EP2569608A1 - Détecteur de lumière infrarouge à compatibilité de brochage, et à stabilité thermique améliorée - Google Patents
Détecteur de lumière infrarouge à compatibilité de brochage, et à stabilité thermique amélioréeInfo
- Publication number
- EP2569608A1 EP2569608A1 EP11719005A EP11719005A EP2569608A1 EP 2569608 A1 EP2569608 A1 EP 2569608A1 EP 11719005 A EP11719005 A EP 11719005A EP 11719005 A EP11719005 A EP 11719005A EP 2569608 A1 EP2569608 A1 EP 2569608A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- infrared light
- light detector
- inverting input
- supply voltage
- transimpedance amplifier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000000463 material Substances 0.000 claims abstract description 5
- 239000003990 capacitor Substances 0.000 claims description 9
- 238000010079 rubber tapping Methods 0.000 abstract description 2
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/34—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using capacitors, e.g. pyroelectric capacitors
Definitions
- the invention relates to a pin-compatible
- An infrared light detector for detecting heat radiation has, for example, a pyroelectric sensor chip
- Thin-film construction with two electrode layers and a pyroelectric layer of pyroelectric sensitive material arranged between the electrode layers.
- Material is ferroelectric lead zirconate titanate (PZT).
- PZT ferroelectric lead zirconate titanate
- the electrical signal results from a
- pyroelectric infrared sensors are read out by means of a "source follow" circuit, whereby the voltage induced between two electrodes is amplified by means of a high resistance of, for example, 10-100Gig ohms and a junction field effect transistor Combination with the relatively high capacity of the pyroelectric
- Time gradients such as an unwanted thermal shock and / or unwanted vibration are exposed, they have a high electrical time constant.
- This high electrical time constant in the "source follow" mode leads to a long "downtime” of a few seconds, during which the gas analyzer undesirably can not measure.
- thermal stability undesirable effects, for example due to the undesirable thermal shock and / or undesirable vibration, are referred to as thermal stability.
- the sensor chip has a high capacity with its pyroelectric layer, wherein for amplifying the to the
- Transimpedance amplifier is conventionally based on a
- the operational amplifier has an inverting and a non-inverting input, wherein the output of the operational amplifier via a
- Resistor is negative feedback to the inverting input.
- the sensor chip is connected with its one electrode layer to the inverting input and lies with its other electrode layer to ground. The non-inverting input is also grounded.
- the output signal of the transimpedance amplifier is usually not compatible with a downstream one
- Transimpedance amplifier an electric current as
- Output signal provides, whereas the "source follow" circuit, an electrical voltage as an output signal
- infrared sensors based on "source follow" readout electronics do not easily interfere with infrared sensors operating on a
- Transimpedanzwandlerscnies based can be replaced.
- the exchange of the infrared sensors would be a Modification of the downstream readout circuit, resulting in a costly modification of the entire
- PCB would go along. It would be desirable a pin compatible infrared light detector, the on a
- Transimpedance amplifier is based, wherein when exchanged with an infrared sensor based on a "source follow" circuit, a modification of a readout electronics, would not be required.
- the object of the invention is to provide an infrared light detector with a transimpedance amplifier, which is pin-compatible with an infrared sensor based on a "source follow" circuit, so that a modification of a readout electronics, which is connected downstream of the infrared sensor based on the "source follow" is not required, the
- Infrared sensor has a high thermal stability.
- the infrared light detector according to the invention has at least one sensor chip which has a layer element made of a pyroelectric sensitive material and a base electrode and a top electrode, to which the layer element is connected for tapping the electrical signals generated in the layer element by their irradiation with light, and a transimpedance amplifier for Amplify the signals with an operational amplifier, which with a
- Supply voltage is operated asymmetrically and at the inverting input of the base electrode is connected to the supply voltage source is provided to ground voltage divider with a sub-node to which a partial voltage is applied, which is smaller than the supply voltage, and with the non-inverting input and the Head electrode is electrically coupled.
- Head electrode and the non-inverting input is at the head electrode and at the non-inverting input
- Circuit for signal processing is applied, which is operated in the voltage mode, without causing the circuit to the
- Signal processing circuits pin-compatible together. This allows the infrared light detector with his
- Transimpedance amplifier and its pyroelectric sensor chip are operated together with conventional signal processing circuits in the voltage mode. Furthermore, the infrared detector according to the invention surprisingly has high thermal stability.
- the voltage divider comprises a plurality of series-connected and grounded partial resistors. In terms of population, the voltage divider has two of the
- Partial resistors between which the sub-node is located.
- the value of the partial voltage is defined as a function of the supply voltage and as a function of the ratio of the resistance values of the partial resistors.
- Each of the partial resistors preferably has the same resistance, whereby the value of the partial voltage is half that of the supply voltage.
- the transimpedance amplifier has a negative feedback resistance connected between the inverting input and an output of the
- the negative feedback resistor has a value of 100 ⁇ to 100 GQ.
- At the output of the operational amplifier is a
- the transimpedance amplifier has a negative feedback capacitor connected in parallel with the negative feedback resistor between the inverting input and the output of the operational amplifier, the negative feedback capacitor having a capacitance of 0.01 pF to 10 pF, more preferably 0.1 pF to 1 pF.
- Infrared light detector preferably has at least two of
- Transimpedance amplifier is connected, the
- Transimpedance amplifier connected in parallel to the
- Supply voltage source and are connected to the sub-node.
- Infrared light detector 1 a first sensor chip 3 and a second sensor chip 4, wherein the sensor chips 3, 4 each have a pyroelectric layer element 5, 8. On the infrared light detector 1 incident light 2 strikes the sensor chips 3, 4, wherein in the pyroelectric
- the sensor chips 3, 4 each have a base electrode 6, 9 and a top electrode 7, 10, wherein between the
- each of the pyroelectric layer element 5, 8 is arranged and tapped.
- the charges shifted in the sensor chips 3, 4 by the incident light 2 result in a signal to be amplified.
- the gain of the signal becomes for the first sensor chip 3 accomplished with a first transimpedance amplifier 11 and for the second sensor chip 4 with a second transimpedance amplifier 12.
- To supply the infrared light detector 1 is a
- Supply voltage source 13 is provided, which provides based on a mass 14, a positive supply voltage.
- a voltage divider 15 is connected, of a first partial resistance 16 and a second
- Partial resistance 17 is formed, wherein the partial resistors 16, 17 are connected in series and the mass 14. This results in a partial node 18 between the first partial resistance 16 and the second partial resistance 17, to which, relative to the mass 14, a partial voltage is applied.
- Partial resistance 16 and the second partial resistance 17 each have the same resistance, so that the partial voltage is half as high as the supply voltage.
- the transimpedance amplifiers 11, 12 each have one
- Input 20, 26 and an inverting input 21, 27 and an output 22, 28 has. Between the inverting input
- Countercoupling capacitor 24, 30 is provided, wherein of the
- Transimpedance amplifier 11, 12 is formed.
- the base electrode 6, 9 of each sensor chip 3, 4 is connected to the respective inverting input 21, 27,
- the operational amplifiers 19, 25 are operated asymmetrically by the supply voltage source 13, wherein one of the supply terminals of the operational amplifiers 19, 25 with the supply voltage source 13 and the other of the Supply terminals of the operational amplifiers 19, 25 are connected to the ground 14.
- the negative feedback capacitors 24, 30 have a capacity of 0.01 pF to 10 pF, more preferably from 0.1 pF to 1 pF.
- the electrical time constant is as i e i
- Infrared light detector 1 by its invention
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102010020348A DE102010020348B3 (de) | 2010-05-12 | 2010-05-12 | Pin-kompatibler Infrarotlichtdetektor mit verbesserter thermischer Stabilität |
PCT/EP2011/057611 WO2011141509A1 (fr) | 2010-05-12 | 2011-05-11 | Détecteur de lumière infrarouge à compatibilité de brochage, et à stabilité thermique améliorée |
Publications (1)
Publication Number | Publication Date |
---|---|
EP2569608A1 true EP2569608A1 (fr) | 2013-03-20 |
Family
ID=44242499
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP11719005A Ceased EP2569608A1 (fr) | 2010-05-12 | 2011-05-11 | Détecteur de lumière infrarouge à compatibilité de brochage, et à stabilité thermique améliorée |
Country Status (6)
Country | Link |
---|---|
US (1) | US8878131B2 (fr) |
EP (1) | EP2569608A1 (fr) |
KR (1) | KR101805122B1 (fr) |
CN (1) | CN103109167B (fr) |
DE (1) | DE102010020348B3 (fr) |
WO (1) | WO2011141509A1 (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102012012864A1 (de) * | 2012-06-28 | 2014-01-02 | Brose Fahrzeugteile Gmbh & Co. Kommanditgesellschaft, Hallstadt | Kapazitiver Sensor für eine Kollisionsschutzvorrichtung |
KR20160060505A (ko) * | 2014-11-20 | 2016-05-30 | 삼성전자주식회사 | 광계수 검출 장치 및 방법, 방사선 촬영 장치 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10221708A1 (de) * | 2002-05-16 | 2003-12-04 | Infratec Gmbh Infrarotsensorik | Verfahren und NDIR-Gasanalysator zur Bestimmung der Konzentration von Gasen und Dämpfen |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4468658A (en) * | 1979-09-10 | 1984-08-28 | Rossin John A | Simplified intruder detection module |
JPH0758228B2 (ja) * | 1988-07-29 | 1995-06-21 | 株式会社村田製作所 | 温度検知器 |
KR100301747B1 (ko) * | 1997-03-26 | 2001-09-03 | 이마이 기요스케 | 초전형적외선검출장치 |
JP3367876B2 (ja) * | 1997-09-12 | 2003-01-20 | 松下電工株式会社 | 赤外線検出装置 |
US6340816B1 (en) * | 1998-02-27 | 2002-01-22 | Honeywell International, Inc. | Pyroelectric detector with feedback amplifier for enhanced low frequency response |
JP3664041B2 (ja) * | 2000-05-17 | 2005-06-22 | 株式会社村田製作所 | 電荷型センサ用増幅回路 |
US7498576B2 (en) * | 2005-12-12 | 2009-03-03 | Suren Systems, Ltd. | Temperature detecting system and method |
JP5042637B2 (ja) * | 2007-01-12 | 2012-10-03 | アズビル株式会社 | 火炎検出装置 |
-
2010
- 2010-05-12 DE DE102010020348A patent/DE102010020348B3/de active Active
-
2011
- 2011-05-11 EP EP11719005A patent/EP2569608A1/fr not_active Ceased
- 2011-05-11 CN CN201180033616.3A patent/CN103109167B/zh active Active
- 2011-05-11 KR KR1020127032444A patent/KR101805122B1/ko active IP Right Grant
- 2011-05-11 WO PCT/EP2011/057611 patent/WO2011141509A1/fr active Application Filing
- 2011-05-11 US US13/697,474 patent/US8878131B2/en active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10221708A1 (de) * | 2002-05-16 | 2003-12-04 | Infratec Gmbh Infrarotsensorik | Verfahren und NDIR-Gasanalysator zur Bestimmung der Konzentration von Gasen und Dämpfen |
Non-Patent Citations (3)
Title |
---|
ANONYMOUS: "Operationsverstärker - Wikipedia", 8 May 2010 (2010-05-08), XP055257912, Retrieved from the Internet <URL:https://de.wikipedia.org/w/index.php?title=Operationsverst%C3%A4rker&oldid=74096882> [retrieved on 20160314] * |
ANONYMOUS: "Spannungsteiler - Wikipedia", 10 October 2010 (2010-10-10), XP055257841, Retrieved from the Internet <URL:https://de.wikipedia.org/w/index.php?title=Spannungsteiler&oldid=74168614> [retrieved on 20160314] * |
See also references of WO2011141509A1 * |
Also Published As
Publication number | Publication date |
---|---|
DE102010020348B3 (de) | 2011-07-21 |
KR20130108087A (ko) | 2013-10-02 |
WO2011141509A1 (fr) | 2011-11-17 |
KR101805122B1 (ko) | 2017-12-05 |
US8878131B2 (en) | 2014-11-04 |
US20130126734A1 (en) | 2013-05-23 |
CN103109167A (zh) | 2013-05-15 |
CN103109167B (zh) | 2015-09-16 |
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