CN105609598B - A kind of preparation method of the III V group-III nitride compound substrates with cavity - Google Patents
A kind of preparation method of the III V group-III nitride compound substrates with cavity Download PDFInfo
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- CN105609598B CN105609598B CN201511005017.7A CN201511005017A CN105609598B CN 105609598 B CN105609598 B CN 105609598B CN 201511005017 A CN201511005017 A CN 201511005017A CN 105609598 B CN105609598 B CN 105609598B
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- 239000000758 substrate Substances 0.000 title claims abstract description 55
- 238000002360 preparation method Methods 0.000 title claims abstract description 26
- -1 nitride compound Chemical class 0.000 title claims abstract description 13
- 150000004767 nitrides Chemical class 0.000 claims abstract description 65
- 238000000034 method Methods 0.000 claims abstract description 51
- 230000012010 growth Effects 0.000 claims abstract description 21
- 238000005530 etching Methods 0.000 claims abstract description 17
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 7
- 229910002601 GaN Inorganic materials 0.000 claims description 34
- 238000001259 photo etching Methods 0.000 claims description 19
- 239000000126 substance Substances 0.000 claims description 18
- 238000000151 deposition Methods 0.000 claims description 15
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- 239000002184 metal Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 230000000717 retained effect Effects 0.000 claims description 10
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 9
- 229910004205 SiNX Inorganic materials 0.000 claims description 9
- 238000005516 engineering process Methods 0.000 claims description 9
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 9
- 238000005229 chemical vapour deposition Methods 0.000 claims description 8
- 238000002164 ion-beam lithography Methods 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 7
- 238000011049 filling Methods 0.000 claims description 7
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 claims description 7
- 238000004943 liquid phase epitaxy Methods 0.000 claims description 7
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 238000004528 spin coating Methods 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 229910052681 coesite Inorganic materials 0.000 claims description 6
- 229910052906 cristobalite Inorganic materials 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 229910052682 stishovite Inorganic materials 0.000 claims description 6
- 229910052905 tridymite Inorganic materials 0.000 claims description 6
- 238000005137 deposition process Methods 0.000 claims description 5
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- 229910015844 BCl3 Inorganic materials 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 230000000295 complement effect Effects 0.000 claims description 3
- 230000002708 enhancing effect Effects 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910010092 LiAlO2 Inorganic materials 0.000 claims description 2
- 239000003292 glue Substances 0.000 claims description 2
- YQNQTEBHHUSESQ-UHFFFAOYSA-N lithium aluminate Chemical compound [Li+].[O-][Al]=O YQNQTEBHHUSESQ-UHFFFAOYSA-N 0.000 claims description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 4
- 208000012868 Overgrowth Diseases 0.000 abstract description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 238000000407 epitaxy Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 3
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- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
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- 239000007789 gas Substances 0.000 description 2
- 238000001534 heteroepitaxy Methods 0.000 description 2
- 150000004678 hydrides Chemical class 0.000 description 2
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- 241000208340 Araliaceae Species 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
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- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
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- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a kind of preparation method of the III V group-III nitride compound substrates with cavity.Present invention pregrown III V group-III nitride film layers on substrate, using the method formation raceway groove of etching, filled again with filled media, then growth III V group-III nitrides thick film layers cover whole surface, filled media is finally removed using etchant solution, so as to leave cavity being filled the position that medium occupies originally, the III V group-III nitride compound substrates with cavity are formed；Cavity size prepared by the present invention has controllability, to realize according to difference the need for design the purpose of cavity structure；Cavity serves as stress release layer during subsequent growth, crystal need to be merged by epitaxial lateral overgrowth in growth course across filled media simultaneously, the design of this regular controllable cavity not only helps discharge stress, the dislocation density of crystal is also greatly reduced simultaneously, can be relatively easy to obtain low stress, the high-quality III V group-III nitride films of low-defect-density.
Description
Technical field
The present invention relates to the preparation field of electronic device, and in particular to a kind of III-V nitride composite lining with cavity
The preparation method at bottom.
Background technology
The advantages of III nitride semiconductor is with its long lifespan, energy-saving and environmental protection, rich color, safety and stabilization, gradually
Develop into lighting source of new generation.At present, it is the outgoing efficiency of raising LED internal lights, graphical sapphire substrate has been criticized
Amount production and the substrate for being widely used as LED growths.However, due to the limitation of hetero-epitaxy, lattice mismatch causes with thermal mismatching
High-quality III-V nitride prepares extremely difficult.Prepared by hetero-epitaxy answers in the growth course of III-V nitride film
Power is constantly accumulated, and is caused epitaxial wafer bending or even is ftractureed.At present frequently with the method for alleviation stress have：Insert Weak link layer
Method, lateral epitaxial method and two-sided growth method.However, the above method alleviate stress effect it is limited, cause device performance decline or
Person's epitaxial wafer warpage seriously even causes cracking.Therefore, the GaN compound substrates of stress can significantly be discharged in the urgent need to a kind of
Preparation method.
The content of the invention
In order to overcome the deficiencies in the prior art, the present invention proposes a kind of III-V nitride compound substrate with cavity
Preparation method, the size of cavity determines by the size of Lithographic template and the depth of etching so that cavity chi prepared by the present invention
It is very little that there is controllability, can according to designing cavity structure the need for difference, and then prepare preferably with cavity structure, for nitrogen
The compound substrate of compound growth.
It is an object of the invention to propose a kind of preparation method of the III-V nitride compound substrate with cavity.
The preparation method of the III-V nitride compound substrate with cavity of the present invention, comprises the following steps：
1) one layer of III-V nitride of pregrown first on substrate, forms III-V nitride film layer, Ran Houchen
One layer of mask layer of product；
2) the first Lithographic template is utilized, using photoetching process, patterned structures are formed on mask layer；
3) III-V nitride of etching mask layer open area is to the surface of substrate, in III-V nitride film layer
Middle formation raceway groove, the feature size and etch period of the size of raceway groove on mask layer determines that the raceway groove of formation need to be conducted to
The edge of III-V nitride film layer；
4) raceway groove in III-V nitride film layer is filled using filled media；
5) the second Lithographic template is utilized, using photoetching combination chemical attack or the side of photoetching combination focused-ion-beam lithography
Method, or, chemical attack or stripping technology are directly used, is deposited on the surface for removing the III-V nitride retained
Filled media；
6) laterally overgrown technology growth III-V nitride thick film layers are used, covering fills raceway groove with filled media
III-V nitride film layer whole surface；
7) filled media being filled in the raceway groove of III-V nitride film layer is removed using etchant solution, originally quilt
The position that filled media is occupied turns into cavity, forms the compound substrate with cavity.
Wherein, in step 1) in, substrate is that use can realize the material of III-V nitride growth, using sapphire
Substrate, carborundum SiC substrate, gallium nitride GaN substrate, silicon Si substrates, lithium aluminate LiAlO2In substrate and zinc oxide ZnO substrates
One kind.III-V nitride film layer is grown using molecular beam epitaxy (Molecular Beam Epitaxy, MBE), gold
Belong to organic chemical vapor deposition method (Metal-organic Chemical Vapor Deposition, MOCVD), hydride gas
Phase epitaxy method (Hydride Vapor Phase Epitaxy, HVPE) and liquid phase epitaxy (Liquid Phase Epitaxy,
LPE one kind in), III-V nitride film layer of the growth thickness between 3~15 μm.
The method of III-V nitride film layer is grown using MOCVD, mainly in two steps：Low temperature iii-v is nitrogenized first
The growth of thing cushion, temperature between 500~600 DEG C, pressure between 100~400Torr, thickness 50~300nm it
Between；Subsequent high growth temperature III-V nitride epitaxial layer again, temperature range is in 900~1050 DEG C, pressure in 300~600Torr
Between, thickness is between 2~8 μm, and the thickness of III-V nitride film layer is by Substrate orientation, growth conditions, target Ginseng numbers etc.
It is comprehensive to determine.
Then one layer of mask layer is deposited, material uses SiO2、SiNxOr metal.SiO2Or SiNxThickness 200~
Between 1500nm.Method using plasma enhancing chemical vapour deposition technique (the Plasma Enhanced Chemical of deposition
Vapor Deposition, PECVD) or ald (Atomic Layer Deposition, ALD).It is heavy using PECVD
Product SiO2Method：Depositing temperature between 80~200 DEG C, pressure between 50~100Pa, equipment run power 80~
Between 120W, with SiH4It is used as Si sources, N2O as O sources, in deposition process flow control respectively 30~80sccm, 100~
Between 150sccm.When from metal, as mask layer, metal uses one kind in electron-beam vapor deposition method, magnetron sputtering and thermal evaporation
Prepared by method, specific thickness is determined by the size, the property of the metal material used and subsequent technique of required cavity, is transported
With nickel as mask layer in the case of, formed mask layer need thickness between 5nm~100nm.
In step 2) in, photoetching process prepares patterned structures and is mainly carried out in two steps：One layer of photoresist of spin coating first is gone forward side by side
Row front baking, glue thickness is between 2~5 μm；Then it is exposed using the first Lithographic template, dries, develops and post bake, by the first light afterwards
The pattern transfer of die sinking plate forms patterned structures to photoresist on mask layer.Patterned structures can be column or bar
Shape.
In step 3) in, the iii-v nitrogen in mask layer upper shed region is removed using chemical attack or focused ion beam
Compound film layer forms raceway groove and the iii-v retained nitridation to the surface of substrate in III-V nitride film layer
Thing.Included with the preparation method that focused-ion-beam lithography method etches III-V nitride：Etching temperature is room temperature, pressure 1~
Between 5Pa, etching power is between 80~120W, Cl2、BCl3And N2O flow is controlled between 20~50sccm, etching
The time thickness of the III-V nitride depending on that need to etch is determined.The III-V nitride retained is shaped as column or bar
Shape.
In step 4) in, using SiO2Or SiNxThe ditch between III-V nitride film layer is filled as filled media
Road, the thickness for depositing filled media is defined by filling and leading up raceway groove formation plane.The chemical gas of method using plasma enhancing of deposition
The method such as phase sedimentation PECVD or ald ALD.SiN is deposited using PECVDxMethod include：Depositing temperature 80~
Between 200 DEG C, pressure is between 90~150Pa, and equipment runs power between 80~120W, with SiH4It is used as Si sources, NH3Make
For N sources, flow is controlled between 80~150sccm and 400~700sccm respectively in deposition process.
In step 5) in, removed and retained using the method for photoetching combination chemical attack or photoetching combination focused-ion-beam lithography
Under III-V nitride on filled media include：A) one layer of photoresist of spin coating and front baking is carried out；B) the second photoetching mould is utilized
Plate, exposure, rear baking, development and post bake, by the pattern transfer of the second Lithographic template to photoresist, the second Lithographic template and the first light
Die sinking plate is the complementary figure of shape, and open area is formed above the III-V nitride for needing to retain；C) chemical attack is used
Method or the method for focused-ion-beam lithography the filled media on the surface of III-V nitride is removed.When step 1) in
, can be by chemical corrosion method when the mask layer of deposition is metal, can be molten with the metal reaction of evaporation using hydrochloric acid or nitric acid etc.
The metal of corrosion residual, and the filled media deposited on metal is taken away simultaneously.
In step 6) in, form III-V nitride thick film layers and use hydride gas-phase epitaxy (Hydride Vapor
Phase Epitaxy, HVPE), molecular beam epitaxy (Molecular Beam Epitaxy, MBE), Metallo-Organic Chemical Vapor sink
Area method (Metal-organic Chemical Vapor Deposition, MOCVD) and liquid phase epitaxy (Liquid Phase
Epitaxy, LPE) in one or two kinds of above growing method combination.
In step 7) in, the substrate that grown III-V nitride thick film layers is immersed in etchant solution, removed
Filled media in the raceway groove of III-V nitride film layer so that left cavity being filled the position that medium occupies originally,
Form the III-V nitride compound substrate with cavity.III-V nitride film layer and III-V nitride thick film layers
Material can be with identical, can also be different.The size of cavity is identical with the size of raceway groove, therefore the horizontal size of cavity and the first light
The figure of die sinking plate is consistent, and the thickness that the depth of cavity is etched by III-V nitride film layer is determined.
Advantages of the present invention：
Present invention pregrown III-V nitride film layer on substrate, using the method formation raceway groove of etching, then to fill out
Filling medium is filled, and then grows III-V nitride thick film layers covering whole surface, and finally removing filling using etchant solution is situated between
Matter, so as to leave cavity being filled the position that medium occupies originally, forms the III-V nitride compound substrate with cavity；
The size of cavity is determined by the dimension of picture and etching depth of Lithographic template so that cavity size prepared by the present invention has controllable
Property, to realize according to difference the need for design the purpose of cavity structure；Cavity serves as stress release during subsequent growth
Layer, simultaneously because not depositing III-V nitride in filled media, crystal need to pass through in growth course across filled media
Epitaxial lateral overgrowth and merge, the method for this epitaxial lateral overgrowth is conducive to induced dislocations line to bend and bury in oblivion dislocation, therefore, this rule
Then the design of controllable cavity not only helps discharge stress, while also greatly reducing the dislocation density of crystal, can be used as lining
Bottom is used for the high-quality III-V nitride material for growing low stress, low-defect-density.
Brief description of the drawings
Fig. 1 (a)~(h) is the flow chart of the preparation method of the III-V nitride compound substrate with cavity of the present invention；
Fig. 2 is the III-V retained according to the preparation method of the III-V nitride compound substrate with cavity of the present invention
The top view of group-III nitride, wherein, (a) is column, and (b) is strip.
Embodiment
Below in conjunction with the accompanying drawings, by specific embodiment, the present invention is expanded on further.
Embodiment one：As shown in figure 1, in the present embodiment, the preparation method of the GaN compound substrates with cavity includes：
1) one layer of GaN film of pregrown layer 2 first in Sapphire Substrate 1, then deposits one layer of SiO2It is used as mask layer
3, such as shown in Fig. 1 (a)：
GaN film layer is grown using MOCVD, mainly in two steps：Low-temperature epitaxy GaN cushions first, temperature is 550 DEG C,
Pressure is 300Torr, and thickness is 200nm；Subsequent high growth temperature GaN epitaxial layer again, temperature is 1050 DEG C, pressure is 500Torr,
Thickness is 5 μm；
One layer of SiO is deposited using PECVD in above-mentioned compound substrate2It is used as mask layer：Depositing temperature 80~200 DEG C it
Between, pressure is between 50~100Pa, and equipment runs power between 80~120W, with SiH4It is used as Si sources, N2O sinks as O sources
Product flow in process is controlled between 30~80sccm, 100~150sccm respectively, and deposit thickness is 400nm.
2) the first Lithographic template is utilized, using photoetching, patterned structures are formed on mask layer：
Photoetching process prepares patterned structures and is mainly carried out in two steps：One layer of photoresist 4 of spin coating first, thickness is 4 μm and gone forward side by side
Shown in row front baking, such as Fig. 1 (b)；Then it is exposed and is passed through using the first Lithographic template and is dried, develops and post bake, by first later
The pattern transfer of Lithographic template forms patterned structures, shown in such as Fig. 1 (c) to photoresist on mask layer.Patterned structures are
Strip or column.
3) the GaN film layer in chemical corrosion method etching mask layer upper shed region is to the surface of substrate, in GaN film layer
Raceway groove is formed, shown in such as Fig. 1 (d)：
Corrosive liquid is the aqueous solution 1 of hydrofluoric acid and ammonium fluoride:5 mix, immersion corrosive liquid 4~8 minutes.
4) SiN is deposited using PECVDxThe raceway groove in GaN film layer is filled as filled media 5：
Depositing temperature between 80~200 DEG C, pressure between 90~150Pa, equipment run power 80~120W it
Between, with SiH4It is used as Si sources, NH3As N sources, in deposition process flow control respectively 80~150sccm and 400~
Between 700sccm.
5) the second Lithographic template is utilized, using the method for photoetching combination chemical attack, is deposited on the surface for removing GaN
SiNx：
A) one layer of photoresist 6 of spin coating and front baking is carried out；B) it is exposed and is passed through using the second Lithographic template and is dried, develops later
And post bake, by the pattern transfer of the second Lithographic template to photoresist, the second Lithographic template and the first Lithographic template are that shape is complementary
Figure, open area is formed above the GaN for needing to retain, shown in such as Fig. 1 (e)；C) with the method for chemical attack by GaN's
SiN on surfacexRemove, such as shown in Fig. 1 (f).
6) using laterally overgrown technology growth GaN thick film layers 7, cover with SiNxFill the GaN of the pregrown of raceway groove
The whole surface of film：
First by Metalorganic Chemical Vapor Deposition laterally overgrown film GaN, recycle outside hydrite vapor phase
Prolong method fast-grown thick film GaN, 30 μm of thickness, temperature range is at 900~1200 DEG C, and pressure is between 100~450Torr；
HVPE fast-growths temperature range is at 600~1100 DEG C, and pressure limit is between 250~700Torr.
7) SiN being filled in the raceway groove of GaN film layer is removedx, form the compound substrate with cavity：
It is immersed in HF solvents, removes the SiN filled in GaN raceway groovesxSo that in SiNxThe position occupied leave cavity
8, form the GaN compound substrates with cavity.
As shown in Fig. 2 in step 3) in, the III-V nitride 41 that retains is shaped as column, as shown in 2 (a),
Or be strip, such as shown in figure (b).The raceway groove 42 that etching is formed is conducted to chip (wafer) edge, so as to connect with outside
Logical, filled media is also connected with outside, and when compound substrate is put into etchant solution, filled media is corroded, so as to be formed
Cavity.
Embodiment two：As shown in figure 1, in the present embodiment, the preparation method of the GaN compound substrates with cavity includes：
1) one layer of GaN film of pregrown layer 2 first in Sapphire Substrate 1, then deposits layer of metal nickel as covering
Film layer 3, such as shown in Fig. 1 (a)：
GaN film layer is grown using MOCVD, mainly in two steps：Low-temperature epitaxy GaN cushions first, temperature is 550 DEG C,
Pressure is 300Torr, and thickness is 200nm；Subsequent high growth temperature GaN epitaxial layer again, temperature is 1050 DEG C, pressure is 500Torr,
Thickness 5 for μm；
Layer of Ni is deposited as mask layer 3 using electron beam evaporation method in above-mentioned compound substrate, thickness is 50nm..
2) the first Lithographic template is utilized, using photoetching, patterned structures are formed on mask layer：
Photoetching process prepares patterned structures and is mainly carried out in two steps：One layer of photoresist 4 of spin coating first, thickness is 4 μm and gone forward side by side
Shown in row front baking, such as Fig. 1 (b)；Then it is exposed and is passed through using Lithographic template and is dried, develops and post bake, by Lithographic template later
Pattern transfer to photoresist, patterned structures are formed on mask layer, shown in such as Fig. 1 (c).Patterned structures be strip or
Column.
3) the GaN film layer of open area is etched to the surface of substrate by mask of metallic nickel Ni, in GaN film layer
Formed shown in raceway groove and the GaN retained, such as Fig. 1 (d)：The temperature of etching is room temperature, and pressure is 1~5Pa, and etching power is
80~120W, Cl2、BCl3、N2O flow is controlled between 20~50sccm, and time of etching is depending on the GaN's that need to retain
Thickness is determined.
4) SiN is deposited using PECVDxThe raceway groove in GaN film layer is filled as filled media 5：
Depositing temperature between 80~200 DEG C, pressure between 90~150Pa, equipment run power 80~120W it
Between, with SiH4It is used as Si sources, NH3As N sources, flow is controlled in 80~150sccm and 400~700sccm respectively in deposition process
Between.
5) stripping technology is used, stripping metal Ni removes the SiN deposited on W metal simultaneouslyx, such as shown in Fig. 1 (f).
6) using laterally overgrown technology growth GaN thick film layers 7, cover with SiNxFill the GaN of the pregrown of raceway groove
The whole surface of film：
First by Metalorganic Chemical Vapor Deposition laterally overgrown film GaN, recycle outside hydrite vapor phase
Prolong method fast-grown thick film GaN, thickness is 30 μm, temperature range between 900~1200 DEG C, pressure 100~450Torr it
Between；HVPE fast-growths temperature range is between 600~1100 DEG C, and pressure limit is between 250~700Torr.
7) SiN being filled in the raceway groove of GaN film layer is removedx, form the compound substrate with cavity：
It is immersed in HF solvents, removes the SiN filled in the raceway groove of GaN film layerxSo that in SiNxThe position occupied
Cavity 8 is left, the GaN compound substrates with cavity are formed.
As shown in Fig. 2 in step 3) in, the III-V nitride 41 that retains is shaped as column, as shown in 2 (a),
Or be strip, such as shown in figure (b).The raceway groove 42 that etching is formed is conducted to the edge of GaN film layer, so that connected with outside,
Filled media is also connected with outside, and when compound substrate is put into etchant solution, filled media is corroded, so as to form sky
Chamber.
It is finally noted that, the purpose for publicizing and implementing example is that help further understands the present invention, but this area
Technical staff be appreciated that：Without departing from the spirit and scope of the invention and the appended claims, it is various to replace and repair
It is all possible for changing.Therefore, the present invention should not be limited to embodiment disclosure of that, and the scope of protection of present invention is to weigh
The scope that sharp claim is defined is defined.
Claims (10)
1. a kind of preparation method of the III-V nitride compound substrate with cavity, it is characterised in that the preparation method includes
Following steps：
1) one layer of III-V nitride of pregrown first on substrate, forms III-V nitride film layer, then deposits one
Layer mask layer；
2) the first Lithographic template is utilized, using photoetching process, patterned structures are formed on mask layer；
3) III-V nitride of etching mask layer open area is to the surface of substrate, the shape in III-V nitride film layer
Into raceway groove, the feature size and etch period of the size of raceway groove on mask layer determine that the raceway groove of formation need to be conducted to iii-v
The edge of nitride film layer；
4) raceway groove in III-V nitride film layer is filled using filled media；
5) the second Lithographic template is utilized, using photoetching combination chemical attack or the method for photoetching combination focused-ion-beam lithography, or
Person, directly uses chemical attack or stripping technology, and the filling deposited on the surface for removing the III-V nitride retained is situated between
Matter；
6) laterally overgrown technology growth III-V nitride thick film layers are used, covers and raceway groove is filled with filled media
The whole surface of III-V nitride film layer；
7) filled media being filled in the raceway groove of III-V nitride film layer is removed using etchant solution, was filled originally
The position that medium is occupied turns into cavity, forms the compound substrate with cavity.
2. preparation method as claimed in claim 1, it is characterised in that in step 1) in, substrate is using Sapphire Substrate, carbon
One kind in silicon substrate, gallium nitride GaN substrate, silicon Si substrates and lithium aluminate LiAlO2 substrates.
3. preparation method as claimed in claim 1, it is characterised in that in step 1) in, grow III-V nitride film layer
Using one kind in molecular beam epitaxy, Metalorganic Chemical Vapor Deposition, hydride vapour phase epitaxy method and liquid phase epitaxy,
III-V nitride film layer of the growth thickness between 3~15 μm.
4. preparation method as claimed in claim 1, it is characterised in that in step 2) in, photoetching process prepares patterned structures master
It is carried out in two steps：One layer of photoresist of spin coating and front baking is carried out first, glue thickness is between 2~5 μm；Then the first photoetching mould is utilized
Plate is exposed, dries, develops and post bake afterwards, and by the pattern transfer of the first Lithographic template to photoresist, figure is formed on mask layer
Shape structure；Patterned structures can be column or strip.
5. preparation method as claimed in claim 1, it is characterised in that in step 3) in, using chemical attack or focus on from
Beamlet removes the III-V nitride film layer in mask layer upper shed region to the surface of substrate, in III-V nitride film
Raceway groove and the III-V nitride retained are formed in layer；The preparation of III-V nitride is etched with focused-ion-beam lithography method
Method includes：Etching temperature is room temperature, and pressure is between 1~5Pa, and etching power is between 80~120W, Cl2、BCl3And N2O
Flow control between 20~50sccm.
6. preparation method as claimed in claim 1, it is characterised in that in step 4) in, using SiO2Or SiNxIt is situated between as filling
Raceway groove between matter filling III-V nitride film layer, the thickness for depositing filled media is defined by filling and leading up raceway groove formation plane；
The method using plasma enhancing chemical vapour deposition technique PECVD or ald ALD of deposition.
7. preparation method as claimed in claim 6, it is characterised in that SiN is deposited using PECVDxMethod include：Deposition temperature
Degree is between 80~200 DEG C, and pressure is between 90~150Pa, and equipment runs power between 80~120W, with SiH4It is used as Si
Source, NH3As N sources, flow is controlled between 80~150sccm and 400~700sccm respectively in deposition process.
8. preparation method as claimed in claim 1, it is characterised in that in step 5) in, using photoetching combination chemical attack or
The filled media that the method for photoetching combination focused-ion-beam lithography is removed on the III-V nitride retained includes：A) spin coating
One layer of photoresist simultaneously carries out front baking；B) the second Lithographic template, exposure, rear baking, development and post bake, by the second Lithographic template are utilized
Pattern transfer is to photoresist, and the second Lithographic template and the first Lithographic template are the complementary figure of shape, in the III-V for needing to retain
Open area is formed above group-III nitride；C) method of chemical attack or the method for focused-ion-beam lithography are used by iii-v nitrogen
Filled media on the surface of compound is removed.
9. preparation method as claimed in claim 1, it is characterised in that in step 5) in, when the mask of step deposition in 1)
When layer is metal, the surface deposition of the III-V nitride retained is directly removed using chemical attack or stripping technology
Filled media on the mask layer and mask layer of residual.
10. preparation method as claimed in claim 1, it is characterised in that in step 7) in, substrate is immersed in etchant solution
In, remove the filled media in the raceway groove of III-V nitride film layer so that be filled the position that medium is occupied originally
Cavity is left, the III-V nitride compound substrate with cavity is formed.
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