EP2554019B1 - Dispositif optoélectronique - Google Patents

Dispositif optoélectronique Download PDF

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Publication number
EP2554019B1
EP2554019B1 EP11720049.3A EP11720049A EP2554019B1 EP 2554019 B1 EP2554019 B1 EP 2554019B1 EP 11720049 A EP11720049 A EP 11720049A EP 2554019 B1 EP2554019 B1 EP 2554019B1
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EP
European Patent Office
Prior art keywords
light source
semiconductor light
temperature
branch
color
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Not-in-force
Application number
EP11720049.3A
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German (de)
English (en)
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EP2554019A1 (fr
Inventor
Ralph Wirth
Horst Varga
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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Publication of EP2554019A1 publication Critical patent/EP2554019A1/fr
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B47/00Circuit arrangements for operating light sources in general, i.e. where the type of light source is not relevant
    • H05B47/20Responsive to malfunctions or to light source life; for protection
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B47/00Circuit arrangements for operating light sources in general, i.e. where the type of light source is not relevant
    • H05B47/10Controlling the light source
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/20Controlling the colour of the light
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/20Controlling the colour of the light
    • H05B45/28Controlling the colour of the light using temperature feedback

Definitions

  • An optoelectronic device for emitting mixed light is specified.
  • LEDs light-emitting diodes
  • white light when using light-emitting diodes (LEDs) LEDs of different colors and / or several phosphors can usually be used.
  • LEDs light-emitting diodes
  • LEDs LEDs of different colors and / or several phosphors
  • a stabilizing member is disclosed in the non-prepublished patent DE application 10 2008 057 347.7 shown.
  • color temperature controllable light sources have an optical and / or thermal sensor, a microcontroller and a plurality of LED drivers for the control of the LEDs. For the compensation of thermal effects typical LED characteristics are stored in the microcontroller.
  • the publication US 2002/0047624 A1 describes a light source with groups of differently colored LEDs in parallel branches, which are controlled by a processor by means of pulse width modulation.
  • the brightness of the individual LED branches, each of which still has a fixed resistance, can be measured by means of a detector in order to determine the pulse width and thus the brightness of the individual branches, so that a desired mixed color is perceived during operation.
  • the publication US 2009/0091265 A1 describes a backlight device having a plurality of segments each having a plurality of red, green and blue LED chips and a variable resistance element.
  • the variable resistance element can be, for example, a PTC or NTC element and serves to generate a feedback signal which is compared in a control unit with stored values in order to specifically control the LED chips with temperature increases in such a way that a desired mixed light is emitted ,
  • the publication WO 99/39319 A2 describes a signal device with a plurality of series-connected LEDs, wherein groups of LEDs are each connected in parallel with a Zener diode.
  • the resistance element causes a temperature stabilization, since it counteracts the different temperature dependence of the first and second semiconductor light source, from which the temperature-dependent color locus shift originates.
  • the semiconductor light source control element By the semiconductor light source control element, the intensity of the third semiconductor light source is controllable, causing a color temperature change of the mixed light.
  • the set color temperature of the mixed light changes slightly with temperature change than would be the case without temperature compensation by the resistance element. An increase in temperature occurs during normal operation, for example, when the device heats up to its operating temperature after switching on.
  • the optoelectronic device enables the compensation of the physical properties of the semiconductor light sources by a suitably selected temperature-dependent resistance element.
  • This circuit arrangement has a simpler construction compared to the conventional circuit arrangements, since only one light-emitting diode driver or Semiconductor light source control element is provided instead of several. On a microcontroller can be omitted.
  • light may refer to electromagnetic radiation having one or more wavelengths or wavelength ranges from an ultraviolet to infrared spectral range.
  • light may be visible light and may include wavelengths or wavelength ranges from a visible spectral range between about 350 nm and about 800 nm.
  • the visible light can be characterized by its color locus with x and y color coordinates according to the so-called CIE 1931 color chart or CIE standard color chart known to a person skilled in the art.
  • a white light or light with a white luminous or color impression light may be designated with a color locus which corresponds to the color locus of a blackbody Planckner or by less than 0.1 and preferably less than 0.05 in x- and / or y- Color coordinates deviates from the color location of a black plank body radiator.
  • a luminous impression referred to here and hereinafter as a white luminous impression, can be caused by light having a color rendering index (CRI) of greater than or equal to 60, preferably greater than or equal to 70, and particularly preferably greater than or equal to equal to 80.
  • CRI color rendering index
  • a luminous impression may be referred to, which has a color temperature of less than or equal to 5500 K.
  • cold white may be referred to a white light impression, which has a color temperature of greater than 5500 K.
  • the range around 5500 K can be described as neutral white.
  • color temperature can the Color temperature of a planck blackbody radiator or also known to those skilled so-called correlated color temperature (CCT) in the case of a white luminous impression in the sense described above, which can be characterized by Farbortkoordinaten that differ from the chromaticity coordinates of the planck blackbody radiator.
  • CCT correlated color temperature
  • Different light impressions by light of differently perceivable color locations can be caused in particular by mutually different first and second wavelength ranges.
  • a first and a second wavelength range may be referred to as different if, for example, the first wavelength range has at least one spectral component which is not contained in the second wavelength range.
  • the first and second wavelength ranges cause respective luminance and color impressions with different x and / or y coordinates in the CIE standard color chart.
  • the resistance element may be in thermal contact with the first and / or the second and / or the third semiconductor light source and thus with the first and / or second and / or third light-emitting diode (LED). This may mean that the temperature of the resistive element changes to the same extent as the temperature changes of the semiconductor light sources, and vice versa.
  • the different first and second temperature dependencies of the first and second intensities and / or the first and second wavelength ranges may vary depending on the ambient and Operating temperature to change the light impressions of the semiconductor light sources different from each other.
  • the luminous impression of the superimposition that is to say of the mixed light, can likewise change.
  • the present optoelectronic device it may be possible by means of the resistance element to produce a mixed light which has the lowest possible temperature dependence with regard to its color locus.
  • the first temperature dependence may be less than the second temperature dependence.
  • the resistive element is a resistive element having a positive temperature coefficient, which means that the electrical resistance of the resistive element increases with increasing temperature and the resistive element is designed as a PTC or PTC (resistance temperature coefficient) - resistance element. If the temperatures of the first and second semiconductor light sources increase, for example, as a result of an increase in the ambient temperature, then, in the aforementioned case, the second intensity decreases more than the first intensity. This means that the color location of the mixed light would be shifted toward the color location of the first semiconductor light source.
  • the temperature and thus also the electrical resistance increase at the same time, so that the current flowing through the first series circuit and thus through the first semiconductor light source in comparison to the current flowing through the second semiconductor light source is reduced, so that the purely temperature-induced change of the first and second intensity can be counteracted.
  • the first temperature dependence may be greater than the second temperature dependence.
  • the resistive element is a resistive element having a negative temperature coefficient, which means that the electrical resistance of the resistive element decreases with increasing temperature and the resistive element is designed as a NTC ("negative temperature coefficient") - resistive element.
  • NTC negative temperature coefficient
  • the resistance element may have a temperature-dependent electrical resistance, which is adapted to the first and second temperature dependence of the first and second semiconductor light source. This may in particular mean that the resistance element has no switching behavior and that the electrical resistance does not change abruptly in a temperature range of -40 ° C to 125 ° C.
  • the electrical resistance of the resistive element in a temperature range of greater than or equal to -40 ° C and less than or equal to 125 ° C continuously, that means that the electrical resistance depending on the design of the resistive element as PTC thermistor or thermistor with a substantially constant Temperature dependence increases or decreases.
  • the resistance element has a linear or approximately linear resistance-temperature dependence.
  • the semiconductor light source control element in a first state, substantially blocks the flow of current through the third branch and substantially releases the current flow through the third branch in a second state.
  • the power supply to the third semiconductor light source in the first state, is interrupted or at least reduced so that it does not emit light; in the second state, it emits light.
  • the color temperature of the mixed light is changed.
  • the semiconductor light source control element serves as a switch with which the third semiconductor light source is switched on and off in order to switch it back and forth between two color temperatures of the mixed light.
  • the current flow through the third branch between the first and the second state is continuously variable. This allows the color temperature to change continuously.
  • the semiconductor light source control element comprises a transistor to which a control voltage can be applied.
  • the transistor controls the current flow as a function of the applied control voltage through the third branch and thus the intensity of the light emitted by the third semiconductor light source.
  • the transistor may be formed as an N-channel MOSFET or P-channel MOSFET, giving degrees of freedom in circuit design.
  • a potentiometer for adjusting the control voltage may be provided.
  • a voltage divider for adjusting the control voltage is provided.
  • the control voltage can drop, which is applied to the transistor.
  • a voltage divider with a potentiometer can be changed by a change in the resistance of the potentiometer, the voltage dropping to resistors of the voltage divider and thus change the control voltage.
  • the mixed light is warm white in one of the states and cold white in the other state.
  • the light emitted by the device can be switched between cold and warm white to adjust the lighting.
  • a third semiconductor light source capable of emitting blue light.
  • the mixed light is warm white.
  • the third semiconductor light source emits light, the mixed light becomes colder in color temperature.
  • the device is designed as a module, so that the elements of the device are arranged in a housing.
  • two terminals for applying a supply voltage are provided.
  • at least one connection for applying a potential for driving the semiconductor light source control element is provided in addition to the terminals for applying the supply voltage.
  • FIG. 1 shows a circuit diagram or a circuit arrangement of an embodiment of an optoelectronic device for emitting mixed light, that is, a light source, with a first Semiconductor light source 1, a second semiconductor light source 2 and a third semiconductor light source 3rd
  • the first semiconductor light source 1 comprises a first LED 11, which emits light in a first, cold-white wavelength range. Also light emission in the yellowish-green range is conceivable.
  • the second semiconductor light source 2 comprises a series connection of two second LEDs 21, 22, which emit red light in a second wavelength range.
  • the third semiconductor light source 3 comprises a third LED which emits blue light in a third wavelength range.
  • further LEDs 7, 8 are provided which emit light in the first wavelength range.
  • the provision of the further LEDs 7, 8 is optional. It can also be provided none, one or more than two. Your lighting impression is not limited to white.
  • first, second and third resistance elements 4, 5, 6 are provided.
  • the first resistance element 4 is temperature-dependent and has a positive temperature coefficient, so that its resistance increases with increasing temperature.
  • the first resistance element 4 is a PTC resistance element.
  • a second resistance element 5 has a variable resistor. This resistance element is designed as a potentiometer.
  • the resistance of the third resistance element 6 is fixed.
  • the circuit arrangement further comprises a MOSFET, which serves as a semiconductor light source control element 9, with a gate, a source and a drain terminal 91, 92, 93.
  • the first, second and third semiconductor light source 1, 2, 3, the resistance elements 4, 5, 6 and designed as a MOSFET semiconductor light source control element 9 are connected as follows: In a first branch 101, the first semiconductor light source 1 is connected in series with the first resistive element 4 , In a second branch 102, the second semiconductor light source 2 is arranged with the two LEDS 21, 22, and in a third branch 103, the MOSFET configured as a semiconductor light source control element 9 is connected in series with the third semiconductor light source 3, wherein the drain terminal 93 with the third LED 31 is connected.
  • the first, second and third branches 101, 102, 103 are connected in parallel.
  • the two further LEDs 7, 8 are connected in series with the parallel connection.
  • a series circuit with the second and third resistance element 5, 6 is connected.
  • the second and third resistance elements 5, 6 serve as voltage dividers.
  • a control voltage is tapped, which is applied to the gate terminal 91 of the designed as a MOSFET semiconductor light source control element 9.
  • the red-emitting second semiconductor light source 2 and the blue-emitting third semiconductor light source 3 any other combination of semiconductor light sources with emission spectra in other wavelength ranges can be used if another color and Light impression of the mixed light is desired.
  • the color of the third semiconductor light source 3 is not limited to blue.
  • the mixed light of the first and second semiconductor light sources 1, 2 is warm white, without contribution of the third semiconductor light source 3. With increasing intensity of the third LED 3, which emits blue light, the color temperature of the mixed light is increasingly colder.
  • red LEDs, blue LEDs, and white (eg, phosphor converted blue) LEDs efficiently allows the construction of a light source in which the color temperature is controllable along the white curve, which is of great interest for SSL (solid-state lighting) Solid State Lighting) applications.
  • SSL solid-state lighting
  • Solid State Lighting Solid State Lighting
  • the color locus stabilization of white and red LEDs 11, 21 is advantageous, since the emitted light of the red LEDs 21 is displaced more in the long wavelength range with temperature increase and at the same time they lose more efficiency or intensity than the light of the white LEDs 11, 7, 8 and the blue LED 31.
  • the white LEDs change color location due to decreasing phosphorus efficiency with increasing temperature.
  • the temperature-dependent first resistive element 4 a control is achieved, which reduces the Farbortverschiebung.
  • the frame 100 indicates the white point stabilizing element of the circuit arrangement of the optoelectronic device, which comprises the first and second semiconductor light sources 1, 2 and the PTC resistance element 4 includes. The operation of this stabilizing member will be explained below.
  • the current flowing through the first semiconductor light source 1 is reduced by the PTC resistance element 4 as the ambient temperature increases, so that the current balance between the first and second semiconductor light sources 1 compared to a constant operating current for the first semiconductor light source 1 , 2 can be achieved by a comparatively lower current increase in the second semiconductor light source 2.
  • This has the consequence that current-induced self-heating effects in the second semiconductor light source 2 can be kept comparatively lower, resulting in a smaller wavelength shift of the light emitted by the second LEDs 21, 22, than would be possible with sole control of the operating current of the second semiconductor light source 2.
  • the PTC resistance element 4 can also be designed as an NTC element if the first and second semiconductor light sources 1, 2 are designed such that the first temperature dependence of the first intensity is greater than the second temperature dependence of the second intensity is.
  • the controllable semiconductor light source 3 in the third path extends this principle and makes it possible to stabilize a light source controllable between cold and warm white.
  • the third branch 103 with the third LED 31 can be substantially blocked by the semiconductor light source control element 9 designed as a MOSFET in a first state, so that the third LED 31 does not emit light. In this case, the mixed light of the light source is warm white.
  • the third branch 103 is enabled by the semiconductor light source control element 9 designed as a MOSFET, so that the third LED 31 emits light.
  • the blocking / release of the third branch 103 takes place as a function of the voltage applied to the semiconductor light source control element 9 designed as a MOSFET Control voltage Us. The release can also take place partially and takes place at the expense of the other branches 101, 102, since the current now flows over three branches 101, 102, 103. When released, the mixed light becomes colder.
  • the control voltage Us for the designed as a MOSFET semiconductor light source control element 9 is set.
  • the trained as a potentiometer second resistor element 5 allows to change the control voltage, since by a change in resistance of the potentiometer 5, the voltage ratio between the voltage across the resistor elements 5, 6 voltages and thus the control voltage Us is changed.
  • This circuit arrangement makes it possible to stabilize the cold white and warm white controllable light source by means of the PTC resistor element 4.
  • an NTC resistance element (not shown) may be provided for this purpose.
  • the color temperature can be set solely via the control voltage Us.
  • This circuit relates the control voltage Us directly from the operating current of the LED light source.
  • a simple potentiometer as in FIG. 1 is shown.
  • the gate terminal 91 may remain unconnected as a further pin of the LED component and the control voltage may be externally set, e.g. controlled by a digital potentiometer via DMX or Dali interfaces.
  • FIG. 1 shown elements except for the voltage source U and the voltage divider 5, 6, as indicated by the frame 200, formed as a module and be arranged in a housing which in addition to terminals for the supply voltage U has a further connection for applying the control potential.
  • the control voltage Us is also conceivable that two further connections are provided for applying the control voltage Us.
  • FIG. 2 shows a section of the CIE standard color chart in the range of the chromaticity coordinate x between 0.28 and 0.48 and in the range of the chromaticity coordinates y between 0.24 and 0.44.
  • the line 900 marks the so-called white curve of a planck blackbody radiator at different temperatures. These temperatures are also referred to as color temperature.
  • the regions 910, 920, 930, 940, 950, 960, 970, 980 are color temperature ranges of a so-called ANSI binning system, which classifies color temperatures of white into classes.
  • the area 910 is 6500K, which is cold white light is.
  • the range 920 corresponds to 5700K, which is also to be regarded as cold white light.
  • the area 930 corresponds to 5000K, which is to be regarded as a neutral white light.
  • the area 940 corresponds to 4500K.
  • the area 950 corresponds to 4000K.
  • the area 960 corresponds to 3500K.
  • the area 970 corresponds to 3000K.
  • the area 980 corresponds to 2700K.
  • the line 990 determined simulatively assuming typical LED characteristics for the light source is passed through with variation of the control voltage Us at an operating temperature of 75 degrees Celsius. It can be seen that the traversed curve in Cx-Cy space is completely within the regions 910, 920, 930, 940, 950, 960, 970, 980 of the ANSI binning system.
  • the color temperature varies between 7000K and 2700K.
  • the color rendering index CRI always remains above CRI> 80, in the warmer range even above CRI> 90.
  • FIG. 3 illustrates the stabilizing effect of the circuit arrangement with the PTC resistor element 4.
  • FIG. 3 shows a section of the CIE standard color chart in the range of the chromaticity coordinate x between 0.28 and 0.48 and in the range of the chromaticity coordinates y between 0.24 and 0.44.
  • the 900 line marks the white curve.
  • areas 910, 920, 930, 940, 950, 960, 970, 980 of the ANSI binning system are also shown.
  • the unfilled marks 911, 921, 931, 941, 951 are the color loci of a comparison circuit arrangement without color stabilization, that is to say without a PTC resistance element, at a temperature of 25 degrees Celsius, which corresponds to the state directly after switching on the light source.
  • the different markings 911, 921, 931, 941, 951 correspond here to different color loci, when changing the color temperature of the mixed light emitted by the circuit arrangement.
  • the hatched marks 912, 922, 932, 942, 952 show the color loci of the mixed light in a color locus stabilization circuit using a PTC resistance element 4 at a temperature of 25 degrees Celsius, which corresponds to the state immediately after the light source is turned on.
  • the various markings 912, 922, 932, 942, 952 in this case correspond to different color locations when changing the color temperature of the mixed light emitted by the circuit arrangement by changing the control voltage Us.
  • the filled marks 913, 923, 933, 943, 953 show the color loci stabilized with the PTC resistance element 4 at a temperature of 75 degrees Celsius, both for the circuit arrangement without and with color locus stabilization.
  • the group of markers 911, 912, 913 shows the color loci for two circuit arrangements with or without PTC resistance element 4, which are adjusted so that they emit light at the same color locus 913 at 75 degrees Celsius.
  • the deviation of the color locus 911 at 25 degrees Celsius from the color locus 913 is significantly greater than in the case of the circuit arrangement with PTC resistance element 4 the deviation of the color locus 912 at 25 degrees Celsius.
  • the color locus drifts to a lesser extent when the temperature changes.
  • the group of mark 921, 922, 923 shows this effect as well as the groups of labels 931, 932, 933 and 941, 942, 943, respectively.
  • the group of mark 951, 952, 953 shows this effect in warm white light.
  • the deviation between the color loci 912, 922, 932, 942, 952 of the stabilized circuitry after power up, i. at 25 degrees Celsius, and the color loci 913, 923, 933, 943, 953 after reaching the operating temperature, i. at 75 degrees Celsius, is low. Especially in the warm and neutral white range, the deviations of the color temperature with respect to the chromaticity coordinates remain in the range of less than 0.01. This small deviation is due to the PTC resistor element 4.
  • FIGS. 4 and 5 clarify again in the third branch, the control of the third LED 31 via the control voltage Us by means of a P-channel MOSFET or an N-channel MOSFET.
  • the P-channel MOSFET as the semiconductor light source control element 9 is very suitable for use in a module provided with only one other terminal or pin for applying the control potential.
  • the supply voltage can be applied to the pins 41, 42, to the latter is the reference potential. Since the supply potential is already applied to the source terminal 92 of the P-channel MOSFET 9 via the pin 41, only one further pin 43, which is connected to the gate terminal 91, is required to set the gate-source voltage.
  • the module should have a similar supply voltage as the gate-source voltage to avoid external control voltages. If an external control voltage is desired, this is also feasible by the gate terminal 91 of the MOSFET is carried out unconnected.
  • FIG. 5 shows as an exemplary embodiment of a semiconductor light source control element 9 an N-channel MOSFET whose drain terminal 93 is connected to the third diode 31.
  • the supply voltage U Between the source terminal 92 and the third diode 31 is the supply voltage U.

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Claims (12)

  1. Dispositif optoélectronique destiné à dégager un éclairage mixte, comprenant :
    - une première source lumineuse semi-conductrice (1), avec une première diode (11) émettant de la lumière, qui en service dégage une lumière dans une première gamme de longueurs d'onde, avec une première intensité, la première gamme de longueurs d'onde et/ou la première intensité faisant preuve d'une première dépendance thermique,
    - une deuxième source lumineuse semi-conductrice (2) avec une deuxième diode (21, 22) émettant de la lumière, qui en service dégage une lumière dans une deuxième gamme de longueurs d'onde, avec une deuxième intensité, la première et la deuxième gammes de longueurs d'onde étant différentes l'une de l'autre et la deuxième gamme de longueurs d'onde et/ou la deuxième intensité faisant preuve d'une deuxième dépendance thermique qui est différente de la première dépendance thermique,
    - une troisième source lumineuse semi-conductrice (3) avec une troisième diode (31) émettant de la lumière, qui en service dégage une lumière dans une troisième gamme de longueurs d'onde, avec une troisième intensité,
    - un élément à résistance (4) avec une résistance électrique dépendant de la température et
    - un élément de commande (9) de source lumineuse semi-conductrice pour commander l'intensité de la troisième source lumineuse semi-conductrice (3),
    - sachant que sont commutés en montage en parallèle : un premier couplage en série avec l'élément de résistance (4) et la première source lumineuse semi-conductrice (1) dans une première branche (101) du montage en parallèle, la deuxième source lumineuse semi-conductrice (2) dans une deuxième branche (102) du montage en parallèle et un deuxième couplage en série avec la troisième source lumineuse semi-conductrice (3) et l'élément de commande (9) de source lumineuse semi-conductrice dans une troisième branche (103) du montage en parallèle,
    caractérisé en ce que
    la première dépendance thermique est inférieure à la deuxième dépendance thermique et en ce que l'élément de résistance (4) est un élément de résistance avec un coefficient thermique positif ou la première dépendance thermique est supérieure à la deuxième dépendance thermique et l'élément de résistance (4) est un élément de résistance avec un coefficient thermique négatif,
    dans le montage en parallèle n'est présent qu'un élément de commande de source lumineuse semi-conductrice, à savoir l'élément de commande (9) de source lumineuse semi-conductrice dans la troisième branche (103).
  2. Dispositif selon la revendication 1,
    dans un premier état, l'élément de commande (9) de source lumineuse semi-conductrice bloquant le flux électrique à travers la troisième branche (103) et dans un deuxième état, libérant le flux électrique à travers la troisième branche (103).
  3. Dispositif selon la revendication 2 qui est discrètement commutable entre le premier et le deuxième état.
  4. Dispositif selon la revendication 2, le flux électrique à travers la troisième branche (103) étant variable en continu.
  5. Dispositif selon l'une quelconque des revendications 1 à 4, l'élément de commande (9) de source lumineuse semi-conductrice comprenant un transistor (9) sur lequel peut être appliquée une tension de commande (Us).
  6. Dispositif selon la revendication 5, le transistor étant conçu en tant que MOSFET à canal N (9) ou en tant que MOSFET à canal P (9).
  7. Dispositif selon la revendication 5 ou la revendication 6, un potentiomètre (5) étant prévu pour le réglage de la tension de commande (Us).
  8. Dispositif selon la revendication 5, la revendication 6 ou la revendication 7, un diviseur de tension (5, 6) étant prévu pour le réglage de la tension de commande (Us).
  9. Dispositif selon l'une quelconque des revendications 1 à 8, dans l'un des états, l'éclairage mixte étant blanc chaud et dans l'autre état, étant blanc froid.
  10. Dispositif selon l'une quelconque des revendications 1 à 9, la troisième source lumineuse semi-conductrice (3) étant adaptée pour émettre de la lumière bleue.
  11. Dispositif selon l'une quelconque des revendications 1 à 10, conçu en tant que module avec des raccords pour l'application d'une tension d'alimentation (U).
  12. Dispositif selon la revendication 11, un raccordement étant prévu pour l'application d'un potentiel destiné à activer l'élément de commande (9) de source lumineuse semi-conductrice.
EP11720049.3A 2010-03-31 2011-03-30 Dispositif optoélectronique Not-in-force EP2554019B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102010013493A DE102010013493A1 (de) 2010-03-31 2010-03-31 Optoelektronische Vorrichung
PCT/EP2011/054960 WO2011121046A1 (fr) 2010-03-31 2011-03-30 Dispositif optoélectronique

Publications (2)

Publication Number Publication Date
EP2554019A1 EP2554019A1 (fr) 2013-02-06
EP2554019B1 true EP2554019B1 (fr) 2017-06-21

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EP11720049.3A Not-in-force EP2554019B1 (fr) 2010-03-31 2011-03-30 Dispositif optoélectronique

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US (1) US9538609B2 (fr)
EP (1) EP2554019B1 (fr)
KR (1) KR20130025394A (fr)
CN (1) CN103098545B (fr)
DE (1) DE102010013493A1 (fr)
WO (1) WO2011121046A1 (fr)

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DE102014206434A1 (de) * 2014-04-03 2015-10-08 Osram Gmbh Ansteuerung von Halbleiterleuchtelementen
EP3295770B1 (fr) * 2015-05-08 2020-12-23 Signify Holding B.V. Rampe lumineuse à del et son procédé de fabrication

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US20130088166A1 (en) 2013-04-11
CN103098545B (zh) 2016-03-02
DE102010013493A1 (de) 2011-10-06
CN103098545A (zh) 2013-05-08
EP2554019A1 (fr) 2013-02-06
US9538609B2 (en) 2017-01-03
WO2011121046A1 (fr) 2011-10-06

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