EP2529386A1 - Dispositif de revêtement comprenant une source de puissance hipims (pulvérisation à magnétron pulsé à haute puissance) - Google Patents

Dispositif de revêtement comprenant une source de puissance hipims (pulvérisation à magnétron pulsé à haute puissance)

Info

Publication number
EP2529386A1
EP2529386A1 EP11701627A EP11701627A EP2529386A1 EP 2529386 A1 EP2529386 A1 EP 2529386A1 EP 11701627 A EP11701627 A EP 11701627A EP 11701627 A EP11701627 A EP 11701627A EP 2529386 A1 EP2529386 A1 EP 2529386A1
Authority
EP
European Patent Office
Prior art keywords
cathodes
etching
power source
coating
pulses
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP11701627A
Other languages
German (de)
English (en)
Inventor
Frank Papa
Roel Tietema
Anthonie KALAND
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IHI Hauzer Techno Coating BV
Original Assignee
Hauzer Techno Coating BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hauzer Techno Coating BV filed Critical Hauzer Techno Coating BV
Publication of EP2529386A1 publication Critical patent/EP2529386A1/fr
Withdrawn legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3438—Electrodes other than cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3444—Associated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/3467—Pulsed operation, e.g. HIPIMS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Definitions

  • the present invention relates to a coating apparatus having a vacuum chamber, a plurality of cathodes disposed therein, and a HIPIMS power source.
  • a device of this type is disclosed in International Patent Application Publication No. WO
  • WO 2007/1 15819 is primarily concerned with the design of the voltage source for the substrate bias
  • the present application is concerned with the design of the HIPIMS power source, which is used to introduce the electrical power to the coating cathode or to the coating cathodes becomes.
  • HIPIMS means high power impulse magnetron sputtering
  • Etching is understood as meaning the cleaning of the surface of the substrates or of the workpieces by means of high-energy ions which impinge on the surface in the plasma of a vacuum chamber in order to remove impurities or surface material, but partly to partially dissolve the etching-processing ions in the surface treatment. surface of the substrates or workpieces.
  • a transition layer from the substrate to the coating is provided, for example with an increasing concentration of the elements used for the coating or for the adhesion of the coating Elements, and this leads to an improved adhesion of the actual coating on the substrates or on the workpieces.
  • cathodes are used from the coating material, which have a relatively large surface area, at least in large plants.
  • the coating is made with a current density or power density determined by the size or capability of the HIPIMS power source and the area of the cathode.
  • the corresponding current density or power density is not optimal for the etching process.
  • the object of the present invention is to design a coating device of the type mentioned above so that it is better designed for the etching process and works more effectively.
  • a coating device of the type mentioned in the introduction in addition to at least one coating cathode which is operable with the HIPIMS power source, a plurality of etching cathodes smaller in area than the coating cathode are provided, which in a predetermined or specified sequence can be connected to the HIPIMS power source.
  • the arrangement according to the invention makes it possible to use the same HIPIMS power source for the etching cathodes, which is also used for the coating cathode, without making the HIPIMS power source larger, which can save considerable costs and expense.
  • the individual substrates or workpieces are arranged on a rotatable table, wherein the individual workpieces are often themselves rotated about their own axis during the coating. Due to the fact that the workpiece table or the holder for the workpieces rotates about the longitudinal axis of the vacuum treatment chamber and the individual workpieces are possibly rotated about their own axes parallel to the longitudinal axis of the vacuum chamber, any irregularities in the coating flow from the coating cathodes or in the flow the ⁇ t condominiumn compensated in the etching process, so that the substrates are uniformly treated or coated on its surface.
  • the etching cathodes can also be used as coating cathodes. For this purpose they can be combined and fed together with the power pulses of the HIPIMS power source. However, they could still be fed sequentially from the HIPIMS power source, usually with reduced power matched to the coating process. As a result, the etching cathodes need not be used exclusively for the etching treatment, but they can also be used for coating, and again has the advantage that the spatially separated arrangement of the etching cathodes due to the movement of the substrates or workpieces in the treatment chamber not to a leads to uneven coating.
  • the coating device is characterized in that the HIPIMS power source consists of a DC part and a switching part, which generates power pulses of a predetermined frequency for the coating cathode, and that in operating the coating device in the etching mode, the power pulses with the given frequency to the individual etching cathodes are applied in a predetermined or predeterminable order, whereby the etching cathodes are successively fed with the individual power pulses of the HIPIMS power source.
  • This embodiment is particularly easy to implement, since no technical changes to the HIPIMS power source are necessary, but it must only be provided an additional switching device to the individual power pulses of the HIPIMS power source to the etching cathodes in the predetermined manner or in the predetermined Create order.
  • This switching device can be implemented separately from the HIPIMS power source or as part of the HIPIMS power source.
  • An alternative coating device is characterized in that the HIPIMS power source consists of a DC part and a switching part which generates power pulses of a predetermined frequency for the coating cathode, and that in the etching mode, the HIPIMS power source is operable to be between the Power pulses with the predetermined frequency provides at least further pulses and that the pulses delivered in total can be applied one after the other to the etching cathodes, whereby the etching cathodes can be successively fed with the individual pulses of the HIPIMS power source.
  • the switching part of the HIPIMS power source must be slightly modified in order to generate the further power pulses. Depending on the specific design of the HIPIMS power source, this can lead to additional complication in the switching part, and it may also be necessary to slightly increase the performance of the DC part of the HIPIMS power source (the DC part). Overall, however, a much more effective and faster-running etching process is possible with little effort. It should also be said that the DC part of the HIPIMS power source is the part that costs most.
  • the switching part is relatively inexpensive and can oh- ne further be designed so that it also works with a higher predetermined frequency or can be operated so that the other pulses are available, without resulting in significant costs.
  • a further coating device is characterized in that the HIPIMS power source consists of a DC part and a switching part which generates power pulses of a predetermined frequency for the coating cathode, and in the etching mode the HIPIMS power source is operable to interpose At least one further pulse provides the power pulses with the predetermined frequency, and that the pulses delivered in total can be applied in groups to the etching cathodes in sequence, whereby the etching cathodes can be successively fed with the individual groups of pulses.
  • This embodiment provides that instead of feeding the etching cathode with a power pulse and then switching directly to the next etching cathode, several pulses can be applied to a first etching cathode, ie groups of pulses, and only then switched to the next etching, the corresponding can be fed with groups of pulses.
  • FIG. 1 of WO 2007/1 15819 showing the basic embodiment of a magnetron sputtering system with HIPIMS power source, a representation of the power pulse train of a HIPIMS power source as it can be used in the device according to FIG. 1 and in the present invention
  • FIG. a representation similar to that of FIG. 1 but of a coating device according to the invention
  • FIG. a representation similar to FIG.
  • FIG. 5 shows a further illustration similar to that of FIG. 5 in order to show how the individual pulses of the HIPIMS power source in groups of individual etching cathodes can be applied.
  • a vacuum coating apparatus 10 for treating and coating a plurality of substrates 12.
  • the apparatus consists of a metal vacuum chamber 14, which in this example has two oppositely disposed cathodes 16, each equipped with its own HIPIMS power source 18 (only one of which is shown here) for the purpose of generating ions from a material that is in the gas phase in the
  • Chamber is present and / or ions of a material of which the respective cathode or cathodes is or are formed.
  • (Workpieces) 12 are mounted on a substrate support 20 in the form of a table which can be rotated in the direction of arrow 22 by an electric motor 24 which drives a shaft 26 which is connected to the substrate support.
  • the shaft 26 passes through a passage 28 at the bottom of the chamber 14 in a sealed and isolated manner, which is well known in the art.
  • This substrate bias supply 32 is here identified by the letters BPS, which is an abbreviation for Bias Power Supply.
  • the substrates 12 mounted on the vertical columns 29 are thereby held at the voltage applied to the terminal 30 of the bias power supply 32 when the switch 34 is closed.
  • the metallic housing 14 of the device 10 is connected to ground 36, and this is also the positive terminal of the device.
  • the positive terminal of the HIPIMS power source 18 is also If connected to the housing 14 and therefore to ground 36, as well as the positive terminal 38 of the substrate bias supply 32nd
  • a spigot 40 which is connected via a valve 42 and another line 44 to a vacuum system for evacuation of the treatment chamber 14.
  • the vacuum system is not shown but is in this field well known.
  • Another line 50 which allows the supply of one or more suitable gases in the vacuum chamber 14, is also connected to the upper part of the vacuum chamber via a valve 48 and a connecting piece 46.
  • an inert gas such as argon may be introduced into the vacuum chamber or a gas such as nitrogen or acetylene for the deposition of nitrides or carbon coatings or carbenitrite coatings by reactive sputtering.
  • Vacuum coating devices of the type generally described are known in the art and often equipped with more than two cathodes 16.
  • Hauzer Techno Coating BV has available a vacuum coating apparatus in which the chamber 10 is generally octagonal in cross-section, with four doors opening outwardly, each carrying a magneton cathode 16.
  • These cathodes can be made of the same material, but often are made of different materials so that coatings of the different materials can be built up in layers on the substrates or articles such as 12.
  • a typical vacuum deposition apparatus also includes a variety of other features not shown in the schematic drawing of Figure 1, such as dark field shields, heaters for preheating the substrates 12, and sometimes electron beam sources or plasma sources of various shapes.
  • the initial air in the vacuum chamber 14 is evacuated by the vacuum pumping system via line 44, valve 42, and line 40, and an inert gas, such as argon and / or active gases, flow into the chamber via line 50, Valve 48 and the connecting piece 46. Therefore, the air that is initially present in the chamber, taken from this and the vacuum chamber 14 is purged with inert gas or with reactive gases. Simultaneously or subsequently, the heaters (not shown) may be operated to preheat the substrates and expel any volatile gases or compounds present on the articles 12.
  • an inert gas such as argon and / or active gases
  • the inert gas introduced into the chamber is inevitably ionized to some degree, for example due to cosmic radiation, and is divided into electrons and inert gas ions, for example argon ions.
  • the argon ions are attracted to the cathodes and collide there with the material of the target, ie the cathodes, whereby ions of the cathode material are knocked out and secondary electrons are generated.
  • Each of the cathodes is associated with a magnet system (not shown but well known in itself) which typically generates a closed loop magnetic tunnel extending over the surface of the cathode. This closed-loop magnetic tunnel forces the electrons to travel in orbits around the closed loop to move and to generate further ionizations by collisions.
  • the coating mode which, with a suitable power supply for the cathodes, causes a flow of atoms and ions of the cathode material to move into the space occupied by the workpieces 12, which rotate on the substrate carrier.
  • the substrates are then coated with the material of the cathode.
  • a reactive gas such as acetylene is in the vacuum chamber, a corresponding coating forms on the substrates.
  • the cathode consists of Ti
  • the acetylene (C2H2) is split into C and H atoms and a coating of TiC is formed on the workpieces, the hydrogen is partially deposited in the coating and partially by the vacuum system from the vacuum chamber away.
  • the movement of the ions towards the substrates 12 on the substrate carrier 20 is effected by the negative bias applied to the substrate holder (s).
  • Other non-ionized material atoms of the cathodes 16 receive sufficient kinetic energy, so that they also push into the space in front of the cathodes 16 and form a coating on the objects 12 there.
  • the inert gas ions are also attracted to the substrates, ie the workpieces, and serve to to increase the density of the coating. It is understood that the bias applied to the substrates acts to attract the ions of the cathode material that are knocked out of the surface of the cathode and that form in the plasma in front of the cathode 16.
  • Sputtering processes are known in various designs. There are those that are performed with a constant negative voltage on the cathodes 16 and a constant negative bias on the substrate holder. This is described as DC magnetron sputtering. Pulsed DC sputtering is also known in which at least one of the cathode supplies is operated in a pulsed mode. In addition, the bias supply for the substrate carrier may also be operated in pulsed mode. This may be particularly advantageous with cathodes made of a semi-insulating material.
  • the power consumed by each cathode 16 may be between 16 and 20 kW.
  • the cathodes are no longer supplied with a constant direct current, but a much higher power is used, which is attached only in relatively short pulses.
  • the power pulses may be generated by the HIPIMS power source 18 having a duration of 10 and a pulse repetition time of 200 ⁇ corresponding to a pulse repetition frequency of 5000 Hz, ie, a spacing between successive pulses of 190 ⁇ .
  • the specified values are to be understood as purely exemplary and can be varied within wide limits. For example, can readily with a pulse duration in the range between 10 and 30 ms and with a pulse repetition time between 200 ⁇ and 100 ms are worked.
  • the average power can be maintained at a moderate level corresponding to the power level during normal magnetron sputtering in the DC mode.
  • high power pulses to the cathode or cathodes, they operate in a different mode of operation in which a very high degree of ionization of the metal vapor emanating from the cathode or cathodes occurs
  • the ionization can easily be in the range between 40% and even up to 100%. Due to this high degree of ionization, many more ions are attracted to the substrates and arrive there at higher speeds, resulting in denser coatings and a faster coating process.
  • an additional voltage source 60 is provided.
  • This voltage source 60 is most easily realized by a capacitor which is charged by a common bias supply, to a voltage which corresponds to the desired output voltage. If a power pulse from the HIPIMS power source 18 is applied to the cathode 16, then, as mentioned above, this results in a material Alpound, which consists essentially of ions from the cathode 16 and is executed to the substrates 12.
  • This increase in the ion flux means an increase in the current at the substrate holder 20 and through the line 27 of, for example, about 40 amperes.
  • a normal bias supply 32 could not provide such a high peak current if it were designed for DC operation rather than a HIPIMS operation.
  • the capacitor 62 which is charged by the bias supply during the pauses between each of the high power pulses of the cathode supply 18, is able to maintain the desired bias on the substrate holder 20 within narrow limits and provide the required current, which requires only a slight discharge of the capacitor caused.
  • the substrate bias remains at least substantially constant.
  • the discharge can proceed in such a way that an intended bias of, for example, -50 V drops to, for example, -40 V during the coating process.
  • the bias power supply 32 in the form shown in Fig. 1 is therefore basically capable of enabling a HIPIMS magnetron sputtering process.
  • the bias voltage supply 32 can also be equipped with an arc protection function.
  • detectors such as 64 can be seen, which determine the current flowing in the line 32 current and can be used to actuate a semiconductor switch 34 to open in the event of an arc, the switch 34 and therefore to interrupt the bias on the substrate holder 20 and -environ and thereby the Extinguish the arc.
  • the dashed line in the detector 66 ' shows an alternative position for the detector 66, which is realized here as a voltage detector. Further modifications and embodiments are described in the aforementioned WO 2007/1 15819.
  • the object of the present invention is to improve the etching process.
  • FIG. 3 shows a modification of the embodiment according to FIG. 1 modified according to the invention.
  • the same reference numerals are used in FIG. 3 as in FIG. 1 and these reference symbols indicate the same components of the device or the system.
  • the description of Fig. 1 with respect to these reference numerals applies equally to Fig. 3, unless otherwise stated herein. For the sake of simplicity, only the differing interpretations will now be discussed in more detail.
  • the cathode has been used for example 16 on the right side of the divided device for the etching process and is operated with the same pulse sequence as shown in Fig. 2, but with a bias voltage (bias voltage)
  • bias voltage bias voltage
  • four single cathodes 16A, 16B, 16C, 16D may be used instead of the cathode 16 in the embodiment of Fig. 3, for example, of circular shape and which respectively have a significantly smaller area than the cathode 16, which replace them.
  • cathode or cathodes 16 have a rectangular shape in a top view (which does not necessarily have to be the case), a circular shape is selected for the etching cathodes 16A, 16B, 16C, 16D for the sake of simplicity, although this is not mandatory is required, but the etching cathodes 16A, 16B, 16C, 16D could also have a square or rectangular or other shape.
  • Circular magnetron cathodes are known per se, as are the magnetic systems to be used for this, which lead to the desired magnetic tunnel in front of the respective cathode, which again has the shape of a closed loop.
  • the Be laminating device 10 is provided with a vacuum chamber 14, a plurality of etching cathodes 16 or 16A, 16B, 16C, 16D and a HIPIMS power source 18 arranged therein, wherein the HIPIMS power source 18 can be configured as in the prior art Technique known. Therefore, in addition to at least one coating cathode 16 (shown here on the left side of the device) operable with the HIPIMS power source, the Be laminating apparatus of FIG. 3 has the area of smaller etching cathodes 16A, 16B compared to the coating cathode 16 16C, 16D, which are connectable to the HIPIMS power source 18 in a predetermined or predetermined order by means of the electronic switch 80.
  • the reference numeral 82 indicates a further switch which, like the switch 80, may be designed as an electronic switch, but may also have another design, such as a mechanical one or electromagnetically actuated switch. This also applies in principle to the switch 80.
  • the switch 80 in this embodiment consists of four individual switches 80A, 80B, 80C, 80D, which are opened and closed synchronized in the clock frequency of the pulse train of the HIPIMS power source 18 of FIG. 2, so that, as shown in For example, FIG. 4 shows the first pulse of the order to the cathode 16A, the second pulse of the order to the cathode 16B, the third pulse of the order to the etching cathode 16C, the fourth pulse of the pulse order to the etching cathode 16C and the fifth pulse of FIG Pulse sequence be applied to the etching cathode 16A, etc. again.
  • the individual etching cathodes 16A to 16D each have a substantially smaller area than the coating cathode 16, a substantially higher peak current density can be achieved in the etching cathodes 16A to 16D.
  • the cathodes are preferably switched on one after the other via the electronic switch 80 or 80A to 80D, so that only one cathode is in operation at a certain time. Even if the individual etching cathodes 16A to 16D are clocked at the frequency of the pulse sequence of the HIPIMS power source 18, they can each remain switched on for a much longer switching period so that the power pulses can build up and dissipate.
  • a coating cathode 16 provided, as shown on the left side of FIG. 3, but further coating cathodes 16 may also be provided in the vacuum chamber, successively or simultaneously or in any desired combinations via switches like 82 to the
  • HIPIMS power source 18 can be connected. It can Further HIPIMS power sources for the individual coating methods or groups thereof may be provided.
  • a plurality of etching cathodes smaller in area compared to the coating cathode 16 are provided, this means that the etching cathodes are smaller in area than the individual coating cathodes and at least smaller than the largest of the individual coating cathodes, if for some reason a smaller coating cathode should also be provided, for example because only a smaller percentage of a particular element is to be incorporated into the coating.
  • Coating cathodes are often always provided in the same size, even if only a small percentage of an element is to be delivered from the one coating cathode, as this cathode will then last longer than the other coating cathodes, i. it does not have to be changed so often. In the case of a smaller coating cathode, it is then also frequently operated at reduced power so that the maximum current density in the coating process is at an optimum value for the coating process.
  • the coating cathodes and the etching cathodes can be made of any materials.
  • the coating cathodes could be titanium, zirconium, aluminum, tungsten, chromium, tantalum, or their supports, optionally with minor additions of other elements such as niobium or boron, as well as small additions of rare earths such as Sc, Y, La, or Ce.
  • carbon cathodes for example of graphite.
  • gases such as, inter alia, nitrogen or acetylene can be used here as reactive gases.
  • etching cathodes 16A to 16D may consist of these elements (ie, Cr, V, Ti, Zr, Mo, W, Nb, Ta) or other elements or alloys, if desired.
  • the etching process is usually carried out with an argon pressure ranging from 10 "5 to ICH mbar, preferably at lO 2 mbar.
  • the etching cathodes 16A to 16D can also be used as coating cathodes.
  • all the switches 80A to 80D are simultaneously closed, whereby the etching cathodes 16A to 16D are connected in parallel to the HIPIMS power source 18.
  • the switch 82 may be closed or opened.
  • the HIPIMS power source usually consists of a DC part 84 and a switching part 86, which for the coating cathode from the output power of the DC part 84 cupboardimpul- . as shown in Fig. 2 at the desired or predetermined frequency.
  • the power pulses of the predetermined frequency are applied to the individual etching cathodes 16A, 16B, 16C, 16D in a predetermined order, here the order 16A, 16B, 16C, 16D, whereby the etching cathodes are successively fed with the individual power pulses of the HIPIMS power source.
  • the present teaching is set forth numerically here on the basis of an embodiment with four etching cathodes of the same size and a coating cathode.
  • the coating cathode 16 may be rectangular with a length and width of 100 cm x 17 cm, ie an area of 1700 cm 2 .
  • Such a coating cathode is usually operated in HIPIMS mode with 360 kW and a peak current of 600 A. This results in a power density of about 212 watts per cm 2 and a current density of about 0.35 A / cm 2 at a surface area of about 1700 cm 2.
  • the result for each etching cathode is an area of about 345 cm 2 and this means at the same power supply a surface power or power density of about five times, ie 1, 04 kW / cm 2 and a current density of 1.7 A / cm 2 .
  • the coating device or the HIPIMS power source can also be designed differently.
  • the switching portion 84 may be designed such that the HIPIMS power source 18 is operable in the etching mode to provide at least further pulses in addition to the power pulses having the predetermined frequency, ie, higher frequency power pulses.
  • These power pulses are then supplied to the etching cathodes in sequence, for example, as shown in FIG. FIG. 6 shows this only for the first five pulses which are applied here in the order 16A, 16B, 16C, 16D, 16A to the etching cathodes 10A, 16B, 16C, 16D. Otherwise, for the sake of illustration, the pulse train of FIG.
  • FIG. 3 is shown, but in reality between the two consecutive power pulses of the greater distance three additional power pulses are supplied by the switching part 86 as actually shown in Fig. 7. Also in the example of Fig. 6, therefore, the etching cathodes 16A, 16B, 16C and 16D are successively fed with the individual pulses of the HIPIMS power source. However, this is not mandatory.
  • FIG. 6 is shown, but in reality between the two consecutive power pulses of the greater distance three additional power pulses are supplied by the switching part 86 as actually shown in Fig. 7. Also in the example of Fig. 6, therefore, the etching cathodes 16A, 16B, 16C and 16D are successively fed with the individual pulses of the HIPIMS power source. However, this is not mandatory. FIG.
  • FIG. 7 shows, in another example, how the allocation of the power pulses to the etching cathodes can be made such that here the first four pulses to the etching cathode 16A, the next four power pulses to the etching cathode 16B, the next four power pulses to the etch cathode 16C, the next four power pulses to the etch cathode 16D, etc.
  • the HIPIMS power source is operable to provide at least further pulses between the power pulses having the predetermined frequency, and that the total delivered pulses can be applied in groups to the etching cathodes in turn, whereby the etching cathodes with successively the single
  • Groups of pulses are fed.
  • the number of power pulses in the individual groups is not limited to four, and arbitrary groups and orders of the applied etching cathodes can be selected.
  • Operating the switching part at a higher frequency can increase the power of the DC part 84, but this is limited. It is advantageous that the etching process is shortened due to the higher pulse frequency.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

L'invention concerne un dispositif de revêtement comprenant une chambre à vide, plusieurs cathodes disposées dans celle-ci ainsi qu'une source de puissance HIPIMS. L'invention est caractérisée en ce qu'en plus d'au moins une cathode de revêtement que peut faire fonctionner la source de puissance HIPIMS, plusieurs cathodes de décapage plus petites en surface que la cathode de revêtement peuvent être raccordées à la source de puissance HIPIMS dans un ordre prédéfini ou prédéfinissable.
EP11701627A 2010-01-29 2011-01-27 Dispositif de revêtement comprenant une source de puissance hipims (pulvérisation à magnétron pulsé à haute puissance) Withdrawn EP2529386A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE202010001497U DE202010001497U1 (de) 2010-01-29 2010-01-29 Beschichtungsvorrichtung mit einer HIPIMS-Leistungsquelle
PCT/EP2011/000372 WO2012089286A1 (fr) 2010-01-29 2011-01-27 Dispositif de revêtement comprenant une source de puissance hipims (pulvérisation à magnétron pulsé à haute puissance)

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EP2529386A1 true EP2529386A1 (fr) 2012-12-05

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US (1) US20130276984A1 (fr)
EP (1) EP2529386A1 (fr)
JP (1) JP5647337B2 (fr)
DE (1) DE202010001497U1 (fr)
WO (1) WO2012089286A1 (fr)

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DE102011117177A1 (de) * 2011-10-28 2013-05-02 Oerlikon Trading Ag, Trübbach Verfahren zur Bereitstellung sequenzieller Leistungspulse
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WO2012089286A8 (fr) 2012-10-18
WO2012089286A1 (fr) 2012-07-05
DE202010001497U1 (de) 2010-04-22
JP2013539498A (ja) 2013-10-24
US20130276984A1 (en) 2013-10-24
JP5647337B2 (ja) 2014-12-24

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