Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/80—Constructional details
  • H10H20/85—Packages
  • H10H20/851—Wavelength conversion means
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/80—Constructional details
  • H10H20/85—Packages
  • H10H20/852—Encapsulations
  • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/80—Constructional details
  • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/80—Constructional details
  • H10H20/85—Packages
  • H10H20/855—Optical field-shaping means, e.g. lenses
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/80—Constructional details
  • H10H20/882—Scattering means

Definitions

• An optoelectronic component is specified.
• An object to be solved is to specify an optoelectronic component which emits electromagnetic radiation in a predefinable wavelength range.
• the component comprises at least one
• the semiconductor device is one
• Radiation-emitting semiconductor chip may be any radiation-emitting semiconductor chip.
• the luminescence diode chip may be a luminescent or laser diode chip that has radiation in the range of
• the luminescence diode chip preferably emits light in the visible or ultraviolet region of the spectrum of the electromagnetic radiation.
• the radiation-emitting is
• a carrier such as a printed circuit board or a carrier frame (lead frame)
• the component is for example
• the latter comprises at least one converter element which serves to convert the electromagnetic radiation emitted by the semiconductor component.
• the converter element is along a Radiation exit path of the optoelectronic device downstream of the semiconductor device.
• the radiation exit path is the path of the electromagnetic radiation from the
• the at least one converter element converts light
• Wavelength to light of a different wavelength Wavelength to light of a different wavelength.
• the at least one converter element partially converts blue light primarily emitted from the semiconductor device into yellow light, which can mix together with the blue light to form white light.
• the at least one converter element thus has in operation of the
• Optoelectronic device has the function of a
• this comprises at least one filter medium which comprises filter particles or is formed with them.
• the filter medium is arranged downstream of the converter element along the radiation exit path.
• the filter medium absorbs at least one predeterminable one
• the filter medium can be any filter medium. Wavelength range.
• the filter medium can be any filter medium.
• Filter particles have a d5 Q value, measured in QQ, of at least 0.5 nm to at most 500 nm, preferably at least 10 nm at most 200 nm, on and / or are at least locally thread-like and have a thread-like
• Range has a diameter which is at least 0.5 nm and at most 500 nm.
• the d5 Q value is 1 nm to 2 nm.
• the term "d5o" is a median diameter of the filter particles and in which
• Main extension direction is at least twice as large as the diameter of the filter particles.
• Wavelength range which is to be scattered and / or absorbed by the filter medium stronger, set as accurately as possible.
• filter particles are particularly suitable for visible light or
• the optoelectronic component described here is based, inter alia, on the recognition that, for example, in flashing lights for a build-up of the optoelectronic component and / or in traffic lights, the optoelectronic component in a predetermined and selected wavelength range
• Electromagnetic radiation which of a
• Radiation-emitting semiconductor device of the component is emitted, but only partially from a converter element of the component in the desired
• Wavelength range converted At least part of the electromagnetic radiation emitted by the radiation-emitting semiconductor component is not converted by the converter element.
• the unconverted, unwanted radiation component may be at the exit of the
• the filter medium scatters and / or absorbs the predeterminable, for example the undesired
• Optoelectronic component electromagnetic radiation only in the range of a desired spectrum of
• this includes
• the material of the potting - the potting compound - is at least in places in direct
• both the converter particles and the filter particles are random, that is not deterministic, in the
• the filter medium is arranged downstream of the converter element in a radiation direction of the semiconductor component and is in at least indirect contact therewith.
• the filter means is a
• optical element such as a lens or a
• the optical element can then be applied, for example glued, directly onto an outer surface of the converter element facing away from the radiation-emitting semiconductor component.
• the filter particles with at least one of the materials or with at least one chemical compound of the materials Cd, Td, Si, Ag, Au, Fe, Pt, Ni, Se, S, S1O2, 1O2, Al2O3, Fe2C > 3, Fe3 ⁇ D4, ZnO formed.
• the filter particles may be formed with a dielectric material. It can Semiconductor materials are used whose band gap, for example, by the particle size, for example by the d5 Q value of the particles and / or their diameter, individually to the desired litter and / or
• unwanted wavelength range can be controlled very precisely by means of the filter particles, whereby as little as possible of the desired wavelength range is absorbed and / or scattered.
• the means of the filter particles whereby as little as possible of the desired wavelength range is absorbed and / or scattered.
• Filter particles formed such materials on a narrowly defined plasmon resonance.
• Filter particles particularly easy to produce from chemical syntheses are temperature stable, whereby during operation of the optoelectronic device neither a
• filter particles allow a simple application (also processing), for example, to the converter element, since the filter particles are present for application in solution.
• the filter particles allow a simple application (also processing), for example, to the converter element, since the filter particles are present for application in solution.
• Filter particles a core, which is formed with a first material, wherein the core is sheathed with a sheath at least in places, wherein the sheath with a second Material is formed and is in direct contact with the core.
• the filter particles are then formed by a composite structure.
• the core is formed with S1O2 as the first material and the cladding with Au and / or Ag as the second material. It has been found that filter particles formed with such materials, the absorption and / or scattering range can be particularly narrowly limited and precisely adjusted.
• the shell is formed with a plurality of individual layers, which follow one another starting from the core in the direction away from the core in a predeterminable sequence.
• the layer sequence starting from the core is away from the core through the core
• the core is then formed with S1O2.
• the transition from the core into the shell is gradual. This means that a transition zone can form between the core and the shell, in which both adjoining materials, that of the core and that of the shell, are located. The core and the shell can then not be sharply demarcated from each other in this transition zone and go evenly in the transition zone, for example
• Device electromagnetic radiation which is located on a spectral color line of a CIE standard color chart.
• Advantageous is such a component for special applications
• color coordinates C x and Cy of the electromagnetic radiation emitted by the semiconductor component differ from the color coordinates of the electromagnetic radiation emitted by the component by in each case
• Radiation-emitting semiconductor device emitted electromagnetic radiation through the converter element are the color coordinates of the re-emitted by the converter element together with the unconverted radiation within the color space on a surface which is bordered by the spectral color line of the CIE standard color chart and
• the filter means effects a shift of the color coordinates by at least 0.005 to a color location of a spectral color which lies on the spectral color line of the CIE standard color chart. For example, the shift is at most 0.01.
• the filter particles are formed with Au and have a d5 Q value, measured in QQ, of at least 1 nm to at most 200 nm, preferably
• Filtering means electromagnetic radiation in the wave range of at least 530 nm to at most 770 nm scatters and / or absorbed more than one of them different
• Wavelength range For example, this emits
• Converter element is partially converted to red light.
• the green light not converted by the converter element can be scattered and / or absorbed.
• Optoelectronic semiconductor components which emit green light are advantageous with a smaller one
• the filter particles are formed with Ag and have a d5 Q value, measured in QQ, of at least 1 nm to at most 200 nm, preferably
• Filtering means scatters and / or absorbs electromagnetic radiation in the wave range of at least 430 nm to at most 490 nm stronger than one of them
• Wavelength range For example, the one absorbed and / or scattered by the filter media
• Wavelength range around blue light The electromagnetic radiation emitted by the component can then be free of the blue light.
• the converter element at least two, for example three, different
• Conversion substances with which the converter particles are formed in each case. For example, convert the
• Radiation-emitting semiconductor device partially emitted ultraviolet radiation in blue and green light. Red, blue and green light can then blend into white light. However, only part of the converter element becomes ultraviolet radiation into white light
• the portion of the ultraviolet electromagnetic radiation which is not converted by the converter element can strike, for example, the human eye of a viewer of the component, where it causes damage in the eye of the observer due to its short-wave ripple.
• the filter medium now selectively absorbs and / or scatters the unwanted, ultraviolet radiation component, so that the optoelectronic component merely emits white light
• the flashing light comprises an optoelectronic component as described in one or more of the embodiments described here. That is, the optoelectronic described here
• the flashing light comprises a projection surface onto which the light from the
• Projection area at least partially
• Radiation-permeable screen For example, this screen is then in a reflection and / or
• Radiation decoupling device integrated. If the radiation-emitting semiconductor device emits blue light, for example at a wavelength of 440 nm, is emitted by the
• Example converted to orange or yellow light It is conceivable that about 1 to 10%, for example 1 to 5%, of the blue light emitted by the radiation-emitting semiconductor component is not converted by the converter element.
• the filter medium scatters and / or absorbs the unconverted, unwanted blue light, so that the optoelectronic component only dissipates that of the
• Converter element to orange or yellow light emitted light emitted. This converted light can then hit the projection surface and be at least partially decoupled from it by the flashing light.
• Filter characteristics of the filter medium can be adjusted individually according to the specification or application, the specific specification requirements for the flashing light.
• FIGS. 1A to 1D show schematic side views of exemplary embodiments of an optoelectronic component described here.
• FIGS. 2A to 2D show individual radiation measurement curves.
• FIGS 3A to 3C show in schematic
• Figures 4A and 4B show in schematic side views an embodiment of a flashing light described here.
• FIG. 1A shows a schematic side view of an optoelectronic component 100 described here having a radiation-emitting semiconductor component 1.
• the radiation-emitting semiconductor component 1 is a radiation-emitting
• the filter means 3 is not in direct contact with the converter element 2, but is arranged at a distance from the converter element 2 and the converter element 2 in
• Converter element 2 non-converted, wavelength range 41 composed. In the present case, it is in the
• a converter element 2 facing away from the outer surface of the filter means 3 is formed lenticular, whereby
• the filter medium 3 can with an epoxy, a silicone, a mixture of silicone and epoxy or a
• Filtering means 3 filter particles 31 are introduced according to one of the above embodiments.
• the filter means 3 can also be formed with another plastic material, for example PMMA. It is also conceivable that filter particles 31 to a
• the unwanted wavelength range 41 can be adjusted individually by means of such a mixture.
• FIG. 1B shows a further exemplary embodiment of an optoelectronic component 100 described here, in which, in contrast to FIG. 1A, the filter means 3 is in direct contact with the converter element 2.
• the filter means 3 is in direct contact with the converter element 2.
• Glued converter element 2 or applied by screen printing or doctoring.
• IC is shown in a schematic side view of how a radiation-permeable encapsulant 5, both the radiation-emitting semiconductor device 1 and the converter element 2, in this case a small plate or a film, positively covered at all exposed locations.
• the filter particles 31 are introduced.
• the filter particles 31 form the filter means 3.
• FIG. 1D in comparison to the optoelectronic component 100 shown in FIG.
• Filter particles 31 introduced into the casting 5. Both the converter particles 21 and the filter particles 31 are in the shaped body 5 at random, that is not deterministic, distributed.
• FIG. 2A shows an intensity distribution of the electromagnetic radiation emerging from the converter element 2 as a function of the wavelength, the physical unit of the intensity distribution being normalized to one. It is recognizable that the from the
• Converter element 2 exiting electromagnetic radiation has two maxima at 430 nm and at 600 nm.
• the rash PI is blue light and the rash P2 is orange light.
• mixed light emerges from the converter element 2, which is composed of the orange light and the blue light.
• Wavelength range of the blue light at 430 nm Wavelength range of the blue light at 430 nm.
• FIG. 2B shows, on a CIE standard color chart F, respective color coordinates Cy and C x of the color point Q2 of FIG.
• Component 100 for example, within the area Bl from the point Q2 to the point Q ] _, which lies on the spectral color line S, are shifted. In other words, a color locus intersects from the point Q ] _ in
• FIG. 2C shows an absorption scattering cross section of the filter means 3 as a function of the wavelength radiated onto the filter means 3.
• Measurement curves 6, 7, 8, 9 and 10 correspond to the respective d5 Q values of the spherical filter particles 31 of 90 nm, 70 nm, 50 nm, 30 nm and 10 nm.
• the filter particles 31 are formed with Ag and introduced into a material which has a refractive index of 1.5.
• the material is the molded body mass of the
• Shaped body 5 according to the embodiments of the figures IC and ID.
• the curve 6 At a wavelength of 430 nm, ie within the wavelength range of blue light, the curve 6 has the highest absorption scattering cross section.
• electromagnetic radiation of 430 nm can be absorbed particularly effectively by the filter means 3 if filter particles 31 with a d5 Q value of 90 nm are introduced into the filter means 3.
• FIG. 2D shows the corresponding curves 6, 7, 8, 9 and 10 for the scattering cross section as a function of the wavelength. Again it can be seen that at one Wavelength of 430 nm, the curve 6 the highest
• the scattering cross section of the curve 6 at a wavelength of 430 nm is approximately twice as large as the scattering cross section of the curve 7 at such a wavelength. It can also be seen that also the scattering cross section of the curve 8 is approximately half of the scattering cross section of the curve 7 or approximately one
• the curve 6 shows the highest absorption and scattering properties, whereby the electromagnetic radiation of wavelength 430 nm, so the blue light, particularly effective with particles having a d5 Q value of 90 nm
• the optoelectronic component it may be advantageous to absorb as much of the blue light as possible and to scatter as little as possible of the blue light. In question can then be a proportionate mixture
• the absorption and scattering properties can be determined by means of
• Filter particles 31 of the filter means 3 can be adjusted.
• Semiconductor device 1 emitted ultraviolet radiation. It can be seen from the curves of FIGS. 2C and 2D that the curve 6 also shows the highest absorption and scattering properties with respect to ultraviolet radiation. In that sense beneficial damage to the human eye
• FIG. 3A shows, in a schematic sectional illustration, filter particles 31 which are formed with a core 311 which is completely encased by a sheath 312, the sheath 312 being in direct contact with the core 311.
• the core 311 is in the present case formed with silicon dioxide, wherein the shell 312 is formed with Au.
• Such filter particles 31 form composite particles, through which the absorption ⁇ and / or scattering properties of the individual materials
• the filter particles 31 have a diameter D which is at least 0.5 nm and at most 500 nm, for example 1 nm.
• An extension of the filter particles 31 in a main direction of extension LH is presently at least twice the diameter D, for example one millimeter or more.
• the filter particles 31 are formed with Au.
• FIG. 3C shows a schematic sectional view of a further embodiment of the filter particles 31
• the filter particles 31 are each formed with a thread-like 31A and a ball-like portion 31B.
• the thread-like region 31A is that already described in FIG. 3B
• the spherical Region 31B has a c ⁇ Q value of 1 nm or more. It can be seen from FIG. 3C that the filter particles 31 are of dumbbell- or racial-shaped construction.
• the thread-like portion 31A may be formed with Au, and the ball-like portion 31B may be formed with Ag.
• the filter particles 31 are formed with a plurality of thread-like regions 31A and / or spherical regions 31B. With such areas formed
• Filter particles 31 can then form three-dimensional structures. It is conceivable that the filter particles 31 are constructed in the form of a network, in whose nodes the spherical areas 31B can be arranged. To the
• Example are the filter particles 31 pyramid or
• the ball-like portions 31B may be disposed, and the thread-like portions 31A are disposed between the spherical portions 31B and may connect the ball-like portions 31B with each other.
• the thread-like regions 31A can then form side edges of the three-dimensional structure.
• the individual filter particles 31 can be formed, at least in places, by a spiral structure with at least one main axis.
• the individual filter particles 31 can be formed, at least in places, by a spiral structure with at least one main axis.
• Filter particles 31 formed in the form of a helix.
• FIGS. 4A and 4B show a side view of a flashing light 200 described here.
• the optoelectronic component 100 for example according to one of the embodiments of FIGS. 1C or 1D, emits electromagnetic radiation of the desired one Wavelength range 4 in the direction of a projection surface 201.
• the desired wavelength range 4 is orange light.
• Semiconductor device 1 emits blue light at a
• the converter element 2 is a (Sr, Ba) 2Si5N8 or a Ca-alpha-SiA10N converter, which partially converts the blue light into orange light. About 10% of the blue light emitted from the radiation-emitting semiconductor device 1 is not converted by the converter element 2.
• the unconverted blue light is absorbed by the filter particles 31 formed with Ag having a d5 Q value, measured in QQ, of 30 nm, so that the radiation emitted by the optoelectronic component 100 is free of the blue light.
• the projection surface 201 is formed with a glass or a radiation-transmissive plastic.
• the electromagnetic radiation emitted by the radiation-emitting semiconductor component 1 is at least partially decoupled from the flashing light via the projection surface 201.
• Both the optoelectronic component 100 and the projection surface 201 are in a direction transverse to the radiation exit direction 45 of at least one
• Reflective body 202 bounded, wherein the reflection body 202 incident on him electromagnetic radiation
• the flashing light 200 is in the direction from the projection surface 201 toward the optoelectronic
• Component 100 ie opposite to the radiation exit direction 45, shown. Dashed is again shown the optoelectronic component 100, which is produced by the
• Projection surface 201 is covered.

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• 2010
  • 2010-06-30 DE DE102010025608A patent/DE102010025608A1/de not_active Withdrawn
• 2011
  • 2011-06-29 JP JP2013517277A patent/JP5818886B2/ja not_active Expired - Fee Related
  • 2011-06-29 US US13/807,594 patent/US20130168720A1/en not_active Abandoned
  • 2011-06-29 CN CN201180032886.2A patent/CN102971872B/zh not_active Expired - Fee Related
  • 2011-06-29 KR KR1020137002102A patent/KR20130115213A/ko not_active Ceased
  • 2011-06-29 WO PCT/EP2011/060931 patent/WO2012001059A1/de not_active Ceased
  • 2011-06-29 EP EP11741537.2A patent/EP2589091A1/de not_active Withdrawn

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