EP2622027A1 - Compositions polymères ou monomères comprenant au moins un monoamide et/ou au moins un diamide pour éliminer des substances de substrats et procédés d'utilisation desdites compositions - Google Patents

Compositions polymères ou monomères comprenant au moins un monoamide et/ou au moins un diamide pour éliminer des substances de substrats et procédés d'utilisation desdites compositions

Info

Publication number
EP2622027A1
EP2622027A1 EP11761209.3A EP11761209A EP2622027A1 EP 2622027 A1 EP2622027 A1 EP 2622027A1 EP 11761209 A EP11761209 A EP 11761209A EP 2622027 A1 EP2622027 A1 EP 2622027A1
Authority
EP
European Patent Office
Prior art keywords
solvent
weight percent
composition
acid
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP11761209.3A
Other languages
German (de)
English (en)
Inventor
Michael Wayne Quillen
Dale Edward O'dell
Zachary Philip Lee
John Cleaon Moore
Edward Enns Mcentire
Spencer Erich Hochstetler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eastman Chemical Co
Original Assignee
Eastman Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Chemical Co filed Critical Eastman Chemical Co
Publication of EP2622027A1 publication Critical patent/EP2622027A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D4/00—Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; Coating compositions, based on monomers of macromolecular compounds of groups C09D183/00 - C09D183/16
    • C09D4/06—Organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond in combination with a macromolecular compound other than an unsaturated polymer of groups C09D159/00 - C09D187/00
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D9/00—Chemical paint or ink removers
    • C09D9/005—Chemical paint or ink removers containing organic solvents
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/37—Polymers
    • C11D3/3746—Macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
    • C11D3/378—(Co)polymerised monomers containing sulfur, e.g. sulfonate
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/263—Ethers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3218—Alkanolamines or alkanolimines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/40—Specific cleaning or washing processes
    • C11D2111/42—Application of foam or a temporary coating on the surface to be cleaned

Definitions

  • the present disclosure relates generally to the removal of at least one substance from a substrate.
  • the present disclosure relates to a method for use with a range of compositions, which may apply to the removal of both amorphous and thermoset polymers from electronic devices including, but not limited to, semiconductor wafers, flat panel displays (FPDs), and other microelectronic substrates.
  • FPDs flat panel displays
  • Various polymers may be used in the manufacture of electronic devices, including, for instance, photoresists and organic-based dielectrics.
  • Photoresists may be used throughout semiconductor device fabrication in photolithographic operations.
  • a photoresist may be exposed to actinic radiation through a photomask.
  • exposure may cause a chemical reaction within the material resulting in a solubility increase in aqueous alkali, allowing it to be dissolved and rinsed away with developer.
  • a negative-acting resist is used, cross-linking of the polymer may occur in the exposed regions while leaving unexposed regions unchanged. The unexposed regions may be subject to dissolution and rinsing by a suitable developer chemistry. Following development, a resist mask may be left behind.
  • the design and geometry of the resist mask may dependent upon the positive or negative tone of the resist; positive tone resist may match the design of the photomask, while a negative tone resist may provide a pattern that is opposite the photomask design.
  • positive tone resist may match the design of the photomask
  • a negative tone resist may provide a pattern that is opposite the photomask design.
  • photoresists may require several cleaning steps with a final clean of the mask before the next circuit design process step is implemented.
  • Organic-based dielectrics represent engineering polymers used to offer insulative properties to the microelectronic circuit. Examples of these chemistries include polyimide (PI) and poly-(p-phenylene-2, 6- benzobisoxazole) (PBO) as manufactured by Hitachi-DuPont Microsystems. Another exemplary organic-based dielectric for electronic applications is bisbenzocyclobutene (BCB), manufactured by the USA-based, Dow Chemical Company. These polymers may be applied to the substrate in a similar fashion as photoresists using conventional spin, spray, or they may be slit- coated (which can be done, for instance in manufacturing FPDs). For these application reasons, organic-based dielectrics may often be referred to as spin-on dielectrics.
  • the organic-based dielectrics may undergo a patterning process, but ultimately all of these systems lead to a final-stage cure, which may permanently fix the material in place by undergoing chemical and physical property changes.
  • the final material may, for instance, exhibit both electrical and physical properties desirable for performance of the electric circuit.
  • Positive photoresists may be based upon resins of the Novolac or polyhydroxystyrene (Phost) varieties chosen for high-resolution device processing in front-end semiconductor and flat panel display manufacturing.
  • Positive-tone systems represent the largest volume portion of photoresists produced globally and there are many suppliers. Exemplary suppliers of these systems for both semiconductor and FPD include, but are not limited to, the USA-based AZ Electronic Materials, the USA-based Rohm and Haas Company, and the Japanese company, Tokyo Ohka Kogyo Co. Ltd.
  • a substrate may be etched by plasma processes, which may use gases of inert and chemical varieties to, for instance, produce both ionized and reactive species that travel through the mask and etch down into the substrate.
  • ionized and reactive species may combine with atoms of the substrate, form a by-product, and that by-product is vented away via the reduced pressure of the plasma system.
  • These same gaseous species may also impact the photoresist mask, for instance, by baking it into place and also ejecting carbon-containing byproducts into the plasma.
  • Photoresist by-products may mix with other species in the plasma and are continually directed down towards the substrate. These materials may condense to form a residue along the sidewalls of the etched features, producing a condition otherwise referred to as anisotropic etching, whereby species are highly controlled and directed into the substrate with little or no lateral loss.
  • this etch residue may be removed along with the resist mask to prevent potentially deleterious effects on subsequent processes and lead to reduced device performance or device failure.
  • Such residues and their associated resist masks can be difficult to remove, normally involving the use of formulated stripper chemistries.
  • Negative photoresists may be chosen for more rigorous process conditions whereby more aggressive chemical or thermal exposure processes may be used. These negative photoresists include, but are not limited to, isoprene (rubber), acrylic, and epoxy-based resins. Cyclized isoprene
  • (rubber) photoresists may be chosen for their high chemical resistance.
  • photoresists for example, may be obtained from Fujifilm Electronic Materials, Ltd. under the trade name SC-RESIST or HNR-RESIST.
  • Negative-tone isoprene resin resists may be used in aluminum processing where a brief chemical etch may be used to remove metal surrounding the masked feature.
  • Negative-tone acrylic photoresists may be chosen for wafer- level-packaging bump formation.
  • Suppliers include, but are not limited to, the USA-based Printed Circuits Division of E. I. duPont de Nemours and
  • Dry-film and spin-on acrylics may offer an ability to deposit thick layers from 25 microns ( ⁇ ) to 120 microns ( ⁇ ), used to pattern the corresponding solder bumps. Once the pattern is formed, metal deposition may occur by electroplating or screen-printing, a process that may expose the resist to heated acid or baking in excess of 250°C, respectively.
  • Another exemplary negative resist is an epoxy system under the trade name of SU-8TM, originally developed by International Business Machines (IBM) and now sold by the USA company, MicroChem Corporation, and Gersteltec Engineering Solutions, a Swiss- based company.
  • the SU-8TM may be chosen for thick patterns that may exceed 300 microns, with a high-aspect ratio (i.e., height vs. width), and with the pattern definition to exhibit straight sidewalls. Because of the unique characteristics of the SU-8TM epoxy resin, photoresists of this variety may be chosen to manufacture large devices, and may include microeletromechanical systems (MEMS). The varieties of negative-tone photoresists may be different from positive, their cleaning (removal) practice may be even more rigorous. The SU-8TM photoresist may be considered to be a permanent system, removed only with more complex, time, and costly practices.
  • MEMS microeletromechanical systems
  • the chemistry of positive-tone resists may be hydrophilic (polar) and amorphous (i.e., non thermoset and cross-linked), and it may be easier to clean (remove) using conventional solvents and/or chemical strippers.
  • the resins for positive-tone chemistries may be based upon either Novolac (cresol, phenol-formaldehyde) or polyhydroxystyrene (Phost), with options of styrenated copolymer and/or acrylic/PMMA (polymethylmethacrylate). These chemistries may offer good adhesion and fixing to a wide variety of surfaces while the hydroxyl groups present in the various forms of Novolac (i.e.
  • cresol, bis-phenol, etc. may provide intermolecular hydrogen bonding that aids in aqueous solubility. This condition may combine during the photoconversion of the initiator diazonaphthoquinone (DNQ) in Novolac systems, while in Phost systems, the acid catalyzed de-protection of the ester forms the more soluble alcohol. When used during operating conditions up to and including 100°C, these systems remain soluble in polar solvents while their UV- exposure will produce counterparts that are soluble in aqueous-base.
  • DNQ diazonaphthoquinone
  • the positive-tone resists may be used as primary imaging masks for plasma-based etching.
  • species in the plasma may produce etch residue while exposing the mask to temperatures exceeding 150°C.
  • Etch residue e.g. side-wall polymer
  • the chemistry of the residue may comprise constituents of the substrate, metal topography, and plasma gases, to include silicon, gallium, arsenic, boron, phosphate, titantium, tantalum, tungsten, copper, nickel, aluminum, chromium, fluorine, chlorine, as well as carbon containing compounds.
  • Novolac systems that contain hydroxyl constituents, these elevated
  • temperature exposure conditions may facilitate further reactions to form insoluble species.
  • the reactivity of hydroxyl groups with halides and active metals, especially in the heated and acidic conditions of a plasma, to produce alkyl halides, esters, and, in some cases, high molecular weight polymers is known (Morrison, R. T. and Boyd, R.N., Organic Chemistry, 3rd ed., Allyn & Bacon, Inc., Boston MA, Ch. 16 (1973)).
  • Cleaning of etch residue and overexposed photoresist masks resulting from the effects of hot plasma etching may require the use of chemical strippers processed at elevated temperatures for extended periods of time dependent upon the process and tool.
  • Tg glass transition
  • Cleaning (removal) of photoresist etch residue and the mask use complex chemical strippers composed of organic solvents, amines, water, reducing agents, chelating agents, corrosion inhibitors, and surfactants.
  • the reducing agent, hydroxylamine has been cited in the literature as a basic material that may facilitate dissolution of photoresist and its residue while offering protection of underlying aluminum metal features.
  • the use of stripper chemistries may involve the delivery of large volumes of stripper to the substrate to be cleaned at a specific temperature for a given period of time.
  • Hydroxylamine may be acceptable for cleaning of aluminum devices; however, it may be too aggressive for copper.
  • Device architecture using copper and low-K (dielectric constant, K), e.g. Cu/Low-K, may require fluorinated-based chemistries to remove silicon-laden etch residue.
  • Amines and ammonia compounds are known to be complexing agents for Cu and may etch (attack) copper metal.
  • Negative photoresists used in forming wafer bumping metallization masks may include acrylic, styrenic, maleic anhydride or related monomers and copolymers. Such materials may be used to produce photosensitive thick films. These photoresists may be referred to as "acrylic" polymer systems due to the pendant groups on the main polymer chains, which include vinyl groups common to acrylics.
  • the dry-film form of acrylic photoresists may be chosen where exposure to rigorous process conditions is required. As a result of this exposure, the cleaning of dry-film masks and residues may present a stripper challenge.
  • Resist stripping compositions that include aromatic quaternary ammonium hydroxide such as benzyltrimethylammonium hydroxide (BTMAH), a solvent such as an alkylsulfoxide, a glycol and a corrosion inhibitor and non- ionic surfactant may not completely remove many dry-film resists from a wafer surface.
  • aromatic quaternary ammonium hydroxide such as benzyltrimethylammonium hydroxide (BTMAH)
  • a solvent such as an alkylsulfoxide
  • NMP N- methylpyrrolidone
  • compositions that include a quaternary ammonium hydroxide as tetramethylammonium hydroxide (TMAH) in NMP may not completely dissolve many dry-film resist. As discussed above, incomplete dissolution may produce particles that can become a source of contamination resulting in yield loss.
  • Stripper chemistries that may be used to clean residue and masks resulting from rubber photoresists may include a
  • hydrocarbon solvent and an acid commonly a sulfonic acid.
  • High acidity may be required for performance and emulsification of hydrolyzed rubber components.
  • Representative inhibitors include, but are not limited to, mercaptobenzotriazole (MBT) and related triazoles to, for instance, prohibit attack upon adjacent metallic features.
  • An exemplary inhibitor for these chemistries includes catachol, a toxic and carcinogenic material.
  • rinse steps for hydrocarbon strippers of this variety should use isopropanol (I PA) or related neutral and compatible solvents. This rinse practice, albeit a cost increase, may reduce the effects of metal attack to adjacent metals due to a pH-drop during water mixing with constituents of the stripper. Due to compatibility issues, wastes from the use of hydrocarbon-based strippers should be segregated from normal organic streams in a microelectronic fabrication.
  • a cleaning tool may provide control in the process. Variability between part batches may be reduced by the operation of the tool. Barring any mixing or chemical adjustments made by the unit, the variables available to the tool for control include temperature, agitation, and time. With an ever- present intensive pressure to increase throughput in a manufacturing line, a constant emphasis is to decrease the process time. Again, without a change in chemistry, temperature and/or agitation may be increased with the expectation that polymer dissolution rates may increase resulting in shorter process time. However, other reactions that are contradictory to the objectives of the process, such as corrosion rate, may also increase with increased temperature and/or agitation. Continued loading of the stripper chemistry with the organic substance may cause a reduction in bath life and may accelerate the observation of residue or other phenomena that indicate a drop in performance. Further all wafers do not experience the exact same stripping environment, thus causing some amount of process variation.
  • bath life may be facilitated by increasing temperature and/or agitation. Where agitation should be controlled to protect substrate features, bath life conditions may be increased through increased polymer dissolution with increasing temperature.
  • SEMI S3- 91 Safety Guidelines for Heated Chemical Baths.
  • liquid over temperature shall be controlled at not more than 10°C above the normal operating temperature of the liquid, where the typical operating temperature does not exceed the flashpoint of the liquid.
  • Many companies set policy that is more restrictive such as operating at 10°C below the flashpoint and setting the over temperature to be the flashpoint.
  • Resist stripping at an FPD manufacturing plant may occur on large substrates traveling on a conveyor from one chamber to another.
  • the resist may be stripped from the panel by a stripper delivered by a sprayer that floods the entire glass surface, traveling to a rinse stage where distilled, deionized, or demineralized water or an alternative solvent may be sprayed onto the surface, and the process may be completed with a drying step that may include a hot air knife.
  • Stripping may be supported by at least two product tanks that are separate and distinct and arranged in-line with the flow direction of the parts. Substrates entering the tool may be first "washed" by the chemistry in the first tank.
  • the stripper may be sprayed onto the substrate surface, and upon reacting with the resist and flowing off of the substrate, it may be collected and returned to the tank where it may then be heated and filtered such that any suspended and undissolved materials may be removed from the bulk chemistry.
  • the filtered and heated stripper may be then cycled back to the spray chamber where it may be delivered to the substrate in a continuous manner that optimizes the resist stripping process.
  • tank #2 As the part travels on the conveyor from the first chamber supported by tank #1 to the next chamber supported by tank #2, there may be a purity change in the stripper.
  • the conditions of operation for tank #2 may be the same as that for tank #1 , the amount of resist present may be lower than that for tank #1 .
  • Typical processing times may be defined for chamber #1 to offer a dwell time of the chemistry in contact with the resist that may optimize resist stripping and maximum removal. Over time, tank #1 may reach a maximum loading capacity for dissolved resist and a decision to replace the contents may be necessary. When this occurs, the contents of tank #1 may be sent to waste and replaced by the contents of tank #2. The contents of tank #2 may be replaced with fresh stripper (i.e. pure stripper).
  • the system may be said to operate in a counter-current fashion. Namely, the process flow of parts may be "counter" or opposite to the flow direction of the chemistry.
  • tanks #1 and #2 may become the dirty and clean tanks, respectively. In other words, the unwanted resist may be concentrated in the front of the line while the cleanest chemistries remain near the end whereby after this point, the product substrate may be rinsed and dried.
  • the configuration given above for the FPD example may be consistent with many, if not all, in-line bench style tools and with many batch style- processing tools.
  • parts may move from one station to another while the tanks are at fixed locations.
  • the parts In a batch style tool, the parts may rotate but remain at a fixed location, while the chemistry may be delivered by spraying.
  • There may be two tanks, the tool may pump from one or the other and carry-out counter-current cleaning designs by the use of "dirty" and "clean" tanks.
  • the at least one solvent comprises at least one ethylene glycol moiety or at least one propylene glycol moiety and wherein the length of the at least one glycol moiety or the at least one propylene glycol moiety ranges from 1 to 5 carbon atoms;
  • At least one end group of the at least one solvent comprises ether functionality or alkyl ether functionality; and wherein the length of at least one endgroup ranges from 1 to 6 carbon atoms.
  • Another embodiment of the present disclosure concerns a composition comprising:
  • the at least one solvent comprises at least one ethylene glycol moiety or at least one propylene glycol moiety and wherein the length of the at least one glycol moiety or the at least one propylene glycol moiety ranges from 1 to 5 carbon atoms;
  • At least one end group of the at least one solvent comprises ether functionality or alkyl ether functionality; and wherein the length of at least one endgroup ranges from 1 to 6 carbon atoms.
  • composition comprising:
  • composition comprising:
  • composition comprising:
  • iii at least one monomer that is a mono-amide or a diamide, alone or further in combination with a diester
  • At least one solvent at a weight percent ranging from 0.5% to 99.5%; at least one amine; and
  • At least one sulfonated polymer at weight percent ranging from 0.5 to 99.5%.
  • At least one solvent at a weight percent ranging from 0.5% to 99.5%; at least one amine; and
  • At least one sulfonated monomer at weight percent ranging from 0.1 % to 99.5%.
  • the present disclosure provides stripping compositions and methods, which may quickly and effectively remove polymeric organic substances from, for instance, inorganic substrates, including metallic, non-metallic, and metalized non-metallic substrates or from, for instance, organic substrates, including polymeric substrates, plastics, and wood based substrates or from, for instance, carbon based materials, including graphene, graphite and organic siloxanes, e.g, silsesquioxane
  • the stripping composition comprises a water-soluble sulfonated polymer or sulfonated monomer and various additives, which effectively remove organic substances and their residues of thermoplastic or thermoset nature that comprise the basis for fabricating microcircuits in electronic manufacturing.
  • the process may define a practice of coating the composition onto the substrate, heating the substrate to a specific temperature for a given time sufficient to achieve modification including both dissolution and/or release of the organic
  • compositions and methods may work together to provide performance and other desired goals in manufacturing that may not be seen in conventional stripper processes.
  • organic substances to be removed may be cured to a hard and chemically resistant framework when exposed to the customer's process, the compositions and methods of the present disclosure are found to maintain acceptable
  • compositions and methods of the present disclosure may have particular applicability to semiconductor wafer fabrication, for example, in the removal of organic films and residues from semiconductor wafers.
  • organic substances are present, for example, on post-etched wafers during front-end processing or in back-end wafer-level-packaging during a wafer bumping process.
  • the compositions and methods are particularly suitable for the removal from wafers of hard-to-remove materials such as full-cure polyimide and dry-film photoresist residues.
  • While the present disclosure provides stripping compositions and methods that can effectively remove polymeric organic substances from a substrate, it may also be adapted for removing photoresists that include positive-tone of both Novolac (i.e. cresol formaldehyde) and polyhydroxy styrene (Phost), negative-tone varieties to include acrylics, isoprene (i.e. rubber), and epoxy (i.e. SU-8TM), as well as dielectrics to include polyimide, polybenzoxazole (PBO), and bisbenzocyclobutene (BCB).
  • the compositions and methods may also remove other photoresists, for example, multi-layer photoresists and chemically amplified photoresists.
  • substrates for example, the electronic devices on substrates such as wafers or flat panel displays, which may include various layers and structures such as metal, semiconductor, and the associated organic materials.
  • substrate materials include, for example, semiconductor materials such as silicon, gallium arsenide, indium phosphide, and sapphire, as well as glass and ceramic.
  • water-dissipatable or “water-dispersible”
  • water-dispersible refers to the activity of a water or aqueous solution on the monomer or polymer (Component B).
  • the term is specifically intended to cover those situations wherein a water or aqueous solution dissolves and/or disperses the monomer or polymer material therein and/or therethrough.
  • stripper stripper
  • cleaning composition cleaning composition
  • coating is defined as a method for applying a film to a substrate such as spray coating, puddle coating, slit-coating or immersing.
  • film or “coating” are used interchangeably.
  • indefinite articles “a” and “an” are intended to include both the singular and the plural. All ranges are inclusive and combinable in any order except where it is clear that such numerical ranges are constrained to add up to 100%.
  • wt% means weight percent based on the total weight of the components of the stripping composition, unless otherwise indicated.
  • a process according to the present disclosure may involve submerging the inorganic substrate in a bath of the composition according to the present disclosure or by applying the composition as a coating to the substrate. Once the substrate is submerged in the composition or the composition is applied and covers, or coats, the entire area, heating of the substrate may begin. A rapid rate of heating may occur until the desired temperature is reached and is held for a desired period of time. Alternatively, the bath into which the substrate is submerged maybe maintained at the desired temperature.
  • Rinsing with a rinsing agent may occur and may be followed by a drying step.
  • the total method of practice may involve three (3) distinct steps, namely, coating, heating, and rinsing. However, the steps are not required to be carried out in the order provided.
  • the substrate may first be heated before application of coating.
  • the term "rinsing agent" includes any solvent that removes the composition and material to be stripped.
  • rinsing agents include, but are not limited to, water, pH modified water, acetone, alcohols, for example, isopropyl alcohol and methanol, Dimethylsulfoxide (DMSO), N-methylpyrrolidone (NMP), Glycol Palmitate, Polysorbate 80, Polysorbate 60, Polysorbate 20, Sodium Lauryl Sulfate, Coco Glucoside, Lauryl-7 Sulfate, Sodium Lauryl Glucose
  • the rinsing agent can be water containing a sulfonated monomer or polymer according to the invention in an amount ranging from less than 1 % to the limit of solubility.
  • An embodiment of the disclosure concerns a method whereby a composition according to the present disclosure or other stripping composition is applied as a liquid coating in direct contact with the substance to be removed.
  • the method includes heating anywhere from 25°C to 400°C.
  • the method includes heating anywhere from 100°C to 250°C, for instance from 1 00°C to 200°C.
  • the process includes heating to a temperature above the flash point of the organic solvent that is present in the stripping composition. Variability in temperature may depend upon the nature and thickness of the organic substance.
  • the heating step process time may, for instance, range from 5 seconds to 1 0 minutes, from 1 0 seconds to 8 minutes, or even from 30 seconds to 4 minutes.
  • the entire process time may, for instance, range from less than 15 seconds to 1 80 seconds or from 5 minutes to 1 0 minutes.
  • the variability in time may depend upon the material to be removed, its thickness, and exposure condition.
  • the heating step could be from 1 5 seconds to 1 minute.
  • the heating step may last from 2 to 4 minutes or even longer.
  • Rinsing may be facilitated by the presence of the water-soluble monomer or polymer in the composition. This monomer or polymer performs as a carrier system for the organic substance to be removed from the substrate.
  • the rinsing agent used for rinsing can be at a temperature ranging from 5°C to 1 00°C. However, rinsing may also occur at room temperature and may perform two objectives, to remove the dissolved organic substance, and to reduce the temperature of the substrate such that next stage
  • processing may proceed.
  • compositions of matter used in this disclosure include a major component to be a solvent system of the varieties that may include one or more esters selected from the group consisting of structures (I) R-CO 2 Ri , glycol ether esters of structures (II) R 2 -C0 2 C 2 H 4 (OC 2 H 4 ) n -OR 3 , (III) R 4 - C02C3H 6 (OC 3 H 6 ) n -OR 5 and (IV) R 6 OC0 2 R 7 , alcohols selected from structures (V) R 8 OH, (VI) R 9 OC 2 H 4 (OC 2 H 4 )nOH ! (VII) R 10 OC 3 H 6 (OC 3 H 6 )nOH !
  • suitable solvents include, but are not limited to, ketones such as cyclohexanone, 2-heptanone, methyl propyl ketone, and methyl amyl ketone, esters such as isopropyl acetate, ethyl acetate, butyl acetate, ethyl propionate, methyl propionate, gamma- butyrolactone (BLO), ethyl 2- hydroxypropionate (ethyl lactate (EL)), ethyl 2-hydroxy-2-methyl propionate, ethyl hydroxyacetate, ethyl 2-hydroxy-3-methyl butanoate, methyl 3- methoxypropionate, ethyl 3-methoxy propionate, ethyl 3-ethoxypropionate, methyl 3-ethoxy propionate, methyl pyruvate, and ethyl pyruvate, ethers and glycol ethers such as diisopropyl ether,
  • dimethylpiperidone 2-pyrrole, N-hydroxyethyl-2-pyrrolidone (HEP), N- cyclohexyl-2-pyrrolidone (CHP), and sulfur containing solvents such as dimethyl sulfoxide (DMSO), dimethyl sulfone and tetramethylene sulfone.
  • HEP N-hydroxyethyl-2-pyrrolidone
  • CHP N- cyclohexyl-2-pyrrolidone
  • sulfur containing solvents such as dimethyl sulfoxide (DMSO), dimethyl sulfone and tetramethylene sulfone.
  • organic solvents may be used either individually or in combination (i.e., as mixtures with others), some embodiments of the solvent system contain diethylene glycol (DEG, Eastman Chemical Company), diethylene glycol monomethyl ether (DM SOLVENT, Eastman Chemical Company), diethylene glycol monoethyl ether (DE SOLVENT, Eastman Chemical Company), or diethylene glycol monopropyl ether (DP SOLVENT, Eastman Chemical Company), diethylene glycol monobutyl ether (DB
  • halogenated solvents including, for example, benzylchloride, hydrocarbon based solvents including, for example, those sold under the tradenames AROMATIC 100 and AROMATIC 150, sulfuric acid, or mixtures thereof.
  • compositions of the present disclosure comprise one or more solvents chosen from solvents comprising at least one ethylene glycol moiety or at least one propylene glycol moiety, wherein the length of the at least one ethylene glycol moiety or the at least one propylene glycol moiety ranges from 1 to 5 carbon atoms.
  • at least one end group of the solvent comprises ether functionality or alkyl ether functionality where the at least one end group has a length ranging from 1 to 6 carbon atoms.
  • the solvent is selected from the one or more of ethylene glycol, diethylene glycol, propylene glycol, diethylene glycol ethyl ether, diethylene glycol methyl ether, diethylene glycol butyl ether, diethylene glycol propyl ether, ethylene glycol propyl ether, ethylene glycol butyl ether, and mixtures thereof.
  • An embodiment of the composition includes at least one solvent at a weight percent ranging from 0.5 weight percent to 99.5 weight percent.
  • the solvent is present in the solvent composition at a weight percent ranging from 40% to 97% or at a weight percent from 60% to 90 %.
  • the composition also contains a monomer, which exhibits the property of water solubility, water dispersibility, or water dissipatability present in a range from 0.1 to 99.5 weight percent and derived from, but not limited to, multifunctional sulfomonomers containing at least one metal sulfonate group attached to an aromatic nucleus that are water soluble or water dispersible or water dissipatable determined 0.1 weight percent, for instance 0.5 weight percent concentration or more (i.e. monomer in water) and the metal of the sulfonate group is Na, Li, K, NH 4 and mixtures thereof.
  • the composition includes at least one of these said monomers at 0.1 weight percent to 99.5 weight percent.
  • the monomer is present in the composition at a weight percent ranging from 0.5 to 99.5 or at a weight percent ranging from 0.1 to 5 or at a weight percent ranging from 1 to 5 or at a weight percent ranging from 2 to 59 or at a weight percent ranging from 5 weight percent to 35 weight percent.
  • water soluble monomers may be selected from metal sulfonate salts of isophthalic acid, terephthalic acid, succinic acid, methylene carboxylic acid, and benzoic acid; metal sulfonate salts of a diester of isophthalic acid, terephthalic acid, succinic acid, methylene carboxylic acid, and benzoic acid; or a combination thereof, wherein the sulfonate group is attached to the aromatic nucleus and the metal is selected from lithium, sodium, or potassium and mixtures thereof.
  • monomers include, but are not limited to, 5-sodiosulfoisophthalic acid and salts and esters of the same, such as, the diethylene glycol diester of 5-sodiosulfoisophthalic acid.
  • the composition may contain a polymer, which exhibits the property of water solubility, water dispersibility, or water dissipatability present at a range from 0.5 to 99.5 weight percent and derived from, but not limited to, alcohol ethoxylates, bisphenol ethoxylates and propoxylates, alkylbenzene salts, cellulose acetate phthalate, cellulosic derivatives of alkoxyethyl and hydroxypropyl, copolymers of ethylene and propylene oxide, dendritic polyesters, ethoxylated amines, ethoxylated alcohol salts, ethylene acrylic acid, hydroxy-methacrylates, phosphate esters, polyethylene glycols, polyethylene imine, polyethylene oxides, polyvinyl alcohol, polyvinyl pyrollidinone, starch, styrene maleic anhydride, sulfonated acrylics, sulfonated polystyrenes, sulfon
  • the composition may include one or more of these polymers at 1 .0 weight percent to 99.5 weight percent.
  • the polymer is present in the solvent composition at a weight percent ranging from 5.0 to 99.5 or at a weight percent ranging from 10 to 99.5 or at a weight percent ranging from 5.0 to 25.0 or at a weight percent ranging from 1 .5 to 60.0 or at a weight percent ranging from 2.0 to 30.0 or at a weight percent ranging from 12.0 to 60.0 or at a weight percent ranging from 15.0 to 30.0.
  • the water soluble polymer includes one or more sulfonated polyesters (sulfopolyesters) of the linear or branched varieties respectively, or mixtures thereof.
  • the sulfopolyester is comprised of
  • n 2 to 500, provided that the mole percent of such residues in inversely proportional to the value of n;
  • Suitable sulfopolyester polymers for use in this invention are those known as Eastman AQ® POLYMERS and Eastman AQ COPOLYESTERS.
  • Exemplary polymers may include, but are not limited to, polymers prepared from dimethyl-5-sodiosulfoisophthalate and its parent acid and salts, which may be derived from such co-monomers as isophthalic acid, terephthalic acid, succinic acid, benzoic acid, methylene carboxylic acid and their esters.
  • Diols may be used with such acid co-monomers such as, for example, diethylene glycol, ethylene glycol, triethylene glycol, polyethylene glycol, propylene glycol, 2-methyl propane diol, neopentyl glycol, 1 ,6-hexanediol, and mixtures thereof.
  • acid co-monomers such as, for example, diethylene glycol, ethylene glycol, triethylene glycol, polyethylene glycol, propylene glycol, 2-methyl propane diol, neopentyl glycol, 1 ,6-hexanediol, and mixtures thereof.
  • the polymer may be selected from water soluble, water dispersible, or water-dissipating sulfopolyesters or polyesteramides (herein after referred to collectively as sulfopolyesters) containing ether groups and sulfonate groups having a glycol residue and a dicarboxylic acid residue and at least one difunctional co-monomer containing a sulfonate group attached to an aromatic nucleus and in the form of a metallic salt.
  • sulfopolyesters containing ether groups and sulfonate groups having a glycol residue and a dicarboxylic acid residue and at least one difunctional co-monomer containing a sulfonate group attached to an aromatic nucleus and in the form of a metallic salt.
  • Such polymers are well known to those skilled in the art and are available from Eastman Chemical Company under the tradename of Eastman AQ POLYMERS.
  • sulfopolyesters can be dissolved, dispersed or otherwise dissipated in aqueous dispersions, preferably at temperatures of less than 80°C.
  • the term "residue” or “component” as used in the specification and concluding claims refers to the moiety that is the resulting product of the chemical species in a particular reaction scheme or later formulation or chemical product, regardless of whether the moiety is actually obtained from the chemical species.
  • an ethylene glycol residue in a polyester refers to one or more -OCH 2 CH 2 O- repeat units in the polyester, regardless of whether ethylene glycol is used to prepare the polyester.
  • polyester material may be prepared by any method known to one of ordinary skill in the art.
  • acid in the above description and in the appended claims includes the various ester forming or condensable derivatives of the acid reactants such as the dimethyl esters thereof as employed in the preparations set out in these patents.
  • sulfo-monomers are those wherein the sulfonate group is attached to an aromatic nucleus such as benzene, naphthalene, biphenyl, or the like, or wherein the nucleus is cycloaliphatic such as in 1 ,4- cyclohexanedicarboxylic acid.
  • composition may include a sulfonated hydrotrope.
  • hydroptropes include, for example, xylene sulfonate or an ionomer, chosen from, for example, sulfonated polyamides and sulfonated polystyrenes.
  • a "hydrotrope" as used herein refers to an organic substance that increases the solubility of surfactants and other substances in an aqueous solution.
  • Hydrotropes are not surfactants; they do not adsorb onto the surface or interface and do not form micelles.
  • Additives to the composition may comprise 100 parts-per-million (ppm) to 99 weight percent of an alkali or acid of organic or inorganic origin to include ammonium hydroxide, quaternary hydroxides or tetra-alkyl ammonium hydroxides or mixed alkyl/aryl ammonium hydroxide, such as tetramethyl ammonium hydroxide (TMAH), tetraethyl ammonium hydroxide (TEAH), and benzyltrimethyl ammonium hydroxide (BTMAH), amines such as triethylene tetramine, alkanolamines that include monoethanolamine,
  • TMAH tetramethyl ammonium hydroxide
  • TEAH tetraethyl ammonium hydroxide
  • BTMAH benzyltrimethyl ammonium hydroxide
  • amines such as triethylene tetramine, alkanolamines that include monoethanolamine
  • KTB potassium tertiary butyl hydroxide
  • MSA methanesulfonic
  • TSA toluenesulfonic
  • DBSA dodecylbenzene sulfonic acid
  • an inhibitor defined as a protecting agent for substrate composition may include chelating, complexing, or reducing agents, comprising at least one of the known varieties, including benzylic hydroxides such as catechol, triazoles, imidazoles, borates, phosphates, and alkyl or elemental silicates, ethylenediaminetetraacetic acid, diethylenetriaminepentaacetic acid, nitrilotriacetic acid, and 2,4-pentanedione, reducing sugars, hydroquinones
  • hydroxylamines, or vanillin and a surfactant chosen from one or more of the known varieties, including nonionic nonyl-phenols and nonyl-ethoxylates, nonionic Triton and PEG-based surfactants, anionic forms that include alkyl- sulfonates, phosphate esters, succinates, sodium sulfonated dodecylbenzene, and fluorinated systems and cationic forms that include quaternary
  • the cleaning composition of the present disclosure can be semi- aqueous or non-aqueous. Water may be added in any amount to achieve the desired cleaning composition. Exemplary compositions may include water in an amount from 5 weight % to 80 weight %, for instance from 10 weight % to 80 weight %, for instance 20 weight % to 80 weight %.
  • the cleaning composition includes at least one organic solvent at a weight percent ranging from 0.5% to 99.0%, at least one sulfonated polymer or monomer at weight percent ranging from 0.5% to 99.0%, and at least one additive that enhances cleaning performance at a weight percent ranging from 0.01 % to 99.0%.
  • the cleaning composition includes the solvent at a weight percent ranging from 30% to 95 %, the monomer or polymer at a weight percent ranging from 0.25% to 60%, and the additive at a weight percent ranging from 2% to 60%.
  • the composition may also include an inhibitor that acts as a protecting agent for the substrate composition.
  • the inhibitors include chelating, complexing, or reducing agents, comprising one or more of the known varieties, including benzylic hydroxides such as catechol, triazoles, imidazoles, borates, phosphates, and alkyl or elemental silicates,
  • ethylenediaminetetraacetic acid diethylenetriaminepentaacetic acid, nitrilotriacetic acid, and 2,4-pentanedione, reducing sugars, hydroquinones, glyoxal, salicylaldehyde, fatty acids such as citric and ascorbic acid, hydroxylamines, or vanillin.
  • the composition includes at least one compound that includes a nitrogen substituent that will react with at least one ester on the polymer or monomer to form an amide.
  • the at least one compound that includes a nitrogen substituent is an additive.
  • the at least one compound that includes a nitrogen substituent is an inhibitor.
  • the at least one compound that includes a nitrogen substituent reacts with two esters on the polymer or monomer to form a diamide in a composition of the present disclosure.
  • the at least one compound that includes a nitrogen substituent reacts with one ester on the polymer or monomer to form a mono-amide.
  • the at least one compound that includes a nitrogen substituent reacts with at least one diester on the polymer or monomer to form a composition comprising at least one diester, mono-amide, and diamide.
  • the at least one compound that includes a nitrogen substituent is an amine.
  • Exemplary amines include, but are not limited to, triethylene tetramine, alkanolamines that include monoethanolamine, monoisopropanolamine, diglycolamine.
  • the at least one compound that includes a nitrogen substituent is nitric acid.
  • the at least one compound that includes a nitrogen substituent is chosen from triazoles, imidazoles, ethylenediaminetetraacetic acid, diethylenetriaminepentaacetic acid, nitrilotriacetic acid, hydroxylamines, and mixtures thereof. Nitrogen-containing compounds suitable for use herein would be readily apparent to one of ordinary skill in the art. In one
  • the at least one compound that includes a nitrogen substituent is present at a weight percent ranging from 0.01 % to 99.0%.
  • compositions according to the present disclosure may also include a surfactant including at least one of the known varieties, including nonionic nonyl-phenols and nonyl-ethoxylates, nonionic Triton and PEG-based surfactants, anionic forms that include alkyl-sulfonates, phosphate esters, and succinates, and fluorinated systems and cationic forms that include
  • Contact may be made to the substrate by the composition via bath submersion or using a coating practice.
  • spin coating may be a method of choice used to apply coatings to a substrate.
  • other methods exist to include spray coating, spray-spin coating and slit coating for large substrates as in FPD manufacturing.
  • the objective is to apply the composition in a manner to achieve complete coverage.
  • Many coating applications are concerned with a high degree of uniformity.
  • the application of the coating is performed in a manner such that good control over the volume of the stripping composition applied to the substrate is maintained, for example to minimize the total volume of the stripping composition.
  • the coating can be up to 800 microns thick, from 200 to 600 microns thick, or from 300 to 400 microns thick.
  • Spin-coating the composition for this disclosure may involve dispensing the material at the center of a substrate, and operating the equipment at a low rate of circular motion speed (i.e. 100 revolutions per min, rpm, or less).
  • Liquid delivery may be done by a static method, whereby the fluid may "puddle” onto the surface.
  • a dynamic method may also be used where the material is dispensed when the substrate is already in motion.
  • the exact conditions of rpm and time may need to be established in such a manner to ensure complete coverage of the substrate with minimal or no waste. There is no need to be concerned with edge bead formation as this condition may be irrelevant to the process objective.
  • spin-speed may be a focus of many apparatus used in the microelectronics industry.
  • Substrate rotation may have a direct affect on these properties and produce different coating results.
  • fluid mobility may be low with minor material loss, however, irregularities in substrate coverage may also occur.
  • high spin- speeds may result in high mobility and high material loss.
  • spin- coating is a standard practice in the industry, coatings of acceptable thickness uniformity may be achieved with a spray-coating practice. Once the coating is completed, heat activation of the process may immediately proceed.
  • Heat application may be conducted through several paths.
  • a simple hot-plate may be used. This requires the substrate to be moved from one location to another.
  • the wafer may remain stationary while heat is applied using a base-chuck or an overhead convective source, e.g. hot metal plate or a radiative source, infrared heater or a combination thereof.
  • a base-chuck or an overhead convective source, e.g. hot metal plate or a radiative source, infrared heater or a combination thereof.
  • the composition and organic resin may be removed by rinsing with a rinsing agent either in an agitated batch or by direct spray contact.
  • the stripping compositions of the disclosure function by maintaining a solvency environment when used on amorphous organic substances such as positive-tone photoresists of the Phost or Novolac varieties.
  • a composition that contains the minimum constituents, including the solvent system and water soluble monomer may be coated and processed at the conditions of the disclosure method.
  • rapid modification including dissolution may occur and diffusion of the photoresist into the composition proceeds rapidly to completion.
  • Additives such as an alkali agent, inhibitor, and surfactant may be used to facilitate good results with highly baked (i.e. >150°C) photoresists.
  • Advantages in using additives contained within the stripping composition may include improved dissolution rates due to saponifying cross-linked photoresist while the inhibitors may protect exposed metal during the stripping and rinsing steps.
  • Organic alkanolamine compounds may be used for basic reactive modification and emulsification of the positive-tone photoresists, to include one or more low molecular weight candidates, for example,
  • the composition may require a strong alkali, namely, a quaternary hydroxide, metal hydroxide, or alkoxide.
  • compositions also apply for removal of negative isoprene (rubber) resist and negative-epoxy (SU-8TM) photoresist.
  • rubber positive photoresist and negative acrylic and polyimide
  • the choice in composition is dependent upon the material to remove.
  • the chemistry is hydrophobic (non-polar) and the cross-linked rubber system does not respond to alkalis, only acids. Rubber photoresists may require aromatic solvents and hydrophobic acids, such as dodecylbenzene sulfonic acid.
  • the chemistry is hydrophilic (polar) and like the rubber photoresists, these systems also may not respond to alkalis.
  • the system is one that incorporates hydrophilic acids such as methanesulfonic acid (MSA) or sulfuric acid.
  • hydrophilic acids such as methanesulfonic acid (MSA) or sulfuric acid.
  • MSA methanesulfonic acid
  • sulfuric acid may contain the water soluble polymer or monomer, to facilitate proper rinsing following modification including dissolution and/or release of the photoresist.
  • the organic substance was applied in the manner of a coating using a Brewer Science, Inc. CB-100 coater and following standard protocol for applying the liquid form of the polymer material to the inorganic substrate.
  • a soft bake step for a short 60 second hot plate bake at 100 °C.
  • the material was exposed to ultraviolet light of a broad-band type emitting at 365 nanometers and of a high exposure dose of 0.12W/cm 2 -sec, for an excessive period of 30 minutes.
  • the wafer was post-exposure baked at a predetermined hard bake temperature and time depending on the resist. Once the wafer samples have been prepared, they are staged for experimentation.
  • the experiments in Examples 2-5 were all conducted identical to each other using the same wafers and handling practices. Each wafer was staged in the work station where the disclosure may be
  • compositions of the disclosure are prepared ahead of time and also set aside.
  • the inventive method was tested by applying the composition of interest to a portion of the wafer surface. The wafer was then immediately transferred to a hot plate that had been preset at the desired processing temperature. Once the wafer was set onto the hot plate, a digital timer was started. Once the pre-established time has expired, the wafer was removed and immediately rinsed with distilled, deionized, or demineralized water from a wash bottle. The rinsed wafer was observed and set aside to dry. Additional observations were taken and the results were recorded.
  • Examples 1 -7 introduction of the monomer was obtained by the addition of a premade stock solution.
  • These stock solutions were comprised of a hydrophilic solvent (Component A) and a water soluble or water dispersible or water dissipatable monomer (Component B).
  • the monomers chosen were selected from various multifunctional sulfomonomers containing at least one metal sulfonate group attached to an aromatic nucleaus that are water soluble or water dispersible or water dissipatible determined to be at or greater than 0.5 weight percent concentration (i.e. monomer in water).
  • Such monomers are well known to those skilled in the art and include such monomers as the lithium and sodium salts of diethylene glycol diesters of 5- sulfoisophthalic acid, ethylene glycol diesters of 5-sulfoisphthalic acid, alkyl diesters of 5-sulfoisophthalic acid, aryl diesters of 5-sulfoisophthalic acid, and 5-sulfoisophthalic acid.
  • Other monomers include salts of phenolsulfonates, alkoxybenzenesulfonates, and aryloxybenzenesulfonates.
  • the tables include description of the cleaning composition by weight percent of the components and the cleaning conditions employed to test effectiveness of the cleaning process.
  • the term “Clean” means complete removal of photoresist resin by visual inspection
  • “Not Clean” means partial removal of photoresist resin by visual inspection
  • “No Change” means no indication that photoresist resin was attacked under process conditions by visual inspection.
  • Solutions of the sodium salt of the diethylene glycol diester of 5-sulfoisophthalic acid (I) in diethylene glycol (DEG) are used to illustrate the invention in the following examples.
  • Example 3 illustrates the use of other 5-sulfoisophthalic monomers.
  • sulfopolyester introduction of the sulfopolyester was obtained by the addition of a premade stock solution.
  • stock solutions were comprised of a hydrophilic solvent (Component A) and a water soluble or water dispersible or water dissipatable polymer (Component B).
  • the polymers chosen were various sulfopolyesters of different glass transition temperatures and viscosities of both the linear and branched varieties. Such polymers are well known to those skilled in the art and are available, for instance, from Eastman Chemical Company under the tradename of Eastman AQ POLYMERS.
  • such sulfopolyesters can be dissolved, dispersed or otherwise dissipated in aqueous dispersions, for instance, at temperatures of 80°C or less.
  • polyesters considered as candidates for the invention include, but are not limited to, Eastman AQ 38S POLYMER, Eastman AQ 48 ULTRA POLYMER, Eastman AQ 55 S POLYMER, EastONE S85030 COPOLYESTER, Eastman ES-100 WATER-DiSPERSiBLE
  • Bod Solutions are those in which either the solids were insoluble in the solvents under the preparation conditions or the solution formed was unstable in the short term.
  • Disqualified Solutions are those in which a solution of the same polymer and solvent paring had previously formed a bad solution at a lower solids loading.
  • Questionable Solutions are those in which the solutions formed were either extremely viscous or exhibited signs of potential long-term instability, but might be of value for further study.
  • composition comprising diethylene glycol ethyl ether and Eastman
  • a composition comprising 20 wt % Eastman AQ 48 and 80 wt% diethylene glycol ethyl ether (Eastman DE SOLVENT) was selected as the suitable standard composition to be used in developing additive blends to target more exotic and more difficult to remove photoresists.
  • This stock solution comprised 30% of the final solutions used to treat wafers in Examples 10-14, yielding 6 wt% sulfopolyester and 24 wt% DE SOLVENT in all of these solutions.
  • examples 10-14 are to demonstrate how one skilled in the art may approach development of a composition according to this invention that is suitable for removal of an organic residue. Neither the selection of this standard composition for further studies nor the specific examples that follow are intended to limit the scope of this invention.
  • Table 4 contains the results from a cleaning study conducted for Novolac resin coated as described in Table 1 . Resin was cured for 15 minutes at 200 °C. Process temperatures for the cleaning stage were 100°C, 150°C, and 200 °C.
  • Table 5 contains the results from a cleaning study conducted for Phost resin coated as described in Table 1 . Resin was cured for 15 minutes at 200 °C. All cleaning compositions are comprised of 6 wt% sulfopolyester, 24 wt% DE Solvent, with the remaining 70 wt% being comprised of two additives as noted in Table 6. Process temperatures for the cleaning stage were 100°C, 150°C, and 200 °C.
  • Table 6 contains the results from a cleaning study conducted to test compositions containing 20 weight percent 5-sodiosulfoisophthalic acid (SSIPA), 5-lithiosulfoisophthalic acid (LiSIPA), the ethylene glycol diester of 5- sodiosulfoisophthalic acid (EGSIPA diester), and the diethylene glycol ethyl ether diester of 5-sodiosulfoisophthalic acid (DESI PA diester)as cleaning compositions to remove Novolac and polyhydroxystyrene resins. Resins were cured for 15 minutes at 200 °C. Process temperatures for the cleaning stage were 100°C for 60 seconds.
  • SSIPA 5-sodiosulfoisophthalic acid
  • LiSIPA 5-lithiosulfoisophthalic acid
  • EVSIPA diester ethylene glycol diester of 5- sodiosulfoisophthalic acid
  • DESI PA diester diethylene glycol
  • Table 6 indicates compositions of ethylene glycol, diethylene glycol and diethylene glycol ethers containing lower molecular weight monomeric salts of 5-sulfosulfonic acid and related esters perform well as cleaning compositions to Phost resin, but little success cleaning Novolac resin.
  • Table 7 contains the results from a cleaning study conducted for polyimide resin coated as described in Table 1 . Resin was cured for 15 minutes at 150 °C. Process temperatures for the cleaning stage were 100 °C, 150°C, and 200 °C at various durations of time. Results are tabulated below. Table 7
  • Example 4 suggests that cured polyimide resin is more difficult to clean than either Phost or Novolac resin. Only the use of highly basic materials such as 2-pyrolle, MEA and KTB in the additive component produced desirable results on low temperature cleaned wafers. No evidence of attack is noted unless the temperature of the cleaning process is elevated to 200°C.
  • Table 8 contains the results from a cleaning study conducted for acrylic resin coated as described in Table 1 . Resin was cured for 1 5 minutes at 1 50 °C. Process temperatures for the cleaning stage were 1 00 °C, 1 50 °C, and 200 °C. Results are tabulated below. Table 8
  • Example 5 suggests that cured acrylic resin is more difficult to clean than either Phost or Novolac resin but requires conditions similar to polyimide resin for satisfactory removal of resin.
  • Table 9 contains the results from a cleaning study conducted for Isoprene resin coated as described in Table 1 . Wafers were cured for 15 minutes at 150 °C. Process temperatures for the cleaning stage were 100 °C, 150°C, and 200 °C.
  • composition into the resin composition into the resin.
  • wafers having a cured photoresist layer as described above were coated with formulations described in art as useful for removing photoresist by a known bath or soaking dissolution process.
  • Formulations were prepared according to Table 10 and applied to isoprene coated wafer pieces cured 15 minutes at 150°C per Table 1 .
  • the wafer pieces were immediately heated to the target temperature for 60 seconds, and rinsed with water. The effectiveness of photoresist removal was judged by visual inspection.
  • Formulations were prepared according to Table 1 1 and applied to acrylic coated wafer pieces cured 15 minutes at 150°C per Table 1 . The wafer pieces were immediately heated to the target temperature for 60 seconds, and rinsed with water. The effectiveness of photoresist removal was judged by visual inspection. Table 11 : Cleaning Results for Acrylic Resin
  • Tables 1 0 and 1 1 indicate many different formulations may be used to effect photoresist removal according to the method of the invention. It should be noted that high temperatures may cause the formation of a water insoluble haze or crust in some cases. This can be mitigated by temperature optimization.
  • compositions containing other water soluble, dispersible, or dissipatable polymers did not perform nearly as well. In general, these other polymers were far less soluble in the chosen solvents. Process conditions for achieving the solutions again varied depending on the polymer and solvent pairing and the solids loading. In most cases, the solutions were heated to a temperature ranging from 120°C for 30 minutes up to 180°C for 80 minutes; however, the polyvinyl pyrollidone and the dendritic polyester were both noticeable exceptions that required far less heating. The results of the solubility study are tabulated below.
  • Table 12 Summary of Stock Solutions Not Containing a
  • compositions judged to have excellent cleaning performance were deemed as passing. In many cases, only the 10 wt% solids blends were tested; however, solutions with up to 40 wt% solids of the polyvinyl pyrollidone were also tested because that particular polymer was so soluble in every solvent tested. With the exception of xylene sodium sulfonate, the results were almost wholly negative, and further testing was deemed unnecessary. The results of the performance screening are summarized below.
  • compositions containing sulfonated polyesters exhibited much better performance dissolving PHOST and Novolac photoresist.
  • the compositions containing sulfonated polyesters were significantly preferable to those containing any of the other polymers considered, and a single composition from those containing sulfonated polyesters was chosen for future testing.
  • Table 12 contains the results from a cleaning study conducted for PHost resin coated as described in Table 1 . Resin was cured for 15 minutes at 200 °C. All cleaning compositions are comprised of 6 wt% sulfopolyester, 24 wt% DE SOLVENT, with the remaining 70 wt% being comprised of two additives as noted in Table 14. Process temperatures for the cleaning stage were 100°C, 150°C, and 200 °C.
  • Table 13 contains the results from a cleaning study conducted for Novolac resin coated as described in Table 1 . Resin was cured for 15 minutes at 200 °C. All cleaning compositions were comprised of 6 wt% sulfopolyester, 24 wt% DE Solvent, with the remaining 70 wt% being comprised of two additives as noted in Table 15. Process temperatures for the cleaning stage were 100°C, 150°C, and 200 °C.
  • Table 13 suggests that most additive combinations are suitable for cleaning cured Novolac resin from silica substrates; however, some difficulty is encountered when cleaning at 200° C. Acidic solutions do not produce desirable results especially on highly cured novolac resin, with phosphoric acid containing compositions failing in nearly every attempt.
  • Table 14 contains the results from a cleaning study conducted for acrylic resin coated as described in Table 1 . Resin was cured for 15 minutes at 150°C. All cleaning compositions were comprised of 6 wt% sulfopolyester, 24 wt% DE Solvent, with the remaining 70 wt% being comprised of two additives as noted in Table 16. Process temperatures for the cleaning stage were 100°C, 150°C, and 200 °C. Results are tabulated below.
  • Table 1 5 contains the results from a cleaning study conducted for Polyimide resin coated as described in Table 1 . After the soft bake, wafers were cured for 15 minutes at 200 °C followed by an additional 30 minutes at 350 °C. All cleaning compositions were comprised of 6 wt% sulfopolyester, 24 wt% DE Solvent, with the remaining 70 wt% being comprised of three additives as noted in Table 1 7. Process temperatures for the cleaning stage were 1 00 °C, 150 °C, and 200 °C. Results are tabulated below.
  • Table 16 contains the results from a cleaning study conducted for Isoprene resin coated as described in Table 1 . Wafers were cured for 15 minutes at 150°C. All cleaning compositions were comprised of 6 wt% sulfopolyester, 24 wt% DE Solvent, with 68 wt% being comprised of two additives as noted in Table 15 and 2 wt% being comprised of a surfactant such as ZelecTM UN (alkoxyphosphate ester surfactant). Process temperatures for the cleaning stage were 100°C, 150 °C, and 200 °C.
  • the cleaning composition presented in Table 18 was designed to be significantly hydrophobic (hydrocarbon) to allow penetration of the cleaning composition into the resin.
  • the compositions shown here represent a key condition that is necessary to affect proper performance. Elevated temperatures were found necessary to adequately remove the rubber-like isoprene photoresist from the inorganic substrate in 60 seconds.

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Abstract

L'invention concerne des compositions et des procédés utiles pour éliminer des substances organiques de substrats, par exemple, de substrats de dispositifs électroniques comme les puces microélectroniques et les affichages sur écrans plats. L'invention concerne des procédés qui appliquent un volume minimum d'une composition sous forme d'un revêtement au substrat inorganique où une chaleur suffisante est ajoutée et immédiatement rincée à l'eau pour obtenir l'élimination complète. Les compositions et les procédés peuvent être appropriés pour éliminer et dissoudre complètement les résines photosensibles des variétés positive et négative ainsi que les polymères thermodurcissables des dispositifs électroniques.
EP11761209.3A 2010-09-27 2011-09-14 Compositions polymères ou monomères comprenant au moins un monoamide et/ou au moins un diamide pour éliminer des substances de substrats et procédés d'utilisation desdites compositions Withdrawn EP2622027A1 (fr)

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US12/891,698 US20120073607A1 (en) 2010-09-27 2010-09-27 Polymeric or monomeric compositions comprising at least one mono-amide and/or at least one diamide for removing substances from substrates and methods for using the same
PCT/US2011/051489 WO2012044460A1 (fr) 2010-09-27 2011-09-14 Compositions polymères ou monomères comprenant au moins un monoamide et/ou au moins un diamide pour éliminer des substances de substrats et procédés d'utilisation desdites compositions

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EP2622027A1 true EP2622027A1 (fr) 2013-08-07

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EP (1) EP2622027A1 (fr)
JP (1) JP2014503604A (fr)
KR (1) KR20130102600A (fr)
CN (1) CN103119105A (fr)
SG (1) SG188999A1 (fr)
TW (1) TW201229233A (fr)
WO (1) WO2012044460A1 (fr)

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CN103631101B (zh) * 2012-08-22 2018-01-09 得凯莫斯公司弗罗里达有限公司 包含含氟表面活性剂的光阻剥除剂
KR102032321B1 (ko) * 2012-11-13 2019-10-15 동우 화인켐 주식회사 얼룩 발생 방지용 레지스트 박리액 조성물
CN103286091B (zh) * 2013-06-09 2017-09-19 京东方科技集团股份有限公司 一种基板的清洗方法
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JPWO2017195453A1 (ja) * 2016-05-13 2019-04-04 株式会社Ｊｃｕ レジストの剥離液
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JP6927619B2 (ja) * 2018-01-19 2021-09-01 エムティーアイ カンパニー, リミテッドMti Co., Ltd. ダイシング工程用保護コーティング剤剥離用剥離剤
JP2020094152A (ja) * 2018-12-14 2020-06-18 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ 基板洗浄液、これを用いる洗浄された基板の製造方法およびデバイスの製造方法
CN110484377B (zh) * 2019-07-22 2021-03-23 天津登特科技有限公司 一种uv树脂清洁剂及其制备工艺与使用方法
CN112859552B (zh) * 2021-02-04 2024-01-05 上海新阳半导体材料股份有限公司 一种氧化钒缓蚀含氟剥离液的应用
CN113861747B (zh) * 2021-08-31 2023-04-07 广东东明新材科技有限公司 一种脱漆剂及其制备方法
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US20120073607A1 (en) 2012-03-29
TW201229233A (en) 2012-07-16
SG188999A1 (en) 2013-05-31
KR20130102600A (ko) 2013-09-17
JP2014503604A (ja) 2014-02-13
WO2012044460A1 (fr) 2012-04-05
CN103119105A (zh) 2013-05-22

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