EP2478557A1

EP2478557A1 - Optoelectronic module

Info

Publication number: EP2478557A1
Application number: EP10752334A
Authority: EP
Inventors: Walter Wegleiter; Axel Kaltenbacher; Bernd Barchmann; Karl Weidner; Matthias Rebhan
Original assignee: Osram Opto Semiconductors GmbH
Current assignee: Ams Osram International GmbH
Priority date: 2009-09-18
Filing date: 2010-09-06
Publication date: 2012-07-25
Also published as: US20120228666A1; KR20120080608A; CN102576707A; TW201117439A; JP2013505561A; WO2011032853A1; DE102009042205A1

Abstract

The invention relates to an optoelectronic module (100) having at least one carrier (1) with at least one contact location (1A); a semiconductor chip (2) emitting radiation, wherein the semiconductor chip (2) emitting radiation comprises a first contact surface (2A) and a second contact surface (2B); an electrically insulating layer (4) comprising a first (4A) and a second recess (4B); at least one electrically conductive conductor structure (8), wherein the first contact surface (2A) is disposed on the side of the semiconductor chip (2) emitting radiation facing away from the carrier (1), the electrically insulating layer (4) is applied at least in places to the carrier (1) and the semiconductor chip (2) comprises the first recess (4A) in the area of the first contact surface (2A) and the second recess (4B) in the area of the contact location (1A), the electrically conductive conductor structure (8) is disposed on the electrically insulating layer (4) and the first contact surface (2A) electrically contacts the contact location (1A) of the carrier (1), and the electrically insulating layer (4) is formed predominately of a ceramic material.

Description

description

Optoelectronic module An optoelectronic module is specified.

An object to be solved is to provide an optoelectronic module which is particularly resistant to aging and has a long service life.

This patent application claims the priority of German Patent Application 10 2009 042 205.6, the disclosure of which is hereby incorporated by reference. According to at least one embodiment of the optoelectronic module, this comprises a carrier with at least one

Contact point. The carrier may be a

PCB or a carrier frame (leadframe) act. It is also conceivable that the carrier is flexible and

for example, is designed as a film. The carrier may be provided with an electrically conductive material, for example a metal, or an electrically insulating material,

For example, a duro- or thermoplastic or a ceramic material may be formed. If the carrier is formed with an electrically insulating material, it is conceivable that the carrier has connection points and conductor tracks on a mounting surface and / or a bottom surface opposite the mounting surface. The at least one contact point is formed with an electrically conductive material, for example a metal.

According to at least one embodiment, this includes

Optoelectronic module a radiation-emitting Semiconductor chip, wherein the radiation-emitting semiconductor chip has a first contact surface and a second

Contact surface has. The two contact surfaces serve for contacting the radiation-emitting semiconductor chip. By way of example, the radiation-emitting semiconductor chip with the second contact surface is fastened on a connection point of the carrier and electrically contacted. In which

radiation-emitting semiconductor chip may be

for example, act to a LED chip. The luminescence diode chip can be a luminescent or laser diode chip whose radiation-generating active zone emits radiation in the range from ultraviolet to infrared light. The first and second contact surfaces of the radiation-emitting semiconductor chip are preferably formed with an electrically conductive material, for example a metal.

According to at least one embodiment, this includes

Optoelectronic module an electrically insulating layer having a first and a second recess.

For example, the recesses by means of a

Material removal generated. The two recesses are then bounded laterally, for example, by the electrically insulating layer and each have two opposing ones

Openings on. Preferably, the two recesses are then freely accessible from the outside.

In accordance with at least one embodiment of the optoelectronic module, the first contact surface is arranged on the side of the radiation-emitting semiconductor chip which faces away from the carrier. For example, the first contact surface is applied to the surface on the side facing away from the carrier side of the radiation-emitting semiconductor chip. In accordance with at least one embodiment, the optoelectronic module comprises at least one electrically conductive conductive structure. The electrically conductive conductive structure can be, for example, electrical conductor tracks, which are preferably provided with a metal or a metal

Metal alloy are formed. It is also conceivable that the electrically conductive conductive structure is formed with an electrically conductive adhesive or a metal paste.

In accordance with at least one embodiment of the optoelectronic module, the electrically insulating layer is at least in places on the carrier and the semiconductor chip

applied. Preferably, the electrically insulating layer is integrally formed in a form-fitting manner at these locations, so that neither a gap nor an interruption forms between the electrically insulating layer and the areas covered by the electrically insulated layer. Furthermore, the electrically insulating layer has the first one

Recess in the region of the first contact surface and the second recess in the region of the contact point. Recess and contact surface / contact point are thus arranged at least in places congruent to each other, so that the

Radiation-emitting semiconductor chip from the outside through the introduced in the electrically insulating layer

Recesses can be contacted through.

In accordance with at least one embodiment of the optoelectronic module, the electrically conductive conductive structure is arranged on the electrically insulating layer and makes electrical contact with the first contact area with the contact point of the carrier. Preferably, the electrically conductive Conductor formed on the electrically insulating layer form fit. In other words, there is preferably no gap or interruption between the electrically insulating layer and the electrically conductive conductive structure. For this purpose, the electrically conductive conductive structure is on the electrically insulating layer

For example, by screen printing, a jet or

Dispensing method or a spraying method applied. For example, the recesses are filled at least in places with the guide structure. Preferably, the electrically conductive conductive structure penetrates the recesses, so that the electrically conductive conductive structure is completely contacted with the semiconductor chip. The recess is filled, for example, with the material of the electrically conductive guide structure.

In accordance with at least one embodiment of the optoelectronic module, the electrically insulating layer is predominantly formed with a ceramic material. "Predominantly" means that the electrically insulating layer contains at least 50% by weight, preferably at least 75% by weight, of ceramic material. It is also conceivable in this context that the electrically insulating layer is made entirely of a ceramic

Material exists. Furthermore, it is possible that the electrically insulating layer consists of a glass ceramic, which consists of a molten glass by controlled crystallization

is made.

According to at least one embodiment, this includes

Optoelectronic module a carrier with at least one contact point and a radiation-emitting

Semiconductor chip, wherein the radiation-emitting

Semiconductor chip, a first contact surface and a second Contact surface has. Furthermore, the optoelectronic module comprises an electrically insulating layer, which has a first and a second recess, and at least one

electrically conductive conductive structure. The first contact surface is on the side facing away from the carrier of the

Radiation-emitting semiconductor chips arranged. Furthermore, the electrically insulating layer is applied at least in places to the carrier and the semiconductor chip and has the first recess in the region of the first contact surface and the second recess in the region of the second contact point. The electrically conductive conductive structure is arranged on the electrically insulating layer and makes electrical contact with the first contact area with the contact point of the carrier. Furthermore, the electrically insulating layer is formed predominantly with a ceramic material.

The optoelectronic module described here is based inter alia on the finding that an electrically insulating layer formed with organic materials, which is used, for example, in optoelectronic modules with planar contacting, has little aging stability. This means that external influences such as

Irradiation, moisture or temperature changes damage the material of the electrically insulating layer. This leads already after short operating time of

Optoelectronic module, for example, a brittle electrically insulating layer. This means that such an optoelectronic module can already exhibit aging-related damage after a short period of operation.

To provide an optoelectronic module which

particularly stable to aging, the optoelectronic module described here makes use, inter alia, of the idea to form the electrically insulating layer predominantly with a ceramic material. Ceramic materials are more resistant to aging, especially in the case of external radiation and heat, as a result of which such an electrically insulating layer has hardly any material damage, even under heavy external stress, even after a prolonged period of operation.

Advantageously, such an optoelectronic module is created, which has a greatly increased lifetime.

According to at least one embodiment, this includes

Optoelectronic module at least two radiation-emitting semiconductor chips, wherein the electrically insulating layer in places between the radiation-emitting

Semiconductor chips is arranged. For example, intermediate spaces are formed between the semiconductor chips. In other words, the semiconductor chips are then arranged at a distance from one another. For example, the intermediate spaces are filled with the material of the electrically insulating layer.

Preferably, the electrically insulating layer then touches and covers side surfaces of the semiconductor chips

positive fit.

According to at least one embodiment of the optoelectronic module, the electrically insulating layer is up to the

Recesses positively applied to the exposed outer surfaces of the optoelectronic module. That means that between the exposed outside surfaces of the

Optoelectronic module and the electrically insulating layer forms neither a gap nor an interruption. In this case, the electrically insulating layer assumes the function of an encapsulation layer, for example of the radiation-emitting semiconductor chips. That may mean the semiconductor chips are completely encapsulated by the electrically insulating layer up to areas of electrical contacting. As a result, the radiation-emitting semiconductor chips are advantageously protected against mechanical influences, such as impacts.

In accordance with at least one embodiment of the optoelectronic module, the electrically insulating layer is

permeable to radiation and covers one

Radiation exit surface of the semiconductor chip in places. "Radiation permeable" means that the electric

insulating layer preferably only partially absorbs the radiation emitted by the active layer. The electromagnetic radiation emitted by the radiation-emitting semiconductor chips can thus at least partially pass through the electrically insulating layer from the

Optoelectronic module to be decoupled.

In accordance with at least one embodiment of the optoelectronic module, the electrically insulating layer consists of a ceramic phosphor. Is the electrically insulating

Layer applied in places on the radiation exit surface of the semiconductor chip, so can the electric

insulating layer of the semiconductor chip primarily emitted electromagnetic radiation partially absorb and at least partially the primary emitted radiation in

Convert radiation of different wavelengths and again

re-emit. The electrically insulating layer thus has the function of a light converter. For example, the electrically insulating layer then consists of YAG: Ce.

In accordance with at least one embodiment of the optoelectronic module, the first recess extends electrically insulating layer throughout between the

Radiation exit surface of the semiconductor chip and the carrier along side surfaces of the semiconductor chip and is

bounded laterally by the contact surface and the carrier. This may mean that the radiation exit surface as well as one or more of the side surfaces of the semiconductor chip are at least partially "exposed".

In accordance with at least one embodiment of the optoelectronic module, the first recess in the electrically insulating layer extends continuously between adjacent ones

Semiconductor chips and is bounded by the contact surfaces laterally. "Adjacent" in this context means that the semiconductor chips are arranged in pairs, for example, and each pair between them forms the gap. Of the

Space is not covered by the electrically conductive layer and thus "exposed". Furthermore, in this

Context conceivable that in addition to the exposed

Space in places as well

Radiation exit surfaces of the semiconductor chips are free from the electrically insulating layer.

According to at least one embodiment of the optoelectronic module is between the semiconductor chips a

Insulation layer arranged. For example, the fills

Isolation layer the spaces between the

Semiconductor chips at least in places form-fitting. Furthermore, it is conceivable that the insulating layer and the electrically insulating layer are formed with the same material.

In accordance with at least one embodiment of the optoelectronic module, the electrically insulating layer is a foil. The electrically insulating layer then preferably has a layer thickness of 10 to 300 μm, preferably of 150 μm. It is also possible that the electrically insulating layer consists of a plurality of individual films, which can be arranged one above the other, for example glued on, and thus form a stape-shaped film composite. In this context, it is conceivable that the films are hybrid films or even multilayer films. For example, "hybrid films" refers to a film formed with a ceramic material in a polymer matrix. "Multilayer films" are, for example, ceramic films with an adhesive coating.

In accordance with at least one embodiment of the optoelectronic module, the electrically insulating layer is applied by means of a laminating process. If the electrically insulating layer is a film, it can be laminated to exposed outer surfaces, for example the semiconductor chips and the mounting surface of the carrier, by means of the laminating process.

In accordance with at least one embodiment of the optoelectronic module, the electrically insulating layer is applied by means of a sintering process. For example, the applied material of the electrically insulating layer by means of high-energy laser light or by means of

formed by thermal sintering. For this purpose, the material of the electrically insulating layer is present for example in the form of a nanopowder or a composite.

In accordance with at least one embodiment, the electrically insulating layer is applied by means of a molding process. For example, before applying the material to the electrically insulating layer a stamp on the

Contact points / surfaces applied covering the contact points / surfaces. In a further step, the material of the electrically insulating layer can then be sprayed on. After curing, the punches can then be removed, whereby the recesses in the electric

insulating layer are exposed. Preferably then the material of the electrically insulating layer is in the form of a dispersion or an aerosol.

The features according to which the electrically insulating layer is applied via a lamination process, a sintering process or a mold process are each objective features, since the application method can be detected directly on the optoelectronic module.

It is also conceivable that the electrically insulating layer is sprayed on. For this purpose, the material of the electrically insulating layer is present, for example, in volatile solution or in a polymer matrix.

Furthermore, the material of the electrically insulating layer can be applied by means of selective deposition, for example by means of a plasma process, a plasma spray process or by sputtering.

It is also conceivable that the electrically insulating layer is applied by means of a stencil printing process. For this purpose, a prefabricated template is placed on the carrier and the semiconductor chips, which has, for example, in the region of the contact points / surfaces covers. By means of such a template grid remain after the

Imprinting the material areas of the material of the electric insulating layer free, which then form the recesses of the electrically insulating layer.

In the following, the optoelectronic module described here will be explained in more detail on the basis of exemplary embodiments and the associated figures.

Figures 1 and 2 show schematic views of

Embodiments of an optoelectronic module described here.

FIGS. 3a to 3d show individual production steps for

Production of an embodiment of an optoelectronic module described here.

In the exemplary embodiments and the figures, identical or identically acting components are each provided with the same reference numerals. The illustrated elements are not to be regarded as true to scale, but rather individual

Elements exaggerated for better understanding

be shown.

1 shows a schematic side view of an embodiment of a described here

Optoelectronic module 100. A carrier 1 has a

Contact point 1A on. On a mounting surface 11, a radiation-emitting semiconductor chip 2 is applied, which has an active zone for generating electromagnetic

Having radiation. Furthermore, the radiation-emitting semiconductor chip 2 has a first contact surface 2A and a second contact surface 2B. The radiation-emitting

Semiconductor chip 2 is applied with its second contact surface 2A on the mounting surface 11 of the carrier 1 and there with the carrier 1 electrically contacted. By way of example, the radiation-emitting semiconductor chip 2 is adhesively bonded or connected to the carrier 1 by means of a solder material. On exposed side surfaces 9 of the semiconductor chip 2 and a radiation exit surface 3 of the semiconductor chip 2 is

in places an electrically insulating layer 4

positively applied. Furthermore, the electrically insulating layer 4 covers the mounting surface 11 of the carrier 1 in the region 21, so that the electrically insulating layer 4 extends without interruption between the contact point 1A and the first contact surface 2A. The electrically insulating

Layer 4 has a first recess 4A, which is continuous between the radiation exit surface 3 along the

Side surface 9 extends to the support 1 out. The first

Recess 4A is therefore of the carrier 1 and the first

Contact surface 2A bounded laterally. The

Radiation exit surface 3 of the radiation-emitting

Semiconductor chips 2 is then partially free of the

electrically insulating layer 4. An electrically conductive conductive structure 8 contacts the first contact surface 2A with the contact point 1A of the carrier 1 electrically. In the present case, the electrically conductive conductive structure 8 is printed on the electrically insulating layer 4 and the two contact surfaces 1A and 2A. In the present case, the electrically insulating layer 4 is a film which by means of a

Laminating process is applied. In the embodiment according to FIG. 1, the electrically insulating layer 4 consists of a ceramic material. It is also conceivable that the electrically insulating layer 4 of a ceramic

Phosphor consists and the electrically insulating layer 4 at least partially from the radiation-emitting

Semiconductor chip 2 primarily emitted electromagnetic Radiation converts radiation of different wavelength, so that the optoelectronic module 100 emits mixed light.

FIG. 2 shows the optoelectronic module 100 with two radiation emitters arranged next to one another

Semiconductor chips 2. The semiconductor chips 2 form between them an intermediate space 12, which is delimited laterally in each case by the side surfaces 9 and by the carrier 1. In the intermediate space 12, an insulating layer 5 is arranged, which at least partially fills the gap 12 and is positively applied to the side surfaces 9 and the carrier 1. It is also conceivable that instead of or in addition to the insulating layer 5, the electrically insulating layer 4 is introduced into the intermediate space 12. The first recess 4A runs without interruption between the two semiconductor chips 2 and is through the contact surfaces 2A

laterally limited. As a result, the

Radiation exit surfaces 3 of the semiconductor chips exposed at least in places.

FIGS. 3a to 3d show individual production steps for producing an exemplary embodiment of one here

For this purpose, first of all, as shown in FIG. 3 a, the carrier 1 is provided, the semiconductor chips 2 being applied to the mounting surface 11 of the carrier 1.

In a further step, as in FIG. 3b

shown, the contact surfaces 1A of the carrier 1 and the

Contact surfaces 2A of the semiconductor chips 2 covered with a paint 50. Alternatively, the contact surfaces can be covered with films, a wax or other adhesive layers. According to the figure 3c is in a further step

Exposed outer surfaces of the optoelectronic module 100, the material of the electrically insulating layer 4th

applied, so that the side surfaces 9 and the

Radiation exit surfaces 3 are covered at least in places with the electrically insulating layer 4. The

Application can be done for example by means of a sintering or molding process. It is also conceivable that the

electrically insulating layer 4 by means of a

Laminierprozesses or a spray process is applied.

Furthermore, the material of the electrically insulating layer 4 can be applied by means of selective deposition, for example by means of a plasma process, a plasma spray process or by sputtering.

In a further step, the paint 50 is removed in the figure 3d by means of a physical and / or mechanical material removal, so that at least the contact surfaces 1A and 2A are exposed.

The radiation exit surfaces 3 are then completely covered with the material of the electrically insulating layer 4 up to the points where the contact surfaces 2A extend, wherein in the present case the electrically insulating layer 4 is formed with a radiation-transmissive ceramic or consists of a ceramic phosphor.

In a final step, the Ankontaktierung the

Semiconductor chips 2 via the electrically conductive

Lead structures 8 take place at locations of the contact points 1A and 2A. Alternatively, the application of the electrically insulating layer 4 can take place by means of the use of a pre-structured mask. For example, the electric

insulating layer 4 are then applied by a spraying process, for example by means of plasma deposition.

The invention is not limited by the description with reference to the embodiments. Rather, the includes

Invention every new feature as well as every combination of

Features, which includes in particular any combination of features in the claims, even if this feature or this combination itself is not explicitly in the

Claims or the embodiments is given.

Claims

claims

An optoelectronic module (100) comprising

- A support (1) with at least one contact point (1A); a radiation-emitting semiconductor chip (2), wherein the radiation-emitting semiconductor chip (2) has a first

Contact surface (2A) and a second contact surface (2B);

an electrically insulating layer (4) having a first (4A) and a second recess (4B);

- At least one electrically conductive guide structure (8), wherein

the first contact surface (2A) is arranged on the side of the radiation-emitting semiconductor chip (2) which is remote from the support (1),

- The electrically insulating layer (4) at least

in places on the carrier (1) and the semiconductor chip (2) and has the first recess (4A) in the region of the first contact surface (2A) and the second recess (4B) in the region of the contact point (1A),

- The electrically conductive guide structure (8) on the

electrically insulating layer (4) is arranged and the first contact surface (2A) with the contact point (1A) of the

Carrier (1) electrically contacted, and

- The electrically insulating layer (4) is formed predominantly with a ceramic material.

2. Optoelectronic module (100) according to the preceding claim,

with at least two radiation-emitting semiconductor chips (2), wherein the electrically insulating layer (4)

in places between the radiation-emitting

Semiconductor chips (2) is arranged.

3. Optoelectronic module (100) according to one of the preceding claims,

in which the electrically insulating layer (4) except for the recesses (4A, 4B) is positively applied to the exposed outer surfaces of the optoelectronic module (100).

4. Optoelectronic module (100) according to one of

previous claims,

in which the electrically insulating layer (4)

is radiation-permeable and a radiation exit surface (3) of the semiconductor chip (2) covered in places.

5. Optoelectronic module (100) according to one of

previous claims,

in which the electrically insulating layer (4) consists of a ceramic phosphor.

6. Optoelectronic module (100) according to one of

previous claims,

wherein the first recess (4A) in the electric

insulating layer (4) throughout between the

Radiation exit surface (3) of the semiconductor chip (2) and the carrier (1) along side surfaces (9) of the semiconductor chip (2) and laterally limited by the first contact surfaces (2A) and the carrier (1).

7. Optoelectronic module (100) according to one of

previous claims,

in which the first recess (4A) in the electrically insulating layer (4) runs continuously between adjacent semiconductor chips (2) and is bounded laterally by the contact surfaces (2A).

8. Optoelectronic module (100) according to one of

previous claims,

in which between the semiconductor chips (2) a

Insulation layer (5) is arranged.

9. Optoelectronic module (100) according to one of

previous claims,

in which the electrically insulating layer (4) is a foil.

10. Optoelectronic module (100) according to the preceding claim,

in which the electrically insulating layer (4) is applied by means of a lamination process.

11. Optoelectronic module (100) according to one of claims 1 to 8,

in which the electrically insulating layer (4) is applied by means of a sintering process.

12. Optoelectronic module (100) according to one of claims 1 to 8,

in which the electrical insulating layer (4) is applied by means of a molding process.