EP2630277A1 - Verfahren zur herstellung eines iii-nitrid-kristalls mit niedriger versetzungsdichte - Google Patents

Verfahren zur herstellung eines iii-nitrid-kristalls mit niedriger versetzungsdichte

Info

Publication number
EP2630277A1
EP2630277A1 EP11772973.1A EP11772973A EP2630277A1 EP 2630277 A1 EP2630277 A1 EP 2630277A1 EP 11772973 A EP11772973 A EP 11772973A EP 2630277 A1 EP2630277 A1 EP 2630277A1
Authority
EP
European Patent Office
Prior art keywords
layer
nitride
ill
pits
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP11772973.1A
Other languages
English (en)
French (fr)
Inventor
Bernd Meyer
Vladimir Nikolaev
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Perfect Crystals LLC
Original Assignee
Kewar Holdings SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kewar Holdings SA filed Critical Kewar Holdings SA
Publication of EP2630277A1 publication Critical patent/EP2630277A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/04—Pattern deposit, e.g. by using masks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Surface Treatment Of Glass (AREA)
EP11772973.1A 2010-10-21 2011-10-20 Verfahren zur herstellung eines iii-nitrid-kristalls mit niedriger versetzungsdichte Withdrawn EP2630277A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US40539310P 2010-10-21 2010-10-21
PCT/EP2011/068337 WO2012052513A1 (en) 2010-10-21 2011-10-20 Method for producing a low dislocation density iii-nitride crystal

Publications (1)

Publication Number Publication Date
EP2630277A1 true EP2630277A1 (de) 2013-08-28

Family

ID=44936248

Family Applications (1)

Application Number Title Priority Date Filing Date
EP11772973.1A Withdrawn EP2630277A1 (de) 2010-10-21 2011-10-20 Verfahren zur herstellung eines iii-nitrid-kristalls mit niedriger versetzungsdichte

Country Status (3)

Country Link
EP (1) EP2630277A1 (de)
RU (1) RU2013122654A (de)
WO (1) WO2012052513A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3048547A1 (fr) * 2016-03-04 2017-09-08 Saint-Gobain Lumilog Procede de fabrication d'un substrat semi-conducteur

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103165434A (zh) * 2013-01-28 2013-06-19 华中科技大学 一种利用H2腐蚀和SiNx掩埋提高AlGaN材料质量的方法
JP6315665B2 (ja) * 2014-02-19 2018-04-25 古河機械金属株式会社 Ｉｉｉ族窒化物半導体層およびｉｉｉ族窒化物半導体基板の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6447604B1 (en) * 2000-03-13 2002-09-10 Advanced Technology Materials, Inc. Method for achieving improved epitaxy quality (surface texture and defect density) on free-standing (aluminum, indium, gallium) nitride ((al,in,ga)n) substrates for opto-electronic and electronic devices
JP3988018B2 (ja) * 2001-01-18 2007-10-10 ソニー株式会社 結晶膜、結晶基板および半導体装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO2012052513A1 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3048547A1 (fr) * 2016-03-04 2017-09-08 Saint-Gobain Lumilog Procede de fabrication d'un substrat semi-conducteur

Also Published As

Publication number Publication date
RU2013122654A (ru) 2014-11-27
WO2012052513A1 (en) 2012-04-26

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