EP2599130A2 - Procédé de fabrication d'une électrode transparente, procédé de fabrication d'une cellule photovoltaïque ainsi qu'agencement - Google Patents

Procédé de fabrication d'une électrode transparente, procédé de fabrication d'une cellule photovoltaïque ainsi qu'agencement

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Publication number
EP2599130A2
EP2599130A2 EP11738227.5A EP11738227A EP2599130A2 EP 2599130 A2 EP2599130 A2 EP 2599130A2 EP 11738227 A EP11738227 A EP 11738227A EP 2599130 A2 EP2599130 A2 EP 2599130A2
Authority
EP
European Patent Office
Prior art keywords
layer
substrate
metal particles
electrically conductive
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP11738227.5A
Other languages
German (de)
English (en)
Inventor
Kun Ho Ahn
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Schueco Tf & Co KG GmbH
Schueco TF GmbH and Co KG
Original Assignee
Schueco Tf & Co KG GmbH
Schueco TF GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Schueco Tf & Co KG GmbH, Schueco TF GmbH and Co KG filed Critical Schueco Tf & Co KG GmbH
Priority to EP11738227.5A priority Critical patent/EP2599130A2/fr
Publication of EP2599130A2 publication Critical patent/EP2599130A2/fr
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Definitions

  • the invention relates to a method for producing a transparent electrode on a substrate, in particular for a photovoltaic cell. Furthermore, the invention relates
  • the invention further relates to an arrangement for a
  • Photovoltaic cell Photovoltaic modules, which are also referred to as solar modules, are used to utilize the energy contained in sunlight. Photovoltaic modules usually comprise a plurality of photovoltaic cells electrically coupled to one another, which in operation, via the photoelectric effect, contain the light contained in the light
  • Photovoltaic cells have one or more pn junctions. These are each formed from a p-type and an n-type layer. An i-layer may be arranged between the p-layer and the n-layer, that is to say one essentially
  • Photovoltaic cells include, for example, microcrystalline silicon layers, amorphous silicon layers, polycrystalline silicon layers, and / or other semiconductors.
  • electrical contacting of the semiconductor layers are in photovoltaic cells transparent electrically conductive
  • TCO transparent conductive oxides
  • Photovoltaic cells with a good effect can be realized. Furthermore, it is desirable to provide an arrangement for a photovoltaic cell, which allows a good efficiency of a photovoltaic cell. In addition, it is desirable to provide arrangements with a photovoltaic cell that have good efficiency.
  • Method for producing a transparent electrode on a substrate providing the substrate.
  • a first transparent electrically conductive layer is applied to the
  • a metal oxide layer is deposited on a surface of the electrically conductive layer facing away from the substrate.
  • the metal oxide layer is divided into a plurality of metal particles by a thermal one Decompose.
  • a second transparent electrically conductive layer is deposited on the metal particles.
  • Such a substrate with a transparent electrode comprising metal particles is in particular a carrier substrate with front electrode for thin-film or
  • Thin film photovoltaic cells usable The p, i and n layers of the photoactive layer stack of the photovoltaic cell are then subsequently deposited on the second electrically conductive layer.
  • the substrate is
  • the substrate is transparent, for example from a glass.
  • the substrate is opaque, for example, a sheet.
  • the transparent electrode on the substrate for large-area substrates of greater than 1.4 m ⁇ , in particular greater than 5.5 m ⁇ , for example, 5.72 m ⁇ , applicable, so that a uniform distribution of the metal particles over the entire surface of the substrate can be realized. Furthermore, the method makes it possible to produce metal particles of approximately the same size over the entire surface of the substrate.
  • the plurality of metal particles has an average diameter of less than 150 nm, in particular an average diameter of less than 100 nm, for example less than 70 nm.
  • the metal oxide layer is deposited by sputtering.
  • the metal oxide layer is thus deposited by sputter deposition (sputter deposition), in which a metal is used as target, so that the metal oxide layer contains, for example, silver, gold and / or platinum.
  • sputter deposition sputter deposition
  • Metal particles is in other aspects less than or equal to 500 ° C.
  • the temperature is for
  • thermal decomposition greater than 200 ° C, especially greater than 250 ° C.
  • the thermal decomposition temperature is greater than 300 ° C and less than or equal to 400 ° C.
  • the thermal decomposition temperature is less than or equal to 450 ° C, for example less than or equal to 380 ° C, especially less than or equal to 350 ° C.
  • oxygen is supplied according to other aspects.
  • Metal oxide layer controlled By the proportion of oxygen with respect to the metal, the size of the metal particles is controllable according to aspects. Thus, it is possible to produce metal particles whose average diameter is less than or equal to 100 nm. The size of the metal particles is particularly dependent on the ratio of oxygen to
  • the size of the metal particles is also dependent on the temperature during thermal decomposition, whereby the metal oxide layer is decomposed into the metal particles. According to further aspects, subsequent to the thermal decompression, before the second transparent electrically conductive layer is deposited, a so-called
  • Metal particles are warmed and kept at a constant temperature and subsequently cooled. As a result, defined predetermined properties of the metal particles are achieved. Material properties of the metal oxide layer are changed so that the metal particles are different
  • Plasmons are called the quantized density variations of charge carriers in semiconductors, metals and insulators. Plasmons can also be considered as electrons that oscillate relative to the positive ions. The electrons oscillate, for example, with the plasma frequency. Plasmons are the quantization of this natural frequency. In aspects, the excited plasmons, in use, re-apply their energy to the photoactive layer stack disposed on the electrode. There the energy is in
  • photoactive layer stack is possible in several ways.
  • the energy is like that
  • the size of the metal particles is predetermined as a function of the photoactive layer stack, for example of the material of the photoactive layer
  • the material of the metal particles is given as a function of the photoactive layer stack, for example of the material of the photoactive layer
  • the transfer of energy from the plasmons to the photoactive layer stack disposed on the electrode results in a photocurrent. Consequently, the photocurrent or efficiency of the
  • Photovoltaic cell increased by the metal particles in relation to conventional photovoltaic cells without metal particles.
  • the metal particles to dispense with a roughening of the electrode, which is conventionally used for light scattering, since the metal particles provide a sufficiently high yield of the incoming light.
  • the metal particles for the production of a
  • Photovoltaic cell further layers on the second
  • Reverse reflector layer and / or a back electrode layer.
  • the metal oxide layer is deposited on a first sub-layer of the back reflector layer which is deposited on the first reflector
  • photoactive layer stack is applied.
  • Metal oxide layer is divided by thermal decomposition into a plurality of metal particles and applied a second sub-layer of the back reflector layer. Thus, the metal particles are arranged in the back reflector layer.
  • tandem junction photovoltaic cells which have two photoactive layer stacks with respective p-i-n layers, according to further aspects, a first
  • Layer stack is deposited.
  • a metal oxide layer is deposited on the first sub-layer of the intermediate layer.
  • the metal oxide layer is replaced by a thermal
  • Decomposing is divided into a plurality of metal particles and a second sub-layer of the intermediate layer is applied to the metal particles.
  • Layer stack is applied to the metal particles.
  • the metal particles into at least one of the layers front electrode, intermediate layer or back reflector layer. It is also possible to have the metal particles in two of the layers or in all of them.
  • triple cells which have three photoactive layer stacks one above the other, two intermediate layers with respective metal particles are provided in each case, which are each arranged between two of the three photoactive layer stacks.
  • the metal particles are each of the photoactive
  • Layer stack through a thin layer has a thickness of less than or equal to 50 nm, separated. This avoids direct contact between the photoactive layer stack and the metal particles. This is in particular a good transfer of energy from the
  • FIG. 1 is a schematic representation of a sectional view of an optoelectronic device according to an embodiment
  • Figures 2A and 2B is a schematic representation of the
  • FIG. 3 is a schematic representation of the plasmon effect
  • FIG. 4 shows a flow chart of a method for producing a photovoltaic cell according to an embodiment
  • FIG. 5 is a schematic representation of a sectional view of an assembly at a time of manufacture
  • FIG. 6 shows a schematic representation of a sectional view of an arrangement according to an embodiment
  • Figure 7 is a schematic representation of a sectional view of an arrangement according to an embodiment.
  • Figure 8 is a schematic representation of a sectional view of an arrangement according to an imple mentation form.
  • Figure 1 shows a schematic representation of a
  • the transparent electroconductive electrode 110 is layered in the main direction during the
  • the main direction of the incident radiation during operation is the X-direction of FIG.
  • a photoactive layer stack 120 is arranged on the transparent electrically conductive electrode 110, the photoactive layer stack 120 is arranged on the transparent electrically conductive electrode 110.
  • a back reflector layer 130 is arranged on the photoactive layer stack 120. Through the back reflector layer 130 is
  • a further electrode 140 is arranged, the so-called
  • the substrate 101 is as transparent as possible from embodiments for sunlight.
  • the substrate 101 is particularly transparent to light in the visible spectrum and in the infrared range and has a transparency of greater than 85% in a wavelength range of 400 nm to 1200 nm.
  • the substrate comprises, for example, glass, in particular iron-poor Flat glass, silicate glass or rolled glass.
  • the substrate 101 is configured to support the layer stack disposed on the substrate 101.
  • the photoelectric layer stack 120 comprises according to
  • Embodiments form a p-doped layer and an n-doped layer and a substantially intrinsic layer disposed between the p-doped layer and the n-doped layer.
  • the photoactive layer stack is extended over a wide area.
  • Ausgestive forms is the n-doped layer on the
  • the substantially intrinsic layer is undoped or very lightly doped compared to the adjacent p- or n-doped layers.
  • the substantially intrinsic layer is arranged to absorb light and to photoelectrically convert it.
  • the essentially intrinsic layer is designed to absorb energy and convert it into electrical energy.
  • the photoelectric device is arranged to absorb, in particular, light in a wavelength range of 400 to 1200 nm.
  • the substrate 101 is opaque, ie substantially non-transparent to light in a wavelength range from 400 nm to 1200 nm
  • Layer sequence according to embodiments is opaque substrate, arranged thereon an optional electrical
  • Insulation layer optionally arranged on it
  • Rear reflector layer optionally arranged on the metallic back contact, thereon arranged the electrically conductive layer with metal particles, thereon the photoactive layer stack 120, arranged thereon
  • electrically conductive layer 110 with metal particles is electrically conductive layer 110 with metal particles.
  • another photoactive one is
  • Layer 110 arranged.
  • three or more photoactive layer stacks are arranged between the electrically conductive layer 130 and the electrically conductive layer 110.
  • the back reflector layer 130 and then the return electrode 140 arranged on the photoactive layer stack 120 are arranged
  • At least the further photoactive layer stack 160 (FIG. 7) is arranged between the electrode 110 and the back reflector layer 130 or the electrode 140.
  • the transparent electrically conductive layer 110 includes, for example, zinc oxide. According to further embodiments, the transparent electrode 110 comprises another
  • the transparent electrically conductive layer 110 has good optical transmissivity and good electrical conductivity.
  • the photoactive layer stack 120 comprises in particular
  • the photovoltaic cell 100 is a so-called thin-film or thin-film solar cell executed.
  • the layers of the photovoltaic cell 100 have a thickness in the X direction in the range of a few 10 nm to a few micrometers.
  • the photoactive layers together with the electrodes and optionally the reflection layer over a large area on the substrate 101st
  • Solar cells also called cell strips
  • solar modules are in the range of millimeters to centimeters.
  • Current collectors are usually applied to the outer cell strips, via which the thin-film solar module is connected and the generated electrical power can be dissipated.
  • the surface 116 facing away from the substrate of the transparent electrode 110 has a rough texture formed as homogeneously as possible, so that the surface 116 has a good throwing power for the incident light in a wavelength range of 400 nm to 1200 nm.
  • the effectiveness of the photoactive layer stack 120 can be increased because the path of the incident radiation through the photoactive layer stack 120 is increased on average, the incident light better in the photoactive
  • Layer stack 120 is coupled and a higher
  • the surface 116 of the transparent electrode 110 is smooth. On the rough texturing of the surface 116 is in this Out of forms of execution. As will be explained in more detail below, it is still possible according to the invention, a high
  • the transparent electrode has a plurality of
  • the metal particles 112 are arranged along the surface 116.
  • the metal particles 112 are spaced from the photoelectric layer stack 120 and have no direct contact with the photoactive
  • Electrode 110 is arranged.
  • Conductive sub-layer 113 has a thickness 117 ( Figure 6) in the X direction of less than 50 nm, in particular, the thickness 117 is less than or equal to 40 nm, for example less than or equal to 35 nm.
  • a transparent electrically conductive sub-layer 111 of the electrode 110 is formed between the metal particles 112 and the substrate 101.
  • the metal particles 112 are surrounded by material of the electrically conductive layer 110.
  • the electrically conductive sublayer 111 and the electrically conductive sublayer 113 each have a transparent electrically conductive oxide and together enclose the metal particles 112.
  • the main propagation direction of the areally extended
  • the area in which the metal particles 112 are arranged is substantially rectified to the areal extent of the surface 102 and the surface 116.
  • the metal particles 112 are substantially spherical. They can also have a different shape, for example disk-shaped.
  • the metal particles 112 have a
  • the respective size of the metal particles is in each case less than or equal to 120 nm in cross section, for example less than or equal to 80 nm, in particular less than or equal to 70 nm.
  • the metal particles 112 are arranged on the electrode 110 so that they are closer to the surface 116 and thus closer are arranged on the photoactive layer stack 120 than on the surface 102 and thus the substrate 101.
  • the metal particles 112 each comprise, for example, silver. In other embodiments, the metal particles each comprise gold. In other aspects, the
  • Metal particles 112 each platinum.
  • the incident radiation is modified on the metal particles 112 and then energy is transferred from the radiation to the photoactive layer stack 120.
  • the average path of the incident radiation R on the metal particles 112 By modifying the incident radiation R on the metal particles 112, the average path of the incident radiation R on the metal particles 112, the average path of the incident radiation R on the metal particles 112, the average path of the incident radiation R on the metal particles 112, the average path of the incident radiation R on the metal particles 112, the average path of the
  • Metal particles 112 modified by the plasmon effect.
  • Figure 2A shows schematically the incident radiation R, the respective localized surface plasmons on the
  • Metal particle 112 stimulates.
  • the stimulus causes a field E, which is different at the time t compared to the time t + At.
  • the absorption of the radiation R leads to the formation of plasmons.
  • the energy of the plasmons is transferred to the photoactive layer stack 120 and converted there into electrical energy. This will be the
  • the absorption probability is compared to conventional photovoltaic cells by the arrangement of the metal particles 112 and the thereof
  • Figure 2B shows a form of non-radiative
  • FIG. 3A shows a near-field distribution of metal particles 112 of silver with a low density.
  • FIG. 3B shows a near-field distribution of the metal particles 112 made of silver with a high density of metal particles 112.
  • FIG. 4 schematically shows a sequence of a method for producing a photovoltaic cell according to embodiments.
  • step 201 the substrate 101 is provided and the electrically conductive transparent sub-layer 111 is deposited on the substrate 101. According to embodiments, a rough surface of the
  • Partial layer 111 is formed. According to further embodiments, a surface which is as flat and uniform as possible (FIG. 5) of the partial layer 111 is formed. Subsequently, in step 202, a metal oxide layer 115 (FIG. 5) is applied to the surface 114 of the sublayer 111.
  • the metal oxide layer 115 is replaced by a
  • the metal oxide layer 115 comprises according to
  • At least one of gold, silver and silver is at stake
  • step 202 during the
  • Depositing the metal oxide layer 115 introduced gaseous oxygen into the deposition chambers. By means of the amount of oxygen supplied, the metal density per area of the metal oxide layer 115 can be controlled.
  • the thickness in the X direction of the layer 115 is controlled according to specifications. The metal density and the thickness are controlled in step 202 so that the metal particles 102, the
  • step 203 a thermal decomposition is performed. In other aspects, an annealing process is performed. The metal oxide layer 115 is heated in step 203 and cooled again. In step 203, the
  • Metal oxide layer 115 divided into the plurality of metal particles 112.
  • the metal oxide layer 115 is decomposed into the plurality of metal particles 112.
  • the metal particles are formed of the metal oxide layer 115. The splitting of the metal oxide layer 115 and the formation of the
  • Metal particulate 112 occurs at a temperature of less than or equal to 500 ° C.
  • the division of the metal oxide layer 115 takes place at a temperature such that the
  • the transparent electrically conductive layer 113 is deposited.
  • the layer 113 is deposited by sputter deposition.
  • Layer 113 is deposited to cover the metal particles 112.
  • the surface 116 (FIG. 6) of the layer 113 is spaced apart from the metal particles 112, so that the
  • Metal particles 112 do not reach outside the electrode 110.
  • the metal particles 112 have no contact with the surface 116.
  • the photoactive layer stack 120 is deposited on the surface 116, in particular by means of plasma enhanced chemical vapor deposition (PECVD).
  • PECVD plasma enhanced chemical vapor deposition
  • Figure 5 shows a schematic representation of the substrate 101 with the layer 111 and the layer 115 according to a
  • the flat expanded metal oxide layer 115 is applied on the side facing away from the substrate 101 surface 114 of the first transparent electrically conductive layer 111.
  • the metal oxide layer 115 is applied so that it can be decomposed by thermal decomposition, in particular by a
  • FIG. 6 shows a schematic representation of a
  • the metal particles 112 are formed from the metal oxide layer 115 and covered by the second transparent electrically conductive layer 113.
  • the layer 113 covers the metal particles 112 so that the layer 113 in the X direction has the thickness 117 of about 50 nm.
  • the arrangement of Figure 6 comprises the substrate 101 and the
  • the surface 114 of Figure 5 and the surface 116 of Figure 6 are smooth and as flat as possible over the entire areal extent of the layers 111 and 113 shown. According to further embodiments, the
  • the layer 111 is thicker in the X direction than the layer 113, so that the flat area in which the metal particles 120 are arranged are located closer to the surface 116 than at the surface 102 of the substrate 101.
  • FIG. 7 shows a schematic representation of a
  • an intermediate layer 150 is arranged on an upper surface 121 of the photoactive layer stack 120, which faces away from the substrate.
  • the second photoactive layer stack 160 is on a side facing away from the photoactive layer stack 120
  • Interlayer 150 is disposed in the X direction between the two photoactive layer stacks 120 and 160.
  • the intermediate layer 150 comprises a first partial layer 151, which adjoins the photoactive layer stack 120.
  • a second partial layer 152 of the intermediate layer 150 adjoins the second photoactive layer stack 160.
  • the intermediate layer 150 comprises in particular one of doped SiOx, SiCO, SiNx, SiCxOy, SiCxOyNz, ZnO, ITO and SnO 2.
  • Layer stack 160 the back reflector layer 130 is arranged.
  • Layer stack 160 a further intermediate layer arranged, which corresponds in function to the intermediate layer 150. On the further intermediate layer, a further photoactive layer stack is arranged, so that a so-called triple cell is formed.
  • the two photoactive layer stacks 120 and 160 each absorb in different ones
  • the intermediate layer 150 is semi-permeable in embodiments, which is particularly due to the arrangement of
  • the intermediate layer 150 reflects radiation of the
  • Wavelength range which is especially good in photoactive
  • the intermediate layer 150 is transparent to radiation of the wavelength range, which is particularly well absorbed in the photoactive layer stack 160.
  • the intermediate layer 150 comprises a plurality of
  • the metal particles 112 are arranged in a flat area along the surface 121 between the two photoactive layer stacks 120 and 160.
  • the metal particles 112 correspond in form and function to the embodiments of FIGS. 1 to 6.
  • the partial layer 151 is deposited on the surface 121. Then the
  • the metal particles 112 are covered by the sub-layers 151 and 152 so that they are not in direct contact with the photoactive layer stacks 120 and 160 are. Thus, an unwanted electrical connection of the two photoactive layer stacks 120 and 160 by the metal particles 112 is avoided. In addition, such a good transfer of energy from the intermediate layer to the photoactive layer stacks 120 and 160 is made possible.
  • the material and the size of the metal particles 112 in the intermediate layer 150 in particular, depending on the materials and the wavelength ranges of
  • FIG. 8 shows a schematic representation of a
  • the back reflector layer 130 has a first sub-layer 131, which is located on the
  • the back reflector layer 130 has a second sub-layer 132 that is separate from the first sub-layer 132
  • Photoactive layer stack 120 faces away. The first
  • Partial layer 131 and second sub-layer 132 include a plurality of metal particles 112.
  • the areally extended area in which the metal particles 112 are arranged extends substantially along the surface 121.
  • a thickness 133 of the part-layer 131 between the surface 121 and the metal particles 112 is less than or equal to 50 nm.
  • the metal particles 112 in the back reflector layer 130 return radiation that passes through the photoactive layer stack 120 to the back reflector layer 130 without being absorbed, in the direction of the photoactive
  • the plurality of metal particles 112 are disposed both in the front electrode 110 and in the back reflector 130. According to yet further embodiments in tandem junction cells, as shown in FIG. 7, for example, the metal particles 112 are both in FIG. 7,
  • the metal particles 112 are also arranged in the front electrode 110 and in the rear electrode 130 in the case of tandem junction cells.
  • the metal particles are according to embodiments in tandem junction solar cells without intermediate layer in the
  • Front electrode and / or the rear electrode arranged.
  • the metal particles 112 are arranged according to embodiments in the X direction in front of the substrate 101 closest to the photoactive layer stack 120. Alternatively or additionally, the metal particles 112 according to embodiments are each between two directly adjacent photoactive ones
  • the metal particles 112 according to embodiments are arranged after the photo 101 facing away from the substrate 101
  • the metal particles 112 are according to embodiments before and / or after each of
  • photoactive layer stack arranged.
  • the average size and / or the material of the metal particles 112 is specified depending on the layer in which the metal particles are arranged.
  • the average size and / or the material of the metal particles 112 for the electrode 110 is specified differently than the average size and / or the material of the metal particles 112 for the back reflector layer 130.
  • the average size and / or the material of the metal particles 112 for the electrode 110 and / or the back reflector layer 130 is specified differently than the average size and / or the material of the
  • Metal particles 112 for the intermediate layer 150 are Metal particles 112 for the intermediate layer 150.
  • the metal particles 112 are formed in tandem junction cells such that radiation from the
  • Wavelength range which is especially good in photoactive
  • Layer stack 120 is absorbed, is reflected back into the photoactive layer stack 120 and radiation of the
  • Wavelength range which is especially good in photoactive
  • Layer stack 160 is absorbed, not reflected. It is also possible to absorb the radiation of the wavelength range that is absorbed particularly well in the photoactive layer stack 120, and to subsequently transfer it non-radiatively back into the photoactive layer stack 120.
  • the metal particles 112 are formed so that radiation from the
  • Wavelength range which is especially good in photoactive
  • Layer stack 160 is absorbed in the intermediate layer 150 plasmons excited, their energy in the photoactive
  • Layer stack 160 is transmitted. By placing the metal particles 112 in the
  • Photovoltaic cell 110 the absorption probability of the incoming radiation and thus the efficiency of the solar cell is increased.
  • the thickness of the photoactive layer stack 120 or of the layer stack 160 in particular the thickness of the essentially intrinsic layer, can be reduced, as a result of which the
  • the Metal particles are also used in large-scale photovoltaic modules with a size of more than 5 m ⁇ , in particular more than 5.7 m ⁇ , since they also in these large-scale
  • Solar module or the cells of the solar module are distributed.
  • the sputter deposition process and subsequent heating and cooling can be easily incorporated into existing manufacturing processes in film solar cells

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

L'invention concerne un procédé de fabrication d'une électrode transparente (110) sur un substrat (101), comprenant: la préparation du substrat (101), le dépôt d'une première couche électroconductrice transparente (111) sur le substrat (101), le dépôt d'une couche d'oxyde métallique (115) sur une surface (114) orientée vers le substrat (101) de la couche électroconductrice (111), division de la couche d'oxyde métallique (115) en une pluralité de particules métalliques (112) par une décomposition thermique, dépôt d'une deuxième couche électroconductrice transparente (113) sur les particules métalliques (112). Pour fabriquer une cellule photovoltaïque, une pile de couches photoactives (120) est déposée sur la deuxième couche électroconductrice transparente (113). Une cellule photovoltaïque ainsi fabriquée présente une pluralité de particules métalliques (112) composées d'oxyde métallique.
EP11738227.5A 2010-07-30 2011-07-29 Procédé de fabrication d'une électrode transparente, procédé de fabrication d'une cellule photovoltaïque ainsi qu'agencement Withdrawn EP2599130A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP11738227.5A EP2599130A2 (fr) 2010-07-30 2011-07-29 Procédé de fabrication d'une électrode transparente, procédé de fabrication d'une cellule photovoltaïque ainsi qu'agencement

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP10171464 2010-07-30
EP11738227.5A EP2599130A2 (fr) 2010-07-30 2011-07-29 Procédé de fabrication d'une électrode transparente, procédé de fabrication d'une cellule photovoltaïque ainsi qu'agencement
PCT/EP2011/063137 WO2012013798A2 (fr) 2010-07-30 2011-07-29 Procédé de fabrication d'une électrode transparente, procédé de fabrication d'une cellule photovoltaïque ainsi qu'agencement

Publications (1)

Publication Number Publication Date
EP2599130A2 true EP2599130A2 (fr) 2013-06-05

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Country Status (7)

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US (1) US20130199610A1 (fr)
EP (1) EP2599130A2 (fr)
JP (1) JP2013535830A (fr)
KR (1) KR20130108541A (fr)
CN (1) CN103190001A (fr)
SG (1) SG187246A1 (fr)
WO (1) WO2012013798A2 (fr)

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Publication number Priority date Publication date Assignee Title
JP2013179297A (ja) * 2012-02-10 2013-09-09 Tokyo Institute Of Technology 光学制御層を有する太陽電池セル
JP7443038B2 (ja) 2019-12-04 2024-03-05 三星電子株式会社 化合物、組成物、液状組成物および有機エレクトロルミネッセンス素子

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US6927136B2 (en) * 2003-08-25 2005-08-09 Macronix International Co., Ltd. Non-volatile memory cell having metal nano-particles for trapping charges and fabrication thereof
JP4634129B2 (ja) * 2004-12-10 2011-02-16 三菱重工業株式会社 光散乱膜，及びそれを用いる光デバイス
CN1921151A (zh) * 2005-08-26 2007-02-28 中国科学院半导体研究所 一种近场光学增强型可见光探测器
JP2008277422A (ja) * 2007-04-26 2008-11-13 Kyocera Corp 積層型光電変換装置
TWI446555B (zh) * 2007-12-27 2014-07-21 Ind Tech Res Inst 太陽能電池之背電極模組
JP5069163B2 (ja) * 2008-03-28 2012-11-07 三菱電機株式会社 太陽電池およびその製造方法

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Title
See references of WO2012013798A2 *

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Publication number Publication date
JP2013535830A (ja) 2013-09-12
WO2012013798A3 (fr) 2012-06-28
KR20130108541A (ko) 2013-10-04
US20130199610A1 (en) 2013-08-08
CN103190001A (zh) 2013-07-03
WO2012013798A2 (fr) 2012-02-02
SG187246A1 (en) 2013-03-28

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