EP2482383A2 - Mikrostreifenantenne - Google Patents

Mikrostreifenantenne Download PDF

Info

Publication number
EP2482383A2
EP2482383A2 EP11746883A EP11746883A EP2482383A2 EP 2482383 A2 EP2482383 A2 EP 2482383A2 EP 11746883 A EP11746883 A EP 11746883A EP 11746883 A EP11746883 A EP 11746883A EP 2482383 A2 EP2482383 A2 EP 2482383A2
Authority
EP
European Patent Office
Prior art keywords
dielectric slab
layer
layer dielectric
microstrip antenna
microstrip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP11746883A
Other languages
English (en)
French (fr)
Other versions
EP2482383A4 (de
Inventor
Zujian Feng
Zhenyu Tang
Xing LIAO
Zhili Guo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Huawei Technologies Co Ltd
Original Assignee
Huawei Technologies Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Huawei Technologies Co Ltd filed Critical Huawei Technologies Co Ltd
Publication of EP2482383A2 publication Critical patent/EP2482383A2/de
Publication of EP2482383A4 publication Critical patent/EP2482383A4/de
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04—Resonant antennas
    • H01Q9/0407—Substantially flat resonant element parallel to ground plane, e.g. patch antenna
    • H01Q9/045—Substantially flat resonant element parallel to ground plane, e.g. patch antenna with particular feeding means
    • H01Q9/0457—Substantially flat resonant element parallel to ground plane, e.g. patch antenna with particular feeding means electromagnetically coupled to the feed line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q5/00—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
    • H01Q5/30—Arrangements for providing operation on different wavebands
    • H01Q5/378—Combination of fed elements with parasitic elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04—Resonant antennas
    • H01Q9/0407—Substantially flat resonant element parallel to ground plane, e.g. patch antenna
    • H01Q9/0414—Substantially flat resonant element parallel to ground plane, e.g. patch antenna in a stacked or folded configuration

Definitions

  • the present invention relates to the field of mobile communications technologies, and in particular, to a microstrip antenna.
  • microstrip antennas are widely applied in fields of microwave and millimeter wave.
  • the microwave antenna is thin and easy to be integrated.
  • the technology for expanding antenna bandwidth is widely applied, for example, L-probe feeding, a parasitic patch, U-type groove loading, aperture coupling and other technologies.
  • An aperture-coupled multilayer microstrip antenna is most widely applied, and has the best combination property as well as advantages such as high bandwidth, low cross polarization and small size.
  • FIG 1 A sectional view of the microstrip antenna in the prior art is shown in FIG 1 , which is usually formed by a dielectric slab 1a, a dielectric slab 2a and a dielectric slab 3a that are disposed in parallel.
  • a microstrip patch 11a is disposed at a central position of an upper surface of the dielectric slab 1a
  • a microstrip patch 21a is disposed at a central position of an upper surface of the dielectric slab 2a
  • a ground layer 31a is disposed on an upper surface of the dielectric slab 3a.
  • a coupling aperture 32a is opened at a central position of the ground layer 31a
  • a central conductor 33a is disposed on a lower surface of the dielectric slab 3a.
  • the microstrip antenna with such a structure, feeding is performed by a microstrip line formed by the ground layer 31 a, the dielectric slab 3a and the central conductor 33a.
  • Backward radiation and spurious radiation of the microstrip antenna occur in the coupling aperture 32a, therefore affecting a ratio between forward radiation energy and backward radiation energy of the antenna, namely, affecting the F/B of the antenna.
  • a reflection board 4a of the aluminum honeycomb material is usually added at a position with 1/4 dielectric wavelength away from the antenna dielectric slab 3a, to offset the backward radiation.
  • Foam 5a is filled between the dielectric slab 3a and the reflection board 4a.
  • a size of the microstrip antenna in the prior art is bulky, which makes transmission of the antenna and integration of receiving circuits difficult.
  • Embodiments of the present invention provide a microstrip antenna, to solve a problem in the prior art that the bulky size of the microstrip antenna makes transmission of the antenna and integration of receiving circuits difficult.
  • An embodiment of the present invention provides a microstrip antenna, including four layers of dielectric slabs disposed in parallel, where a first microstrip patch is disposed at a central position of an upper surface of a first layer dielectric slab; a second microstrip patch is disposed at a central position of an upper surface of a second layer dielectric slab; a first ground layer is disposed on an upper surface of a third layer dielectric slab, a coupling aperture is opened at a central position of the first ground layer, and a central conductor is disposed at a central position of a lower surface of the third layer dielectric slab; and a second ground layer is disposed at a lower surface of a fourth layer dielectric slab; and the third layer dielectric slab and the fourth layer dielectric slab are of asymmetric dielectrics, so that an electric field above the central conductor is greater than an electric field below.
  • the third layer dielectric slab and the fourth layer dielectric slab are of asymmetric dielectrics, so that in a strip line, an upper-part electric field strength is far greater than a lower-part electric field strength, which improves energy coupling efficiency, ensures bandwidth of the antenna, reduces the backward radiation of the microstrip antenna, thereby improving the F/B of the microstrip antenna.
  • the overall size of the microstrip antenna is greatly reduced, which is beneficial to the transmission of the antenna and the integration of the receiving circuits.
  • FIG. 3 is a sectional view of a microstrip antenna provided in an embodiment of the present invention.
  • the microstrip antenna includes: four layers of dielectric slabs that are disposed in parallel; where a first microstrip patch 11 is disposed at a central position of an upper surface of a first layer dielectric slab 1; a second microstrip patch 21 is disposed at a central position of an upper surface of a second layer dielectric slab 2; a first ground layer 31 is disposed on an upper surface of a third layer dielectric slab 3, a coupling aperture 32 is opened at a central position of the first ground layer 31, a central conductor 33 is disposed at a central position of a lower surface of the third layer dielectric slab 3; and a second ground layer 41 is disposed on a lower surface of a fourth layer dielectric slab 4; and the third layer dielectric slab 3 and the fourth layer dielectric slab 4 are of asymmetric dielectrics, so that an electric field above the central conductor 33 is greater than an electric field below.
  • the third layer dielectric slab 3 and the fourth layer dielectric slab 4 are of asymmetric dielectrics
  • the first ground layer 31, the third layer dielectric slab 3, the central conductor 33, the fourth layer dielectric slab 4 and the second ground layer 41 together form an asymmetric dielectric strip line.
  • an entire microstrip antenna is formed by four layers of dielectric slabs, namely, the first layer dielectric slab 1, the second layer dielectric slab 2, the third layer dielectric slab 3 and the fourth layer dielectric slab 4.
  • a double-sided copper-clad dielectric slab may be adopted. Undesired copper foil is discarded and a desired pattern is reserved after photoetching of the copper foil, and the entire microstrip antenna is obtained through a laminating technology.
  • the first microstrip patch 11 is reserved at the central position of the upper surface of the first layer dielectric slab 1 through photoetching, and a copper foil on a lower surface of the first layer dielectric slab 1 is completely etched off.
  • the second microstrip patch 21 is reserved at the central position of the upper surface of the second layer dielectric slab 2, and a copper foil on a lower surface of the second layer dielectric slab 2 is also completely etched off.
  • a copper foil on the upper surface of the third layer dielectric slab 3 is reserved and served as the first ground layer 31 of the asymmetric dielectric strip line.
  • the coupling aperture 32 is etched on the first ground layer 31.
  • the central conductor 33 is reserved at the central position of the lower surface of the third layer dielectric slab 3.
  • the first ground layer 31, the third layer dielectric slab 3, the central conductor 33, the fourth layer dielectric slab 4 and the second ground layer 41 together forming the asymmetric dielectric strip line refers to that: the third layer dielectric slab 3 above the central conductor 33 and the fourth layer dielectric slab 4 below are different and asymmetric.
  • the difference and asymmetry may be that: the third layer dielectric slab 3 and the fourth layer dielectric slab 4 are of different sizes, or of different dielectric constants, or of different sizes and dielectric constants.
  • the dielectric constant of the third layer dielectric slab 3 is greater than that of the fourth layer dielectric slab 4, and the size of the third layer dielectric slab 3 is less than that of the fourth layer dielectric slab 4.
  • the third layer dielectric slab 3 and the fourth layer dielectric slab 4 in the asymmetric dielectric strip line are of different sizes, or of different material, which results in different dielectric constants, or the third layer dielectric slab 3 and the fourth layer dielectric slab 4 are of different sizes and material.
  • an electric field strength above the central conductor 33 is far greater than an electric field strength below.
  • Energy is mainly concentrated in a region of the third layer dielectric slab 3 between the central conductor 33 and the first ground layer 31. In this manner, energy exchange near the coupling aperture 32 has small influence on the electric field strength of the fourth layer dielectric slab 4, and overall energy can be effectively transmitted to the first microstrip patch 11 and the second microstrip patch 21.
  • the asymmetric strip line can better ensure effective transmission of the energy, and reducing backward radiation and spurious radiation of the energy.
  • the second ground layer 41 has a function of shielding energy, and is capable of preventing backward radiation of the energy, so as to ensure that most energy is radiated from the front of the microstrip antenna.
  • the third layer dielectric slab and the fourth layer dielectric slab are of asymmetric dielectrics, so that in the strip line, an upper-part electric field strength is far greater than an lower-part electric field strength, so as to improve energy coupling efficiency, ensure bandwidth of the antenna, and reduce the backward radiation of the microstrip antenna, thereby improving the F/B of the microstrip antenna.
  • the overall size of the microstrip antenna is greatly reduced, which is beneficial to the transmission of the antenna and the integration of the receiving circuits.
  • FIG 4 is a sectional view of a microstrip antenna provided in another embodiment of the present invention.
  • the microstrip antenna includes: four layers of dielectric slabs that are disposed in parallel; where a first microstrip patch 11 is disposed at a central position of an upper surface of a first layer dielectric slab 1; a second microstrip patch 21 is disposed at a central position of an upper surface of a second layer dielectric slab 2; a first ground layer 31 is disposed on an upper surface of a third layer dielectric slab 3, a coupling aperture 32 is opened at a central position of the first ground layer 31, a central conductor 33 is disposed at a central position of a lower surface of the third layer dielectric slab 3; and a second ground layer 41 is disposed on a lower surface of a fourth layer dielectric slab 4; and the third layer dielectric slab 3 and the fourth layer dielectric slab 4 are of asymmetric dielectrics, so that an electric field above the central conductor 33 is greater than an electric field below.
  • the first ground layer 31, the third layer dielectric slab 3, the central conductor 33, the fourth layer dielectric slab 4 and the second ground layer 41 form an asymmetric dielectric strip line.
  • the asymmetric dielectric strip line mainly refers to that: the third layer dielectric slab 3 above the central conductor 33 and the fourth layer dielectric slab 4 below are of asymmetric dielectrics, which specifically may be that: the third layer dielectric slab 3 and the fourth layer dielectric slab 4 are of different sizes, or of different dielectric constants, or of different sizes and dielectric constants.
  • the dielectric constant of the third layer dielectric slab 3 is greater than that of the fourth layer dielectric slab 4, and the size of the third layer dielectric slab 3 is less than that of the fourth layer dielectric slab 4.
  • the first microstrip patch 11 and the second microstrip patch 21 may overlap with each other, to ensure that energy transmitted towards a position above the microstrip antenna is the greatest.
  • the first microstrip patch 11 and the second microstrip patch 21 may be both set to squares.
  • a length of a side of the first microstrip patch 11 may be slightly greater than 1/2 dielectric wavelength
  • a length of a side of the second microstrip patch 21 may be slightly less than 1/2 dielectric wavelength, which results from two resonances of the first microstrip patch 11 and the second microstrip patch 21.
  • the length of the side of the first microstrip patch 11 is slightly greater than 1/2 dielectric wavelength, and the length of the side of the second microstrip patch 21 is slightly less than 1/2 dielectric wavelength, so as to ensure that energy between two resonances can be transmitted well, and facilitate the expansion of the bandwidth of the microstrip antenna.
  • the first ground layer 31 is shared by the second microstrip patch 21 and the asymmetric dielectric strip line.
  • the coupling aperture 32 is opened at the first ground layer 31.
  • the coupling aperture 21 is an elongated gap. Seen from the perspective diagram shown in FIG 5 , the coupling aperture 32 is located right below the second microstrip patch 21, and is perpendicular to the central conductor 33.
  • the coupling aperture 32 and the central conductor 33 are etched at the opposite side of the center of the third layer dielectric slab 3, thereby ensuring alignment precision between the coupling aperture 32 and the central conductor 33.
  • a standing wave voltage on the central conductor 33 with an open end demonstrates a cosine distribution, and at a position with 1/4 dielectric wavelength away from an open end, a voltage amplitude is maximum.
  • a length of the coupling aperture 32 may be set to be less than 1/2 dielectric wavelength, so that the coupling aperture 32 is in a non-resonant state.
  • the coupling aperture 32 is an elongated gap, and the gap in a resonant state may also radiate electromagnetic waves.
  • the coupling aperture 32 is required to be in a non-resonant state.
  • the central conductor 33 is located right below the coupling aperture 32.
  • a length of a part that is of the central conductor 33 and exceeds an edge of the coupling aperture 32 is less than 1/4 dielectric wavelength, and a length of a part that does not exceed the edge of the coupling aperture 32 is equal to 1/4 dielectric wavelength.
  • a width of the part that is of the central conductor 33 and exceeds the edge of the coupling aperture 32 and a width of the part that does not exceed the edge of the coupling aperture 32 are both greater than widths of other parts of the central conductor 33. The reason lies in that: the energy coupling and antenna radiation exist, so that a transmission line impedance near the coupling aperture 32 changes.
  • Impedance matching needs to be performed on the microstrip antenna, and capacitive reactance is introduced at an open end section of the central conductor 33 to offset inductive reactance generated by the coupling aperture 32.
  • a condition for the open end section being capacitive is that, under a condition that the length is less than 1/4 dielectric wavelength, capacitivity increases as a width increases.
  • On the central conductor 33 a section of conductor in front of the coupling aperture 32 functions to transform the antenna impedance to high impedance for implementing the matching.
  • a length of an impedance transforming section is approximately 1/4 dielectric wavelength, a width is greater than that of the central conductor 33, and smaller antenna impedance is transformed to be consistent with impedance of the asymmetric dielectric strip line.
  • a non-resonant cavity may be set in the third layer dielectric slab 3 and the fourth layer dielectric slab 4 around the coupling aperture 32, where the non-resonant cavity connects the first ground layer 31 and the second ground layer 41.
  • the non-resonant cavity may be formed by at least four metal columns 5, and the metal columns 5 connect the first ground layer 31 and the second ground layer 41.
  • the non-resonant cavity may be formed by four metal columns 5, and a distance between any two adjacent metal columns 5 in the non-resonant cavity is less than 1/2 dielectric wavelength, to prevent energy mismatch caused by extra resonance generated in a region near the central conductor 33.
  • Transverse electric and magnetic field (Transverse Electric and Magnetic Field; TEM) waves or quasi-TEM waves are transmitted in the asymmetric dielectric strip line, which is determined by a metal boundary condition and a dielectric boundary condition of a transmission line (which is formed by the central conductor 33, the first ground layer 31 and the second ground layer 41). If dielectric constants of the third layer dielectric slab 3 and the fourth layer dielectric slab 4 are different, a vertical electric field component or a magnetic field component is generated at a boundary of the two dielectrics. However, the vertical component is weak, and therefore, it is the quasi-TEM waves that are transmitted in the asymmetric dielectric strip line.
  • the third layer dielectric slab 3 and the fourth layer dielectric slab 4 are merely of different sizes, and the dielectric constants of the third layer dielectric slab 3 and the fourth layer dielectric slab 4 are the same, it is the TEM waves that are transmitted in the asymmetric dielectric strip line.
  • the first ground layer 31 and the second ground layer 41 in the asymmetric dielectric strip line form a loop of a surface current together with the central conductor 33.
  • a direction of the surface current on the first ground layer 31 and the second ground layer 41 is opposite to a direction of the surface current on the central conductor 33, while the total magnitude of the surface current on the first ground layer 31 and the second ground layer 41 is equal to that of the surface current on the central conductor 33.
  • the sizes and dielectric constants of the third layer dielectric slab 3 and the fourth layer dielectric slab 4 in the asymmetric dielectric strip line are different, the electric field strengths in the two layers of dielectric slabs are different. As a result, the magnitude of the surface current on the first ground layer 31 is different from that on the second ground layer 41.
  • the dielectric constant of the third layer dielectric slab 3 is greater than that of the fourth layer dielectric slab 4, or the size of the third layer dielectric slab 3 is less than that of the fourth layer dielectric slab 4.
  • the dielectric constant of the third layer dielectric slab 3 is greater than that of the fourth layer dielectric slab 4, and the size of the third layer dielectric slab 3 is less than that of the fourth layer dielectric slab 4. Therefore, the surface current of the first ground layer 31 is far greater than that of the second ground layer 41.
  • the surface current on the first ground layer 31 is divided before the coupling aperture 32, and then combined after the coupling aperture 32.
  • Such direction change of the surface current forms a non-TEM field near the coupling aperture 32.
  • the coupling aperture 32 is located right above the central conductor 33 and may obtain the maximum non-TEM field strength.
  • an induction current is generated on the second ground layer 41, corresponding to a mirror non-TEM field.
  • a direction of the mirror non-TEM field is opposite to that of an original non-TEM field, functioning to offset the original non-TEM field.
  • the length of the coupling aperture 32 may be reduced as much as possible, so that the length is less than a length in the resonant state, thereby decreasing the strength of the induction current.
  • the change of a dielectric filling manner in the third layer dielectric slab 3 and the fourth layer dielectric slab 4 in the asymmetric strip line may also function to decrease the induction current.
  • a magnetic field part of the non-TEM field formed near the coupling aperture 32 is right consistent with a transverse magnetic field formed in the second layer dielectric slab 2 during radiation of the second microstrip patch 21. Therefore, the coupling aperture 32 is capable of exciting the radiation of the second microstrip patch 21. In the same way, the second microstrip patch 21 needs to be located right above the coupling aperture 32 to excite the most effective antenna radiation.
  • the first microstrip patch 11 is also in a resonant state by coupling energy of the second microstrip patch 21, to radiate energy externally. As resonant frequencies for exciting the second microstrip patch 21 and the first microstrip patch 11 are different but close to each other, the bandwidth of the microstrip antenna is improved.
  • the non-resonant cavity formed by the metal columns 5 may destruct the boundary condition of transmission of the parallel wire TEM wave and restrain the generation of the parallel wire TEM wave, thereby facilitating the reduction of interferences of antenna units in an antenna array, and facilitating the reduction of an interference of an active integrated antenna on active devices backward.
  • Relative bandwidth of the antenna is an important index for measuring the antenna performance.
  • the relative bandwidth of the microstrip antenna is a ratio between a frequency range of the electromagnetic wave of the microstrip antenna radiation and a central frequency of the electromagnetic wave of the microstrip antenna radiation.
  • return loss of the antenna needs to be further considered.
  • the return loss refers to a ratio between electromagnetic waves radiated by the microstrip antenna and electromagnetic waves reflected back to the antenna.
  • the return loss may also be used to measure the electromagnetic wave radiation efficiency of the antenna.
  • FIG. 6 is a partial schematic diagram of return loss obtained through HFSS emulation of a microstrip antenna provided in the present invention. In FIG.
  • a horizontal coordinate indicates the frequency of the electromagnetic wave radiated by the microstrip antenna
  • a vertical coordinate indicates the return loss of the electromagnetic wave radiated by the microstrip antenna.
  • the relative bandwidth of the microstrip antenna may be calculated according to the frequency range and central frequency of the electromagnetic wave of the microstrip antenna provided in the present invention.
  • the vertical coordinate of corresponding return loss may be found. It can be concluded that, the return loss of the microstrip antenna provided in the present invention is less than -20 dB within 10% of the relative bandwidth, and the return loss is less than -18 dB within 12% of the relative bandwidth. Therefore, the return loss of the microstrip antenna provided in the present invention meets most application scenarios.
  • FIG 7 is a far-field directional diagram obtained through HFSS emulation of a microstrip antenna provided in the present invention.
  • Theta and phi are both spherical coordinates.
  • Two orthogonal sections of the electromagnetic wave energy radiated by the microstrip antenna are shown in FIG. 7 , where two polarization components and four curves exist in the same section.
  • a coordinate scale it can be obtained from a difference between a maximum value of co-polarization with greater energy and a maximum value of cross polarization with smaller energy, or from a ratio between front (0 degree) and back (180 degrees) of the same co-polarization curve that, the cross polarization of the microstrip antenna provided in the present invention is about -27.2 dB, and the F/B of the microstrip antenna is about 16.5 dB.
  • the magnitude of the second ground layer influences the F/B of the antenna to some extent, and generally, expanding the second ground layer can reduce the backward radiation. Therefore, a single microstrip antenna may be used as an array unit.
  • the second ground layer is expanded by increasing the number of array units, so that energy hardly diffracts to the back of the microstrip antenna, namely, reducing the backward radiation, thereby improving the F/B of the microstrip antenna.
  • a 4*4 microstrip antenna array is adopted, that is, 4 rows by 4 columns of microstrip antennas are connected.
  • the F/B of the microstrip antenna array may be improved to 30 dB, and the size of the microstrip antenna array is only 54mm*54mm. If the number of the array units of the microstrip antenna is further increased, it can be implemented that the F/B of the microstrip antenna may be improved to higher than 50 dB.
  • FIG 8 is a schematic diagram of an in-band gain obtained through HFSS emulation of a microstrip antenna provided in the present invention.
  • a horizontal coordinate indicates the frequency of the electromagnetic wave radiated by the microstrip antenna
  • a vertical coordinate indicates the gain of the electromagnetic wave radiated by the microstrip antenna, where the gain is another important index of the antenna performance, embodying the energy bunching capability of the antenna that serves as an energy transceiver. It can be calculated from FIG.
  • the average gain value of the electromagnetic wave radiated by the microstrip antenna provided in the embodiment of the present invention is about 7.33 dB, and in each frequency point within the frequency band range of the microstrip antenna, a fluctuation amplitude around the average value, namely, an in-band flatness, is about 0.1 dB. It can be seen that, on each frequency point within the frequency band range of the microstrip antenna provided in the present invention, the gains of radiated electromagnetic waves are close.

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Waveguide Aerials (AREA)
EP11746883A 2011-04-19 2011-04-19 Mikrostreifenantenne Withdrawn EP2482383A4 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2011/073006 WO2011103841A2 (zh) 2011-04-19 2011-04-19 一种微带天线

Publications (2)

Publication Number Publication Date
EP2482383A2 true EP2482383A2 (de) 2012-08-01
EP2482383A4 EP2482383A4 (de) 2012-12-19

Family

ID=44507284

Family Applications (1)

Application Number Title Priority Date Filing Date
EP11746883A Withdrawn EP2482383A4 (de) 2011-04-19 2011-04-19 Mikrostreifenantenne

Country Status (3)

Country Link
EP (1) EP2482383A4 (de)
CN (1) CN102959801A (de)
WO (1) WO2011103841A2 (de)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017155379A1 (fr) * 2016-03-07 2017-09-14 Université Mohammed V De Rabat Originale antenne micro-ruban multicouche pour les télévisions par satellites dans la bande x
JP2019532563A (ja) * 2016-09-01 2019-11-07 ウェハー エルエルシーＷａｆｅｒ Ｌｌｃ 多層ソフトウェアデファインドアンテナ及びその製造方法
EP3588677A1 (de) * 2018-06-25 2020-01-01 Nokia Solutions and Networks Oy Dielektrische resonatorantenne

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019116941A1 (ja) * 2017-12-14 2019-06-20 株式会社村田製作所 アンテナ装置、アンテナモジュール、及び無線装置
CN112350055B (zh) * 2019-08-09 2022-07-22 上海航天测控通信研究所 一种x波段赋形波束天线

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5451966A (en) * 1994-09-23 1995-09-19 The Antenna Company Ultra-high frequency, slot coupled, low-cost antenna system
US5801660A (en) * 1995-02-14 1998-09-01 Mitsubishi Denki Kabushiki Kaisha Antenna apparatuus using a short patch antenna
EP0948084A2 (de) * 1998-04-03 1999-10-06 Robert Bosch Gmbh Dual polarisiertes Antennenelement
DE69323612T2 (de) * 1992-12-29 1999-10-21 France Telecom Streifenleitungsantenne mit zwei Polarisationen und entsprechende Vorrichtung zum Senden/Empfangen
FR2828014A1 (fr) * 2001-07-27 2003-01-31 D Phy Espace Dev De Produits H Antenne

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4847625A (en) * 1988-02-16 1989-07-11 Ford Aerospace Corporation Wideband, aperture-coupled microstrip antenna
FR2801139B1 (fr) * 1999-11-12 2001-12-21 France Telecom Antenne imprimee bi-bande
US7999745B2 (en) * 2007-08-15 2011-08-16 Powerwave Technologies, Inc. Dual polarization antenna element with dielectric bandwidth compensation and improved cross-coupling
CN101141023B (zh) * 2007-09-07 2011-12-07 中国电子科技集团公司第五十五研究所 微机电层叠式毫米波天线
CN201536151U (zh) * 2009-08-14 2010-07-28 南京理工大学 X波段双极化低互耦微带天线

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69323612T2 (de) * 1992-12-29 1999-10-21 France Telecom Streifenleitungsantenne mit zwei Polarisationen und entsprechende Vorrichtung zum Senden/Empfangen
US5451966A (en) * 1994-09-23 1995-09-19 The Antenna Company Ultra-high frequency, slot coupled, low-cost antenna system
US5801660A (en) * 1995-02-14 1998-09-01 Mitsubishi Denki Kabushiki Kaisha Antenna apparatuus using a short patch antenna
EP0948084A2 (de) * 1998-04-03 1999-10-06 Robert Bosch Gmbh Dual polarisiertes Antennenelement
FR2828014A1 (fr) * 2001-07-27 2003-01-31 D Phy Espace Dev De Produits H Antenne

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
See also references of WO2011103841A2 *
SUHONG KWON ET AL: "Compact size dual-polarized diversity microstrip antenna for IMT-2000 base-station", IEEE ANTENNAS AND PROPAGATION SOCIETY INTERNATIONAL SYMPOSIUM. 2001 DIGEST. APS. BOSTON, MA, JULY 8 - 13, 2001; [IEEE ANTENNAS AND PROPAGATION SOCIETY INTERNATIONAL SYMPOSIUM], NEW YORK, NY : IEEE, US, vol. 2, 8 July 2001 (2001-07-08), pages 38-41, XP010564026, DOI: 10.1109/APS.2001.959616 ISBN: 978-0-7803-7070-8 *
ZHAO F ET AL: "Design and manufacture of the wide-band aperture-coupled stacked microstrip antenna", PROGRESS IN ELECTROMAGNETICS RESEARCH C EMW PUBLISHING USA, vol. 7, 2009, pages 37-50, XP002686517, ISSN: 1937-8718 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017155379A1 (fr) * 2016-03-07 2017-09-14 Université Mohammed V De Rabat Originale antenne micro-ruban multicouche pour les télévisions par satellites dans la bande x
JP2019532563A (ja) * 2016-09-01 2019-11-07 ウェハー エルエルシーＷａｆｅｒ Ｌｌｃ 多層ソフトウェアデファインドアンテナ及びその製造方法
EP3588677A1 (de) * 2018-06-25 2020-01-01 Nokia Solutions and Networks Oy Dielektrische resonatorantenne

Also Published As

Publication number Publication date
EP2482383A4 (de) 2012-12-19
WO2011103841A2 (zh) 2011-09-01
CN102959801A (zh) 2013-03-06
WO2011103841A3 (zh) 2012-04-05

Similar Documents

Publication Publication Date Title
CN106856261B (zh) 天线阵列
EP3726649A1 (de) Antennenmodul und elektronische vorrichtung
US7847737B2 (en) Antenna apparatus
US7423591B2 (en) Antenna system
AU2011354510B2 (en) Antenna having external and internal structures
WO2017091993A1 (zh) 一种多频通信天线以及基站
JPH07307612A (ja) 平面アンテナ
US7642981B2 (en) Wide-band slot antenna apparatus with constant beam width
EP2482383A2 (de) Mikrostreifenantenne
CN112803166A (zh) 一种x波段宽频带圆极化金属加载介质谐振器天线
US20120044117A1 (en) Planar antenna apparatus
CN110336124B (zh) 基于双模融合的带宽增强紧凑型微带天线、无线通信系统
EP1324423A1 (de) Kostengünstig gedruckte rundstrahlende Monopolantenne für ultrabreitbandige mobile Anwendungen
CN116613538A (zh) 一种低剖面小型化宽带超表面天线
CN213043048U (zh) 基于复杂匹配网络的宽带全向天线
Moeikham et al. A compact printed slot antenna with high out-of-band rejection for WLAN/WiMAX applications
CN113497357B (zh) 一种宽带双极化滤波天线
CN110797652B (zh) 一种cpw结构的周期性漏波天线及制备方法
EP3382798A1 (de) Schlitzantenne und endgerät
EP2800202B1 (de) Kommunikationsvorrichtung mit einer Antenne mit Gegengewicht
Esfandiarpour et al. Wideband planar horn antenna using substrate integrated waveguide technique
CN112531355A (zh) 一种±45°双极化毫米波阵列天线
KR100532587B1 (ko) 상부 유전체층의 금속스트립을 이용한 고이득 선형편파마이크로스트립 패치 배열 안테나
JP2021132296A (ja) アンテナ装置
CN114725662B (zh) 一种基于磁振子和电振子的微带馈电平面圆极化天线

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20120423

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

RIC1 Information provided on ipc code assigned before grant

Ipc: H01Q 9/04 20060101AFI20121107BHEP

Ipc: H01Q 5/00 20060101ALI20121107BHEP

A4 Supplementary search report drawn up and despatched

Effective date: 20121119

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION HAS BEEN WITHDRAWN

18W Application withdrawn

Effective date: 20130220