EP2554019A1 - Dispositif optoélectronique - Google Patents

Dispositif optoélectronique

Info

Publication number
EP2554019A1
EP2554019A1 EP11720049A EP11720049A EP2554019A1 EP 2554019 A1 EP2554019 A1 EP 2554019A1 EP 11720049 A EP11720049 A EP 11720049A EP 11720049 A EP11720049 A EP 11720049A EP 2554019 A1 EP2554019 A1 EP 2554019A1
Authority
EP
European Patent Office
Prior art keywords
light source
semiconductor light
temperature
intensity
branch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP11720049A
Other languages
German (de)
English (en)
Other versions
EP2554019B1 (fr
Inventor
Ralph Wirth
Horst Varga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of EP2554019A1 publication Critical patent/EP2554019A1/fr
Application granted granted Critical
Publication of EP2554019B1 publication Critical patent/EP2554019B1/fr
Not-in-force legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B47/00—Circuit arrangements for operating light sources in general, i.e. where the type of light source is not relevant
    • H05B47/20—Responsive to malfunctions or to light source life; for protection
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B47/00—Circuit arrangements for operating light sources in general, i.e. where the type of light source is not relevant
    • H05B47/10—Controlling the light source
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/20—Controlling the colour of the light
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/20—Controlling the colour of the light
    • H05B45/28—Controlling the colour of the light using temperature feedback

Definitions

  • Optoelectronic Device An optoelectronic device for emitting mixed light is specified.
  • LEDs light-emitting diodes
  • a stabilizing member is shown in the non-prepublished DE application 10 2008 057 347.7.
  • CCT color temperature
  • color temperature controllable light sources for example, to vary between warm and cold white light.
  • Typical realizations color temperature controllable light sources have an optical and / or thermal sensor, a microcontroller and a plurality of LED drivers for the control of the LEDs.
  • typical LED characteristics are stored in the microcontroller.
  • the object is a color temperature-controllable and color-stabilized light source with a simple structure
  • a first semiconductor light source having a first light-emitting diode which in operation emits light in a first wavelength range with a first intensity, wherein the first wavelength range and / or the first intensity has a first temperature dependence
  • a second semiconductor light source having a second light-emitting diode which in operation emits light in a second wavelength range having a second intensity
  • Wavelength range are different from each other and wherein the second wavelength range and / or the second intensity has a second temperature dependence, which is different from the first temperature dependence,
  • a third semiconductor light source having a third light-emitting diode which emits light in a third wavelength range with a third intensity during operation
  • the resistance element causes a temperature stabilization, since it depends on the different temperature dependence of the first and second semiconductor light source, of which the
  • the semiconductor light source control element is the intensity of the third semiconductor light source
  • the set color temperature of the mixed light changes slightly with temperature change than would be the case without temperature compensation by the resistance element.
  • a temperature increase occurs in normal operation, for example, when the device after the
  • the optoelectronic device enables the compensation of the physical properties of the semiconductor light sources by a suitably selected temperature-dependent
  • light may refer to electromagnetic radiation having one or more wavelengths or wavelength ranges from an ultraviolet to infrared spectral region, More specifically, light may be visible light and wavelengths or wavelength ranges from a visible spectral range between about 350 nm and about 800 nm
  • the visible light can be defined by its color location with x and y color coordinates according to a person skilled in the art
  • CIE-1931-Farborttafel CIE standard color chart.
  • Color impression may be designated light having a color locus which corresponds to the color locus of a blackbody planckers radiator or differs by less than 0.1 and preferably by less than 0.05 in x- and / or y-color coordinates from the color location of a plank black body radiator.
  • a luminous impression referred to here and hereinafter as a white luminous impression, can be caused by light having a color rendering index (CRI) of greater than or equal to 60, preferably greater than or equal to 70, and particularly preferably greater than or equal to equal to 80.
  • CRI color rendering index
  • warm white may be a luminous impression that has a color temperature of less than or equal to 5500 K.
  • white may be a white luminous impression that has a color temperature greater than
  • 5500 K has.
  • the range around 5500 K can be described as neutral white.
  • color temperature can the Color temperature of a planck blackbody radiator or also known to those skilled so-called correlated color temperature (CCT) in the case of a white luminous impression in the above
  • Different light impressions by light of different perceivable color locations can in particular by mutually different first and second wavelength ranges
  • Wavelength range may be said to be different if, for example, the first wavelength range has at least one spectral component that is not in the second
  • Wavelength range is included.
  • Wavelength ranges cause respective luminance and color impressions with different x and / or different y coordinates in the CIE standard color chart.
  • the resistance element may be in thermal contact with the first and / or the second and / or the third semiconductor light source and thus with the first and / or second and / or third light-emitting diode (LED). This can mean that the temperature of the
  • Temperature dependencies of the first and second intensity and / or the first and second wavelength ranges may vary depending on the ambient and Operating temperature the light impressions of
  • Semiconductor light sources can thus also the luminous impression of the superposition, so the mixed light, also change. Due to the resistance element, it can be present at the present
  • Optoelectronic device be possible to produce a mixed light having the lowest possible temperature dependence in terms of its color locus.
  • Temperature dependence be. This means that with increasing temperature, for example, the first intensity of the first semiconductor light source changes less than the second one
  • the resistance element is a resistance element having a positive temperature coefficient, which means that the electrical resistance of the resistance element increases with increasing temperature and the resistance element as PTC ("positive temperature coefficient")
  • Resistor element is executed. If the temperatures of the first and second semiconductor light sources increase, for example, as a result of an increase in the ambient temperature, then, in the aforementioned case, the second intensity decreases more than the first intensity. This means that the color location of the mixed light would be shifted toward the color location of the first semiconductor light source.
  • the PTC element In the PTC element
  • the resistive element is a resistive element having a negative temperature coefficient, which means that the electrical resistance of the resistive element decreases with increasing temperature and the resistive element as NTC ("negative temperature
  • the resistance element can have a
  • Have temperature-dependent electrical resistance which is adapted to the first and second temperature dependence of the first and second semiconductor light source.
  • the resistance element has no switching behavior and that the electrical resistance does not change abruptly in a temperature range of -40 ° C to 125 ° C.
  • the electrical resistance of the resistive element in a temperature range of greater than or equal to -40 ° C and less than or equal to 125 ° C continuously, that means that the electrical resistance depending on the design of the resistive element as PTC thermistor or thermistor with a substantially constant Temperature dependence increases or decreases.
  • the resistance element has a linear or approximately linear resistance-temperature dependence. In one embodiment, this locks
  • the current flow through the third branch substantially and substantially releases the flow of current through the third branch in a second state.
  • the power supply to the third semiconductor light source is interrupted or at least reduced so that it does not emit light; in the second state, it emits light.
  • Semiconductor light source is switched on and off, to switch between two color temperatures of the mixed light back and forth.
  • the current flow through the third branch between the first and the second state is continuously variable. This allows the color temperature to change continuously.
  • Semiconductor light source control element a transistor to which a control voltage can be applied.
  • the transistor controls the current flow as a function of the applied control voltage through the third branch and thus the intensity of the light emitted by the third semiconductor light source.
  • the transistor may be formed as an N-channel MOSFET or P-channel MOSFE, which provides degrees of freedom in the
  • a potentiometer for adjusting the control voltage may be provided.
  • a voltage divider for adjusting the control voltage is provided.
  • the control voltage can drop, which is applied to the transistor.
  • a voltage divider with a potentiometer can be changed by changing the
  • the mixed light is in one of
  • a white light emitting device having a cold white first semiconductor light source and a second light source emitting red light
  • a third semiconductor light source capable of emitting blue light. If the third
  • the device is a module
  • the module is formed so that the elements of the device are arranged in a housing.
  • two terminals for applying a supply voltage are provided.
  • the module is in addition to the
  • FIG. 1 is a circuit diagram of an optoelectronic
  • FIG. 2 shows a section of the CIE standard color chart with a line along which the device can be controlled
  • FIG. 3 shows a section of the CIE standard color chart with color loci of the light emitted by the device with stabilization and by a comparison device without stabilization
  • FIG. 4 shows the wiring of a P-channel MOSFET
  • FIG. 5 shows the wiring of an N-channel MOSFET.
  • Figure 1 shows a circuit diagram or a
  • the first semiconductor light source 1 comprises a first LED 11, which emits light in a first, cold-white wavelength range. Also light emission in the yellowish-green range is conceivable.
  • the second semiconductor light source 2 comprises a series connection of two second LEDs 21, 22, which emit red light in a second wavelength range.
  • the third semiconductor light source 3 comprises a third LED which emits blue light in a third wavelength range.
  • further LEDs 7, 8 are provided which emit light in the first wavelength range.
  • the provision of the further LEDs 7, 8 is optional. It can also be provided none, one or more than two. Your lighting impression is not limited to white.
  • first, second and third resistance elements 4, 5, 6 are provided.
  • the first resistance element 4 is
  • the first resistance element 4 is a PTC resistance element.
  • a second resistance element 5 has a variable
  • This resistance element is designed as a potentiometer.
  • the resistance of the third resistance element 6 is fixed.
  • the circuit arrangement further comprises a MOSFET, which serves as a semiconductor light source control element 9, with a gate, a source and a drain terminal 91, 92, 93.
  • the configured semiconductor light source control element 9 are connected as follows: In a first branch 101, the first semiconductor light source 1 is connected in series with the first resistive element 4. In a second branch 102, the second semiconductor light source 2 is arranged with the two LEDS 21, 22, and in a third branch 103, the MOSFET configured as a semiconductor light source control element 9 is connected in series with the third semiconductor light source 3, wherein the drain terminal 93 with the third LED 31 is connected.
  • the first, second and third branches 101, 102, 103 are connected in parallel. In series with the parallel circuit are the other two
  • Resistor element 5, 6 connected.
  • the second and third resistance elements 5, 6 serve as voltage dividers. Between the second and third resistance element 5, 6, a control voltage is tapped, which at the gate terminal 91 of the designed as a MOSFET
  • Semiconductor light source control element 9 is applied.
  • Semiconductor light source 2 and blue emitting third semiconductor light source 3 can also be any other combination of semiconductor light sources with emission spectra in others
  • Wavelength ranges are used when a different color and light impression of the mixed light is desired.
  • the color of the third semiconductor light source 3 is not limited to blue.
  • the mixed light of the first and second semiconductor light sources 1, 2 is warm white, without contribution of the third semiconductor light source 3.
  • the third LED 3 which emits blue light, becomes the color temperature of the
  • phosphor-converted blue LEDs allows efficient construction of a light source in which the color temperature is controllable along the white curve, which is of great interest for SSL (Solid-State-Lighting) or applications.
  • Applications can use the potential of LEDs for color-controllable light sources.
  • the color locus stabilization of white and red LEDs 11, 21 is advantageous, since the emitted light of the red LEDs 21 is displaced more in the long wavelength range with temperature increase and at the same time they lose more efficiency or intensity than the light of the white LEDs 11, 7, 8 and the blue LED 31.
  • the white LEDs change color location due to decreasing phosphorus efficiency with increasing temperature.
  • Resistor element 3 a control is achieved, which reduces the Farbortverschiebung.
  • the frame 100 identifies the white point stabilizing element of the optoelectronic circuit
  • Semiconductor light source 1, 2 and the PTC resistor element 4th includes. The operation of this stabilizing member will be explained below.
  • Resistor element 4 more current through the second
  • Semiconductor light source 2 flows.
  • Wavelength shift of the emitted light from the second LEDs 21, 22 results, as would be possible with sole control of the operating current of the second semiconductor light source 2.
  • the PTC resistance element 4 may also be formed as an NTC element, when the first and second semiconductor light source 1, 2 are designed such that the first temperature dependence of the first intensity is greater than the second temperature dependence of the second intensity.
  • Semiconductor light source 3 in the third path extends this principle and makes it possible to stabilize a light source which can be controlled between cold and warm white.
  • the third branch 103 with the third LED 31 can be substantially blocked by the semiconductor light source control element 9 designed as a MOSFET in a first state, so that the third LED 31 does not emit light. In this case, the mixed light of the light source is warm white. In a second state, the third branch 103 is through as a MOSFET
  • Semiconductor light source control element 9 abutting Control voltage Us.
  • the release can also take place partially and takes place at the expense of the other branches 101, 102, since the current now flows over three branches 101, 102, 103. When released, the mixed light becomes colder.
  • Resistor element 5, 6, the control voltage Us for the designed as a MOSFET semiconductor light source control element 9 is set.
  • the trained as a potentiometer second resistor element 5 allows the control voltage to
  • This circuit arrangement makes it possible to stabilize the cold white and warm white controllable light source by means of the PTC resistor element 4.
  • an NTC resistance element (not shown) may be provided for this purpose.
  • Control voltage Us can be set.
  • Resistor element 4 changes not only the current in the first and in the second branch 101, 102, but if
  • the gate terminal 91 may remain unconnected as a further pin of the LED component and the control voltage may be externally set, e.g. controlled by a digital potentiometer via DMX or Dali interfaces.
  • the elements shown in Figure 1 except for the voltage source U and the voltage divider 5, 6, as indicated by the frame 200 formed as a module and be arranged in a housing, in addition to terminals for the supply voltage U yet another Having connection for applying the control potential.
  • FIG. 2 shows a section of the CIE standard color chart in FIG.
  • Line 900 marks the so-called white curve of a planck blackbody radiator at various
  • the regions 910, 920, 930, 940, 950, 960, 970, 980 are color temperature ranges of a so-called ANSI binning system, which classifies color temperatures of white into classes.
  • the area 910 is 6500K, which is cold white light is.
  • the range 920 corresponds to 5700K, which is also to be regarded as cold white light.
  • the area 930 corresponds to 5000K, which is to be regarded as a neutral white light.
  • the area 940 corresponds to 4500K.
  • the area 950 corresponds to 4000K.
  • the area 960 corresponds to 3500K.
  • the area 970 corresponds to 3000K.
  • the area 980 corresponds to 2700K.
  • FIG. 3 shows a detail of the CIE standard color chart in the range of the color coordinate x between 0.28 and 0.48 and in the region of the color coordinate y between 0.24 and 0.44.
  • the 900 line marks the white curve.
  • areas 910, 920, 930, 940, 950, 960, 970, 980 of the ANSI binning system are also shown.
  • the unfilled marks 911, 921, 931, 941, 951 are the color loci of a comparative circuit arrangement without
  • Color stabilization ie without PTC resistance element, at a temperature of 25 degrees Celsius, which corresponds to the state immediately after switching on the light source.
  • the different markings 911, 921, 931, 941, 951 correspond to different color loci, when changing the color temperature of the circuit arrangement
  • the hatched marks 912, 922, 932, 942, 952 show the color loci of the mixed light in a color locus stabilization circuit by means of a PTC resistance element 4 at a temperature of 25 degrees
  • Light source corresponds.
  • the various markings 912, 922, 932, 942, 952 correspond to different ones
  • the filled marks 913, 923, 933, 943, 953 show the color loci stabilized with the PTC resistor element 4 at a temperature of 75 degrees Celsius, both for the circuit arrangement without and with color locus stabilization.
  • the group of markers 911, 912, 913 shows the color loci for two circuit arrangements with or without PTC resistance element 4, which are set to light at the same color location 913 at 75 degrees Celsius
  • the group of mark 951, 952, 953 shows this effect in warm white light.
  • the deviation between the color loci 912, 922, 932, 942, 952 of the stabilized circuitry after power up, i. at 25 degrees Celsius, and the color loci 913, 923, 933, 943, 953 after reaching the operating temperature, i. at 75 degrees Celsius, is low. Especially in the warm and neutral white range the deviations of the color temperature remain
  • FIGS 4 and 5 illustrate once again in the third branch, the control of the third LED 31 via the
  • Figure 4 shows a P-channel MOSFET as
  • Source terminal 92 and the third diode 31 is the
  • control voltage Us can be changed between OV and 10V.
  • the P-channel MOSFET as the semiconductor light source control element 9 is very suitable for use in a module provided with only one other terminal or pin for applying the control potential.
  • the supply voltage can be applied to the pins 41, 42, to the latter is the reference potential. Since over the pin 41 already the
  • the module should have a comparatively high supply voltage as the gate-source voltage to external
  • Control voltage is desired, this is also feasible by the gate terminal 91 of the MOSFET is carried out unconnected.
  • FIG. 5 shows an exemplary embodiment of a

Landscapes

  • Led Devices (AREA)
  • Circuit Arrangement For Electric Light Sources In General (AREA)

Abstract

Le dispositif optoélectronique selon l'invention pour l'émission de lumière mixte comprend : - une première source de lumière à semi-conducteurs (1) comportant une première diode électroluminescente (11) qui émet en fonctionnement de la lumière dans une première plage de longueurs d'ondes avec une première intensité, la première plage de longueurs d'ondes et/ou la première intensité présentant une première dépendance à la température, - une deuxième source de lumière à semi-conducteurs (2) comportant une deuxième diode électroluminescente (21, 22) qui émet en fonctionnement de la lumière dans une deuxième plage de longueurs d'ondes avec une deuxième intensité, la première et la deuxième plage de longueurs d'ondes étant différentes l'une de l'autre et la deuxième plage de longueurs d'ondes et/ou la deuxième intensité présentant une deuxième dépendance à la température qui est différente de la première dépendance à la température, - une troisième source de lumière à semi-conducteurs (3) comportant une troisième diode électroluminescente (31) qui émet en fonctionnement de la lumière dans une troisième plage de longueurs d'ondes avec une troisième intensité, - un élément résistance (4) comportant une résistance électrique dépendant de la température, et - un élément de commande de source de lumière à semi-conducteurs (9) pour la commande d'intensité de la troisième source de lumière à semi-conducteurs (3), - les éléments suivants étant connectés en parallèle : un premier circuit en série comportant l'élément résistance (4) et la première source de lumière à semi-conducteurs (1) dans une première branche (101) du circuit en parallèle, la deuxième source de lumière à semi-conducteurs (2) dans une deuxième branche (102) du circuit en parallèle et un deuxième circuit en série comportant la troisième source de lumière à semi-conducteurs (3) et l'élément de commande de source de lumière à semi-conducteurs (9) dans une troisième branche (103) du circuit en parallèle.
EP11720049.3A 2010-03-31 2011-03-30 Dispositif optoélectronique Not-in-force EP2554019B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102010013493A DE102010013493A1 (de) 2010-03-31 2010-03-31 Optoelektronische Vorrichung
PCT/EP2011/054960 WO2011121046A1 (fr) 2010-03-31 2011-03-30 Dispositif optoélectronique

Publications (2)

Publication Number Publication Date
EP2554019A1 true EP2554019A1 (fr) 2013-02-06
EP2554019B1 EP2554019B1 (fr) 2017-06-21

Family

ID=44118892

Family Applications (1)

Application Number Title Priority Date Filing Date
EP11720049.3A Not-in-force EP2554019B1 (fr) 2010-03-31 2011-03-30 Dispositif optoélectronique

Country Status (6)

Country Link
US (1) US9538609B2 (fr)
EP (1) EP2554019B1 (fr)
KR (1) KR20130025394A (fr)
CN (1) CN103098545B (fr)
DE (1) DE102010013493A1 (fr)
WO (1) WO2011121046A1 (fr)

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US9271368B2 (en) 2012-12-07 2016-02-23 Bridgelux, Inc. Method and apparatus for providing a passive color control scheme using blue and red emitters
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DE102014206434A1 (de) * 2014-04-03 2015-10-08 Osram Gmbh Ansteuerung von Halbleiterleuchtelementen
EP3295770B1 (fr) * 2015-05-08 2020-12-23 Signify Holding B.V. Rampe lumineuse à del et son procédé de fabrication

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US8779685B2 (en) * 2009-11-19 2014-07-15 Intematix Corporation High CRI white light emitting devices and drive circuitry

Also Published As

Publication number Publication date
CN103098545B (zh) 2016-03-02
CN103098545A (zh) 2013-05-08
EP2554019B1 (fr) 2017-06-21
KR20130025394A (ko) 2013-03-11
US9538609B2 (en) 2017-01-03
DE102010013493A1 (de) 2011-10-06
WO2011121046A1 (fr) 2011-10-06
US20130088166A1 (en) 2013-04-11

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