surface layer (first surface layer) and a rear surface layer (second surface layer) of the multi-layered printed circuit board are generally composed of the signal layers, but the signal layer may be provided on an inner layer. The wiring and the conductor plane at the power supply potential or the ground potential may also be provided other than wirings through which the signals are transmitted.
  • The first semiconductor package 1 is mounted to the first signal layer 102 via plural ball electrodes. A ball electrode group 12 is a first signal terminal group connected to a bus wiring 17 which will be described below, and a ball electrode group 13 is a second signal terminal group connected to a bus wiring 18 which will be described below. A ball electrode 26 is a ground terminal and is connected to the ground pattern 3 via a via hole 22. A ball electrode 27 is a power supply terminal and is connected to the power supply pattern 4 via a via hole 23. A bypass capacitor 8 is provided. A capacitor terminal 10 is connected to the via hole 22, and a capacitor terminal 9 is connected to the via hole 23. The ball electrode group 12 is mounted to a first land group 12a formed on the first signal layer 102. The ball electrode group 13 is mounted to a second land group 13a.
  • The second semiconductor package 2 is mounted to the second signal layer 103 via plural ball electrodes. A ball electrode group 14 is a third signal terminal group connected to the bus wiring 17 which will be described below, and a ball electrode group 15 is a fourth signal terminal group connected to the bus wiring 18 which will be described below. A ball electrode 24 is a ground terminal and is connected to the ground pattern 3 via a via hole 20. A ball electrode 25 is a power supply terminal and is connected to the power supply pattern 4 via a via hole 21. A bypass capacitor 5 is provided, and a capacitor terminal 6 is connected to the via hole 20, and a capacitor terminal 7 is connected to the via hole 21. The ball electrode group 14 is mounted to a third land group 14a formed on the second signal layer 103. The ball electrode group 15 is mounted to a fourth land group 15a.
  • The ball electrode group 12 of the first semiconductor package 1 and the ball electrode group 14 of the second semiconductor package 2 are connected to each other via a first via hole 16 and the first bus wiring 17 formed on the second signal layer 103. The ball electrode group 13 of the first semiconductor package 1 and the ball electrode group 15 of the second semiconductor package 2 are connected to each other via the second bus wiring 18 formed on the first signal layer 102 and a second via hole 19.
  • A bus signal transmitted from the ball electrode group 12 to the ball electrode group 14 and a bus signal transmitted from the ball electrode group 13 to the ball electrode group 15 are the same bus signal. Therefore, a first bus wiring path defined by passing through the first via hole 16 and the first bus wiring 17 and a second bus wiring path defined by passing through the second bus wiring 18 and the second via hole 19 are one bus wiring path through which the same signal is transmitted. At this time, by setting a length and a width of the first bus wiring 17 to be equal to those of the second bus wiring 18, equal length wirings for the first bus wiring path and the second bus wiring path can be realized.
  • For the connection between the ball electrode group 12 of the first semiconductor package 1 and the first via hole 16, a connection wiring illustrated in Fig. 3A which will be described below can be used. The ball electrode group 12 can also be directly mounted on the first via hole 16 without using the connection wiring. Similarly, for the connection between the ball electrode group 15 of the second semiconductor package 2 and the second via hole 19, a connection wiring illustrated in Fig. 3D which will be described below can be used. The ball electrode group 15 can also be directly mounted on the second via hole 19 without using the connection wiring. A length of the wiring that connects the ball electrode group 12 to the first via hole 16 is preferably equal to a length of the wiring that connects the ball electrode group 15 to the second via hole 19.
  • Figs. 2A and 2B are plan views of terminal arrangements of the first semiconductor package 1 and the second semiconductor package 2 as viewed from an arrow 11 of Fig. 1 according to the first exemplary embodiment of the present invention.
  • Fig. 2A is the plan view where only the ball electrode group 12 of the first semiconductor package 1 and the ball electrode group 13 are enlarged. In Fig. 2A, the ball electrode group 13 is composed of electrodes a4, b4, c4, and d4 arranged on an outermost circumference of the first semiconductor package 1 and electrodes a3, b3, c3, and d3 arranged on a second circumference from the outermost circumference which is accordingly adjacent to the outermost circumference. The ball electrode group 12 is composed of electrodes a2, b2, c2, and d2 arranged on a third circumference from the outermost circumference and electrodes a1, b1, c1, and d1 arranged on a fourth circumference from the outermost circumference.
  • Fig. 2B is the plan view where only the ball electrode group 14 of the second semiconductor package 2 and the ball electrode group 15 are enlarged. In Fig. 2B, the ball electrode group 14 is composed of electrodes a1', b1', c1', and d1' arranged on an outermost circumference of the second semiconductor package 2 and electrodes a2', b2', c2', and d2' arranged on a second circumference from the outermost circumference which is accordingly adjacent to the outermost circumference. The ball electrode group 13 is composed of electrodes a3', b3', c3', and d3' arranged on a third circumference from the outermost circumference and electrodes a4', b4', c4', and d4' arranged on a fourth circumference from the outermost circumference. The electrodes a1, a2, b1, b2, c1, c2, d1, and d2 forming the ball electrode group 12 are connected to the electrodes a1', a2', b1', b2', c1', c2', d1', and d2' forming the ball electrode group 14 via the first via hole 16 and the first bus wiring 17. The electrodes a3, a4, b3, b4, c3, c4, d3, and d4 forming the ball electrode group 13 are connected to the electrodes a3', a4', b3', b4', c3', c4', d3', and d4' forming the ball electrode group 15 via the second bus wiring 18 and the second via hole 19.
  • Figs. 3A, 3B, 3C, and 3D are plan views of respective layers as viewed from the arrow 11 of Fig. 1 according to the first exemplary embodiment of the present invention. Fig. 3A illustrates the first signal layer 102 corresponding to the first layer (first surface layer), Fig. 3B illustrates the ground pattern 3 corresponding to the second layer, Fig. 3C illustrates the power supply pattern 4 corresponding to the third layer, and Fig. 3D illustrates the second signal layer 103 corresponding to the fourth layer (second surface layer). To simplify the description, in Figs. 3A, 3B, 3C, and 3D, only peripheral parts of the ball electrode group 12 and the ball electrode group 13 are illustrated with regard to the first semiconductor package 1, and only peripheral parts of the ball electrode group 14 and the ball electrode group 15 are illustrated with regard to the second semiconductor package 2. Only the bus wirings 17 and 18 which are related to the embodiment of the present invention are illustrated with regard to the wirings.
  • With the above-described configuration, it is possible to set a signal transmission time for the bus signal to transmit through the first bus wiring path from the ball electrode group 12 to the ball electrode group 14 to be substantially equal to a signal transmission time for the bus signal to transmit through the second bus wiring path from the ball electrode group 13 to the ball electrode group 15. The first via hole 16 and the second via hole 19 are both prepared in mounting areas of the first semiconductor package 1 and the second semiconductor package 2, and a degree of freedom for a board design is not impaired. The state where the signal transmission times are equal to each other means that the signal from the first semiconductor package 1 to the second semiconductor package 2 via the first bus wiring path and the second bus wiring path is transmitted within a time error range in which the second semiconductor package 2 normally operates. The normal time error range is preferably 5% or below of a timing budget of the transmitted signal. That is, in the case of DDR3, the normal time error range is preferably 5% or below of a half-wave length of the transmitted signal.
  • It is possible to secure the return path at a shortest length for the signal transmitted through the first and second bus wiring paths by preparing the via holes 22 and 23 connected to the bypass capacitor 8 in the vicinity of the first via hole 16 through which the signal from the ball electrode group 12 is transmitted. It is therefore possible to largely contribute to the suppression of the radiation noise.
  • At this time, the return path is not disturbed by the via holes 20 and 21 by setting the arrangement of the ball electrodes 24 and 25 connected to the bypass capacitor 5 illustrated in Fig. 1 on an outer circumference side with respect to the ball electrode group 14. A similar effect can be obtained by setting the arrangement of the ball electrodes 26 and 27 connected to the bypass capacitor 8 on an outer circumference side with respect to the ball electrode group 13.
  • According to the present embodiment, the ball electrode group 13 is arranged on the outermost circumference of the first semiconductor package 1 and the second circumference from the outermost circumference, and the ball electrode group 12 is arranged on the third circumference and the fourth circumference from the outermost circumference. The present embodiment is not limited to the above, and the ball electrode group 13 may be arranged on an outer circumference side with respect to the ball electrode group 12. Similarly, the ball electrode group 14 is arranged on the outermost circumference of the second semiconductor package 2 and the second circumference from the outermost circumference, and the ball electrode group 15 is arranged on the third circumference and the fourth circumference from the outermost circumference. The present embodiment is not limited to the above, and the ball electrode group 14 may be arranged on an outer circumference side with respect to the ball electrode group 15. It is however noted that to set the equal transmission time for the first bus wiring path and the second bus wiring path, the ball electrode group 13 and the ball electrode group 14 as well as the ball electrode group 12 and the ball electrode group 15 are preferably arranged on the same circumferences from the outermost circumference of the semiconductor package.
  • Second Exemplary Embodiment
  • Fig. 4 is a cross sectional view of a printed circuit board having a four-layer structure according to a second exemplary embodiment of the present invention. To simplify the description, only a part of semiconductor packages 28 and 29 which will be described below is illustrated.
  • Fig. 4 is a cross sectional view of a multi-layered printed circuit board 200 having a four-layer structure according to the second exemplary embodiment of the present invention. In the multi-layered printed circuit board 200, a first semiconductor package 28 on a transmission side is mounted on a power supply layer 205 corresponding to the first layer (first surface layer) of the printed wiring board 201, and a second semiconductor package 29 on a reception side is mounted on the ground layer 204 corresponding to the fourth layer (second surface layer). A power supply pattern 30 is formed on the power supply layer 205, and a ground pattern 31 is formed on the ground layer 204. The second layer provided between the first layer and the fourth layer is a first signal layer 202, and the third layer is a second signal layer 203. The fourth layer may be set as the power supply layer 205, and the first layer may be set as the ground layer 204.
  • The first semiconductor package 28 is mounted to the power supply layer 205 via plural ball electrodes. A ball electrode group 32 is a first signal terminal group connected to a bus wiring 40, and a ball electrode group 33 is a second signal terminal group connected to a bus wiring 41. The bus wirings 40 and 41 will be described below. The second semiconductor package 29 is mounted to the ground layer 204 via plural ball electrodes. A ball electrode group 34 is a third signal terminal group connected to the bus wiring 40, and a ball electrode group 35 is a fourth signal terminal group connected to the bus wiring 41.
  • The ball electrode group 32 of the first semiconductor package 28 and the ball electrode group 34 of the second semiconductor package 29 are connected to each other via a first via hole 36, the first bus wiring 40 formed on the second signal layer 203, and a third via hole 38. The ball electrode group 33 of the first semiconductor package 28 and the ball electrode group 35 of the second semiconductor package 29 are connected to each other via a second via hole 37, the second bus wiring 41 formed on the first signal layer 202, and a fourth via hole 39.
  • A signal transmitted from the ball electrode group 32 to the ball electrode group 34 and a signal transmitted from the ball electrode group 33 to the ball electrode group 35 are the same signal. Therefore, the first bus wiring path defined by passing through the first via hole 36, the first bus wiring 40, and the third via hole 38 and the second bus wiring path defined by passing through the second via hole 37, the second bus wiring 41, and the fourth via hole 39 are one bus wiring path through which the same signal is transmitted. At this time, by setting a length and a width of the first bus wiring 40 to be equal to those of the second bus wiring 41, the equal length wirings for the first bus wiring path and the second bus wiring path can be realized.
  • With the above-described configuration, it is possible to set a signal transmission time for the bus signal to transmit through the first bus wiring path from the ball electrode group 32 to the ball electrode group 34 to be substantially equal to the second bus wiring path through which the bus signal is transmitted from the ball electrode group 33 to the ball electrode group 35. The first via hole 36, the second via hole 37, the third via hole 38, and the fourth via hole 39 are all prepared in mounting areas of the first and second semiconductor packages 28 and 29, and a degree of freedom for a board design is not impaired.
  • The prepared via holes are non-penetrating via holes instead of the penetrating via holes according to the first exemplary embodiment. The structure in which no via holes exist in the return path for the transmission signal is realized by arranging the power supply pattern 30 and the ground pattern 31 on the first and second surface layers. That is, the return path of the first bus wiring path can be set as the ground pattern 31, and the return path of the second bus wiring path can be set as the power supply pattern 30. It is therefore possible to largely contribute to the suppression of the radiation noise. Third Exemplary Embodiment
  • The printed circuit board having the four-layer structure has been described according to the first and second exemplary embodiments. However, the embodiment of the present invention is not limited to the above and can be applied to a multi-layered printed circuit board having four or more layers. Fig. 5 illustrates a case of a printed circuit board having a six-layer structure.
  • Fig. 5 is a cross sectional view of a multi-layered printed circuit board 300 having a six-layer structure according to a third exemplary embodiment of the present invention. In the multi-layered printed circuit board 300, a first semiconductor package 42 on a transmission side is mounted on a first signal layer 302 corresponding to the first layer (first surface layer) of a printed wiring board 301, and a second semiconductor package 43 on a reception side is mounted on a second signal layer 303 corresponding to a sixth layer (second surface layer). The second layer arranged on an inner layer between the first layer and the sixth layer is the ground layer 304, and a fifth layer is a power supply layer 305. A ground pattern 44 is formed on the ground layer 304, and a power supply pattern 45 is formed on the power supply layer 305. The second layer may be set as the power supply layer 305, and the fifth layer may be set as the ground layer 304. The third layer is a third signal layer 306, and the fourth layer is a fourth signal layer 307.
  • The first semiconductor package 42 is mounted to the first signal layer 302 via plural ball electrodes. A ball electrode group 50 is a first signal terminal group connected to a bus wiring 64, and a ball electrode group 53 is a second signal terminal group connected to a bus wiring 67. A ball electrode group 51 is a fifth signal terminal group connected to a bus wiring 65, and a ball electrode group 52 is a seventh signal terminal group connected to a bus wiring 66. The bus wirings 64, 65, 66, and 67 will be described below. In the first semiconductor package 42, the ball electrode group 51 and the ball electrode group 52 are formed on an outer circumference side with respect to the ball electrode group 50 and on an inner circumference side with respect to the ball electrode group 53.
  • The second semiconductor package 43 is mounted to the second signal layer 303 via plural ball electrodes. A ball electrode group 54 is a third signal terminal group connected to the bus wiring 64, and a ball electrode group 57 is a fourth signal terminal group connected to the bus wiring 67. A ball electrode group 55 is a sixth signal terminal group connected to the bus wiring 65, and a ball electrode group 56 is an eighth signal terminal group connected to the bus wiring 66. In the second semiconductor package 43, the ball electrode group 55 and the ball electrode group 56 are formed on an outer circumference side with respect to the ball electrode group 57 and on an inner circumference side with respect to the ball electrode group 54.
  • The ball electrode group 50 of the first semiconductor package 42 and the ball electrode group 54 of the second semiconductor package 43 are connected to each other via the first via hole 58 and the first bus wiring 64 formed on the second signal layer 303. The ball electrode group 53 of the first semiconductor package 42 and the ball electrode group 57 of the second semiconductor package 43 are connected to each other via the second bus wiring 67 formed on the first signal layer 302 and a second via hole 63. The ball electrode group 51 of the first semiconductor package 42 and the ball electrode group 55 of the second semiconductor package 43 are connected to each other via a third via hole 59, the third bus wiring 65 formed on the fourth signal layer 307, and a fourth via hole 61. The ball electrode group 52 of the first semiconductor package 42 and the ball electrode group 56 of the second semiconductor package 43 are connected to each other via a fifth via hole 60, the fourth bus wiring 66 formed on the third signal layer 306, and a sixth via hole 62.
  • At this time, by setting lengths and widths of the first bus wiring 64, the second bus wiring 67, the third bus wiring 65, and the fourth bus wiring 66 to be equal to each other, it is possible to set a signal transmission time for the bus signal to transmit through the first bus wiring path from the ball electrode group 50 to the ball electrode group 54, a signal transmission time for the bus signal to transmit through the second bus wiring path from the ball electrode group 53 to the ball electrode group 57, a signal transmission time for the bus signal to transmit through the third bus wiring path from the ball electrode group 51 to the ball electrode group 55, and a signal transmission time for the bus signal to transmit through the fourth bus wiring path from the ball electrode group 52 to the ball electrode group 56 to be substantially equal to other. The first via hole 58, the third via hole 59, the fifth via hole 60, the fourth via hole 61, the sixth via hole 62, and the second via hole 63 are all prepared in mounting areas of the first and second semiconductor packages 42 and 43, and a degree of freedom for a board design is not impaired.
  • The return paths for the first bus wiring path and the third bus wiring path correspond to the power supply layer 305 adjacent to each of the bus wiring paths. The return paths for the second bus wiring path and the fourth bus wiring path correspond to the ground layer 304 adjacent to each of the bus wiring paths. Therefore, the return paths for the first bus wiring path and the third bus wiring path can be realized at a shortest distance. It is therefore possible to largely contribute to the suppression of the radiation noise.
  • While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. The scope of protection is defined by the following claims.
  • A printed circuit board includes a first semiconductor package (1) on a first surface layer of a printed wiring board (101) and a second semiconductor package (2) on a second surface layer where a bus signal is transmitted from the first to the second semiconductor package. A first bus wiring path from a signal terminal on an inner circumference side of the first semiconductor package via a via hole and the second surface layer to a signal terminal on an outer circumference side of the second semiconductor package and a second bus wiring path from a signal terminal on an outer circumference side of the first semiconductor package via the second surface layer and a via hole to a signal terminal on an inner circumference side of the second semiconductor package are provided, thus securing a return current path and realizing a high density wiring while suppressing radiation noise.

Claims (12)

  1. A printed circuit board (100, 200, 300) comprising:
    a first semiconductor package (1, 28, 42) including a first plurality of ball electrodes (12, 32, 50) and a second plurality of ball electrodes (13, 33, 53);
    a second semiconductor package (2, 29, 43) including a third plurality of ball electrodes (14, 34, 54) and a fourth plurality of ball electrodes (15, 35, 57) and transmitting a bus signal to the first semiconductor package (1, 28, 42);
    a printed wiring board (101, 201, 301) in which the first semiconductor package (1, 28, 42) is mounted on a first surface layer (102, 205, 302) via the first and second pluralities of ball electrodes (12, 32, 50, 13, 33, 53) and the second semiconductor package (2, 29, 43) is mounted on a second surface layer (103, 204, 303) via the third and fourth pluralities of ball electrodes (14, 34, 54, 15, 35, 57);
    a plurality of first bus wirings (17, 40, 64) formed on a second signal layer (103, 203, 303) of the printed wiring board (101, 201, 301), the plurality of first bus wirings (17, 40, 64) being connected to a plurality of first via holes (16, 36, 58), which is prepared in mounting area of the first semiconductor package (1, 28, 42); and
    a plurality of second bus wirings (18, 41, 67) formed on a first signal layer (102, 202, 302) of the printed wiring board (101, 201, 301), the plurality of second bus wirings (18, 41, 67) being connected to a plurality of second via holes (19, 39, 63), which is prepared in mounting area of the second semiconductor package (2, 29, 43),
    wherein the first plurality of ball electrodes (12, 32, 50) of the first semiconductor package (1, 28, 42) is connected to the third plurality of ball electrodes (14, 34, 54) of the second semiconductor package (2, 29, 43) via the plurality of first via holes (16, 36, 58) and the plurality of first bus wirings (17, 40, 64),
    wherein the second plurality of ball electrodes (13, 33, 53) of the first semiconductor package (1, 28, 42) is connected to the fourth plurality of ball electrodes (15, 35, 57) of the second semiconductor package (2, 29, 43) via the plurality of second bus wirings (18, 41, 67) and the plurality of second via holes (19, 39, 63), characterized in that
    the second plurality of ball electrodes (13, 33, 53) is arranged on an outer circumference side of the first semiconductor package (1, 28, 42) with respect to the first plurality of ball electrodes (12, 32, 50), which is closer to the second semiconductor package (2, 29, 43), and
    the fourth plurality of ball electrodes (15, 35, 57) is arranged on an inner circumference side of the second semiconductor package (2, 29, 43) with respect to the third plurality of ball electrodes (14, 34, 54), which is farther away from the first semiconductor package (1, 28, 42).
  2. The printed circuit board (100, 300) according to Claim 1,
    wherein the first bus wiring (17, 64) is formed on the second surface layer (103, 303) of the printed wiring board (100, 300), and the second bus wiring (18, 67) is formed on the first surface layer (102, 302) of the printed wiring board (100, 300).
  3. The printed circuit board (100, 300) according to Claim 1 or 2,
    wherein at least a part of the second plurality of ball electrodes (13, 53) is arranged on an outermost circumference of the first semiconductor package (1, 42), and at least a part of the third plurality of ball electrodes (14, 54) is arranged on an outermost circumference of the second semiconductor package (2, 43).
  4. The printed circuit board (100, 200, 300) according to any one of Claims 1 to 3,
    wherein a length of the first via hole (16, 36, 58) is equal to a length of the second via hole (19, 39, 63), and a length of the first bus wiring (17, 40, 64) is equal to a length of the second bus wiring (18, 41, 67).
  5. The printed circuit board (100, 300) according to Claim 1 or 2, wherein a power supply layer (105, 305) and a ground layer (104, 304) are formed on an inner layer of the printed wiring board (101, 301), a power supply terminal (25, 27) connected to a power supply pattern (4, 45) formed on the power supply layer (105, 305) or a ground terminal (24, 26) connected to a ground pattern (3, 44) formed on the ground layer (104, 304) is provided in the first semiconductor package (1, 42) to be adjacent to the first plurality of ball electrodes (12, 50) or the second plurality of ball electrodes (13, 53), and a bypass capacitor (5, 8) is connected to the power supply terminal (25, 27) or the ground terminal (24, 26).
  6. The printed circuit board (100, 300) according to Claim 5,
    wherein the power supply terminal (25, 27) connected to the power supply pattern (4, 45) formed on the power supply layer (105, 305) or the ground terminal (24, 26) connected to the ground pattern (3, 44) formed on the ground layer (104, 304) is provided in the second semiconductor package (2, 43) to be adjacent to the third plurality of ball electrodes (14, 54) or the fourth plurality of ball electrodes (15, 57), and a bypass capacitor (5, 8) is connected to the power supply terminal (258, 27) or the ground terminal (24, 26).
  7. The printed circuit board (200) according to Claim 1,
    wherein the first bus wiring (40) is formed on a second signal layer (203) provided on an inner layer which is different from the first surface layer (205) and the second surface layer (204), and the second bus wiring (41) is formed on a first signal layer (202) provided on an inner layer which is different from the first surface layer (205) and the second surface layer (204) to be closer to the first surface layer (205) than the second signal layer (203).
  8. The printed circuit board (200) according to Claim 7,
    wherein at least a part of the second plurality of ball electrodes (33) is arranged on an outermost circumference of the first semiconductor package (28), and at least a part of the third plurality of ball electrodes (34) is arranged on an outermost circumference of the second semiconductor package (29).
  9. The printed circuit board (200) according to Claim 7,
    wherein a length of the first bus wiring (40) is equal to a length of the second bus wiring (41).
  10. The printed circuit board (300) according to Claim 6,
    wherein a fourth signal layer (307) is provided between the first signal layer (302) and the second signal layer (303), a third bus wiring (65) is formed on the fourth signal layer (307), the third bus wiring (65) is connected to a fifth plurality of ball electrodes (51) provided in the first semiconductor package (42) and a sixth plurality of ball electrodes (55) provided in the second semiconductor package (43), the fifth plurality of ball electrodes (51) is a plurality of ball electrodes arranged on an outer circumference side with respect to the first plurality of ball electrodes (50) and on an inner circumference side with respect to the second plurality of ball electrodes (53) in the first semiconductor package (42), and the sixth plurality of ball electrodes (55) is a plurality of ball electrodes arranged on an outer circumference side with respect to the fourth plurality of ball electrodes (57) and on an inner circumference side with respect to the third plurality of ball electrodes (54) in the second semiconductor package (43).
  11. The printed circuit board (300) according to Claim 10,
    wherein a length of the first bus wiring (64), a length of the second bus wiring (67), and a length of the third bus wiring (65) are equal to each other.
  12. The printed circuit board (300) according to Claim 10,
    wherein a power supply terminal (25, 27) or a ground terminal (24, 26) is provided between the first signal layer (302) and the third signal layer (306) and between the second signal layer (303) and the third signal layer (306).
EP13162056.9A 2012-04-19 2013-04-03 Printed circuit board Active EP2654387B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012096100A JP6452270B2 (en) 2012-04-19 2012-04-19 Printed circuit boards and electronic equipment

Publications (3)

Publication Number Publication Date
EP2654387A2 EP2654387A2 (en) 2013-10-23
EP2654387A3 EP2654387A3 (en) 2017-07-19
EP2654387B1 true EP2654387B1 (en) 2021-08-11

Family

ID=48013865

Family Applications (1)

Application Number Title Priority Date Filing Date
EP13162056.9A Active EP2654387B1 (en) 2012-04-19 2013-04-03 Printed circuit board

Country Status (4)

Country Link
US (2) US9185804B2 (en)
EP (1) EP2654387B1 (en)
JP (1) JP6452270B2 (en)
CN (1) CN103379737B (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140162568A1 (en) * 2012-12-07 2014-06-12 Anayas360.Com, Llc On-chip calibration and built-in-self-test for soc millimeter-wave integrated digital radio and modem
EP2869339B1 (en) * 2013-10-31 2016-07-27 Ampleon Netherlands B.V. Transistor arrangement
US10701800B2 (en) 2016-01-28 2020-06-30 Hewlett Packard Enterprise Development Lp Printed circuit boards
CN108463048B (en) * 2017-02-21 2022-04-15 拉碧斯半导体株式会社 Substrate circuit device
US10074919B1 (en) * 2017-06-16 2018-09-11 Intel Corporation Board integrated interconnect
KR102420586B1 (en) * 2017-07-24 2022-07-13 삼성전자주식회사 Semiconductor devices, semiconductor packages, and method of manufacturing the Semiconductor devices
WO2019075224A1 (en) * 2017-10-11 2019-04-18 Nucleus Scientific, Inc. Modular bus systems for electric vehicles
CN108925035A (en) * 2018-08-01 2018-11-30 郑州云海信息技术有限公司 A kind of printed circuit board encapsulation design method and system based on 0402 encapsulation
US11234325B2 (en) * 2019-06-20 2022-01-25 Infinera Corporation Printed circuit board having a differential pair routing topology with negative plane routing and impedance correction structures
JP2021034536A (en) * 2019-08-23 2021-03-01 日本特殊陶業株式会社 Wiring board
JP7235708B2 (en) * 2020-10-14 2023-03-08 矢崎総業株式会社 Method for manufacturing thermally conductive sheet
DE102021202801B4 (en) * 2021-03-23 2022-10-13 Hanon Systems Efp Deutschland Gmbh Circuit with a printed circuit board and vehicle with at least one such circuit

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08340161A (en) 1995-06-13 1996-12-24 Canon Inc Bus on printed-wiring board
US5763947A (en) * 1996-01-31 1998-06-09 International Business Machines Corporation Integrated circuit chip package having configurable contacts and a removable connector
US5898217A (en) * 1998-01-05 1999-04-27 Motorola, Inc. Semiconductor device including a substrate having clustered interconnects
US6008534A (en) * 1998-01-14 1999-12-28 Lsi Logic Corporation Integrated circuit package having signal traces interposed between power and ground conductors in order to form stripline transmission lines
JP3495917B2 (en) * 1998-07-15 2004-02-09 日本特殊陶業株式会社 Multilayer wiring board
US6353539B1 (en) * 1998-07-21 2002-03-05 Intel Corporation Method and apparatus for matched length routing of back-to-back package placement
JP2000323645A (en) 1999-05-11 2000-11-24 Shinko Electric Ind Co Ltd Semiconductor device and manufacture thereof
JP2001035966A (en) 2000-01-01 2001-02-09 Ngk Spark Plug Co Ltd Wiring board and relay board
KR100455890B1 (en) * 2002-12-24 2004-11-06 삼성전기주식회사 A printed circuit board with embedded capacitors, and a manufacturing process thereof
JP4137659B2 (en) 2003-02-13 2008-08-20 新光電気工業株式会社 Electronic component mounting structure and manufacturing method thereof
JP2005191355A (en) * 2003-12-26 2005-07-14 Toshiba Corp Module substrate
KR20070015210A (en) * 2004-05-15 2007-02-01 씨-코어 테크놀로지즈, 인코포레이티드 Printed wiring board with conductive constraining core including resin filled channels
CN100367491C (en) 2004-05-28 2008-02-06 日本特殊陶业株式会社 Intermediate substrate
JP4273098B2 (en) * 2004-09-07 2009-06-03 キヤノン株式会社 Multilayer printed circuit board
DE102005033254B4 (en) * 2005-07-15 2008-03-27 Qimonda Ag Method for producing a silicon chip carrier substrate with continuous contacts
DE102005037040A1 (en) * 2005-08-05 2007-02-08 Epcos Ag Electrical component
JP2008109094A (en) * 2006-09-29 2008-05-08 Sanyo Electric Co Ltd Element-mounting board and semiconductor module
JP4978269B2 (en) * 2007-03-27 2012-07-18 日本電気株式会社 Multilayer wiring board
JP2009038112A (en) * 2007-07-31 2009-02-19 Toshiba Corp Printed wiring board structure and electronic equipment
CN101960934B (en) * 2008-03-28 2013-01-23 日本电气株式会社 Multilayer printed wiring board
JP2010010482A (en) * 2008-06-27 2010-01-14 Canon Inc Differential transmission circuit
CN101631425B (en) * 2008-07-15 2012-08-29 鸿富锦精密工业(深圳)有限公司 Circuit board and coexistence wiring method thereof
US8488329B2 (en) * 2010-05-10 2013-07-16 International Business Machines Corporation Power and ground vias for power distribution systems
CN102348323A (en) * 2010-08-02 2012-02-08 鸿富锦精密工业(深圳)有限公司 Circuit board

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
None *

Also Published As

Publication number Publication date
CN103379737A (en) 2013-10-30
EP2654387A3 (en) 2017-07-19
JP2013225544A (en) 2013-10-31
US20160007466A1 (en) 2016-01-07
US9185804B2 (en) 2015-11-10
JP6452270B2 (en) 2019-01-16
EP2654387A2 (en) 2013-10-23
US20130279135A1 (en) 2013-10-24
CN103379737B (en) 2016-03-02
US9345140B2 (en) 2016-05-17

Similar Documents

Publication Publication Date Title
EP2654387B1 (en) Printed circuit board
KR101385167B1 (en) Printed circuit board
US6621012B2 (en) Insertion of electrical component within a via of a printed circuit board
US9674941B2 (en) Printed circuit board for mobile platforms
US8013427B2 (en) Wiring board and electrical signal transmission system
US20170194076A1 (en) Transmission line and flat cable
US20120247825A1 (en) Printed circuit board
US9549459B2 (en) Multilayer printed circuit board
KR20100019342A (en) Printed wiring board
EP2785155B1 (en) Circuit board and electronic device
JP6140989B2 (en) Multilayer substrate, circuit board, information processing device, sensor device, and communication device
TWI572256B (en) Circuit board and electronic assembely
JP2008153542A (en) Multilayer wiring board
JP2004153626A (en) Center tap terminating circuit, and printed circuit board therewith
JP6946776B2 (en) Circuit board
US20110011634A1 (en) Circuit package with integrated direct-current (dc) blocking capacitor
JP2010093018A (en) Wiring board
US10057977B2 (en) Wiring board and electronic device
JP2010062180A (en) Multilayer printed wiring board
JP2007329282A (en) Multilayer circuit board
JP7439719B2 (en) Multichip module and electronic control unit
JP2013115110A (en) Printed wiring board of step structure
JP6288910B2 (en) Multilayer substrate, circuit board, information processing device, sensor device, and communication device
KR100632733B1 (en) Printed Circuit Board
JP2004063941A (en) Printed circuit board of electronic apparatus

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

AX Request for extension of the european patent

Extension state: BA ME

PUAL Search report despatched

Free format text: ORIGINAL CODE: 0009013

AK Designated contracting states

Kind code of ref document: A3

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

AX Request for extension of the european patent

Extension state: BA ME

RIC1 Information provided on ipc code assigned before grant

Ipc: H05K 1/02 20060101AFI20170612BHEP

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE

17P Request for examination filed

Effective date: 20180119

RBV Designated contracting states (corrected)

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: EXAMINATION IS IN PROGRESS

17Q First examination report despatched

Effective date: 20181015

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: EXAMINATION IS IN PROGRESS

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: GRANT OF PATENT IS INTENDED

INTG Intention to grant announced

Effective date: 20210224

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE PATENT HAS BEEN GRANTED

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

REG Reference to a national code

Ref country code: GB

Ref legal event code: FG4D

REG Reference to a national code

Ref country code: CH

Ref legal event code: EP

REG Reference to a national code

Ref country code: DE

Ref legal event code: R096

Ref document number: 602013078724

Country of ref document: DE

REG Reference to a national code

Ref country code: IE

Ref legal event code: FG4D

Ref country code: AT

Ref legal event code: REF

Ref document number: 1420753

Country of ref document: AT

Kind code of ref document: T

Effective date: 20210915

REG Reference to a national code

Ref country code: LT

Ref legal event code: MG9D

REG Reference to a national code

Ref country code: NL

Ref legal event code: MP

Effective date: 20210811

REG Reference to a national code

Ref country code: AT

Ref legal event code: MK05

Ref document number: 1420753

Country of ref document: AT

Kind code of ref document: T

Effective date: 20210811

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: AT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20210811

Ref country code: BG

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20211111

Ref country code: LT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20210811

Ref country code: NO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20211111

Ref country code: PT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20211213

Ref country code: RS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20210811

Ref country code: ES

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20210811

Ref country code: FI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20210811

Ref country code: SE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20210811

Ref country code: HR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20210811

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: PL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20210811

Ref country code: LV

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20210811

Ref country code: GR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20211112

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: NL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20210811

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20210811

REG Reference to a national code

Ref country code: DE

Ref legal event code: R097

Ref document number: 602013078724

Country of ref document: DE

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SM

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20210811

Ref country code: SK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20210811

Ref country code: RO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20210811

Ref country code: EE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20210811

Ref country code: CZ

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20210811

Ref country code: AL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20210811

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed

Effective date: 20220512

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20210811

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20210811

REG Reference to a national code

Ref country code: CH

Ref legal event code: PL

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 20220403

REG Reference to a national code

Ref country code: BE

Ref legal event code: MM

Effective date: 20220430

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MC

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20210811

Ref country code: LU

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20220403

Ref country code: LI

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20220430

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20220403

Ref country code: FR

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20220430

Ref country code: CH

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20220430

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: BE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20220430

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20220403

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20230321

Year of fee payment: 11

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: HU

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT; INVALID AB INITIO

Effective date: 20130403