WO2012052513A1 - Method for producing a low dislocation density iii-nitride crystal - Google Patents
Method for producing a low dislocation density iii-nitride crystal Download PDFInfo
- Publication number
- WO2012052513A1 WO2012052513A1 PCT/EP2011/068337 EP2011068337W WO2012052513A1 WO 2012052513 A1 WO2012052513 A1 WO 2012052513A1 EP 2011068337 W EP2011068337 W EP 2011068337W WO 2012052513 A1 WO2012052513 A1 WO 2012052513A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- nitride
- ill
- pits
- etching
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/04—Pattern deposit, e.g. by using masks
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
Definitions
- the present invention provides methods for reducing dislocation density in Ill-nitride crystals.
- Ill-nitride crystals and epitaxial layers produced by conventional growth techniques have high density of threading dislocations in the typically range of 10 8 -
- ELO epitaxial lateral overgrowth
- the present invention provides methods to address the- se issues.
- the present invention relates to methods for manufac- turing Ill-nitride crystals which include (a) growth of a first Ill-nitride layer on a base substrate; (b) roughening of the first layer such that pits are formed at the locations of the threading dislocations; (c) selective masking of the pits using a self-aligned masking process; (d) deposition of a second III- nitride layer such that growth starts at the openings in the mask layer and then continues laterally over the masked areas. After steps (b) and (c) the majority of threading dislocations in the first layer are pro ⁇ vided to be covered with the mask material. Conse- quently, dislocations are stopped from propagating in ⁇ to the second Ill-nitride layer. As a result, a low dislocation Ill-nitride crystal is produced.
- FIGURE 1 is a schematic cross-sectional view of the Ill-nitride crystal growth process according to the embodiments of the invention.
- FIGURE 2 is a flowchart illustrating steps in self- aligned masking process according to the first embodi- ment of the invention.
- FIGURE 3 is a flowchart illustrating steps in self- aligned masking process according to the second embod ⁇ iment of the invention.
- FIGURE 4 is a flowchart illustrating steps in self- aligned masking process according to the third embodi ⁇ ment of the invention.
- FIGURE 1 discloses a sche- matic cross-sectional view of the Ill-nitride crystal growth process according to the embodiments of the in ⁇ vention.
- Ill-nitride film 202 is grown on the substrate 201 using conventional methods. Such films have high density of dislocations 203.
- Pits 204 are formed at the locations of the dislocations.
- Pits can be formed by one of the following methods: changing the growth conditions to favor three-dimensional growth and formation of inverted pyramids, in situ chemical etching, ex situ chemical etching.
- In situ chemical etching can be achieved by introducing a reactive gas (e.g. 3 ⁇ 4, HC1, CI 2 ) into the growth chamber at high temperature.
- a reactive gas e.g. 3 ⁇ 4, HC1, CI 2
- FIG. 2 illustrates self-aligned masking process ac ⁇ cording to the first embodiment of the invention.
- a masking layer 303 e.g. SiN x , S1O 2 , TiN etc
- Ill-nitride layer 301 with pits 302 aligned to dislocations.
- the deposition technique is Chemical Vapor Deposition (CVD) or Plasma Enhanced Chemical Vapor Deposition (PECVD) or similar method providing isotropic coverage of the III nitride layer surface.
- a second masking layer 304 is formed.
- the second masking layer is a resin (e.g. polyimide or resist) deposited by spinning.
- the second masking layer planarises the surface by filling in the pits. Consequently the second masking layer is partially removed by etching (e.g. by Reactive Ion Etching (RIE) or Inductively Coupled Plasma (ICP) etching) .
- etching e.g. by Reactive Ion Etching (RIE) or Inductively Coupled Plasma (ICP) etching
- FIG. 3 illustrates self-aligned masking process ac ⁇ cording to the second embodiment of the invention.
- a layer of spin-on glass (SOG) 403 is deposited onto the Ill-nitride layer 401 with pits 402 aligned to dislocations.
- the spin-on glass is applied as liq- uid by spinning followed by curing to form a solid glass-like coating.
- This SOG layer fills in the pits and planarises the surface.
- the SOG layer is etched to remove it over the whole area except the pits. As a result, the Ill-nitride film with selec- tively masked dislocations is formed.
- Figure 4 illustrates self-aligned masking process ac ⁇ cording to the third embodiment of the invention.
- a masking layer 503 e.g. SiN x , S1O 2 , TiN etc
- the deposition technique is Chemical Vapor Deposition (CVD) or Plasma Enhanced Chemical Vapor Deposition (PECVD) or similar method providing isotropic coverage of the III nitride layer surface.
- CVD Chemical Vapor Deposition
- PECVD Plasma Enhanced Chemical Vapor Deposition
- the masking layer is etched by Ion Beam Etching or Ion Beam Sputtering or Ion Milling or similar highly directional etching technique at grazing incidence angle 504.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Surface Treatment Of Glass (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
RU2013122654/05A RU2013122654A (en) | 2010-10-21 | 2011-10-20 | METHOD FOR PRODUCING NITRIDE CRYSTAL III GROUP WITH A LOW DENSITY OF DISLOCATIONS |
EP11772973.1A EP2630277A1 (en) | 2010-10-21 | 2011-10-20 | Method for producing a low dislocation density iii-nitride crystal |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US40539310P | 2010-10-21 | 2010-10-21 | |
US61/405,393 | 2010-10-21 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2012052513A1 true WO2012052513A1 (en) | 2012-04-26 |
Family
ID=44936248
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2011/068337 WO2012052513A1 (en) | 2010-10-21 | 2011-10-20 | Method for producing a low dislocation density iii-nitride crystal |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP2630277A1 (en) |
RU (1) | RU2013122654A (en) |
WO (1) | WO2012052513A1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103165434A (en) * | 2013-01-28 | 2013-06-19 | 华中科技大学 | Method using H2 corrosion and SiNx burying to improve quality of AlGaN material |
JP2015151330A (en) * | 2014-02-19 | 2015-08-24 | 古河機械金属株式会社 | Production method for group-iii nitride semiconductor layer and group-iii nitride semiconductor substrate |
WO2017149079A1 (en) * | 2016-03-04 | 2017-09-08 | Saint-Gobain Lumilog | Method for fabricating a semiconductor substrate |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002001608A2 (en) * | 2000-06-28 | 2002-01-03 | Advanced Technology Materials, Inc. | METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((Al,In,Ga)N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRONIC DEVICES |
US20080050599A1 (en) * | 2001-01-18 | 2008-02-28 | Sony Corporation | Crystal film, crystal substrate, and semiconductor device |
-
2011
- 2011-10-20 EP EP11772973.1A patent/EP2630277A1/en not_active Withdrawn
- 2011-10-20 WO PCT/EP2011/068337 patent/WO2012052513A1/en active Application Filing
- 2011-10-20 RU RU2013122654/05A patent/RU2013122654A/en not_active Application Discontinuation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002001608A2 (en) * | 2000-06-28 | 2002-01-03 | Advanced Technology Materials, Inc. | METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((Al,In,Ga)N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRONIC DEVICES |
US20080050599A1 (en) * | 2001-01-18 | 2008-02-28 | Sony Corporation | Crystal film, crystal substrate, and semiconductor device |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103165434A (en) * | 2013-01-28 | 2013-06-19 | 华中科技大学 | Method using H2 corrosion and SiNx burying to improve quality of AlGaN material |
JP2015151330A (en) * | 2014-02-19 | 2015-08-24 | 古河機械金属株式会社 | Production method for group-iii nitride semiconductor layer and group-iii nitride semiconductor substrate |
WO2017149079A1 (en) * | 2016-03-04 | 2017-09-08 | Saint-Gobain Lumilog | Method for fabricating a semiconductor substrate |
Also Published As
Publication number | Publication date |
---|---|
RU2013122654A (en) | 2014-11-27 |
EP2630277A1 (en) | 2013-08-28 |
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